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Unveiling the nucleation and growth of Zr oxide precipitates of internally oxidized Nb3Sn superconductors
Authors:
Jaeyel Lee,
Zugang Mao,
Dieter Isheim,
David N Seidman,
Xingchen Xu
Abstract:
We report on atomic-scale analyses of nucleation and growth of Zr oxide precipitates and the microstructural evolution of internally oxidized Nb3Sn wires for high-field superconducting magnet applications, utilizing atom probe tomography (APT), transmission electron microscopy (TEM), and first-principles calculations. APT analyses reveal that prior to interfacial reactions at Nb/Nb3Sn interfaces,…
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We report on atomic-scale analyses of nucleation and growth of Zr oxide precipitates and the microstructural evolution of internally oxidized Nb3Sn wires for high-field superconducting magnet applications, utilizing atom probe tomography (APT), transmission electron microscopy (TEM), and first-principles calculations. APT analyses reveal that prior to interfacial reactions at Nb/Nb3Sn interfaces, Zr atoms in an unreacted Nb-1Zr-4Ta (at.%) alloy form clusters with O atoms owing to their high affinity for oxygen and are segregated at grain boundaries (GBs) in the Nb grains. Then, nucleation of Zr oxide precipitates occurs in Nb3Sn and at Nb3Sn/Nb interfaces, driven by the small solubility of Zr and O in Nb3Sn compared to Nb. Quantitative APT and TEM analyses of Zr oxide precipitates in Nb3Sn layers demonstrate the nucleation, growth, and coarsening processes of Zr oxide precipitates in Nb3Sn layers. A high number density of Zr oxide nanoprecipitates is observed in the Nb3Sn layers, ~10^23 per m^3, with a mean precipitate diam. <10 nm at 625 oC and 700 oC, which provide pinning centers for grain refinement of Nb3Sn, <100 nm diam., and serve as pinning sites for fluxons. First-principles calculations and classical nucleation theory are employed to describe the nucleation of Zr oxide precipitates in Nb3Sn: energy barriers and the critical radius for nucleation of Zr oxide precipitates in Nb3Sn. Our research yields the kinetic pathways for nucleation and growth of Zr oxide precipitates and the microstructural evolution of Nb3Sn layers, which helps to improve the fabrication process of internally oxidized Nb3Sn wires for high-field superconducting magnets.
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Submitted 2 August, 2023; v1 submitted 19 June, 2023;
originally announced June 2023.
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Nanosized Monoatomic Palladium Metallic Glass
Authors:
Dong Sheng He,
Yi Huang,
Benjamin D. Myers,
Dieter Isheim,
Xinyu Fan,
Yunsheng Deng,
Lin Xie,
Shaobo Han,
Yang Qiu,
Li Huang,
Vinayak P. Dravid,
Jiaqing He
Abstract:
Physically vitrifying single-element metallic glass requires ultrahigh cooling rates, which are still unachievable for most of the closest-packed metals. Here, we report a facile synthetic strategy for creating mono-atomic palladium metallic glass nanoparticles with a purity of 99.35 +/- 0.23 at% from palladium-silicon liquid droplets using a cooling rate below 1000 K/s. In-situ environmental tran…
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Physically vitrifying single-element metallic glass requires ultrahigh cooling rates, which are still unachievable for most of the closest-packed metals. Here, we report a facile synthetic strategy for creating mono-atomic palladium metallic glass nanoparticles with a purity of 99.35 +/- 0.23 at% from palladium-silicon liquid droplets using a cooling rate below 1000 K/s. In-situ environmental transmission electron microscopy directly detected the leaching of silicon. Further hydrogen absorption experiment showed that this palladium metallic glass expanded little upon hydrogen uptake, exhibiting a great potential application for hydrogen separation. Our results provide insight into the formation of mono-atomic metallic glass at nanoscale.
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Submitted 4 April, 2020;
originally announced April 2020.
