-
Deposition and photoluminescence of zinc gallium oxide thin films with varied stoichiometry made by reactive magnetron co-sputtering
Authors:
Martins Zubkins,
Edvards Strods,
Viktors Vibornijs,
Anatolijs Sarakovskis,
Ramūnas Nedzinskas,
Reinis Ignatans,
Edgars Butanovs,
Juris Purans,
Andris Azens
Abstract:
This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron co-sputtering from liquid/solid gallium/zinc targets onto fused quartz substrates; the temperature of the substrate is varied from room temperature (RT) to 800°C. The…
▽ More
This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron co-sputtering from liquid/solid gallium/zinc targets onto fused quartz substrates; the temperature of the substrate is varied from room temperature (RT) to 800°C. The sputtering process is effectively controlled by fixing the sputtering power of one of the targets and controlling the power of the other target by plasma optical emission spectroscopy. The method, in conjunction with oxygen flow adjustment, enables the production of near-stoichiometric films at any temperature used. The composition analysis suggests a few at.% oxygen deficiency in the films. The resulting deposition rate is at least an order of magnitude higher compared to the commonly used radio-frequency sputtering from a ceramic ZnO:Ga2O3 target. Deposited onto unheated substrates, the films with Ga:Zn {\approx} 2 are X-ray amorphous. Well-defined X-ray diffraction peaks of spinel ZnGa2O4 start to appear at a substrate temperature of 300°C. The surface of the as-deposited films is dense and exhibits a fine-featured structure observed in electron microscopy images. Increasing the deposition temperature from RT to 800°C eliminates defects and improves crystallinity, which for the films with Ga:Zn ratio close to 2 results in an increase in the optical band gap from 4.6 eV to 5.1 eV. Room temperature photoluminescence established the main peak at 3.1 eV (400 nm); a similar peak in Ga2O3 is ascribed to oxygen-vacancy related transitions. A prominent feature around 2.9 eV (428 nm) is attributed to self-activation center of the octahedral Ga-O groups in the spinel lattice of ZnGa2O4. It was found that photoluminescence from ZnGa2O4 depends significantly on the ratio Ga:Zn.
△ Less
Submitted 5 February, 2024;
originally announced February 2024.
-
Induced Giant Piezoelectricity in Centrosymmetric Oxides
Authors:
D. -S. Park,
M. Hadad,
L. M. Rimer,
R. Ignatans,
D. Spirito,
V. Esposito,
V. Tileli,
N. Gauquelin,
D. Chezganov,
D. Jannis J. Verbeeck,
S. Gorfman,
N. Pryds,
P. Muralt,
D. Damjanovic
Abstract:
Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric material must possess a non centrosymmetric crystal structure. For more than a century, this remains the major obstacle for finding new piezoelectric materials. We circumvent this limitation by breaking the crystallographic symmetry, and inducing large and sustai…
▽ More
Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric material must possess a non centrosymmetric crystal structure. For more than a century, this remains the major obstacle for finding new piezoelectric materials. We circumvent this limitation by breaking the crystallographic symmetry, and inducing large and sustainable piezoelectric effects in centrosymmetric materials by electric field induced rearrangement of oxygen vacancies Surprisingly, the results show the generation of extraordinarily large piezoelectric responses d33 ~200,000 pm/V), in cubic fluorite Gd-doped CeO2-x films, which is two orders of magnitude larger than in the presently best known lead based piezoelectric relaxor ferroelectric oxide. These findings open opportunities to design new piezoelectric materials from environmentally friendly centrosymmetric ones.
△ Less
Submitted 10 February, 2022; v1 submitted 1 November, 2021;
originally announced November 2021.
-
Latent mechanisms of polarization switching from in situ electron microscopy observations
Authors:
Reinis Ignatans,
Maxim Ziatdinov,
Rama Vasudevan,
Mani Valleti,
Vasiliki Tileli,
Sergei V. Kalinin
Abstract:
In situ scanning transmission electron microscopy enables observation of the domain dynamics in ferroelectric materials as a function of externally applied bias and temperature. The resultant data sets contain a wealth of information on polarization switching and phase transition mechanisms. However, identification of these mechanisms from observational data sets has remained a problem due to a la…
▽ More
In situ scanning transmission electron microscopy enables observation of the domain dynamics in ferroelectric materials as a function of externally applied bias and temperature. The resultant data sets contain a wealth of information on polarization switching and phase transition mechanisms. However, identification of these mechanisms from observational data sets has remained a problem due to a large variety of possible configurations, many of which are degenerate. Here, we introduce an approach based on rotationally invariant variational autoencoder (VAE), which enables learning a latent space representation of the data with multiple real-space rotationally equivalent variants mapped to the same latent space descriptors. By varying the size of training sub-images in the VAE, we tune the degree of complexity in the structural descriptors from simple domain wall detection to the identification of switching pathways. This yields a powerful tool for the exploration of the dynamic data in mesoscopic electron, scanning probe, optical, and chemical imaging. Moreover, this work adds to the growing body of knowledge of incorporating physical constraints into the machine and deep-learning methods to improve learned descriptors of physical phenomena.
