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Exciton dynamics in CdTe/CdZnTe quantum well
Authors:
A. V. Mikhailov,
A. S. Kurdyubov,
E. S. Khramtsov,
I. V. Ignatiev,
B. F. Gribakin,
S. Cronenberger,
D. Scalbert,
M. R. Vladimirova,
R. André
Abstract:
Exciton energy structure and population dynamics in a wide CdTe/CdZnTe quantum well are studied by spectrally-resolved pump-probe spectroscopy. Multiple excitonic resonances in reflectance spectra are observed and identified by solving numerically three-dimensional Schrödinger equation. The pump-probe reflectivity signal is shown to be dominated by the photoinduced nonradiative broadening of the e…
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Exciton energy structure and population dynamics in a wide CdTe/CdZnTe quantum well are studied by spectrally-resolved pump-probe spectroscopy. Multiple excitonic resonances in reflectance spectra are observed and identified by solving numerically three-dimensional Schrödinger equation. The pump-probe reflectivity signal is shown to be dominated by the photoinduced nonradiative broadening of the excitonic resonances, while pump-induced exciton energy shift and reduction of the oscillator strength appear to be negligible. This broadening is induced by the reservoir of dark excitons with large in-plane wave vector, which are coupled to the the bright excitons states. The dynamics of the pump-induced nonradiative broadening observed experimentally is characterised by three components: signal build up on the scale of tens of picoseconds (i) and bi-exponential decay on the scale of one nanosecond (ii) and ten nanosecons (iii). Possible mechanisms of the reservoir population and depletion responsible for this behaviour are discussed.
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Submitted 14 April, 2023;
originally announced April 2023.
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Nonlinear behaviour of the nonradiative exciton reservoir in quantum wells
Authors:
A. S. Kurdyubov,
A. V. Trifonov,
A. V. Mikhailov,
Yu. P. Efimov,
S. A. Eliseev,
V. A. Lovtcius,
I. V. Ignatiev
Abstract:
Excitons and free charge carriers with large wave vectors form a nonradiative reservoir, which can strongly affect properties of bright excitons due to the exciton-exciton and exciton-carrier interactions. In the present work, the dynamics of quasiparticles in the reservoir at different areal densities is experimentally studied in a GaAs/AlGaAs quantum well using a time-resolved reflectance spectr…
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Excitons and free charge carriers with large wave vectors form a nonradiative reservoir, which can strongly affect properties of bright excitons due to the exciton-exciton and exciton-carrier interactions. In the present work, the dynamics of quasiparticles in the reservoir at different areal densities is experimentally studied in a GaAs/AlGaAs quantum well using a time-resolved reflectance spectroscopy of nonradiative broadening of exciton resonances. The population of the reservoir is controlled either by the excitation power or by the temperature of the structure under study. The dynamics is quantitatively analyzed in the framework of the model developed earlier [Kurdyubov et al., Phys. Rev. B {\bf 104}, 035414 (2021)]. The model considers several dynamic processes, such as scattering of photoexcited excitons into the reservoir, dissociation of excitons into free charge carriers and the reverse process, carrier-induced exciton scattering into the light cone depleting the reservoir, thermally activated nonradiative losses of charge carriers. We have found that competition of these processes leads to highly nonlinear dynamics of reservoir excitons, although their density is far below the exciton Mott transition densities. Characteristic rates of the processes and their dependencies on the excitation power and the temperature are determined.
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Submitted 2 December, 2022;
originally announced December 2022.
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Exciton-exciton and exciton-charge carrier interaction and the exciton collisional broadening in GaAs/AlGaAs quantum wells
Authors:
B. F. Gribakin,
E. S. Khramtsov,
A. V. Trifonov,
I. V. Ignatiev
Abstract:
Wave functions of heavy-hole excitons in GaAs/Al$_{0.3}$Ga$_{0.7}$As square quantum wells (QWs) of various widths are calculated by the direct numerical solution of a three-dimensional Schrödinger equation using a finite-difference scheme. These wave functions are then used to determine the exciton-exciton, exciton-electron and exciton-hole fermion exchange constants in a wide range of QW widths (…
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Wave functions of heavy-hole excitons in GaAs/Al$_{0.3}$Ga$_{0.7}$As square quantum wells (QWs) of various widths are calculated by the direct numerical solution of a three-dimensional Schrödinger equation using a finite-difference scheme. These wave functions are then used to determine the exciton-exciton, exciton-electron and exciton-hole fermion exchange constants in a wide range of QW widths (5-150 nm). Additionally, the spin-dependent matrix elements of elastic exciton-exciton, exciton-electron and exciton-hole scattering are calculated. From these matrix elements, the collisional broadening of the exciton resonance is obtained within the Born approximation as a function of the areal density of excitons, electrons and holes respectively for QW widths of 5, 15, 30 and 50 nm. The obtained numerical results are compared with other theoretical works.
