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Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon
Authors:
Steve M. Young,
Aaron M. Katzenmeyer,
Evan M. Anderson,
Ting S. Luk,
Jeffrey A. Ivie,
Scott W. Schmucker,
Xujiao Gao,
Shashank Misra
Abstract:
The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$δ$-layers - atomically thin sheets of phosphorus dopants in silicon that induce novel electronic properties beyond traditional do**. Previously it was shown that P:$δ$-layers pro…
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The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$δ$-layers - atomically thin sheets of phosphorus dopants in silicon that induce novel electronic properties beyond traditional do**. Previously it was shown that P:$δ$-layers produce a distinct Drude tail feature in ellipsometry measurements. However, the ellipsometric spectra could not be properly fit by modeling the $δ$-layer as discrete layer of classical Drude metal. In particular, even for large broadening corresponding to extremely short relaxation times, a plasma resonance feature was anticipated but not evident in the experimental data. In this work, we develop a physically accurate description of this system, which reveals a general approach to designing thin films with intentionally suppressed plasma resonances. Our model takes into account the strong charge density confinement and resulting quantum mechanical description of a P:$δ$-layer. We show that the absence of a plasma resonance feature results from a combination of two factors: i), the sharply varying charge density profile due to strong confinement in the direction of growth; and ii), the effective mass and relaxation time anisotropy due to valley degeneracy. The plasma resonance reappears when the atoms composing the $δ$-layer are allowed to diffuse out from the plane of the layer, destroying its well-confined two-dimensional character that is critical to its novel electronic properties.
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Submitted 7 March, 2023; v1 submitted 19 October, 2022;
originally announced October 2022.
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Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing
Authors:
Quinn Campbell,
Justine C. Koepke,
Jeffrey A. Ivie,
Andrew M. Mounce,
Daniel R. Ward,
Malcolm S. Carroll,
Shashank Misra,
Andrew D. Baczewski,
Ezra Bussmann
Abstract:
Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P…
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Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P incorporation as the size of such a window is increased. We augment a kinetic model for PH$_3$ dissociation leading to P incorporation on Si(100)-2$\times$1 to include barriers for reactions across distinct dimer rows. Using this model, we demonstrate that even for a window consisting of 2$\times$3 silicon dimers, the probability that at least one donor incorporates is nearly unity. We also examine the impact of size of the lithographic window, finding that the incorporation fraction saturates to $δ$-layer like coverage as the circumference-to-area ratio approaches zero. We predict that this incorporation fraction depends strongly on the dosage of the precursor, and that the standard deviation of the number of incorporations scales as $\sim \sqrt{n}$, as would be expected for a series of largely independent incorporation events. Finally, we characterize an array of experimentally prepared multi-donor lithographic windows and use our kinetic model to study variability due to the observed lithographic roughness, predicting a negligible impact on incorporation statistics. We find good agreement between our model and the inferred incorporation in these windows from scanning tunneling microscope measurements, indicating the robustness of atomic-precision advanced manufacturing to errors in patterning for multi-donor patches.
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Submitted 21 July, 2022;
originally announced July 2022.
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Accelerated Lifetime Testing and Analysis of Delta-doped Silicon Test Structures
Authors:
Connor Halsey,
Jessica Depoy,
DeAnna M. Campbell,
Daniel R. Ward,
Evan M. Anderson,
Scott W. Schmucker,
Jeffrey A. Ivie,
Xujiao Gao,
David A. Scrymgeour,
Shashank Misra
Abstract:
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped phosphorus layers with atomic precision has implications for the future of digital electronics. This work establishes the accelerated lifetime tests of s…
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As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped phosphorus layers with atomic precision has implications for the future of digital electronics. This work establishes the accelerated lifetime tests of such doped layers, showing that these materials survive high current (>3.0 MA/cm2) and 300$^{\circ}$C for greater than 70 days and are still electrically conductive. The doped layers compare well to failures in traditional metal layers like aluminum and copper where mean time to failure at these temperatures and current densities would occur within hours. It also establishes that these materials are more stable than metal features, paving the way toward their integration with operational CMOS.
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Submitted 24 February, 2022; v1 submitted 22 October, 2021;
originally announced October 2021.
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The impact of stochastic incorporation on atomic-precision Si:P arrays
Authors:
Jeffrey A. Ivie,
Quinn Campbell,
Justin C. Koepke,
Mitchell I. Brickson,
Peter A. Schultz,
Richard P. Muller,
Andrew M. Mounce,
Daniel R. Ward,
Malcom S. Carroll,
Ezra Bussmann,
Andrew D. Baczewski,
Shashank Misra
Abstract:
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorpor…
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Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63 \pm 10\%$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate.
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Submitted 25 May, 2021;
originally announced May 2021.
