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Deep Learning Enabled Strain Map** of Single-Atom Defects in 2D Transition Metal Dichalcogenides with Sub-picometer Precision
Authors:
Chia-Hao Lee,
Abid Khan,
Di Luo,
Tatiane P. Santos,
Chuqiao Shi,
Blanka E. Janicek,
Sangmin Kang,
Wenjuan Zhu,
Nahil A. Sobh,
André Schleife,
Bryan K. Clark,
Pinshane Y. Huang
Abstract:
2D materials offer an ideal platform to study the strain fields induced by individual atomic defects, yet challenges associated with radiation damage have so-far limited electron microscopy methods to probe these atomic-scale strain fields. Here, we demonstrate an approach to probe single-atom defects with sub-picometer precision in a monolayer 2D transition metal dichalcogenide, WSe$_{2-2x}$Te…
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2D materials offer an ideal platform to study the strain fields induced by individual atomic defects, yet challenges associated with radiation damage have so-far limited electron microscopy methods to probe these atomic-scale strain fields. Here, we demonstrate an approach to probe single-atom defects with sub-picometer precision in a monolayer 2D transition metal dichalcogenide, WSe$_{2-2x}$Te$_{2x}$. We utilize deep learning to mine large datasets of aberration-corrected scanning transmission electron microscopy images to locate and classify point defects. By combining hundreds of images of nominally identical defects, we generate high signal-to-noise class-averages which allow us to measure 2D atomic coordinates with up to 0.3 pm precision. Our methods reveal that Se vacancies introduce complex, oscillating strain fields in the WSe$_{2-2x}$Te$_{2x}$ lattice which cannot be explained by continuum elastic theory. These results indicate the potential impact of computer vision for the development of high-precision electron microscopy methods for beam-sensitive materials.
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Submitted 22 January, 2020;
originally announced January 2020.
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Selective Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires
Authors:
S. T. Gill,
J. Damasco,
B. E. Janicek,
M. S. Durkin,
V. Humbert,
S. Gazibegovic,
D. Car,
E. P. A. M. Bakkers,
P. Y. Huang,
N. Mason
Abstract:
Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the supercon…
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Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting soft superconducting gap ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana based quantum computing applications, prepared using selective area epitaxy can achieve micron scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications.
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Submitted 11 September, 2018; v1 submitted 20 March, 2018;
originally announced March 2018.
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Engineering the structural and electronic phases of MoTe2 through W substitution
Authors:
D. Rhodes,
D. A. Chenet,
B. E. Janicek,
C. Nyby,
Y. Lin,
W. **,
D. Edelberg,
E. Mannebach,
N. Finney,
A. Antony,
T. Schiros,
T. Klarr,
A. Mazzoni,
M. Chin,
Y. -c Chiu,
W. Zheng,
Q. R. Zhang,
F. Ernst,
J. I. Dadap,
X. Tong,
J. Ma,
R. Lou,
S. Wang,
T. Qian,
H. Ding
, et al. (8 additional authors not shown)
Abstract:
MoTe$_2$ is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic $2H-$phase, the semimetallic $1T^{\prime}$ monoclinic phase, and the semimetallic orthorhombic $T_d$ structure. The $2H-$phase displays a band gap of $\sim 1$ eV making it appealing for flexible and transparent optoelectronics. The $T_d-$phase is predicted t…
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MoTe$_2$ is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic $2H-$phase, the semimetallic $1T^{\prime}$ monoclinic phase, and the semimetallic orthorhombic $T_d$ structure. The $2H-$phase displays a band gap of $\sim 1$ eV making it appealing for flexible and transparent optoelectronics. The $T_d-$phase is predicted to possess unique topological properties which might lead to topologically protected non-dissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical do**, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound, might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe$_2$ through W substitution by unveiling the phase-diagram of the Mo$_{1-x}$W$_x$Te$_2$ solid solution which displays a semiconducting to semimetallic transition as a function of $x$. We find that only $\sim 8$ \% of W stabilizes the $T_d-$phase at room temperature. Photoemission spectroscopy, indicates that this phase possesses a Fermi surface akin to that of WTe$_2$.
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Submitted 8 October, 2016;
originally announced October 2016.
