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Antireflective photonic structure for coherent nonlinear spectroscopy of single magnetic quantum dots
Authors:
W. Pacuski,
J. -G. Rousset,
V. Delmonte,
T. Jakubczyk,
K. Sobczak,
J. Borysiuk,
K. Sawicki,
E. Janik,
J. Kasprzak
Abstract:
This work presents epitaxial growth and optical spectroscopy of CdTe quantum dots (QDs) in (Cd,Zn,Mg)Te barriers placed on the top of (Cd,Zn,Mg)Te distributed Bragg reflector. The formed photonic mode in our half-cavity structure permits to enhance the local excitation intensity and extraction efficiency of the QD photoluminescence, while suppressing the reflectance within the spectral range cover…
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This work presents epitaxial growth and optical spectroscopy of CdTe quantum dots (QDs) in (Cd,Zn,Mg)Te barriers placed on the top of (Cd,Zn,Mg)Te distributed Bragg reflector. The formed photonic mode in our half-cavity structure permits to enhance the local excitation intensity and extraction efficiency of the QD photoluminescence, while suppressing the reflectance within the spectral range covering the QD transitions. This allows to perform coherent, nonlinear, resonant spectroscopy of individual QDs. The coherence dynamics of a charged exciton is measured via four-wave mixing, with the estimated dephasing time $T_2=(210\,\pm\,40)$ ps. The same structure contains QDs doped with single Mn$^{2+}$ ions, as detected in photoluminescence spectra. Our work therefore paves the way toward investigating and controlling an exciton coherence coupled, via $s$,$p$-$d$ exchange interaction, with an individual spin of a magnetic dopant.
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Submitted 23 March, 2017;
originally announced March 2017.
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Influence of ZnTe based distributed Bragg reflectors on the yellow range luminescence of self assembled CdTe QDs
Authors:
Jean-Guy Rousset,
Jakub Kobak,
Elżbieta Janik,
Magdalena Parlinska-Wojtan,
Tomasz Słupinski,
Jan Suffczyński,
Andrzej Golnik,
Piotr Kossacki,
Michał Nawrocki,
Wojciech Pacuski
Abstract:
The influence of a distributed Bragg reflector composed of ZnTe, MgTe, and MgSe superlattices on photoluminescence of self assembled CdTe quantum dots (QD) emitting in the yellow spectral range is investigated. In the case of QDs grown on a distributed Bragg reflector the photoluminescence intensity is enhanced by more than one order of magnitude, whereas the single QD lines are broadened as compa…
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The influence of a distributed Bragg reflector composed of ZnTe, MgTe, and MgSe superlattices on photoluminescence of self assembled CdTe quantum dots (QD) emitting in the yellow spectral range is investigated. In the case of QDs grown on a distributed Bragg reflector the photoluminescence intensity is enhanced by more than one order of magnitude, whereas the single QD lines are broadened as compared to the case of QDs grown on a ZnTe buffer. Structural and chemical analysis reveal an unintentional formation of a thin ZnSe layer induced by the growth interruption needed for the deposition of the QDs sheet. Sharp emission lines from individual quantum dots are recovered in the case of a thicker ZnTe layer grown prior to the QDs. This indicates that growth interruptions might be responsible for the QD emission line broadening.
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Submitted 3 November, 2014;
originally announced November 2014.
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MBE grown microcavities based on selenium and tellurium compounds
Authors:
J. -G. Rousset,
T. Jakubczyk,
J. Kobak,
R. Rudniewski,
P. Piotrowski,
M. Ściesiek,
E. Janik,
J. Borysiuk,
T. Slupinski,
A. Golnik,
P. Kossacki,
M. Nawrocki,
W. Pacuski
Abstract:
In this work, we present three groups of microcavities: based on selenium compounds only, based on tellurium compounds only, and structures based on mixed selenium and tellurium compounds. We focus on their possible applications in the field of optoelectronic devices and fundamental physics (VCSELs, narrow range light sources, studies of cavity-polariton electrodynamics) in a range of wavelength f…
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In this work, we present three groups of microcavities: based on selenium compounds only, based on tellurium compounds only, and structures based on mixed selenium and tellurium compounds. We focus on their possible applications in the field of optoelectronic devices and fundamental physics (VCSELs, narrow range light sources, studies of cavity-polariton electrodynamics) in a range of wavelength from 540 to 760 nm.
