-
Experimental demonstration of the suppression of optical phonon splitting in 2D materials by Raman spectroscopy
Authors:
Marta De Luca,
Xavier Cartoixà,
David I. Indolese,
Javier Martín-Sánchez,
Kenji Watanabe,
Takashi Taniguchi,
Christian Schönenberger,
Rinaldo Trotta,
Riccardo Rurali,
Ilaria Zardo
Abstract:
Raman spectroscopy is one of the most extended experimental techniques to investigate thin-layered 2D materials. For a complete understanding and modeling of the Raman spectrum of a novel 2D material, it is often necessary to combine the experimental investigation to density-functional-theory calculations. We provide the experimental proof of the fundamentally different behavior of polar 2D vs 3D…
▽ More
Raman spectroscopy is one of the most extended experimental techniques to investigate thin-layered 2D materials. For a complete understanding and modeling of the Raman spectrum of a novel 2D material, it is often necessary to combine the experimental investigation to density-functional-theory calculations. We provide the experimental proof of the fundamentally different behavior of polar 2D vs 3D systems regarding the effect of the dipole-dipole interactions, which in 2D systems ultimately lead to the absence of optical phonons splitting, otherwise present in 3D materials. We demonstrate that non-analytical corrections (NACs) should not be applied to properly model the Raman spectra of few-layered 2D materials, such as WSe$_{2}$ and h-BN, corroborating recent theoretical predictions [Nano Lett. 2017, 17 (6), 3758-3763]. Our findings are supported by measurements performed on tilted samples that allow increasing the component of photon momenta in the plane of the flake, thus unambiguously setting the direction of an eventual NAC. We also investigate the influence of the parity of the number of layers and of the type of layer-by-layer stacking on the effect of NACs on the Raman spectra.
△ Less
Submitted 16 September, 2020;
originally announced September 2020.
-
Global strain-induced scalar potential in graphene devices
Authors:
Lujun Wang,
Andreas Baumgartner,
Péter Makk,
Simon Zihlmann,
Blesson S. Varghese,
David I. Indolese,
Kenji Watanabe,
Takashi Taniguchi,
Christian Schönenberger
Abstract:
By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distortion is an energy shift of the Dirac point, often described as a scalar potential. We demonstrate how such a scalar potential can be generated systematically over an entire electronic device and how the resulting changes…
▽ More
By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distortion is an energy shift of the Dirac point, often described as a scalar potential. We demonstrate how such a scalar potential can be generated systematically over an entire electronic device and how the resulting changes in the graphene work function can be detected in transport experiments. Combined with Raman spectroscopy, we obtain a characteristic scalar potential consistent with recent theoretical estimates. This direct evidence for a scalar potential on a macroscopic scale due to deterministically generated strain in graphene paves the way for engineering the optical and electronic properties of graphene and similar materials by using external strain.
△ Less
Submitted 7 September, 2020;
originally announced September 2020.
-
Compact SQUID realized in a double layer graphene heterostructure
Authors:
David I. Indolese,
Paritosh Karnatak,
Artem Kononov,
Raphaëlle Delagrange,
Roy Haller,
Lujun Wang,
Péter Makk,
Kenji Watanabe,
Takashi Taniguchi,
Christian Schönenberger
Abstract:
Two-dimensional systems that host one-dimensional helical states are exciting from the perspective of scalable topological quantum computation when coupled with a superconductor. Graphene is particularly promising for its high electronic quality, versatility in van der Waals heterostructures and its electron and hole-like degenerate 0$th$ Landau level. Here, we study a compact double layer graphen…
▽ More
Two-dimensional systems that host one-dimensional helical states are exciting from the perspective of scalable topological quantum computation when coupled with a superconductor. Graphene is particularly promising for its high electronic quality, versatility in van der Waals heterostructures and its electron and hole-like degenerate 0$th$ Landau level. Here, we study a compact double layer graphene SQUID (superconducting quantum interference device), where the superconducting loop is reduced to the superconducting contacts, connecting two parallel graphene Josephson junctions. Despite the small size of the SQUID, it is fully tunable by independent gate control of the Fermi energies in both layers. Furthermore, both Josephson junctions show a skewed current phase relationship, indicating the presence of superconducting modes with high transparency. In the quantum Hall regime we measure a well defined conductance plateau of 2$e^2/h$ an indicative of counter propagating edge channels in the two layers. Our work opens a way for engineering topological superconductivity by coupling helical edge states, from graphene's electron-hole degenerate 0$th$ Landau level via superconducting contacts.
