Showing 1–15 of 15 results for author: Ilver, L

Electronic structure of (Ga,Mn)As revisited

Authors: J. Kanski, L. Ilver, K. Karlsson, I. Ulfat, M. Leandersson, J. Sadowski, I. Di Marco

Abstract: The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs. impurity band carriers. Using angle resolved photoemission we are for the first time able to identify a highly dispersive Mn-induced energy band in (Ga,Mn)As. Our r… ▽ More The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs. impurity band carriers. Using angle resolved photoemission we are for the first time able to identify a highly dispersive Mn-induced energy band in (Ga,Mn)As. Our results show that the electronic structure of the (Ga,Mn)As system is significantly modified from that of GaAs throughout the valence band. Close to the Fermi energy, the presence of Mn induces a strong mixing of the bulk bands of GaAs, which results in the appearance of a highly dispersive band in the gap region of GaAs. For Mn concentrations above 1% the band reaches the Fermi level, and can thus host the delocalized holes needed for ferromagnetic coupling. Overall, our data provide a firm evidence of delocalized carriers belonging to the modified host valence band. △ Less

Submitted 24 August, 2016; originally announced August 2016.

Electronic structure of (Ga,Mn)As revisited: an alternative view on the "Battle of the bands"

Authors: J. Kanski, L. Ilver, K. Karlsson, M. Leandersson, I. Ulfat, J. Sadowski

Abstract: New detailed angle-resolved photoemission data are presented, revealing the existence of an Mn-induced state that extends into the band gap of GaAs. In sharp contrast to recent reports we observe that the state is highly dispersive. Spin resolved photoemission shows that the band is spin polarized even at room temperature. The results are not consistent with any of the currently discussed band mod… ▽ More New detailed angle-resolved photoemission data are presented, revealing the existence of an Mn-induced state that extends into the band gap of GaAs. In sharp contrast to recent reports we observe that the state is highly dispersive. Spin resolved photoemission shows that the band is spin polarized even at room temperature. The results are not consistent with any of the currently discussed band models for ferromagnetism. △ Less

Submitted 3 November, 2014; v1 submitted 31 October, 2014; originally announced October 2014.

Comments: 18 pages, 4 figures

Effects of non-uniform Mn distribution in (Ga,Mn)As

Authors: I. Ulfat, J. Kanski, L. Ilver, J. Sadowski, K. Karlsson, A. Ernst

Abstract: Resonant in situ photoemission from Mn 3d states in Ga_{1-x}Mn_{x}As is reported for Mn concentrations down to very dilute limit of 0.1 at %. The properties of the peak at the valence-band maximum reveal an effective interaction between Mn 3d states for concentration as low as 2.5 %. Concentration-dependent spectral features are analyzed on the basis of first-principles calculations for systems wi… ▽ More Resonant in situ photoemission from Mn 3d states in Ga_{1-x}Mn_{x}As is reported for Mn concentrations down to very dilute limit of 0.1 at %. The properties of the peak at the valence-band maximum reveal an effective interaction between Mn 3d states for concentration as low as 2.5 %. Concentration-dependent spectral features are analyzed on the basis of first-principles calculations for systems with selected impurity positions as well as for random alloys. △ Less

Submitted 3 October, 2013; originally announced October 2013.

Comments: To be submitted to Physical Review Letters

Mn induced modifications of Ga 3d photoemission from (Ga, Mn)As: evidence for long range effects

Authors: J. Kanski, I. Ulfat, L. Ilver, M. Leandersson, J. Sadowski, K. Karlsson, P. Pal

Abstract: Using synchrotron based photoemission, we have investigated the Mn-induced changes in Ga 3d core level spectra from as-grown ${\rm Ga}_{1-x}{\rm Mn}_{x}{\rm As}$. Although Mn is located in Ga substitutional sites, and does therefore not have any Ga nearest neighbours, the impact of Mn on the Ga core level spectra is pronounced even at Mn concentrations in the range of 0.5%. The analysis shows that… ▽ More Using synchrotron based photoemission, we have investigated the Mn-induced changes in Ga 3d core level spectra from as-grown ${\rm Ga}_{1-x}{\rm Mn}_{x}{\rm As}$. Although Mn is located in Ga substitutional sites, and does therefore not have any Ga nearest neighbours, the impact of Mn on the Ga core level spectra is pronounced even at Mn concentrations in the range of 0.5%. The analysis shows that each Mn atom affects a volume corresponding to a sphere with around 1.4 nm diameter. △ Less

Submitted 6 July, 2012; originally announced July 2012.

