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Relativistic EELS scattering cross-sections for microanalysis based on Dirac solutions
Authors:
Zezhong Zhang,
Ivan Lobato,
Hamish Brown,
Dirk Lamoen,
Daen Jannis,
Johan Verbeeck,
Sandra Van Aert,
Peter D. Nellist
Abstract:
The rich information of electron energy-loss spectroscopy (EELS) comes from the complex inelastic scattering process whereby fast electrons transfer energy and momentum to atoms, exciting bound electrons from their ground states to higher unoccupied states. To quantify EELS, the common practice is to compare the cross-sections integrated within an energy window or fit the observed spectrum with th…
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The rich information of electron energy-loss spectroscopy (EELS) comes from the complex inelastic scattering process whereby fast electrons transfer energy and momentum to atoms, exciting bound electrons from their ground states to higher unoccupied states. To quantify EELS, the common practice is to compare the cross-sections integrated within an energy window or fit the observed spectrum with theoretical differential cross-sections calculated from a generalized oscillator strength (GOS) database with experimental parameters. The previous Hartree-Fock-based and DFT-based GOS are calculated from Schrödinger's solution of atomic orbitals, which does not include the full relativistic effects. Here, we attempt to go beyond the limitations of the Schrödinger solution in the GOS tabulation by including the full relativistic effects using the Dirac equation within the local density approximation, which is particularly important for core-shell electrons of heavy elements with strong spin-orbit coupling. This has been done for all elements in the periodic table (up to Z = 118) for all possible excitation edges using modern computing capabilities and parallelization algorithms. The relativistic effects of fast incoming electrons were included to calculate cross-sections that are specific to the acceleration voltage. We make these tabulated GOS available under an open-source license to the benefit of both academic users as well as allowing integration into commercial solutions.
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Submitted 16 May, 2024;
originally announced May 2024.
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Imaging the suppression of ferromagnetism in LaMnO$_3$ by metallic overlayers
Authors:
Bart Folkers,
Thies Jansen,
Thijs J. Roskamp,
Pim Reith,
André Timmermans,
Daen Jannis,
Nicolas Gauquelin,
Johan Verbeeck,
Hans Hilgenkamp,
Carlos M. M. Rosário
Abstract:
LaMnO$_3$ (LMO) thin films epitaxially grown on SrTiO$_3$ (STO) usually exhibit ferromagnetism above a critical layer thickness. We report the use of scanning SQUID microscopy (SSM) to study the suppression of the ferromagnetism in STO/LMO/metal structures. By partially covering the LMO surface with a metallic layer, both covered and uncovered LMO regions can be studied simultaneously. While Au do…
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LaMnO$_3$ (LMO) thin films epitaxially grown on SrTiO$_3$ (STO) usually exhibit ferromagnetism above a critical layer thickness. We report the use of scanning SQUID microscopy (SSM) to study the suppression of the ferromagnetism in STO/LMO/metal structures. By partially covering the LMO surface with a metallic layer, both covered and uncovered LMO regions can be studied simultaneously. While Au does not significantly influence the ferromagnetic order of the underlying LMO film, a thin Ti layer induces a strong suppression of the ferromagnetism, over tens of nanometers, which increases with time on a timescale of days. Detailed EELS analysis of the Ti-LaMnO$_3$ interface reveals \textcolor{black}{the presence of Mn$^{2+}$ and} an evolution of the Ti valence state from Ti$^0$ to Ti$^{4+}$ over approximately 5 nanometers. Furthermore, we demonstrate that by patterning Ti/Au overlayers, we can locally suppress the ferromagnetism and define ferromagnetic structures down to sub-micrometer scales.
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Submitted 21 May, 2024; v1 submitted 9 October, 2023;
originally announced October 2023.
