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Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
Authors:
T. Moretti,
M. Milanesio,
R. Cardella,
T. Kugathasan,
A. Picardi,
I. Semendyaev,
M. Elviretti,
H. Rücker,
K. Nakamura,
Y. Takubo,
M. Togawa,
F. Cadoux,
R. Cardarelli,
L. Cecconi,
S. Débieux,
Y. Favre,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
L. Iodice,
R. Kotitsa,
C. Magliocca,
M. Nessi,
A. Pizarro-Medina,
J. Sabater Iglesias
, et al. (5 additional authors not shown)
Abstract:
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a…
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Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 x 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 x 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively.
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Submitted 21 June, 2024; v1 submitted 19 April, 2024;
originally announced April 2024.
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First Measurement of the $ν_e$ and $ν_μ$ Interaction Cross Sections at the LHC with FASER's Emulsion Detector
Authors:
FASER Collaboration,
Roshan Mammen Abraham,
John Anders,
Claire Antel,
Akitaka Ariga,
Tomoko Ariga,
Jeremy Atkinson,
Florian U. Bernlochner,
Tobias Boeckh,
Jamie Boyd,
Lydia Brenner,
Angela Burger,
Franck Cadoux,
Roberto Cardella,
David W. Casper,
Charlotte Cavanagh,
Xin Chen,
Andrea Coccaro,
Stephane Debieux,
Monica D'Onofrio,
Ansh Desai,
Sergey Dmitrievsky,
Sinead Eley,
Yannick Favre,
Deion Fellers
, et al. (80 additional authors not shown)
Abstract:
This paper presents the first results of the study of high-energy electron and muon neutrino charged-current interactions in the FASER$ν$ emulsion/tungsten detector of the FASER experiment at the LHC. A subset of the FASER$ν$ volume, which corresponds to a target mass of 128.6~kg, was exposed to neutrinos from the LHC $pp$ collisions with a centre-of-mass energy of 13.6~TeV and an integrated lumin…
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This paper presents the first results of the study of high-energy electron and muon neutrino charged-current interactions in the FASER$ν$ emulsion/tungsten detector of the FASER experiment at the LHC. A subset of the FASER$ν$ volume, which corresponds to a target mass of 128.6~kg, was exposed to neutrinos from the LHC $pp$ collisions with a centre-of-mass energy of 13.6~TeV and an integrated luminosity of 9.5 fb$^{-1}$. Applying stringent selections requiring electrons with reconstructed energy above 200~GeV, four electron neutrino interaction candidate events are observed with an expected background of $0.025^{+0.015}_{-0.010}$, leading to a statistical significance of 5.2$σ$. This is the first direct observation of electron neutrino interactions at a particle collider. Eight muon neutrino interaction candidate events are also detected, with an expected background of $0.22^{+0.09}_{-0.07}$, leading to a statistical significance of 5.7$σ$. The signal events include neutrinos with energies in the TeV range, the highest-energy electron and muon neutrinos ever detected from an artificial source. The energy-independent part of the interaction cross section per nucleon is measured over an energy range of 560--1740 GeV (520--1760 GeV) for $ν_e$ ($ν_μ$) to be $(1.2_{-0.7}^{+0.8}) \times 10^{-38}~\mathrm{cm}^{2}\,\mathrm{GeV}^{-1}$ ($(0.5\pm0.2) \times 10^{-38}~\mathrm{cm}^{2}\,\mathrm{GeV}^{-1}$), consistent with Standard Model predictions. These are the first measurements of neutrino interaction cross sections in those energy ranges.
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Submitted 19 March, 2024;
originally announced March 2024.