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Submitted 15 July, 2021;
originally announced July 2021.
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Dynamics and control of nonradiative excitons - free carriers mixture in GaAs/AlGaAs quantum wells
Authors:
A. S. Kurdyubov,
A. V. Trifonov,
B. F. Gribakin,
P. S. Grigoryev,
I. Ya. Gerlovin,
A. V. Mikhailov,
I. V. Ignatiev,
Yu. P. Efimov,
S. A. Eliseev,
V. A. Lovtcius,
M. Aßmann,
A. V. Kavokin
Abstract:
Dynamics of nonradiative excitons with large in-plane wave vectors forming a so-called reservoir is experimentally studied in a high-quality semiconductor structure containing a 14-nm shallow GaAs/Al$_{0.03}$Ga$_{0.97}$As quantum well by means of the non-degenerate pump-probe spectroscopy. The exciton dynamics is visualized via the dynamic broadening of the heavy-hole and light-hole exciton resona…
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Dynamics of nonradiative excitons with large in-plane wave vectors forming a so-called reservoir is experimentally studied in a high-quality semiconductor structure containing a 14-nm shallow GaAs/Al$_{0.03}$Ga$_{0.97}$As quantum well by means of the non-degenerate pump-probe spectroscopy. The exciton dynamics is visualized via the dynamic broadening of the heavy-hole and light-hole exciton resonances caused by the exciton-exciton scattering. Under the non-resonant excitation free carriers are optically generated. In this regime the exciton dynamics is strongly affected by the exciton-carrier scattering. In particular, if the carriers of one sign are prevailing, they efficiently deplete the reservoir of the nonradiative excitons inducing their scattering into the light cone. A simple model of the exciton dynamics is developed, which considers the energy relaxation of photocreated electrons and holes, their coupling into excitons, and exciton scattering into the light cone. The model well reproduces the exciton dynamics observed experimentally both at the resonant and nonresonant excitation. Moreover, it correctly describes the profiles of the photoluminescence pulses studied experimentally. The efficient exciton-electron interaction is further experimentally verified by the control of the exciton density in the reservoir when an additional excitation creates electrons depleting the reservoir.
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Submitted 17 March, 2021;
originally announced March 2021.
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Exciton-polariton interference controlled by electric field
Authors:
D. K. Loginov,
P. A. Belov,
V. G. Davydov,
I. Ya. Gerlovin,
I. V. Ignatiev,
A. V. Kavokin
Abstract:
Linear in the wave-vector terms of an electron Hamiltonian play an important role in topological insulators and spintronic devices. Here we demonstrate how an external electric field controls the magnitude of a linear-in-K term in the exciton Hamiltonian in wide GaAs quantum wells. The dependence of this term on the applied field in a high quality sample was studied by means of the differential re…
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Linear in the wave-vector terms of an electron Hamiltonian play an important role in topological insulators and spintronic devices. Here we demonstrate how an external electric field controls the magnitude of a linear-in-K term in the exciton Hamiltonian in wide GaAs quantum wells. The dependence of this term on the applied field in a high quality sample was studied by means of the differential reflection spectroscopy. An excellent agreement between the experimental data and the results of calculations using semi-classical non-local dielectric response model confirms the validity of the method and paves the way for the realisation of excitonic Datta-and-Das transistors. In full analogy with the spin-orbit transistor proposed by Datta and Das [Appl. Phys. Lett. {\bf 56}, 665 (1990)], the switch between positive and negative interference of exciton polaritons propagating forward and backward in a GaAs film is achieved by application of an electric field with non-zero component in the plane of the quantum well layer.
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Submitted 9 March, 2020;
originally announced March 2020.
