Showing 1–7 of 7 results for author: Itie, J -

Vibrational and mechanical properties of the highly mismatched (Cd,Be)Te semiconductor alloy : Experiment and ab initio calculations

Authors: A. Elmahjoubi, M. B. Shoker, O. Pages, V. J. B. Torres, A. Polian, A. V. Postnikov, C. Bellin, K. Beneut, C. Gardiennet, G. Kervern, A. EnNaciri, L. Broch, R. Hajj Hussein, J. -P. Itie, L. Nataf, S. Ravy, P. Franchetti, S. Diliberto, S. Michel, A. Abouais, K. Strzalkowski

Abstract: The (Cd, Be)Te semiconductor alloy that exhibits a dramatic mismatch in bond covalency and stiffness clarifying its vibrational and mechanical properties is used as a benchmark to test the limits of the percolation model (PM) worked out to explain the complex Raman spectra of the related but less contrasted (Zn, Be) chalcogenides. The test is done by way of experiment (x smaller than 0.11) combini… ▽ More The (Cd, Be)Te semiconductor alloy that exhibits a dramatic mismatch in bond covalency and stiffness clarifying its vibrational and mechanical properties is used as a benchmark to test the limits of the percolation model (PM) worked out to explain the complex Raman spectra of the related but less contrasted (Zn, Be) chalcogenides. The test is done by way of experiment (x smaller than 0.11) combining Raman scattering with X ray diffraction at high pressure and ab initio calculations (x around 0, 0.5 and 1). The (macroscopic) bulk modulus B drops below the CdTe value on minor Be incorporation, at variance with a linear B versus x increase predicted ab initio, thus hinting at large anharmonic effects in the real crystal. Yet, no anomaly occurs at the microscopic (bond) scale as the regular bimodal PM Raman signal predicted ab initio for the BeTe bond in minority (x around 0 and 0.5) is (barely) detected experimentally. Although at large Be content (x around 1) the same bimodal signal relaxes down to inversion, an unprecedented case, specific pressure dependencies of the regular (x around 0 and 0.5) and inverted (x around 1) BeTe Raman doublets are in line with PM predictions. Hence, the PM applies as such to (Cd, Be)Te albeit in a relaxed form, without further refinement. This enhances the scheme validity as a generic descriptor of phonons in alloys. △ Less

Submitted 3 March, 2023; originally announced March 2023.

Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition

Authors: M. B. Shoker, O. Pagès, V. J. B. Torres, A. Polian, J. -P. Itié, G. K. Pradhan, C. Narayana, M. N. Rao, R. Rao, C. Gardiennet, G. Kervern, K. Strzałkowski, F. Firszt

Abstract: The generic 1-bond:2-mode percolation type Raman signal inherent to the short bond of common (A,B)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive mesoscope to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale with a focus on ZnCdSe. The Raman doublet, that distinguishes… ▽ More The generic 1-bond:2-mode percolation type Raman signal inherent to the short bond of common (A,B)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive mesoscope to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale with a focus on ZnCdSe. The Raman doublet, that distinguishes between the AC- and BC-like environments of the short bond, is reactive to pressure: either it closes (ZnBeSe, ZnSeS) or it opens (ZnCdSe), depending on the hardening rates of the two environments under pressure. A partition of II-VI and III-V mixed crystals is accordingly outlined. Of special interest is the closure case, in which the system resonantly stabilizes ante transition at its exceptional point corresponding to a virtual decoupling, by overdam**, of the two oscillators forming the Raman doublet. At this limit, the chain-connected bonds of the short species (taken as the minor one) freeze along the chain into a rigid backbone. This reveals a capacity behind alloying to reduce the thermal conductivity. △ Less

Submitted 17 August, 2020; originally announced August 2020.

Magnetovolume effect, macroscopic hysteresis and moment collapse in the paramagnetic state of cubic MnGe under pressure

Authors: N. Martin, I. Mirebeau, M. Deutsch, J. -P. Itié, J. -P. Rueff, U. K. Rössler, K. Koepernik, L. N. Fomicheva, A. V. Tsvyashchenko

Abstract: Itinerant magnets generally exhibit pressure induced transitions towards non magnetic states. Using synchrotron based X-ray diffraction and emission spectroscopy, the evolution of the lattice and spin moment in the chiral magnet MnGe was investigated in the paramagnetic state and under pressures up to 38 GPa. The collapse of spin-moment takes place in two steps. A first-order transition with a hug… ▽ More Itinerant magnets generally exhibit pressure induced transitions towards non magnetic states. Using synchrotron based X-ray diffraction and emission spectroscopy, the evolution of the lattice and spin moment in the chiral magnet MnGe was investigated in the paramagnetic state and under pressures up to 38 GPa. The collapse of spin-moment takes place in two steps. A first-order transition with a huge hysteresis around 7 GPa transforms the system from the high-spin at ambient pressure to a low-spin state. The coexistence of spin-states and observation of history-depending irreversibility is explained as effect of long-range elastic strains mediated by magnetovolume coupling. Only in a second transition, at about 23 GPa, the spin-moment collapses. △ Less

Submitted 20 January, 2016; originally announced January 2016.