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Submitted 15 October, 2013;
originally announced October 2013.
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Designing quantum dots for solotronics
Authors:
J. Kobak,
T. Smoleński,
M. Goryca,
M. Papaj,
K. Gietka,
A. Bogucki,
M. Koperski,
J. -G. Rousset,
J. Suffczyński,
E. Janik,
M. Nawrocki,
A. Golnik,
P. Kossacki,
W. Pacuski
Abstract:
Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non…
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Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non-radiative recombination, regarded as a severe problem, limited development of quantum dots with magnetic ions. Our photoluminescence studies on, so far unexplored, individual CdTe dots with single cobalt ions and individual CdSe dots with single manganese ions show, however, that even if energetically allowed, the single ion related non-radiative recombination is negligible in such zero-dimensional structures. This opens solotronics for a wide range of even not yet considered systems. Basing on the results of our single spin relaxation experiments and on the material trends, we identify optimal magnetic ion-quantum dot systems for implementation of a single-ion based spin memory.
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Submitted 23 August, 2013;
originally announced August 2013.
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Ultra low density of CdTe quantum dots grown by MBE
Authors:
J. Kobak,
J. -G. Rousset,
R. Rudniewski,
E. Janik,
Słupiński,
P. Kossacki,
A. Golnik,
W. Pacuski
Abstract:
This work presents methods of controlling the density of self-assembled CdTe quantum dots (QDs) grown by molecular beam epitaxy. Two approaches are discussed: increasing the deposition temperature of CdTe and the reduction of CdTe layer thickness. Photoluminescence (PL) measurements at low temperature confirms that both methods can be used for significant reduction of QDs density from 10$^{10}$QD/…
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This work presents methods of controlling the density of self-assembled CdTe quantum dots (QDs) grown by molecular beam epitaxy. Two approaches are discussed: increasing the deposition temperature of CdTe and the reduction of CdTe layer thickness. Photoluminescence (PL) measurements at low temperature confirms that both methods can be used for significant reduction of QDs density from 10$^{10}$QD/cm$^2$ to 10$^7$-10$^8$QD/cm$^2$. For very low QDs density, identification of all QDs lines observed in the spectrum is possible.
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Submitted 18 October, 2016; v1 submitted 9 October, 2012;
originally announced October 2012.
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MBE growth and characterization of a II-VI distributed Bragg reflector and microcavity lattice-matched to MgTe
Authors:
J. -G. Rousset,
J. Kobak,
T. Slupinski,
T. Jakubczyk,
P. Stawicki,
E. Janik,
M. Tokarczyk,
G. Kowalski,
M. Nawrocki,
W. Pacuski
Abstract:
We present the realization and characterization of a 20 fold, fully lattice-matched epitaxial distributed Bragg reflector based on (Cd,Zn)Te and (Cd,Zn,Mg)Te layers. We also present a microcavity based on (Cd,Zn,Mg)Te containing a (Cd,Zn)Te quantum well. Reflectivity spectra, photoluminescence in real space and in far field are presented.
We present the realization and characterization of a 20 fold, fully lattice-matched epitaxial distributed Bragg reflector based on (Cd,Zn)Te and (Cd,Zn,Mg)Te layers. We also present a microcavity based on (Cd,Zn,Mg)Te containing a (Cd,Zn)Te quantum well. Reflectivity spectra, photoluminescence in real space and in far field are presented.
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Submitted 6 October, 2012;
originally announced October 2012.
