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Hard X-ray Generation and Detection of Nanometer-Scale Localized Coherent Acoustic Wave Packets in SrTiO$_3$ and KTaO$_3$
Authors:
Yi**g Huang,
Peihao Sun,
Samuel W. Teitelbaum,
Haoyuan Li,
Yanwen Sun,
Nan Wang,
Sanghoon Song,
Takahiro Sato,
Matthieu Chollet,
Taito Osaka,
Ichiro Inoue,
Ryan A. Duncan,
Hyun D. Shin,
Johann Haber,
**jian Zhou,
Marco Bernardi,
Mingqiang Gu,
James M. Rondinelli,
Mariano Trigo,
Makina Yabashi,
Alexei A. Maznev,
Keith A. Nelson,
Diling Zhu,
David A. Reis
Abstract:
We demonstrate that the absorption of femtosecond x-ray pulses can excite quasi-spherical high-wavevector coherent acoustic phonon wavepackets using an all x-ray pump and probe scattering experiment. The time- and momentum-resolved diffuse scattering signal is consistent with strain pulses induced by the rapid electron cascade dynamics following photoionization at uncorrelated excitation centers.…
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We demonstrate that the absorption of femtosecond x-ray pulses can excite quasi-spherical high-wavevector coherent acoustic phonon wavepackets using an all x-ray pump and probe scattering experiment. The time- and momentum-resolved diffuse scattering signal is consistent with strain pulses induced by the rapid electron cascade dynamics following photoionization at uncorrelated excitation centers. We quantify key parameters of this process, including the localization size of the strain wavepacket and the energy absorption efficiency, which are determined by the photoelectron and Auger electron cascade dynamics, as well as the electron-phonon interaction. In particular, we obtain the localization size of the observed strain wave packet to be 1.5 and 2.5 nm for bulk SrTiO$_3$ and KTaO$_3$ single crystals, even though there are no nanoscale structures or light-intensity patterns that would ordinarily be required to generate acoustic waves of wavelengths much shorter than the penetration depth. Whereas in GaAs and GaP we do not observe a signal above background. The results provide crucial information on x-ray matter interactions, which sheds light on the mechanism of x-ray energy deposition, and the study of high wavevector acoustic phonons and thermal transport at the nanoscale.
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Submitted 2 January, 2024; v1 submitted 27 December, 2023;
originally announced December 2023.
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Interplay of thermal and non-thermal effects in x-ray-induced ultrafast melting
Authors:
Ichiro Inoue,
Victor Tkachenko,
Yuya Kubota,
Fabien Dorchies,
Toru Hara,
Hauke Höeppner,
Yuichi Inubushi,
Konrad J. Kapcia,
Hae Ja Lee,
Vladimir Lipp,
Paloma Martinez,
Eiji Nishibori,
Taito Osaka,
Sven Toleikis,
Jumpei Yamada,
Makina Yabashi,
Beata Ziaja,
Philip A. Heimann
Abstract:
X-ray laser-induced structural changes in silicon undergoing femtosecond melting have been investigated by using an x-ray pump-x-ray probe technique. The experimental results for different initial sample temperatures reveal that the onset time and the speed of the atomic disordering are independent of the initial temperature, suggesting that equilibrium atomic motion in the initial state does not…
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X-ray laser-induced structural changes in silicon undergoing femtosecond melting have been investigated by using an x-ray pump-x-ray probe technique. The experimental results for different initial sample temperatures reveal that the onset time and the speed of the atomic disordering are independent of the initial temperature, suggesting that equilibrium atomic motion in the initial state does not play a pivotal role in the x-ray-induced ultrafast melting. By comparing the observed time-dependence of the atomic disordering and the dedicated theoretical simulations, we interpret that the energy transfer from the excited electrons to ions via electron-ion coupling (thermal effect) as well as a strong modification of the interatomic potential due to electron excitations (non-thermal effect) trigger the ultrafast atomic disordering. Our finding of the interplay of thermal and non-thermal effects in the x-ray-induced melting demonstrates that accurate modeling of intense x-ray interactions with matter is essential to ensure a correct interpretation of experiments using intense x-ray laser pulses.
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Submitted 28 August, 2023; v1 submitted 28 August, 2023;
originally announced August 2023.
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Glass-like thermal conductivity and narrow insulating gap of EuTiO$_3$
Authors:
Alexandre Jaoui,
Shan Jiang,
Xiaokang Li,
Yasuhide Tomioka,
Isao H. Inoue,
Johannes Engelmayer,
Rohit Sharma,
Lara Pätzold,
Thomas Lorenz,
Benoît Fauqué,
Kamran Behnia
Abstract:
Crystals and glasses differ by the amplitude and the temperature dependence of their thermal conductivity. However, there are crystals known to display glass-like thermal conductivity. Here, we show that EuTiO$_3$, a quantum paraelectric known to order antiferromagnetically at 5.5 K, is one such system. The temperature dependence of resistivity and Seebeck coefficient yield an insulating band gap…
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Crystals and glasses differ by the amplitude and the temperature dependence of their thermal conductivity. However, there are crystals known to display glass-like thermal conductivity. Here, we show that EuTiO$_3$, a quantum paraelectric known to order antiferromagnetically at 5.5 K, is one such system. The temperature dependence of resistivity and Seebeck coefficient yield an insulating band gap of $\sim 0.22$ eV. Thermal conductivity is drastically reduced. Its amplitude and temperature dependence are akin to what is seen in amorphous silica. Comparison with non-magnetic perovskite solids, SrTiO$_3$, KTaO$_3$, and EuCoO$_3$, shows that what impedes heat transport are $4f$ spins at Eu$^{2+}$ sites, which couple to phonons well above the ordering temperature. Thus, in this case, superexchange and valence fluctuations, not magnetic frustration, are the drivers of the glass-like thermal conductivity.
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Submitted 5 July, 2023;
originally announced July 2023.
