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Comprehensive description of color centers by wave function theory: a CASSCF-NEVPT2 study of the NV defect in diamond
Authors:
Zsolt Benedek,
Ádám Ganyecz,
Anton Pershin,
Viktor Ivády,
Gergely Barcza
Abstract:
Paramagnetic point defects in wide-bandgap semiconductors, characterized by atomic-like in-gap defect states, constitute a unique challenge for ab initio modeling. In this theoretical study, we aim to devise a wave-function only computational protocol, exemplified on the prominent nitrogen-vacancy (NV) center in diamond, which enables the full characterization of future quantum bit candidates impl…
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Paramagnetic point defects in wide-bandgap semiconductors, characterized by atomic-like in-gap defect states, constitute a unique challenge for ab initio modeling. In this theoretical study, we aim to devise a wave-function only computational protocol, exemplified on the prominent nitrogen-vacancy (NV) center in diamond, which enables the full characterization of future quantum bit candidates implemented in color centers. We propose the application of the second order $n$-electron valence state perturbation theory on top of the complete active space self-consistent field approximation (CASSCF-NEVPT2) to provide a balanced ab initio level description of the correlation effects yielded from the defect orbitals and the embedding nanodiamond. By relaxing the molecular cluster under the compression of the surrounding bulk material, we manage to model both the vertical and relaxed experimental electronic spectra within an average error margin of 0.1 eV. Furthermore, the experimentally observed Jahn-Teller behavior of $^3E$ and $^1E$ states, the measured fine structure of the triplet electronic states, as well as the expected spin-selectivity are quantitatively reproduced by the presented methodology. Our findings showcase that using conventional wave-function-based quantum chemical approaches on carefully crafted cluster models can be a competing alternative for discussing the energetics of point defects in solids.
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Submitted 7 June, 2024;
originally announced June 2024.
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Carbon-contaminated topological defects in hexagonal boron nitride for quantum photonics
Authors:
Rohit Babar,
Ádám Ganyecz,
Igor A. Abrikosov,
Gergely Barcza,
Viktor Ivády
Abstract:
Topological defects, such as Stone-Wales defects and grain boundaries, are common in 2D materials. In this study, we investigate the intricate interplay of topological defects and carbon contamination in hexagonal boron nitride revealing an intriguing class of color centers. We demonstrate that both carbon contamination and strain can stabilize Stone-Wales configurations and give rise to emitters…
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Topological defects, such as Stone-Wales defects and grain boundaries, are common in 2D materials. In this study, we investigate the intricate interplay of topological defects and carbon contamination in hexagonal boron nitride revealing an intriguing class of color centers. We demonstrate that both carbon contamination and strain can stabilize Stone-Wales configurations and give rise to emitters with desirable optical properties in the visible spectral range. Inspired by these results, we further demonstrate that carbon atoms at grain boundaries can resolve energetic B-B and N-N bonds leading to highly favorable atomic structures that may facilitate the accumulation of carbon contamination at the boundaries. Similarly to contaminated Stone-Wales defects, carbon-doped grain boundaries can also give rise to color centers emitting in the visible spectral range with short radiative lifetime and high Debye-Waller factors. Our discoveries shed light on an exciting class of defects and pave the way toward the identification of color centers and single photon emitters in hBN.
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Submitted 31 May, 2024; v1 submitted 1 March, 2024;
originally announced March 2024.
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Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes
Authors:
Jake Horder,
Dominic Scognamiglio,
Ádám Ganyecz,
Viktor Ivády,
Mehran Kianinia,
Milos Toth,
Igor Aharonovich
Abstract:
Hexagonal boron nitride (hBN) has recently gained attention as a solid state host of quantum emitters. However, hBN emitters reported to date lack the properties needed for their deployment in scalable quantum technologies. Here we employ spectral hole burning spectroscopy and resonant polarization measurements to observe nearly-coherent hBN quantum emitters, both as singles and in ensembles, with…
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Hexagonal boron nitride (hBN) has recently gained attention as a solid state host of quantum emitters. However, hBN emitters reported to date lack the properties needed for their deployment in scalable quantum technologies. Here we employ spectral hole burning spectroscopy and resonant polarization measurements to observe nearly-coherent hBN quantum emitters, both as singles and in ensembles, with three discrete polarization axes indicative of a C2v symmetry defect. Our results constitute an important milestone towards the implementation of hBN quantum emitters in integrated quantum photonics.
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Submitted 24 May, 2024; v1 submitted 18 February, 2024;
originally announced February 2024.
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Near-zero-field microwave-free magnetometry with nitrogen-vacancy centers in nanodiamonds
Authors:
Omkar Dhungel,
Mariusz Mrózek,
Till Lenz,
Viktor Ivády,
Adam Gali,
Arne Wickenbrock,
Dmitry Budker,
Wojciech Gawlik,
Adam M. Wojciechowski
Abstract:
We study the fluorescence of nanodiamond ensembles as a function of static external magnetic field and observe characteristic dip features close to the zero field with potential for magnetometry applications. We analyze the dependence of the features width and contrast of the feature on the size of the diamond (in the range 30 nm to 3 um) and on the strength of a bias magnetic field applied transv…
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We study the fluorescence of nanodiamond ensembles as a function of static external magnetic field and observe characteristic dip features close to the zero field with potential for magnetometry applications. We analyze the dependence of the features width and contrast of the feature on the size of the diamond (in the range 30 nm to 3 um) and on the strength of a bias magnetic field applied transversely to the field being scanned. We also perform optically detected magnetic resonance (ODMR) measurements to quantify the strain splitting of the zero-field ODMR resonance across various nanodiamond sizes and compare it with the width and contrast measurements of the zero-field fluorescence features for both nanodiamonds and bulk samples. The observed properties provide compelling evidence of cross-relaxation effects in the NV system occurring close to zero magnetic fields. Finally, the potential of this technique for use in practical magnetometry is discussed.
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Submitted 6 February, 2024; v1 submitted 16 January, 2024;
originally announced January 2024.
