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Phase-matching mechanism for high-harmonic generation in the overdriven regime driven by few-cycle laser pulses
Authors:
J. Schötz,
B. Förg,
W. Schweinberger,
I. Liontos,
H. A. Masood,
A. M. Kamal,
C. Jakubeit,
N. G. Kling,
T. Paasch-Colberg,
M. Högner,
I. Pupeza,
M. Alharbi,
M. F. Kling,
A. M. Azzeer
Abstract:
Isolated attosecond pulses (IAPs) produced through laser-driven high-harmonic generation (HHG) hold promise for unprecedented insight into biological processes via attosecond x-ray diffraction with tabletop sources. However, efficient scaling of HHG towards x-ray energies has been hampered by ionization-induced plasma generation impeding the coherent buildup of high-harmonic radiation. Recently, i…
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Isolated attosecond pulses (IAPs) produced through laser-driven high-harmonic generation (HHG) hold promise for unprecedented insight into biological processes via attosecond x-ray diffraction with tabletop sources. However, efficient scaling of HHG towards x-ray energies has been hampered by ionization-induced plasma generation impeding the coherent buildup of high-harmonic radiation. Recently, it has been shown that these limitations can be overcome in the so-called 'overdriven regime' where ionization loss and plasma dispersion strongly modify the driving laser pulse over small distances, albeit without demonstrating IAPs. Here, we report on experiments comparing the generation of IAPs in argon and neon at 80 eV via attosecond streaking measurements. Contrasting our experimental results with numerical simulations, we conclude that IAPs in argon are generated through ionization-induced transient phase-matching gating effective over distances on the order of 100 $μ$m. We show that the decay of the intensity and blue-shift due to plasma defocussing are crucial for allowing phase-matching close to the XUV cutoff at high plasma densities. We perform simulations for different gases and wavelengths and show that the mechanism is important for the phase-matching of long-wavelength, tightly-focused laser beams in high-pressure gas targets, which are currently being employed for scaling isolated attosecond pulse generation to x-ray photon energies.
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Submitted 17 December, 2019;
originally announced December 2019.
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Coupling of guided Surface Plasmon Polaritons to proximal self-assembled InGaAs Quantum Dots
Authors:
Gregor Bracher,
Konrad Schraml,
Mäx Blauth,
Clemens Jakubeit,
Kai Müller,
Gregor Koblmüller,
Max Bichler,
Michael Kaniber,
Jonathan J. Finley
Abstract:
We present investigations of the propagation length of guided surface plasmon polaritons along Au waveguides on GaAs and their coupling to near surface InGaAs self-assembled quantum dots. Our results reveal surface plasmon propagation lengths ranging from 13.4 {\pm} 1.7 μm to 27.5 {\pm} 1.5 μm as the width of the waveguide increases from 2-5 μm. Experiments performed on active structures containin…
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We present investigations of the propagation length of guided surface plasmon polaritons along Au waveguides on GaAs and their coupling to near surface InGaAs self-assembled quantum dots. Our results reveal surface plasmon propagation lengths ranging from 13.4 {\pm} 1.7 μm to 27.5 {\pm} 1.5 μm as the width of the waveguide increases from 2-5 μm. Experiments performed on active structures containing near surface quantum dots clearly show that the propagating plasmon mode excites the dot, providing a new method to spatially image the surface plasmon mode. We use low temperature confocal microscopy with polarization control in the excitation and detection channel. After excitation, plasmons propagate along the waveguide and are scattered into the far field at the end. By comparing length and width evolution of the waveguide losses we determine the plasmon propagation length to be 27.5 {\pm} 1.5 μm at 830 nm (for a width of 5 μm), reducing to 13.4 {\pm} 1.7 μm for a width of 2 μm. For active structures containing low density InGaAs quantum dots at a precisely controlled distance 7-120 nm from the Au-GaAs interface, we probed the mutual coupling between the quantum dot and plasmon mode. These investigations reveal a unidirectional energy transfer from the propagating surface plasmon to the quantum dot. The exquisite control of the position and shape afforded by lithography combined with near surface QDs promises efficient on-chip generation and guiding of single plasmons for future applications in nanoscale quantum optics operating below the diffraction limit.
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Submitted 22 March, 2012; v1 submitted 21 March, 2012;
originally announced March 2012.
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Direct measurement of plasmon propagation lengths on lithographically defined metallic waveguides on GaAs
Authors:
G. Bracher,
K. Schraml,
C. Jakubeit,
M. Kaniber,
J. J. Finley
Abstract:
We present optical investigations of rectangular surface plasmon polariton waveguides lithographically defined on GaAs substrates. The plasmon propagation length is directly determined using a confocal microscope, with independent polarization control in both excitation and detection channels. Surface plasmon polaritons are launched along the waveguide using a lithographically defined defect at on…
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We present optical investigations of rectangular surface plasmon polariton waveguides lithographically defined on GaAs substrates. The plasmon propagation length is directly determined using a confocal microscope, with independent polarization control in both excitation and detection channels. Surface plasmon polaritons are launched along the waveguide using a lithographically defined defect at one end. At the remote end of the waveguide they scatter into the far-field, where they are imaged using a CCD camera. By monitoring the length dependence of the intensity of scattered light from the waveguide end, we directly extract the propagation length, obtaining values ranging from LSPP = 10-40 μm depending on the waveguide width (w=2-5 μm) and excitation wavelength (760-920 nm). Results are in good accord with theoretical expectations demonstrating the high quality of the lithographically defined structures. The results obtained are of strong relevance for the development of future semiconductor based integrated plasmonic technologies.
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Submitted 19 October, 2011;
originally announced October 2011.
