Showing 1–45 of 45 results for author: Iversen, B B

Oxide layer formation prevents deteriorating ion migration in thermoelectric Cu$_2$Se during operation in air

Authors: Rasmus S. Christensen, Peter S. Thorup, Lasse R. Jørgensen, Martin Roelsgaard, Karl F. F. Fischer, Ann-Christin Dippel, Bo Brummerstedt Iversen

Abstract: Cu$_2$Se is a mixed ionic-electronic conductor with outstanding thermoelectric performance originally envisioned for space missions. Applications were discontinued due to material instability, where elemental Cu grows at the electrode interfaces during operation in vacuum. Here, we show that when Cu$_2$Se is operating in air, formation of an oxide surface layer suppresses Cu$^+$ migration along th… ▽ More Cu$_2$Se is a mixed ionic-electronic conductor with outstanding thermoelectric performance originally envisioned for space missions. Applications were discontinued due to material instability, where elemental Cu grows at the electrode interfaces during operation in vacuum. Here, we show that when Cu$_2$Se is operating in air, formation of an oxide surface layer suppresses Cu$^+$ migration along the current direction. In operando X-ray scattering and electrical resistivity measurements quantify Cu$^+$ migration through refinement of atomic occupancies and phase composition analysis. Cu deposition can be prevented during operation in air, irrespective of a critical voltage, if the thermal gradient is applied along the current direction. Maximum entropy electron density analysis provides experimental evidence that Cu$^+$ migration pathways under thermal and electrical gradients differ substantially from equilibrium diffusion. The study establishes new promise for inexpensive sustainable Cu$_2$Se in thermoelectric applications, and it underscores the importance of atomistic insight into materials during thermoelectric operating conditions. △ Less

Submitted 7 August, 2023; originally announced August 2023.

Machine learning based approach for solving atomic structures of nanomaterials combining pair distribution functions with density functional theory

Authors: Magnus Kløve, Sanna Sommer, Bo B. Iversen, Bjørk Hammer, Wilke Dononelli

Abstract: Determination of crystal structures of nanocrystalline or amorphous compounds is a great challenge in solid states chemistry and physics. Pair distribution function (PDF) analysis of X-Ray or neutron total scattering data has proven to be a key element in tackling this challenge. However, in most cases a reliable structural motif is needed as starting configuration for structure refinements. Here,… ▽ More Determination of crystal structures of nanocrystalline or amorphous compounds is a great challenge in solid states chemistry and physics. Pair distribution function (PDF) analysis of X-Ray or neutron total scattering data has proven to be a key element in tackling this challenge. However, in most cases a reliable structural motif is needed as starting configuration for structure refinements. Here, we present an algorithm that is able to determine the crystal structure of an unknown compound by means of an on-the-fly trained machine learning model that combines density functional theory (DFT) calculations with comparison of calculated and measured PDFs for global optimization in an artificial landscape. Due to the nature of this landscape, even metastable configurations can be determined. △ Less

Submitted 14 September, 2022; v1 submitted 3 September, 2022; originally announced September 2022.

Direct visualization of magnetic correlations in frustrated spinel ZnFe$_2$O$_4$

Authors: Jonas Ruby Sandemann, Thomas Bjørn Egede Grønbech, Kristoffer Andreas Holm Støckler, Feng Ye, Bryan C. Chakoumakos, Bo Brummerstedt Iversen

Abstract: Magnetic materials with the spinel structure (A$^{2+}$B$^{3+}_2$O$^4$) form the core of numerous magnetic devices, but ZnFe$_2$O$_4$ constitutes a peculiar example where the nature of the magnetism is still unresolved. Susceptibility measurements revealed a cusp around $T_c=13\;\mathrm{K}$ resembling an antiferromagnetic transition, despite the positive Curie-Weiss temperature determined to be… ▽ More Magnetic materials with the spinel structure (A$^{2+}$B$^{3+}_2$O$^4$) form the core of numerous magnetic devices, but ZnFe$_2$O$_4$ constitutes a peculiar example where the nature of the magnetism is still unresolved. Susceptibility measurements revealed a cusp around $T_c=13\;\mathrm{K}$ resembling an antiferromagnetic transition, despite the positive Curie-Weiss temperature determined to be $Θ_{CW}=102.8(1)\;\mathrm{K}$. Bifurcation of field-cooled and zero-field-cooled data below $T_c$ in conjunction with a frequency dependence of the peak position and a non-zero imaginary component below $T_c$ shows it is in fact associated with a spin-glass transition. Highly structured magnetic diffuse neutron scattering from single crystals develops between $50\;\mathrm{K}$ and $25\;\mathrm{K}$ revealing the presence of magnetic disorder which is correlated in nature. Here, the 3D-m$Δ$PDF method is used to visualize the local magnetic ordering preferences, and ferromagnetic nearest-neighbor and antiferromagnetic third nearest-neighbor correlations are shown to be dominant. Their temperature dependence is extraordinary with some flip** in sign, and a strongly varying correlation length. The correlations can be explained by orbital interaction mechanisms for the magnetic pathways, and a preferred spin cluster. Our study demonstrates the power of the 3D-m$Δ$PDF method in visualizing complex quantum phenomena thereby providing a way to obtain an atomic scale understanding of magnetic frustration. △ Less

Submitted 2 August, 2022; originally announced August 2022.

Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation

Authors: Peter Skjøtt Thorup, Christian Moeslund Zeuthen, Kasper Borup, Bo Brummerstedt Iversen

Abstract: The mixed ionic-electronic conductor $β$-Zn$_4$Sb$_3$ is a cheap and high performing thermoelectric material, but under operating conditions with a temperature gradient and a running current, the material decomposes as Zn readily migrates in the structure. Here, we report an improved stability of $β$-Zn$_4$Sb$_3$ by introducing ion-blocking interfaces of stainless steel to segment the sample, prod… ▽ More The mixed ionic-electronic conductor $β$-Zn$_4$Sb$_3$ is a cheap and high performing thermoelectric material, but under operating conditions with a temperature gradient and a running current, the material decomposes as Zn readily migrates in the structure. Here, we report an improved stability of $β$-Zn$_4$Sb$_3$ by introducing ion-blocking interfaces of stainless steel to segment the sample, produced by a rapid one-step Spark Plasma Sintering synthesis. The stability of the samples is tested under temperature gradients and electric currents, which reveals significantly improved stability of the segmented samples compared to unsegmented samples. The segmented samples are stable under temperature gradient from 250°C to room temperature with no external current, whereas the unsegmented sample decomposes into ZnSb and Zn under the same conditions. The thermoelectric figure of merit, zT, of the segmented sample is slightly reduced, mainly due to the increased thermal conductivity. In conclusion, a rapid one-step synthesis of segmented $β$-Zn$_4$Sb$_3$ is developed, which successfully improves the long-term operational stability by blocking the Zn ion migration. △ Less

Submitted 21 March, 2022; originally announced March 2022.

Effects of Voigt Diffraction Peak Profiles on the Pair Distribution Function

Authors: Jonas Beyer, Nikolaj Roth, Bo Brummerstedt Iversen

Abstract: Powder X-ray Diffraction (PXRD) and Pair Distribution Function (PDF) analysis are well-established techniques for investigation of atomic configurations in crystalline materials, and the two are related by a Fourier transformation. In PXRD experiments, structural information, such as crystallite size and strain, is contained within the peak profile function of the diffraction peaks. However, the e… ▽ More Powder X-ray Diffraction (PXRD) and Pair Distribution Function (PDF) analysis are well-established techniques for investigation of atomic configurations in crystalline materials, and the two are related by a Fourier transformation. In PXRD experiments, structural information, such as crystallite size and strain, is contained within the peak profile function of the diffraction peaks. However, the effects of the PXRD peak profile function on the PDF are not fully understood. Here, all the effects from a Voigt diffraction peak profile are solved analytically and verified experimentally through a high-quality X-ray total scattering measurements on strained Ni powder. The Lorentzian contribution to strain broadening is found to result in Voigt shaped PDF peaks. Furthermore, it is demonstrated that an improper description of the Voigt shape during model refinement leads to overestimation of the atomic displacement parameter. △ Less

Submitted 15 June, 2021; originally announced June 2021.