Comments: Submitted to Physical Review B, Brief Report

Diffusion of Mn through GaAs barrier

Authors: J. Adell, I. Ulfat, L. Ilver, J. Sadowski, J. Kanski

Abstract: Thermally stimulated diffusion of Mn across the (Ga,Mn)As/GaAs interface has been studied by X-ray photoemission. Ga(0.95)Mn(0.05)As layers were capped with GaAs of different thickness 4, 6 and 8ML, and Mn diffusing through the GaAs layers was trapped on the surface by means of amorphous As covering the surface. It was found that the out diffusion is strongly reduced for the 6 ML GaAs film, and… ▽ More Thermally stimulated diffusion of Mn across the (Ga,Mn)As/GaAs interface has been studied by X-ray photoemission. Ga(0.95)Mn(0.05)As layers were capped with GaAs of different thickness 4, 6 and 8ML, and Mn diffusing through the GaAs layers was trapped on the surface by means of amorphous As covering the surface. It was found that the out diffusion is strongly reduced for the 6 ML GaAs film, and for the 8 ML film no Mn could be detected. △ Less

Submitted 23 December, 2009; originally announced December 2009.

Comments: 9 pages, 3 figures

Electron spectroscopic studies of nanowires formed by (GaMn)As growth on GaAs(111)B

Authors: J. Adell, I. Ulfat, J. Sadowski, L. Ilver, J. Kanski

Abstract: Valence band photoemission with photon energies around the Mn2p excitation threshold has been used to study the development of nanowires catalyzed by MnAs particles. A gradual change in the spectra with increasing nanowire length is observed, such that the resonant photoemission eventually dominates over the Auger decay channel. The change is ascribed to dilution of Mn, showing that Mn is transf… ▽ More Valence band photoemission with photon energies around the Mn2p excitation threshold has been used to study the development of nanowires catalyzed by MnAs particles. A gradual change in the spectra with increasing nanowire length is observed, such that the resonant photoemission eventually dominates over the Auger decay channel. The change is ascribed to dilution of Mn, showing that Mn is transferred from the MnAs particles into the nanowires. △ Less

Submitted 1 July, 2009; originally announced July 2009.

Comments: 14 pages, 4 figures

Formation of Epitaxial MnBi Layers on (Ga,Mn)As

Authors: J. Adell, M. Adell, I. Ulfat, L. Ilver, J. Sadowski, J. Kanski

Abstract: The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of Mn… ▽ More The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before clear surface degradation occurs. △ Less

Submitted 6 March, 2009; originally announced March 2009.

Comments: 18 pages, 5 figures

High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic cap**

Authors: J. Sadowski, J. Z. Domagala, V. Osinniy, J. Kanski, M. Adell, L. Ilver, C. Hernandez, F. Terki, S. Charar, D. Maude

Abstract: Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic cap** layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic cap** at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn intersti… ▽ More Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic cap** layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic cap** at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn interstitials from GaMnAs volume. △ Less

Submitted 29 January, 2006; v1 submitted 26 January, 2006; originally announced January 2006.

Comments: 17 pages including 6 figures

Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers

Authors: J. Sadowski, M. Adell, J. Kanski, L. Ilver, E. Janik, E. Lusakowska, J. Z. Domagala, R. Brucas, M. Hanson

Abstract: Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As cap**. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnA… ▽ More Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As cap**. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnAs, are smooth and well-ordered (1x2), and are well suited for continued epitaxial growth. △ Less

Submitted 4 April, 2005; v1 submitted 4 April, 2005; originally announced April 2005.

Comments: 12 pages, 4 figures

Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"

Authors: M. Adell, J. Kanski, L. Ilver, V. Stanciu, P. Svedlindh

Abstract: The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion of Mn interstitials. We show that the annealing-induced modifications are strongly accelerated if the treatment is carried out under As cap**. This means that the modification rate is not limited by the diffusion pro… ▽ More The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion of Mn interstitials. We show that the annealing-induced modifications are strongly accelerated if the treatment is carried out under As cap**. This means that the modification rate is not limited by the diffusion process, but rather by the surface trap** of the diffusing species. △ Less

Submitted 1 December, 2004; originally announced December 2004.

Comments: 4 pages, 1 figure

Post-growth annealing of GaMnAs under As cap** - an alternative way to increase Tc

Authors: M. Adell, V. Stanciu, J. Kanski, L. Ilver, J. Sadowski, J. Z. Domagala, P. Svedlindh, F. Terki, C. Hernandez, S. Charar

Abstract: We demonstrate that in situ post-growth annealing of GaMnAs layers under As cap** is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier. We demonstrate that in situ post-growth annealing of GaMnAs layers under As cap** is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier. △ Less

Submitted 15 November, 2004; v1 submitted 24 June, 2004; originally announced June 2004.

Comments: 13 pages, 4 figures

Photoemission studies of the annealing induced modifications of (Ga,Mn)As

Authors: M. Adell, L. Ilver, J. Kanski, J. Sadowski, R. Mathieu

Abstract: Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that the Curie temperature is strongly correlated to the separation between the Fermi level and the valence band maximum. Valence band photoemission shows that the M… ▽ More Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that the Curie temperature is strongly correlated to the separation between the Fermi level and the valence band maximum. Valence band photoemission shows that the Mn3d spectrum is modified by the annealing treatments △ Less

Submitted 16 April, 2004; originally announced April 2004.

