Showing 1–40 of 40 results for author: Jagadish, C

Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers

Authors: Stephen A Church, Francesco Vitale, Aswani Gopakumar, Nikita Gagrani, Yunyan Zhang, Nian Jiang, Hark Hoe Tan, Chennupati Jagadish, Huiyun Liu, Hannah Joyce, Carsten Ronning, Patrick Parkinson

Abstract: Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire lasers represent a flexible class of light source where each nanowire is both gain material and cavity; however, strong coupling between these properties and the p… ▽ More Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire lasers represent a flexible class of light source where each nanowire is both gain material and cavity; however, strong coupling between these properties and the performance leads to inhomogeneity across the population. While this has been studied and optimized for individual material systems, no architecture-wide insight is available. Here, nine nanowire laser material systems are studied and compared using 55,516 nanowire lasers to provide statistically robust insight into performance. These results demonstrate that, while it may be important to optimise internal quantum efficiency for certain materials, cavity effects are always critical. Our study provides a roadmap to optimize the performance of nanowire lasers made from any material: this can be achieved by ensuring a narrow spread of lengths and end-facet reflectivities. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Nanowire Array Breath Acetone Sensor for Diabetes Monitoring

Authors: Shiyu Wei, Zhe Li, Krishnan Murugappan, Ziyuan Li, Mykhaylo Lysevych, Kaushal Vora, Hark Hoe Tan, Chennupati Jagadish, Buddini I Karawdeniya, Christopher J Nolan, Antonio Tricoli, Lan Fu

Abstract: Diabetic ketoacidosis (DKA) is a life-threatening acute complication of diabetes in which ketone bodies accumulate in the blood. Breath acetone (a ketone) directly correlates with blood ketones, such that breath acetone monitoring could be used to improve safety in diabetes care. In this work, we report the design and fabrication of a chitosan/Pt/InP nanowire array based chemiresistive acetone sen… ▽ More Diabetic ketoacidosis (DKA) is a life-threatening acute complication of diabetes in which ketone bodies accumulate in the blood. Breath acetone (a ketone) directly correlates with blood ketones, such that breath acetone monitoring could be used to improve safety in diabetes care. In this work, we report the design and fabrication of a chitosan/Pt/InP nanowire array based chemiresistive acetone sensor. By implementing chitosan as a surface functionalization layer and a Pt Schottky contact for efficient charge transfer processes and photovoltaic effect, self-powered, highly selective acetone sensing has been achieved. This sensor has an ultra-wide detection range from sub-ppb to >100,000 ppm levels at room temperature, incorporating the range from healthy individuals (300-800 ppb) to those at high-risk of DKA (> 75 ppm). The nanowire sensor has been further integrated into a handheld breath testing prototype, the Ketowhistle, which can successfully detect different ranges of acetone concentrations in simulated breath. The Ketowhistle demonstrates immediate potential for non-invasive ketone testing and monitoring for persons living with diabetes, in particular for DKA prevention. △ Less

Submitted 1 December, 2023; originally announced December 2023.

An efficient modeling workflow for high-performance nanowire single-photon avalanche detector

Authors: Zhe Li, H. Hoe Tan, Chennupati Jagadish, Lan Fu

Abstract: Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in develo** next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire SPDs utilizing avalanche breakdown at reverse-biased conditions. The proposed workflow is explored to maximize computational efficiency and balance time-consumi… ▽ More Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in develo** next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire SPDs utilizing avalanche breakdown at reverse-biased conditions. The proposed workflow is explored to maximize computational efficiency and balance time-consuming drift-diffusion simulation with fast script-based post-processing. Without excessive computational effort, we could predict a suite of key device performance metrics, including breakdown voltage, dark/light avalanche built-up time, photon detection efficiency, dark count rate, and the deterministic part of timing jitter due to device structures. Implementing the proposed workflow onto a single InP nanowire and comparing it to the extensively studied planar devices and superconducting nanowire SPDs, we showed the great potential of nanowire avalanche SPD to outperform their planar counterparts and obtain as superior performance as superconducting nanowires, i.e., achieve a high photon detection efficiency of 70% with a dark count rate less than 20 Hz at non-cryogenic temperature. The proposed workflow is not limited to single-nanowire or nanowire-based device modeling and can be readily extended to more complicated two-/three dimensional structures. △ Less

Submitted 29 October, 2023; originally announced October 2023.

Post-growth sha** and transport anisotropy in 2D InAs nanofins

Authors: J. Seidl, J. G. Gluschke, X. Yuan, H. H. Tan, C. Jagadish, P. Caroff, A. P. Micolich

Abstract: We report on the post-growth sha** of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabrication. We use a citric acid based wet etch that enables complex shapes, e.g., van der Pauw cloverleaf structures, with patterning resolution down to 150 nm as well as partial thinning of the nanofin to improve the gate… ▽ More We report on the post-growth sha** of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabrication. We use a citric acid based wet etch that enables complex shapes, e.g., van der Pauw cloverleaf structures, with patterning resolution down to 150 nm as well as partial thinning of the nanofin to improve the gate response. We exploit the high sensitivity of the cloverleaf structures to transport anisotropy to address the fundamental question of whether there is a measurable transport anisotropy arising from wurtzite/zincblende polytypism in 2D InAs nanostructures. We demonstrate a mobility anisotropy of order 2-4 at room temperature arising from polytypic stacking faults in our nanofins. Our work highlights a key materials consideration for devices featuring self-assembled 2D III-V nanostructures using advanced epitaxy methods. △ Less

Submitted 14 May, 2023; originally announced May 2023.