△ Less
Submitted 25 November, 2020; v1 submitted 23 November, 2020;
originally announced November 2020.
-
Decoding the mechanisms of phase transitions from in situ microscopy observations
Authors:
Mani Valleti,
Reinis Ignatans,
Sergei V. Kalinin,
Vasiliki Tileli
Abstract:
Temperature-induced phase transition in BaTiO3 has been explored using the machine learning analysis of domain morphologies visualized via variable-temperature scanning transmission electron microscopy (STEM) imaging data. This approach is based on the multivariate statistical analysis of the time or temperature dependence of the statistical descriptors of the system, derived in turn from the cate…
▽ More
Temperature-induced phase transition in BaTiO3 has been explored using the machine learning analysis of domain morphologies visualized via variable-temperature scanning transmission electron microscopy (STEM) imaging data. This approach is based on the multivariate statistical analysis of the time or temperature dependence of the statistical descriptors of the system, derived in turn from the categorical classification of observed domain structures or projection on the continuous parameter space of the feature extraction-dimensionality reduction transform. The proposed workflow offers a powerful tool for the exploration of the dynamic data based on the statistics of image representation as a function of the external control variable to visualize the transformation pathways during phase transitions and chemical reactions. This can include the mesoscopic STEM data as demonstrated here, but also optical, chemical imaging, etc. data. It can further be extended to the higher dimensional spaces, for example, analysis of the combinatorial libraries of materials compositions.
△ Less
Submitted 18 November, 2020;
originally announced November 2020.
-
Individual Barkhausen pulses of ferroelastic nanodomains
Authors:
Reinis Ignatans,
Dragan Damjanovic,
Vasiliki Tileli
Abstract:
Ferroelectric materials, upon electric field biasing, display polarization discontinuities known as Barkhausen jumps, a subclass of a more general phenomenon known as crackling noise. Herein, we follow at the nanoscale the motion of 90 degree needle domains induced by an electric field applied in the polarization direction of the prototypical ferroelectric BaTiO3, inside a transmission electron mi…
▽ More
Ferroelectric materials, upon electric field biasing, display polarization discontinuities known as Barkhausen jumps, a subclass of a more general phenomenon known as crackling noise. Herein, we follow at the nanoscale the motion of 90 degree needle domains induced by an electric field applied in the polarization direction of the prototypical ferroelectric BaTiO3, inside a transmission electron microscope. The nature of motion and periodicity of Barkhausen pulses leads to real-time visualization of distinctive interaction mechanisms of the domains with each other but without coming into contact, a mechanism that has not been observed before, or/and with the lattice where the domain walls appear to be moving through the dielectric medium relatively freely, experiencing weak Peierls-like potentials. Control over the kinetics of ferroelastic domain wall motion can lead to novel nanoelectronic devices pertinent to computing and storage applications.
△ Less
Submitted 11 November, 2020;
originally announced November 2020.
-
Local hard and soft pinning of 180$^\circ$ domain walls in BaTiO$_3$ probed by in situ transmission electron microscopy
Authors:
Reinis Ignatans,
Dragan Damjanovic,
Vasiliki Tileli
Abstract:
We report on the electric field response of 180 degree nanodomain walls in BaTiO$_3$ using in situ electrical biasing in transmission electron microscopy (TEM). The sample is biased on a micro-device designed for reliable testing whose key attributes are confirmed by finite element calculations. The presence of weakly charged zig-zag domain walls at room temperature is attributed to the geometric…
▽ More
We report on the electric field response of 180 degree nanodomain walls in BaTiO$_3$ using in situ electrical biasing in transmission electron microscopy (TEM). The sample is biased on a micro-device designed for reliable testing whose key attributes are confirmed by finite element calculations. The presence of weakly charged zig-zag domain walls at room temperature is attributed to the geometric confinement of the device. The motion of the domain walls under the applied electric field allows to extract local P-E loops where distinct domain wall pinning in deep and random energy potential profiles, characteristic for hard and soft ferroelectrics, respectively, are observed. Hard domain wall pinning results in asymmetrical loops typical for "hard" ferroelectrics while the soft domain wall pinning follows Rayleigh-like behaviour. All effects are measured locally and directly from the imaged domain structure.
△ Less
Submitted 4 November, 2020;
originally announced November 2020.
