Showing 1–8 of 8 results for author: Jang, H W

Thermal conductivity of intercalation, conversion, and alloying lithium-ion battery electrode materials as function of their state of charge

Authors: Jungwoo Shin, Sanghyeon Kim, Hoonkee Park, Ho Won Jang, David G. Cahill, Paul V. Braun

Abstract: Upon insertion and extraction of lithium, materials important for electrochemical energy storage can undergo changes in thermal conductivity ($Λ$) and elastic modulus ($\it M$). These changes are attributed to evolution of the intrinsic thermal carrier lifetime and interatomic bonding strength associated with structural transitions of electrode materials with varying degrees of reversibility. Usin… ▽ More Upon insertion and extraction of lithium, materials important for electrochemical energy storage can undergo changes in thermal conductivity ($Λ$) and elastic modulus ($\it M$). These changes are attributed to evolution of the intrinsic thermal carrier lifetime and interatomic bonding strength associated with structural transitions of electrode materials with varying degrees of reversibility. Using in situ time-domain thermoreflectance (TDTR) and picosecond acoustics, we systemically study $Λ$ and $\it M$ of conversion, intercalation and alloying electrode materials during cycling. The intercalation V$_{2}$O$_{5}$ and TiO$_{2}$ exhibit non-monotonic reversible $Λ$ and $\it M$ switching up to a factor of 1.8 ($Λ$) and 1.5 ($\it M$) as a function of lithium content. The conversion Fe$_{2}$O$_{3}$ and NiO undergo irreversible decays in $Λ$ and $\it M$ upon the first lithiation. The alloying Sb shows the largest and partially reversible order of the magnitude switching in $Λ$ between the delithiated (18 W m$^{-1}$ K$^{-1}$) and lithiated states (<1 W m$^{-1}$ K$^{-1}$). The irreversible $Λ$ is attributed to structural degradation and pulverization resulting from substantial volume changes during cycling. These findings provide new understandings of the thermal and mechanical property evolution of electrode materials during cycling of importance for battery design, and also point to pathways for forming materials with thermally switchable properties. △ Less

Submitted 21 September, 2021; v1 submitted 30 June, 2021; originally announced June 2021.

Comments: Main article: 31 pages, 6 figures. SI: 23 pages, 12 figures

Journal ref: Curr. Opin. Solid State Mater. Sci. 26 (2022) 100980

Influence of gas ambient on charge writing at the LaAlO3/SrTiO3 heterointerface

Authors: Haeri Kim, Seon Young Moon, Shin-Ik Kim, Seung-Hyub Baek, Ho Won Jang, Dong-Wook Kim

Abstract: We investigated the influences charge writing on the surface work function and resistance of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments (air, O2, N2, and H2/N2). Charge writing decreased the surface work function and resistance of the LAO/STO sample quite a lot in air but slightly in O2.The interface carrier density was extracted from the measured sheet resistance and… ▽ More We investigated the influences charge writing on the surface work function and resistance of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments (air, O2, N2, and H2/N2). Charge writing decreased the surface work function and resistance of the LAO/STO sample quite a lot in air but slightly in O2.The interface carrier density was extracted from the measured sheet resistance and compared with that obtained from the proposed charge-writing mechanisms, such as carrier transfer via surface adsorbates and surface redox. Such quantitative analyses suggested that additional processes (e.g., electronic state modification and electrochemical surface reaction) were required to explain charge writing on the LAO/STO interface. △ Less

Submitted 22 February, 2014; originally announced February 2014.

Comments: 17 pages, 4 figures

Journal ref: ACS Applied Materials & Interfaces(web) (2014)

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Authors: C. W. Bark, D. A. Felker, Y. Wang, Y. Zhang, H. W. Jang, C. M. Folkman, J. W. Park, S. H. Baek, X. Q. Pan, E. Y. Tsymbal, M. S. Rzchowski, C. B. Eom

Abstract: Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by ep… ▽ More Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface. △ Less

Submitted 17 November, 2010; originally announced November 2010.

Strong vortex pinning in Co-doped BaFe2As2 single crystal thin films

Authors: C. Tarantini, S. Lee, Y. Zhang, J. Jiang, C. W. Bark, J. D. Weiss, A. Polyanskii, C. T. Nelson, H. W. Jang, C. M. Folkman, S. H. Baek, X. Q. Pan, A. Gurevich, E. E. Hellstrom, C. B. Eom, D. C. Larbalestier

Abstract: We report measurements of the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2As2 thin films grown on SrTiO3/(La,Sr)(Al,Ta)O3 with different SrTiO3 template thicknesses. The films show Jc comparable to Jc of single crystals and a maximum pinning force Fp(0.6Tc) > 5 GN/m3 at H/Hirr ~ 0.5 indicative of strong vortex pinning effective up to high fields. Due to the strong correl… ▽ More We report measurements of the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2As2 thin films grown on SrTiO3/(La,Sr)(Al,Ta)O3 with different SrTiO3 template thicknesses. The films show Jc comparable to Jc of single crystals and a maximum pinning force Fp(0.6Tc) > 5 GN/m3 at H/Hirr ~ 0.5 indicative of strong vortex pinning effective up to high fields. Due to the strong correlated c-axis pinning, Jc for field along the c-axis exceeds Jc for H//ab plane, inverting the expectation of the Hc2 anisotropy. HRTEM reveals that the strong vortex pinning is due to a high density of nanosize columnar defects. △ Less

Submitted 27 February, 2010; originally announced March 2010.