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Femtosecond reduction of atomic scattering factors triggered by intense x-ray pulse
Authors:
Ichiro Inoue,
Jumpei Yamada,
Konrad J. Kapcia,
Michal Stransky,
Victor Tkachenko,
Zoltan Jurek,
Takato Inoue,
Taito Osaka,
Yuichi Inubushi,
Atsuki Ito,
Yuto Tanaka,
Satoshi Matsuyama,
Kazuto Yamauchi,
Makina Yabashi,
Beata Ziaja
Abstract:
X-ray diffraction of silicon irradiated with tightly focused femtosecond x-ray pulses (photon energy: 11.5 keV, pulse duration: 6 fs) was measured at various x-ray intensities up to $4.6\times10^{19}$ W/cm$^2$. The measurement reveals that the diffraction intensity is highly suppressed when the x-ray intensity reaches of the order of $10^{19}$ W/cm$^2$. With a dedicated simulation, we confirm the…
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X-ray diffraction of silicon irradiated with tightly focused femtosecond x-ray pulses (photon energy: 11.5 keV, pulse duration: 6 fs) was measured at various x-ray intensities up to $4.6\times10^{19}$ W/cm$^2$. The measurement reveals that the diffraction intensity is highly suppressed when the x-ray intensity reaches of the order of $10^{19}$ W/cm$^2$. With a dedicated simulation, we confirm the observed reduction of the diffraction intensity is attributed to the femtosecond change in individual atomic scattering factors due to the ultrafast creation of highly ionized atoms through photoionization, Auger decay, and subsequent collisional ionization. We anticipate that this ultrafast reduction of atomic scattering factor will be a basis for new x-ray nonlinear techniques, such as pulse shortening and contrast variation x-ray scattering.
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Submitted 7 August, 2023; v1 submitted 12 April, 2023;
originally announced April 2023.
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Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal
Authors:
Lishai Shoham,
Maria Baskin,
Tom Tiwald,
Guy Ankonina,
Myung-Geun Han,
Anna Zakharova,
Shaked Caspi,
Shay Joseph,
Yimei Zhu,
Isao H. Inoue,
Cinthia Piamonteze,
Marcelo J. Rozenberg,
Lior Kornblum
Abstract:
In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure,…
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In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. Here, we present control of the correlation strength by tuning the degree of orbital overlap using picometer-scale lattice engineering. We illustrate how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated $SrVO_3$ model system. We show how tensile and compressive biaxial strain oppositely affect the $SrVO_3$ in-plane and out-of-plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. We derive and explain the spectral weight redistribution under strain and illustrate how high tensile strain drives the system towards a Mott insulating state. Implementation of such concepts will drive correlated electron phenomena closer towards new solid state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer towards practical realization.
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Submitted 21 April, 2023; v1 submitted 8 February, 2023;
originally announced February 2023.
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CMOS-based area-and-power-efficient neuron and synapse circuits for time-domain analog spiking neural networks
Authors:
Xiangyu Chen,
Zolboo Byambadorj,
Takeaki Yajima,
Hisashi Inoue,
Isao H. Inoue,
Tetsuya Iizuka
Abstract:
Conventional neural structures tend to communicate through analog quantities such as currents or voltages, however, as CMOS devices shrink and supply voltages decrease, the dynamic range of voltage/current-domain analog circuits becomes narrower, the available margin becomes smaller, and noise immunity decreases. More than that, the use of operational amplifiers (op-amps) and continuous-time or cl…
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Conventional neural structures tend to communicate through analog quantities such as currents or voltages, however, as CMOS devices shrink and supply voltages decrease, the dynamic range of voltage/current-domain analog circuits becomes narrower, the available margin becomes smaller, and noise immunity decreases. More than that, the use of operational amplifiers (op-amps) and continuous-time or clocked comparators in conventional designs leads to high energy consumption and large chip area, which would be detrimental to building spiking neural networks. In view of this, we propose a neural structure for generating and transmitting time-domain signals, including a neuron module, a synapse module, and two weight modules. The proposed neural structure is driven by a leakage current of MOS transistors and uses an inverter-based comparator to realize a firing function, thus providing higher energy and area efficiency compared to conventional designs. The proposed neural structure is fabricated using TSMC 65 nm CMOS technology. The proposed neuron and synapse occupy the area of 127 μm^{ 2} and 231 μm^{ 2}, respectively, while achieving millisecond time constants. Actual chip measurements show that the proposed structure implements the temporal signal communication function with millisecond time constants, which is a critical step toward hardware reservoir computing for human-computer interaction. Simulation results of the spiking-neural network for reservoir computing with the behavioral model of the proposed neural structure demonstrate the learning function.
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Submitted 2 February, 2023; v1 submitted 25 August, 2022;
originally announced August 2022.
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Superconductivity enhancement in polar metal regions of Sr$_{0.95}$Ba$_{0.05}$TiO$_3$ and Sr$_{0.985}$Ca$_{0.015}$TiO$_3$ revealed by the systematic Nb do**
Authors:
Yasuhide Tomioka,
Naoki Shirakawa,
Isao H. Inoue
Abstract:
Two different ferroelectric materials, Sr$_{0.95}$Ba$_{0.05}$TiO$_3$ and Sr$_{0.985}$Ca$_{0.015}$TiO$_3$, can be turned into polar metals with broken centrosymmetry via electron do**. Systematic substitution of Nb$^{5+}$ for Ti$^{4+}$ has revealed that these polar metals both commonly show a simple superconducting dome with a single convex shape. Interestingly, the superconducting transition tem…
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Two different ferroelectric materials, Sr$_{0.95}$Ba$_{0.05}$TiO$_3$ and Sr$_{0.985}$Ca$_{0.015}$TiO$_3$, can be turned into polar metals with broken centrosymmetry via electron do**. Systematic substitution of Nb$^{5+}$ for Ti$^{4+}$ has revealed that these polar metals both commonly show a simple superconducting dome with a single convex shape. Interestingly, the superconducting transition temperature $T_\mathrm{c}$ is enhanced more strongly in these polar metals when compared with the nonpolar matrix Sr(Ti,Nb)O$_3$. The maximum $T_\mathrm{c}$ reaches 0.75K, which is the highest reported value among the SrTiO$_3$-based families to date. However, the $T_\mathrm{c}$ enhancement is unexpectedly lower within the vicinity of the putative ferroelectric quantum critical point. The enhancement then becomes much more prominent at locations further inside the dilute carrier-density region, where the screening is less effective. These results suggest that centrosymmetry breaking, i.e., the ferroelectric nature, does not kill the superconductivity. Instead, it enhances the superconductivity directly, despite the absence of strong quantum fluctuations.