△ Less
Submitted 9 June, 2020;
originally announced June 2020.
-
Mobility enhancement in graphene by in situ reduction of random strain fluctuations
Authors:
Lujun Wang,
Péter Makk,
Simon Zihlmann,
Andreas Baumgartner,
David I. Indolese,
Kenji Watanabe,
Takashi Taniguchi,
Christian Schönenberger
Abstract:
Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be in situ reduced by increasing the average uniaxial strain. When…
▽ More
Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be in situ reduced by increasing the average uniaxial strain. When $\sim0.2\%$ of uniaxial strain is applied to the graphene, an enhancement of the carrier mobility by $\sim35\%$ is observed while the residual do** reduces by $\sim39\%$. We demonstrate a strong correlation between the mobility and the residual do**, from which we conclude that random local strain fluctuations are the dominant source of disorder limiting the mobility in these devices. Our findings are also supported by Raman spectroscopy measurements.
△ Less
Submitted 30 September, 2019;
originally announced September 2019.
-
Wideband and on-chip excitation for dynamical spin injection into graphene
Authors:
D. I. Indolese,
S. Zihlmann,
P. Makk,
C. Jünger,
K. Thodkar,
C. Schönenberger
Abstract:
Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin pum** driven by ferromagnetic resonance is a neat way to circumvent this problem as it produces a pure spin current in the absence of a charge current. Here, we sh…
▽ More
Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin pum** driven by ferromagnetic resonance is a neat way to circumvent this problem as it produces a pure spin current in the absence of a charge current. Here, we show spin pum** into single layer graphene in micron scale devices. A broadband on-chip RF current line is used to bring micron scale permalloy (Ni$_{80}$Fe$_{20}$) pads to ferromagnetic resonance with a magnetic field tunable resonance condition. At resonance, a spin current is emitted into graphene, which is detected by the inverse spin hall voltage in a close-by platinum electrode. Clear spin current signals are detected down to a power of a few milliwatts over a frequency range of 2 GHz to 8 GHz. This compact device scheme paves the way for more complex device structures and allows the investigation of novel materials.
△ Less
Submitted 25 June, 2018;
originally announced June 2018.
-
Signatures of van Hove singularities probed by the supercurrent in a graphene - hBN superlattice
Authors:
D. I. Indolese,
R. Delagrange,
P. Makk,
J. R. Wallbank,
K. Wanatabe,
T. Taniguchi,
C. Schönenberger
Abstract:
The moiré superlattice induced in graphene by the hexagonal boron nitride substrate modifies strongly the bandstructure of graphene, which manifests itself by the appearance of new Dirac points, accompanied by van Hove singularities. In this work, we present supercurrent measurements in a Josephson junction made from such a graphene superlattice in the long and diffusive regime, where that the sup…
▽ More
The moiré superlattice induced in graphene by the hexagonal boron nitride substrate modifies strongly the bandstructure of graphene, which manifests itself by the appearance of new Dirac points, accompanied by van Hove singularities. In this work, we present supercurrent measurements in a Josephson junction made from such a graphene superlattice in the long and diffusive regime, where that the supercurrent depends on the Thouless energy. We can then estimate the specific density of states of the graphene superlattice from the combined measurement of the critical current and the normal state resistance. The result matches with theoretical predictions and highlights the strong increase of the density of states at the van Hove singularities. By measuring the magnetic field dependence of the supercurrent, we find the presence of edge currents at these singularities. We explain it by the reduction of the Fermi velocity associated with the flat band at the van Hove singularity, which suppresses the supercurrent in the bulk while the electrons at the edge remain less localized, resulting in an edge supercurrent. We attribute this different behavior of the edges to defects or chemical do**.
△ Less
Submitted 28 May, 2018; v1 submitted 25 May, 2018;
originally announced May 2018.