Journal ref: ACS Nano 15, 7226 (2021)

Pushing limits of photovoltaics and photodetection using radial junction nanowire devices

Authors: Vidur Raj, Yi Zhu, Kaushal Vora, Lan Fu, Hark Hoe Tan, Chennupati Jagadish

Abstract: Nanowire devices have long been proposed as an efficient alternative to their planar counterparts for different optoelectronic applications. Unfortunately, challenges related to the growth and characterization of do** and p-n junction formation in nanowire devices (along axial or radial axis) have significantly impeded their development. The problems are further amplified if a p-n junction has t… ▽ More Nanowire devices have long been proposed as an efficient alternative to their planar counterparts for different optoelectronic applications. Unfortunately, challenges related to the growth and characterization of do** and p-n junction formation in nanowire devices (along axial or radial axis) have significantly impeded their development. The problems are further amplified if a p-n junction has to be implemented radially. Therefore, even though radial junction devices are expected to be on par with their axial junction counterparts, there are minimal reports on high-performance radial junction nanowire optoelectronic devices. This paper summarizes our recent results on the simulation and fabrication of radial junction nanowire solar cells and photodetectors, which have shown unprecedented performance and clearly demonstrate the importance of radial junction for optoelectronic applications. Our simulation results show that the proposed radial junction device is both optically and electrically optimal for solar cell and photodetector applications, especially if the absorber quality is extremely low. The radial junction nanowire solar cells could achieve a 17.2% efficiency, whereas the unbiased radial junction photodetector could show sensitivity down to a single photon level using an absorber with a lifetime of less than 50 ps. In comparison, the axial junction planar device made using same substrate as absorber showed less than 1% solar cell efficiency and almost no photodetection at 0 V. This study is conclusive experimental proof of the superiority of radial junction nanowire devices over their thin film or axial junction counterparts, especially when absorber lifetime is extremely low. The proposed device holds huge promise for III-V based photovoltaics and photodetectors. △ Less

Submitted 20 January, 2023; originally announced January 2023.

Decoupling the Roles of Defects/Impurities and Wrinkles in Thermal Conductivity of Wafer-scale hBN Films

Authors: Kousik Bera, Dipankar Chugh, Aditya Bandopadhyay, Hark Hoe Tan, Anushree Roy, Chennupati Jagadish

Abstract: We demonstrate a non-monotonic evolution of thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact technique, is employed to probe the temperature and laser power dependence property of the Raman active E2ghigh phonon mode, which in turn is used to estimate the rise… ▽ More We demonstrate a non-monotonic evolution of thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact technique, is employed to probe the temperature and laser power dependence property of the Raman active E2ghigh phonon mode, which in turn is used to estimate the rise in the temperature of the films under different laser powers. As the conventional Fourier law of heat diffusion cannot be directly employed analytically to evaluate the thermal conductivity of these films with defects and wrinkles, finite element modeling is used instead. In the model, average heat resistance is used to incorporate an overall defect structure, and Voronoi cells with contact resistance at the cell boundaries are constructed to mimic the wrinkled domains. The effective thermal conductivity is estimated to be 87, 55, and 117 W/m.K for the 2, 10, and 30 nm-thick films, respectively. We also present a quantitative estimation of the thermal resistance by defects and wrinkles individually to the heat flow. Our study reveals that the defects/impurities render a much higher resistance to heat transfer in the films than wrinkles. △ Less

Submitted 21 June, 2023; v1 submitted 16 November, 2022; originally announced November 2022.

Comments: 24 pages, 8 figures, minor changes

Self-powered InP Nanowire Photodetector for Single Photon Level Detection at Room Temperature

Authors: Yi Zhu, Vidur Raj, Ziyuan Li, Hark Hoe Tan, Chennupati Jagadish, Lan Fu

Abstract: Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations fo… ▽ More Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, we demonstrate InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias. We use top-down etched, heavily doped p-type InP nanowires and n-type AZO/ZnO carrier selective contact to form a radial p-n junction with a built-in electric field exceeding 3x10^5 V/cm at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway towards low-cost, high-sensitivity, self-powered photodetectors for numerous future applications. △ Less

Submitted 15 September, 2021; originally announced September 2021.

Ultralow Threshold, Single-Mode InGaAs/GaAs Multi-Quantum Disk Nanowire Lasers

Authors: Xutao Zhang, Ruixuan Yi, Nikita Gagrani, Ziyuan Li, Fanlu Zhang, Xuetao Gan, Xiaomei Yao, Xiaoming Yuan, Naiyin Wang, Jianlin Zhao, **** Chen, Wei Lu, Lan Fu, Hark Hoe Tan, Chennupati Jagadish

Abstract: We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by excellent NW morphology and InGaAs/GaAs mul… ▽ More We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by excellent NW morphology and InGaAs/GaAs multi-quantum disks. At 5 K, a threshold low as 1.6 μJ/cm2 per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface non-radiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm2 per pulse at room temperature with a high characteristic temperature of 223 K and power output of ~ 0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy. △ Less

Submitted 26 May, 2021; originally announced May 2021.

