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Probing electron-phonon interactions away from the Fermi level with resonant inelastic x-ray scattering
Authors:
C. D. Dashwood,
A. Geondzhian,
J. G. Vale,
A. C. Pakpour-Tabrizi,
C. A. Howard,
Q. Faure,
L. S. I. Veiga,
D. Meyers,
S. G. Chiuzbaian,
A. Nicolaou,
N. Jaouen,
R. B. Jackman,
A. Nag,
M. Garcia-Fernandez,
Ke-** Zhou,
A. C. Walters,
K. Gilmore,
D. F. McMorrow,
M. P. M. Dean
Abstract:
Interactions between electrons and lattice vibrations are responsible for a wide range of material properties and applications. Recently, there has been considerable interest in the development of resonant inelastic x-ray scattering (RIXS) as a tool for measuring electron-phonon (e-ph) interactions. Here, we demonstrate the ability of RIXS to probe the interaction between phonons and specific elec…
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Interactions between electrons and lattice vibrations are responsible for a wide range of material properties and applications. Recently, there has been considerable interest in the development of resonant inelastic x-ray scattering (RIXS) as a tool for measuring electron-phonon (e-ph) interactions. Here, we demonstrate the ability of RIXS to probe the interaction between phonons and specific electronic states both near to, and away from, the Fermi level. We performed carbon $K$-edge RIXS measurements on graphite, tuning the incident x-ray energy to separately probe the interactions of the $π^*$ and $σ^*$ electronic states. Our high-resolution data reveals detailed structure in the multi-phonon RIXS features that directly encodes the momentum dependence of the e-ph interaction strength. We develop a Green's-function method to model this structure, which naturally accounts for the phonon and interaction-strength dispersions, as well as the mixing of phonon momenta in the intermediate state. This model shows that the differences between the spectra can be fully explained by contrasting trends of the e-ph interaction through the Brillouin zone, being concentrated at the $Γ$ and $K$ points for the $π^*$ states, while being significant at all momenta for the $σ^*$ states. Our results advance the interpretation of phonon excitations in RIXS, and extend its applicability as a probe of e-ph interactions to a new range of out-of-equilibrium situations.
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Submitted 11 March, 2022; v1 submitted 18 October, 2021;
originally announced October 2021.
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The occupied electronic structure of ultrathin boron doped diamond
Authors:
A. K. Schenk,
A. C. Pakpour-Tabrizi,
A. J. U. Holt,
S. K. Mahatha,
F. Arnold,
M. Bianchi,
R. B. Jackman,
J. A. Miwa,
Ph. Hofmann,
S. P. Cooil,
J. W. Wells,
F. Mazzola
Abstract:
Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their ph…
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Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.
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Submitted 1 July, 2019;
originally announced July 2019.
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Simultaneous conduction and valence band quantisation in ultra-shallow, high density do** profiles in semiconductors
Authors:
F. Mazzola,
J. W. Wells,
A. C. Pakpour-Tabrizi,
R. B. Jackman,
B. Thiagarajan,
Ph. Hofmann,
J. A. Miwa
Abstract:
We demonstrate simultaneous quantisation of conduction band (CB) and valence band (VB) states in silicon using ultra-shallow, high density, phosphorus do** profiles (so-called Si:P $δ$-layers). We show that, in addition to the well known quantisation of CB states within the dopant plane, the confinement of VB-derived states between the sub-surface P dopant layer and the Si surface gives rise to…
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We demonstrate simultaneous quantisation of conduction band (CB) and valence band (VB) states in silicon using ultra-shallow, high density, phosphorus do** profiles (so-called Si:P $δ$-layers). We show that, in addition to the well known quantisation of CB states within the dopant plane, the confinement of VB-derived states between the sub-surface P dopant layer and the Si surface gives rise to a simultaneous quantisation of VB states in this narrow region. We also show that the VB quantisation can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantised VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantised CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantised CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.
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Submitted 31 December, 2017;
originally announced January 2018.
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Charge Transfer Properties Through Graphene for Applications in Gaseous Detectors
Authors:
S. Franchino,
D. Gonzalez-Diaz,
R. Hall-Wilton,
R. B. Jackman,
H. Muller,
T. T. Nguyen,
R. de Oliveira,
E. Oliveri,
D. Pfeiffer,
F. Resnati,
L. Ropelewski,
J. Smith,
M. van Stenis,
C. Streli,
P. Thuiner,
R. Veenhof
Abstract:
Graphene is a single layer of carbon atoms arranged in a honeycomb lattice with remarkable mechanical and electrical properties. Regarded as the thinnest and narrowest conductive mesh, it has drastically different transmission behaviours when bombarded with electrons and ions in vacuum. This property, if confirmed in gas, may be a definitive solution for the ion back-flow problem in gaseous detect…
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Graphene is a single layer of carbon atoms arranged in a honeycomb lattice with remarkable mechanical and electrical properties. Regarded as the thinnest and narrowest conductive mesh, it has drastically different transmission behaviours when bombarded with electrons and ions in vacuum. This property, if confirmed in gas, may be a definitive solution for the ion back-flow problem in gaseous detectors. In order to ascertain this aspect, graphene layers of dimensions of about 2x2cm$^2$, grown on a copper substrate, are transferred onto a flat metal surface with holes, so that the graphene layer is freely suspended. The graphene and the support are installed into a gaseous detector equipped with a triple Gaseous Electron Multiplier (GEM), and the transparency properties to electrons and ions are studied in gas as a function of the electric fields. The techniques to produce the graphene samples are described, and we report on preliminary tests of graphene-coated GEMs.
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Submitted 16 December, 2015;
originally announced December 2015.
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Charge Transfer Properties Through Graphene Layers in Gas Detectors
Authors:
P. Thuiner,
R. Hall-Wilton,
R. B. Jackman,
H. Müller,
T. T. Nguyen,
E. Oliveri,
D. Pfeiffer,
F. Resnati,
L. Ropelewski,
J. A. Smith,
M. van Stenis,
R. Veenhof
Abstract:
Graphene is a single layer of carbon atoms arranged in a honeycomb lattice with remarkable mechanical, electrical and optical properties. For the first time graphene layers suspended on copper meshes were installed into a gas detector equipped with a gaseous electron multiplier. Measurements of low energy electron and ion transfer through graphene were conducted. In this paper we describe the samp…
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Graphene is a single layer of carbon atoms arranged in a honeycomb lattice with remarkable mechanical, electrical and optical properties. For the first time graphene layers suspended on copper meshes were installed into a gas detector equipped with a gaseous electron multiplier. Measurements of low energy electron and ion transfer through graphene were conducted. In this paper we describe the sample preparation for suspended graphene layers, the testing procedures and we discuss the preliminary results followed by a prospect of further applications.
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Submitted 23 March, 2015;
originally announced March 2015.
