Showing 1–2 of 2 results for author: Iutzi, R M
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Defect and Temperature Dependence of Tunneling in InAs/GaSb Heterojunctions
Authors:
Ryan M. Iutzi,
Eugene A. Fitzgerald
Abstract:
Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper than the room-temperature thermal limit of 60 mV/decade. These devices also show a pronounced temperature dependence that is not characteristic of a tunneling process. Herein, we explore these aspects by studying the temper…
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Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper than the room-temperature thermal limit of 60 mV/decade. These devices also show a pronounced temperature dependence that is not characteristic of a tunneling process. Herein, we explore these aspects by studying the temperature dependence of two-terminal InAs/GaSb heterojunctions, allowing for the true nature of tunneling at the interface to be seen without convolution from other three-terminal parasitic effects such as gate oxide traps. We compare the temperature dependence of peak current, excess current, and conductance slope for InAs/GaSb interfaces with and without interface defects. We identify that the tunnel and excess currents depend on temperature and defect density and propose that the ultimate leakage current in TFETs based on these materials will be affected by defects and inhomogeneity at the interface. We determine that the conductance slope, a two-terminal analog to subthreshold slope, does not depend on temperature, contrasting sharply with the heavy temperature dependence seen in three terminal devices in literature. We propose that TFETs based on this and similar materials systems are dominated by parasitic effects such as tunneling into oxide trap states, or other parasitics that are not intrinsic to the heterojunction itself, and that in the absence of these effects, the true steepness from band-to-band tunneling is limited by defects and inhomogeneity at the interface.
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Submitted 9 March, 2015;
originally announced March 2015.
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Microstructure and Conductance-Slope of InAs/GaSb Tunnel Diodes
Authors:
Ryan M. Iutzi,
Eugene A. Fitzgerald
Abstract:
InAs/GaSb and similar materials systems have generated great interest as a heterojunction for tunnel field effect transistors (TFETs) due to favorable band alignment. However, little is currently understood about how such TFETs are affected by materials defects and nonidealities. We present measurements of the conductance slope for various InAs/GaSb heterojunctions via two-terminal electrical meas…
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InAs/GaSb and similar materials systems have generated great interest as a heterojunction for tunnel field effect transistors (TFETs) due to favorable band alignment. However, little is currently understood about how such TFETs are affected by materials defects and nonidealities. We present measurements of the conductance slope for various InAs/GaSb heterojunctions via two-terminal electrical measurements, which removes three-terminal parasitics and enables direct study on the effect of microstructure on tunnelling. Using this, we can predict how subthreshold swings in TFETs can depend on microstructure. We also demonstrate growth and electrical characterization for structures grown by metalorganic chemical vapor deposition (MOCVD) - a generally more scalable process compared to molecular beam epitaxy (MBE). We determine that misfit dislocations and point defects near the interface can lead to energy states in the band-gap and local band bending that result in trap-assisted leakage routes and nonuniform band alignment across the junction area that lower the steepness of the conductance slope. Despite the small lattice mismatch, misfit dislocations still form in InAs on GaSb due to relaxation as a result of large strain from intermixed compositions. This can be circumvented by growing GaSb on InAs, straining the GaSb underlayer, or lowering the InAs growth temperature in the region of the interface. The conductance slope can also be improved by annealing the samples at higher temperatures, which we believe acts to annihilate point defects and average out major fluctuations in band alignment across the interface. Using a combination of these techniques, we can greatly improve the steepness of the conductance slope which could result in steeper subthreshold swings in TFETs in the future.
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Submitted 30 June, 2014; v1 submitted 22 January, 2014;
originally announced January 2014.