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Submitted 1 December, 2022; v1 submitted 30 March, 2022;
originally announced March 2022.
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Generating 77 T using a portable pulse magnet for single shot quantum beam experiments
Authors:
Akihiko Ikeda,
Yasuhiro H. Matsuda,
Xuguang Zhou,
Shiyue Peng,
Yuto Ishii,
Takeshi Yajima,
Yuya Kubota,
Ichiro Inoue,
Yuichi Inubishi,
Kensuke Tono,
Makina Yabashi
Abstract:
We devised a portable system that generates pulsed high magnetic fields up to 77 T with 3 $μ$s duration. The system employs the single turn coil method, a destructive way of field generation. The system consists of a capacitor of 10.4 $μ$F, a 30 kV charger, a mono air-gap switch, a triggering system, and a magnet clamp, which weighs less than 1.0 tons in total and is transportable. The system offe…
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We devised a portable system that generates pulsed high magnetic fields up to 77 T with 3 $μ$s duration. The system employs the single turn coil method, a destructive way of field generation. The system consists of a capacitor of 10.4 $μ$F, a 30 kV charger, a mono air-gap switch, a triggering system, and a magnet clamp, which weighs less than 1.0 tons in total and is transportable. The system offers opportunities for single-shot experiments at ultrahigh magnetic fields in combinations with novel quantum beams. The single-shot x-ray diffraction experiment using x-ray free-electron laser at 65 T is presented. We comment on the possible update of the system for the generation of 100 T.
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Submitted 20 February, 2022; v1 submitted 10 February, 2022;
originally announced February 2022.
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Characterization of photoinduced normal state through charge density wave in superconducting YBa$_2$Cu$_3$O$_{6.67}$
Authors:
H. Jang,
S. Song,
T. Kihara,
Y. Liu,
S. -J. Lee,
S. -Y. Park,
M. Kim,
H. -D. Kim,
G. Coslovich,
S. Nakata,
Y. Kubota,
I. Inoue,
K. Tamasaku,
M. Yabashi,
H. Lee,
C. Song,
H. Nojiri,
B. Keimer,
C. -C. Kao,
J. -S. Lee
Abstract:
The normal state of high-Tc cuprates has been considered one of the essential topics in high-temperature superconductivity research. However, compared to the high magnetic fields study of it, understanding a photoinduced normal state remains elusive. Here, we explore a photoinduced normal state of YBa$_2$Cu$_3$O$_{6.67}$ (YBCO) through a charge density wave (CDW) with time-resolved resonant soft x…
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The normal state of high-Tc cuprates has been considered one of the essential topics in high-temperature superconductivity research. However, compared to the high magnetic fields study of it, understanding a photoinduced normal state remains elusive. Here, we explore a photoinduced normal state of YBa$_2$Cu$_3$O$_{6.67}$ (YBCO) through a charge density wave (CDW) with time-resolved resonant soft x-ray scattering, as well as a high-magnetic field x-ray scattering. In the non-equilibrium state in which people predict a quenched superconducting state based on the previous optical spectroscopies, we experimentally observed a similar analogy to the competition between superconductivity and CDW shown in the equilibrium state. We further observe that the broken pairing states in the superconducting CuO$_2$ plane via the optical pump lead to nucleation of three-dimensional CDW precursor correlation, revealing that the photoinduced CDW is similar to phenomena shown under magnetic fields. Ultimately, these findings provide a critical clue that the characteristics of the photoinduced normal state show a solid resemblance to those under magnetic fields in equilibrium conditions.
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Submitted 9 February, 2022;
originally announced February 2022.
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Delayed onset and directionality of x-ray-induced atomic displacements observed on subatomic length scales
Authors:
Ichiro Inoue,
Victor Tkachenko,
Konrad J. Kapcia,
Vladimir Lipp,
Beata Ziaja,
Yuichi Inubushi,
Toru Hara,
Makina Yabashi,
Eiji Nishibori
Abstract:
Transient structural changes of Al$_2$O$_3$ on subatomic length scales following irradiation with an intense x-ray laser pulse (photon energy: 8.70 keV; pulse duration: 6 fs; fluence: 8$\times$10$^2$ J/cm$^{2}$) have been investigated by using an x-ray pump x-ray probe technique. The measurement reveals that aluminum and oxygen atoms remain in their original positions by $\sim$20 fs after the inte…
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Transient structural changes of Al$_2$O$_3$ on subatomic length scales following irradiation with an intense x-ray laser pulse (photon energy: 8.70 keV; pulse duration: 6 fs; fluence: 8$\times$10$^2$ J/cm$^{2}$) have been investigated by using an x-ray pump x-ray probe technique. The measurement reveals that aluminum and oxygen atoms remain in their original positions by $\sim$20 fs after the intensity maximum of the pump pulse, followed by directional atomic displacements at the fixed unit cell parameters. By comparing the experimental results and theoretical simulations, we interpret that electron excitation and relaxation triggered by the pump pulse modifies the potential energy surface and drives the directional atomic displacements. Our results indicate that high-resolution x-ray structural analysis with the accuracy of 0.01 Åis feasible even with intense x-ray pulses by making the pulse duration shorter than the timescale needed to complete electron excitation and relaxation processes, which usually take up to a few tens of femtoseconds.