Optical manipulation of Rashba-split 2-Dimensional Electron Gas

Authors: M. Michiardi, F. Boschini, H. -H. Kung, M. X. Na, S. K. Y. Dufresne, A. Currie, G. Levy, S. Zhdanovich, A. K. Mills, D. J. Jones, J. L. Mi, B. B. Iversen, Ph. Hofmann, A. Damascelli

Abstract: In spintronic devices, the two main approaches to actively control the electrons' spin degree of freedom involve either static magnetic or electric fields. An alternative avenue relies on the application of optical fields to generate spin currents, which promises to bolster spin-device performance allowing for significantly faster and more efficient spin logic. To date, research has mainly focused… ▽ More In spintronic devices, the two main approaches to actively control the electrons' spin degree of freedom involve either static magnetic or electric fields. An alternative avenue relies on the application of optical fields to generate spin currents, which promises to bolster spin-device performance allowing for significantly faster and more efficient spin logic. To date, research has mainly focused on the optical injection of spin currents through the photogalvanic effect, and little is known about the direct optical control of the intrinsic spin splitting. Here, to explore the all-optical manipulation of a material's spin properties, we consider the Rashba effect at a semiconductor interface. The Rashba effect has long been a staple in the field of spintronics owing to its superior tunability, which allows the observation of fully spin-dependent phenomena, such as the spin-Hall effect, spin-charge conversion, and spin-torque in semiconductor devices. In this work, by means of time and angle-resolved photoemission spectroscopy (TR-ARPES), we demonstrate that an ultrafast optical excitation can be used to manipulate the Rashba-induced spin splitting of a two-dimensional electron gas (2DEG) engineered at the surface of the topological insulator Bi$_{2}$Se$_{3}$. We establish that light-induced photovoltage and charge carrier redistribution -- which in concert modulate the spin-orbit coupling strength on a sub-picosecond timescale -- can offer an unprecedented platform for achieving all optically-driven THz spin logic devices. △ Less

Submitted 2 June, 2022; v1 submitted 19 May, 2021; originally announced May 2021.

Journal ref: Nature Communications 13, 3096 (2022)

On single crystal total scattering data reduction and correction protocols for analysis in direct space

Authors: Robert J. Koch, Nikolaj Roth, Yiu Liu, Oleh Ivashko, Ann-Christin Dippel, Cedomir Petrovic, Bo B. Iversen, Martin v. Zimmermann, Emil S. Bozin

Abstract: We explore data reduction and correction steps and processed data reproducibility in the emerging single crystal total scattering based technique of three-dimensional differential atomic pair distribution function (3D-$Δ$PDF) analysis. All steps from sample measurement to data-processing are outlined in detail using a CuIr$_2$S$_4$ example crystal studied in a setup equipped with a high-energy x-r… ▽ More We explore data reduction and correction steps and processed data reproducibility in the emerging single crystal total scattering based technique of three-dimensional differential atomic pair distribution function (3D-$Δ$PDF) analysis. All steps from sample measurement to data-processing are outlined in detail using a CuIr$_2$S$_4$ example crystal studied in a setup equipped with a high-energy x-ray beam and a flat panel area detector. Computational overhead as it pertains to data-sampling and the associated data processing steps is also discussed. Various aspects of the final 3D-$Δ$PDF reproducibility are explicitly tested by varying data-processing order and included steps, and by carrying out a crystal-to-crystal data comparison. We identify situations in which the 3D-$Δ$PDF is robust, and caution against a few particular cases which can lead to inconsistent 3D-$Δ$PDFs. Although not all the approaches applied here-in will be valid across all systems, and a more in-depth analysis of some of the effects of the data processing steps may still needed, the methods collected here-in represent the start of a more systematic discussion about data processing and corrections in this field. △ Less

Submitted 20 July, 2021; v1 submitted 14 May, 2021; originally announced May 2021.

Journal ref: Acta Cryst. A77, 611 (2021)

Chemical bonding origin of the thermoelectric power factor in Half-Heusler semiconductors

Authors: Kasper Tolborg, Bo B. Iversen

Abstract: Intermetallic semiconductors with the cubic Half-Heusler structure (XYZ) have excellent thermoelectric properties. This has been attributed to the high degeneracy of the carrier pockets in the band structure, but large differences are found between different material compositions. Half-Heuslers are often interpreted within Zintl chemistry, making a clear distinction between an electropositive cati… ▽ More Intermetallic semiconductors with the cubic Half-Heusler structure (XYZ) have excellent thermoelectric properties. This has been attributed to the high degeneracy of the carrier pockets in the band structure, but large differences are found between different material compositions. Half-Heuslers are often interpreted within Zintl chemistry, making a clear distinction between an electropositive cation ($X^{n+}$) and an extended polyanion ($YZ^{n-}$). Based on quantitative real space chemical bonding analysis, we unravel large degrees of covalent bonding between the formal cation and anion, making the Zintl distinction clearly invalid. This covalence is shown to strongly affect the band structure, thermoelectric properties and response properties in the materials, with improved thermoelectric properties observed for those materials that least follow the Zintl concept. This expands our knowledge of the chemical bonding motifs governing physical properties, and gives a critical view on the simplistic chemical concepts too often applied for design of complex materials. △ Less

Submitted 22 April, 2021; originally announced April 2021.

Comments: 29 pages, 12 figures

Journal ref: Chem. Mater. 2021, 33, 13, 5308-5316

Tuneable local order in thermoelectric crystals

Authors: Nikolaj Roth, Jonas Beyer, Karl F. F. Fischer, Kaiyang Xia, Tiejun Zhu, Bo Brummerstedt Iversen

Abstract: Although crystalline solids are characterized by their periodic structures, some are only periodic on average and deviate on a local scale. Distinct local orderings can exist with identical periodic structures making their differences hidden to normal diffraction methods. Using x-ray scattering we investigate the thermoelectric half-Heusler, Nb1-xCoSb, with high vacancy concentrations, where signs… ▽ More Although crystalline solids are characterized by their periodic structures, some are only periodic on average and deviate on a local scale. Distinct local orderings can exist with identical periodic structures making their differences hidden to normal diffraction methods. Using x-ray scattering we investigate the thermoelectric half-Heusler, Nb1-xCoSb, with high vacancy concentrations, where signs of local order have been attributed to differences in stoichiometry. We show that the composition is actually always very close to x = 1/6 irrespective of nominal sample composition, and that the synthesis method controls the local order. The vacancy distribution is shown to follow a vacancy repulsion model, and local structural relaxations around the vacancies are characterized. Control over the local structure provides a new frontier for tuning material properties. △ Less

Submitted 15 March, 2021; originally announced March 2021.

Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics

Authors: Jiawei Zhang, Lirong Song, Bo Brummerstedt Iversen

Abstract: The recent discovery of n-type Mg$_3$Sb$_2$ thermoelectric has ignited intensive research activities on searching for potential n-type dopants for this material. Using first-principles defect calculations, here we conduct a systematic computational screening of potential efficient n-type lanthanide dopants for Mg$_3$Sb$_2$. In addition to La, Ce, Pr, and Tm, we find that high electron concentratio… ▽ More The recent discovery of n-type Mg$_3$Sb$_2$ thermoelectric has ignited intensive research activities on searching for potential n-type dopants for this material. Using first-principles defect calculations, here we conduct a systematic computational screening of potential efficient n-type lanthanide dopants for Mg$_3$Sb$_2$. In addition to La, Ce, Pr, and Tm, we find that high electron concentration ($\geq$ 10$^{20}$ cm$^{-3}$ at the growth temperature of 900 K) can be achieved by do** on the Mg sites with Nd, Gd, Ho, and Lu, which are generally more efficient than other lanthanide dopants and the anion-site dopant Te. Experimentally, we confirm Nd and Tm as effective n-type dopants for Mg$_3$Sb$_2$ since do** with Nd and Tm shows superior thermoelectric figure of merit zT $\geq$ 1.3 with higher electron concentration than do** with Te. Through codo** with Nd (Tm) and Te, simultaneous power factor improvement and thermal conductivity reduction are achieved. As a result, we obtain high zT values of about 1.65 and 1.75 at 775 K in n-type Mg$_{3.5}$Nd$_{0.04}$Sb$_{1.97}$Te$_{0.03}$ and Mg$_{3.5}$Tm$_{0.03}$Sb$_{1.97}$Te$_{0.03}$, respectively, which are among the highest values for n-type Mg$_3$Sb$_2$ without alloying with Mg$_3$Bi$_2$. This work sheds light on exploring promising n-type dopants for the design of Mg$_3$Sb$_2$ thermoelectrics. △ Less

Submitted 27 August, 2020; originally announced August 2020.

