Optical contrast analysis of α-RuCl$_3$ nanoflakes on oxidized silicon wafers
Authors:
Tatyana V. Ivanova,
Daniel Andres-Penares,
Yi** Wang,
Jiaqiang Yan,
Daniel Forbes,
Servet Ozdemir,
Kenneth S. Burch,
Brian D. Gerardot,
Mauro Brotons-Gisbert
Abstract:
α-RuCl$_3$, a narrow-band Mott insulator with large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl$_3$ nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thic…
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α-RuCl$_3$, a narrow-band Mott insulator with large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl$_3$ nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl$_3$ nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl$_3$ nanoflakes with thicknesses below 100 nm on SiO$_2$/Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl$_3$ nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of -0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl$_3$ thickness.
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Submitted 9 May, 2024;
originally announced May 2024.
Probing and control of guided exciton-polaritons in a 2D semiconductor-integrated slab waveguide
Authors:
Valeriy I. Kondratyev,
Dmitry V. Permyakov,
Tatyana V. Ivanova,
Ivan V. Iorsh,
Dmitry N. Krizhanovskii,
Maurice S. Skolnick,
Vasily Kravtsov,
Anton K. Samusev
Abstract:
Guided 2D exciton-polaritons, resulting from the strong coupling of excitons in semiconductors with non-radiating waveguide modes, provide an attractive approach towards develo** novel on-chip optical devices. These quasiparticles are characterized by long propagation distances and efficient nonlinear interaction but cannot be directly accessed from the free space. Here we demonstrate a powerful…
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Guided 2D exciton-polaritons, resulting from the strong coupling of excitons in semiconductors with non-radiating waveguide modes, provide an attractive approach towards develo** novel on-chip optical devices. These quasiparticles are characterized by long propagation distances and efficient nonlinear interaction but cannot be directly accessed from the free space. Here we demonstrate a powerful approach for probing and manipulating guided polaritons in a Ta2O5 slab integrated with a WS2 monolayer using evanescent coupling through a high-index solid immersion lens. Tuning the nanoscale lens-sample gap allows for extracting all the intrinsic parameters of the system. We also demonstrate the transition from weak to strong coupling accompanied by the onset of the motional narrowing effect: with the increase of exciton-photon coupling strength, the inhomogeneous contribution to polariton linewidth, inherited from the exciton resonance, becomes fully lifted. Our results enable the development of integrated optics employing room-temperature exciton-polaritons in 2D semiconductor-based structures.
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Submitted 28 September, 2023; v1 submitted 22 May, 2023;
originally announced May 2023.