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Submitted 21 March, 2022; v1 submitted 10 December, 2021;
originally announced December 2021.
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Generation of Intense Phase-Stable Femtosecond Hard X-ray Pulse Pairs
Authors:
Yu Zhang,
Thomas Kroll,
Clemens Weninger,
Yurina Michine,
Franklin D. Fuller,
Diling Zhu,
Roberto Alonso-Mori,
Dimosthenis Sokaras,
Alberto Lutman,
Aliaksei Halavanau,
Claudio Pellegrini,
Andrei Benediktovitch,
Makina Yabashi,
Ichiro Inoue,
Yuichi Inubushi,
Taito Osaka,
Jumpei Yamada,
Ganguli Babu,
Devashish Salpekar,
Farheen N. Sayed,
Pulickel M. Ajayan,
Jan Kern,
Junko Yano,
Vittal K. Yachandra,
Hitoki Yoneda
, et al. (2 additional authors not shown)
Abstract:
Coherent nonlinear spectroscopies and imaging in the X-ray domain provide direct insight into the coupled motions of electrons and nuclei with resolution on the electronic length and time scale. The experimental realization of such techniques will strongly benefit from access to intense, coherent pairs of femtosecond X-ray pulses. We have observed phase-stable X-ray pulse pairs containing more tha…
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Coherent nonlinear spectroscopies and imaging in the X-ray domain provide direct insight into the coupled motions of electrons and nuclei with resolution on the electronic length and time scale. The experimental realization of such techniques will strongly benefit from access to intense, coherent pairs of femtosecond X-ray pulses. We have observed phase-stable X-ray pulse pairs containing more thank 3 x 10e7 photons at 5.9 keV (2.1 Angstrom) with about 1 fs duration and 2-5 fs separation. The highly directional pulse pairs are manifested by interference fringes in the superfluorescent and seeded stimulated manganese K-alpha emission induced by an X-ray free-electron laser. The fringes constitute the time-frequency X-ray analogue of the Young double-slit interference allowing for frequency-domain X-ray measurements with attosecond time resolution.
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Submitted 14 October, 2021;
originally announced October 2021.
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Shortening X-ray Pulse Duration via Saturable Absorption
Authors:
Ichiro Inoue,
Yuichi Inubushi,
Taito Osaka,
Jumpei Yamada,
Kenji Tamasaku,
Hitoki Yoneda,
Makina Yabashi
Abstract:
To shorten the duration of x-ray pulses, we present a nonlinear optical technique using atoms with core-hole vacancies (core-hole atoms) generated by inner-shell photoionization. The weak Coulomb screening in the core-hole atoms results in decreased absorption at photon energies immediately above the absorption edge. By employing this phenomenon, referred to as saturable absorption, we successfull…
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To shorten the duration of x-ray pulses, we present a nonlinear optical technique using atoms with core-hole vacancies (core-hole atoms) generated by inner-shell photoionization. The weak Coulomb screening in the core-hole atoms results in decreased absorption at photon energies immediately above the absorption edge. By employing this phenomenon, referred to as saturable absorption, we successfully reduce the duration of x-ray free-electron laser pulses (photon energy: 9.000 keV, duration: 6-7 fs, fluence: 2.0-3.5$\times$10$^5$ J/cm$^2$) by $\sim$35%. This finding that core-hole atoms are applicable to nonlinear x-ray optics is an essential step** stone for extending nonlinear technologies commonplace at optical wavelengths to the hard x-ray region.
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Submitted 6 August, 2021; v1 submitted 2 March, 2021;
originally announced March 2021.
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Nonlinear resonant X-ray Raman scattering
Authors:
Johann Haber,
Andreas Kaldun,
Samuel W. Teitelbaum,
Alfred Q. R. Baron,
Philip H. Bucksbaum,
Matthias Fuchs,
Jerome B. Hastings,
Ichiro Inoue,
Yuichi Inubushi,
Dietrich Krebs,
Taito Osaka,
Robin Santra,
Sharon Shwartz,
Kenji Tamasaku,
David A. Reis
Abstract:
We report the observation of a novel nonlinear effect in the hard x-ray range. Upon illuminating Fe and Cu metal foils with intense x-ray pulses tuned near their respective K edges, photons at nearly twice the incoming photon energy are emitted. The signal rises quadratically with the incoming intensity, consistent with two-photon excitation. The spectrum of emitted high-energy photons comprises m…
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We report the observation of a novel nonlinear effect in the hard x-ray range. Upon illuminating Fe and Cu metal foils with intense x-ray pulses tuned near their respective K edges, photons at nearly twice the incoming photon energy are emitted. The signal rises quadratically with the incoming intensity, consistent with two-photon excitation. The spectrum of emitted high-energy photons comprises multiple Raman lines that disperse with the incident photon energy. Upon reaching the double K-shell ionization threshold, the signal strength undergoes a marked rise. Above this threshold, the lines cease dispersing, turning into orescence lines with energies much greater than obtainable by single electron transitions, and additional Raman lines appear. We attribute these processes to electron-correlation mediated multielectron transitions involving double-core hole excitation and various two-electron de-excitation processes to a final state involving one or more L and M core-holes.
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Submitted 25 June, 2020;
originally announced June 2020.