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Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide
Authors:
Erik Hesselmeier,
Pierre Kuna,
István Takács,
Viktor Ivády,
Wolfgang Knolle,
Misagh Ghezellou,
Jawad Ul-Hassan,
Durga Dasari,
Florian Kaiser,
Vadim Vorobyov,
Jörg Wrachtrup
Abstract:
Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environment around single silicon vacancy color-centers (V2) in 4H-SiC. By using the electron spin-3/2 qudit as a 4 level sensor, we identify several groups of $^{29}$Si and $^{13}$C nuclear spins through their hyperfine interact…
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Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environment around single silicon vacancy color-centers (V2) in 4H-SiC. By using the electron spin-3/2 qudit as a 4 level sensor, we identify several groups of $^{29}$Si and $^{13}$C nuclear spins through their hyperfine interaction. We extract the major components of their hyperfine coupling via optical detected nuclear resonance, and assign them to shell groups in the crystal via the DFT simulations. We utilise the ground state level anti-crossing of the electron spin for dynamic nuclear polarization and achieve a nuclear spin polarization of up to $98\pm6\,\%$. We show that this scheme can be used to detect the nuclear magnetic resonance signal of individual spins and demonstrate their coherent control. Our work provides a detailed set of parameters for future use of SiC as a multi-qubit memory and quantum computing platform.
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Submitted 24 October, 2023;
originally announced October 2023.
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Accurate Hyperfine Tensors for Solid State Quantum Applications: Case of the NV Center in Diamond
Authors:
István Takács,
Viktor Ivády
Abstract:
The decoherence of point defect qubits is often governed by the electron spin-nuclear spin hyperfine interaction that can be parameterized by using ab inito calculations in principle. So far most of the theoretical works have focused on the hyperfine interaction of the closest nuclear spins, while the accuracy of the predictions for distinct nuclear spins is barely discussed. We demonstrate for th…
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The decoherence of point defect qubits is often governed by the electron spin-nuclear spin hyperfine interaction that can be parameterized by using ab inito calculations in principle. So far most of the theoretical works have focused on the hyperfine interaction of the closest nuclear spins, while the accuracy of the predictions for distinct nuclear spins is barely discussed. We demonstrate for the case of the NV center in diamond that the absolute relative error of the computed hyperfine parameters can exceed 100\% in VASP for weakly coupled nuclear spins. To overcome this issue, we implement an alternative method and report on significantly improved hyperfine values with $O$(1\%) relative mean error at all distances. The provided accurate hyperfine data for the NV center enables high-precision simulation of NV quantum nodes for quantum information processing and positioning of nuclear spins by comparing experimental and theoretical hyperfine data.
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Submitted 9 May, 2024; v1 submitted 7 September, 2023;
originally announced September 2023.
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First principles theory of the nitrogen interstitial in hBN: a plausible model for the blue emitter
Authors:
Ádám Ganyecz,
Rohit Babar,
Zsolt Benedek,
Igor Aharonovich,
Gergely Barcza,
Viktor Ivády
Abstract:
Color centers in hexagonal boron nitride (hBN) have attracted considerable attention due to their remarkable optical properties enabling robust room temperature photonics and quantum optics applications in the visible spectral range. On the other hand, identification of the microscopic origin of color centers in hBN has turned out to be a great challenge that hinders in-depth theoretical character…
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Color centers in hexagonal boron nitride (hBN) have attracted considerable attention due to their remarkable optical properties enabling robust room temperature photonics and quantum optics applications in the visible spectral range. On the other hand, identification of the microscopic origin of color centers in hBN has turned out to be a great challenge that hinders in-depth theoretical characterization, on-demand fabrication, and development of integrated photonic devices. This is also true for the blue emitter, which is an irradiation damage in hBN emitting at 436 nm wavelengths with desirable properties. Here, we propose the negatively charged nitrogen split interstitial defect in hBN as a plausible microscopic model for the blue emitter. To this end, we carry out a comprehensive first principles theoretical study of the nitrogen interstitial. We carefully analyze the accuracy of first principles methods and show that the commonly used HSE hybrid exchange-correlation functional fails to describe the electronic structure of this defect. Using the generalized Koopman's theorem, we fine tune the functional and obtain a zero-phonon photoluminescence (ZPL) energy in the blue spectral range. We show that the defect exhibits high emission rate in the ZPL line and features a characteristic phonon side band that resembles the blue emitter's spectrum. Furthermore, we study the electric field dependence of the ZPL and numerically show that the defect exhibits a quadratic Stark shift for perpendicular to plane electric fields, making the emitter insensitive to electric field fluctuations in first order. Our work emphasize the need for assessing the accuracy of common first principles methods in hBN and exemplifies a workaround methodology. Furthermore, our work is a step towards understanding the structure of the blue emitter and utilizing it in photonics applications.
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Submitted 3 August, 2023;
originally announced August 2023.
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ADAQ-SYM: Automated Symmetry Analysis of Defect Orbitals
Authors:
William Stenlund,
Joel Davidsson,
Viktor Ivády,
Rickard Armiento,
Igor A. Abrikosov
Abstract:
Quantum technologies like single photon emitters and qubits can be enabled by point defects in semiconductors, with the NV-center in diamond being the most prominent example. There are many different semiconductors, each potentially hosting interesting defects. The symmetry properties of the point defect orbitals can yield useful information about the behavior of the system, such as the interactio…
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Quantum technologies like single photon emitters and qubits can be enabled by point defects in semiconductors, with the NV-center in diamond being the most prominent example. There are many different semiconductors, each potentially hosting interesting defects. The symmetry properties of the point defect orbitals can yield useful information about the behavior of the system, such as the interaction with polarized light. We have developed a tool to perform symmetry analysis of point defect orbitals obtained by plane-wave density functional theory simulations. The software tool, named ADAQ-SYM, calculates the characters for each orbital, finds the irreducible representations, and uses selection rules to find which optical transitions are allowed. The capabilities of ADAQ-SYM are demonstrated on several defects in diamond and 4H-SiC. The symmetry analysis explains the different zero phonon line (ZPL) polarization of the hk and kh divacancies in 4H-SiC.
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Submitted 26 April, 2024; v1 submitted 10 July, 2023;
originally announced July 2023.
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Symmetric carbon tetramers forming chemically stable spin qubits in hBN
Authors:
Zsolt Benedek,
Rohit Babar,
Ádám Ganyecz,
Tibor Szilvási,
Örs Legeza,
Gergely Barcza,
Viktor Ivády
Abstract:
Point defect quantum bits in semiconductors have the potential to revolutionize sensing at atomic scales. Currently, vacancy related defects, such as the NV center in diamond and the VB$^-$ in hexagonal boron nitride (hBN), are at the forefront of high spatial resolution and low dimensional sensing. On the other hand, vacancies' reactive nature and instability at the surface limit further developm…
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Point defect quantum bits in semiconductors have the potential to revolutionize sensing at atomic scales. Currently, vacancy related defects, such as the NV center in diamond and the VB$^-$ in hexagonal boron nitride (hBN), are at the forefront of high spatial resolution and low dimensional sensing. On the other hand, vacancies' reactive nature and instability at the surface limit further developments. Here, we study the symmetric carbon tetramers in hBN and propose them as a chemically stable spin qubit for sensing in low dimensions. We utilize periodic-DFT and quantum chemistry approaches to reliably and accurately predict the electronic, optical, and spin properties of the studied defect. We show that the nitrogen centered symmetric carbon tetramer gives rise to spin state dependent optical signals with strain sensitive intersystem crossing rates. Furthermore, the weak hyperfine coupling of the defect to their spin environments results in a reduced electron spin resonance linewidth that may enhance sensitivity.