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Nanosecond-scale magneto-exciton energy oscillations in quantum wells
Authors:
A. V. Trifonov,
E. S. Khramtsov,
K. V. Kavokin,
I. V. Ignatiev,
A. V. Kavokin,
Y. P. Efimov,
S. A. Eliseev,
P. Yu. Shapochkin,
M. Bayer
Abstract:
We report on the experimental evidence for a nanosecond time-scale spin memory based on nonradiative excitons. The effect manifests itself in magnetic-field-induced oscillations of the energy of the optically active (radiative) excitons. The oscillations detected by a spectrally-resolved pump-probe technique applied to a GaAs/AlGaAs quantum well structure in a transverse magnetic field persist ove…
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We report on the experimental evidence for a nanosecond time-scale spin memory based on nonradiative excitons. The effect manifests itself in magnetic-field-induced oscillations of the energy of the optically active (radiative) excitons. The oscillations detected by a spectrally-resolved pump-probe technique applied to a GaAs/AlGaAs quantum well structure in a transverse magnetic field persist over a time scale, which is orders of magnitude longer than the characteristic decoherence time in the system. The effect is attributed to the spin-dependent electron-electron exchange interaction of the optically active and inactive excitons. The spin relaxation time of the electrons belonging to nonradiative excitons appears to be much longer than the hole spin relaxation time.
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Submitted 21 September, 2018;
originally announced September 2018.
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Impurity-induced modulation of terahertz waves in optically excited GaAs
Authors:
A. S. Kurdyubov,
A. V. Trifonov,
I. Ya. Gerlovin,
I. V. Ignatiev,
A. V. Kavokin
Abstract:
The effect of the photoinduced absorption of terahertz (THz) radiation in a semi-insulating GaAs crystal is studied by the pulsed THz transmission spectroscopy. We found that a broad-band modulation of THz radiation may be induced by a low-power optical excitation in the spectral range of the impurity absorption band in GaAs. The measured modulation achieves 80\%. The amplitude and frequency chara…
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The effect of the photoinduced absorption of terahertz (THz) radiation in a semi-insulating GaAs crystal is studied by the pulsed THz transmission spectroscopy. We found that a broad-band modulation of THz radiation may be induced by a low-power optical excitation in the spectral range of the impurity absorption band in GaAs. The measured modulation achieves 80\%. The amplitude and frequency characteristics of the resulting THz modulator are critically dependent on the carrier density and relaxation dynamics in the conduction band of GaAs. In semi-insulating GaAs crystals, the carrier density created by the impurity excitation is controlled by the rate of their relaxation to the impurity centers. The relaxation rate and, consequently, the frequency characteristics of the modulator can be optimized by an appropriate choice of the impurities and their concentrations. The modulation parameters can be also controlled by the crystal temperature and by the power and photon energy of the optical excitation. These experiments pave the way to the low-power fast optically-controlled THz modulation, imaging, and beam steering.
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Submitted 11 July, 2017;
originally announced August 2017.
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Spin dynamics of quadrupole nuclei in InGaAs quantum dots
Authors:
M. S. Kuznetsova,
R. V. Cherbunin,
I. Ya. Gerlovin,
I. V. Ignatiev,
S. Yu. Verbin,
D. R. Yakovlev,
D. Reuter,
A. D. Wieck,
M. Bayer
Abstract:
Photoluminescence polarization is experimentally studied for samples with (In,Ga)As/GaAs selfassembled quantum dots in transverse magnetic field (Hanle effect) under slow modulation of the excitation light polarization from fractions of Hz to tens of kHz. The polarization reflects the evolution of strongly coupled electron-nuclear spin system in the quantum dots. Strong modification of the Hanle c…
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Photoluminescence polarization is experimentally studied for samples with (In,Ga)As/GaAs selfassembled quantum dots in transverse magnetic field (Hanle effect) under slow modulation of the excitation light polarization from fractions of Hz to tens of kHz. The polarization reflects the evolution of strongly coupled electron-nuclear spin system in the quantum dots. Strong modification of the Hanle curves under variation of the modulation period is attributed to the peculiarities of the spin dynamics of quadrupole nuclei, which states are split due to deformation of the crystal lattice in the quantum dots. Analysis of the Hanle curves is fulfilled in the framework of a phenomenological model considering a separate dynamics of a nuclear field BNd determined by the +/- 12 nuclear spin states and of a nuclear field BNq determined by the split-off states +/- 3/2, +/- 5/2, etc. It is found that the characteristic relaxation time for the nuclear field BNd is of order of 0.5 s, while the relaxation of the field BNq is faster by three orders of magnitude.
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Submitted 13 January, 2017;
originally announced January 2017.