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Convexity constraints on linear background models for electron energy-loss spectra
Authors:
Wouter Van den Broek,
Daen Jannis,
Jo Verbeeck
Abstract:
In this paper convexity constraints are derived for a background model of electron energy loss spectra (EELS) that is linear in the fitting parameters. The model outperforms a power-law both on experimental and simulated backgrounds, especially for wide energy ranges, and thus improves elemental quantification results. Owing to the model's linearity, the constraints can be imposed through fitting…
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In this paper convexity constraints are derived for a background model of electron energy loss spectra (EELS) that is linear in the fitting parameters. The model outperforms a power-law both on experimental and simulated backgrounds, especially for wide energy ranges, and thus improves elemental quantification results. Owing to the model's linearity, the constraints can be imposed through fitting by quadratic programming. This has important advantages over conventional nonlinear power-law fitting such as high speed and a guaranteed unique solution without need for initial parameters. As such, the need for user input is significantly reduced, which is essential for unsupervised treatment of large data sets. This is demonstrated on a demanding spectrum image of a semiconductor device sample with a high number of elements over a wide energy range.
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Submitted 30 August, 2023; v1 submitted 29 August, 2023;
originally announced August 2023.
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Pattern Formation by Electric-field Quench in Mott Crystal
Authors:
Nicolas Gauquelin,
Filomena Forte,
Daen Jannis,
Rosalba Fittipaldi,
Carmine Autieri,
Giuseppe Cuono,
Veronica Granata,
Mariateresa Lettieri,
Canio Noce,
Fabio Miletto Granozio,
Antonio Vecchione,
Johan Verbeeck,
Mario Cuoco
Abstract:
The control of Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca$_2$RuO$_4$ Mott insulator. We demonstrate how an applied electric field spatially reconstructs the ins…
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The control of Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca$_2$RuO$_4$ Mott insulator. We demonstrate how an applied electric field spatially reconstructs the insulating phase that, uniquely after switching off the electric field, exhibits nanoscale stripe domains. The stripe pattern has regions with inequivalent octahedral distortions that we directly observe through high-resolution scanning transmission electron microscopy. The nanotexture depends on the orientation of the electric field, it is non-volatile and rewritable. We theoretically simulate the charge and orbital reconstruction induced by a quench dynamics of the applied electric field providing clear-cut mechanisms for the stripe phase formation. Our results open the path for the design of non-volatile electronics based on voltage-controlled nanometric phases.
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Submitted 31 May, 2023;
originally announced May 2023.
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High-strain-induced local modification of the electronic properties of VO$_2$ thin films
Authors:
Yorick A. Birkhölzer,
Kai Sotthewes,
Nicolas Gauquelin,
Lars Riekehr,
Daen Jannis,
Emma van der Minne,
Yibin Bu,
Johan Verbeeck,
Harold J. W. Zandvliet,
Gertjan Koster,
Guus Rijnders
Abstract:
Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long and short range elastic distortions, as well as the symmetry change, and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the…
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Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long and short range elastic distortions, as well as the symmetry change, and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue towards mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surfacelayer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.
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Submitted 13 October, 2022;
originally announced October 2022.
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Overcoming contrast reversals in focused probe ptychography of thick materials: an optimal pipeline for efficiently determining local atomic structure in materials science
Authors:
C. Gao,
C. Hofer,
D. Jannis,
A. Béché,
J. Verbeeck,
T. J. Pennycook
Abstract:
Ptychography provides highly efficient imaging in scanning transmission electron microscopy (STEM), but questions have remained over its applicability to strongly scattering samples such as those most commonly seen in materialsscience. Although contrast reversals can appear in ptychographic phase images as the projected potentials of the sample increase, we show here how these can be easily overco…
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Ptychography provides highly efficient imaging in scanning transmission electron microscopy (STEM), but questions have remained over its applicability to strongly scattering samples such as those most commonly seen in materialsscience. Although contrast reversals can appear in ptychographic phase images as the projected potentials of the sample increase, we show here how these can be easily overcome by a small amount of defocus. The amount of defocus is small enough that it can exist naturally when focusing using the annular dark field (ADF) signal, but can also be adjusted post acquisition. The ptychographic images of strongly scattering materials are clearer at finite doses than other STEM techniques, and can better reveal light atomic columns within heavy lattices. In addition data for ptychography can now be collected simultaneously with the fastest of ADF scans. This combination of sensitivity and interpretability presents an ideal workflow for materials science.
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Submitted 4 August, 2022; v1 submitted 26 May, 2022;
originally announced May 2022.