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Submitted 24 March, 2023;
originally announced March 2023.
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Near zero-field microwave-free magnetometry with ensembles of nitrogen-vacancy centers in diamond
Authors:
Omkar Dhungel,
Till Lenz,
Muhib Omar,
Joseph Shaji Rebeirro,
Minh-Tuan Luu,
Ali Tayefeh Younesi,
Ronald Ulbricht,
Viktor Ivady,
Adam Gali,
Arne Wickenbrock,
Dmitry Budker
Abstract:
We study cross-relaxation features near zero magnetic field with ensembles of nitrogen-vacancy (NV) centers in diamond and examine their properties in samples with a range (0.9 ppm - 16.0 ppm) of NV concentrations. The observed NV-NV cross-relaxation features between differently oriented NV centers in high (greater than 0.9 ppm)-NV-density samples hold promise for a variety of magnetometry applica…
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We study cross-relaxation features near zero magnetic field with ensembles of nitrogen-vacancy (NV) centers in diamond and examine their properties in samples with a range (0.9 ppm - 16.0 ppm) of NV concentrations. The observed NV-NV cross-relaxation features between differently oriented NV centers in high (greater than 0.9 ppm)-NV-density samples hold promise for a variety of magnetometry applications where microwave fields (or any bias field) disturb the system under study. We theoretically determine the values of the bias magnetic fields corresponding to cross-relaxations between different axes and experimentally validate them. The behavior of zero-field cross-relaxation features as a function of temperature is also investigated.
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Submitted 30 May, 2024; v1 submitted 23 January, 2023;
originally announced January 2023.
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Photophysics of blue quantum emitters in hexagonal Boron Nitride
Authors:
Ivan Zhigulin,
Karin Yamamura,
Viktor Ivády,
Angus Gale,
Jake Horder,
Charlene J. Lobo,
Mehran Kianinia,
Milos Toth,
Igor Aharonovich
Abstract:
Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statisti…
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Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications.
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Submitted 10 January, 2023;
originally announced January 2023.
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Stark effect of quantum blue emitters in hBN
Authors:
Ivan Zhigulin,
Jake Horder,
Victor Ivady,
Simon J. U. White,
Angus Gale,
Chi Li,
Charlene J. Lobo,
Milos Toth,
Igor Aharonovich,
Mehran Kianinia
Abstract:
Inhomogeneous broadening is a major limitation for the application of quantum emitters in hBN to integrated quantum photonics. Here we demonstrate that blue emitters with an emission wavelength of 436 nm are less sensitive to electric fields than other quantum emitter species in hBN. Our measurements of Stark shifts indicate negligible transition dipole moments for these centers with dominant quad…
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Inhomogeneous broadening is a major limitation for the application of quantum emitters in hBN to integrated quantum photonics. Here we demonstrate that blue emitters with an emission wavelength of 436 nm are less sensitive to electric fields than other quantum emitter species in hBN. Our measurements of Stark shifts indicate negligible transition dipole moments for these centers with dominant quadratic stark effect. Using these results, we employed DFT calculations to identify possible point defects with small transition dipole moments, which may be the source of blue emitters in hBN.
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Submitted 1 August, 2022;
originally announced August 2022.
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Exhaustive characterization of modified Si vacancies in 4H-SiC
Authors:
Joel Davidsson,
Rohit Babar,
Danial Shafizadeh,
Ivan G. Ivanov,
Viktor Ivády,
Rickard Armiento,
Igor A. Abrikosov
Abstract:
The negatively charged silicon vacancy ($\mathrm{V_{Si}^-}$) in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of ensemble photoluminescence and electron paramagnetic resonance measurements reveals an abundance of related but so far unidentified signals. In this study, we search for defects in 4H-SiC that explain the above magneto-opt…
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The negatively charged silicon vacancy ($\mathrm{V_{Si}^-}$) in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of ensemble photoluminescence and electron paramagnetic resonance measurements reveals an abundance of related but so far unidentified signals. In this study, we search for defects in 4H-SiC that explain the above magneto-optical signals in a defect database generated by Automatic Defect Analysis and Qualification (ADAQ) workflows. This search reveals only one class of atomic structures that exhibit silicon-vacancy-like properties in the data: a carbon antisite ($\mathrm{C_{Si}}$) within sub-nanometer distances from the silicon vacancy only slightly alters the latter without affecting the charge or spin state. Such a perturbation is energetically bound. We consider the formation of $\mathrm{V_{Si}^-+C_{Si}}$ up to 2 nm distance and report their zero phonon lines and zero field splitting values. In addition, we perform high-resolution photoluminescence experiments in the silicon vacancy region and find an abundance of lines. Comparing our computational and experimental results, several configurations show great agreement. Our work demonstrates the effectiveness of a database with high-throughput results in the search for defects in quantum applications.
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Submitted 19 October, 2022; v1 submitted 25 May, 2022;
originally announced May 2022.
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Isotope purification induced reduction of spin relaxation and spin coherence times in semiconductors
Authors:
Oscar Bulancea-Lindvall,
Matthew Travis Eiles,
Nguyen Tien Son,
Igor A. Abrikosov,
Viktor Ivády
Abstract:
Paramagnetic defects and nuclear spins are often the major sources of decoherence and spin relaxation in solid-state qubits realized by optically addressable point defect spins in semiconductors. It is commonly accepted that a high degree of depletion of nuclear spins can enhance the coherence time by reducing magnetic noise. Here we show that the isotope purification beyond a certain optimal leve…
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Paramagnetic defects and nuclear spins are often the major sources of decoherence and spin relaxation in solid-state qubits realized by optically addressable point defect spins in semiconductors. It is commonly accepted that a high degree of depletion of nuclear spins can enhance the coherence time by reducing magnetic noise. Here we show that the isotope purification beyond a certain optimal level becomes contra-productive, when both electron and nuclear spins are present in the vicinity of the qubits. Using state-of-the-art numerical tools and considering the silicon vacancy qubit in various spin environments, we demonstrate that the coupling to spin-1/2 point defects in the lattice can be significantly enhanced by isotope purification. The enhanced coupling shortens the spin relaxation time that in turn may limit the the coherence time of spin qubits. Our results can be straightforwardly generalized to triplet point defect qubits, such as the NV center in diamond and the divacancy in SiC.
