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Photoemission angular distribution beyond the single wavevector description of photoelectron final states
Authors:
Hiroaki Tanaka,
Shota Okazaki,
Yuto Fukushima,
Kaishu Kawaguchi,
Ayumi Harasawa,
Takushi Iimori,
Fumio Komori,
Masashi Arita,
Ryo Mori,
Kenta Kuroda,
Takao Sasagawa,
Takeshi Kondo
Abstract:
We develop a simulation procedure for angle-resolved photoemission spectroscopy (ARPES), where a photoelectron wave function is set to be an outgoing plane wave in a vacuum associated with the emitted photoelectron wave packet. ARPES measurements on the transition metal dichalcogenide $1T$-$\mathrm{Ti}\mathrm{S}_2$ are performed, and our simulations exhibit good agreement with experiments. Analysi…
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We develop a simulation procedure for angle-resolved photoemission spectroscopy (ARPES), where a photoelectron wave function is set to be an outgoing plane wave in a vacuum associated with the emitted photoelectron wave packet. ARPES measurements on the transition metal dichalcogenide $1T$-$\mathrm{Ti}\mathrm{S}_2$ are performed, and our simulations exhibit good agreement with experiments. Analysis of our calculated final state wave functions quantitatively visualizes that they include various waves due to the boundary condition and the uneven crystal potential. These results show that a more detailed investigation of the photoelectron final states is necessary to fully explain the photon-energy- and light-polarization-dependent ARPES spectra.
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Submitted 22 June, 2024; v1 submitted 10 November, 2023;
originally announced November 2023.
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Broken Screw Rotational Symmetry in the Near-Surface Electronic Structure of $AB$-Stacked Crystals
Authors:
Hiroaki Tanaka,
Shota Okazaki,
Masaru Kobayashi,
Yuto Fukushima,
Yosuke Arai,
Takushi Iimori,
Mikk Lippmaa,
Kohei Yamagami,
Yoshinori Kotani,
Fumio Komori,
Kenta Kuroda,
Takao Sasagawa,
Takeshi Kondo
Abstract:
We investigate the electronic structure of $2H$-$\mathrm{Nb}\mathrm{S}_2$ and $h$-$\mathrm{BN}$ by angle-resolved photoemission spectroscopy (ARPES) and photoemission intensity calculations. Although in bulk form, these materials are expected to exhibit band degeneracy in the $k_z=π/c$ plane due to screw rotation and time-reversal symmetries, we observe gapped band dispersion near the surface. We…
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We investigate the electronic structure of $2H$-$\mathrm{Nb}\mathrm{S}_2$ and $h$-$\mathrm{BN}$ by angle-resolved photoemission spectroscopy (ARPES) and photoemission intensity calculations. Although in bulk form, these materials are expected to exhibit band degeneracy in the $k_z=π/c$ plane due to screw rotation and time-reversal symmetries, we observe gapped band dispersion near the surface. We extract from first-principles calculations the near-surface electronic structure probed by ARPES and find that the calculated photoemission spectra from the near-surface region reproduce the gapped ARPES spectra. Our results show that the near-surface electronic structure can be qualitatively different from the bulk one due to partially broken nonsymmorphic symmetries.
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Submitted 29 March, 2024; v1 submitted 2 August, 2023;
originally announced August 2023.
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Spin-polarized saddle points in the topological surface states of the elemental Bismuth revealed by a pump-probe spin-resolved ARPES
Authors:
Yuto Fukushima,
Kaishu Kawaguchi,
Kenta Kuroda,
Masayuki Ochi,
Hiroaki Tanaka,
Ayumi Harasawa,
Takushi Iimori,
Zhigang Zhao,
Shuntaro Tani,
Koichiro Yaji,
Shik Shin,
Fumio Komori,
Yohei Kobayashi,
Takeshi Kondo
Abstract:
We use a pump-probe, spin-, and angle-resolved photoemission spectroscopy (ARPES) with a 10.7 eV laser accessible up to the Brillouin zone edge, and reveal for the first time the entire band structure, including the unoccupied side, for the elemental bismuth (Bi) with the spin-polarized surface states. Our data identify Bi as in a strong topological insulator phase ($Z_2$=1) against the prediction…
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We use a pump-probe, spin-, and angle-resolved photoemission spectroscopy (ARPES) with a 10.7 eV laser accessible up to the Brillouin zone edge, and reveal for the first time the entire band structure, including the unoccupied side, for the elemental bismuth (Bi) with the spin-polarized surface states. Our data identify Bi as in a strong topological insulator phase ($Z_2$=1) against the prediction of most band calculations. We unveil that the unoccupied topological surface states possess spin-polarized saddle points yielding the van Hove singularity, providing an excellent platform for the future development of opto-spintronics.