Comments: 10 pages, 6 figures

Journal ref: Appl. Phys. Lett. 96, 142510 (2010)

Nanoscale rectification at the LaAlO3/SrTiO3 interface

Authors: Daniela F. Bogorin, Chung Wung Bark, Ho Won Jang, Cheng Cen, Chad M. Folkman, Chang-Beom Eom, Jeremy Levy

Abstract: Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical… ▽ More Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures with engineered structural inversion asymmetry. Nanostructures produced in this manner may be useful for electro-optic applications or in spintronic devices. △ Less

Submitted 10 June, 2010; v1 submitted 18 December, 2009; originally announced December 2009.

Journal ref: Appl. Phys. Lett. 97, 013102 (2010)

Template engineering of Co-doped BaFe2As2 single-crystal thin films

Authors: S. Lee, J. Jiang, C. T. Nelson, C. W. Bark, J. D. Weiss, C. Tarantini, H. W. Jang, C. M. Folkman, S. H. Baek, A. Polyanskii, D. Abraimov, A. Yamamoto, Y. Zhang, X. Q. Pan, E. E. Hellstrom, D. C. Larbalestier, C. B. Eom

Abstract: Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties of ferropnictide thin films appear compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report novel template… ▽ More Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties of ferropnictide thin films appear compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report novel template engineering using single-crystal intermediate layers of (001) SrTiO3 and BaTiO3 grown on various perovskite substrates that enables genuine epitaxial films of Co-doped BaFe2As2 with high transition temperature (zero resistivity Tc of 21.5K), small transition widths (delta Tc = 1.3K), superior Jc of 4.5 MA/cm2 (4.2K, self field) and strong c-axis flux pinning. Implementing SrTiO3 or BaTiO3 templates to match the alkaline earth layer in the Ba-122 with the alkaline earth-oxygen layer in the templates opens new avenues for epitaxial growth of ferropnictides on multi-functional single crystal substrates. Beyond superconductors, it provides a framework for growing heteroepitaxial intermetallic compounds on various substrates by matching interfacial layers between templates and thin film overlayers. △ Less

Submitted 1 October, 2009; originally announced October 2009.

Journal ref: Nature Materials, 9, 397-402 (2010)

Weak-link behavior of grain boundaries in superconducting Ba(Fe1-xCox)2As2 bicrystals

Authors: S. Lee, J. Jiang, J. D. Weiss, C. M. Folkman, C. W. Bark, C. Tarantini, A. Xu, D. Abraimov, A. Polyanskii, C. T. Nelson, Y. Zhang, S. H. Baek, H. W. Jang, A. Yamamoto, F. Kametani, X. Q. Pan, E. E. Hellstrom, A. Gurevich, C. B. Eom, D. C. Larbalestier

Abstract: We show that despite the low anisotropy, strong vortex pinning and high irreversibility field Hirr close to the upper critical field Hc2 of Ba(Fe1-xCox)2As2, the critical current density Jgb across [001] tilt grain boundaries (GBs) of thin film Ba(Fe1-xCox)2As2 bicrystals is strongly depressed, similar to high-Tc cuprates. Our results suggest that weak-linked GBs are characteristic of both cupra… ▽ More We show that despite the low anisotropy, strong vortex pinning and high irreversibility field Hirr close to the upper critical field Hc2 of Ba(Fe1-xCox)2As2, the critical current density Jgb across [001] tilt grain boundaries (GBs) of thin film Ba(Fe1-xCox)2As2 bicrystals is strongly depressed, similar to high-Tc cuprates. Our results suggest that weak-linked GBs are characteristic of both cuprates and pnictides because of competing orders, low carrier density, and unconventional pairing symmetry. △ Less

Submitted 16 November, 2009; v1 submitted 21 July, 2009; originally announced July 2009.

Comments: To appear in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 95, 212505 (2009)

Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale

Authors: A. Gruverman, D. Wu, H. Lu, Y. Wang, H. W. Jang, C. M. Folkman, M. Ye. Zhuravlev, D. Felker, M. Rzchowski, C. -B. Eom, E. Y. Tsymbal

Abstract: Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect usin… ▽ More Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect using a combination of Piezoresponse Force Microscopy (PFM) and Conducting Atomic Force Microscopy (C-AFM) techniques on nanometer-thick epitaxial BaTiO3 single crystal thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by the direct nanoscale visualization and control of polarization and tunneling current in BaTiO3 films. The obtained results show a change in resistance by about two orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in non-volatile memory and logic devices, not involving charge as a state variable. △ Less

Submitted 8 June, 2009; originally announced June 2009.

Comments: 18 pages, 4 figures

Journal ref: Nano Lett., 2009, 9 (10), pp 3539-3543