Rhodium based half-Heusler alloys as possible optoelectronic and thermoelectric materials
Authors:
Dhurba Raj Jaishi,
Sujit Bati,
Nileema Sharma,
Bishnu Karki,
Bishnu Prasad Belbase,
Madhav Prasad Ghimire
Abstract:
On the basis of density functional theory and semi-classical Boltzmann theory, we have investigated the structural, elastic, electronic, optical and thermoelectric properties of 18--valence electron count rhodium based half-Heusler alloys focusing on RhTiP, RhTiAs, RhTiSb, and RhTiBi. The absence of imaginary frequencies in the phonon dispersion curve for these system verifies that they are struct…
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On the basis of density functional theory and semi-classical Boltzmann theory, we have investigated the structural, elastic, electronic, optical and thermoelectric properties of 18--valence electron count rhodium based half-Heusler alloys focusing on RhTiP, RhTiAs, RhTiSb, and RhTiBi. The absence of imaginary frequencies in the phonon dispersion curve for these system verifies that they are structurally stable. RhTiP is ductile in nature, while others are brittle. The alloys are found to be semiconducting with indirect band gaps ranging from 0.94 to 1.01 eV. Our calculations suggest these materials to have high absorption coefficient and optical conductivity in the ultraviolet as well as visible region. While considering thermoelectricity, we found that $p$--type do** is more favorable in improving the thermoelectric properties. The calculated values of power factor with $p$-type do** are comparable to some of the reported half-Heusler materials. The optimum figure of merit \zt\ is $\sim1$ for RhTiBi suggesting it as a promising candidate for thermoelectric applications while RhTiP, RhTiAs, and RhTiSb with optimum \zt \ values between 0.38 to 0.67 are possible candidates for use in thermoelectric devices.
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Submitted 5 May, 2021;
originally announced May 2021.
Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ
Authors:
Dhurba R. Jaishi,
Nileema Sharma,
Bishnu Karki,
Bishnu P. Belbase,
Rajendra P. Adhikari,
Madhav Prasad Ghimire
Abstract:
We have investigated the electronic and thermoelectric properties of half-Heusler alloys NiTZ (T = Sc, and Ti; Z = P, As, Sn, and Sb) having 18 valence electron. Calculations are performed by means of density functional theory and Boltzmann transport equation with constant relaxation time approximation, validated by NiTiSn. The chosen half-Heuslers are found to be an indirect band gap semiconducto…
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We have investigated the electronic and thermoelectric properties of half-Heusler alloys NiTZ (T = Sc, and Ti; Z = P, As, Sn, and Sb) having 18 valence electron. Calculations are performed by means of density functional theory and Boltzmann transport equation with constant relaxation time approximation, validated by NiTiSn. The chosen half-Heuslers are found to be an indirect band gap semiconductor, and the lattice thermal conductivity is comparable with the state-of-the-art thermoelectric materials. The estimated power factor for NiScP, NiScAs, and NiScSb reveals that their thermoelectric performance can be enhanced by appropriate do** rate. The value of ZT found for NiScP, NiScAs, and NiScSb are 0.46, 0.35, and 0.29, respectively at 1200 K.
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Submitted 20 December, 2020; v1 submitted 24 September, 2020;
originally announced September 2020.