Journal ref: ACS Nano, 2021, 5, 5, 9126-9133

Axial vs. Radial Junction Nanowire Solar Cell

Authors: Vidur Raj, Hark Hoe Tan, Chennupati Jagadish

Abstract: Both axial and radial junction nanowire solar cells have their challenges and advantages. However, so far, there is no review that explicitly provides a detailed comparative analysis of both axial and radial junction solar cells. This article reviews some of the recent results on axial and radial junction nanowire solar cells with an attempt to perform a comparative study between the optical and d… ▽ More Both axial and radial junction nanowire solar cells have their challenges and advantages. However, so far, there is no review that explicitly provides a detailed comparative analysis of both axial and radial junction solar cells. This article reviews some of the recent results on axial and radial junction nanowire solar cells with an attempt to perform a comparative study between the optical and device behavior of these cells. In particular, we start by reviewing different results on how the absorption can be tuned in axial and radial junction solar cells. We also discuss results on some of the critical device concepts that are required to achieve high efficiency in axial and radial junction solar cells. We include a section on new device concepts that can be realized in nanowire structures. Finally, we conclude this review by discussing a few of the standing challenges of nanowire solar cells. △ Less

Submitted 24 March, 2021; originally announced March 2021.

Comments: It is a comparative review on axial vs. radial junction solar cell

Infrared up-conversion imaging in nonlinear metasurfaces

Authors: Rocio Camacho-Morales, Davide Rocco, Lei Xu, Valerio Flavio Gili, Nikolay Dimitrov, Lyubomir Stoyanov, Zhonghua Ma, Andrei Komar, Mykhaylo Lysevych, Fouad Karouta, Alexander Dreischuh, Hark Hoe Tan, Giuseppe Leo, Costantino De Angelis, Chennupati Jagadish, Andrey E. Miroshnichenko, Mohsen Rahmani, Dragomir N. Neshev

Abstract: Infrared imaging is a crucial technique in a multitude of applications, including night vision, autonomous vehicles navigation, optical tomography, and food quality control. Conventional infrared imaging technologies, however, require the use of materials like narrow-band gap semiconductors which are sensitive to thermal noise and often require cryogenic cooling. Here, we demonstrate a compact all… ▽ More Infrared imaging is a crucial technique in a multitude of applications, including night vision, autonomous vehicles navigation, optical tomography, and food quality control. Conventional infrared imaging technologies, however, require the use of materials like narrow-band gap semiconductors which are sensitive to thermal noise and often require cryogenic cooling. Here, we demonstrate a compact all-optical alternative to perform infrared imaging in a metasurface composed of GaAs semiconductor nanoantennas, using a nonlinear wave-mixing process. We experimentally show the up-conversion of short-wave infrared wavelengths via the coherent parametric process of sum-frequency generation. In this process, an infrared image of a target is mixed inside the metasurface with a strong pump beam, translating the image from infrared to the visible in a nanoscale ultra-thin imaging device. Our results open up new opportunities for the development of compact infrared imaging devices with applications in infrared vision and life sciences. △ Less

Submitted 5 January, 2021; originally announced January 2021.

Comments: 32 pages, 13 figures

Impact of invasive metal probes on Hall measurements in semiconductor nanostructures

Authors: J. G. Gluschke, J. Seidl, H. H. Tan, C. Jagadish, P. Caroff, A. P. Micolich

Abstract: Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device geometries that deviate significantly from the ideal of elongated Hall bars with currentless contacts. Many devices using these new materials have a low aspect ratio a… ▽ More Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device geometries that deviate significantly from the ideal of elongated Hall bars with currentless contacts. Many devices using these new materials have a low aspect ratio and feature metal Hall probes that overlap with the semiconductor channel. This can lead to a significant distortion of the current flow. We present experimental data from InAs 2D nanofin devices with different Hall probe geometries to study the influence of Hall probe length and width. We use finite-element simulations to further understand the implications of these aspects and expand the scope to contact resistance and sample aspect ratios. Our key finding is that invasive probes lead to a significant underestimation in the measured Hall voltage, typically of the order of 40-80%. This in turn leads to a subsequent proportional overestimation of carrier concentration and an underestimation of mobility △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 8 pages, 7 figures

Journal ref: Nanoscale 12, 20317-20325 (2020)

Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride

Authors: Noah Mendelson, Dipankar Chugh, Jeffrey R. Reimers, Tin S. Cheng, Andreas Gottscholl, Hu Long, Christopher J. Mellor, Alex Zettl, Vladimir Dyakonov, Peter H. Beton, Sergei V. Novikov, Chennupati Jagadish, Hark Hoe Tan, Michael J. Ford, Milos Toth, Carlo Bradac, Igor Aharonovich

Abstract: Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by… ▽ More Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices. △ Less

Submitted 20 April, 2020; v1 submitted 2 March, 2020; originally announced March 2020.

Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems

Authors: Dimitars Jevtics, John McPhillimy, Benoit Guilhabert, Juan A. Alanis, Hark Hoe Tan, Chennupati Jagadish, Martin D. Dawson, Antonio Hurtado, Patrick Parkinson, Michael J. Strain

Abstract: Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complement… ▽ More Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complementary, high-throughput techniques are combined: the characterisation of nanowire laser populations using automated optical microscopy, and a high accuracy transfer printing process with automatic device spatial registration and transfer. In this work a population of NW lasers is characterised, binned by threshold energy density and subsequently printed in arrays onto a secondary substrate. Statistical analysis of the transferred and control devices show that the transfer process does not incur measurable laser damage and the threshold binning can be maintained. Analysis is provided on the threshold and mode spectra of the device populations to investigate the potential for using NW lasers for integrated systems fabrication. △ Less

Submitted 7 January, 2020; originally announced January 2020.