Journal ref: Adv. Sci. 2020, 2002867

A simple model for vacancy order and disorder in defective half-Heusler systems

Authors: Nikolaj Roth, Tiejun Zhu, Bo Brummerstedt Iversen

Abstract: Defective half-Heusler systems X(1-x)YZ with large amounts of intrinsic vacancies, such as Nb(1-x)CoSb, Ti(1-x)NiSb and V(1-x)CoSb, are a group of promising thermoelectric materials. Even with high vacancy concentrations they maintain the average half-Heusler crystal structure. These systems show high electrical conductivity but low thermal conductivity arising from an ordered YZ lattice, which co… ▽ More Defective half-Heusler systems X(1-x)YZ with large amounts of intrinsic vacancies, such as Nb(1-x)CoSb, Ti(1-x)NiSb and V(1-x)CoSb, are a group of promising thermoelectric materials. Even with high vacancy concentrations they maintain the average half-Heusler crystal structure. These systems show high electrical conductivity but low thermal conductivity arising from an ordered YZ lattice, which conducts electrons, while the large amounts of vacancies on the X sublattice effectively scatters phonons. Using electron scattering it was recently observed that in addition to Bragg diffraction from the average cubic half-Heusler structure, some of these samples show broad diffuse scattering indicating short-range vacancy order while other samples show sharp additional peaks, indicating long-range vacancy ordering. Here we show that both the short and long-range ordering can be explained using the same simple model, which assumes that vacancies on the X-sublattice avoid each other. The samples showing long-range vacancy order are in agreement with the predicted ground-state of the model, while short-range order samples are quenched high-temperature states of the system. A previous study showed that changes in sample stoichiometry affect whether the short or long-range vacancy structure is obtained, but the present model suggests that thermal treatment of samples should allow controlling the degree of vacancy order, and thereby the thermal conductivity, without changes in composition. This is important as the composition also dictates the amount of electrical carriers. Independent control of electrical carrier concentration and degree of vacancy order should allow further improvements in the thermoelectric properties of these systems. △ Less

Submitted 26 February, 2020; v1 submitted 11 February, 2020; originally announced February 2020.

Expression and interactions of stereo-chemically active lone pairs and their relation to structural distortions and thermal conductivity

Authors: Kasper Tolborg, Carlo Gatti, Bo B. Iversen

Abstract: Stereo-chemically active lone pairs are typically described as an important non-bonding effect, and large interest has centered on understanding the derived effect of lone pair expression on physical properties such as the thermal conductivity. To manipulate such properties, it is essential to understand the conditions that lead to lone pair expression and to provide a quantitative chemical descri… ▽ More Stereo-chemically active lone pairs are typically described as an important non-bonding effect, and large interest has centered on understanding the derived effect of lone pair expression on physical properties such as the thermal conductivity. To manipulate such properties, it is essential to understand the conditions that lead to lone pair expression and to provide a quantitative chemical description. Here we first use density functional theory calculations to establish the presence of stereo-chemically active lone pairs on antimony in $\text{MnSb}_{2}\text{O}_{4}$. The lone pairs are formed through a similar mechanism to those in binary post-transition metal compounds in an oxidation state of two less than their main group number, where the degree of orbital interaction determines the expression of the lone pair. In $\text{MnSb}_{2}\text{O}_{4}$ the Sb lone pairs interact through a void space in the crystal structure, and they minimize their mutual repulsion by introducing a deflection angle. This angle increases significantly with decreasing Sb-Sb distance, thus showing the highly destabilizing nature of the lone pair interactions. Analysis of the chemical bonding in the structure shows that it is dominated by polar covalent interactions. A database search of related ternary chalcogenide structures shows that for structures with a lone pair the degree of lone pair expression is largely determined by whether the antimony-chalcogen units are connected or not, suggesting a cooperative effect. Isolated $\text{SbX}_3$ units have larger X-Sb-X bond angles, and therefore weaker lone pair expression than connected units. Since increased lone pair expression is equivalent to an increased orbital interaction (covalent bonding), which typically leads to increased heat conduction, this can explain the previously established correlation between larger bond angles and lower thermal conductivity. △ Less

Submitted 4 February, 2020; originally announced February 2020.

Comments: 30 pages (including supporting information), 8 figures

Journal ref: IUCrJ (2020). 7, 480-489

Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics

Authors: Jiawei Zhang, Lirong Song, Bo Brummerstedt Iversen

Abstract: n-type Mg3Sb2-based compounds are emerging as a promising class of low-cost thermoelectric materials due to their extraordinary performance at low and intermediate temperatures. However, so far high thermoelectric performance has merely been reported in n-type Mg3Sb2-Mg3Bi2 alloys with a large amount of Bi. Moreover, current synthesis methods of n-type Mg3Sb2 bulk thermoelectrics involve multi-ste… ▽ More n-type Mg3Sb2-based compounds are emerging as a promising class of low-cost thermoelectric materials due to their extraordinary performance at low and intermediate temperatures. However, so far high thermoelectric performance has merely been reported in n-type Mg3Sb2-Mg3Bi2 alloys with a large amount of Bi. Moreover, current synthesis methods of n-type Mg3Sb2 bulk thermoelectrics involve multi-step processes that are time- and energy-consuming. Here we report a fast and straightforward approach to fabricate n-type Mg3Sb2 thermoelectrics using spark plasma sintering, which combines the synthesis and compaction in one step. Using this method, we achieve a high thermoelectric figure of merit zT of ~0.4-1.5 at 300-725 K in n-type (Sc, Te)-doped Mg3Sb2 without alloying with Mg3Bi2. In comparison with the currently reported synthesis methods, the complexity, process time, and cost of the new method are significantly reduced. This work demonstrates a simple, low-cost route for the potential large-scale production of n-type Mg3Sb2 thermoelectrics. △ Less

Submitted 24 November, 2019; originally announced November 2019.

Journal ref: Angew. Chem. Int. Ed. 10.1002/anie.201912909, 2019

Fermi surface complexity, effective mass, and conduction band alignment in n-type thermoelectric Mg3Sb2-xBix from first principles calculations

Authors: Jiawei Zhang, Bo Brummerstedt Iversen

Abstract: Using first principles calculations, we study the conduction band alignment, effective mass, and Fermi surface complexity factor of n-type Mg3Sb2-xBix (x = 0, 1, and 2) from the full ab initio band structure. We find that with increasing the Bi content the K and M band minima moves away from the conduction band minimum CB1 while the singly-degenerate $Γ$ band minimum shifts rapidly downward and ap… ▽ More Using first principles calculations, we study the conduction band alignment, effective mass, and Fermi surface complexity factor of n-type Mg3Sb2-xBix (x = 0, 1, and 2) from the full ab initio band structure. We find that with increasing the Bi content the K and M band minima moves away from the conduction band minimum CB1 while the singly-degenerate $Γ$ band minimum shifts rapidly downward and approaches the conduction band minimum. But the favorable six-fold degenerate CB1 band minimum keeps dominating the conduction band minimum and there is no band crossing between the $Γ$ and CB1 band minima. In addition, we show that the connection of the CB1 carrier pockets with the energy level close to the band minimum M can strongly enhance the carrier pocket anisotropy and Fermi surface complexity factor, which is likely the electronic origin for the local maximum in the theoretical power factor. Our calculations also show that the band gap, density of states effective mass, Seebeck coefficient, and Fermi surface complexity factor decrease with increasing the Bi content, which is unfavorable to the electrical transport. However, reducing the conductivity effective mass with increasing the Bi content is beneficial to the electrical transport by improving carrier mobility and weighted mobility as long as the detrimental bipolar effect is insignificant. As a result, in comparison with n-type Mg3Sb2, n-type Mg3SbBi shows higher power factors and a much lower optimal carrier concentration for the theoretical power factor at 300 K, which can be easily achieved by the experiment. △ Less

Submitted 4 July, 2019; originally announced July 2019.

Journal ref: J. Appl. Phys. 126, 085104 (2019)

Solving the disordered structure of $β$-Cu$_{2-x}$Se using the three-dimensional difference pair distribution function

Authors: Nikolaj Roth, Bo B. Iversen

Abstract: High-performing thermoelectric materials such as Zn$_4$Sb$_3$ and clathrates have atomic disorder as the root to their favorable properties. This makes it extremely difficult to understand and model their properties at a quantitative level, and thus effective structure-property relations are challenging to obtain. Cu$_{2-x}$Se is an intensely studied, cheap and non-toxic high performance thermoele… ▽ More High-performing thermoelectric materials such as Zn$_4$Sb$_3$ and clathrates have atomic disorder as the root to their favorable properties. This makes it extremely difficult to understand and model their properties at a quantitative level, and thus effective structure-property relations are challenging to obtain. Cu$_{2-x}$Se is an intensely studied, cheap and non-toxic high performance thermoelectric, which exhibits highly peculiar transport properties, especially around the $β$ to $α$ phase transition around 400 K, which must be related to the detailed nature of the crystal structure. Attempts to solve the crystal structure of the low temperature phase, $β$-Cu$_{2-x}$Se, have been unsuccessful since 1936. So far all studies have assumed that $β$-Cu$_{2-x}$Se has a three-dimensional periodic structure, but here we show that the structure is ordered only in two dimensions while being disordered in the third dimension with a highly disordered stacking sequence. Using the three-dimensional difference pair distribution function (3D-$Δ$PDF) analysis method for diffuse single crystal X-ray scattering, we solve the structure of the ordered layer and show that there are two modes of stacking disorder present, which give rise to an average structure with higher symmetry. The present approach allows for a direct solution of structures with disorder in some dimensions and order in others. The local and extended structure of a solid determines its properties and Cu$_{2-x}$Se represents an example of a high-performing thermoelectric material where the local atomic structure differs significantly from the average periodic structure observed from Bragg crystallography. △ Less

Submitted 1 May, 2019; v1 submitted 29 November, 2018; originally announced November 2018.