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Split-pulse X-ray photon correlation spectroscopy with seeded X-rays from X-ray laser to study atomic-level dynamics
Authors:
Yuya Shinohara,
Taito Osaka,
Ichiro Inoue,
Takuya Iwashita,
Wojciech Dmowski,
Chae Woo Ryu,
Yadu Sarathchandran,
Takeshi Egami
Abstract:
With their brilliance and temporal structure, X-ray free-electron laser can unveil atomic-scale details of ultrafast phenomena. Recent progress in split-and-delay optics (SDO), which produces two X-ray pulses with time-delays, offers bright prospects for observing dynamics at the atomic-scale. However, their insufficient pulse energy has limited its application either to phenomena with longer corr…
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With their brilliance and temporal structure, X-ray free-electron laser can unveil atomic-scale details of ultrafast phenomena. Recent progress in split-and-delay optics (SDO), which produces two X-ray pulses with time-delays, offers bright prospects for observing dynamics at the atomic-scale. However, their insufficient pulse energy has limited its application either to phenomena with longer correlation length or to measurement with a fixed delay-time. Here we show that the combination of the SDO and self-seeding of X-rays increases the pulse energy and makes it possible to observe the atomic-scale dynamics in a timescale of picoseconds. We show that the speckle contrast in scattering from water depends on the delay-time as expected. Our results demonstrate the capability of measurement using the SDO with seeded X-rays for resolving the dynamics in temporal and spatial scales that are not accessible by other techniques, opening opportunities for studying the atomic-level dynamics.
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Submitted 23 December, 2020; v1 submitted 22 May, 2020;
originally announced May 2020.
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Nanofocusing optics for an X-ray free-electron laser generating an extreme intensity of 100 EW/cm$^2$ using total reflection mirrors
Authors:
Hirokatsu Yumoto,
Yuichi Inubushi,
Taito Osaka,
Ichiro Inoue,
Takahisa Koyama,
Kensuke Tono,
Makina Yabashi,
Haruhiko Ohashi
Abstract:
A nanofocusing optical system referred to as $\textit{100 exa}$ for an X-ray free-electron laser (XFEL) was developed to generate an extremely high intensity of 100 EW/cm$^2$ (10$^2$$^0$ W/cm$^2$) using total reflection mirrors. The system is based on Kirkpatrick-Baez geometry, with 250 mm long elliptically figured mirrors optimized for the SPring-8 Angstrom Compact Free-Electron Laser (SACLA) XFE…
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A nanofocusing optical system referred to as $\textit{100 exa}$ for an X-ray free-electron laser (XFEL) was developed to generate an extremely high intensity of 100 EW/cm$^2$ (10$^2$$^0$ W/cm$^2$) using total reflection mirrors. The system is based on Kirkpatrick-Baez geometry, with 250 mm long elliptically figured mirrors optimized for the SPring-8 Angstrom Compact Free-Electron Laser (SACLA) XFEL facility. The nano-precision surface employed is coated with rhodium and offers a high reflectivity of 80%, with a photon energy of up to 12 keV, under total reflection conditions. Incident X-rays on the optics are reflected with a large spatial acceptance of over 900 $μ$m. The focused beam is 210 nm $\times$ 120 nm (full width at half maximum) and was evaluated at a photon energy of 10 keV. The optics developed for $\textit{100 exa}$ efficiently achieved an intensity of 1 $\times$ 10$^2$$^0$ W/cm$^2$ with a pulse duration of 7 fs and a pulse energy of 150 $μ$J (25% of the pulse energy generated at the light source). The experimental chamber, which can provide varied stage arrangements and sample conditions, including vacuum environments and atmospheric pressure helium, was set up with the focusing optics to meet the experimental requirements.
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Submitted 23 March, 2020;
originally announced March 2020.
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A micro channel-cut crystal X-ray monochromator for a self-seeded hard X-ray free-electron laser
Authors:
Taito Osaka,
Ichiro Inoue,
Ryota Kinjo,
Takashi Hirano,
Yuki Morioka,
Yasuhisa Sano,
Kazuto Yamauchi,
Makina Yabashi
Abstract:
A channel-cut Si(111) crystal with a channel width of 90 $μ$m was developed for achieving reflection self-seeding in hard X-ray free-electron lasers (XFELs). With the crystal, a monochromatic seed pulse is produced from a broadband XFEL pulse generated in the first-half undulators with an optical delay of 119 fs at 10 keV. The small optical delay allows a temporal overlap between the seed optical…
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A channel-cut Si(111) crystal with a channel width of 90 $μ$m was developed for achieving reflection self-seeding in hard X-ray free-electron lasers (XFELs). With the crystal, a monochromatic seed pulse is produced from a broadband XFEL pulse generated in the first-half undulators with an optical delay of 119 fs at 10 keV. The small optical delay allows a temporal overlap between the seed optical pulse and the electron bunch by using a small magnetic chicane for the electron beam at the middle of the undulator section. A peak reflectivity reached 67%, which is a reasonable value as compared with the theoretical one of 81%. By using this monochromator, a monochromatic seed pulse without broadband background in spectrum was obtained at SACLA with a conversion efficiency from a broadband XFEL pulse of $\sim 2 \times 10^{-2}$, which is $\sim 10$ times higher than that of transmission self-seeding using a thin diamond (400) monochromator.
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Submitted 30 October, 2018;
originally announced November 2018.
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Superfluorescence, free-induction decay, and four-wave mixing: propagation of free-electron laser pulses through a dense sample of helium ions
Authors:
James R Harries,
Hiroshi Iwayama,
Susumu Kuma,
Masatomi Iizawa,
Norihiro Suzuki,
Yoshiro Azuma,
Ichiro Inoue,
Shigeki Ohwada,
Norihiro Suzuki,
Tadashi Togashi,
Kensuke Tono,
Makina Yabashi,
Eiji Shigemasa
Abstract:
We report an experimental and numerical study of the propagation of free-electron laser pulses (wavelength 24.3 nm) through helium gas. Ionisation and excitation populates the He$^{+}$ 4$p$ state. Strong, directional emission was observed at wavelengths of 469 nm, 164 nm, 30.4 nm, and 24.5 nm. We interpret the emissions at 469 nm and 164 nm as 4$p$-3$s$-2$p$ cascade superfluorescence, that at 30.4…
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We report an experimental and numerical study of the propagation of free-electron laser pulses (wavelength 24.3 nm) through helium gas. Ionisation and excitation populates the He$^{+}$ 4$p$ state. Strong, directional emission was observed at wavelengths of 469 nm, 164 nm, 30.4 nm, and 24.5 nm. We interpret the emissions at 469 nm and 164 nm as 4$p$-3$s$-2$p$ cascade superfluorescence, that at 30.4 nm as yoked superfluorescence on the 2$p$-1$s$ transition, and that at 25.6 nm as free-induction decay of the 3$p$ state.