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Submitted 10 May, 2022;
originally announced May 2022.
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Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide
Authors:
Oscar Bulancea-Lindvall,
Matthew T. Eiles,
Nguyen Tien Son,
Igor A. Abrikosov,
Viktor Ivády
Abstract:
Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications with high spatial resolution. The nearly degenerate quartet ground state of the silicon vacancy qubit in silicon carbide (SiC) is of special interest in this re…
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Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications with high spatial resolution. The nearly degenerate quartet ground state of the silicon vacancy qubit in silicon carbide (SiC) is of special interest in this respect, as it gives rise to relaxation rate extrema at vanishing magnetic field values and emits in the first near-infra-red transmission window of biological tissues, providing an opportunity for develo** novel sensing applications for medicine and biology. However, the relaxation dynamics of the silicon vacancy center in SiC have not yet been fully explored. In this paper, we present results from a comprehensive theoretical investigation of the dipolar spin relaxation of the quartet spin states in various local spin environments. We discuss the underlying physics and quantify the magnetic field and spin bath dependent relaxation time $T_1$. Using these findings we demonstrate that the silicon vacancy qubit in SiC can implement microwave-free low magnetic field quantum sensors of great potential.
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Submitted 25 January, 2022; v1 submitted 11 January, 2022;
originally announced January 2022.
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Decoherence of V$_{\rm B}^{-}$ spin defects in monoisotopic hexagonal boron nitride
Authors:
A. Haykal,
R. Tanos,
N. Minotto,
A. Durand,
F. Fabre,
J. Li,
J. H. Edgar,
V. Ivady,
A. Gali,
T. Michel,
A. Dréau,
B. Gil,
G. Cassabois,
V. Jacques
Abstract:
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure…
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Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure of the spin defect while changing the boron isotope, we first unambiguously confirm that it corresponds to the negatively-charged boron-vacancy center (${\rm V}_{\rm B}^-$). We then show that its spin coherence properties are slightly improved in $^{10}$B-enriched samples. This is supported by numerical simulations employing cluster correlation expansion methods, which reveal the importance of the hyperfine Fermi contact term for calculating the coherence time of point defects in hBN. Using cross-relaxation spectroscopy, we finally identify dark electron spin impurities as an additional source of decoherence. This work provides new insights into the properties of ${\rm V}_{\rm B}^-$ spin defects, which are valuable for the future development of hBN-based quantum sensing foils.
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Submitted 19 December, 2021;
originally announced December 2021.
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Quantum sensor in a single layer van der Waals material
Authors:
Rohit Babar,
Gergely Barcza,
Anton Pershin,
Hyoju Park,
Oscar Bulancea Lindvall,
Gergő Thiering,
Örs Legeza,
Jamie H. Warner,
Igor A. Abrikosov,
Adam Gali,
Viktor Ivády
Abstract:
Point defect qubits in semiconductors have demonstrated their outstanding high spatial resolution sensing capabilities of broad multidisciplinary interest. Two-dimensional (2D) semiconductors hosting such sensors have recently opened up new horizons for sensing in the subnanometer scales in 2D heterostructures. However, controlled creation of quantum sensor in a single layer 2D materials with high…
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Point defect qubits in semiconductors have demonstrated their outstanding high spatial resolution sensing capabilities of broad multidisciplinary interest. Two-dimensional (2D) semiconductors hosting such sensors have recently opened up new horizons for sensing in the subnanometer scales in 2D heterostructures. However, controlled creation of quantum sensor in a single layer 2D materials with high sensitivity has been elusive so far. Here, we report on a novel 2D quantum sensor, the VB2 centre in hexagonal boron nitride (hBN), with superior sensing capabilities. The centre's inherently low symmetry configuration gives rise to unique electronic and spin properties that implement a qubit in a 2D material with unprecedented sensitivity. The qubit is decoupled from its dense spin environment at low magnetic fields that gives rise to the reduction of the spin resonance linewidth and elongation of the coherence time. The VB2 centre is also equipped with a classical memory that can be utilized in storing population information. Using scanning transmission electron microscopy imaging, we confirm the presence of the point defect structure in free standing monolayer hBN created by electron beam irradiation. Our results provide a new material solution towards atomic-scale sensing in low dimensions.
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Submitted 18 November, 2021;
originally announced November 2021.
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Dipolar spin relaxation of divacancy qubits in silicon carbide
Authors:
Oscar Bulancea Lindvall,
Nguyen Tien Son,
Igor A. Abrikosov,
Viktor Ivády
Abstract:
Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point defects, for instance, spin relaxation has not been thoroughly studied yet. Here, we carry out a theoretical study on environmental spin induced spin relaxation proc…
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Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point defects, for instance, spin relaxation has not been thoroughly studied yet. Here, we carry out a theoretical study on environmental spin induced spin relaxation processes of divacancy qubits in 4H-SiC. We reveal all the relevant magnetic field values where the longitudinal spin relaxation time T$_1$ drops resonantly due to the coupling to either nuclear spins or electron spins. We quantitatively analyze the dependence of the T$_1$ time on the concentration of point defect spins and the applied magnetic field in the most relevant cases and provide an analytical expression. We demonstrate that dipolar spin relaxation plays a significant role both in as-grown and ion implanted samples and it often limits the coherence time in 4H-SiC.
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Submitted 28 September, 2021; v1 submitted 2 February, 2021;
originally announced February 2021.
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Coherent dynamics of multi-spin $\rm V_B^-$ centers in hexagonal boron nitride
Authors:
W. Liu,
V. Ivády,
Z. -P. Li,
Y. -Z. Yang,
S. Yu,
Y. Meng,
Z. -A. Wang,
N. -J. Guo,
F. -F. Yan,
Q. Li,
J. -F. Wang,
J. -S. Xu,
X. Liu,
Z. -Q. Zhou Y. Dong,
X. -D. Chen,
F. -W. Sun,
Y. -T. Wang,
J. -S. Tang,
A. Gali,
C. -F. Li,
G. -C. Guo
Abstract:
Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillatio…
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Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillation and related dynamical phenomena of the negatively charged boron vacancy ($\rm V_B^-$) spins in hBN. We report on different dynamics of the $\rm V_B^-$ spins at weak and strong magnetic fields. In the former case the defect behaves like a single electron spin system, while in the latter case it behaves like a multi-spin system exhibiting the multiple-frequency dynamical oscillation like clear beat in Ramsey fringes. We also carry out theoretical simulations for the spin dynamics of $\rm V_B^-$ and reveal that the nuclear spins can be driven via the strong electric-nuclear coupling existing in $\rm V_B^-$ center, which can be modulated by the magnetic field and microwave field.