Journal ref: Acta Cryst. (2019). A75, 465-473

Relating chemical bonding to physical properties: The origin of unexpected isotropic properties in layered materials

Authors: Jiawei Zhang, Lirong Song, Mattia Sist, Kasper Tolborg, Bo Brummerstedt Iversen

Abstract: Layered materials span a very broad range of solids ranging from van der Waals materials to highly complex crystal structures such as clays. They are commonly believed to have highly anisotropic properties, which is essentially attributed to weak interlayer interactions. The layered Mg3Sb2 structure is currently being intensely scrutinized due to its outstanding thermoelectric properties. Based on… ▽ More Layered materials span a very broad range of solids ranging from van der Waals materials to highly complex crystal structures such as clays. They are commonly believed to have highly anisotropic properties, which is essentially attributed to weak interlayer interactions. The layered Mg3Sb2 structure is currently being intensely scrutinized due to its outstanding thermoelectric properties. Based on quantitative chemical bonding analysis we unravel that Mg3Sb2 exhibits a nearly isotropic three-dimensional (3D) bonding network with the interlayer and intralayer bonds being surprisingly similar, and these unique chemical bonding features are the origin of the nearly isotropic structural and thermal properties. The isotropic 3D bonding network is found to be broadly applicable to many Mg-containing compounds with the layered CaAl2Si2-type structure. Intriguingly, a parameter based on the electron density can be used as an indicator measuring the anisotropy of lattice thermal conductivity in layered structures. This work extends our understanding of structure and properties based on chemical bonding analysis, and it will guide the search for, and design of, layered materials with tailored anisotropic properties. △ Less

Submitted 2 July, 2018; originally announced July 2018.

Journal ref: Nat. Commun. 9, 4716 (2018)

Model-free reconstruction of magnetic correlations in frustrated magnets

Authors: Nikolaj Roth, Andrew F. May, Feng Ye, Bryan C. Chakoumakos, Bo Brummerstedt Iversen

Abstract: Frustrated magnetic systems exhibit extraordinary physical properties but quantification of their magnetic correlations poses a serious challenge to experiment and theory. Current insight into frustrated magnetic correlations relies on modelling techniques such as reverse Monte Carlo methods, which require knowledge about the exact ordered atomic structure. Here we present a method for direct reco… ▽ More Frustrated magnetic systems exhibit extraordinary physical properties but quantification of their magnetic correlations poses a serious challenge to experiment and theory. Current insight into frustrated magnetic correlations relies on modelling techniques such as reverse Monte Carlo methods, which require knowledge about the exact ordered atomic structure. Here we present a method for direct reconstruction of magnetic correlations in frustrated magnets by three-dimensional difference pair distribution function analysis of neutron total scattering data. The methodology is applied to the disordered frustrated magnet bixbyite, (Mn1-xFex)2O3, which reveals nearest-neighbor antiferromagnetic correlations for the metal sites up to a range of approximately 15 Å. Importantly, this technique allows for magnetic correlations to be determined directly from the experimental data without any assumption about the atomic structure. △ Less

Submitted 6 April, 2018; originally announced April 2018.

Nanoscale Surface Dynamics of Bi$_2$Te$_3$(111): Observation of a Prominent Surface Acoustic Wave and the Role of van der Waals Interactions

Authors: Anton Tamtögl, Davide Campi, Martin Bremholm, Ellen M. J. Hedegaard, Bo B. Iversen, Marco Bianchi, Philip Hofmann, Nicola Marzari, Giorgio Benedek, John Ellis, William Allison

Abstract: We present a combined experimental and theoretical study of the surface vibrational modes of the topological insulator Bi$_2$Te$_3$. Using high-resolution helium-3 spin-echo spectroscopy we are able to resolve the acoustic phonon modes of Bi$_2$Te$_3$(111). The low energy region of the lattice vibrations is mainly dominated by the Rayleigh mode which has been claimed to be absent in previous exper… ▽ More We present a combined experimental and theoretical study of the surface vibrational modes of the topological insulator Bi$_2$Te$_3$. Using high-resolution helium-3 spin-echo spectroscopy we are able to resolve the acoustic phonon modes of Bi$_2$Te$_3$(111). The low energy region of the lattice vibrations is mainly dominated by the Rayleigh mode which has been claimed to be absent in previous experimental studies. The appearance of the Rayleigh mode is consistent with previous bulk lattice dynamics studies as well as theoretical predictions of the surface phonon modes. Density functional perturbation theory calculations including van der Waals corrections are in excellent agreement with the experimental data. Comparison of the experimental results with theoretically obtained values for films with a thickness of several layers further demonstrate, that for an accurate theoretical description of three-dimensional topological insulators with their layered structure the inclusion of van der Waals corrections is essential. The presence of a prominent surface acoustic wave and the contribution of van der Waals bonding to the lattice dynamics may hold important implications for the thermoelectric properties of thin-film and nanoscale devices. △ Less

Submitted 17 July, 2018; v1 submitted 29 March, 2018; originally announced March 2018.

Journal ref: Nanoscale 10 (30), 14627-14636 (2018)

A Helium-Surface Interaction Potential of Bi$_2$Te$_3$(111) from Ultrahigh-Resolution Spin-Echo Measurements

Authors: Anton Tamtögl, Michael Pusterhofer, Martin Bremholm, Ellen M. J. Hedegaard, Bo B. Iversen, Philip Hofmann, John Ellis, William Allison, S. Miret-Artés, Wolfgang E. Ernst

Abstract: We have determined an atom-surface interaction potential for the He$-$Bi$_2$Te$_3$(111) system by analysing ultrahigh resolution measurements of selective adsorption resonances. The experimental measurements were obtained using $^3$He spin-echo spectrometry. Following an initial free-particle model analysis, we use elastic close-coupling calculations to obtain a three-dimensional potential. The th… ▽ More We have determined an atom-surface interaction potential for the He$-$Bi$_2$Te$_3$(111) system by analysing ultrahigh resolution measurements of selective adsorption resonances. The experimental measurements were obtained using $^3$He spin-echo spectrometry. Following an initial free-particle model analysis, we use elastic close-coupling calculations to obtain a three-dimensional potential. The three-dimensional potential is then further refined based on the experimental data set, giving rise to an optimised potential which fully reproduces the experimental data. Based on this analysis, the He$-$Bi$_2$Te$_3$(111) interaction potential can be described by a corrugated Morse potential with a well depth $D=(6.22\pm0.05)~\mathrm{meV}$, a stiffness $κ=(0.92\pm0.01)~\mathrmÅ^{-1}$ and a surface electronic corrugation of $(9.6\pm0.2)$% of the lattice constant. The improved uncertainties of the atom-surface interaction potential should also enable the use in inelastic close-coupled calculations in order to eventually study the temperature dependence and the line width of selective adsorption resonances. △ Less

Submitted 19 February, 2018; originally announced February 2018.

Electron-Phonon Coupling and Surface Debye Temperature of Bi$_2$Te$_3$(111) from Helium Atom Scattering

Authors: Anton Tamtögl, Patrick Kraus, Nadav Avidor, Martin Bremholm, Ellen M. J. Hedegaard, Bo B. Iversen, Marco Bianchi, Philip Hofmann, John Ellis, William Allison, Giorgio Benedek, Wolfgang E. Ernst

Abstract: We have studied the topological insulator Bi$_2$Te$_3$(111) by means of helium atom scattering. The average electron-phonon coupling $λ$ of Bi$_2$Te$_3$(111) is determined by adapting a recently developed quantum-theoretical derivation of the helium scattering probabilities to the case of degenerate semiconductors. Based on the Debye-Waller attenuation of the elastic diffraction peaks of Bi$_2$Te… ▽ More We have studied the topological insulator Bi$_2$Te$_3$(111) by means of helium atom scattering. The average electron-phonon coupling $λ$ of Bi$_2$Te$_3$(111) is determined by adapting a recently developed quantum-theoretical derivation of the helium scattering probabilities to the case of degenerate semiconductors. Based on the Debye-Waller attenuation of the elastic diffraction peaks of Bi$_2$Te$_3$(111), measured at surface temperatures between $110~\mbox{K}$ and $355~\mbox{K}$, we find $λ$ to be in the range of $0.04-0.11$. This method allows to extract a correctly averaged $λ$ and to address the discrepancy between previous studies. The relatively modest value of $λ$ is not surprising even though some individual phonons may provide a larger electron-phonon interaction. Furthermore, the surface Debye temperature of Bi$_2$Te$_3$(111) is determined as ${\rm Θ}_D = (81\pm6)~\mbox{K}$. The electronic surface corrugation was analysed based on close-coupling calculations. By using a corrugated Morse potential a peak-to-peak corrugation of 9% of the lattice constant is obtained. △ Less

Submitted 24 April, 2017; originally announced April 2017.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. B 95, 195401 (2017)

Reorientation of the bicollinear antiferromagnetic structure at the surface of Fe$_{1+y}$Te bulk and thin films

