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Unique Ferroelectric Fatigue Behavior and Exceptional High Temperature Retention in Al0.93B0.07N Films
Authors:
Wanlin Zhu,
Fan He,
John Hayden,
Quyen Tran,
Jung In Yang,
Pannawit Tipsawat,
Brian Foley,
Thomas N. Jackson,
Jon-Paul Maria,
Susan Trolier-McKinstry
Abstract:
This paper reports the fatigue and retention behavior for Al1-xBxN thin films, a member of the novel family of wurtzite ferroelectrics, with an emphasis on the role of capacitor architecture. By modifying the capacitor architecture, and thus thermal and electrical boundary conditions, we create insight regarding the relative importance of intrinsic and extrinsic contributors to the degradation ten…
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This paper reports the fatigue and retention behavior for Al1-xBxN thin films, a member of the novel family of wurtzite ferroelectrics, with an emphasis on the role of capacitor architecture. By modifying the capacitor architecture, and thus thermal and electrical boundary conditions, we create insight regarding the relative importance of intrinsic and extrinsic contributors to the degradation tendencies. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al0.93B0.07N/W/Al2O3 film stacks first induced wake-up, then a region of constant switchable polarization. On additional cycling, the film leakage current increased, and then films underwent dielectric breakdown. For unpatterned first generation Al0.93B0.07N films with 100 nm thick Pt top electrodes survive ~104 bipolar cycles, whereas films with 1000 nm W top electrodes survive ~10^5 cycles before thermal dielectric breakdown. Sentaurus modeling was used to design an SU8 field plate which improved the performance to ~10^6 fatigue cycles. It was found that the thermal failures during fatigue were not due to surface flashover events but were associated with hard breakdown events in the dielectric. The films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6x10^6 sec (1000 hr). at 200°C, the OS signal margin still exceeded 200 uC/cm2. The predicted OS retention is 82% after 10 years baking at 200oC.
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Submitted 12 August, 2022;
originally announced August 2022.
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Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3
Authors:
Justin R. Rodriguez,
William Murray,
Kazunori Fujisawa,
Seng Huat Lee,
Alexandra L. Kotrick,
Yixuan Chen,
Nathan Mckee,
Sora Lee,
Mauricio Terrones,
Susan Trolier-McKinstry,
Thomas N. Jackson,
Zhiqiang Mao,
Zhiwen Liu,
Ying Liu
Abstract:
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarizat…
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Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarization and an electric field induced metallic state in α-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of the integration of data storage and logic operations in the same device.
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Submitted 11 August, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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Lithography-Free Fabrication of Graphene Devices
Authors:
N. Staley,
H. Wang,
C. Puls,
J. Forster,
T. N. Jackson,
K. McCarthy,
B. Clouser,
Y. Liu
Abstract:
We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask to avoid possible contamination of graphene during lithographic process. This technique was used to prepare devices for electrical transport as well as planar tunnel junction studies of n-layer graphene (nLG), with n = 1, 2, 3 and higher. We observed localiza…
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We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask to avoid possible contamination of graphene during lithographic process. This technique was used to prepare devices for electrical transport as well as planar tunnel junction studies of n-layer graphene (nLG), with n = 1, 2, 3 and higher. We observed localization behavior and an apparent reduction of density of states (DOS) near the Fermi energy in nLG.
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Submitted 5 December, 2006;
originally announced December 2006.
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Applications of Gas Imaging Micro-Well Detectors to an Advanced Compton Telescope
Authors:
P. F. Bloser,
S. D. Hunter,
J. M. Ryan,
M. L. McConnell,
R. S. Miller,
T. N. Jackson,
B. Bai,
S. Jung
Abstract:
We present a concept for an Advanced Compton Telescope (ACT) based on the use of pixelized gas micro-well detectors to form a three-dimensional electron track imager. A micro-well detector consists of an array of individual micro-patterned proportional counters opposite a planar drift electrode. When combined with thin film transistor array readouts, large gas volumes may be imaged with very goo…
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We present a concept for an Advanced Compton Telescope (ACT) based on the use of pixelized gas micro-well detectors to form a three-dimensional electron track imager. A micro-well detector consists of an array of individual micro-patterned proportional counters opposite a planar drift electrode. When combined with thin film transistor array readouts, large gas volumes may be imaged with very good spatial and energy resolution at reasonable cost. The third dimension is determined from the drift time of the ionization electrons. The primary advantage of this approach is the excellent tracking of the Compton recoil electron that is possible in a gas volume. Such good electron tracking allows us to reduce the point spread function of a single incident photon dramatically, greatly improving the imaging capability and sensitivity. The polarization sensitivity, which relies on events with large Compton scattering angles, is particularly enhanced. We describe a possible ACT implementation of this technique, in which the gas tracking volume is surrounded by a CsI calorimeter, and present our plans to build and test a small prototype over the next three years.
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Submitted 26 September, 2003;
originally announced September 2003.
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Ballistic Transport and Andreev Resonances in Nb-In Superconducting Contacts to InAs and LTG-GaAs
Authors:
T. Rizk,
A. Yulius,
W. I. Yoo,
P. F. Bagwell,
D. McInturff,
P. Chin,
J. M. Woodall,
T. M. Pekarek,
T. N. Jackson
Abstract:
We have formed superconducting contacts in which Cooper pairs incident from a thick In layer must move through a thin Nb layer to reach a semiconductor, either InAs or low temperature grown (LTG) GaAs. The effect of pair tunneling through the Nb layer can be seen by varying the temperature through the critical temperature of In. Several of the In/Nb-InAs devices display a peak in the differentia…
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We have formed superconducting contacts in which Cooper pairs incident from a thick In layer must move through a thin Nb layer to reach a semiconductor, either InAs or low temperature grown (LTG) GaAs. The effect of pair tunneling through the Nb layer can be seen by varying the temperature through the critical temperature of In. Several of the In/Nb-InAs devices display a peak in the differential conductance near zero-bias voltage, which is strong evidence of ballistic transport across the NS interface. The differential conductance of the In/Nb-(LTG) GaAs materials system displays conductance resonances of McMillan-Rowell type. These resonant levels exist within a band of conducting states inside the energy gap, formed from excess As incorporation into the (LTG) GaAs during growth. Electrons propagating in this band of states multiply reflect between the superconductor and a potential barrier in the GaAs conduction band to form the conductance resonances. A scattering state theory of the differential conductance, including Andreev reflections from the composite In/Nb contact, accounts for most qualitative features in the data.
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Submitted 15 April, 1999;
originally announced April 1999.