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Map** of quantum well eigenstates with semimagnetic probes
Authors:
Ł. Kłopotowski,
A. Gruszczyńska,
E. Janik,
M. Wiater,
P. Kossacki,
G. Karczewski,
T. Wojtowicz
Abstract:
We present results of transmission measurements on CdTe quantum wells with thin semimagnetic CdMnTe probe layers embedded in various positions along the growth axis. The presence of the probes allow us to map the probability density functions by two independent methods: analyzing the exciton energy position and the exciton Zeeman splitting. We apply both approaches to map the first three quantum…
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We present results of transmission measurements on CdTe quantum wells with thin semimagnetic CdMnTe probe layers embedded in various positions along the growth axis. The presence of the probes allow us to map the probability density functions by two independent methods: analyzing the exciton energy position and the exciton Zeeman splitting. We apply both approaches to map the first three quantum well eigenstates and we find that both of them yield equally accurate results.
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Submitted 26 May, 2008;
originally announced May 2008.
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GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions
Authors:
J. Sadowski,
P. Dluzewski,
S. Kret,
E. Janik,
E. Lusakowska,
J. Kanski,
A. Presz,
F. Terki,
S. Charar,
D. Tang
Abstract:
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine…
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GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self assembled structures for nanospintronics.
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Submitted 3 October, 2007;
originally announced October 2007.
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Disorder suppression and precise conductance quantization in constrictions of PbTe quantum wells
Authors:
G. Grabecki,
J. Wrobel,
T. Dietl,
E. Janik,
M. Aleszkiewicz,
E. Papis,
E. Kaminska,
A. Piotrowska,
G. Springholz,
G. Bauer
Abstract:
Conductance quantization was measured in submicron constrictions of PbTe, patterned into narrow,12 nm wide quantum wells deposited between Pb$_{0.92}$Eu$_{0.08}$Te barriers. Because the quantum confinement imposed by the barriers is much stronger than the lateral one, the one-dimensional electron energy level structure is very similar to that usually met in constrictions of AlGaAs/GaAs heterostr…
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Conductance quantization was measured in submicron constrictions of PbTe, patterned into narrow,12 nm wide quantum wells deposited between Pb$_{0.92}$Eu$_{0.08}$Te barriers. Because the quantum confinement imposed by the barriers is much stronger than the lateral one, the one-dimensional electron energy level structure is very similar to that usually met in constrictions of AlGaAs/GaAs heterostructures. However, in contrast to any other system studied so far, we observe precise conductance quantization in $2e^2/h$ units, {\it despite of significant amount of charged defects in the vicinity of the constriction}. We show that such extraordinary results is a consequence of the paraelectric properties of PbTe, namely, the suppression of long-range tails of the Coulomb potentials due to the huge dielectric constant.
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Submitted 29 June, 2005;
originally announced June 2005.
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Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers
Authors:
J. Sadowski,
M. Adell,
J. Kanski,
L. Ilver,
E. Janik,
E. Lusakowska,
J. Z. Domagala,
R. Brucas,
M. Hanson
Abstract:
Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As cap**. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnA…
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Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As cap**. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnAs, are smooth and well-ordered (1x2), and are well suited for continued epitaxial growth.
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Submitted 4 April, 2005; v1 submitted 4 April, 2005;
originally announced April 2005.
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Solution of the odderon problem for arbitrary conformal weights
Authors:
J. Wosiek,
R. E. Janik
Abstract:
A new method is applied to solve the Baxter equation for three coupled, noncompact spins. Due to the equivalence with the system of three reggeized gluons, the intercept of the odderon trajectory is predicted for the first time, as the analytic function of the two relevant parameters.
A new method is applied to solve the Baxter equation for three coupled, noncompact spins. Due to the equivalence with the system of three reggeized gluons, the intercept of the odderon trajectory is predicted for the first time, as the analytic function of the two relevant parameters.
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Submitted 27 October, 1996;
originally announced October 1996.