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Dendritic Oxide Growth in Zero-Valent Iron Nanofilms Revealed by Atom Probe Tomography
Authors:
Mavis D. Boamah,
Dieter Isheim,
Franz M. Geiger
Abstract:
Atom probe tomography (APT) analysis of chemically pure nanofilms of zero-valent iron (Fe(0), or ZVI) and their thermal oxide nano-overlayers reveals the presence of dendritic iron oxide features that extend from the oxide nano-overlayer surface into the ZVI bulk. The dendrites are observed by APT to be in the 5 nm x 10 nm size range and form quickly under natural atmospheric conditions. Their gro…
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Atom probe tomography (APT) analysis of chemically pure nanofilms of zero-valent iron (Fe(0), or ZVI) and their thermal oxide nano-overlayers reveals the presence of dendritic iron oxide features that extend from the oxide nano-overlayer surface into the ZVI bulk. The dendrites are observed by APT to be in the 5 nm x 10 nm size range and form quickly under natural atmospheric conditions. Their growth into the ZVI lalyer is, within the limit of our three-month long study, self-limiting (i.e. their initial growth appears to quickly discontinue). The atomistic views presented here shed first light on the atmospheric corrosion process of Fe(0)-bearing engineered nanostructures and their surfaces in the limit of low bulk impurities. Possible roles of the newly identified oxidized iron dendrites are also discussed in the context of passivation processes limiting technological applications of Fe(0).
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Submitted 26 November, 2018; v1 submitted 13 September, 2018;
originally announced September 2018.
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Atomic Order in Non-Equilibrium Silicon-Germanium-Tin Semiconductors
Authors:
S. Mukherjee,
N. Kodali,
D. Isheim,
S. Wirths,
J. M. Hartmann,
D. Buca,
D. N. Seidman,
O. Moutanabbir
Abstract:
The precise knowledge of the atomic order in monocrystalline alloys is fundamental to understand and predict their physical properties. With this perspective, we utilized laser-assisted atom probe tomography to investigate the three-dimensional distribution of atoms in non-equilibrium epitaxial Sn-rich group IV SiGeSn ternary semiconductors. Different atom probe statistical analysis tools includin…
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The precise knowledge of the atomic order in monocrystalline alloys is fundamental to understand and predict their physical properties. With this perspective, we utilized laser-assisted atom probe tomography to investigate the three-dimensional distribution of atoms in non-equilibrium epitaxial Sn-rich group IV SiGeSn ternary semiconductors. Different atom probe statistical analysis tools including frequency distribution analysis, partial radial distribution functions, and nearest neighbor analysis were employed in order to evaluate and compare the behavior of the three elements to their spatial distributions in an ideal solid solution. This atomistic-level analysis provided clear evidence of an unexpected repulsive interaction between Sn and Si leading to the deviation of Si atoms from the theoretical random distribution. This departure from an ideal solid solution is supported by first principal calculations and attributed to the tendency of the system to reduce its mixing enthalpy throughout the layer-by-layer growth process.
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Submitted 4 February, 2017;
originally announced February 2017.
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Direct Measurement of 2D and 3D Interprecipitate Distance Distributions from Atom-Probe Tomographic Reconstructions
Authors:
Richard A. Karnesky,
Dieter Isheim,
David N. Seidman
Abstract:
Edge-to-edge interprecipitate distance distributions are critical for predicting precipitation strengthening of alloys and other physical phenomena. A method to calculate this 3D distance and the 2D interplanar distance from atom-probe tomographic data is presented. It is applied to nanometer-sized Cu-rich precipitates in an Fe-1.7 at.% Cu alloy. Experimental interprecipitate distance distributi…
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Edge-to-edge interprecipitate distance distributions are critical for predicting precipitation strengthening of alloys and other physical phenomena. A method to calculate this 3D distance and the 2D interplanar distance from atom-probe tomographic data is presented. It is applied to nanometer-sized Cu-rich precipitates in an Fe-1.7 at.% Cu alloy. Experimental interprecipitate distance distributions are discussed.
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Submitted 30 April, 2007;
originally announced May 2007.
