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A momentum-space theory for topological magnons in 2D ferromagnetic skyrmion lattices
Authors:
Doried Ghader,
Bilal Jabakhanji
Abstract:
Magnon dynamics in skyrmion lattices have garnered significant interest due to their potential applications in topological magnonics. Existing theories often follow a single-momentum approach, assuming significant Dzyaloshinskii-Moriya Interaction (DMI) to minimize the skyrmion's dimensions, which can lead to oversimplification in describing magnon behavior. This study introduces a multi-momentum…
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Magnon dynamics in skyrmion lattices have garnered significant interest due to their potential applications in topological magnonics. Existing theories often follow a single-momentum approach, assuming significant Dzyaloshinskii-Moriya Interaction (DMI) to minimize the skyrmion's dimensions, which can lead to oversimplification in describing magnon behavior. This study introduces a multi-momentum operator theory for magnons in large 2D skyrmions, where each skyrmion encompasses several thousand spins. The proposed theory fully transforms the magnon Hamiltonian into momentum space, incorporating off-diagonal terms to capture umklapp scattering caused by the skyrmion wave vectors. Our results reveal deviations from single-momentum theories, demonstrating that flat bands are not universal features of the skyrmionic magnon spectrum. Additionally, we find that manipulating the skyrmion size with an external magnetic field induces multiple topological phase transitions. At high magnetic fields, the low-energy magnon spectrum becomes densely packed and entirely topological, resembling a topological band continuum.
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Submitted 30 April, 2024;
originally announced May 2024.
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Designing layered 2D skyrmion lattices in moiré magnetic hetero-structures
Authors:
Bilal Jabakhanji,
Doried Ghader
Abstract:
Skyrmions are promising for the next generation of spintronic and magnonic devices, but their zero-field stability and controlled nucleation through chiral interactions remain challenging. In this theoretical study, we explore the potential of moiré magnetic heterostructures to generate ordered skyrmion lattices from the stacking-dependent magnetism in 2D magnets. We consider heterostructures form…
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Skyrmions are promising for the next generation of spintronic and magnonic devices, but their zero-field stability and controlled nucleation through chiral interactions remain challenging. In this theoretical study, we explore the potential of moiré magnetic heterostructures to generate ordered skyrmion lattices from the stacking-dependent magnetism in 2D magnets. We consider heterostructures formed by twisting ultrathin CrBr_3 films on top of CrI_3 substrates, assuming a moderate interfacial Dzyaloshinskii-Moriya interaction. At large moiré periodicity and appropriate substrate thickness, a moiré skyrmion lattice emerges in the interfacial CrBr_3 layer due to the weaker exchange interactions in CrBr_3 compared to CrI_3. This lattice is then projected to the remaining layers of the CrBr_3 film via emergent chiral interlayer fields. By varying the pristine stacking configurations within the ultrathin CrBr_3 film, we realize layered ferromagnetic and antiferromagnetic skyrmion lattices without the need for a permanent magnetic field. Our findings suggest the possibility of creating colorful skyrmion lattices in moiré magnetic heterostructures, enabling further exploration of their fundamental properties and technological relevance.
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Submitted 8 June, 2023; v1 submitted 2 February, 2023;
originally announced February 2023.
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Whirling interlayer fields as a source of stable topological order in moiré CrI3
Authors:
Doried Ghader,
Bilal Jabakhanji,
Alessandro Stroppa
Abstract:
The moiré engineering of two-dimensional magnets opens unprecedented opportunities to design novel magnetic states with promises for spintronic device applications. The possibility of stabilizing skyrmions in these materials without chiral spin-orbit couplings or dipolar interactions is yet to be explored. Here, we investigate the formation and control of ground state topological spin textures (TS…
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The moiré engineering of two-dimensional magnets opens unprecedented opportunities to design novel magnetic states with promises for spintronic device applications. The possibility of stabilizing skyrmions in these materials without chiral spin-orbit couplings or dipolar interactions is yet to be explored. Here, we investigate the formation and control of ground state topological spin textures (TSTs) in moiré CrI3 using stochastic Landau-Lifshitz-Gilbert simulations. We unveil the emergence of interlayer vortex and antivortex Heisenberg exchange fields, stabilizing spontaneous and field-assisted ground state TSTs with various topologies. The developed study accounts for the full bilayer spin dynamics, thermal fluctuations, and intrinsic spin-orbit couplings. By examining the effect of the Kitaev interaction and the next nearest-neighbor Dzyaloshinskii-Moriya interaction, we propose the latter as the unique spin-orbit coupling mechanism compatible with experiments on monolayer and twisted CrI3. Our findings contribute to the current knowledge about moiré skyrmionics and uncover the nature of spin-orbit coupling in CrI3.