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Inversion of Zeeman splitting of exciton states in InGaAs quantum wells
Authors:
P. S. Grigoryev,
O. A. Yugov,
S. A. Eliseev,
Yu. P. Efimov,
V. A. Lovtcius,
V. V. Petrov,
V. F. Sapega,
I. V. Ignatiev
Abstract:
Zeeman splitting of quantum-confined states of excitons in InGaAs quantum wells (QWs) is experimentally found to depend strongly on quantization energy. Moreover, it changes sign when the quantization energy increases with a decrease in the QW width. In the 87-nm QW, the sign change is observed for the excited quantum-confined states, which are above the ground state only by a few meV. A two-step…
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Zeeman splitting of quantum-confined states of excitons in InGaAs quantum wells (QWs) is experimentally found to depend strongly on quantization energy. Moreover, it changes sign when the quantization energy increases with a decrease in the QW width. In the 87-nm QW, the sign change is observed for the excited quantum-confined states, which are above the ground state only by a few meV. A two-step approach for the numerical solution of the two-particle Schroedinger equation, taking into account the Coulomb interaction and valence-band coupling, is used for a theoretical justification of the observed phenomenon. The calculated variation of the g-factor convincingly follows the dependencies obtained in the experiments.
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Submitted 16 August, 2016;
originally announced August 2016.
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Excitons in asymmetric quantum wells
Authors:
P. S. Grigoryev,
A. S. Kurdyubov,
M. S. Kuznetsova,
Yu. P. Efimov,
S. A. Eliseev,
V. V. Petrov,
V. A. Lovtcius,
P. Yu. Shapochkin,
I. V. Ignatiev
Abstract:
Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures with nominally square QWs as well as with triangle-like QWs. Several quantum confined exciton states are experimentally observed as narrow exciton resonances with…
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Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures with nominally square QWs as well as with triangle-like QWs. Several quantum confined exciton states are experimentally observed as narrow exciton resonances with various profiles. A standard approach for the phenomenological analysis of the profiles is generalized by introducing of different phase shifts for the light waves reflected from the QWs at different exciton resonances. Perfect agreement of the phenomenological fit to the experimentally observed exciton spectra for high-quality structures allowed us to obtain reliable parameters of the exciton resonances including the exciton transition energies, the radiative broadenings, and the phase shifts. A direct numerical solution of Schrödinger equation for the heavy-hole excitons in asymmetric QWs is used for microscopic modeling of the exciton resonances. Remarkable agreement with the experiment is achieved when the effect of indium segregation during the heterostructure growth is taken into account. The segregation results in a modification of the potential profile, in particular, in an asymmetry of the nominally square QWs.
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Submitted 11 February, 2016;
originally announced February 2016.
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Excitons in square quantum wells: microscopic modeling and experiment
Authors:
E. S. Khramtsov,
P. A. Belov,
P. S. Grigoryev,
I. V. Ignatiev,
S. Yu. Verbin,
S. A. Eliseev,
Yu. P. Efimov,
V. A. Lovtcius,
V. V. Petrov,
S. L. Yakovlev
Abstract:
The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schroedinger equation. The precise results for the lowest exciton state are obtained by the Hamiltonian discretization using the high-order finite-difference scheme. The microscopic calculations are compared with…
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The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schroedinger equation. The precise results for the lowest exciton state are obtained by the Hamiltonian discretization using the high-order finite-difference scheme. The microscopic calculations are compared with the results obtained by the standard variational approach. The exciton binding energies found by two methods coincide within 0.1 meV for the wide range of QW widths. The radiative decay rate is calculated for QWs of various widths using the exciton wave functions obtained by direct and variational methods. The radiative decay rates are confronted with the experimental data measured for high-quality GaAs/AlGaAs and InGaAs/GaAs QW heterostructures grown by molecular beam epitaxy. The calculated and measured values are in good agreement, though slight differences with earlier calculations of the radiative decay rate are observed.
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Submitted 3 August, 2015;
originally announced August 2015.
