Showing 1–4 of 4 results for author: Jaiswal, H N

Two-dimensional Cold Electron Transport for Steep-slope Transistors

Authors: Maomao Liu, Hemendra Nath Jaiswal, Simran Shahi, Sichen Wei, Yu Fu, Chaoran Chang, Anindita Chakravarty, Xiaochi Liu, Cheng Yang, Yanpeng Liu, Young Hee Lee, Fei Yao, Huamin Li

Abstract: Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the "Boltzmann tyranny" that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D fiel… ▽ More Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the "Boltzmann tyranny" that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D field-effect transistors (FETs). Here, we investigated a novel graphene (Gr)-enabled cold electron injection where the Gr acts as the Dirac source to provide the cold electrons with a localized electron density distribution and a short thermal tail at room temperature. These cold electrons correspond to an electronic cooling effect with the effective electron temperature of ~145 K in the monolayer MoS2, which enable the transport factor lowering and thus the steep-slope switching (across for 3 decades with a minimum SS of 29 mV/decade at room temperature) for a monolayer MoS2 FET. Especially, a record-high sub-60-mV/decade current density (over 1 μA/μm) can be achieved compared to conventional steep-slope technologies such as tunneling FETs or negative capacitance FETs using 2D or 3D channel materials. Our work demonstrates the great potential of 2D Dirac-source cold electron transistor as an innovative steep-slope transistor concept, and provides new opportunities for 2D materials toward future energy-efficient nanoelectronics. △ Less

Submitted 27 December, 2020; originally announced December 2020.

Comments: currently under review

Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride

Authors: Hemendra Nath Jaiswal, Maomao Liu, Simran Shahi, Sichen Wei, Jihea Lee, Anindita Chakravarty, Yutong Guo, Ruiqiang Wang, Jung Mu Lee, Chaoran Chang, Yu Fu, Ripudaman Dixit, Xiaochi Liu, Cheng Yang, Fei Yao, Huamin Li

Abstract: Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts which limit the performance potential for practical device applications. In this work, we exploit 2D monolayer hexagonal boron nitride (h-BN) as an ultrathin decorating layer to form a metal-insulator… ▽ More Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts which limit the performance potential for practical device applications. In this work, we exploit 2D monolayer hexagonal boron nitride (h-BN) as an ultrathin decorating layer to form a metal-insulator-semiconductor (MIS) contact, and demonstrate a novel diode-like selective enhancement of the carrier transport through it. Compared to the conventional MS contact, the MIS contact dominated by both thermionic emission and quantum tunneling can significantly reduce the contact resistance and boost the electron transport from the semiconductor to the metal, but has negligible effects on the electron transport oppositely. We also investigate the negative barrier height with the concept of carrier collection barrier, and show its critical role at the drain end for determining the overall transistor performance. △ Less

Submitted 21 July, 2020; v1 submitted 28 March, 2020; originally announced March 2020.

Comments: Currently under review

Enhanced Carrier Transport by Transition Metal Do** in WS2 Field Effect Transistors

Authors: Maomao Liu, Sichen Wei, Simran Shahi, Hemendra Nath Jaiswal, Paolo Paletti, Sara Fathipour, Maja Remskar, Jun Jiao, Wansik Hwang, Fei Yao, Huamin Li

Abstract: High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different do** strategies: (i) a "generalized" Cu do** by using randomly dis… ▽ More High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different do** strategies: (i) a "generalized" Cu do** by using randomly distributed Cu atoms along the channel and (ii) a "localized" Cu do** by adapting an ultrathin Cu layer at the metal-semiconductor interface. Compared to the pristine WS2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1 - 3 orders of magnitude, and consequently elevate electron mobilities by 5 - 7 times higher. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs. △ Less

Submitted 14 January, 2020; originally announced January 2020.

Comments: Under review

Localized Surface Plasmon Resonance on Two-Dimensional HfSe2 and ZrSe2

Authors: Hemendra Nath Jaiswal, Maomao Liu, Simran Shahi, Fei Yao, Qiyi Zhao, Xinlong Xu, Huamin Li

Abstract: HfSe2 and ZrSe2 are newly discovered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) with promising properties for future nanoelectronics and optoelectronics. We theoretically revealed the electronic and optical properties of these two emerging 2D semiconductors, and evaluated their performance for the application of localized surface plasmon resonance (LSPR) at extreme… ▽ More HfSe2 and ZrSe2 are newly discovered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) with promising properties for future nanoelectronics and optoelectronics. We theoretically revealed the electronic and optical properties of these two emerging 2D semiconductors, and evaluated their performance for the application of localized surface plasmon resonance (LSPR) at extreme conditions: in-plane direction versus out-of-plane direction and monolayer versus multilayer. First, the energy band structure and dielectric constants were calculated for both the monolayer and multilayer structures using Kohn-Sham density functional theory (KS-DFT) with van der Waals (vdW) corrections. A parallel-band effect observed in the monolayer band structure indicates a strong light-matter interaction. Then, based on the calculated dielectric constants, the performance of the LSPR excited by Au sphere nanoparticles (NPs) was quantitatively characterized, including polarizability, scattering and absorption cross-sections, and radiative efficiency using Mie theory. For the multilayer HfSe2 and ZrSe2, the LSPR showed very comparable intensities in both the in-plane and out-of-plane directions, suggesting an isotropy-like light-matter interaction. In a comparison, the LSPR excited on the monolayer HfSe2 and ZrSe2 was clearly observed in the in-plane direction but effectively suppressed in the out-of-plane direction due to the unique anisotropic nature. In addition to this extraordinary anisotropy-to-isotropy transition as the layer number increases, a red-shift of the LSPR wavelength was also found. Our work has predicated the thickness-dependent anisotropic light-matter interaction on the emerging 2D semiconducting HfSe2 and ZrSe2, which holds great potential for broad optoelectronic applications such as sensing and energy conversion. △ Less

Submitted 10 October, 2018; originally announced October 2018.

Comments: This manuscript has been submitted and is under review currently