Authors: Torben Hänke, Udai Raj Singh, Lasse Cornils, Sujit Manna, Anand Kamlapure, Martin Bremholm, Ellen Marie Jensen Hedegaard, Bo Brummerstedt Iversen, Philip Hofmann, ** Hu, Jens Wiebe, Zhiqiang Mao, Roland Wiesendanger

Abstract: Establishing the relation between the ubiquitous antiferromagnetism in the non-superconducting parent compounds of unconventional superconductors and their superconducting phase is believed to be important for the understanding of the complex physics in these materials. Going from the bulk systems to thin films strongly affects the phase diagram of unconventional superconductors. For Fe$_{1+y}$Te,… ▽ More Establishing the relation between the ubiquitous antiferromagnetism in the non-superconducting parent compounds of unconventional superconductors and their superconducting phase is believed to be important for the understanding of the complex physics in these materials. Going from the bulk systems to thin films strongly affects the phase diagram of unconventional superconductors. For Fe$_{1+y}$Te, the parent compound of the Fe$_{1+y}$Se$_{1-x}$Te$_x$ superconductors, bulk sensitive neutron diffraction has revealed an in-plane oriented bicollinear antiferromagnetic structure. Here, we show by spin-resolved scanning tunneling microscopy that on the surfaces of bulk Fe$_{1+y}$Te, as well as on thin films grown on the topological insulator Bi$_2$Te$_3$, the spin direction is canted both away from the surface plane and from the high-symmetry directions of the surface unit cell, while kee** the bicollinear magnetic structure. Our results demonstrate that the magnetism at the Fe-chalcogenide surface markedly deviates from a simple in-plane oriented bicollinear antiferromagnetic structure, which implies that the pairing at the surface of the related superconducting compounds might be different from that in the bulk. △ Less

Submitted 29 June, 2016; originally announced June 2016.

Evidence for interfacial superconductivity in a bi-collinear antiferromagnetically ordered FeTe monolayer on a topological insulator

Authors: Sujit Manna, Anand Kamlapure, Lasse Cornils, Torben Hänke, Ellen Marie Jensen Hedegaard, Martin Bremholm, Bo Brummerstedt Iversen, Philip Hofmann, Jens Wiebe, Roland Wiesendanger

Abstract: The discovery of high-temperature superconductivity in Fe-based compounds [1,2] has triggered numerous investigations on the interplay between superconductivity and magnetism [3] and, more recently, on the enhancement of transition temperatures through interface effects [4]. It is widely believed that the emergence of optimal superconductivity is intimately linked to the suppression of long-range… ▽ More The discovery of high-temperature superconductivity in Fe-based compounds [1,2] has triggered numerous investigations on the interplay between superconductivity and magnetism [3] and, more recently, on the enhancement of transition temperatures through interface effects [4]. It is widely believed that the emergence of optimal superconductivity is intimately linked to the suppression of long-range antiferromagnetic (AFM) order, although the exact microscopic picture of this relationship remains elusive [1] due to the lack of data with atomic spatial resolution [5-7]. Here, we present a spin-polarized scanning tunneling spectroscopy (SP-STS) study of ultrathin FeTe$_{1-x}$Se$_x$ (x = 0, 0.5) films grown on prototypical Bi-based bulk topological insulators. Surprisingly, we find an energy gap at the Fermi level indicating superconducting correlations up to Tc ~ 6 K for one unit cell thin FeTe layers grown on Bi2Te3 substrates, in contrast to the non-superconducting FeTe bulk compound [8]. Moreover, SP-STS reveals that the energy gap spatially coexists with bicollinear AFM order. This finding opens novel perspectives for theoretical studies of competing orders in Fe-based superconductors as well as for experimental investigations of exotic phases in heterostructures of topological insulators and superconducting layers. △ Less

Submitted 10 June, 2016; originally announced June 2016.

Sputtering induced re-emergence of the topological surface state in Bi$_2$Se$_3$

Authors: Raquel Queiroz, Gabriel Landolt, Stefan Muff, Bartosz Slomski, Thorsten Schmitt, Vladimir N. Strocov, Jianli Mi, Bo Brummerstedt Iversen, Philip Hofmann, Jürg Osterwalder, Andreas P. Schnyder, J. Hugo Dil

Abstract: We study the fate of the surface states of Bi$_2$Se$_3$ under disorder with strength larger than the bulk gap, caused by neon sputtering and nonmagnetic adsorbates. We find that neon sputtering introduces strong but dilute defects, which can be modeled by a unitary impurity distribution, whereas adsorbates, such as water vapor or carbon monoxide, are best described by Gaussian disorder. Remarkably… ▽ More We study the fate of the surface states of Bi$_2$Se$_3$ under disorder with strength larger than the bulk gap, caused by neon sputtering and nonmagnetic adsorbates. We find that neon sputtering introduces strong but dilute defects, which can be modeled by a unitary impurity distribution, whereas adsorbates, such as water vapor or carbon monoxide, are best described by Gaussian disorder. Remarkably, these two disorder types have a dramatically different effect on the surface states. Our soft x-ray ARPES measurements combined with numerical simulations show that unitary surface disorder pushes the Dirac state to inward quintuplet layers, burying it below an insulating surface layer. As a consequence, the surface spectral function becomes weaker, but retains its quasiparticle peak. This is in contrast to Gaussian disorder, which smears out the quasiparticle peak completely. At the surface of Bi$_2$Se$_3$, the effects of Gaussian disorder can be reduced by removing surface adsorbates using neon sputtering, which, however, introduces unitary scatterers. Since unitary disorder has a weaker effect than Gaussian disorder, the ARPES signal of the Dirac surface state becomes sharper upon sputtering. △ Less

Submitted 18 December, 2015; originally announced December 2015.

Comments: 5+2 pages. 4 figures

Journal ref: Phys. Rev. B 93, 165409 (2016)

Large Seebeck Effect by Charge-Mobility Engineering

Authors: Peijie Sun, Beipei Wei, Jiahao Zhang, Jan M. Tomczak, A. M. Strydom, M. Søndergaard, Bo B. Iversen, Frank Steglich

Abstract: The Seebeck effect describes the generation of an electric potential in a conducting solid exposed to a temperature gradient. Besides fundamental relevance in solid state physics, it serves as a key quantity to determine the performance of functional thermoelectric materials. In most cases, it is dominated by an energy-dependent electronic density of states at the Fermi level, in line with the pre… ▽ More The Seebeck effect describes the generation of an electric potential in a conducting solid exposed to a temperature gradient. Besides fundamental relevance in solid state physics, it serves as a key quantity to determine the performance of functional thermoelectric materials. In most cases, it is dominated by an energy-dependent electronic density of states at the Fermi level, in line with the prevalent efforts toward superior thermoelectrics through the engineering of electronic structure. Here, we demonstrate an alternative source for the Seebeck effect based on charge-carrier relaxation: A charge mobility that changes rapidly with temperature can result in a sizeable addition to the Seebeck coefficient. This new Seebeck source is demonstrated explicitly for Ni-doped CoSb3, where a dramatic mobility change occurs due to the crossover between two different charge-relaxation regimes. Our findings unveil the origin of pronounced features in the Seebeck coefficient of many other elusive materials characterized by a significant mobility mismatch. As the physical origin for the latter can vary greatly, our proposal provides a unifying framework for the understanding of a large panoply of thermoelectric phenomena. When utilized appropriately, this effect can also provide a novel route to the design of improved thermoelectric materials for applications in solid-state cooling or power generation. △ Less

Submitted 31 March, 2015; originally announced March 2015.

Comments: 12 pages, 4 figures and 1 table

Journal ref: Nat. Commun. 6, 7475 (2015)

Strongly anisotropic spin-orbit splitting in a two-dimensional electron gas

Authors: Matteo Michiardi, Marco Bianchi, Maciej Dendzik, Jill Miwa, Moritz Hoesch, Timur K. Kim, Peter Matzen, Jianli Mi, Martin Bremholm, Bo Brummerstedt Iversen, Philip Hofmann

Abstract: Near-surface two-dimensional electron gases on the topological insulator Bi$_2$Te$_2$Se are induced by electron do** and studied by angle-resolved photoemission spectroscopy. A pronounced spin-orbit splitting is observed for these states. The $k$-dependent splitting is strongly anisotropic to a degree where a large splitting ($\approx 0.06$ Å$^{-1}$) can be found in the $\barΓ\bar{M}$ direction… ▽ More Near-surface two-dimensional electron gases on the topological insulator Bi$_2$Te$_2$Se are induced by electron do** and studied by angle-resolved photoemission spectroscopy. A pronounced spin-orbit splitting is observed for these states. The $k$-dependent splitting is strongly anisotropic to a degree where a large splitting ($\approx 0.06$ Å$^{-1}$) can be found in the $\barΓ\bar{M}$ direction while the states are hardly split along $\barΓ\bar{K}$. The direction of the anisotropy is found to be qualitatively inconsistent with results expected for a third-order anisotropic Rashba Hamiltonian. However, a $\mathbf{k} \cdot \mathbf{p}$ model that includes the possibility of band structure anisotropy as well as both isotropic and anisotropic third order Rashba splitting can explain the results. The isotropic third order contribution to the Rashba Hamiltonian is found to be negative, reducing the energy splitting at high $k$. The interplay of band structure, higher order Rashba effect and tuneable do** offers the opportunity to engineer not only the size of the spin-orbit splitting but also its direction. △ Less

Submitted 26 November, 2014; originally announced November 2014.

