Showing 1–9 of 9 results for author: Irmscher, K

Fingerprints of carbon defects in vibrational spectra of gallium nitride (GaN) consider-ing the isotope effect

Authors: I. Gamov, J. L. Lyons, G. Gärtner, K. Irmscher, E. Richter, M. Weyers, M. R. Wagner, M. Bickermann

Abstract: This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) do** in the range of concentrations from $3.2*10^{17}$ to $3.5*10^{19} cm^{-3}$. 14 unique vibrational modes of defects are observed in GaN samples grown by hydride vapor phase epitaxy (HVPE) and then compared with… ▽ More This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) do** in the range of concentrations from $3.2*10^{17}$ to $3.5*10^{19} cm^{-3}$. 14 unique vibrational modes of defects are observed in GaN samples grown by hydride vapor phase epitaxy (HVPE) and then compared with defect properties predicted from first-principles calculations. The vibrational frequency shift in two $^{13}C$ enriched samples related to the effect of the isotope mass indicates six distinct configurations of the carbon-containing point defects. The effect of the isotope replacement is well reproduced by the density functional theory (DFT) calculations. Specific attention is paid to the most pronounced defects, namely tri-carbon complexes($C_N=C=C_N$) and carbon substituting for nitrogen $C_N$. The position of the transition level (+/0) in the bandgap found for $C_N=C=C_N$ defects by DFT at 1.1 eV above the valence band maximum, suggest that $(C_N=C=C_N)^+$ provides compensation of ${C_N}^-$. $C_N=C=C_N$ defects are observed to be prominent, yet have high formation energies in DFT calculations. Regarding ${C_N}$ defects, it is shown that the host Ga and N atoms are involved in the defect's delocalized vibrations and significantly affect the isotopic frequency shift. Much more faint vibrational modes are found from di-atomic carbon-carbon and carbon-hydrogen (C-H) complexes. Also, we note changes of vibrational mode intensities of $C_N$, $C_N=C=C_N$, C-H, and $C_N-C_i$ defects in the IR absorption spectra upon irradiation in the defect-related UV/visible absorption range. Finally, it is demonstrated that the resonant enhancement of the Raman process in the range of defect absorption above 2.5 eV enables the detection of defects at carbon do** concentrations as low as $3.2*10^{17} cm^{-3}$. △ Less

Submitted 22 September, 2022; originally announced September 2022.

Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC

Authors: Mathias Schubert, Sean Knight, Steffen Richter, Philipp Kühne, Vallery Stanishev, Alexander Ruder, Megan Stokey, Rafal Korlacki, Klaus Irmscher, Petr Neugebauer, Vanya Darakchieva

Abstract: We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of the field and frequency dependencies of the magnetic response due to the spin transitions associated with the nitrogen defect in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency paramete… ▽ More We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of the field and frequency dependencies of the magnetic response due to the spin transitions associated with the nitrogen defect in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency parameters, and does not require field or frequency modulation. We investigate spin transitions of hexagonal ($h$) and cubic ($k$) coordinated nitrogen including coupling with its nuclear spin (I=1), and we propose a model approach for the magnetic susceptibility to account for the spin transitions. From the THz-EPR-GSE measurements we can fully determine the polarization properties of the spin transitions and we obtain $g$ and hyperfine splitting parameters using magnetic field and frequency dependent Lorentzian oscillator lineshape functions. We propose frequency-scanning THz-EPR-GSE as a new and versatile method to study properties of spins in solid state materials. △ Less

Submitted 17 January, 2022; originally announced January 2022.