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Real Time Integration Centre of Mass (riCOM) Reconstruction for 4D-STEM
Authors:
Chu-** Yu,
Thomas Friedrich,
Daen Jannis,
Sandra Van Aert,
Johan Verbeeck
Abstract:
A real-time image reconstruction method for scanning transmission electron microscopy (STEM) is proposed. With an algorithm requiring only the center of mass (COM) of the diffraction pattern at one probe position at a time, it is able to update the resulting image each time a new probe position is visited without storing any intermediate diffraction patterns. The results show clear features at hig…
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A real-time image reconstruction method for scanning transmission electron microscopy (STEM) is proposed. With an algorithm requiring only the center of mass (COM) of the diffraction pattern at one probe position at a time, it is able to update the resulting image each time a new probe position is visited without storing any intermediate diffraction patterns. The results show clear features at higher spatial frequency, such as atomic column positions. It is also demonstrated that some common post processing methods, such as band pass filtering, can be directly integrated in the real time processing flow. Compared with other reconstruction methods, the proposed method produces high quality reconstructions with good noise robustness at extremely low memory and computational requirements. An efficient, interactive open source implementation of the concept is further presented, which is compatible with frame-based, as well as event-based camera/file types. This method provides the attractive feature of immediate feedback that microscope operators have become used to, e.g. conventional high angle annular dark field STEM imaging, allowing for rapid decision making and fine tuning to obtain the best possible images for beam sensitive samples at the lowest possible dose.
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Submitted 14 December, 2021; v1 submitted 8 December, 2021;
originally announced December 2021.
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On the resistance minimum in LaAlO$_3$/Eu$_{1-x}$La$_x$TiO$_3$/SrTiO$_3$ heterostructures
Authors:
N. Lebedev,
Y. Huang,
A. Rana,
D. Jannis,
N. Gauquelin,
J. Verbeeck,
J. Aarts
Abstract:
In this paper we study LaAlO$_3$/Eu$_{1-x}$La$_x$TiO$_3$/SrTiO$_3$ structures with nominally x = 0, 0.1 and different thicknesses of the Eu$_{1-x}$La$_x$TiO$_3$ layer. We observe that both systems have many properties similar to previously studied LaAlO$_3$/EuTiO$_3$/SrTiO$_3$ and other oxide interfaces, such as the formation of a 2D electron liquid for 1 or 2 unit cells of Eu$_{1-x}$La$_x$TiO…
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In this paper we study LaAlO$_3$/Eu$_{1-x}$La$_x$TiO$_3$/SrTiO$_3$ structures with nominally x = 0, 0.1 and different thicknesses of the Eu$_{1-x}$La$_x$TiO$_3$ layer. We observe that both systems have many properties similar to previously studied LaAlO$_3$/EuTiO$_3$/SrTiO$_3$ and other oxide interfaces, such as the formation of a 2D electron liquid for 1 or 2 unit cells of Eu$_{1-x}$La$_x$TiO$_3$; a metal-insulator transition driven by the thickness increase of Eu$_{1-x}$La$_x$TiO$_3$ layer; the presence of an Anomalous Hall effect (AHE) when driving the systems above the Lifshitz point with a backgate voltage; and a minimum in the temperature dependence of the sheet resistance below the Lifshitz point in the one-band regime, which becomes more pronounced with increasing gate voltage. However, and notwithstanding the likely presence of magnetism in the system, we do not attribute that minimum to the Kondo effect, but rather to the properties of SrTiO$_3$ crystal and the inevitable effects of charge trap** when using back gates.
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Submitted 1 September, 2021;
originally announced September 2021.
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Coupling charge and topological reconstructions at polar oxide interfaces
Authors:
T. C. van Thiel,
W. Brzezicki,
C. Autieri,
J. R. Hortensius,
D. Afanasiev,
N. Gauquelin,
D. Jannis,
N. Janssen,
D. J. Groenendijk,
J. Fatermans,
S. van Aert,
J. Verbeeck,
M. Cuoco,
A. D. Caviglia
Abstract:
In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventiona…
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In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wavefunctions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO$_3$, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and LaAlO$_3$, a polar wide-bandgap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO$_2$/SrO interface configuration, leading to excess charge being pinned near the LaAlO$_3$/SrRuO$_3$ interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction modifies the momentum-space Berry curvature in SrRuO$_3$, driving a reorganization of the topological charges in the band structure. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces.