Comments: 5 pages, 4 figures

Journal ref: Physical Review B 91, 035445 (2015)

Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on Bi$_2$Se$_3$

Authors: A. Eich, M. Michiardi, G. Bihlmayer, X. -G. Zhu, J. -L. Mi, Bo B. Iversen, R. Wiesendanger, Ph. Hofmann, A. A. Khajetoorians, J. Wiebe

Abstract: The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surf… ▽ More The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth bilayer valence band and Bi$_2$Se$_3$ conduction band, and to interband scattering between the two-dimensional topological state and the bismuth-bilayer valence band. The investigation reveals that the bilayer band gap, which is predicted to host one-dimensional topological states at the edges of the bilayer, is pushed several hundred milli-electronvolts above the Fermi level. This result is rationalized by an electron transfer from the bilayer to Bi$_2$Se$_3$ which also leads to a two-dimensional electron state in the Bi$_2$Se$_3$ conduction band with a strong Rashba spin-splitting, coexisting with the topological state and bilayer valence band. △ Less

Submitted 24 September, 2014; originally announced September 2014.

Comments: 11 pages, 5 figures

Screening and atomic-scale engineering of the potential at a topological insulator surface

Authors: P. Löptien, L. Zhou, J. Wiebe, A. A. Khajetoorians, J. L. Mi, B. B. Iversen, Ph. Hofmann, R. Wiesendanger

Abstract: The electrostatic behavior of a prototypical three-dimensional topological insulator Bi$_2$Se$_3$(111) is investigated by a scanning tunneling microscopy (STM) study of the distribution of Rb atoms adsorbed on the surface. The positively charged ions are screened by both free electrons residing in the topological surface state as well as band bending induced quantum well states of the conduction b… ▽ More The electrostatic behavior of a prototypical three-dimensional topological insulator Bi$_2$Se$_3$(111) is investigated by a scanning tunneling microscopy (STM) study of the distribution of Rb atoms adsorbed on the surface. The positively charged ions are screened by both free electrons residing in the topological surface state as well as band bending induced quantum well states of the conduction band, leading to a surprisingly short screening length. Combining a theoretical description of the potential energy with STM-based atomic manipulation, we demonstrate the ability to create tailored electronic potential landscapes on topological surfaces with atomic-scale control. △ Less

Submitted 17 December, 2013; v1 submitted 13 December, 2013; originally announced December 2013.

Direct Measurement of Surface Transport on a Bulk Topological Insulator

Authors: Lucas Barreto, Lisa Kühnemund, Frederik Edler, Christoph Tegenkamp, Jianli Mi, Martin Bremholm, Bo Brummerstedt Iversen, Christian Frydendahl, Marco Bianchi, Philip Hofmann

Abstract: Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining bulk conductivity, surface contributions to transport have so-far only been singled out indirectly via quantum oscillations, or for devices based on gated and… ▽ More Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining bulk conductivity, surface contributions to transport have so-far only been singled out indirectly via quantum oscillations, or for devices based on gated and doped topological insulator thin films, a situation in which the surface carrier mobility could be limited by defect and interface scattering. Here we present the first direct measurement of surface-dominated conduction on an atomically clean surface of bulk-insulating Bi$_2$Te$_2$Se. Using nano-scale four point setups with variable contact distance, we show that the transport at 30 K is two-dimensional rather than three-dimensional and by combining these measurements with angle-resolved photoemission results from the same crystals, we find a surface state mobility of 390(30) cm$^{2}$V$^{-1}$s$^{-1}$ at 30 K at a carrier concentration of 8.71(7)$\times 10^{12}$ cm$^{-2}$. △ Less

Submitted 1 October, 2013; originally announced October 2013.

Journal ref: Nano Letters 14, 3755 (2014)

Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$

Authors: Peijie Sun, Wenhu Xu, Jan M. Tomczak, Gabriel Kotliar, Martin Sondergaard, Bo B. Iversen, Frank Steglich

Abstract: We show that the colossal thermoelectric power, $S(T)$, observed in the correlated semiconductor FeSb$_2$ below 30\,K is accompanied by a huge Nernst coefficient $ν(T)$ and magnetoresistance MR$(T)$. Markedly, the latter two quantities are enhanced in a strikingly similar manner. While in the same temperature range, $S(T)$ of the reference compound FeAs$_2$, which has a seven-times larger energy g… ▽ More We show that the colossal thermoelectric power, $S(T)$, observed in the correlated semiconductor FeSb$_2$ below 30\,K is accompanied by a huge Nernst coefficient $ν(T)$ and magnetoresistance MR$(T)$. Markedly, the latter two quantities are enhanced in a strikingly similar manner. While in the same temperature range, $S(T)$ of the reference compound FeAs$_2$, which has a seven-times larger energy gap, amounts to nearly half of that of FeSb$_2$, its $ν(T)$ and MR$(T)$ are intrinsically different to FeSb$_2$: they are smaller by two orders of magnitude and have no common features. With the charge transport of FeAs$_2$ successfully captured by the density functional theory, we emphasize a significantly dispersive electron-relaxation time $τ(ε_k)$ due to electron-electron correlations to be at the heart of the peculiar thermoelectricity and magnetoresistance of FeSb$_2$. △ Less

Submitted 25 December, 2013; v1 submitted 12 September, 2013; originally announced September 2013.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 88, 245203 (2013)

Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface X-ray diffraction

Authors: Diogo Duarte dos Reis, Lucas Barreto, Marco Bianchi, Guilherme Almeida Silva Ribeiro, Edmar Avellar Soares, Wendell Simoes e Silva, Vagner Eustaquio de Carvalho, Jonathan Rawle, Moritz Hoesch, Chris Nicklin, Willians Principe Fernandes, Jianli Mi, Bo Brummerstedt Iversen, Philip Hofmann

Abstract: The surface structure of the prototypical topological insulator Bi2Se3 is determined by low-energy electron diffraction and surface X-ray diffraction at room temperature. Both approaches show that the crystal is terminated by an intact quintuple layer. Specifically, an alternative termination by a bismuth bilayer is ruled out. Surface relaxations obtained by both techniques are in good agreement w… ▽ More The surface structure of the prototypical topological insulator Bi2Se3 is determined by low-energy electron diffraction and surface X-ray diffraction at room temperature. Both approaches show that the crystal is terminated by an intact quintuple layer. Specifically, an alternative termination by a bismuth bilayer is ruled out. Surface relaxations obtained by both techniques are in good agreement with each other and found to be small. This includes the relaxation of the van der Waals gap between the first two quintuple layers. △ Less

Submitted 14 June, 2013; originally announced June 2013.

Controllable magnetic do** of the surface state of a topological insulator

Authors: T. Schlenk, M. Bianchi, M. Koleini, A. Eich, O. Pietzsch, T. O. Wehling, T. Frauenheim, A. Balatsky, J. -L. Mi, B. B. Iversen, J. Wiebe, A. A. Khajetoorians, Ph. Hofmann, R. Wiesendanger

Abstract: A combined experimental and theoretical study of do** individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can be incorporated into subsurface layers by thermally-activated diffusion. Angle-resolved photoemission spectroscopy in combination with ab-initio calc… ▽ More A combined experimental and theoretical study of do** individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can be incorporated into subsurface layers by thermally-activated diffusion. Angle-resolved photoemission spectroscopy in combination with ab-initio calculations suggest that the do** behavior changes from electron donation for the Fe adatom to neutral or electron acceptance for Fe incorporated into substitutional Bi sites. According to first principles calculations within density functional theory, these Fe substitutional impurities retain a large magnetic moment thus presenting an alternative scheme for magnetically do** the topological surface state. For both types of Fe do**, we see no indication of a gap at the Dirac point. △ Less

Submitted 9 November, 2012; originally announced November 2012.

Comments: 5 pages, 4 figures

Improvements and considerations for size distribution retrieval from small-angle scattering data by Monte-Carlo methods

Authors: Brian Richard Pauw, Jan-Skov Pedersen, Samuel Tardif, Masaki Takata, Bo Brummersted Iversen

Abstract: Monte-Carlo (MC) methods, based on random updates and the trial-and-error principle, are well suited to retrieve particle size distributions from small-angle scattering patterns of dilute solutions of scatterers. The size sensitivity of size determination methods in relation to the range of scattering vectors covered by the data is discussed. Improvements are presented to existing MC methods in wh… ▽ More Monte-Carlo (MC) methods, based on random updates and the trial-and-error principle, are well suited to retrieve particle size distributions from small-angle scattering patterns of dilute solutions of scatterers. The size sensitivity of size determination methods in relation to the range of scattering vectors covered by the data is discussed. Improvements are presented to existing MC methods in which the particle shape is assumed to be known. A discussion of the problems with the ambiguous convergence criteria of the MC methods are given and a convergence criterion is proposed, which also allows the determination of uncertainties on the determined size distributions. △ Less

Submitted 18 October, 2012; originally announced October 2012.