Comments: 18 pages, 7 figures

Exploring the Band Structure of Wurtzite InAs Nanowires Using Photocurrent Spectroscopy

Authors: Seyyedesadaf Pournia, Samuel Linser, Giriraj Jnawali, Howard E. Jackson, Leigh M. Smith, Amira Ameruddin, Philippe Caroff, Jennifer Wong-Leung, Hark Hoe Tan, Chennupati Jagadish, Hannah J. Joyce

Abstract: We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with phot… ▽ More We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth substrate. From the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite InAs. This information is essential to the development of crystal phase engineering of this important III-V semiconductor. △ Less

Submitted 18 February, 2020; v1 submitted 16 September, 2019; originally announced September 2019.

Comments: 25 pages, 5 figures

Journal ref: Nano Research 2020

Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy

Authors: J. Seidl, J. G. Gluschke, X. Yuan, S. Naureen, N. Shahid, H. H. Tan, C. Jagadish, A. P. Micolich, P. Caroff

Abstract: We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, whilst retaining the benefits of bottom-up epitaxial growt… ▽ More We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, whilst retaining the benefits of bottom-up epitaxial growth. The transferred nanofins were made into devices featuring multiple contacts for Hall effect and four-terminal resistance studies, as well as a global back-gate and nanoscale local top-gates for density control. Hall studies give a 3D electron density $2.5~-~5 \times 10^{17}$ cm$^{-3}$, corresponding to an approximate surface accumulation layer density $3~-~6 \times 10^{12}$ cm$^{-2}$ that agrees well with previous studies of InAs nanowires. We obtain Hall mobilities as high as $1200$ cm$^{2}$/Vs, field-effect mobilities as high as $4400$ cm$^{2}$/Vs and clear quantum interference structure at temperatures as high as $20$ K. Our devices show excellent prospects for fabrication into more complicated devices featuring multiple ohmic contacts, local gates and possibly other functional elements, e.g., patterned superconductor contacts, that may make them attractive options for future quantum information applications. △ Less

Submitted 28 June, 2019; originally announced July 2019.

Comments: 36 pages, 5 figures, in press for Nano Letters

Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy

Authors: D. Tedeschi, M. De Luca, P. E. Faria Junior, A. Granados del Águila, Q. Gao, H. H. Tan, B. Scharf, P. C. M. Christianen, C. Jagadish, J. Fabian, A. Polimeni

Abstract: In this study, we present a complete experimental and theoretical investigation of the fundamental exciton Zeeman splitting in wurtzite InP nanowires. We determined the exciton gyromagnetic factor, $g_{exc}$, by magneto-photoluminescence spectroscopy using magnetic fields up to 29 T. We found that $g_{exc}$ is strongly anisotropic with values differing in excess of 50\% between the magnetic field… ▽ More In this study, we present a complete experimental and theoretical investigation of the fundamental exciton Zeeman splitting in wurtzite InP nanowires. We determined the exciton gyromagnetic factor, $g_{exc}$, by magneto-photoluminescence spectroscopy using magnetic fields up to 29 T. We found that $g_{exc}$ is strongly anisotropic with values differing in excess of 50\% between the magnetic field oriented parallel and perpendicular to the nanowire long axis. Furthermore, for magnetic fields oriented along the nanowire axis, $g_{exc}$ is nearly three times larger than in bulk zincblende InP and it shows a marked sublinear dependence on the magnetic field, a common feature to other non-nitride III-V wurtzite nanowires but not properly understood. Remarkably, this nonlinearity originates from only one Zeeman branch characterized by a specific type of light polarization. All the experimental findings are modeled theoretically by a robust approach combining the $k \cdot p$ method with the envelope function approximation and including the electron-hole interaction. We revealed that the nonlinear features arise due to the coupling between Landau levels pertaining to the A (heavy-hole like) and B (light-hole like) valence bands of the wurtzite crystal structure. This general behavior is particularly relevant for the understanding of the spin properties of several wurtzite nanowires that host the set for the observation of topological phases potentially at the base of quantum computing platforms. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 99, 161204 (2019)

Strong Hot Carrier Effects Observed in a Single Nanowire Heterostructure

Authors: Iraj Abbasian Shojaei, Samuel Linser, Giriraj Jnawali, N. Wickramasuriya, Howard E. Jackson, Leigh M. Smith, Fariborz Kargar, Alexander A. Balandin, Xiaoming Yuan, Philip Caroff, H. Hoe Tan, Chennupati Jagadish

Abstract: We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in single bare GaAsSb nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the LO phonon emission rate at low temperatu… ▽ More We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in single bare GaAsSb nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the LO phonon emission rate at low temperatures leading to strong hot carrier effects. △ Less

Submitted 16 September, 2019; v1 submitted 29 October, 2018; originally announced October 2018.

Comments: 17 pages, 5 figures

Journal ref: Nano Letters 19, 5062-5069 (2019)

Three-Leaf Dart-Shaped Single-Crystal BN Formation Promoted by Surface Oxygen

Authors: Hui Yang, ** Yang, Xibiao Ren, Haiyuan Chen, Chennupati Jagadish, Guang-Can Guo, Chuanhong **, Xiaobin Niu, Guo-** Guo

Abstract: Two-dimensional hexagonal boron nitride (h-BN) single crystals with various shapes have been synthesized by chemical vapor deposition over the past several years. Here we report the formation of three-leaf dart (3LD)-shaped single crystals of h-BN on Cu foil by atmospheric-pressure chemical vapor deposition. The leaves of the 3LD-shaped h-BN are as long as 18 μm and their edges are smooth armchair… ▽ More Two-dimensional hexagonal boron nitride (h-BN) single crystals with various shapes have been synthesized by chemical vapor deposition over the past several years. Here we report the formation of three-leaf dart (3LD)-shaped single crystals of h-BN on Cu foil by atmospheric-pressure chemical vapor deposition. The leaves of the 3LD-shaped h-BN are as long as 18 μm and their edges are smooth armchair on one side and stepped armchair on the other. Careful analysis revealed that surface oxygen plays an important role in the formation of the 3LD shape. Oxygen suppressed h-BN nucleation by passivating Cu surface active sites and lowered the edge attachment energy, which caused the growth kinetics to change to a diffusion-controlled mode. △ Less

Submitted 30 September, 2018; originally announced October 2018.