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Submitted 31 March, 2023;
originally announced March 2023.
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Time-, spin-, and angle-resolved photoemission spectroscopy with a 1-MHz 10.7-eV pulse laser
Authors:
Kaishu Kawaguchi,
Kenta Kuroda,
Z. Zhao,
S. Tani,
A. Harasawa,
Y. Fukushima,
H. Tanaka,
R. Noguchi,
T. Iimori,
K. Yaji,
M. Fujisawa,
S. Shin,
F. Komori,
Y. Kobayashi,
Takeshi Kondo
Abstract:
We describe a setup of time-, spin-, and angle-resolved photoemission spectroscopy (tr-SARPES) employing a 10.7-eV ($λ$=115.6 nm) pulse laser at 1-MHz repetition rate as a probe photon source. This equipment effectively combines technologies of a high-power Yb:fiber laser, ultraviolet-driven harmonic generation in Xe gas, and a SARPES apparatus equipped with very-low-energy-electron-diffraction (V…
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We describe a setup of time-, spin-, and angle-resolved photoemission spectroscopy (tr-SARPES) employing a 10.7-eV ($λ$=115.6 nm) pulse laser at 1-MHz repetition rate as a probe photon source. This equipment effectively combines technologies of a high-power Yb:fiber laser, ultraviolet-driven harmonic generation in Xe gas, and a SARPES apparatus equipped with very-low-energy-electron-diffraction (VLEED) spin detectors. A high repetition rate (1 MHz) of the probe laser allows experiments with the photoemission space-charge effects significantly reduced, despite a high flux of 10$^{13}$ photons/s on the sample. The relatively high photon energy (10.7 eV) also brings the capability of observing a wide momentum range that covers the entire Brillouin zone of many materials while ensuring high momentum resolution. The experimental setup overcomes a low efficiency of spin-resolved measurements, which gets even more severe for the pump-probed unoccupied states, and affords for investigating ultrafast electron and spin dynamics of modern quantum materials with energy and time resolutions of 25 meV and 360 fs, respectively.
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Submitted 22 April, 2023; v1 submitted 29 March, 2023;
originally announced March 2023.
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Two-dimensional superconductivity of the Ca-intercalated graphene on SiC: vital role of the interface between monolayer graphene and the substrate
Authors:
Haruko Toyama,
Ryota Akiyama,
Satoru Ichinokura,
Mizuki Hashizume,
Takushi Iimori,
Yukihiro Endo,
Rei Hobara,
Tomohiro Matsui,
Kentaro Horii,
Shunsuke Sato,
Toru Hirahara,
Fumio Komori,
Shuji Hasegawa
Abstract:
Ca-intercalation has opened a way for superconductivity in graphene on SiC. However, the atomic and electronic structures being critical for superconductivity are still under discussion. We find the essential role of the interface between monolayer graphene and the SiC substrate for superconductivity. In the Ca-intercalation process, at the interface a carbon layer terminating SiC changes to graph…
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Ca-intercalation has opened a way for superconductivity in graphene on SiC. However, the atomic and electronic structures being critical for superconductivity are still under discussion. We find the essential role of the interface between monolayer graphene and the SiC substrate for superconductivity. In the Ca-intercalation process, at the interface a carbon layer terminating SiC changes to graphene by Ca-termination of SiC (monolayer graphene becomes bilayer) with inducing more carriers than a free-standing model. Then, Ca is intercalated in-between graphene layers, which shows superconductivity with the updated critical temperature ($T_{C}$) of up to 5.7 K. In addition, the relation between $T_{C}$ and the normal-state conductivity is unusual, "dome-shape". These findings are beyond the simple C6CaC6 model in which s-wave BCS superconductivity is theoretically predicted. This work proposes a general picture of the intercalation-induced superconductivity in graphene on SiC, and shed the light on the potential of superconductivity induced by other intercalants.