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Submitted 1 October, 2022; v1 submitted 27 January, 2021;
originally announced January 2021.
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Room-temperature control and electrical readout of individual nitrogen-vacancy nuclear spins
Authors:
Michal Gulka,
Daniel Wirtitsch,
Viktor Ivády,
Jelle Vodnik,
Jaroslav Hruby,
Goele Magchiels,
Emilie Bourgeois,
Adam Gali,
Michael Trupke,
Milos Nesladek
Abstract:
Nuclear spins in semiconductors are leading candidates for quantum technologies, including quantum computation, communication, and sensing. Nuclear spins in diamond are particularly attractive due to their extremely long coherence lifetime. With the nitrogen-vacancy (NV) centre, such nuclear qubits benefit from an auxiliary electronic qubit, which has enabled entanglement mediated by photonic link…
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Nuclear spins in semiconductors are leading candidates for quantum technologies, including quantum computation, communication, and sensing. Nuclear spins in diamond are particularly attractive due to their extremely long coherence lifetime. With the nitrogen-vacancy (NV) centre, such nuclear qubits benefit from an auxiliary electronic qubit, which has enabled entanglement mediated by photonic links. The transport of quantum information by the electron itself, via controlled transfer to an adjacent centre or via the dipolar interaction, would enable even faster and smaller processors, but optical readout of arrays of such nodes presents daunting challenges due to the required sub-diffraction inter-site distances. Here, we demonstrate the electrical readout of a basic unit of such systems - a single 14N nuclear spin coupled to the NV electron. Our results provide the key ingredients for quantum gate operations and electrical readout of nuclear qubit registers, in a manner compatible with nanoscale electrode structures. This demonstration is therefore a milestone towards large-scale diamond quantum devices with semiconductor scalability.
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Submitted 12 January, 2021;
originally announced January 2021.
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ADAQ: Automatic workflows for magneto-optical properties of point defects in semiconductors
Authors:
Joel Davidsson,
Viktor Ivády,
Rickard Armiento,
Igor A. Abrikosov
Abstract:
Automatic Defect Analysis and Qualification (ADAQ) is a collection of automatic workflows developed for high-throughput simulations of magneto-optical properties of point defect in semiconductors. These workflows handle the vast number of defects by automating the processes to relax the unit cell of the host material, construct supercells, create point defect clusters, and execute calculations in…
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Automatic Defect Analysis and Qualification (ADAQ) is a collection of automatic workflows developed for high-throughput simulations of magneto-optical properties of point defect in semiconductors. These workflows handle the vast number of defects by automating the processes to relax the unit cell of the host material, construct supercells, create point defect clusters, and execute calculations in both the electronic ground and excited states. The main outputs are the magneto-optical properties which include zero-phonon lines, zero-field splitting, and hyperfine coupling parameters. In addition, the formation energies are calculated. We demonstrate the capability of ADAQ by performing a complete characterization of the silicon vacancy in silicon carbide in the polytype 4H (4H-SiC).
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Submitted 9 August, 2021; v1 submitted 28 August, 2020;
originally announced August 2020.
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Stone-Wales defects in hexagonal boron nitride as ultraviolet emitters
Authors:
Hanen Hamdi,
Gergő Thiering,
Zoltán Bodrog,
Viktor Ivády,
Adam Gali
Abstract:
Many quantum emitters have been measured close or near the grain boundaries of the two-dimensional hexagonal boron nitride where various Stone-Wales defects appear. We show by means of first principles density functional theory calculations that the pentagon-heptagon Stone-Wales defect is an ultraviolet emitter and its optical properties closely follow the characteristics of a 4.08-eV quantum emit…
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Many quantum emitters have been measured close or near the grain boundaries of the two-dimensional hexagonal boron nitride where various Stone-Wales defects appear. We show by means of first principles density functional theory calculations that the pentagon-heptagon Stone-Wales defect is an ultraviolet emitter and its optical properties closely follow the characteristics of a 4.08-eV quantum emitter often observed in polycrystalline hexagonal boron nitride. We also show that the square-octagon Stone-Wales line defects are optically active in the ultraviolet region with varying gaps depending on their density in hexagonal boron nitride. Our results may introduce a paradigm shift in the identification of fluorescent centres in this material.
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Submitted 16 August, 2020;
originally announced August 2020.
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Photoluminescence at the ground state level anticrossing of the nitrogen-vacancy center in diamond
Authors:
Viktor Ivády,
Huijie Zheng,
Arne Wickenbrock,
Lykourgos Bougas,
Georgios Chatzidrosos,
Kazuo Nakamura,
Hitoshi Sumiya,
Takeshi Ohshima,
Junichi Isoya,
Dmitry Budker,
Igor A. Abrikosov,
Adam Gali
Abstract:
The nitrogen-vacancy center (NV center) in diamond at magnetic fields corresponding to the ground state level anticrossing (GSLAC) region gives rise to rich photoluminescence (PL) signals due to the vanishing energy gap between the electron spin states, which enables to have an effect on the NV center's luminescence for a broad variety of environmental couplings. In this article we report on the G…
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The nitrogen-vacancy center (NV center) in diamond at magnetic fields corresponding to the ground state level anticrossing (GSLAC) region gives rise to rich photoluminescence (PL) signals due to the vanishing energy gap between the electron spin states, which enables to have an effect on the NV center's luminescence for a broad variety of environmental couplings. In this article we report on the GSLAC photoluminescence signature of NV ensembles in different spin environments at various external fields. We investigate the effects of transverse electric and magnetic fields, P1 centers, NV centers, and the $^{13}$C nuclear spins, each of which gives rise to a unique PL signature at the GSLAC. The comprehensive analysis of the couplings and related optical signal at the GSLAC provides a solid ground for advancing various microwave-free applications at the GSLAC, including but not limited to magnetometry, spectroscopy, dynamic nuclear polarization (DNP), and nuclear magnetic resonance (NMR) detection. We demonstrate that not only the most abundant $^{14}$NV center but the $^{15}$NV can also be utilized in such applications and that nuclear spins coupled to P1 centers can be polarized directly by the NV center at the GSLAC, through a giant effective nuclear $g$-factor arising from the NV center-P1 center-nuclear spin coupling. We report on new alternative for measuring defect concentration in the vicinity of NV centers and on the optical signatures of interacting, mutually aligned NV centers.
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Submitted 19 June, 2020; v1 submitted 9 June, 2020;
originally announced June 2020.