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Submitted 7 July, 2021;
originally announced July 2021.
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Event driven 4D STEM acquisition with a Timepix3 detector: microsecond dwell time and faster scans for high precision and low dose applications
Authors:
Daen Jannis,
Christoph Hofer,
Chuang Gao,
Xiaobin Xie,
Armand Béché,
Timothy J. Pennycook,
Jo Verbeeck
Abstract:
Four dimensional scanning transmission electron microscopy (4D STEM) records the scattering of electrons in a material in great detail. The benefits offered by 4D STEM are substantial, with the wealth of data it provides facilitating for instance high precision, high electron dose efficiency phase imaging via center of mass or ptychography based analysis. However the requirement for a 2D image of…
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Four dimensional scanning transmission electron microscopy (4D STEM) records the scattering of electrons in a material in great detail. The benefits offered by 4D STEM are substantial, with the wealth of data it provides facilitating for instance high precision, high electron dose efficiency phase imaging via center of mass or ptychography based analysis. However the requirement for a 2D image of the scattering to be recorded at each probe position has long placed a severe bottleneck on the speed at which 4D STEM can be performed. Recent advances in camera technology have greatly reduced this bottleneck, with the detection efficiency of direct electron detectors being especially well suited to the technique. However even the fastest frame driven pixelated detectors still significantly limit the scan speed which can be used in 4D STEM, making the resulting data susceptible to drift and hampering its use for low dose beam sensitive applications. Here we report the development of the use of an event driven Timepix3 direct electron camera that allows us to overcome this bottleneck and achieve 4D STEM dwell times down to 100~ns; orders of magnitude faster than what has been possible with frame based readout. We characterise the detector for different acceleration voltages and show that the method is especially well suited for low dose imaging and promises rich datasets without compromising dwell time when compared to conventional STEM imaging.
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Submitted 8 December, 2021; v1 submitted 6 July, 2021;
originally announced July 2021.
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Reducing electron beam damage through alternative STEM scanning strategies. Part I -- Experimental findings
Authors:
Abner Velazco,
Daen Jannis,
Armand Béché,
Johan Verbeeck
Abstract:
The highly energetic electrons in a transmission electron microscope (TEM) can alter or even completely destroy the structure of samples before sufficient information can be obtained. This is especially problematic in the case of zeolites, organic and biological materials. As this effect depends on both the electron beam and the sample and can involve multiple damage pathways, its study remained d…
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The highly energetic electrons in a transmission electron microscope (TEM) can alter or even completely destroy the structure of samples before sufficient information can be obtained. This is especially problematic in the case of zeolites, organic and biological materials. As this effect depends on both the electron beam and the sample and can involve multiple damage pathways, its study remained difficult and is plagued with irreproducibity issues, circumstantial evidence, rumours, and a general lack of solid data. Here we take on the experimental challenge to investigate the role of the STEM scan pattern on the damage behaviour of a commercially available zeolite sample with the clear aim to make our observations as reproducible as possible. We make use of a freely programmable scan engine that gives full control over the tempospatial distribution of the electron probe on the sample and we use its flexibility to obtain mutliple repeated experiments under identical conditions comparing the difference in beam damage between a conventional raster scan pattern and a newly proposed interleaved scan pattern that provides exactly the same dose and dose rate and visits exactly the same scan points. We observe a significant difference in beam damage for both patterns with up to 11 % reduction in damage (measured from mass loss). These observations demonstrate without doubt that electron dose, dose rate and acceleration voltage are not the only parameters affecting beam damage in (S)TEM experiments and invite the community to rethink beam damage as an unavoidable consequence of applied electron dose.
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Submitted 30 April, 2021;
originally announced May 2021.