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Submitted 25 November, 2021;
originally announced November 2021.
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Formation of graphene nanoribbons on the macrofacets of vicinal 6H-SiC(0001) surfaces
Authors:
Kohei Fukuma,
Anton Visikovskiy,
Takushi Iimori,
Fumio Komori,
Satoru Tanaka
Abstract:
Thermal decomposition of vicinal 6H-SiC(0001) surfaces with off-angles toward the $[1\bar{1}00]$ direction results in the appearance of pairs of (0001) macroterraces and $(1\bar{1}0n)$ macrofacets covered with graphene, as follows. A carpet-like carbon layer grows on the surface, covering both the macroterraces and macrofacets; it forms $(6\sqrt{3} \times 6\sqrt{3})$ buffer layer on the former one…
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Thermal decomposition of vicinal 6H-SiC(0001) surfaces with off-angles toward the $[1\bar{1}00]$ direction results in the appearance of pairs of (0001) macroterraces and $(1\bar{1}0n)$ macrofacets covered with graphene, as follows. A carpet-like carbon layer grows on the surface, covering both the macroterraces and macrofacets; it forms $(6\sqrt{3} \times 6\sqrt{3})$ buffer layer on the former ones, whereas its partial periodic bonding with the SiC steps on the latter ones generates a pseudo-graphene nanoribbon (pseudo-GNR) array. The nanoribbons have a width of 2 nm and are aligned in the $[1\bar{2}10]$ direction with a spatial periodicity of 3.3 nm. Here, the Raman spectroscopy analysis of the pseudo-GNR array showed the absence of the 2D peak and the polarization dependence of the $G$ and $D$ peaks, which is typical of the armchair edge nanoribbon.
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Submitted 25 October, 2021;
originally announced October 2021.
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Scaling law for the Rashba-type spin splitting in quantum well films
Authors:
Ryo Noguchi,
Kenta Kuroda,
Mitsuaki Kawamura,
Koichiro Yaji,
Ayumi Harasawa,
Takushi Iimori,
Shik Shin,
Fumio Komori,
Taisuke Ozaki,
Takeshi Kondo
Abstract:
We use laser-based spin- and angle-resolved photoemission spectroscopy (laser-SARPES) with high-resolution, and experimentally determine, for the first time, the Rashba-parameters of quantum well states (QWSs) systematically changing with the film thickness and the quantum numbers, through the observation of the Ag films grown on an Au(111) substrate. The data are very well reproduced by the theor…
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We use laser-based spin- and angle-resolved photoemission spectroscopy (laser-SARPES) with high-resolution, and experimentally determine, for the first time, the Rashba-parameters of quantum well states (QWSs) systematically changing with the film thickness and the quantum numbers, through the observation of the Ag films grown on an Au(111) substrate. The data are very well reproduced by the theoretical calculations based on the density functional theory. Most importantly, we find a scaling law for the Rashba parameter ($α_{\rm R}$) that the magnitude of $α_{\rm R}$ is scaled by the charge density at the interface and the spin-orbit coupling ratio between the film and the substrate, and it is expressed by a single straight line regardless of the film thickness and the quantum numbers. The new finding not only is crucial to understand the Rashba effect in QWSs but also gives a foundation of film growth engineering to fine-tune the spin splitting in 2D heterostructure systems.
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Submitted 21 December, 2020;
originally announced December 2020.