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Dynamics of the Energy Relaxation in a Parabolic Quantum Well Laser
Authors:
A. V. Trifonov,
E. D. Cherotchenko,
J. L. Carthy,
I. V. Ignatiev,
A. Tzimis,
S. Tsintzos,
Z. Hatzopoulos,
P. G. Savvidis,
A. V. Kavokin
Abstract:
We explore two parabolic quantum well (PQW) samples, with and without Bragg mirrors, in order to optimise the building blocks of a Bosonic Cascade Laser. The photoluminescence spectra of a PQW microcavity sample is compared against that of a conventional microcavity with embedded quantum wells (QWs) to demonstrate that the weak coupling lasing in a PQW sample can be achieved. The relaxation dynami…
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We explore two parabolic quantum well (PQW) samples, with and without Bragg mirrors, in order to optimise the building blocks of a Bosonic Cascade Laser. The photoluminescence spectra of a PQW microcavity sample is compared against that of a conventional microcavity with embedded quantum wells (QWs) to demonstrate that the weak coupling lasing in a PQW sample can be achieved. The relaxation dynamics in a conventional QW microcavity and in the PQW microcavity was studied by a non-resonant pump-pump excitation method. Strong difference in the relaxation characteristics between the two samples was found. The semi-classical Boltzmann equations were adapted to reproduce the evolution of excitonic populations within the PQW as a function of the pump power and the output intensity evolution as a function of the pump-pump pulse delay. Fitting the PQW data confirms the anticipated cascade relaxation, paving the way for such a system to produce terahertz radiation.
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Submitted 31 August, 2015; v1 submitted 31 July, 2015;
originally announced July 2015.
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Multiple quantum beats of quantum confined exciton states in InGaAs/GaAs quantum well
Authors:
A. V. Trifonov,
I. Ya. Gerlovin,
I. V. Ignatiev,
I. A. Yugova,
R. V. Cherbunin,
Yu. P. Efimov,
S. A. Eliseev,
V. V. Petrov,
A. V. Kavokin
Abstract:
Multiple quantum beats of a system of the coherently excited quantum confined exciton states in a high-quality heterostructure with a wide InGaAs/GaAs quantum well are experimentally detected by the spectrally resolved pump-probe method for the first time. The beat signal is observed as at positive as at negative delays between the pump and probe pulses. A theoretical model is developed, which all…
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Multiple quantum beats of a system of the coherently excited quantum confined exciton states in a high-quality heterostructure with a wide InGaAs/GaAs quantum well are experimentally detected by the spectrally resolved pump-probe method for the first time. The beat signal is observed as at positive as at negative delays between the pump and probe pulses. A theoretical model is developed, which allows one to attribute the QBs at negative delay to the four-wave mixing (FWM) signal detected at the non-standard direction. The beat signal is strongly enhanced by the interference of the FWM wave with the polarization created by the probe pulse. At positive delay, the QBs are due to the mutual interference of the quantum confined exciton states. Several QB frequencies are observed in the experiments, which coincide with the interlevel spacings in the exciton system. The decay time for QBs is of order of several picoseconds at both the positive and negative delays. They are close to the relaxation time of exciton population that allows one to consider the exciton depopulation as the main mechanism of the coherence relaxation in the system under study.
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Submitted 15 July, 2015;
originally announced July 2015.
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Decrease of heavy-hole exciton mass induced by uniaxial stress in GaAs/AlGaAs quantum well
Authors:
D. K. Loginov,
P. S. Grigoryev,
E. V. Ubiyvovk,
Yu. P. Efimov,
S. A. Eliseev,
V. A. Lovtcius,
Yu. P. Petrov,
I. V. Ignatiev
Abstract:
It is experimentally shown that the pressure applied along the twofold symmetry axis of a heterostructure with a wide GaAs/AlGaAs quantum well leads to considerable modification of the polariton reflectance spectra. This effect is treated as the stress-induced decrease of the heavy-hole exciton mass. Theoretical modeling of the effect supports this assumption. The 5\%-decrease of the exciton mass…
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It is experimentally shown that the pressure applied along the twofold symmetry axis of a heterostructure with a wide GaAs/AlGaAs quantum well leads to considerable modification of the polariton reflectance spectra. This effect is treated as the stress-induced decrease of the heavy-hole exciton mass. Theoretical modeling of the effect supports this assumption. The 5\%-decrease of the exciton mass is obtained at pressure P=0.23 GPa.
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Submitted 8 May, 2015;
originally announced May 2015.