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Reducing electron beam damage through alternative STEM scanning strategies. Part II -- Attempt towards an empirical model describing the damage process
Authors:
D. Jannis,
A. Velazco,
A. Béché,
J. Verbeeck
Abstract:
In this second part of a series we attempt to construct an empirical model that can mimick all experimental observations made regarding the role of an alternative interleaved scan pattern in STEM imaging on the beam damage in a specific zeolite sample. We make use of a 2D diffusion model that describes the dissipation of the deposited beam energy in the sequence of probe positions that are visited…
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In this second part of a series we attempt to construct an empirical model that can mimick all experimental observations made regarding the role of an alternative interleaved scan pattern in STEM imaging on the beam damage in a specific zeolite sample. We make use of a 2D diffusion model that describes the dissipation of the deposited beam energy in the sequence of probe positions that are visited during the scan pattern. The diffusion process allows for the concept of trying to outrun the beam damage by carefully tuning the dwell time and distance between consecutively visited probe positions. We add a non linear function to include a threshold effect and evaluate the accumulated damage in each part of the image as a function of scan pattern details. Together, these ingredients are able to describe qualitatively all aspects of the experimental data and provide us with a model that could guide a further optimisation towards even lower beam damage without lowering the applied electron dose. We deliberately remain vague on what is diffusing here which avoids introducing too many sample specific details. This provides hope that the model can be applied also in sample classes that were not yet studied in such great detail by adjusting higher level parameters: a sample dependent diffusion constant and damage threshold.
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Submitted 30 April, 2021;
originally announced April 2021.
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Optical versus electron diffraction imaging of Twist-angle in 2D transition metal dichalcogenide bilayer superlattices
Authors:
S. Psilodimitrakopoulos,
A. Orekhov,
L. Mouchliadis,
D. Jannis,
G. M. Maragkakis,
G. Kourmoulakis,
N. Gauquelin,
G. Kioseoglou,
J. Verbeeck,
E. Stratakis
Abstract:
Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between the two monolayers, coined as twist-angle, modifies the crystal symmetry and creates a superlattice with exciting properties. Here, we demonstrate an all-optical…
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Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between the two monolayers, coined as twist-angle, modifies the crystal symmetry and creates a superlattice with exciting properties. Here, we demonstrate an all-optical method for pixel-by-pixel map** of the twist-angle with resolution of 0.23 degrees, via polarization-resolved second harmonic generation (P-SHG) microscopy and we compare it with four-dimensional scanning transmission electron microscopy (4D-STEM). It is found that the twist-angle imaging of WS2 bilayers, using the P-SHG technique is in excellent agreement with that obtained using electron diffraction. The main advantages of the optical approach are that the characterization is performed on the same substrate that the device is created on and that it is three orders of magnitude faster than the 4D-STEM. We envisage that the optical P-SHG imaging could become the gold standard for the quality examination of TMD superlattice-based devices.
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Submitted 12 April, 2021;
originally announced April 2021.
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Wide field of view crystal orientation map** of layered materials
Authors:
A. Orekhov,
D. Jannis,
N. Gauquelin,
G. Guzzinati,
A. Nalin Mehta,
S. Psilodimitrakopoulos,
L. Mouchliadis,
P. K. Sahoo,
I. Paradisanos,
A. C. Ferrari,
G. Kioseoglou,
E. Stratakis,
J. Verbeeck
Abstract:
Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropic deformations, etc. are detrimental for most (opto)electronic applications. Here, we present a set-up able to transform a conventional scanning elect…
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Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropic deformations, etc. are detrimental for most (opto)electronic applications. Here, we present a set-up able to transform a conventional scanning electron microscope into a tool for structural analysis of a wide range of LMs. An hybrid pixel electron detector below the sample makes it possible to record two dimensional (2d) diffraction patterns for every probe position on the sample surface (2d), in transmission mode, thus performing a 2d+2d=4d STEM (scanning transmission electron microscopy) analysis. This offers a field of view up to 2 mm2, while providing spatial resolution in the nm range, enabling the collection of statistical data on grain size, relative orientation angle, bilayer stacking, strain, etc. which can be mined through automated open-source data analysis software. We demonstrate this approach by analyzing a variety of LMs, such as mono- and multi-layer graphene, graphene oxide and MoS2, showing the ability of this method to characterize them in the tens of nm to mm scale. This wide field of view range and the resulting statistical information are key for large scale applications of LMs.
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Submitted 3 November, 2020;
originally announced November 2020.