Comments: 4 pages, 5 figures

Ferromagnetism and interlayer exchange coupling in short period (Ga,Mn)As/GaAs superlattices

Authors: R. Mathieu, P. Svedlindh, J. Sadowski, K. Swiatek, M. Karlsteen, J. Kanski, L. Ilver

Abstract: Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period Ga$_{0.93}$Mn$_{0.07}$As/GaAs superlattices exhibit a paramagnetic-to-ferromagnetic phase transition close to 60K, for thicknesses of (Ga,Mn)As down to 23 Å. For Ga$_{0.96}$Mn$_{0.04}$As/GaAs superlattices o… ▽ More Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period Ga$_{0.93}$Mn$_{0.07}$As/GaAs superlattices exhibit a paramagnetic-to-ferromagnetic phase transition close to 60K, for thicknesses of (Ga,Mn)As down to 23 Å. For Ga$_{0.96}$Mn$_{0.04}$As/GaAs superlattices of similar dimensions, the Curie temperature associated with the ferromagnetic transition is found to oscillate with the thickness of non magnetic spacer. The observed oscillations are related to an interlayer exchange interaction mediated by the polarized holes of the (Ga,Mn)As layers. △ Less

Submitted 19 June, 2002; originally announced June 2002.

Comments: REVTeX 4 style; 4 pages, 2 figures

Journal ref: Appl. Phys. Lett. 81, 3013 (2002)

Photoemission studies of Ga$_{1-x}$Mn$_{x}$As: Mn-concentration dependent properties

Authors: H. Asklund, L. Ilver, J. Kanski, J. Sadowski, R. Mathieu

Abstract: Using angle-resolved photoemission, we have investigated the development of the electronic structure and the Fermi level pinnning in Ga$_{1-x}$Mn$_{x}$As with Mn concentrations in the range 1--6%. We find that the Mn-induced changes in the valence-band spectra depend strongly on the Mn concentration, suggesting that the interaction between the Mn ions is more complex than assumed in earlier stud… ▽ More Using angle-resolved photoemission, we have investigated the development of the electronic structure and the Fermi level pinnning in Ga$_{1-x}$Mn$_{x}$As with Mn concentrations in the range 1--6%. We find that the Mn-induced changes in the valence-band spectra depend strongly on the Mn concentration, suggesting that the interaction between the Mn ions is more complex than assumed in earlier studies. The relative position of the Fermi level is also found to be concentration-dependent. In particular we find that for concentrations around 3.5--5% it is located very close to the valence-band maximum, which is in the range where metallic conductivity has been reported in earlier studies. For concentration outside this range, larger as well as smaller, the Fermi level is found to be pinned at about 0.15 eV higher energy. △ Less

Submitted 8 September, 2002; v1 submitted 15 December, 2001; originally announced December 2001.

Comments: REVTeX style; 7 pages, 3 figures

Journal ref: Phys. Rev. B 66, 115319 (2002)

Structural and magnetic properties of GaMnAs layers with high Mn content grown by Migration Enhanced Epitaxy on GaAs(100) substrates

Authors: J. Sadowski, R. Mathieu, P. Svedlindh, J. Z. Domagala, J. Bak - Misiuk, K. Swiatek, M. Karlsteen, J. Kanski, L. Ilver, H. Asklund, U. Sodervall

Abstract: We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn atoms made it possible to grow single crystalline GaMnAs layers at very low substrate temperature, at which conventional molecular beam epitaxial growth under excess As supply is not possible due to As… ▽ More We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn atoms made it possible to grow single crystalline GaMnAs layers at very low substrate temperature, at which conventional molecular beam epitaxial growth under excess As supply is not possible due to As condensation. Secondary ion mass spectroscopy and X-ray diffraction measurements confirmed a higher Mn content in the films grown by this method in comparison to the GaMnAs layers grown by low temperature molecular beam epitaxy. The lattice constant of hypothetical zinc-blende structure MnAs is determined to be 5.9 Å, which deviates somewhat from previously reported values. This deviation is ascribed to growth-condition dependent density of point defects. It is stressed that this effect must be taken into account for any assessment of Mn content from X-ray diffraction data. Magnetization measurements showed an onset of ferromagnetic ordering around 75 K for the GaMnAs layer with 10% Mn. This means that the trend of falling Curie temperatures with increasing Mn concentrations above 5.5% is broken. We tentatively assign this to the variation of the carrier concentration, including contributions from donor and acceptor centers formed by antisite defects and Mn do**, and increased density of magnetically active Mn ions. △ Less

Submitted 6 March, 2001; originally announced March 2001.

Comments: No LaTeX source; gzipped postscript text + 3 gzipped postscript figures

Journal ref: Appl. Phys. Lett. 78, 3271 (2001)