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Twisted bilayer graphene fabricated by direct bonding in a high vacuum
Authors:
Hitoshi Imamura,
Anton Visikovskiy,
Ryosuke Uotani,
Takashi Kajiwara,
Hiroshi Ando,
Takushi Iimori,
Kota Iwata,
Toshio Miyamachi,
Kan Nakatsuji,
Kazuhiko Mase,
Tetsuroh Shirasawa,
Fumio Komori,
Satoru Tanaka
Abstract:
Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to…
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Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to obtain. In this study, we resolved these problems by directly transferring the easy-to-exfoliate CVD-grown graphene on SiC substrate to graphene in a high vacuum without using any transfer assisting medium and observed electronic band modulations due to the strong interlayer coupling.
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Submitted 9 May, 2020; v1 submitted 4 May, 2020;
originally announced May 2020.
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Ultrafast unbalanced electron distributions in quasicrystalline 30° twisted bilayer graphene
Authors:
T. Suzuki,
T. Iimori,
S. J. Ahn,
Y. Zhao,
M. Watanabe,
J. Xu,
M. Fujisawa,
T. Kanai,
N. Ishii,
J. Itatani,
K. Suwa,
H. Fukidome,
S. Tanaka,
J. R. Ahn,
K. Okazaki,
S. Shin,
F. Komori,
I. Matsuda
Abstract:
Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle Θ has become an important degree of freedom for exploring novel states of matters, i.e. two-dimensional superconductivity ( Θ = 1.1°)6, 7 and a two-dimensional quasicrystal (Θ = 30°)8, 9. We report herein experimental observation on the photo-induced ultrafast dynamics of Dirac fermions in t…
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Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle Θ has become an important degree of freedom for exploring novel states of matters, i.e. two-dimensional superconductivity ( Θ = 1.1°)6, 7 and a two-dimensional quasicrystal (Θ = 30°)8, 9. We report herein experimental observation on the photo-induced ultrafast dynamics of Dirac fermions in the quasicrystalline 30° twisted bilayer graphene (QCTBG). We discover that hot carriers are asymmetrically distributed between the two graphene layers, followed by the opposing femtosecond relaxations, by using time- and angle-resolved photoemission spectroscopy. The key mechanism involves the differing carrier transport between layers and the transient do** from the substrate interface. The ultrafast dynamics scheme continues after the Umklapp scattering, which is induced by the incommensurate interlayer stacking of the quasi-crystallinity. The dynamics in the atomic layer opens the possibility of new applications and creates interdisciplinary links in the optoelectronics of van der Waals crystals.
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Submitted 10 May, 2019;
originally announced May 2019.
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Alkali-metal induced band structure deformation investigated by angle-resolved photoemission spectroscopy and first-principles calculations
Authors:
S. Ito,
B. Feng,
M. Arita,
T. Someya,
W. -C. Chen,
A. Takayama,
T. Iimori,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
S. -J. Tang,
F. Komori,
I. Matsuda
Abstract:
Alkali-metal adsorption on the surface of materials is widely used for in situ surface electron do**, particularly for observing unoccupied band structures by angle-resolved photoemission spectroscopy (ARPES). However, the effects of alkali-metal atoms on the resulting band structures have yet to be fully investigated, owing to difficulties in both experiments and calculations. Here, we combine…
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Alkali-metal adsorption on the surface of materials is widely used for in situ surface electron do**, particularly for observing unoccupied band structures by angle-resolved photoemission spectroscopy (ARPES). However, the effects of alkali-metal atoms on the resulting band structures have yet to be fully investigated, owing to difficulties in both experiments and calculations. Here, we combine ARPES measurements on cesium-adsorbed ultrathin bismuth films with first-principles calculations of the electronic charge densities and demonstrate a simple method to evaluate alkali-metal induced band deformation. We reveal that deformation of bismuth surface bands is directly correlated with vertical charge-density profiles at each electronic state of bismuth. In contrast, a change in the quantized bulk bands is well described by a conventional rigid-band-shift picture. We discuss these two aspects of the band deformation holistically, considering spatial distributions of the electronic states and cesium-bismuth hybridization, and provide a prescription for applying alkali-metal adsorption to a wide range of materials.
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Submitted 15 May, 2018; v1 submitted 30 November, 2017;
originally announced December 2017.