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DMRG on top of plane-wave Kohn-Sham orbitals: case study of defected boron nitride
Authors:
Gergely Barcza,
Viktor Ivády,
Tibor Szilvási,
Márton Vörös,
Libor Veis,
Ádám Gali,
Örs Legeza
Abstract:
In this paper, we analyze the numerical aspects of the inherently multi-reference density matrix renormalization group (DMRG) calculations on top of the periodic Kohn-Sham density functional theory (DFT) using the complete active space (CAS) approach. Following the technical outline related to the computation of the Hamiltonian matrix elements and to the construction of the active space, we illust…
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In this paper, we analyze the numerical aspects of the inherently multi-reference density matrix renormalization group (DMRG) calculations on top of the periodic Kohn-Sham density functional theory (DFT) using the complete active space (CAS) approach. Following the technical outline related to the computation of the Hamiltonian matrix elements and to the construction of the active space, we illustrate the potential of the framework by studying the vertical many-body energy spectrum of hexagonal boron nitride (hBN) nano-flakes embedding a single boron vacancy point defect with prominent multi-reference character. We investigate the consistency of the DMRG energy spectrum from the perspective of sample size, basis size, and active space selection protocol. Results obtained from standard quantum chemical atom-centered basis calculations and plane-wave based counterparts show excellent agreement. Furthermore, we also discuss the spectrum of the periodic sheet which is in good agreement with extrapolated data of finite clusters. These results pave the way toward applying DMRG method in extended correlated solid state systems, such as point qubit in wide band gap semiconductors.
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Submitted 8 June, 2020;
originally announced June 2020.
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Longitudinal spin relaxation model applied to point defect qubit systems
Authors:
Viktor Ivády
Abstract:
Controllable, partially isolated few level systems in semiconductors have recently gained multidisciplinary attention due to their widespread nanoscale sensing and quantum technology applications. Quantitative simulation of the dynamics and related applications of such systems is a challenging theoretical task that requires faithful description not only the few level systems but also their local e…
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Controllable, partially isolated few level systems in semiconductors have recently gained multidisciplinary attention due to their widespread nanoscale sensing and quantum technology applications. Quantitative simulation of the dynamics and related applications of such systems is a challenging theoretical task that requires faithful description not only the few level systems but also their local environments. Here, we develop a method that can describe relevant relaxation processes induced by a dilute bath of nuclear and electron spins. The method utilizes an extended Lindblad equation in the framework of cluster approximation of a central spin system. We demonstrate that the proposed method can accurately describe T$_1$ time of an exemplary solid-state point defect qubit system, in particular NV center in diamond, at various magnetic fields and strain.
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Submitted 17 March, 2020; v1 submitted 6 January, 2020;
originally announced January 2020.
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Ab initio theory of negatively charged boron vacancy qubit in hBN
Authors:
Viktor Ivády,
Gergely Barcza,
Gergő Thiering,
Song Li,
Hanen Hamdi,
Örs Legeza,
Jyh-Pin Chou,
Adam Gali
Abstract:
Highly correlated orbitals coupled with phonons in two-dimension are identified for paramagnetic and optically active boron vacancy in hexagonal boron nitride by first principles methods which are responsible for recently observed optically detected magnetic resonance signal. We report ab initio analysis of the correlated electronic structure of this center by density matrix renormalization group…
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Highly correlated orbitals coupled with phonons in two-dimension are identified for paramagnetic and optically active boron vacancy in hexagonal boron nitride by first principles methods which are responsible for recently observed optically detected magnetic resonance signal. We report ab initio analysis of the correlated electronic structure of this center by density matrix renormalization group and Kohn-Sham density functional theory methods. By establishing the nature of the bright and dark states as well as the position of the energy levels, we provide a complete description of the magneto-optical properties and corresponding radiative and non-radiative routes which are responsible for the optical spin polarization and spin dependent luminescence of the defect. Our findings pave the way toward advancing the identification and characterization of room temperature quantum bits in two-dimensional solids.
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Submitted 17 October, 2019;
originally announced October 2019.
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Electrically driven optical interferometry with spins in silicon carbide
Authors:
Kevin C. Miao,
Alexandre Bourassa,
Christopher P. Anderson,
Samuel J. Whiteley,
Alexander L. Crook,
Sam L. Bayliss,
Gary Wolfowicz,
Gergo Thiering,
Peter Udvarhelyi,
Viktor Ivady,
Hiroshi Abe,
Takeshi Ohshima,
Adam Gali,
David D. Awschalom
Abstract:
Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin's weak coupling to its environment bestows excellent coherence properties, but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent…
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Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin's weak coupling to its environment bestows excellent coherence properties, but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent quantum interference in the optical transition of single, basally oriented divacancies in commercially available 4H silicon carbide. By applying microwave frequency electric fields, we coherently drive the divacancy's excited-state orbitals and induce Landau-Zener-Stuckelberg interference fringes in the resonant optical absorption spectrum. Additionally, we find remarkably coherent optical and spin subsystems enabled by the basal divacancy's symmetry. These properties establish divacancies as strong candidates for quantum communication and hybrid system applications, where simultaneous control over optical and spin degrees of freedom is paramount.
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Submitted 29 May, 2019;
originally announced May 2019.
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Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
Authors:
Viktor Ivády,
Joel Davidsson,
Nguyen Tien Son,
Takeshi Ohshima,
Igor A. Abrikosov,
Adam Gali
Abstract:
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon carbide (SiC) have shown remarkable properties owing to their particular spin-3/2 ground and excited states. Although, these centers were observed decades ago, still…
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Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon carbide (SiC) have shown remarkable properties owing to their particular spin-3/2 ground and excited states. Although, these centers were observed decades ago, still two competing models, the isolated negatively charged silicon vacancy and the complex of negatively charged silicon vacancy and neutral carbon vacancy [Phys. Rev. Lett.\ \textbf{115}, 247602 (2015)] are argued as an origin. By means of high precision first principles calculations and high resolution electron spin resonance measurements, we here unambiguously identify the Si-vacancy related qubits in hexagonal SiC as isolated negatively charged silicon vacancies. Moreover, we identify the Si-vacancy qubit configurations that provide room temperature optical readout.
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Submitted 13 October, 2017; v1 submitted 21 August, 2017;
originally announced August 2017.