Comments: 7 pages,6 figures

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

Authors: A. R. Ullah, H. J. Joyce, H. H. Tan, C. Jagadish, A. P. Micolich

Abstract: We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N$_2$ and O$_2$, and N$_2$ bubbled through liquid H$_2$O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by… ▽ More We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N$_2$ and O$_2$, and N$_2$ bubbled through liquid H$_2$O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires. △ Less

Submitted 1 October, 2017; v1 submitted 14 June, 2017; originally announced June 2017.

Comments: Accepted for publication in Nanotechnology

Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry

Authors: D. J. Carrad, A. B. Mostert, A. R. Ullah, A. M. Burke, H. J. Joyce, H. H. Tan, C. Jagadish, P. Krogstrup, J. Nygård, P. Meredith, A. P. Micolich

Abstract: A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic poly… ▽ More A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic polymers, gels or electrolytes. Here we demonstrate a new class of organic-inorganic transducing interface featuring semiconducting nanowires electrostatically gated using a solid proton-transporting hygroscopic polymer. This model platform allows us to study the basic transducing mechanisms as well as deliver high fidelity signal conversion by tap** into and drawing together the best candidates from traditionally disparate realms of electronic materials research. By combining complementary n- and p-type transducers we demonstrate functional logic with significant potential for scaling towards high-density integrated bioelectronic circuitry. △ Less

Submitted 29 April, 2017; originally announced May 2017.

Journal ref: Nano Letters 17, 827-833 (2017)

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy

Authors: Bin Chen, Xuewen Fu, Jau Tang, Mykhaylo Lysevych, Hark Hoe Tan, Chennupati Jagadish, Ahmed H. Zewail

Abstract: Eutectic related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here we report the direct imaging and control of the ph… ▽ More Eutectic related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here we report the direct imaging and control of the phase reaction dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparticle, free from environmental confinement or disturbance, using four-dimensional electron microscopy. The non-destructive preparation of as-grown free-standing nanowires without supporting films allows us to study their anisotropic properties in their native environment with better statistical character. A laser heating pulse initiates the eutectic related reaction at a temperature much lower than the melting points of the composite materials, followed by a precisely time-delayed electron pulse to visualize the irreversible transient states of nucleation, growth and solidification of the complex. Combined with theoretical modeling, useful thermodynamic parameters of the newly formed alloy phases and their crystal structures could be determined. This technique of dynamical control and 4D imaging of phase reaction processes on the nanometer-ultrafast time scale open new venues for engineering various reactions in a wide variety of other systems. △ Less

Submitted 25 June, 2017; v1 submitted 19 January, 2017; originally announced January 2017.

Anomalous dynamic behaviour of optically trapped high aspect ratio nanowires

Authors: Wen Jun Toe, Ignacio O. Piwonka, Christopher Angstmann, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish, Bruce Henry, Peter J. Reece

Abstract: We investigate the dynamics of high aspect ratio nanowires trapped axially in a single gradient force optical tweezers. A power spectrum analysis of the Brownian dynamics reveals a broad spectral resonance of the order of a kHz with peak properties that are strongly dependent on the input trap** power. Modelling of the dynamical equations of motion of the trapped nanowire that incorporate non-co… ▽ More We investigate the dynamics of high aspect ratio nanowires trapped axially in a single gradient force optical tweezers. A power spectrum analysis of the Brownian dynamics reveals a broad spectral resonance of the order of a kHz with peak properties that are strongly dependent on the input trap** power. Modelling of the dynamical equations of motion of the trapped nanowire that incorporate non-conservative effects through asymmetric coupling between translational and rotational degrees of freedom provides excellent agreement with the experimental observations. An associated observation of persistent cyclical motion around the equilibrium trap** position using winding analysis provides further evidence for the influence of non-conservative forces. △ Less

Submitted 12 August, 2015; originally announced August 2015.

Atomically Thin Optical Lenses and Gratings

Authors: Jiong Yang, Zhu Wang, Fan Wang, Ren**g Xu, ** Tao, Shuang Zhang, Qinghua Qin, Barry Luther-Davies, Chennupati Jagadish, Zongfu Yu, Yuerui Lu

Abstract: Two-dimensional (2D) materials have emerged as promising candidates for miniaturized optoelectronic devices, due to their strong inelastic interactions with light. On the other hand, a miniaturized optical system also requires strong elastic light-matter interactions to control the flow of light. Here, we report giant optical path length (OPL) from a single-layer molybdenum disulfide (MoS2), which… ▽ More Two-dimensional (2D) materials have emerged as promising candidates for miniaturized optoelectronic devices, due to their strong inelastic interactions with light. On the other hand, a miniaturized optical system also requires strong elastic light-matter interactions to control the flow of light. Here, we report giant optical path length (OPL) from a single-layer molybdenum disulfide (MoS2), which is around one order of magnitude larger than that from a single-layer graphene. Using such giant OPL to engineer the phase front of optical beams, we demonstrated, to the best of our knowledge, the world's thinnest optical lens consisting of a few layers of MoS2 less than 6.3 nm thick. Moreover, we show that MoS2 has much better dielectric response than good conductor (like gold) and other dielectric materials (like Si, SiO2 or graphene). By taking advantage of the giant elastic scattering efficiency in ultra-thin high-index 2D materials, we demonstrated high-efficiency gratings based on a single- or few-layers of MoS2. The capability of manipulating the flow of light in 2D materials opens an exciting avenue towards unprecedented miniaturization of optical components and the integration of advanced optical functionalities. △ Less

Submitted 23 November, 2014; originally announced November 2014.