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Neutrino Rate Predictions for FASER
Authors:
FASER Collaboration,
Roshan Mammen Abraham,
John Anders,
Claire Antel,
Akitaka Ariga,
Tomoko Ariga,
Jeremy Atkinson,
Florian U. Bernlochner,
Tobias Boeckh,
Jamie Boyd,
Lydia Brenner,
Angela Burger,
Franck Cadoux,
Roberto Cardella,
David W. Casper,
Charlotte Cavanagh,
Xin Chen,
Andrea Coccaro,
Stephane Débieux,
Monica D'Onofrio,
Ansh Desai,
Sergey Dmitrievsky,
Sinead Eley,
Yannick Favre,
Deion Fellers
, et al. (75 additional authors not shown)
Abstract:
The Forward Search Experiment (FASER) at CERN's Large Hadron Collider (LHC) has recently directly detected the first collider neutrinos. Neutrinos play an important role in all FASER analyses, either as signal or background, and it is therefore essential to understand the neutrino event rates. In this study, we update previous simulations and present prescriptions for theoretical predictions of ne…
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The Forward Search Experiment (FASER) at CERN's Large Hadron Collider (LHC) has recently directly detected the first collider neutrinos. Neutrinos play an important role in all FASER analyses, either as signal or background, and it is therefore essential to understand the neutrino event rates. In this study, we update previous simulations and present prescriptions for theoretical predictions of neutrino fluxes and cross sections, together with their associated uncertainties. With these results, we discuss the potential for possible measurements that could be carried out in the coming years with the FASER neutrino data to be collected in LHC Run 3 and Run 4.
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Submitted 13 June, 2024; v1 submitted 20 February, 2024;
originally announced February 2024.
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Time Resolution of a SiGe BiCMOS Monolithic Silicon Pixel Detector without Internal Gain Layer with a Femtosecond Laser
Authors:
M. Milanesio,
L. Paolozzi,
T. Moretti,
A. Latshaw,
L. Bonacina,
R. Cardella,
T. Kugathasan,
A. Picardi,
M. Elviretti,
H. Rücker,
R. Cardarelli,
L. Cecconi,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
L. Iodice,
R. Kotitsa,
C. Magliocca,
M. Nessi,
A. Pizarro-Medina,
J. Sabater Iglesias,
I. Semendyaev,
J. Saidi,
M. Vicente Barreto Pinto,
S. Zambito
, et al. (1 additional authors not shown)
Abstract:
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully deplete…
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The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. At the highest frontend power density tested of 2.7 W/cm2, the time resolution with the femtosecond laser pulses was found to be 45 ps for signals generated by 1200 electrons, and 3 ps in the case of 11k electrons, which corresponds approximately to 0.4 and 3.5 times the most probable value of the charge generated by a minimum-ionizing particle. The results were compared with testbeam data taken with the same prototype to evaluate the time jitter produced by the fluctuations of the charge collection.
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Submitted 11 February, 2024; v1 submitted 2 January, 2024;
originally announced January 2024.
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Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer
Authors:
M. Milanesio,
L. Paolozzi,
T. Moretti,
R. Cardella,
T. Kugathasan,
F. Martinelli,
A. Picardi,
I. Semendyaev,
S. Zambito,
K. Nakamura,
Y. Tabuko,
M. Togawa,
M. Elviretti,
H. Rücker,
F. Cadoux,
R. Cardarelli,
S. Débieux,
Y. Favre,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
L. Iodice,
R. Kotitsa,
C. Magliocca,
M. Nessi
, et al. (5 additional authors not shown)
Abstract:
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted se…
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A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2.
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Submitted 30 October, 2023;
originally announced October 2023.
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20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer
Authors:
S. Zambito,
M. Milanesio,
T. Moretti,
L. Paolozzi,
M. Munker,
R. Cardella,
T. Kugathasan,
F. Martinelli,
A. Picardi,
M. Elviretti,
H. Rücker,
A. Trusch,
F. Cadoux,
R. Cardarelli,
S. Débieux,
Y. Favre,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
L. Iodice,
R. Kotitsa,
C. Magliocca,
M. Nessi,
A. Pizarro-Medina,
J. Sabater Iglesias
, et al. (3 additional authors not shown)
Abstract:
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer of 350 Ωcm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel…
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A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer of 350 Ωcm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel matrix show that the sensor has a 130 V wide bias-voltage operation plateau at which the efficiency is 99.8%. Although this prototype does not include an internal gain layer, the design optimised for timing of the sensor and the front-end electronics provides a time resolutions of 20 ps.
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Submitted 28 January, 2023;
originally announced January 2023.