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First principles predictions of magneto-optical data for semiconductor defects: the case of divacancy defects in 4H-SiC
Authors:
Joel Davidsson,
Viktor Ivády,
Rickard Armiento,
N. T. Son,
Adam Gali,
Igor Abrikosov
Abstract:
Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit and single photon emitter applications. Detailed understanding of the properties of candidate defects is essential for these applications, and requires the identification of the defects microscopic configuration and electronic structure. Multi-compone…
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Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit and single photon emitter applications. Detailed understanding of the properties of candidate defects is essential for these applications, and requires the identification of the defects microscopic configuration and electronic structure. Multi-component semiconductors often host two or more non-equivalent configurations of point defects. These configurations generally exhibit similar electronic structure and basic functionalities, however, they differ in details that are of great importance whenever single defect applications are considered. Identification of non-equivalent configurations of point defects is thus essential for successful single defect manipulation and application. A promising way to identify defects is via comparison of experimental measurements and results of first-principle calculations. We investigate a possibility to produce accurate ab initio data for zero-phonon lines and hyperfine coupling parameters that are required for systematic quantum bit search. We focus on properties relevant for the possible use of the divacancy defect in quantum bits in 4H-SiC. We provide a decisive identification of divacancy configurations in 4H-SiC and clarify differences in prior predictions of 4H-SiC divacancy zero-phonon photoluminescence lines.
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Submitted 15 August, 2017;
originally announced August 2017.
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Hybrid-DFT+V$_w$ method for accurate band structure of correlated transition metal compounds: the case of cerium dioxide
Authors:
Viktor Ivády,
Adam Gali,
Igor A. Abrikosov
Abstract:
Hybrid functionals' non-local exchange-correlation potential contains a derivative discontinuity that improves on standard semi-local density functional theory (DFT) band gaps. Moreover, by careful parameterization, hybrid functionals can provide self-interaction reduced description of selected states. On the other hand, the uniform description of all the electronic states of a given system is a k…
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Hybrid functionals' non-local exchange-correlation potential contains a derivative discontinuity that improves on standard semi-local density functional theory (DFT) band gaps. Moreover, by careful parameterization, hybrid functionals can provide self-interaction reduced description of selected states. On the other hand, the uniform description of all the electronic states of a given system is a know drawback of these functionals that causes varying accuracy in the description of states with different degrees of localization. This limitation can be remedied by the orbital dependent exact exchange extension of hybrid functionals; the hybrid-DFT+V$_w$ method [V. Iv{á}dy, et al., Phys. Rev. B 90, 035146 (2014)]. Based on the analogy of quasi-particle equations and hybrid-DFT single particle equations, here we demonstrate that parameters of hybrid-DFT+V$_w$ functional can be determined from approximate quasi-particle spectra. The proposed technique leads to a reduction of self-interaction and provides improved description for both $s$ / $p$ and $d$ / $f$-electrons of the simulated system. The performance of our charge self-consistent method is illustrated on the electronic structure calculation of cerium dioxide where good agreement with both quasi-particle and experimental spectra is achieved.
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Submitted 13 June, 2017;
originally announced June 2017.
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Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
Authors:
David J. Christle,
Paul V. Klimov,
Charles F. de las Casas,
Krisztián Szász,
Viktor Ivády,
Valdas Jokubavicius,
Jawad ul Hassan,
Mikael Syväjärvi,
William F. Koehl,
Takeshi Ohshima,
Nguyen T. Son,
Erik Janzén,
Ádám Gali,
David D. Awschalom
Abstract:
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here we demonstra…
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The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here we demonstrate a high-fidelity spin-to-photon interface in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin-mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on shows promise for future quantum networks based on SiC defects.
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Submitted 25 February, 2017; v1 submitted 23 February, 2017;
originally announced February 2017.
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All-optical hyperpolarization of electron and nuclear spins in diamond
Authors:
Ben L. Green,
Ben G. Breeze,
Gregory J. Rees,
John V. Hanna,
Jyh-Pin Chou,
Viktor Ivády,
Adam Gali,
Mark E. Newton
Abstract:
Low thermal polarization of nuclear spins is a primary sensitivity limitation for nuclear magnetic resonance. Here we demonstrate optically pumped (microwave-free) nuclear spin polarization of $^{13}\mathrm{C}$ and $^{15}\mathrm{N}$ in $^{15}\mathrm{N}$-doped diamond. $^{15}\mathrm{N}$ polarization enhancements up to $-2000$ above thermal equilibrium are observed in the paramagnetic system…
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Low thermal polarization of nuclear spins is a primary sensitivity limitation for nuclear magnetic resonance. Here we demonstrate optically pumped (microwave-free) nuclear spin polarization of $^{13}\mathrm{C}$ and $^{15}\mathrm{N}$ in $^{15}\mathrm{N}$-doped diamond. $^{15}\mathrm{N}$ polarization enhancements up to $-2000$ above thermal equilibrium are observed in the paramagnetic system $\mathrm{N_s}^{0}$. Nuclear spin polarization is shown to diffuse to bulk $^{13}\mathrm{C}$ with NMR enhancements of $-200$ at room temperature and $-500$ at $\mathrm{240~K}$, enabling a route to microwave-free high-sensitivity NMR study of biological samples in ambient conditions.
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Submitted 13 February, 2017; v1 submitted 12 October, 2016;
originally announced October 2016.
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High fidelity bi-directional nuclear qubit initialization in SiC
Authors:
Viktor Ivády,
Paul V. Klimov,
Kevin C. Miao,
Abram L. Falk,
David J. Christle,
Krisztián Szász,
Igor A. Abrikosov,
David D. Awschalom,
Adam Gali
Abstract:
Dynamic nuclear polarization (DNP) is an attractive method for initializing nuclear spins that are strongly coupled to optically active electron spins because it functions at room temperature and does not require strong magnetic fields. In this Letter, we demonstrate that DNP, with near-unity polarization efficiency, can be generally realized in weakly coupled hybrid registers, and furthermore tha…
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Dynamic nuclear polarization (DNP) is an attractive method for initializing nuclear spins that are strongly coupled to optically active electron spins because it functions at room temperature and does not require strong magnetic fields. In this Letter, we demonstrate that DNP, with near-unity polarization efficiency, can be generally realized in weakly coupled hybrid registers, and furthermore that the nuclear spin polarization can be completely reversed with only sub-Gauss magnetic field variations. This mechanism offers new avenues for DNP-based sensors and radio-frequency free control of nuclear qubits.
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Submitted 31 May, 2016; v1 submitted 25 May, 2016;
originally announced May 2016.