Comments: 6 pages, 5 figures

A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

Authors: Wahib Aggoune, Alberto Eljarrat, Dmitrii Nabok, Klaus Irmscher, Martina Zupancic, Zbigniew Galazka, Martin Albrecht, Christoph Koch, Claudia Draxl

Abstract: Among the transparent conducting oxides, the perovskite barium stannate is most promising for various electronic applications due to its outstanding carrier mobility achieved at room temperature. However, most of its important characteristics, such as band gaps, effective masses, and absorption edge, remain controversial. Here, we provide a fully consistent picture by combining state-of-the-art {\… ▽ More Among the transparent conducting oxides, the perovskite barium stannate is most promising for various electronic applications due to its outstanding carrier mobility achieved at room temperature. However, most of its important characteristics, such as band gaps, effective masses, and absorption edge, remain controversial. Here, we provide a fully consistent picture by combining state-of-the-art {\it ab initio} methodology with forefront electron energy-loss spectroscopy and optical absorption measurements. Valence electron energy-loss spectra, featuring signals originating from band gap transitions, are acquired on defect-free sample regions of a BaSnO$_{3}$ single crystal. These high-energy-resolution measurements are able to capture also very weak excitations below the optical gap, attributed to indirect transitions. By temperature-dependent optical absorption measurements, we assess band-gap renormalization effects induced by electron-phonon coupling. Overall, we find for the effective electronic mass, the direct and the indirect gap, the optical gap, as well as the absorption onsets and spectra, excellent agreement between both experimental techniques and the theoretical many-body results, supporting also the picture of a phonon-mediated mechanism where indirect transitions are activated by phonon-induced symmetry lowering. This work demonstrates a fruitful connection between different high-level theoretical and experimental methods for exploring the characteristics of advanced materials. △ Less

Submitted 20 March, 2022; v1 submitted 17 May, 2021; originally announced May 2021.

Journal ref: Commun. Mater. 3, 12 (2022)

Optical phonon modes, static and high frequency dielectric constants, and effective electron mass parameter in cubic In$_2$O$_3$

Authors: Megan Stokey, Rafal Korlacki, Sean Knight, Alexander Ruder, Matthew Hilfiker, Zbigniew Galazka, Klaus Irmscher, Yuxuan Zhang, Hong** Zhao, Vanya Darakchieva, Mathias Schubert

Abstract: A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic ellipsometry, as well as first principle calculations. Dielectric function spectra measured on high quality, marginally electrically conductive melt grown single bulk crystals are obtained on a wavelength-by-wavelength (… ▽ More A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic ellipsometry, as well as first principle calculations. Dielectric function spectra measured on high quality, marginally electrically conductive melt grown single bulk crystals are obtained on a wavelength-by-wavelength (a.k.a. point-by-point) basis and by numerical reduction of a subtle free charge carrier Drude model contribution. A four-parameter semi-quantum model is applied to determine all sixteen pairs of infrared-active transverse and longitudinal optical phonon modes, including the high-frequency dielectric constant, $\varepsilon_{\infty}=4.05\pm 0.05$. The Lyddane-Sachs-Teller relation then gives access to the static dielectric constant, $\varepsilon_{\mathrm{DC}}=10.55\pm 0.07$. All experimental results are in excellent agreement with our density functional theory calculations and with previously reported values, where existent. We also perform optical Hall effect measurements and determine for the unintentionally doped $n$-type sample a free electron density of $n=(2.81 \pm 0.01)\times 10^{17}$~cm$^{-3}$, mobility of $μ=(112 \pm 3)$~cm$^{2}$/(Vs), and an effective mass parameter of $(0.208\pm0.006)m_e$. Density and mobility parameters compare very well with results of electrical Hall effect measurements. Our effective mass parameter, which is measured independently of any other experimental technique, represents the bottom curvature of the $Γ$ point in In$_2$O$_3$ in agreement with previous extrapolations. We use terahertz spectroscopic ellipsometry to measure the quasi-static response of In$_2$O$_3$, and our model validates the static dielectric constant obtained from the Lyddane-Sachs-Teller relation. △ Less

Submitted 29 April, 2021; originally announced April 2021.