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Submitted 17 September, 2018;
originally announced September 2018.
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Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition
Authors:
Alejandro Schulman,
Ai Kitoh,
Pablo Stoliar,
Isao H. Inoue
Abstract:
Controlling the insulator-to-2D-metal transition is a promising key to overcome the scaling problem that silicon-based electronic devices will face in the near future. In this context, we examine the channel formation of SrTiO3-based solid-gated field-effect devices in which a 2D metal phase coexists with a semiconductor phase. A non-monotonic voltage-gain transfer characteristic with negative and…
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Controlling the insulator-to-2D-metal transition is a promising key to overcome the scaling problem that silicon-based electronic devices will face in the near future. In this context, we examine the channel formation of SrTiO3-based solid-gated field-effect devices in which a 2D metal phase coexists with a semiconductor phase. A non-monotonic voltage-gain transfer characteristic with negative and positive slope regions is observed. We introduce a numerical model that helps to rationalize the experimental findings in terms of the established physics of field-effect transistors and percolation. Our numerical study not only reproduces the experimental results but also provides non-trivial predictions, which we verify experimentally.
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Submitted 30 January, 2017;
originally announced January 2017.
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Enhanced and continuous electrostatic carrier do** on the SrTiO$_{3}$ surface
Authors:
Azar B. Eyvazov,
Isao H. Inoue,
Pablo Stoliar,
Marcelo J. Rozenberg,
Christos Panagopoulos
Abstract:
Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices o…
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Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO$_{3}$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\sim10^{13}$cm$^{-2}$ carriers, while the field-effect mobility is kept at 10\,cm$^2$/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO$_{3}$. Namely, the formation and continuous evolution of field domains and current filaments.
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Submitted 7 May, 2013;
originally announced May 2013.
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Tuning of metal-insulator transition of two-dimensional electrons at parylene/SrTiO$_3$ interface by electric field
Authors:
H. Nakamura,
H. Tomita,
H. Akimoto,
R. Matsumura,
I. H. Inoue,
T. Hasegawa,
K. Kono,
Y. Tokura,
H. Takagi
Abstract:
Electrostatic carrier do** using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number…
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Electrostatic carrier do** using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number of devices doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics.
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Submitted 27 September, 2008;
originally announced September 2008.
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A mechanism for unipolar resistance switching in oxide non-volatile memory devices
Authors:
M. J. Sanchez,
M. J. Rozenberg,
I. H. Inoue
Abstract:
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a k…
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Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures.
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Submitted 20 July, 2007;
originally announced July 2007.
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Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution
Authors:
I. H. Inoue,
S. Yasuda,
H. Akinaga,
H. Takagi
Abstract:
Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwich exhibits a resistance that reversibly switches between two states: one is a…
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Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwich exhibits a resistance that reversibly switches between two states: one is a highly resistive off-state and the other is a conductive on-state. Several distinct features were universally observed in these binary TMO sandwiches: namely, nonpolar switching, non-volatile threshold switching, and current--voltage duality. From the systematic sample-size dependence of the resistance in on- and off-states, we conclude that the resistance switching is due to the homogeneous/inhomogeneous transition of the current distribution at the interface.
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Submitted 26 February, 2007;
originally announced February 2007.
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Low temperature metallic state induced by electrostatic carrier do** of SrTiO$_3$
Authors:
H. Nakamura,
I. H. Inoue,
Y. Takahashi,
T. Hasegawa,
Y. Tokura,
H. Takagi
Abstract:
Transport properties of SrTiO$_3$-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below $R_{\Box}$ $\sim$ 10 k$Ω$ at low temperatures, with carrier mobility exceeding 1000 cm$^2$/Vs. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior (…
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Transport properties of SrTiO$_3$-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below $R_{\Box}$ $\sim$ 10 k$Ω$ at low temperatures, with carrier mobility exceeding 1000 cm$^2$/Vs. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior ($dR$/$dT$ $>$ 0). Our results demonstrate an insulator to metal transition in SrTiO$_3$ driven by electrostatic carrier density control.
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Submitted 10 August, 2006;
originally announced August 2006.
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Understanding the bulk electronic structure of Ca1-xSrxVO3
Authors:
Kalobaran Maiti,
U. Manju,
Sugata Ray,
Priya Mahadevan,
I. H. Inoue,
C. Carbone,
D. D. Sarma
Abstract:
We investigate the electronic structure of Ca1-xSrxVO3 using careful state-of-the-art experiments and calculations. Photoemission spectra using synchrotron radiation reveal a hitherto unnoticed polarization dependence of the photoemission matrix elements for the surface component leading to a substantial suppression of its intensity. Bulk spectra extracted with the help of experimentally determi…
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We investigate the electronic structure of Ca1-xSrxVO3 using careful state-of-the-art experiments and calculations. Photoemission spectra using synchrotron radiation reveal a hitherto unnoticed polarization dependence of the photoemission matrix elements for the surface component leading to a substantial suppression of its intensity. Bulk spectra extracted with the help of experimentally determined electron escape depth and estimated suppression of surface contributions resolve outstanding puzzles concerning the electronic structure in Ca1-xSrxVO3.
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Submitted 26 September, 2005;
originally announced September 2005.
