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A surface-patterned chip as a strong source of ultra-cold atoms for quantum technologies
Authors:
C. C. Nshii,
M. Vangeleyn,
J. P. Cotter,
P. F. Griffin,
E. A. Hinds,
C. N. Ironside,
P. See,
A. G. Sinclair,
E. Riis,
A. S. Arnold
Abstract:
Laser cooled atoms are central to modern precision measurements. They are also increasingly important as an enabling technology for experimental cavity quantum electrodynamics, quantum information processing and matter wave interferometry. Although significant progress has been made in miniaturising atomic metrological devices, these are limited in accuracy by their use of hot atomic ensembles and…
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Laser cooled atoms are central to modern precision measurements. They are also increasingly important as an enabling technology for experimental cavity quantum electrodynamics, quantum information processing and matter wave interferometry. Although significant progress has been made in miniaturising atomic metrological devices, these are limited in accuracy by their use of hot atomic ensembles and buffer gases. Advances have also been made in producing portable apparatus that benefit from the advantages of atoms in the microKelvin regime. However, simplifying atomic cooling and loading using microfabrication technology has proved difficult. In this letter we address this problem, realising an atom chip that enables the integration of laser cooling and trap** into a compact apparatus. Our source delivers ten thousand times more atoms than previous magneto-optical traps with microfabricated optics and, for the first time, can reach sub-Doppler temperatures. Moreover, the same chip design offers a simple way to form stable optical lattices. These features, combined with the simplicity of fabrication and the ease of operation, make these new traps a key advance in the development of cold-atom technology for high-accuracy, portable measurement devices.
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Submitted 5 November, 2013;
originally announced November 2013.
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Modeling of a Resonant Tunneling Diode Optical Modulator
Authors:
J. J. N. Calado,
J. M. L. Figueiredo,
C. N. Ironside
Abstract:
The integration of a double barrier resonant tunneling diode within a unipolar optical waveguide provides electrical gain over a wide bandwidth. Due to the non-linearities introduced by the double barrier resonant tunneling diode an unipolar InGaAlAs/InP optical waveguide can be employed both as optical modulator and optical detector. The modeling results of a device operating as optical modulat…
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The integration of a double barrier resonant tunneling diode within a unipolar optical waveguide provides electrical gain over a wide bandwidth. Due to the non-linearities introduced by the double barrier resonant tunneling diode an unipolar InGaAlAs/InP optical waveguide can be employed both as optical modulator and optical detector. The modeling results of a device operating as optical modulator agree with preliminary experimental data, foreseeing for an optimized device modulation depths up to 23 dB with chirp parameter between -1 and 0 in the wavelength range analyzed (1520 nm - 1600 nm).
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Submitted 1 April, 2005;
originally announced April 2005.
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Optical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a InGaAs/AlAs resonant tunnelling diode
Authors:
J. M. L. Figueiredo,
A. R. Boyd,
C. R. Stanley,
C. N. Ironside,
S. G. McMeekin,
A. M. P. Leite
Abstract:
We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band-edge to longer wavelengths via the Franz-Keldysh effect, thus changing the light-gu…
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We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band-edge to longer wavelengths via the Franz-Keldysh effect, thus changing the light-guiding characteristics of the waveguide. Low-frequency characterisation of a device shows modulation up to 28 dB at 1565 nm. When dc biased close to the negative differential conductance (NDC) region, the RTD optical waveguide behaves as an electro-absorption modulator integrated with a wide bandwidth electrical amplifier, offering a potential advantage over conventional pn modulators.
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Submitted 17 March, 2005; v1 submitted 17 March, 2005;
originally announced March 2005.
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Optical modulation in a resonant tunneling relaxation oscillator
Authors:
J. M. L. Figueiredo,
C. R. Stanley,
A. R. Boyd,
C. N. Ironside
Abstract:
We report high speed optical modulation in a resonant tunneling relaxation oscillator consisting of a resonant tunneling diode (RTD) integrated with a unipolar optical waveguide and incorporated in a package with a coplanar waveguide transmission line. When appropriately biased, the RTD can provide wide-bandwidth electrical gain. For wavelengths near the material band-edge, small changes of the…
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We report high speed optical modulation in a resonant tunneling relaxation oscillator consisting of a resonant tunneling diode (RTD) integrated with a unipolar optical waveguide and incorporated in a package with a coplanar waveguide transmission line. When appropriately biased, the RTD can provide wide-bandwidth electrical gain. For wavelengths near the material band-edge, small changes of the applied voltage give rise to large, high-speed electro-absorption modulation of the light. We have observed optical modulation at frequencies up to 14 GHz, associated with sub harmonic injection locking of the RTD oscillation at the fundamental mode of the coplanar transmission line, as well as generation of 33 ps optical pulses due to relaxation oscillation.