Comments: 10 pages, 9 figures, includes supplement

Journal ref: Phys. Rev. B 93, 214404 (2016)

Stability of the Ni sites across the pressure-induced metallization in YNiO3

Authors: A. Y. Ramos, C. Piamonteze, H. C. N. Tolentino, O. Bunau, Y. Joly, S. Grenier, J. -P. Itie, N. E. Massa, J. A. Alonso, M. J. Martinez-Lope

Abstract: The local environment of nickel atoms in Y NiO3 across the pressure- induced insulator to metal (IM) transition was studied using X-ray absorption spectroscopy (XAS) supported by ab initio calculations. The monotonic contraction of the NiO6 units under applied pressure observed up to 13 GPa, stops in a limited pressure domain around 14 GPa, before resuming above 16 GPa. In this narrow pressure ran… ▽ More The local environment of nickel atoms in Y NiO3 across the pressure- induced insulator to metal (IM) transition was studied using X-ray absorption spectroscopy (XAS) supported by ab initio calculations. The monotonic contraction of the NiO6 units under applied pressure observed up to 13 GPa, stops in a limited pressure domain around 14 GPa, before resuming above 16 GPa. In this narrow pressure range, crystallographic modifications basically occur in the medium/long range, not in the NiO6 octahedron, whereas the evolution of the near-edge XAS features can be associated to metallization. Ab initio calculations show that these features are related to medium range order, provided that the Ni-O-Ni angle enables a proper overlap of the Ni eg and O 2p orbitals. Metallization is then not directly related to modifications in the average local geometry of the NiO6 units but more likely to an inter-octahedra rearrangement. These outcomes provides evidences of the bandwidth driven nature of the IM transition. △ Less

Submitted 19 December, 2011; originally announced December 2011.

Comments: 6 pages with figures

Evolution of the electronic structure of a Mott system across its phase diagram: an X-ray absorption spectroscopy study of (V(1-x)Crx)2O3

Authors: F. Rodolakis, J. -P. Rueff, M. Sikora, I. Alliot, J. -P. Itié, F. Baudelet, S. Ravy, P. Wzietek, P. Hansmann, A. Toschi, M. W. Haverkort, G. Sangiovanni, K. Held, P. Metcalf, M. Marsi

Abstract: V2O3 is an archetypal system for the study of correlation induced, Mott-Hubbard metal-insulator transitions. Despite decades of extensive investigations, the accurate description of its electronic properties remains an open problem in the physics of strongly correlated materials, also because of the lack of detailed experimental data on its electronic structure over the whole phase diagram. We pre… ▽ More V2O3 is an archetypal system for the study of correlation induced, Mott-Hubbard metal-insulator transitions. Despite decades of extensive investigations, the accurate description of its electronic properties remains an open problem in the physics of strongly correlated materials, also because of the lack of detailed experimental data on its electronic structure over the whole phase diagram. We present here a high resolution X-ray absorption spectroscopy study at the V K-edge of (V(1-x)Crx)2O3 to probe its electronic structure as a function of temperature, do** and pressure, providing an accurate picture of the electronic changes over the whole phase diagram. We also discuss the relevance of the parallel evolution of the lattice parameters, determined with X-ray diffraction. This allows us to draw two conclusions of general interest: first, the transition under pressure presents peculiar properties, related to a more continuous evolution of the lattice and electronic structure; second, the lattice mismatch is a good parameter describing the strength of the first order transition, and is consequently related to the tendency of the system towards the coexistence of different phases. Our results show that the evolution of the electronic structure while approaching a phase transition, and not only while crossing it, is also a key element to unveil the underlying physical mechanisms of Mott materials . △ Less

Submitted 19 October, 2011; originally announced October 2011.

Journal ref: Phys. Rev. B 84, 245113 (2011)

A Microscopic View on the Mott transition in Chromium-doped V2O3

Authors: S. Lupi, L. Baldassarre, B. Mansart, A. Perucchi, A. Barinov, P. Dudin, E. Papalazarou, F. Rodolakis, J. -P. Rueff, J. -P. Itié, S. Ravy, D. Nicoletti, P. Postorino, P. Hansmann, N. Parragh, A. Toschi, T. Saha-Dasgupta, O. K. Andersen, G. Sangiovanni, K. Held, M. Marsi

Abstract: V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, do** or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However th… ▽ More V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, do** or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However the spatial scale on which such transitions develop is not known in spite of their importance for research and applications. Here we unveil for the first time the MIT in Cr-doped V2O3 with submicron lateral resolution: with decreasing temperature, microscopic domains become metallic and coexist with an insulating background. This explains why the associated PM phase is actually a poor metal. The phase separation can be associated with a thermodynamic instability near the transition. This instability is reduced by pressure which drives a genuine Mott transition to an eventually homogeneous metallic state. △ Less

Submitted 8 November, 2010; v1 submitted 2 November, 2010; originally announced November 2010.

Comments: Paper plus supplementary material

Journal ref: Nature Communications 1:105 (2010)

Inequivalent routes across the Mott transition in V2O3 explored by X-ray absorption

Authors: F. Rodolakis, P. Hansmann, J. -P. Rueff, A. Toschi, M. W. Haverkort, G. Sangiovanni, A. Tanaka, T. Saha-Dasgupta, O. K. Andersen, K. Held, M. Sikora, I. Alliot, J. -P. Itié, F. Baudelet, P. Wzietek, P. Metcalf, M. Marsi

Abstract: The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, do** and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has been taken for granted so far, the metallic phase reached under pressure is shown to differ from the one obtained by changing do** or temperature. Using a no… ▽ More The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, do** and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has been taken for granted so far, the metallic phase reached under pressure is shown to differ from the one obtained by changing do** or temperature. Using a novel computational scheme, we relate this effect to the role and occupancy of the a1g orbitals. This finding unveils the inequivalence of different routes across the Mott transition in V2O3 △ Less

Submitted 4 January, 2010; originally announced January 2010.

Journal ref: Phys. Rev. Lett. 104, 047401 (2010)