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Bulk and surface-sensitive high-resolution photoemission study of Mott-Hubbard systems SrVO$_3$ and CaVO$_3$
Authors:
R. Eguchi,
T. Kiss,
S. Tsuda,
T. Shimojima,
T. Mizokami,
T. Yokoya,
A. Chainani,
S. Shin,
I. H. Inoue,
T. Togashi,
S. Watanabe,
C. Q. Zhang,
C. T. Chen,
M. Arita,
K. Shimada,
H. Namatame,
M. Taniguchi
Abstract:
We study the electronic structure of Mott-Hubbard systems SrVO$_{3}$ and CaVO$_3$ with bulk and surface-sensitive high-resolution photoemission spectroscopy (PES), using a VUV laser, synchrotron radiation and a discharge lamp ($hν$ = 7 - 21 eV). A systematic suppression of the density of states (DOS) within $\sim$ 0.2 eV of the Fermi level ($E_F$) is found on decreasing photon energy i.e. on inc…
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We study the electronic structure of Mott-Hubbard systems SrVO$_{3}$ and CaVO$_3$ with bulk and surface-sensitive high-resolution photoemission spectroscopy (PES), using a VUV laser, synchrotron radiation and a discharge lamp ($hν$ = 7 - 21 eV). A systematic suppression of the density of states (DOS) within $\sim$ 0.2 eV of the Fermi level ($E_F$) is found on decreasing photon energy i.e. on increasing bulk sensitivity. The coherent band in SrVO$_{3}$ and CaVO$_3$ is shown to consist of surface and bulk derived features, separated in energy. The stronger distortion on surface of CaVO$_{3}$ compared to SrVO$_{3}$ leads to higher surface metallicity in the coherent DOS at $E_F$, consistent with recent theory.
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Submitted 29 November, 2005; v1 submitted 21 April, 2005;
originally announced April 2005.
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Strong electron correlation effects in non-volatile electronic memory devices
Authors:
Marcelo J. Rozenberg,
Isao H. Inoue,
Maria Jose Sanchez
Abstract:
We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a novel switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The obs…
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We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a novel switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realisation of a novel type of strongly correlated electron device.
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Submitted 25 June, 2004;
originally announced June 2004.
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Field Effect Transistor Based on KTaO3 Perovskite
Authors:
K. Ueno,
I. H. Inoue,
T. Yamada,
H. Akoh,
Y. Tokura,
H. Takagi
Abstract:
An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field eff…
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An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field effect mobility was almost temperature independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics.
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Submitted 12 December, 2003;
originally announced December 2003.
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Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator
Authors:
K. Ueno,
I. H. Inoue,
H. Akoh,
M. Kawasaki,
Y. Tokura,
H. Takagi
Abstract:
A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1c…
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A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV.
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Submitted 17 June, 2003;
originally announced June 2003.
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High-Field Properties of Single-Crystalline Cavo3
Authors:
M. H. Jung,
I. H. Inoue,
H. Nakotte,
A. H. Lacerda
Abstract:
The magnetic properties of perovskite CaVO3 single crystals have been studied by means of magnetoresistance r(T, H) and magnetization M(H) measurements in fields to 18T. At 2 K, the magnetoresistance is positive and a maximum value of Dr(18T)/r(0) = 16.5% is found for H//a. The magnetization exhibits a smooth increase at 2 K, reaching values of M(18T) = 0.03, 0.05, 0.17 mB/f.u. for H//a, H//b, a…
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The magnetic properties of perovskite CaVO3 single crystals have been studied by means of magnetoresistance r(T, H) and magnetization M(H) measurements in fields to 18T. At 2 K, the magnetoresistance is positive and a maximum value of Dr(18T)/r(0) = 16.5% is found for H//a. The magnetization exhibits a smooth increase at 2 K, reaching values of M(18T) = 0.03, 0.05, 0.17 mB/f.u. for H//a, H//b, and H//c, respectively. This anisotropy found in M(H) is consistent with that observed for Dr(H//a) > Dr(H//b) > Dr(H//c). These results can be interpreted in terms of the field-dependent scattering mechanism of CaVO3.
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Submitted 25 February, 2002;
originally announced February 2002.
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Fermi Surface of 3d^1 Perovskite CaVO3 Near the Mott Transition
Authors:
I. H. Inoue,
C. Bergemann,
I. Hase,
S. R. Julian
Abstract:
We present a detailed de Haas van Alphen effect study of the perovskite CaVO3, offering an unprecedented test of electronic structure calculations in a 3d transition metal oxide. Our experimental and calculated Fermi surfaces are in good agreement -- but only if we ignore large orthorhombic distortions of the cubic perovskite structure. Subtle discrepancies may shed light on an apparent conflict…
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We present a detailed de Haas van Alphen effect study of the perovskite CaVO3, offering an unprecedented test of electronic structure calculations in a 3d transition metal oxide. Our experimental and calculated Fermi surfaces are in good agreement -- but only if we ignore large orthorhombic distortions of the cubic perovskite structure. Subtle discrepancies may shed light on an apparent conflict between the low energy properties of CaVO3, which are those of a simple metal, and high energy probes which reveal strong correlations that place CaVO3 on the verge of a metal-insulator transition.
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Submitted 8 February, 2002;
originally announced February 2002.
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Electronic structure of Ca$_{1-x}$Sr$_x$VO$_3$: a tale of two energy-scales
Authors:
K. Maiti,
D. D. Sarma,
M. J. Rozenberg,
I. H. Inoue,
H. Makino,
O. Goto,
M. Pedio,
R. Cimino
Abstract:
We investigate the electronic structure of Ca$_{1-x}$Sr$_x$VO$_3$ using photoemission spectroscopy. Core level spectra establish an electronic phase separation at the surface, leading to distinctly different surface electronic structure compared to the bulk. Analysis of the photoemission spectra of this system allowed us to separate the surface and bulk contributions. These results help us to un…
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We investigate the electronic structure of Ca$_{1-x}$Sr$_x$VO$_3$ using photoemission spectroscopy. Core level spectra establish an electronic phase separation at the surface, leading to distinctly different surface electronic structure compared to the bulk. Analysis of the photoemission spectra of this system allowed us to separate the surface and bulk contributions. These results help us to understand properties related to two vastly differing energy-scales, namely the low energy-scale of thermal excitations (~$k_{B}T$) and the high-energy scale related to Coulomb and other electronic interactions.
