Showing 1–10 of 10 results for author: Jabeen, F

Topological Optical Waveguiding of Exciton-Polariton Condensates

Authors: Johannes Beierlein, Oleg A. Egorov, Philipp Gagel, Tristan H. Harder, Adriana Wolf, Monika Emmerling, Simon Betzold, Fauzia Jabeen, Libo Ma, Sven Höfling, Ulf Peschel, Sebastian Klembt

Abstract: One-dimensional models with topological non-trivial band structures are a simple and effective way to study novel and exciting concepts in topological photonics. In this work we are studying the propagation of light-matter quasi-particles, so called exciton-polaritons, in waveguide arrays. Specifically, we are investigating topological states at the interface between dimer chains, characterized by… ▽ More One-dimensional models with topological non-trivial band structures are a simple and effective way to study novel and exciting concepts in topological photonics. In this work we are studying the propagation of light-matter quasi-particles, so called exciton-polaritons, in waveguide arrays. Specifically, we are investigating topological states at the interface between dimer chains, characterized by a non-zero winding number. In order to exercise precise control over the polariton propagation, we study non-resonant laser excitation as well as resonant excitation in transmission geometry. The results highlight a new platform for the study of quantum fluids of light and non-linear optical propagation effects in coupled semiconductor waveguides. △ Less

Submitted 21 February, 2024; originally announced February 2024.

An electrically pumped topological polariton laser

Authors: Philipp Gagel, Oleg A. Egorov, Franciszek Dzimira, Johannes Beierlein, Monika Emmerling, Adriana Wolf, Fauzia Jabeen, Simon Betzold, Ulf Peschel, Sven Höfling, Christian Schneider, Sebastian Klembt

Abstract: With a seminal work of Raghu and Haldane in 2008, concepts of topology have been successfully introduced in a wide range of optical systems, emulating specific lattice Hamiltonians. Certainly, one of the most promising routes to an application of topological photonics in an actual device are topological lasers, where efficient and highly coherent lasing from a topologically non-trivial mode is ach… ▽ More With a seminal work of Raghu and Haldane in 2008, concepts of topology have been successfully introduced in a wide range of optical systems, emulating specific lattice Hamiltonians. Certainly, one of the most promising routes to an application of topological photonics in an actual device are topological lasers, where efficient and highly coherent lasing from a topologically non-trivial mode is achieved. While some attempts have been made to excite such structures electrically, the majority of published fundamental experiments use a form of laser excitation. In this paper, we use a lattice of vertical resonator polariton micropillars to form an exponentially localized topological Su-Schrieffer-Heeger defect. Upon electrical excitation of the p-i-n doped structure, the system unequivocally shows polariton lasing from the topological defect using a carefully placed gold contact. Despite the presence of do** and electrical contacts, the polariton band structure clearly preserves its topological properties. At high excitation power the Mott density is exceeded leading to highly efficient lasing in the weak coupling regime. This work is an important step towards applied topological lasers using vertical resonator microcavity structures. △ Less

Submitted 1 February, 2024; originally announced February 2024.

Comments: 21 pages, 7 figures

Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range

Authors: Paweł Wyborski, Michał Gawełczyk, Paweł Podemski, Piotr Andrzej Wroński, Mirosława Pawlyta, Sandeep Gorantla, Fauzia Jabeen, Sven Höfling, Grzegorz Sęk

Abstract: Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modifica… ▽ More Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modification of other quantum dot properties. Knowledge of these effects is crucial for actual implementations of QD-based non-classical light sources for quantum communication schemes. Here, we thoroughly study single GaAs-based quantum dots grown by molecular-beam epitaxy on specially designed, digital-alloy InGaAs metamorphic buffers. With a set of structures varying in the buffer indium content and providing quantum dot emission through the telecom spectral range up to 1.6 $μ$m, we analyze the impact of the buffer and its composition on QD structural and optical properties. We identify the mechanisms of quantum dot emission shift with varying buffer composition. We also look into the charge trap** processes and compare excitonic properties for different growth conditions with single-dot emission successfully shifted to both, the second and the third telecom windows. △ Less

Submitted 26 November, 2023; v1 submitted 29 April, 2023; originally announced May 2023.