Fingerprints of optical absorption in the perovskite LaInO$_{3}$: Insight from many-body theory and experiment

Authors: Wahib Aggoune, Klaus Irmscher, Dmitrii Nabok, Cecilia Vona, Saud Bin Anooz, Zbigniew Galazka, Martin Albrecht, Claudia Draxl

Abstract: We provide a combined theoretical and experimental study of the electronic structure and the optical absorption edge of the orthorhombic perovskite LaInO$_{3}$. Employing density-functional theory and many-body perturbation theory, we predict a direct electronic quasiparticle band gap of about 5 eV and an effective electron (hole) mass of 0.31 (0.48) m$_{0}$. We find the lowest-energy excitation a… ▽ More We provide a combined theoretical and experimental study of the electronic structure and the optical absorption edge of the orthorhombic perovskite LaInO$_{3}$. Employing density-functional theory and many-body perturbation theory, we predict a direct electronic quasiparticle band gap of about 5 eV and an effective electron (hole) mass of 0.31 (0.48) m$_{0}$. We find the lowest-energy excitation at 0.2 eV below the fundamental gap, reflecting a sizeable electron-hole attraction. Since the transition from the valence band maximum (VBM, $Γ$ point) is, however, dipole forbidden the onset is characterized by weak excitations from transitions around it. The first intense excitation appears about 0.32 eV above. Interestingly, this value coincides with an experimental value obtained by ellipsometry (4.80 eV) which is higher than the onset from optical absorption spectroscopy (4.35 eV). The latter discrepancy is attributed to the fact that the weak transitions that define the optical gap are not resolved by the ellipsometry measurement. The absorption edge shows a strong dependency on the light polarization, reflecting the character of the involved valence states. Temperature-dependent measurements show a redshift of the optical gap by about 120 meV by increasing the temperature from 5 to 300 K. Renormalization due to zero-point vibrations is extrapolated from the latter measurement to amount to 150 meV. By adding the excitonic binding energy of 0.2 eV obtained theoretically to the experimental optical absorption onset, we determine the fundamental band gap at room temperature to be 4.55 eV. △ Less

Submitted 12 January, 2021; originally announced January 2021.

Journal ref: Phys. Rev. B 103, 115105 (2021)

The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

Authors: Prashanth Gopalan, Sean Knight, Ashish Chanana, Megan Stokey, Praneeth Ranga, Michael A. Scarpulla, Sriram Krishnamoorthy, V. Darakchieva, Zbigniew Galazka, Klaus Irmscher, Andreas Fiedler, Steve Blair, Mathias Schubert, Berardi Sensale-Rodriguez

Abstract: The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c, and b,… ▽ More The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c, and b, and reciprocal lattice direction a*. No significant frequency dispersion in the real part of dielectric permittivity was observed in the measured spectral range. Our results are in excellent agreement with recent radio-frequency capacitance measurements as well as with extrapolations from recent infrared measurements of phonon mode and high frequency contributions, and close the knowledge gap for these parameters in the terahertz spectral range. Our results are important for applications of beta-Ga2O3 in high-frequency electronic devices △ Less

Submitted 6 October, 2020; originally announced October 2020.

Comments: Main Manuscript is 6 pages long with 3 figures and 1 table. The submission also contains a Supplementary Info section

Thermal conductivity of bulk In$_{2}$O$_{3}$ single crystals

Authors: Liangcai Xu, Benoit Fauqué, Zengwei Zhu, Zbigniew Galazka, Klaus Irmscher, Kamran Behnia

Abstract: The transparent semiconductor In$_{2}$O$_{3}$ is a technologically important material. It combines optical transparency in the visible frequency range and sizeable electric conductivity. We present a study of thermal conductivity of In$_{2}$O$_{3}$ crystals and find that around 20 K, it peaks to a value as high as 5,000 WK$^{-1}$m$^{-1}$, comparable to the peak thermal conductivity in silicon and… ▽ More The transparent semiconductor In$_{2}$O$_{3}$ is a technologically important material. It combines optical transparency in the visible frequency range and sizeable electric conductivity. We present a study of thermal conductivity of In$_{2}$O$_{3}$ crystals and find that around 20 K, it peaks to a value as high as 5,000 WK$^{-1}$m$^{-1}$, comparable to the peak thermal conductivity in silicon and exceeded only by a handful of insulators. The amplitude of the peak drastically decreases in presence of a type of disorder, which does not simply correlate with the density of mobile electrons. Annealing enhances the ceiling of the phonon mean free path. Samples with the highest thermal conductivity are those annealed in the presence of hydrogen. Above 100 K, thermal conductivity becomes sample independent. In this intrinsic regime, dominated by phonon-phonon scattering, the magnitude of thermal diffusivity, $D$ becomes comparable to many other oxides, and its temperature dependence evolves towards $T^{-1}$. The ratio of $D$ to the square of sound velocity yields a scattering time which obeys the expected scaling with the Planckian time. △ Less