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Dirac points with giant spin-orbit splitting in the electronic structure of two-dimensional transition-metal carbides
Authors:
Hossein Fashandi,
Viktor Ivády,
Per Eklund,
Anita Lloyd Spetz,
Mikhail I. Katsnelson,
Igor A. Abrikosov
Abstract:
Two-dimensional (2D) materials, especially their most prominent member, graphene, have greatly influenced many scientific areas. Moreover, they have become a base for investigating the relativistic properties of condensed matter within the emerging field of Dirac physics. This has ignited an intense search for new materials where charge carriers behave as massless or massive Dirac fermions. Here,…
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Two-dimensional (2D) materials, especially their most prominent member, graphene, have greatly influenced many scientific areas. Moreover, they have become a base for investigating the relativistic properties of condensed matter within the emerging field of Dirac physics. This has ignited an intense search for new materials where charge carriers behave as massless or massive Dirac fermions. Here, we theoretically show the existence of Dirac electrons in a series of 2D transition-metal carbides, known as MXenes. They possess twelve conical crossings in the 1st Brillouin zone with giant spin-orbit splitting. Our findings indicate that the 2D band structure of MXenes is protected against external perturbations and preserved even in multilayer phases. These results, together with the broad possibilities to engineer the properties of these materials phases, make Dirac MXenes a potential candidate for studying and develo** novel Dirac-physics-based technologies.
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Submitted 14 October, 2015; v1 submitted 17 June, 2015;
originally announced June 2015.
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Theoretical model of the dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide
Authors:
Viktor Ivády,
Krisztián Szász,
Abram L. Falk,
Paul V. Klimov,
David J. Christle,
Erik Janzén,
Igor A. Abrikosov,
David D. Awschalom,
Adam Gali
Abstract:
Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point defects in semiconductors is a key resource for both initializing nuclear quantum memories and producing nuclear hyperpolarization. DNP is therefore an important process in the field of quantum-information processing, sensitivity-enhanced nuclear magnetic resonance, and nuclear-spin-based spintronics. DNP based on optical pumpi…
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Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point defects in semiconductors is a key resource for both initializing nuclear quantum memories and producing nuclear hyperpolarization. DNP is therefore an important process in the field of quantum-information processing, sensitivity-enhanced nuclear magnetic resonance, and nuclear-spin-based spintronics. DNP based on optical pum** of point defects has been demonstrated by using the electron spin of nitrogen-vacancy (NV) center in diamond, and more recently, by using divacancy and related defect spins in hexagonal silicon carbide (SiC). Here, we describe a general model for these optical DNP processes that allows the effects of many microscopic processes to be integrated. Applying this theory, we gain a deeper insight into dynamic nuclear spin polarization and the physics of diamond and SiC defects. Our results are in good agreement with experimental observations and provide a detailed and unified understanding. In particular, our findings show that the defects' electron spin coherence times and excited state lifetimes are crucial factors in the entire DNP process.
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Submitted 1 September, 2015; v1 submitted 21 May, 2015;
originally announced May 2015.
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Optical polarization of nuclear spins in silicon carbide
Authors:
Abram L. Falk,
Paul V. Klimov,
Viktor Ivády,
Krisztián Szász,
David J. Christle,
William F. Koehl,
Ádám Gali,
David D. Awschalom
Abstract:
We demonstrate optically pumped dynamic nuclear polarization of 29-Si nuclear spins that are strongly coupled to paramagnetic color centers in 4H- and 6H-SiC. The 99 +/- 1% degree of polarization at room temperature corresponds to an effective nuclear temperature of 5 microKelvin. By combining ab initio theory with the experimental identification of the color centers' optically excited states, we…
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We demonstrate optically pumped dynamic nuclear polarization of 29-Si nuclear spins that are strongly coupled to paramagnetic color centers in 4H- and 6H-SiC. The 99 +/- 1% degree of polarization at room temperature corresponds to an effective nuclear temperature of 5 microKelvin. By combining ab initio theory with the experimental identification of the color centers' optically excited states, we quantitatively model how the polarization derives from hyperfine-mediated level anticrossings. These results lay a foundation for SiC-based quantum memories, nuclear gyroscopes, and hyperpolarized probes for magnetic resonance imaging.
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Submitted 26 February, 2015;
originally announced February 2015.
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Theoretical unification of hybrid-DFT and DFT+U methods for the treatment of localized orbitals
Authors:
Viktor Ivády,
Rickard Armiento,
Krisztián Szász,
Erik Janzén,
Adam Gali,
Igor A. Abrikosov
Abstract:
We formulate the on-site occupation dependent exchange correlation energy and effective potential of hybrid functionals for localized states and connect them to the on-site correction term of the DFT+U method. Our derivation provides a theoretical justification for adding a DFT+U-like onsite potential in hybrid DFT calculations to resolve issues caused by overscreening of localized states. The res…
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We formulate the on-site occupation dependent exchange correlation energy and effective potential of hybrid functionals for localized states and connect them to the on-site correction term of the DFT+U method. Our derivation provides a theoretical justification for adding a DFT+U-like onsite potential in hybrid DFT calculations to resolve issues caused by overscreening of localized states. The resulting scheme, hybrid- DFT+Vw, is tested for chromium impurity in wurtzite AlN and vanadium impurity in 4H-SiC, which are paradigm examples of systems with different degree of localization between host and impurity orbitals.
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Submitted 11 June, 2014;
originally announced June 2014.
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Electrically and mechanically tunable electron spins in silicon carbide color centers
Authors:
Abram L. Falk,
Paul V. Klimov,
Bob B. Buckley,
Viktor Ivády,
Igor A. Abrikosov,
Greg Calusine,
William F. Koehl,
Ádám Gali,
David D. Awschalom
Abstract:
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6 strain sensi…
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The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6 strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15-36%. These results establish SiC color centers as compelling systems for sensing nanoscale fields.
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Submitted 26 November, 2013;
originally announced November 2013.
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The role of screening in the density functional applied on transition metal defects in semiconductors
Authors:
V. Ivády,
I. A. Abrikosov,
E. Janzén,
A. Gali
Abstract:
We study selected transition metal related point defects in silicon and silicon carbide semiconductors by a range separated hybrid density functional (HSE06). We find that HSE06 does not fulfill the generalized Koopmans' Theorem for every defect which is due to the self-interaction error in the functional in such cases. Restoring the so-called generalized Koopmans' Condition with a simple correcti…
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We study selected transition metal related point defects in silicon and silicon carbide semiconductors by a range separated hybrid density functional (HSE06). We find that HSE06 does not fulfill the generalized Koopmans' Theorem for every defect which is due to the self-interaction error in the functional in such cases. Restoring the so-called generalized Koopmans' Condition with a simple correction in the functional can eliminate this error, and brings the calculated charge transition levels remarkably close to the experimental data as well as to the calculated quasi-particle levels from many-body perturbation theory.
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Submitted 18 January, 2013; v1 submitted 17 January, 2013;
originally announced January 2013.