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Submitted 22 May, 2001;
originally announced May 2001.
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Penetration Depth Measurements in MgB_2: Evidence for Unconventional Superconductivity
Authors:
C. Panagopoulos,
B. D. Rainford,
T. Xiang,
C. A. Scott,
M. Kambara,
I. H. Inoue
Abstract:
We have measured the magnetic penetration depth of the recently discovered binary superconductor MgB_2 using muon spin rotation and low field $ac$-susceptibility. From the dam** of the muon precession signal we find the penetration depth at zero temperature is about 85nm. The low temperature penetration depth shows a quadratic temperature dependence, indicating the presence of nodes in the sup…
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We have measured the magnetic penetration depth of the recently discovered binary superconductor MgB_2 using muon spin rotation and low field $ac$-susceptibility. From the dam** of the muon precession signal we find the penetration depth at zero temperature is about 85nm. The low temperature penetration depth shows a quadratic temperature dependence, indicating the presence of nodes in the superconducting energy gap.
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Submitted 2 March, 2001;
originally announced March 2001.
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Band-width control in a perovskite-type 3d^1 correlated metal Ca_1-xSr_xVO_3. II. Optical spectroscopy investigation
Authors:
H. Makino,
I. H. Inoue,
M. J. Rozenberg,
Y. Aiura,
I. Hase,
S. Onari
Abstract:
Optical conductivity spectra of single crystals of Ca_1-xSr_xVO_3 have been studied to elucidate how the electronic behavior depends on the strength of the electron correlation without changing the nominal number of electrons per vanadium atom. The effective mass deduced by the analysis of the Drude-like contribution do not show critical enhancement, even though the system is close to the Mott t…
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Optical conductivity spectra of single crystals of Ca_1-xSr_xVO_3 have been studied to elucidate how the electronic behavior depends on the strength of the electron correlation without changing the nominal number of electrons per vanadium atom. The effective mass deduced by the analysis of the Drude-like contribution do not show critical enhancement, even though the system is close to the Mott transition. Besides the Drude-like contribution, two anomalous features were observed in the optical conductivity spectra of the intraband transition within the 3d band. These features can be assigned to transitions involving the incoherent and coherent bands near the Fermi level. The large spectral weight redistribution in this system, however, does not involve a large mass enhancement.
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Submitted 5 May, 1998; v1 submitted 12 January, 1998;
originally announced January 1998.
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Band-width control in a perovskite-type 3d^1 correlated metal Ca_{1-x}Sr_xVO_3. I. Evolution of the electronic properties and effective mass
Authors:
I. H. Inoue,
O. Goto,
H. Makino,
N. E. Hussey,
M. Ishikawa
Abstract:
Single crystals of the perovskite-type $3d^{1}$ metallic alloy system Ca$_{1-x}$Sr$_x$VO$_3$ were synthesized in order to investigate metallic properties near the Mott transition. The substitution of a Ca$^{2+}$ ion for a Sr$^{2+}$ ion reduces the band width $W$ due to a buckling of the V-O-V bond angle from $\sim180^\circ$ for SrVO$_3$ to $\sim160^\circ$ for CaVO$_3$. Thus, the value of $W$ can…
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Single crystals of the perovskite-type $3d^{1}$ metallic alloy system Ca$_{1-x}$Sr$_x$VO$_3$ were synthesized in order to investigate metallic properties near the Mott transition. The substitution of a Ca$^{2+}$ ion for a Sr$^{2+}$ ion reduces the band width $W$ due to a buckling of the V-O-V bond angle from $\sim180^\circ$ for SrVO$_3$ to $\sim160^\circ$ for CaVO$_3$. Thus, the value of $W$ can be systematically controlled without changing the number of electrons making Ca$_{1-x}$Sr$_x$VO$_3$: one of the most ideal systems for studying band-width effects. The Sommerfeld-Wilson's ratio ($\simeq2$), the Kadowaki-Woods ratio (in the same region as heavy Fermion systems), and a large $T^{2}$ term in the electric resistivity, even at 300 K, substantiate a large electron correlation in this system, though the effective mass, obtained by thermodynamic and magnetic measurements, shows only a systematic but moderate increase in going from SrVO$_3$ to CaVO$_3$, in contrast to the critical enhancement expected from the Brinkmann-Rice picture. It is proposed that the metallic properties observed in this system near the Mott transition can be explained by considering the effect of a non-local electron correlation.
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Submitted 4 May, 1998; v1 submitted 9 January, 1998;
originally announced January 1998.
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Low frequency spectroscopy of the correlated metallic system $Ca_xSr_{1-x}VO_3$
Authors:
M. J. Rozenberg,
I. H. Inoue,
H. Makino,
F. Iga,
Y. Nishihara
Abstract:
We study the photoemission and optical conductivity response of the strongly correlated metallic system $Ca_xSr_{1-x}VO_3$. We find that the basic features of the transfer of spectral weight in photoemission experiments and the unusual lineshape of the optical response can be understood by modeling the system with a one band Hubbard model close to the Mott-Hubbard transition. We present a detail…
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We study the photoemission and optical conductivity response of the strongly correlated metallic system $Ca_xSr_{1-x}VO_3$. We find that the basic features of the transfer of spectral weight in photoemission experiments and the unusual lineshape of the optical response can be understood by modeling the system with a one band Hubbard model close to the Mott-Hubbard transition. We present a detailed comparison between the low frequency experimental data and the corresponding theoretical predictions obtained within the LISA method that is exact in the limit of large lattice connectivity.
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Submitted 7 March, 1996;
originally announced March 1996.