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Nontrivial relaxation dynamics of excitons in high-quality InGaAs/GaAs quantum wells
Authors:
A. V. Trifonov,
S. N. Korotan,
A. S. Kurdyubov,
I. Ya. Gerlovin,
I. V. Ignatiev,
Yu. P. Efimov,
S. A. Eliseev,
V. V. Petrov,
Yu. K. Dolgikh,
V. V. Ovsyankin,
A. V. Kavokin
Abstract:
Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a function of temperature, while the linewidths demonstrate a complex and peculiar behavior. At low pum** the widths of all peaks remain quite narrow ($< 0.1$ meV) in…
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Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a function of temperature, while the linewidths demonstrate a complex and peculiar behavior. At low pum** the widths of all peaks remain quite narrow ($< 0.1$ meV) in the whole temperature range studied, $4 - 30K$. At the stronger pum**, the linewidth first increases and than drops down with the temperature rise. Pump-probe experiments show two characteristic time scales in the exciton decay, $< 10$ps and $15 - 45ns$, respectively. We interpret all these data by an interplay between the exciton recombination within the light cone, the exciton relaxation from a non-radiative reservoir to the light cone, and the thermal dissociation of the non-radiative excitons. The broadening of the low energy exciton lines is governed by the radiative recombination and scattering with reservoir excitons while for the higher energy states the linewidths are also dependent on the acoustic phonon relaxation processes.
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Submitted 6 February, 2015; v1 submitted 1 December, 2014;
originally announced December 2014.
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Effect of uniaxial stress on the interference of polaritonic waves in wide quantum wells
Authors:
D. K. Loginov,
A. V. Trifonov,
I. V. Ignatiev
Abstract:
A theory of polaritonic states is developed for a nanostructure with a wide quantum well stressed perpendicular to the growth axis of the heterostructure. The role of the $K$-linear terms appearing in the exciton Hamiltonian under the stress is discussed. Exciton reflectance spectra are theoretically modeled for the nanostructure. It is predicted that the spectral oscillations caused by interferen…
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A theory of polaritonic states is developed for a nanostructure with a wide quantum well stressed perpendicular to the growth axis of the heterostructure. The role of the $K$-linear terms appearing in the exciton Hamiltonian under the stress is discussed. Exciton reflectance spectra are theoretically modeled for the nanostructure. It is predicted that the spectral oscillations caused by interference of the exciton-like and photon-like polariton modes disappear with the increase of applied pressure and then appear again with opposite phase relative to that observed at low pressure. Effects of gyrotropy and convergence of masses of excitons with heavy and light holes due to their mixing by the deformation is also considered. Numerical estimates performed for the GaAs wells show that these effects can be experimentally observed at pressure $P < 1$~GPa for the well widths of a fraction of micron.
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Submitted 23 April, 2014;
originally announced April 2014.
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Nuclear magnetic resonances in (In,Ga)As/GaAs quantum dots studied by resonant optical pum**
Authors:
M. S. Kuznetsova,
K. Flisinski,
I. Ya. Gerlovin,
M. Yu. Petrov,
I. V. Ignatiev,
S. Yu. Verbin,
D. R. Yakovlev,
D. Reuter,
A. D. Wieck,
M. Bayer
Abstract:
The photoluminescence polarizations of (In,Ga)As/GaAs quantum dots annealed at different temperatures are studied as a function of external magnetic field (Hanle curves). In these dependencies, remarkable resonant features appear due to all-optical nuclear magnetic resonances (NMR) for optical excitation with modulated circular polarization. Application of an additional radio-frequency field synch…
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The photoluminescence polarizations of (In,Ga)As/GaAs quantum dots annealed at different temperatures are studied as a function of external magnetic field (Hanle curves). In these dependencies, remarkable resonant features appear due to all-optical nuclear magnetic resonances (NMR) for optical excitation with modulated circular polarization. Application of an additional radio-frequency field synchronously with the polarization modulation strongly modifies the NMR features. The resonances can be related to transitions between different nuclear spin states split by the strain-induced gradient of the crystal field and by the externally applied magnetic field. A theoretical model is developed to simulate quadrupole and Zeeman splittings of the nuclear spins in a strained quantum dot. Comparison with the experiment allows us to uniquely identify the observed resonances. The large broadening of the NMR resonances is attributed to variations of the quadrupole splitting within the quantum dot volume, which is well described by the model.
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Submitted 11 March, 2014; v1 submitted 11 February, 2014;
originally announced February 2014.