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Submitted 2 August, 2022; v1 submitted 12 November, 2021;
originally announced November 2021.
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Magnetic-field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point
Authors:
A. Nachawaty,
M. Yang,
W. Desrat,
S. Nanot,
B. Jabakhanji,
D. Kazazis,
R. Yakimova,
A. Cresti,
W. Escoffier,
B. Jouault
Abstract:
We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the temperature dependence of the Hall coefficient down to liquid helium temperature; iii) by fitting the magnetoresistances at low temperature. All methods converge to…
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We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the temperature dependence of the Hall coefficient down to liquid helium temperature; iii) by fitting the magnetoresistances at low temperature. All methods converge to give a disorder amplitude of $(20 \pm 10)$ meV. Because of this relatively low disorder, close to the CNP, at low temperature, the sample resistivity does not exhibit the standard value $\simeq h/4e^2$ but diverges. Moreover, the magnetoresistance curves have a unique ambipolar behavior, which has been systematically observed for all studied samples. This is a signature of both asymmetry in the density of states and in-plane charge transfer. The microscopic origin of this behavior cannot be unambiguously determined. However, we propose a model in which the SiC substrate steps qualitatively explain the ambipolar behavior.
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Submitted 23 August, 2017;
originally announced August 2017.
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Magnetoresistance of disordered graphene: from low to high temperatures
Authors:
B. Jabakhanji,
D. Kazazis,
W. Desrat,
A. Michon,
M. Portail,
B. Jouault
Abstract:
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature. The MR exhibits a maximum in the temperature range $120-240$ K. The maximum is observed at intermediate magnetic fields ($B=2-6$ T), in between the weak localiz…
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We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature. The MR exhibits a maximum in the temperature range $120-240$ K. The maximum is observed at intermediate magnetic fields ($B=2-6$ T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low field magnetoresistance increases continuously with $T$ and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long and short range disorder in these samples.
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Submitted 24 June, 2014;
originally announced June 2014.
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Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?
Authors:
B. Jouault,
N. Camara,
B. Jabakhanji,
A. Caboni,
C. Consejo,
P. Godignon,
D. K. Maude,
J. Camassel
Abstract:
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm below the surface, and works well at intermediate temperatures: 40K-80K. The Dirac point is observed at moderate gate voltages (1-20V) depending upon the…
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We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm below the surface, and works well at intermediate temperatures: 40K-80K. The Dirac point is observed at moderate gate voltages (1-20V) depending upon the surface preparation. For temperatures below 40K, the gate is inefficient as the buried channel is frozen out. However, the carrier concentration in graphene remains very close to the value set at T\sim 40K. The absence of parallel conduction is evidenced by the observation of the half-integer quantum Hall effect at various concentrations at T\sim 4K. These observations pave the way to a better understanding of intrinsic properties of epitaxial graphene and are promising for applications such as quantum metrology.
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Submitted 13 July, 2011; v1 submitted 29 June, 2011;
originally announced June 2011.
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Interplay between interferences and electron-electron interactions in epitaxial graphene
Authors:
B. Jouault,
B. Jabakhanji,
N. Camara,
W. Desrat,
C. Consejo,
J. Camassel
Abstract:
We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic fields, after elimination of a geometric magnetoresistance and subtraction of the magnetic field dependent Drude conductivity. The electron electron interaction…
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We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic fields, after elimination of a geometric magnetoresistance and subtraction of the magnetic field dependent Drude conductivity. The electron electron interaction correction is extracted at higher magnetic fields, where localization effects disappear. Both phenomena are weak but sizable and of the same order of magnitude. If compared to graphene on silicon dioxide, electron electron interaction on epitaxial graphene are not significantly reduced by the larger dielectric constant of the SiC substrate.
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Submitted 28 April, 2011; v1 submitted 7 April, 2011;
originally announced April 2011.
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Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices
Authors:
N. Camara,
B. Jouault,
A. Caboni,
B. Jabakhanji,
W. Desrat,
E. Pausas,
C. Consejo,
N. Mestres,
P. Godignon,
J. Camassel
Abstract:
Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. We find a moderate p-type do**, high carrier…
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Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. We find a moderate p-type do**, high carrier mobility and half integer Quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today's SiC industry.
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Submitted 18 July, 2010;
originally announced July 2010.
