Self-regulated growth of candidate topological superconducting parkerite by molecular beam epitaxy
Authors:
Jason Lapano,
Yun-Yi Pai,
Alessandro Mazza,
Jie Zhang,
Tamara Isaacs-Smith,
Patrick Gemperline,
Lizhi Zhang,
Haoxiang Li,
Ho Nyung Lee,
Hu Miao,
Gyula Eres,
Mina Yoon,
Ryan Comes,
T. Zac Ward,
Benjamin J. Lawrie,
Michael McGuire,
Robert G. Moore,
Christopher T. Nelson,
Andrew May,
Matthew Brahlek
Abstract:
Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they remain largely unexplored as high-quality epitaxial thin films. Here, we report the self-regulated growth of thin films of the strong spin-orbit coupled supercon…
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Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they remain largely unexplored as high-quality epitaxial thin films. Here, we report the self-regulated growth of thin films of the strong spin-orbit coupled superconductor Pd3Bi2Se2 on SrTiO3 by molecular beam epitaxy. Films are found to grow in a self-regulated fashion, where, in excess Se, the temperature and relative flux ratio of Pd to Bi controls the formation of Pd3Bi2Se2 due to the combined volatility of Bi, Se, and Bi-Se bonded phases. The resulting films are shown to be of high structural quality, the stoichiometry is independent of the Pd:Bi and Se flux ratio and exhibit a superconducting transition temperature of 800 mK and critical field of 17.7 +/- 0.5 mT, as probed by transport as well as magnetometry. Understanding and navigating the growth of the chemically and structurally diverse classes of ternary chalcogenides opens a vast space for discovering new phenomena as well as enabling new applications.
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Submitted 25 October, 2021; v1 submitted 14 July, 2021;
originally announced July 2021.
Impact of 150keV and 590keV proton irradiation on monolayer MoS2
Authors:
Burcu Ozden,
Ethan Khan,
Sunil Uprety,
Tianyi Zhang,
Joseph Razon,
Ke Wang,
Tamara Isaacs-Smith,
Minseo Park,
Mauricio Terrones
Abstract:
We present a comprehensive study on the effects of proton irradiation at different energies (150 and 590 keV) with the fluence of 1x 1012 proton/cm2 on monolayer MoS2. This study not only improves our understanding of the influence of high-energy proton beams on MoS2 but also has implications for radiation-induced changes in device processing and engineering of devices from multilayer MoS2 startin…
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We present a comprehensive study on the effects of proton irradiation at different energies (150 and 590 keV) with the fluence of 1x 1012 proton/cm2 on monolayer MoS2. This study not only improves our understanding of the influence of high-energy proton beams on MoS2 but also has implications for radiation-induced changes in device processing and engineering of devices from multilayer MoS2 starting material. Increasing defect density with decreasing proton irradiation energy was observed from photoluminescence spectroscopy study. These defects are attributed to sulfur vacancies observed through x-ray photoelectron spectroscopy analysis and confirmed by transmission electron microscope imaging. Scanning electron microscopy images showed the creation of grain boundaries after proton irradiation. A higher degree of surface deformation was detected with lower irradiation energies through atomic force microscopy. Inter-defect distance is increased with the increase in proton energy irradiation as estimated by transmission electron microscopy imaging. Raman spectroscopy reveals negligible structural changes in the crystal quality after the irradiation. These deformation damages due to proton irradiation are insignificant at the MoS2 layer. Based on the overall influence of low energy proton irradiation on the material characteristics, ML-MoS2 materials can be considered robust and reliable building blocks for 2D material based devices for space applications.
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Submitted 11 August, 2020;
originally announced August 2020.