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Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations
Authors:
M. S. Kuznetsova,
K. Flisinski,
I. Ya. Gerlovin,
I. V. Ignatiev,
K. V. Kavokin,
S. Yu. Verbin,
D. R. Yakovlev,
D. Reuter,
A. D. Wieck,
M. Bayer
Abstract:
The role of nuclear spin fluctuations in the dynamic polarization of nuclear spins by electrons is investigated in (In,Ga)As quantum dots. The photoluminescence polarization under circularly polarized optical pum** in transverse magnetic fields (Hanle effect) is studied. A weak additional magnetic field parallel to the optical axis is used to control the efficiency of nuclear spin cooling and th…
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The role of nuclear spin fluctuations in the dynamic polarization of nuclear spins by electrons is investigated in (In,Ga)As quantum dots. The photoluminescence polarization under circularly polarized optical pum** in transverse magnetic fields (Hanle effect) is studied. A weak additional magnetic field parallel to the optical axis is used to control the efficiency of nuclear spin cooling and the sign of nuclear spin temperature. The shape of the Hanle curve is drastically modified with changing this control field, as observed earlier in bulk semiconductors and quantum wells. However, the standard nuclear spin cooling theory, operating with the mean nuclear magnetic field (Overhauser field), fails to describe the experimental Hanle curves in a certain range of control fields. This controversy is resolved by taking into account the nuclear spin fluctuations owed to the finite number of nuclei in the quantum dot. We propose a model describing cooling of the nuclear spin system by electron spins experiencing fast vector precession in the random Overhauser fields of nuclear spin fluctuations. The model allows us to accurately describe the measured Hanle curves and to determine the parameters of the electron-nuclear spin system of the studied quantum dots.
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Submitted 18 March, 2013;
originally announced March 2013.
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Manifestations of the hyperfine interaction between electron and nuclear spins in singly-charged (In,Ga)As/GaAs quantum dots
Authors:
Roman V. Cherbunin,
Thomas Auer,
Alex Greilich,
Ivan V. Ignatiev,
Ruth Oulton,
Manfred Bayer,
Dmitri R. Yakovlev,
Gleb G. Kozlov,
Dirk Reuter,
Andreas D. Wieck
Abstract:
The nuclear spin fluctuations (NSF) as well as the dynamic nuclear polarization (DNP) and their effects on the electron spins in negatively charged (In,Ga)As/GaAs quantum dots have been studied by polarized pump-probe and photoluminescence spectroscopy techniques. The effective magnetic field of the NSF is about 30 mT at low excitation power. The NSF distribution becomes highly anisotropic at st…
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The nuclear spin fluctuations (NSF) as well as the dynamic nuclear polarization (DNP) and their effects on the electron spins in negatively charged (In,Ga)As/GaAs quantum dots have been studied by polarized pump-probe and photoluminescence spectroscopy techniques. The effective magnetic field of the NSF is about 30 mT at low excitation power. The NSF distribution becomes highly anisotropic at strong optical excitation by circularly polarized light with periodically alternating helicity. This phenomenon is attributed to a decrease of the nuclear spin entropy due to the hyperfine interaction with polarized electron spins. The DNP is limited to small values for intense, but short photoexcitation.
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Submitted 21 May, 2008;
originally announced May 2008.
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Effect of annealing on the hyperfine interaction in InAs/GaAs quantum dots
Authors:
M. Yu. Petrov,
I. V. Ignatiev,
S. V. Poltavtsev,
A. Greilich,
A. Bauschulte,
D. R. Yakovlev,
M. Bayer
Abstract:
The hyperfine interaction of an electron with nuclei in the annealed self-assembled InAs/GaAs quantum dots is theoretically analyzed. For this purpose, the annealing process, and energy structure of the quantum dots are numerically modeled. The modeling is verified by comparison of the calculated optical transitions and of the experimental data on photoluminescence for set of the annealed quantu…
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The hyperfine interaction of an electron with nuclei in the annealed self-assembled InAs/GaAs quantum dots is theoretically analyzed. For this purpose, the annealing process, and energy structure of the quantum dots are numerically modeled. The modeling is verified by comparison of the calculated optical transitions and of the experimental data on photoluminescence for set of the annealed quantum dots. The localization volume of the electron in the ground state and the partial contributions of In, Ga, and As nuclei to the hyperfine interaction are calculated as functions of the annealing temperature. It is established that the contribution of indium nuclei into the hyperfine interaction becomes predominant up to high annealing temperatures (T = 980 C) when the In content in the quantum dots does not exceed 25%. Effect of the nuclear spin fluctuations on the electron spin polarization is numerically modeled. Effective field of the fluctuations is found to be in good agreement with experimental data available.
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Submitted 4 January, 2008; v1 submitted 26 October, 2007;
originally announced October 2007.