Submitted 11 January, 2021; v1 submitted 31 August, 2020; originally announced August 2020.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. Materials 5, 014603 (2021)

Carbon do** of GaN: Proof of the formation of electrically active tri-carbon defects

Authors: Ivan Gamov, Eberhard Richter, Markus Weyers, Günter Gärtner, Klaus Irmscher, Leibniz-Institut für Kristallzüchtung, Berlin, Germany, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany, Institute of Experimental Physics, TU Bergakademie Freiberg, Freiberg, Germany

Abstract: Carbon do** is used to obtain semi-insulating GaN crystals. If the carbon do** concentration exceeds $5*10^{17}$ $cm^{-3}$, the carbon atoms increasingly form triatomic clusters. The tri-carbon defect structure is unambiguously proven by the isotope effect on the defects' local vibrational modes (LVMs) originally found in samples containing carbon of natural isotopic composition $(~99 $%… ▽ More Carbon do** is used to obtain semi-insulating GaN crystals. If the carbon do** concentration exceeds $5*10^{17}$ $cm^{-3}$, the carbon atoms increasingly form triatomic clusters. The tri-carbon defect structure is unambiguously proven by the isotope effect on the defects' local vibrational modes (LVMs) originally found in samples containing carbon of natural isotopic composition $(~99 $%$ ^{12}C, ~1$%$ ^{13}C)$ at $1679$ $cm^{-1}$ and $1718$ $cm^{-1}$. Number, spectral positions, and intensities of the LVMs for samples enriched with the $^{13}C$ isotope (~99 % and ~50 %) are consistently interpreted on the basis of the harmonic oscillator model taking into account the probability of possible isotope combinations. Including the polarization dependence of the LVM absorption, we show that the tri-carbon defects form a triatomic molecule-like structure in two crystallographically different configurations: a basal configuration with the carbon bonds near the basal plane and an axial configuration with one of the carbon bonds along the c-axis. Finally, the disappearance of the LVMs under additional below-bandgap illumination is interpreted as defect recharging, i.e. the tri-carbon defects possess at least one charge state transition level within the bandgap and contribute to optical absorption as well as to the electrical charge balance. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Crystal growth and detector performance of large size high-purity Ge crystals

Authors: Guojian Wang, Mark Amman, Hao Mei, Dongming Mei, Klaus Irmscher, Yutong Guan, Gang Yang

Abstract: High-purity germanium crystals approximately 12 cm in diameter were grown in a hydrogen atmosphere using the Czochralski method. The dislocation density of the crystals was determined to be in the range of 2000 - 4200 cm-2, which meets a requirement for use as a radiation detector. The axial and radial distributions of impurities in the crystals were measured and are discussed. A planar detector w… ▽ More High-purity germanium crystals approximately 12 cm in diameter were grown in a hydrogen atmosphere using the Czochralski method. The dislocation density of the crystals was determined to be in the range of 2000 - 4200 cm-2, which meets a requirement for use as a radiation detector. The axial and radial distributions of impurities in the crystals were measured and are discussed. A planar detector was also fabricated from one of the crystals and then evaluated for electrical and spectral performance. Measurements of gamma-ray spectra from Cs-137 and Am-241 sources demonstrate that the detector has excellent energy resolution. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Comments: 22 pages, 11 figures, Accepted for publication in Materials Science in Semiconductor Processing