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Single-Exciton Gain and Stimulated Emission across the Infrared Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots
Authors:
Sotirios Christodoulou,
Iñigo Ramiro,
Andreas Othonos,
Alberto Figueroba,
Mariona Dalmases,
Onur Özdemir,
Santanu Pradhan,
Grigorios Itskos,
Gerasimos Konstantatos
Abstract:
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique o…
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Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique opportunity as an optical gain medium in view of their tunable bandgap, solution processability and CMOS compatibility. The 8-fold degeneracy of infrared CQDs based on Pb-chalcogenides has hindered the demonstration of low-threshold optical gain and lasing, at room temperature. We demonstrate room-temperature, infrared, size-tunable, band-edge stimulated emission with linewidth of ~14 meV. Leveraging robust electronic do** and charge-exciton interactions in PbS CQD thin films, we reach gain threshold at the single exciton regime representing a four-fold reduction from the theoretical limit of an eight-fold degenerate system, with a net modal gain in excess of 100 cm-1.
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Submitted 21 September, 2021;
originally announced September 2021.
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Air-stable, earth-abundant molten chlorides and corrosion-resistant containment for chemically-robust, high-temperature thermal energy storage for concentrated solar power
Authors:
Adam S. Caldwell,
Grigorios Itskos,
Kenneth H. Sandhage
Abstract:
A dramatic reduction in man-made CO2 emissions could be achieved if the cost of electricity generated from concentrated solar power (CSP) plants could become competitive with fossil-fuel-derived electricity. The solar heat-to-electricity conversion efficiency of CSP plants may be significantly increased (and the associated electricity cost decreased) by operating CSP turbines with inlet temperatur…
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A dramatic reduction in man-made CO2 emissions could be achieved if the cost of electricity generated from concentrated solar power (CSP) plants could become competitive with fossil-fuel-derived electricity. The solar heat-to-electricity conversion efficiency of CSP plants may be significantly increased (and the associated electricity cost decreased) by operating CSP turbines with inlet temperatures >750 C instead of <550 C, and by using thermal energy storage (TES) at >750 C to allow for rapidly dispatchable and/or continuous electricity production. Unfortunately, earth-abundant MgCl2-KCl-based liquids currently being considered as low-cost media for large-scale, high-temperature TES are susceptible to oxidation in air, with associated undesired changes in liquid composition and enhanced corrosion of metal alloys in pipes and tanks containing such liquids. In this paper, alternative high-temperature, earth-abundant molten chlorides that are stable in air are identified via thermodynamic calculations. The oxidation resistance, and corrosion-resistant containment, of such molten chlorides at 750 C are then demonstrated. Such chemically-robust, low-cost TES media and effective containment provide critical advances towards the higher-temperature operation of, and lower-cost electricity generation from, CSP plants.
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Submitted 23 October, 2020;
originally announced October 2020.
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Single-Exciton Gain and Stimulated Emission Across the Infrared Optical Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots
Authors:
Sotirios Christodoulou,
Iñigo Ramiro,
Andreas Othonos,
Alberto Figueroba,
Mariona Dalmases,
Onur Özdemir,
Santanu Pradhan,
Grigorios Itskos,
Gerasimos Konstantatos
Abstract:
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a uni…
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Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique opportunity as an optical gain medium4 in view of their tunable bandgap, solution processability and CMOS compatibility. Their potential for narrower linewidths5 and the lower-than-bulk degeneracy6 has led to dramatic progress towards successful demonstration of optical gain4, stimulated emission7 and lasing8,9,10 in the visible part of spectrum utilizing CdSe-based CQDs. Infrared Pb-chalcogenide colloidal quantum dots however exhibit higher state degeneracy and as a result the demonstration of optical gain has imposed very high thresholds.11,12 Here we demonstrate room-temperature, infrared stimulated emission, tunable across the optical communication band, based on robust electronically doped PbS CQDs, that reach gain threshold at the single exciton regime, representing a four-fold reduction from the theoretical limit of an eight-fold degenerate system and two orders of magnitude lower than prior reports.
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Submitted 10 August, 2019;
originally announced August 2019.
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The influence of additives in the stoichiometry of hybrid lead halide perovskites
Authors:
Ignasi Burgués-Ceballos,
Achilleas Savva,
Efthymios Georgiou,
Konstantinos Kapnisis,
Paris Papagiorgis,
Androniki Mousikou,
Grigorios Itskos,
Andreas Othonos,
Stelios A Choulis
Abstract:
We investigate the employment of carefully selected solvent additives in the processing of a commercial perovskite precursor ink and analyze their impact on the performance of organometal trihalide perovskite photovoltaic devices. We provide evidence that the use of benzaldehyde can be used as an effective method to preserve the stoichiometry of the perovskite precursors in solution. Benzaldehyde…
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We investigate the employment of carefully selected solvent additives in the processing of a commercial perovskite precursor ink and analyze their impact on the performance of organometal trihalide perovskite photovoltaic devices. We provide evidence that the use of benzaldehyde can be used as an effective method to preserve the stoichiometry of the perovskite precursors in solution. Benzaldehyde based additive engineering shows to improve perovskite solid state film morphology and device performance of trihalide perovskite based solar cells.
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Submitted 19 July, 2018;
originally announced July 2018.
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Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
Authors:
A. T. Hanbicki,
O. M. J. van t Erve,
R. Magno,
G. Kioseoglou,
C. H. Li,
B. T. Jonker,
G. Itskos,
R. Mallory,
M. Yasar,
A. Petrou
Abstract:
Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step tunneling is the dominant transport mechanism. The current-voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and…
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Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step tunneling is the dominant transport mechanism. The current-voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like longitudinal-optical phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses indicating that tunneling enables significant spin injection from a metal into a semiconductor.
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Submitted 11 February, 2003;
originally announced February 2003.
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Reduction Of Spin Injection Efficiency by Interface Spin Scattering
Authors:
R. M. Stroud,
A. T. Hanbicki,
Y. D. Park,
A. G. Petukhov,
B. T. Jonker,
G. Itskos,
G. Kioseoglou,
M. Furis,
A. Petrou
Abstract:
We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering.…
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We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering. An inverse correlation between spin-polarized electron injection efficiency and interface defect density is demonstrated for ZnMnSe/AlGaAs-GaAs spin-LEDs with spin injection efficiencies of 0 to 85%.
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Submitted 26 October, 2001;
originally announced October 2001.
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Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
Authors:
Aubrey T. Hanbicki,
B. T. Jonker,
G. Itskos,
G. Kioseoglou,
A. Petrou
Abstract:
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circu…
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We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency. This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology.
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Submitted 28 January, 2002; v1 submitted 2 October, 2001;
originally announced October 2001.