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Correlated Energy-Level Alignment Effects Determine Substituent-Tuned Single-Molecule Conductance
Authors:
Jeffrey A. Ivie,
Nathan D. Bamberger,
Keshaba N. Parida,
Stuart Shepard,
Dylan Dyer,
Aldilene Saraiva-Souza,
Roland Himmelhuber,
Dominic V. McGrath,
Manuel Smeu,
Oliver L. A. Monti
Abstract:
The rational design of single molecule electrical components requires a deep and predictive understanding of structure-function relationships. Here we explore the relationship between chemical substituents and the conductance of metal-single molecule-metal junctions, using functionalized oligophenylenevinylenes as a model system. Using a combination of mechanically controlled break-junction experi…
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The rational design of single molecule electrical components requires a deep and predictive understanding of structure-function relationships. Here we explore the relationship between chemical substituents and the conductance of metal-single molecule-metal junctions, using functionalized oligophenylenevinylenes as a model system. Using a combination of mechanically controlled break-junction experiments and various levels of theory including non-equilibrium Green's functions, we demonstrate that the connection between gas-phase molecular electronic structure and in-junction molecular conductance is complicated by the involvement of multiple mutually correlated and opposing effects that contribute to energy level alignment in the junction. We propose that these opposing correlations represent powerful new "design principles," because their physical origins make them broadly applicable, and they are capable of predicting the direction and relative magnitude of observed conductance trends. In particular, we show that they are consistent with the observed conductance variability not just within our own experimental results, but also within disparate molecular series reported in literature and, crucially, with the trend in variability across these molecular series, which previous simple models fail to explain. The design principles introduced here can therefore aid in both screening and suggesting novel design strategies for maximizing conductance tunability in single-molecule systems.
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Submitted 16 October, 2020;
originally announced October 2020.
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A model for atomic precision p-type do** with diborane on Si(100)-2$\times$1
Authors:
Quinn Campbell,
Jeffrey A. Ivie,
Ezra Bussmann,
Scott W. Schmucker,
Andrew D. Baczewki,
Shashank Misra
Abstract:
Diborane (B$_2$H$_6$) is a promising molecular precursor for atomic precision p-type do** of silicon that has recently been experimentally demonstrated [T. {Š}kere{ň}, \textit{et al.,} Nature Electronics (2020)]. We use density functional theory (DFT) calculations to determine the reaction pathway for diborane dissociating into a species that will incorporate as electrically active substitutiona…
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Diborane (B$_2$H$_6$) is a promising molecular precursor for atomic precision p-type do** of silicon that has recently been experimentally demonstrated [T. {Š}kere{ň}, \textit{et al.,} Nature Electronics (2020)]. We use density functional theory (DFT) calculations to determine the reaction pathway for diborane dissociating into a species that will incorporate as electrically active substitutional boron after adsorbing onto the Si(100)-2$\times$1 surface. Our calculations indicate that diborane must overcome an energy barrier to adsorb, explaining the experimentally observed low sticking coefficient ($< 10^{-4}$ at room temperature) and suggesting that heating can be used to increase the adsorption rate. Upon sticking, diborane has an $\sim 50\%$ chance of splitting into two BH$_3$ fragments versus merely losing hydrogen to form a dimer such as B$_2$H$_4$. As boron dimers are likely electrically inactive, whether this latter reaction occurs is shown to be predictive of the incorporation rate. The dissociation process proceeds with significant energy barriers, necessitating the use of high temperatures for incorporation. Using the barriers calculated from DFT, we parameterize a Kinetic Monte Carlo model that predicts the incorporation statistics of boron as a function of the initial depassivation geometry, dose, and anneal temperature. Our results suggest that the dimer nature of diborane inherently limits its do** density as an acceptor precursor, and furthermore that heating the boron dimers to split before exposure to silicon can lead to poor selectivity on hydrogen and halogen resists. This suggests that while diborane works as an atomic precision acceptor precursor, other non-dimerized acceptor precursors may lead to higher incorporation rates at lower temperatures.
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Submitted 30 September, 2020;
originally announced October 2020.
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Unsupervised Segmentation-Based Machine Learning as an Advanced Analysis Tool for Single Molecule Break Junction Data
Authors:
Nathan D. Bamberger,
Jeffrey A. Ivie,
Keshaba N. Parida,
Dominic V. McGrath,
Oliver L. A. Monti
Abstract:
Improved understanding of charge-transport in single molecules is essential for harnessing the potential of molecules e.g. as circuit components at the ultimate size limit. However, interpretation and analysis of the large, stochastic datasets produced by most quantum transport experiments remains an ongoing challenge to discovering much-needed structure-property relationships. Here, we introduce…
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Improved understanding of charge-transport in single molecules is essential for harnessing the potential of molecules e.g. as circuit components at the ultimate size limit. However, interpretation and analysis of the large, stochastic datasets produced by most quantum transport experiments remains an ongoing challenge to discovering much-needed structure-property relationships. Here, we introduce Segment Clustering, a novel unsupervised hypothesis generation tool for investigating single molecule break junction distance-conductance traces. In contrast to previous machine learning approaches for single molecule data, Segment Clustering identifies grou**s of similar pieces of traces instead of entire traces. This offers a new and advantageous perspective into dataset structure because it facilitates the identification of meaningful local trace behaviors that may otherwise be obscured by random fluctuations over longer distance scales. We illustrate the power and broad applicability of this approach with two case studies that address common challenges encountered in single molecule studies: First, Segment Clustering is used to extract primary molecular features from a varying background to increase the precision and robustness of conductance measurements, enabling small changes in conductance in response to molecular design to be identified with confidence. Second, Segment Clustering is applied to a known data mixture to qualitatively separate distinct molecular features in a rigorous and unbiased manner. These examples demonstrate two powerful ways in which Segment Clustering can aid in the development of structure-property relationships in molecular quantum transport, an outstanding challenge in the field of molecular electronics.
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Submitted 3 July, 2020; v1 submitted 22 April, 2020;
originally announced April 2020.