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HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale
Authors:
Viveksharma Prabhakara,
Daen Jannis,
Giulio Guzzinati,
Armand Béché,
Hugo Bender,
Johan Verbeeck
Abstract:
Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors. High resolution scanning transmission electron microscopy (HR-STEM) imaging is an excellent tool that provides spatial resolution at the atomic scale and strain information by applying Geometric Phase Analysis or image f…
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Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors. High resolution scanning transmission electron microscopy (HR-STEM) imaging is an excellent tool that provides spatial resolution at the atomic scale and strain information by applying Geometric Phase Analysis or image fitting procedures. However, HR-STEM images regularly suffer from scanning distortions and sample drift during image acquisition. In this paper, we propose a new scanning strategy that drastically reduces artefacts due to drift and scanning distortion, along with extending the field of view. The method allows flexible tuning of the spatial resolution and decouples the choice of field of view from the need for local atomic resolution. It consists of the acquisition of a series of independent small subimages containing an atomic resolution image of the local lattice. All subimages are then analysed individually for strain by fitting a nonlinear model to the lattice images. The obtained experimental strain maps are quantitatively benchmarked against the Bessel diffraction technique. We demonstrate that the proposed scanning strategy approaches the performance of the diffraction technique while having the advantage that it does not require specialized diffraction cameras.
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Submitted 5 March, 2021; v1 submitted 27 May, 2020;
originally announced May 2020.
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Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique
Authors:
Viveksharma Prabhakara,
Daen Jannis,
Armand Béché,
Hugo Bender,
Johan Verbeeck
Abstract:
Moiré fringes are used throughout a wide variety of applications in physics and engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in Scanning Transmission Electron Microscopy imaging to provide local strain measurement in crystals by comparing the crystal lattice with the scanning raster that then s…
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Moiré fringes are used throughout a wide variety of applications in physics and engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in Scanning Transmission Electron Microscopy imaging to provide local strain measurement in crystals by comparing the crystal lattice with the scanning raster that then serves as the reference. The images obtained in this way contain a beating fringe pattern with a local period that represents the deviation of the lattice from the reference. In order to obtain the actual strain value, a region containing a full period of the fringe is required, which results in a compromise between strain sensitivity and spatial resolution. In this paper we propose an advanced setup making use of an optimised scanning pattern and a novel phase step** demodulation scheme. We demonstrate the novel method on a series of 16 nm Si-Ge semiconductor FinFET devices in which strain plays a crucial role in modulating the charge carrier mobility. The obtained results are compared with both Nano-beam diffraction and the recently proposed Bessel beam diffraction technique. The setup provides a much improved spatial resolution over conventional moiré imaging in STEM while at the same time being fast and requiring no specialised diffraction camera as opposed to the diffraction techniques we compare to.
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Submitted 26 July, 2019;
originally announced July 2019.
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Spectroscopic coincidence experiments in transmission electron microscopy
Authors:
Daen Jannis,
Knut Müller-Caspary,
Armand Béché,
Andreas Oelsner,
Johan Verbeeck
Abstract:
We demonstrate the feasibility of coincidence measurements in a conventional transmission electron microscope, revealing the temporal correlation between electron energy loss spectroscopy (EELS) and energy dispersive X-ray (EDX) spectroscopy events. We make use of a delay line detector with picosecond time resolution attached to a modified EELS spectrometer. We demonstrate that coincidence between…
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We demonstrate the feasibility of coincidence measurements in a conventional transmission electron microscope, revealing the temporal correlation between electron energy loss spectroscopy (EELS) and energy dispersive X-ray (EDX) spectroscopy events. We make use of a delay line detector with picosecond time resolution attached to a modified EELS spectrometer. We demonstrate that coincidence between both events, related to the excitation and de-excitation of atoms in a crystal, provides added information not present in the individual EELS or EDX spectra. In particular, the method provides EELS with a significantly suppressed or even removed background, overcoming the many difficulties with conventional parametric background fitting as it uses no assumptions on the shape of the background, requires no user input and does not suffer from counting noise originating from the background signal. This is highly attractive, especially when low concentrations of elements need to be detected in a matrix of other elements.
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Submitted 13 February, 2019;
originally announced February 2019.