Comments: Accepted author manuscript, 7 pages, 7 figures

Journal ref: J. Appl. Cryst. 46 (2003), pp. 365-371

Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment

Authors: I. A. Nechaev, R. C. Hatch, M. Bianchi, D. Guan, C. Friedrich, I. Aguilera, J. L. Mi, B. B. Iversen, S. Blügel, Ph. Hofmann, E. V. Chulkov

Abstract: Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this is shown by a three-dimensional band map** in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence band maximum is located at… ▽ More Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this is shown by a three-dimensional band map** in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence band maximum is located at the Brillouin center only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center. △ Less

Submitted 19 March, 2013; v1 submitted 16 October, 2012; originally announced October 2012.

Comments: 8 pages, 4 figures

Robust Surface Do** of Bi$_2$Se$_3$ by Rb Intercalation

Authors: Marco Bianchi, Richard C. Hatch, Zheshen Li, Philip Hofmann, Fei Song, Jianli Mi, Bo Brummerstedt Iversen, Zakaria M. Abd El-Fattah, Peter Löptien, Lihui Zhou, Alexander Ako Khajetoorians, Jens Wiebe, Roland Wiesendanger, Justin Wells

Abstract: Rubidium adsorption on the surface of the topological insulator Bi$_2$Se$_3$ is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two dimensional electron gas states (2DEGs) in the conduction band. The 2DEGs shows a strong Rashba-type spin-orbit splitting, and it has previously been pointed out that this has relevance to nano-scale spintronics devices.… ▽ More Rubidium adsorption on the surface of the topological insulator Bi$_2$Se$_3$ is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two dimensional electron gas states (2DEGs) in the conduction band. The 2DEGs shows a strong Rashba-type spin-orbit splitting, and it has previously been pointed out that this has relevance to nano-scale spintronics devices. The adsorption of Rb atoms, on the other hand, renders the surface very reactive and exposure to oxygen leads to a rapid degrading of the 2DEGs. We show that intercalating the Rb atoms, presumably into the van der Waals gaps in the quintuple layer structure of Bi$_2$Se$_3$, drastically reduces the surface reactivity while not affecting the promising electronic structure. The intercalation process is observed above room temperature and accelerated with increasing initial Rb coverage, an effect that is ascribed to the Coulomb interaction between the charged Rb ions. Coulomb repulsion is also thought to be responsible for a uniform distribution of Rb on the surface. △ Less

Submitted 2 August, 2012; originally announced August 2012.

Comments: 6 pages, 4 figures, ACS Nano, in press

Journal ref: ACS Nano 6, 7009 (2012)

The electronic structure of clean and adsorbate-covered Bi2Se3: an angle-resolved photoemission study

Authors: Marco Bianchi, Richard C. Hatch, Dandan Guan, Tilo Planke, Jianli Mi, Bo Brummerstedt Iversen, Philip Hofmann

Abstract: Angle-resolved photoelectron spectroscopy is used for a detailed study of the electronic structure of the topological insulator Bi2Se3. Nominally stoichiometric and calcium-doped samples were investigated. The pristine surface shows the topological surface state in the bulk band gap. As time passes, the Dirac point moves to higher binding energies, indicating an increasingly strong downward bendin… ▽ More Angle-resolved photoelectron spectroscopy is used for a detailed study of the electronic structure of the topological insulator Bi2Se3. Nominally stoichiometric and calcium-doped samples were investigated. The pristine surface shows the topological surface state in the bulk band gap. As time passes, the Dirac point moves to higher binding energies, indicating an increasingly strong downward bending of the bands near the surface. This time-dependent band bending is related to a contamination of the surface and can be accelerated by intentionally exposing the surface to carbon monoxide and other species. For a sufficiently strong band bending, additional states appear at the Fermi level. These are interpreted as quantised conduction band states. For large band bendings, these states are found to undergo a strong Rashba splitting. The formation of quantum well states is also observed for the valence band states. Different interpretations of similar data are also discussed. △ Less

Submitted 7 June, 2012; originally announced June 2012.

Comments: 30 pages, 10 figures

Journal ref: Semiconductor Science and Technology 27, 124001 (2012)

In-plane magnetic anisotropy of Fe atoms on Bi$_2$Se$_3$(111)

Authors: J. Honolka, A. A. Khajetoorians, V. Sessi, T. O. Wehling, S. Stepanow, J. -L. Mi, B. B. Iversen, T. Schlenk, J. Wiebe, N. Brookes, A. I. Lichtenstein, Ph. Hofmann, K. Kern, R. Wiesendanger

Abstract: The robustness of the gapless topological surface state hosted by a 3D topological insulator against perturbations of magnetic origin has been the focus of recent investigations. We present a comprehensive study of the magnetic properties of Fe impurities on a prototypical 3D topological insulator Bi$_2$Se$_3$ using local low temperature scanning tunneling microscopy and integral x-ray magnetic ci… ▽ More The robustness of the gapless topological surface state hosted by a 3D topological insulator against perturbations of magnetic origin has been the focus of recent investigations. We present a comprehensive study of the magnetic properties of Fe impurities on a prototypical 3D topological insulator Bi$_2$Se$_3$ using local low temperature scanning tunneling microscopy and integral x-ray magnetic circular dichroism techniques. Single Fe adatoms on the Bi$_2$Se$_3$ surface, in the coverage range $\approx 1%$ are heavily relaxed into the surface and exhibit a magnetic easy axis within the surface-plane, contrary to what was assumed in recent investigations on the opening of a gap. Using \textit{ab initio} approaches, we demonstrate that an in-plane easy axis arises from the combination of the crystal field and dynamic hybridization effects. △ Less

Submitted 22 December, 2011; v1 submitted 20 December, 2011; originally announced December 2011.

Comments: 5 pages, 3 figures, typos corrected

Simultaneous quantization of bulk conduction and valence states through adsorption of nonmagnetic impurities on Bi2Se3

Authors: Marco Bianchi, Richard C. Hatch, Jianli Mi, Bo Brummerstedt Iversen, Philip Hofmann

Abstract: Exposing the (111) surface of the topological insulator Bi2Se3 to carbon monoxide results in strong shifts of the features observed in angle-resolved photoemission. The behavior is very similar to an often reported `aging' effect of the surface and it is concluded that this aging is most likely due to the adsorption of rest gas molecules. The spectral changes are also similar to those recently rep… ▽ More Exposing the (111) surface of the topological insulator Bi2Se3 to carbon monoxide results in strong shifts of the features observed in angle-resolved photoemission. The behavior is very similar to an often reported `aging' effect of the surface and it is concluded that this aging is most likely due to the adsorption of rest gas molecules. The spectral changes are also similar to those recently reported in connection with the adsorption of the magnetic adatom Fe. All spectral changes can be explained by a simultaneous confinement of the conduction band and valence band states. This is only possible because of the unusual bulk electronic structure of Bi2Se3. The valence band quantization leads to spectral features which resemble those of a band gap opening at the Dirac point. △ Less

Submitted 19 May, 2011; originally announced May 2011.

Comments: 5 pages, 4 figures

Journal ref: Physical Review Letters 107, 086802 (2011)

Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

Authors: Richard C. Hatch, Marco Bianchi, Dandan Guan, Shining Bao, Jianli Mi, Bo Brummerstedt Iversen, Louis Nilsson, Liv Hornekaer, Philip Hofmann

Abstract: The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be lambda=0.25(5), more than an order of magnitu… ▽ More The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be lambda=0.25(5), more than an order of magnitude higher than the corresponding value for intraband scattering in the noble metal surface states. The stability of the topological state with respect to surface irregularities was also tested by introducing a small concentration of surface defects via ion bombardment. It is found that, in contrast to the bulk states, the topological state can no longer be observed in the photoemission spectra and this cannot merely be attributed to surface defect-induced momentum broadening. △ Less

Submitted 26 April, 2011; originally announced April 2011.

Comments: 5 pages, 3 figures

Journal ref: Physical Review B 83, 241303 (2011)

Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3

Authors: P. D. C. King, R. C. Hatch, M. Bianchi, R. Ovsyannikov, C. Lupulescu, G. Landolt, B. Slomski, J. H. Dil, D. Guan, J. L. Mi, E. D. L. Rienks, J. Fink, A. Lindblad, S. Svensson, S. Bao, G. Balakrishnan, B. B. Iversen, J. Osterwalder, W. Eberhardt, F. Baumberger, Ph. Hofmann

Abstract: We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi$_2$Se$_3$ from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achieved which are at least an order-of-magnitude larger than in other semiconductors. Together these results show promise for the miniaturization of spint… ▽ More We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi$_2$Se$_3$ from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achieved which are at least an order-of-magnitude larger than in other semiconductors. Together these results show promise for the miniaturization of spintronic devices to the nanoscale and their operation at room temperature. △ Less

Submitted 26 August, 2011; v1 submitted 16 March, 2011; originally announced March 2011.