Carrier thermalization dynamics in single Zincblende and Wurtzite InP nanowires

Authors: Yuda Wang, Howard E. Jackson, Leigh M. Smith, Tim Burgess, Suriati Paiman, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish

Abstract: Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band to band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurem… ▽ More Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band to band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs. InP NW) and less strongly on crystal structure (ZB vs. WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NW reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures which lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices. △ Less

Submitted 30 October, 2014; originally announced October 2014.

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

Authors: D. J. Carrad, A. M. Burke, R. W. Lyttleton, H. J. Joyce, H. H. Tan, C. Jagadish, K. Storm, H. Linke, L. Samuelson, A. P. Micolich

Abstract: We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces… ▽ More We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. △ Less

Submitted 7 April, 2014; originally announced April 2014.

Comments: 20 pages, 4 figures. Supplementary information available at Nano Letters or by contact with APM

Journal ref: Nano Letters 14, 94 (2014)

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Authors: A. R. Ullah, H. J. Joyce, A. M. Burke, H. H. Tan, C. Jagadish, A. P. Micolich

Abstract: We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. △ Less

Submitted 18 June, 2013; originally announced June 2013.

Comments: Submitted to Physica Status Solidi - Rapid Research Letters Focus Issue on Semiconductor Nanowires

Co-development of significant elastic and reversible plastic deformation in nanowires

Authors: Peite Bao, Yanbo Wang, Xiangyuan Cui, Qiang Gao, Hongwei Liu, Wai Kong Yeoh, Hung-Wei Yen, Xiaozhou Liao, Sichao Du, H. Hoe Tan, Chennupati Jagadish, ** Zou, Simon P. Ringer, Rongkun Zheng

Abstract: When a material is subjected to an applied stress, the material will experience recoverable elastic deformation followed by permanent plastic deformation at the point when the applied stress exceeds the yield stress of the material. Microscopically, the onset of the plasticity usually indicates the activation of dislocation motion, which is considered to be the primary mechanism of plastic deforma… ▽ More When a material is subjected to an applied stress, the material will experience recoverable elastic deformation followed by permanent plastic deformation at the point when the applied stress exceeds the yield stress of the material. Microscopically, the onset of the plasticity usually indicates the activation of dislocation motion, which is considered to be the primary mechanism of plastic deformation. Once plastic deformation is initiated, further elastic deformation is negligible owing to the limited increase in the flow stress caused by work hardening. Here we present experimental evidence and quantitative analysis of simultaneous development of significant elastic deformation and dislocation-based plastic deformation in single crystal GaAs nanowires (NWs) under bending deformation up to a total strain of ~ 6%. The observation is in sharp contrast to the previous notions regarding the deformation modes. Most of the plastic deformation recovers spontaneously when the external stress is released, and therefore resembles an elastic deformation process. △ Less

Submitted 12 March, 2013; originally announced March 2013.

Progress Towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures

Authors: Laurens H. Willems van Beveren, Jeffrey C. McCallum, Hoe H. Tan, Chennupati Jagadish

Abstract: In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diod… ▽ More In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium (and base) temperature to be used for opto-electronic device characterization. △ Less

Submitted 11 March, 2013; originally announced March 2013.

Comments: 2 pages Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference

Electro-optical switching by liquid-crystal controlled metasurfaces

Authors: Manuel Decker, Christian Kremers, Alexander Minovich, Isabelle Staude, Andrey E. Miroshnichenko, Dmitry Chigrin, Dragomir N. Neshev, Chennupati Jagadish, Yuri S. Kivshar

Abstract: We study the optical response of a metamaterial surface created by a lattice of split-ring resonators covered with a nematic liquid crystal and demonstrate millisecond timescale switching between electric and magnetic resonances of the metasurface. This is achieved due to a high sensitivity of liquid-crystal molecular reorientation to the symmetry of the metasurface as well as to the presence of a… ▽ More We study the optical response of a metamaterial surface created by a lattice of split-ring resonators covered with a nematic liquid crystal and demonstrate millisecond timescale switching between electric and magnetic resonances of the metasurface. This is achieved due to a high sensitivity of liquid-crystal molecular reorientation to the symmetry of the metasurface as well as to the presence of a bias electric field. Our experiments are complemented by numerical simulations of the liquid-crystal reorientation. △ Less

Submitted 18 February, 2013; originally announced February 2013.