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Dirac fermions in borophene
Authors:
Baojie Feng,
Osamu Sugino,
Ro-Ya Liu,
** Zhang,
Ryu Yukawa,
Mitsuaki Kawamura,
Takushi Iimori,
Howon Kim,
Yukio Hasegawa,
Hui Li,
Lan Chen,
Kehui Wu,
Hiroshi Kumigashira,
Fumio Komori,
Tai-Chang Chiang,
Sheng Meng,
Iwao Matsuda
Abstract:
Honeycomb structures of group IV elements can host massless Dirac fermions with non-trivial Berry phases. Their potential for electronic applications has attracted great interest and spurred a broad search for new Dirac materials especially in monolayer structures. We present a detailed investigation of the β12 boron sheet, which is a borophene structure that can form spontaneously on a Ag(111) su…
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Honeycomb structures of group IV elements can host massless Dirac fermions with non-trivial Berry phases. Their potential for electronic applications has attracted great interest and spurred a broad search for new Dirac materials especially in monolayer structures. We present a detailed investigation of the β12 boron sheet, which is a borophene structure that can form spontaneously on a Ag(111) surface. Our tight-binding analysis revealed that the lattice of the β12-sheet could be decomposed into two triangular sublattices in a way similar to that for a honeycomb lattice, thereby hosting Dirac cones. Furthermore, each Dirac cone could be split by introducing periodic perturbations representing overlayer-substrate interactions. These unusual electronic structures were confirmed by angle-resolved photoemission spectroscopy and validated by first-principles calculations. Our results suggest monolayer boron as a new platform for realizing novel high-speed low-dissipation devices.
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Submitted 2 February, 2017;
originally announced February 2017.
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Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement
Authors:
S. Ito,
B. Feng,
M. Arita,
A. Takayama,
R. -Y. Liu,
T. Someya,
W. -C. Chen,
T. Iimori,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
S. -J. Tang,
F. Komori,
K. Kobayashi,
T. -C. Chiang,
I. Matsuda
Abstract:
The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave…
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The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave functions precisely determine the surface and bulk electronic structures, which unambiguously show nontrivial topology. The present results not only prove the fundamental property of Bi but also introduce a capability of the quantum-confinement approach.
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Submitted 3 December, 2016; v1 submitted 11 May, 2016;
originally announced May 2016.
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Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy
Authors:
Takashi Kajiwara,
Yuzuru Nakamori,
Anton Visikovskiy,
Takushi Iimori,
Fumio Komori,
Kan Nakatsuji,
Kazuhiko Mase,
Satoru Tanaka
Abstract:
We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide of (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate,…
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We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide of (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate, [1-100], well-ordered GNRs with predominantly armchair edges are obtained. These structures, the high density GNRs, enable us to observe the electronic structure at K-points by angle-resolved photoemission spectroscopy, showing clear band-gap opening of at least 0.14 eV.
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Submitted 16 October, 2012;
originally announced October 2012.
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STM observation of initial growth of Sn atoms on Ge(001) surface
Authors:
K. Tomatsu,
K. Nakatsuji,
T. Iimori,
F. Komori
Abstract:
We have studied initial growth of Sn atoms on Ge(001) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(001) substrate at room temperature, the Sn atoms form two kinds of one-dimensional structures composed of ad-dimers with different alignment, in the <310> and the <110> directions, and epitaxial structures. For Sn deposition onto the substrat…
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We have studied initial growth of Sn atoms on Ge(001) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(001) substrate at room temperature, the Sn atoms form two kinds of one-dimensional structures composed of ad-dimers with different alignment, in the <310> and the <110> directions, and epitaxial structures. For Sn deposition onto the substrate at 80 K, the population of the dimer chains aligning in the <310> direction increases. The diffusion barrier of the Sn adatom on the substrate kinetically determines the population of the dimer chain. We propose that the diffusion barrier height depends on surface strain induced by the adatom. The two kinds of dimer chains appearing on the Ge(001) and Si(001) surfaces with adatoms of the group-IV elements are systematically interpreted in terms of the surface stain.
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Submitted 22 January, 2007;
originally announced January 2007.