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Nuclear spin effects in singly negatively charged InP quantum dots
Authors:
Bipul Pal,
Sergey Yu. Verbin,
Ivan V. Ignatiev,
Michio Ikezawa,
Yasuaki Masumoto
Abstract:
Experimental investigation of nuclear spin effects on the electron spin polarization in singly negatively charged InP quantum dots is reported. Pump-probe photoluminescence measurements of electron spin relaxation in the microsecond timescale are used to estimate the time-period $T_{N}$ of the Larmor precession of nuclear spins in the hyperfine field of electrons. We find $T_{N}$ to be $\sim 1$…
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Experimental investigation of nuclear spin effects on the electron spin polarization in singly negatively charged InP quantum dots is reported. Pump-probe photoluminescence measurements of electron spin relaxation in the microsecond timescale are used to estimate the time-period $T_{N}$ of the Larmor precession of nuclear spins in the hyperfine field of electrons. We find $T_{N}$ to be $\sim 1$ $μ$s at $T \approx 5$ K, under the vanishing external magnetic field. From the time-integrated measurements of electron spin polarization as a function of a longitudinally applied magnetic field at $T \approx 5$ K, we find that the Overhauser field appearing due to the dynamic nuclear polarization increases linearly with the excitation power, though its magnitude remains smaller than 10 mT up to the highest excitation power (50 mW) used in these experiments. The effective magnetic field of the frozen fluctuations of nuclear spins is found to be 15 mT, independent of the excitation power.
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Submitted 3 February, 2007;
originally announced February 2007.
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Nuclear spin effects in negatively charged InP quantum dots
Authors:
S. Yu. Verbin,
B. Pal,
M. Ikezawa,
I. V. Ignatiev,
Y. Masumoto
Abstract:
Effects of both the dynamic nuclear polarization (DNP) created by circularly polarized light and the fluctuations of average nuclear spin in a quantum dot (QD) on the electron spin orientation are studied for singly negatively charged InP QDs. From the dependence of the negative circular polarization of photoluminescence on the applied longitudinal magnetic field, the hyperfine field B_N of a fe…
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Effects of both the dynamic nuclear polarization (DNP) created by circularly polarized light and the fluctuations of average nuclear spin in a quantum dot (QD) on the electron spin orientation are studied for singly negatively charged InP QDs. From the dependence of the negative circular polarization of photoluminescence on the applied longitudinal magnetic field, the hyperfine field B_N of a few mT appearing due to DNP and the effective magnetic field B_f of a few tens of mT arising from nuclear spin fluctuations (NSF) are estimated. A lifetime of about 1 microsecond is estimated for NSF.
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Submitted 1 August, 2006;
originally announced August 2006.
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Millisecond-range electron spin memory in singly-charged InP quantum dots
Authors:
Bipul Pal,
Michio Ikezawa,
Yasuaki Masumoto,
Ivan V. Ignatiev
Abstract:
We report millisecond-range spin memory of resident electrons in an ensemble of InP quantum dots (QDs) under a small magnetic field of 0.1 T applied along the optical excitation axis at temperatures up to about 5 K. A pump-probe photoluminescence (PL) technique is used for optical orientation of electron spins by the pump pulses and for study of spin relaxation over the long time scale by measur…
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We report millisecond-range spin memory of resident electrons in an ensemble of InP quantum dots (QDs) under a small magnetic field of 0.1 T applied along the optical excitation axis at temperatures up to about 5 K. A pump-probe photoluminescence (PL) technique is used for optical orientation of electron spins by the pump pulses and for study of spin relaxation over the long time scale by measuring the degree of circular polarization of the probe PL as a function of pump-probe delay. Dependence of spin decay rate on magnetic field and temperature suggests two-phonon processes as the dominant spin relaxation mechanism in this QDs at low temperatures.
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Submitted 2 November, 2005;
originally announced November 2005.
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Effect of nuclear spins on the electron spin dynamics in negatively charged InP quantum dots
Authors:
I. V. Ignatiev,
S. Yu. Verbin,
I. Ya. Gerlovin,
W. Maruyama,
B. Pal,
Y. Masumoto
Abstract:
Kinetics of polarized photoluminescence of the negatively charged InP quantum dots in weak magnetic field is studied experimentally. Effect of both the nuclear spin fluctuations and the dynamical nuclear polarization on the electron spin orientation is observed.
Kinetics of polarized photoluminescence of the negatively charged InP quantum dots in weak magnetic field is studied experimentally. Effect of both the nuclear spin fluctuations and the dynamical nuclear polarization on the electron spin orientation is observed.
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Submitted 29 August, 2005;
originally announced August 2005.