Comments: 6 pages, 3 figures

Journal ref: Optics Express 21, 8879-8885 (2013)

Tapered Yagi-Uda Nanoantennas for Broadband Unidirectional Emission

Authors: Isabelle Staude, Ivan S. Maksymov, Manuel Decker, Andrey E. Miroshnichenko, Dragomir N. Neshev, Chennupati Jagadish, Yuri S. Kivshar

Abstract: We demonstrate experimentally the operation of tapered Yagi-Uda nanoantennas for broadband unidirectional emission enhancement. The measured transmittance spectra show that, in comparison to untapered reference structures, the tapered nanoantennas exhibit distinct wide-band spectral resonances. The performed full-vectorial numerical calculations are in good qualitative agreement with the measured… ▽ More We demonstrate experimentally the operation of tapered Yagi-Uda nanoantennas for broadband unidirectional emission enhancement. The measured transmittance spectra show that, in comparison to untapered reference structures, the tapered nanoantennas exhibit distinct wide-band spectral resonances. The performed full-vectorial numerical calculations are in good qualitative agreement with the measured spectra, further revealing how the near-field profiles of the tapered nanoantennas are directly reflecting their broadband characteristics. △ Less

Submitted 27 June, 2012; originally announced June 2012.

Journal ref: E. Miroshnichenko, DI. Staude, I. S. Maksymov, M. Decker, A. . N. Neshev, C. Jagadish, and Yu. S. Kivshar, 'Broadband scattering by tapered nano-antennas', Phys. Status Solidi RRL 6, 466-468 (2012)

Spin Selective Purcell Effect in a Quantum Dot Microcavity System

Authors: Qijun Ren, Jian Lu, H. H. Tan, Shan Wu, Liaoxin Sun, Weihang Zhou, Wei Xie, Zheng Sun, Yongyuan Zhu, C. Jagadish, S. C. Shen, Zhanghai Chen

Abstract: We demonstrate the selective coupling of a single quantum dot exciton spin state with the cavity mode in a quantum dot-micropillar cavity system. By tuning an external magnetic field, the Zeeman splitted exciton spin states coupled differently with the cavity due to field manipulated energy detuning. We found a 26 times increase in the emission intensity of spin-up exciton state with respect to sp… ▽ More We demonstrate the selective coupling of a single quantum dot exciton spin state with the cavity mode in a quantum dot-micropillar cavity system. By tuning an external magnetic field, the Zeeman splitted exciton spin states coupled differently with the cavity due to field manipulated energy detuning. We found a 26 times increase in the emission intensity of spin-up exciton state with respect to spin-down exciton state at resonance due to Purcell effect, which gives rise to the selective enhancement of light emission with the circular polarization degree up to 93%. A four-level rate equation model is developed and quantitatively agrees well with our experimental data. Our results pave the way for the realization of future quantum light sources and the quantum information processing applications. △ Less

Submitted 5 October, 2011; v1 submitted 5 August, 2010; originally announced August 2010.

Comments: 11 pages, 4 figures

Extraordinary transmission of nanohole lattices in gold films

Authors: Alexander Minovich, Haroldo T. Hattori, Ian McKerracher, Hark Hoe Tan, Dragomir N. Neshev, Chennupati Jagadish, Yuri S. Kivshar

Abstract: We study experimentally the transmission of light through a square lattice of nanoholes perforated in a optically-thick gold film. We observe that the periodicity of the structure enhances the light transmission for specific wavelengths, and we analyze this effect theoretically by employing finite-difference time-domain numerical simulations. Furthermore, we investigate the possibilities for man… ▽ More We study experimentally the transmission of light through a square lattice of nanoholes perforated in a optically-thick gold film. We observe that the periodicity of the structure enhances the light transmission for specific wavelengths, and we analyze this effect theoretically by employing finite-difference time-domain numerical simulations. Furthermore, we investigate the possibilities for manipulation of the spectral transmission in quasi-periodic and chirped lattices consisting of square nanoholes with varying hole size or lattice periodicity. △ Less

Submitted 2 July, 2008; originally announced July 2008.

Comments: 6 pages, 8 figures

Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

Authors: J. Lloyd-Hughes, S. K. E. Merchant, F. Lan, H. H. Tan, C. Jagadish, E. Castro-Camus, M. B. Johnston

Abstract: The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoe… ▽ More The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump THz-probe spectroscopy, and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state density and surface recombination velocity of GaAs. Finally, we have demonstrated that passivation leads to an enhancement in the power radiated by photoconductive switch THz emitters, thereby showing the important influence of surface chemistry on the performance of ultrafast THz photonic devices. △ Less

Submitted 20 October, 2006; originally announced October 2006.

Comments: 4 pages, 3 figures, to appear in Applied Physics Letters

Imaging and optical properties of single core-shell GaAs-AlGaAs nanowires

Authors: Thang B. Hoang, L. V. Titova, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Y. Kim, H. J. Joyce, C. Jagadish

Abstract: We study the optical properties of a single core-shell GaAs-AlGaAs nanowire (grown by VLS method) using the technique of micro-photoluminescence and spatially-resolved photoluminescence imaging. We observe large linear polarization anisotropy in emission and excitation of nanowires. We study the optical properties of a single core-shell GaAs-AlGaAs nanowire (grown by VLS method) using the technique of micro-photoluminescence and spatially-resolved photoluminescence imaging. We observe large linear polarization anisotropy in emission and excitation of nanowires. △ Less

Submitted 2 August, 2006; originally announced August 2006.