Comments: 20 pages, 9 figures

Journal ref: Phys. Rev. Applied 20, 044009 (2023)

Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells

Authors: M. Meyer, S. Schmid, F. Jabeen, G. Bastard, F. Hartmann, S. Höfling

Abstract: We study the evolution of the quantum scattering time by gate voltage training in the topological insulator based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal gate voltage applied during a gate voltage sweep cycle, the quantum scattering time can be improved by 50 % from 0.08 ps to 0.12 ps albeit the transport scattering time is rather constant around 1.0 ps. The ratio of the… ▽ More We study the evolution of the quantum scattering time by gate voltage training in the topological insulator based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal gate voltage applied during a gate voltage sweep cycle, the quantum scattering time can be improved by 50 % from 0.08 ps to 0.12 ps albeit the transport scattering time is rather constant around 1.0 ps. The ratio of the quantum scattering time versus transport scattering time scales linearly with the charge carrier density and varies from 10 to 30, indicating Coulombic scattering as the dominant scattering mechanism. Our findings may enable to improve the residual bulk conductivity issue and help in observing helical edge channels in topological insulators based on InAs/GaSb quantum well heterostructures even for macroscopic devices. △ Less

Submitted 10 May, 2022; originally announced May 2022.

Grating-based microcavity with independent control of resonance energy and linewidth for non-Hermitian polariton system

Authors: Jiaqi Hu, Nathanial Lydick, Zhaorong Wang, Fauzia Jabeen, Christian Schneider, Sven Höfling, Hui Deng

Abstract: Exciton-polaritons have become an emerging platform for implementing non-Hermitian physics. The implementation commonly requires control of both the real and imaginary parts of the eigenmodes of the system. We present an experimental method to achieve this purpose using microcavities with sub-wavelength gratings as reflectors. The reflectivity and reflection phase of the grating can be changed by… ▽ More Exciton-polaritons have become an emerging platform for implementing non-Hermitian physics. The implementation commonly requires control of both the real and imaginary parts of the eigenmodes of the system. We present an experimental method to achieve this purpose using microcavities with sub-wavelength gratings as reflectors. The reflectivity and reflection phase of the grating can be changed by its geometric parameters and they determine the energy and linewidth of the polariton modes. We demonstrate that this method allows a wide range of possible polariton energy and linewidth, suitable for implementing non-Hermitian polariton systems with coupled modes. △ Less

Submitted 23 August, 2022; v1 submitted 16 March, 2022; originally announced March 2022.

Journal ref: Appl. Phys. Lett. 121, 081106 (2022)

Anderson localisation in steady states of microcavity polaritons

Authors: Thomas J. Sturges, Mitchell D. Anderson, Adam Buraczewski, Morteza Navadeh-Toupchi, Albert F. Adiyatullin, Fauzia Jabeen, Daniel Y. Oberli, Marcia T. Portella-Oberli, Magdalena Stobińska

Abstract: We present an experimental signature of the Anderson localisation of microcavity polaritons, and provide a systematic study of the dependence on disorder strength. We reveal a controllable degree of localisation, as characterised by the inverse-participation ratio, by tuning the positional disorder of arrays of interacting mesas. This constitutes the realisation of disorder-induced localisation in… ▽ More We present an experimental signature of the Anderson localisation of microcavity polaritons, and provide a systematic study of the dependence on disorder strength. We reveal a controllable degree of localisation, as characterised by the inverse-participation ratio, by tuning the positional disorder of arrays of interacting mesas. This constitutes the realisation of disorder-induced localisation in a driven-dissipative system. In addition to being an ideal candidate for investigating localisation in this regime, microcavity polaritons hold promise for low-power, ultra-small devices and their localisation could be used as a resource in quantum memory and quantum information processing. △ Less

Submitted 21 November, 2019; v1 submitted 22 March, 2019; originally announced March 2019.