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Submitted 16 March, 2005;
originally announced March 2005.
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Ultra-low voltage resonant tunnelling diode electroabsorption modulator
Authors:
J. M. L. Figueiredo,
C. N. Ironside,
C. R. Stanley
Abstract:
Embedding a double barrier resonant tunnelling diode (RTD) in an unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD within the waveguide core introduces high non-linearity and negative differential resistance in the current-voltage (I-V) characteristic of the waveguide. This…
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Embedding a double barrier resonant tunnelling diode (RTD) in an unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD within the waveguide core introduces high non-linearity and negative differential resistance in the current-voltage (I-V) characteristic of the waveguide. This makes the electric field distribution across the waveguide core strongly dependent on the bias voltage: when the current decreases from the peak to the valley there is an increase of the electric field across the depleted core. The electric field enhancement in the core-depleted layer causes the Franz-Keldysh absorption band-edge to red shift, which is responsible for the electroabsorption effect. High frequency ac signals as low as 100 mV can induce electric field high speed switching, producing substantial light modulation (up to 15 dB) at photon energies slightly lower than the waveguide core band-gap energy. The key difference between this device and conventional p-i-n EAMs is that the tunnelling characteristics of the RTD are employed to switch the electric field across the core depleted region; the RTDEAM has in essence an integrated electronic amplifier and therefore requires considerably less switching power.
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Submitted 11 March, 2005;
originally announced March 2005.
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Electric field switching in a resonant tunneling diode electroabsorption modulator
Authors:
J. M. L. Figueiredo,
C. N. Ironside,
C. R. Stanley
Abstract:
The basic mechanism underlying electric field switching produced by a resonant tunnelling diode (RTD) is analysed and the theory compared with experimental results; agreement to within 12% is achieved. The electro-absorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient…
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The basic mechanism underlying electric field switching produced by a resonant tunnelling diode (RTD) is analysed and the theory compared with experimental results; agreement to within 12% is achieved. The electro-absorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz-Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28 dB optical modulation in a 200 um active length device. The advantage of the RTD-EAM, over the conventional reversed biased pn junction EAM, is that the RTD-EAM has in essence an integrated electronic amplifier and therefore requires considerably less switching power.
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Submitted 11 March, 2005;
originally announced March 2005.
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A quantum coherent approach to transport and noise in double barrier resonant diodes: shot noise a way to distinguish coherent from sequential tunneling
Authors:
V. Ya. Aleshkin,
L. Reggiani,
N. V. Alkeev,
V. E. Lyubchenko,
C. N. Ironside,
J. M. L. Figueiredo,
C. R. Stanley
Abstract:
We implement a quantum approach which includes long range Coulomb interaction and investigate current voltage characteristics and shot noise in double barrier resonant diodes. Theory applies to the region of low applied voltages up to the region of the current peak and considers the wide temperature range from zero to room temperature. The shape of the current voltage characteristic is well repr…
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We implement a quantum approach which includes long range Coulomb interaction and investigate current voltage characteristics and shot noise in double barrier resonant diodes. Theory applies to the region of low applied voltages up to the region of the current peak and considers the wide temperature range from zero to room temperature. The shape of the current voltage characteristic is well reproduced and we confirm that even in the presence of Coulomb interaction shot noise can be suppressed with a Fano factor well below the value of 0.5. This feature is a signature of coherent tunnelling since the standard sequential tunnelling predicts in general a Fano factor equal to or greater than the value 0.5. This giant suppression is a consequence of Pauli principle as well as long range Coulomb interaction. The theory generalizes previous findings and is compared with experiments.
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Submitted 11 December, 2003; v1 submitted 3 April, 2003;
originally announced April 2003.