Comments: IEEE Nano 2006 Proceedings

Detecting the full polarisation state of terahertz transients

Authors: E. Castro-Camus, J. Lloyd-Hughes, M. D. Fraser, H. H. Tan, C. Jagadish, M. B. Johnston

Abstract: We have developed a detector which records the full polarisation state of a terahertz (THz) pulse propagating in free space. The three-electrode photoconductive receiver simultaneously records the electric field of an electromagnetic pulse in two orthogonal directions as a function of time. A prototype device fabricated on Fe+ ion implanted InP exhibited a cross polarised extinction ratio better… ▽ More We have developed a detector which records the full polarisation state of a terahertz (THz) pulse propagating in free space. The three-electrode photoconductive receiver simultaneously records the electric field of an electromagnetic pulse in two orthogonal directions as a function of time. A prototype device fabricated on Fe+ ion implanted InP exhibited a cross polarised extinction ratio better than 390:1. The design and optimisation of this device are discussed along with its significance for the development of new forms of polarisation sensitive time domain spectroscopy, including THz circular dichroism spectroscopy. △ Less

Submitted 14 March, 2006; originally announced March 2006.

Comments: 7 pages, 6 figures, conference

Journal ref: Proc. of SPIE Vol. 6120, 61200Q, (2005)

Simulation and optimization of arsenic-implanted THz emitters

Authors: M. B. Johnston, J. Lloyd-Hughes, E. Castro-Camus, M. D. Fraser, C. Jagadish

Abstract: We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As+ ionimplantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As+ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributin… ▽ More We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As+ ionimplantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As+ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributing to THz generation in these devices. We calculate that ionimplantation increases the THz bandwidth of the devices with the cost of decreasing the spectral intensity at lower THz frequencies. △ Less

Submitted 10 February, 2006; v1 submitted 9 February, 2006; originally announced February 2006.

Comments: 2 pages, 3figures, conference abstract

Polarisation-Sensitive THz Detectors

Authors: M. B. Johnston, E. Castro-Camus, J. Lloyd-Hughes, M. D. Fraser, H. H. Tan, C. Jagadish

Abstract: We have developed a detector of coherent terahertz (THz) radiation that can recover the full polarisation state of a THz transient. The device is three-contact photoconductive receiver, which is capable of recording two time-varying electric field components of a THz pulse simultaneously. Our receiver was fabricated on Fe+ implanted InP and showed a cross-polarised extinction ratio greater than… ▽ More We have developed a detector of coherent terahertz (THz) radiation that can recover the full polarisation state of a THz transient. The device is three-contact photoconductive receiver, which is capable of recording two time-varying electric field components of a THz pulse simultaneously. Our receiver was fabricated on Fe+ implanted InP and showed a cross-polarised extinction ratio greater than 100:1. The detector will be useful for spectroscopy of birefringent and optically active materials. △ Less

Submitted 9 February, 2006; originally announced February 2006.

Comments: 2 pages, 3 figures, conference abstract

Photoconductive detection of arbitrary polarised terahertz pulses

Authors: E. Castro-Camus, J. Lloyd-Hughes, M. B. Johnston, M. D. Fraser, H. H. Tan, C. Jagadish

Abstract: To perform polarization sensitive THz-TDS, it is necessary to be able to measure two (preferably orthogonal) electric field components of a terahertz transient. We have developed a polarization sensitive detector by fabricating a three-contact photoconductive receiver. To perform polarization sensitive THz-TDS, it is necessary to be able to measure two (preferably orthogonal) electric field components of a terahertz transient. We have developed a polarization sensitive detector by fabricating a three-contact photoconductive receiver. △ Less

Submitted 2 February, 2006; originally announced February 2006.

Comments: Conference, 1 page, 1 figure

Polarisation-sensitive terahertz detection by multicontact photoconductive receivers

Authors: E. Castro-Camus, J. Lloyd-Hughes, M. B. Johnston, M. D. Fraser, H. H. Tan, C. Jagadish

Abstract: We have developed a terahertz radiation detector that measures both the amplitude and polarization of the electric field as a function of time. The device is a three-contact photoconductive receiver designed so that two orthogonal electric-field components of an arbitrary polarized electromagnetic wave may be detected simultaneously. The detector was fabricated on Fe+ ion-implanted InP. Polariza… ▽ More We have developed a terahertz radiation detector that measures both the amplitude and polarization of the electric field as a function of time. The device is a three-contact photoconductive receiver designed so that two orthogonal electric-field components of an arbitrary polarized electromagnetic wave may be detected simultaneously. The detector was fabricated on Fe+ ion-implanted InP. Polarization-sensitive detection is demonstrated with an extinction ratio better than 100:1. This type of device will have immediate application in studies of birefringent and optically active materials in the far-infrared region of the spectrum. △ Less

Submitted 4 October, 2005; originally announced October 2005.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 86, 254102 (2005)

Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission

Authors: J. Lloyd-Hughes, E. Castro-Camus, M. D. Fraser, C. Jagadish, M. B. Johnston

Abstract: We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multi-energy implantations of arsenic ions (1 and 2.4MeV) and subsequent thermal annealing. In a series of THz emission experiments the… ▽ More We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multi-energy implantations of arsenic ions (1 and 2.4MeV) and subsequent thermal annealing. In a series of THz emission experiments the frequency of peak THz power was found to increase significantly from 1.4 to 2.2THz when the ion implantation dose was increased from 10^13 to 10^16 cm-3. We used a semi-classical Monte-Carlo simulation of ultra-fast carrier dynamics to reproduce and explain these results. The effect of the ion-induced damage was included in the simulation by considering carrier scattering at neutral and charged impurities, as well as carrier trap** at defect sites. Higher vacancy concentrations and shorter carrier trap** times both contributed to shorter simulated THz pulses, the latter being more important over experimentally realistic parameter ranges. △ Less

Submitted 11 July, 2005; originally announced July 2005.

Comments: 6 pages, 7 figures

Journal ref: Physical Review B 70, 235330 (2005)