Comments: 7 pages, 3 figures

Journal ref: Sci Rep 9, 19396 (2019)

Periodic squeezing in a polariton Josephson junction

Authors: Albert F. Adiyatullin, Mitchell D. Anderson, Hugo Flayac, Marcia T. Portella-Oberli, Fauzia Jabeen, Clauderic Ouellet-Plamondon, Gregory C. Sallen, Benoit Deveaud

Abstract: The use of a Kerr nonlinearity to generate squeezed light is a well-known way to surpass the quantum noise limit along a given field quadrature. Nevertheless, in the most common regime of weak nonlinearity, a single Kerr resonator is unable to provide the proper interrelation between the field amplitude and squeezing required to induce a sizable deviation from Poissonian statistics. We demonstrate… ▽ More The use of a Kerr nonlinearity to generate squeezed light is a well-known way to surpass the quantum noise limit along a given field quadrature. Nevertheless, in the most common regime of weak nonlinearity, a single Kerr resonator is unable to provide the proper interrelation between the field amplitude and squeezing required to induce a sizable deviation from Poissonian statistics. We demonstrate experimentally that weakly coupled bosonic modes allow exploration of the interplay between squeezing and displacement, which can give rise to strong deviations from the Poissonian statistics. In particular, we report on the periodic bunching in a Josephson junction formed by two coupled exciton-polariton modes. Quantum modeling traces the bunching back to the presence of quadrature squeezing. Our results, linking the light statistics to squeezing, are a precursor to the study of nonclassical features in semiconductor microcavities and other weakly nonlinear bosonic systems. △ Less

Submitted 10 November, 2017; v1 submitted 20 December, 2016; originally announced December 2016.

Comments: 6 pages, 4 figures

Journal ref: Nature Commun. 8, 1329 (2017)

Electrical transport in C-doped GaAs nanowires: surface effects

Authors: Alberto Casadei, Jil Schwender, Eleonora Russo-Averchi, Daniel Rüffer, Martin Heiss, Esther Alarcó-Lladó, Fauzia Jabeen, Mohammad Ramezani, Kornelius Nielsch, Anna Fontcuberta I Morral

Abstract: The resistivity and the mobility of Carbon doped GaAs nanowires have been studied for different do** concentrations. Surface effects have been evaluated by comparing upassivated with passivated nanowires. We directly see the influence of the surface: the pinning of the Fermi level and the consequent existence of a depletion region lead to an increase of the mobility up to 30 cm^2/(V*s) for dopin… ▽ More The resistivity and the mobility of Carbon doped GaAs nanowires have been studied for different do** concentrations. Surface effects have been evaluated by comparing upassivated with passivated nanowires. We directly see the influence of the surface: the pinning of the Fermi level and the consequent existence of a depletion region lead to an increase of the mobility up to 30 cm^2/(V*s) for do** concentrations lower than 3*10^18 cm^-3. Electron beam induced current measurements show that the minority carrier diffusion path can be as high as 190 nm for passivated nanowires. △ Less

Submitted 22 April, 2013; originally announced April 2013.

The Mn site in Mn-doped Ga-As nanowires: an EXAFS study

Authors: F. d'Acapito, M. Rovezzi, F. Boscherini, F. Jabeen, G. Bais, M. Piccin, S. Rubini, F. Martelli

Abstract: We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn do** has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly… ▽ More We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn do** has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched Mn-As coordination we have found the presence of Mn in a Mn-Au intermetallic compound. △ Less

Submitted 13 June, 2012; originally announced June 2012.

Comments: This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher-authenticated version is available online at doi:10.1088/0268-1242/27/8/085001

Journal ref: Semicond. Sci. Technol. 27 (2012) 085001

Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

Authors: Damien Lucot, Fauzia Jabeen, Jean-Christophe Harmand, Gilles Patriarche, Romain Giraud, Giancarlo Faini, Dominique Mailly

Abstract: We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe set-up using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-ohmic behavior with temperature and voltage-bias… ▽ More We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe set-up using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-ohmic behavior with temperature and voltage-bias dependences following power laws, as expected for a quasi-1D system. △ Less

Submitted 2 January, 2011; originally announced January 2011.