Comments: 5 pages, 4 figures. Substantially revised

Journal ref: Phys. Rev. Lett. 107 (2011) 096802

Enhanced electron correlations in FeSb$_2$

Authors: Peijie Sun, Martin Søndergaard, Bo B. Iversen, Frank Steglich

Abstract: FeSb$_2$ has been recently identified as a new model system for studying many-body renormalizations in a $d$-electron based narrow gap semiconducting system, strongly resembling FeSi. The electron-electron correlations in FeSb$_2$ manifest themselves in a wide variety of physical properties including electrical and thermal transport, optical conductivity, magnetic susceptibility, specific heat and… ▽ More FeSb$_2$ has been recently identified as a new model system for studying many-body renormalizations in a $d$-electron based narrow gap semiconducting system, strongly resembling FeSi. The electron-electron correlations in FeSb$_2$ manifest themselves in a wide variety of physical properties including electrical and thermal transport, optical conductivity, magnetic susceptibility, specific heat and so on. We review some of the properties that form a set of experimental evidences revealing the crucial role of correlation effects in FeSb$_2$. The metallic state derived from slight Te do** in FeSb$_2$, which has large quasiparticle mass, will also be introduced. △ Less

Submitted 14 February, 2011; originally announced February 2011.

Comments: 9 pages, 7 figures; submitted to Annalen der Physik

Unchanged thermopower enhancement at the semiconductor-metal transition in correlated FeSb$_{2-x}$Te$_x$

Authors: P. Sun, M. Søndergaard, Y. Sun, S. Johnsen, B. B. Iversen, F. Steglich

Abstract: Substitution of Sb in FeSb$_2$ by less than 0.5% of Te induces a transition from a correlated semiconductor to an unconventional metal with large effective charge carrier mass $m^*$. Spanning the entire range of the semiconductor-metal crossover, we observed an almost constant enhancement of the measured thermopower compared to that estimated by the classical theory of electron diffusion. Using th… ▽ More Substitution of Sb in FeSb$_2$ by less than 0.5% of Te induces a transition from a correlated semiconductor to an unconventional metal with large effective charge carrier mass $m^*$. Spanning the entire range of the semiconductor-metal crossover, we observed an almost constant enhancement of the measured thermopower compared to that estimated by the classical theory of electron diffusion. Using the latter for a quantitative description one has to employ an enhancement factor of 10-30. Our observations point to the importance of electron-electron correlations in the thermal transport of FeSb$_2$, and suggest a route to design thermoelectric materials for cryogenic applications. △ Less

Submitted 1 February, 2011; originally announced February 2011.

Comments: 3 pages, 3 figures, accepted for publication in Appl. Phys. Lett. (2011)

Strong electron correlations in FeSb2: An optical investigation and comparison with RuSb2

Authors: A. Herzog, M. Marutzky, J. Sichelschmidt, F. Steglich, S. Kimura, S. Johnsen, B. B. Iversen

Abstract: We report investigations of the optical properties of the narrow gap semiconductor FeSb2 in comparison with the structural homolog RuSb2. In the infrared region the latter shows insulating behavior in whole investigated temperature range (10 - 300 K) whereas the optical reflectivity of FeSb2 shows typical semiconductor behavior upon decreasing the temperature. The conduction electron contribution… ▽ More We report investigations of the optical properties of the narrow gap semiconductor FeSb2 in comparison with the structural homolog RuSb2. In the infrared region the latter shows insulating behavior in whole investigated temperature range (10 - 300 K) whereas the optical reflectivity of FeSb2 shows typical semiconductor behavior upon decreasing the temperature. The conduction electron contribution to the reflectivity is suppressed and the opening of a direct and an indirect charge excitation gap in the far-infrared energy region is observed. Those gap openings are characterized by a redistribution of spectral weight of the optical conductivity in an energy region much larger than the gap energies indicating that strong electron-electron correlations are involved in the formation of the charge gap. Calculations of the optical conductivity from the band structure also provided evidence for the presence of strong electronic correlations. Analyzing the spectra with a fundamental absorption across the gap of parabolic bands yields a direct gap at 130 meV and two indirect gaps at 6 and 31 meV. The strong reduction in the free-carrier concentration at low energies and low temperatures is also reflected in a change in the asymmetry of the phonon absorption which indicates a change in the phonon-conduction-electron interaction. △ Less

Submitted 15 December, 2010; originally announced December 2010.

Comments: 18 pages, 6 figures, 1 table

Journal ref: Phys. Rev. B 82, 245205 (2010)

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3

Authors: Marco Bianchi, Dandan Guan, Shining Bao, Jianli Mi, Bo Brummerstedt Iversen, Philip D. C. King, Philip Hofmann

Abstract: Topological insulators are a recently discovered class of materials with fascinating properties: While the inside of the solid is insulating, fundamental symmetry considerations require the surfaces to be metallic. The metallic surface states show an unconventional spin texture, electron dynamics and stability. Recently, surfaces with only a single Dirac cone dispersion have received particular at… ▽ More Topological insulators are a recently discovered class of materials with fascinating properties: While the inside of the solid is insulating, fundamental symmetry considerations require the surfaces to be metallic. The metallic surface states show an unconventional spin texture, electron dynamics and stability. Recently, surfaces with only a single Dirac cone dispersion have received particular attention. These are predicted to play host to a number of novel physical phenomena such as Majorana fermions, magnetic monopoles and unconventional superconductivity. Such effects will mostly occur when the topological surface state lies in close proximity to a magnetic or electric field, a (superconducting) metal, or if the material is in a confined geometry. Here we show that a band bending near to the surface of the topological insulator Bi$_2$Se$_3$ gives rise to the formation of a two-dimensional electron gas (2DEG). The 2DEG, renowned from semiconductor surfaces and interfaces where it forms the basis of the integer and fractional quantum Hall effects, two-dimensional superconductivity, and a plethora of practical applications, coexists with the topological surface state in Bi$_2$Se$_3$. This leads to the unique situation where a topological and a non-topological, easily tunable and potentially superconducting, metallic state are confined to the same region of space. △ Less

Submitted 15 September, 2010; originally announced September 2010.

Comments: 12 pages, 3 figures

Journal ref: Nature Communications 1, (1 November 2010)

Huge Thermoelectric Power Factor: FeSb2 versus FeAs2 and RuSb2

Authors: Peijie Sun, Niels Oeschler, Simon Johnsen, Bo B. Iversen, Frank Steglich

Abstract: The thermoelectric power factor of the narrow-gap semiconductor FeSb2 is greatly enhanced in comparison to the isostructural homologues FeAs2 and RuSb2. Comparative studies of magnetic and thermodynamic properties provide evidence that the narrow and correlated bands as well as the associated enhanced thermoelectricity are only specific to FeSb2. Our results point to the potential of FeSb2 for p… ▽ More The thermoelectric power factor of the narrow-gap semiconductor FeSb2 is greatly enhanced in comparison to the isostructural homologues FeAs2 and RuSb2. Comparative studies of magnetic and thermodynamic properties provide evidence that the narrow and correlated bands as well as the associated enhanced thermoelectricity are only specific to FeSb2. Our results point to the potential of FeSb2 for practical thermoelectric application at cryogenic temperatures and stimulate the search for new correlated semiconductors along the same lines. △ Less

Submitted 5 October, 2009; originally announced October 2009.

Comments: 14 pages, 4 figures, published in Applied Physics Express

Journal ref: Applied Physics Express 2 (2009) 091102

Electronic structure and transport in CsBi$_4$Te$_6$

Authors: Lars Lykke, Bo B. Iversen, Georg K. H. Madsen

Abstract: The band structure of the novel low-temperature thermoelectric material, \CBT, is calculated and analyzed using the semi-classic transport equations. It is shown that to obtain a quantitative agreement with measured transport properties a band gap of 0.08 eV must be enforced. A gap in reasonable agreement with experiment was obtained using the generalized gradient functional of Engel and Vosko.… ▽ More The band structure of the novel low-temperature thermoelectric material, \CBT, is calculated and analyzed using the semi-classic transport equations. It is shown that to obtain a quantitative agreement with measured transport properties a band gap of 0.08 eV must be enforced. A gap in reasonable agreement with experiment was obtained using the generalized gradient functional of Engel and Vosko. We found that the experimental $p$-type sample has a carrier concentration close to optimal. Furthermore the conduction bands have a form equally well suited for thermoelectric properties and we predict that an optimally doped $n$-type compound could have thermoelectric properties exceeding those of the $p$-type. △ Less

Submitted 12 April, 2006; originally announced April 2006.