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Gas dependent hysteresis in MoS$_2$ field effect transistors
Authors:
F. Urban,
F. Giubileo,
A. Grillo,
L. Iemmo,
G. Luongo,
M. Passacantando,
T. Foller,
L. Madauß,
E. Pollmann,
M. P. Geller,
D. Oing,
M. Schleberger,
A. Di Bartolomeo
Abstract:
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although…
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We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although the gas adsorption does not modify the conduction type, we demonstrate a correlation between hysteresis width and adsorption energy onto the MoS2 surface. We show that hysteresis is controllable by pressure and/or gas type. Hysteresis features two well-separated current levels, especially when gases are stably adsorbed on the channel, which can be exploited in memory devices.
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Submitted 27 June, 2023;
originally announced June 2023.
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Vacuum gauge from ultrathin MoS2 transistor
Authors:
A. Di Bartolomeo,
A. Pelella,
A. Grillo,
F. Urban,
L. Iemmo,
E. Faella,
N. Martucciello,
F. Giubileo
Abstract:
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-…
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We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-dependent O2, N2 and H2O molecule adsorption that affect the n-do** of the MoS2 channel.
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Submitted 8 June, 2020;
originally announced June 2020.
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Field emission characteristics of InSb patterned nanowires
Authors:
Filippo Giubileo,
Maurizio Passacantando,
Francesca Urban,
Alessandro Grillo,
Laura Iemmo,
Aniello Pelella,
Curtis Goosney,
Ray LaPierre,
Antonio Di Bartolomeo
Abstract:
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracte…
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InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of about 1$μA$, corresponding to a current density as high as 10$^4$ A/cm$^2$. Stability and robustness of nanowire is probed by monitoring field emission current for about three hours. By tuning the cathode-anode separation distance in the range 500nm - 1300nm, the field enhancement factor and the turn-on field exhibit a non-monotonic dependence, with a maximum enhancement $β\simeq $ 78 and a minimum turn-on field $E_{ON} \simeq$ 0.033 V/nm for a separation d =900nm. The reduction of spatial separation between nanowires and the increase of diameter cause the reduction of the field emission performance, with reduced field enhancement ($β<$ 60) and increased turn-on field ($E_{ON} \simeq $ 0.050 V/nm). Finally, finite element simulation of the electric field distribution in the system demonstrates that emission is limited to an effective area near the border of the nanowire top surface, with annular shape and maximum width of 10 nm.
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Submitted 28 April, 2020;
originally announced April 2020.
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Electron irradiation of metal contacts in monolayer MoS$_2$ Field-Effect Transistors
Authors:
A. Pelella,
O. Kharsah,
A. Grillo,
F. Urban,
M. Passacantando,
F. Giubileo,
L. Iemmo,
S. Sleziona,
E. Pollmann,
L. Madauß,
M. Schleberger,
A. Di Bartolomeo
Abstract:
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. H…
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This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. Hence, we propose that the transistor current enhancement is due to thermally induced interfacial reactions that lower the contact Schottky barriers. We also show that the electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects.
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Submitted 2 April, 2020;
originally announced April 2020.
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Field emission in ultrathin PdSe2 back-gated transistors
Authors:
A. Di Bartolomeo,
A. Pelella,
F. Urban,
A. Grillo,
L. Iemmo,
M. Passacantando,
X. Liu,
F. Giubileo
Abstract:
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In th…
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We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material.
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Submitted 13 February, 2020;
originally announced February 2020.
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Field Emission Characterization of MoS2 Nanoflowers
Authors:
Filippo Giubileo,
Alessandro Grillo,
Maurizio Passacantando,
Francesca Urban,
Laura Iemmo,
Giuseppe Luongo,
Aniello Pelella,
Melanie Loveridge,
Luca Lozzi,
Antonio Di Bartolomeo
Abstract:
Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down…
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Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down to 1-100um2. We demonstrate that MoS2 nanoflowers can be competitive with other well-established field emitters. Indeed, we show that a stable field emission current can be measured with a turn-on field as low as 12 V um-1 and a field enhancement factor up to 880 at 600nm cathode-anode separation distance.
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Submitted 18 June, 2019;
originally announced June 2019.
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Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
Authors:
Antonio Di Bartolomeo,
Aniello Pelella,
Xiaowei Liu,
Feng Miao,
Maurizio Passacantando,
Filippo Giubileo,
Alessandro Grillo,
Laura Iemmo,
Francesca Urban,
Shi-Jun Liang
Abstract:
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environmen…
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A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments. The prevailing p-type transport observed at room pressure is reversibly turned into dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The pressure control can be exploited to symmetrize and stabilize the transfer characteristic of the device as required in high-performance logic circuits. The transistor is immune from short channel effects but is affected by trap states with characteristic times in the order of minutes. The channel conductance, dramatically reduced by the electron irradiation during scanning electron microscope imaging, is restored after several minutes anneal at room temperature. The work paves the way toward the exploitation of PdSe2 in electronic devices by providing an experiment-based and deeper understanding of charge transport in PdSe2 transistors subjected to electrical stress and other external agents.
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Submitted 1 February, 2019;
originally announced February 2019.
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A WSe2 vertical field emission transistor
Authors:
Antonio Di Bartolomeo,
Francesca Urban,
Maurizio Passacantando,
Niall McEvoy,
Lisanne Peters,
Laura Iemmo,
Giuseppe Luongo,
Francesco Romeo,
Filippo Giubileo
Abstract:
We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Sch…
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We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.e. the extraction of electrons by quantum tunnelling, even from the flat part of the WSe2 monolayers. Electron emission occurs under an electric field ~100 V μm^(-1) and exhibit good time stability. Remarkably, the field emission current can be modulated by the back-gate voltage. The first field-emission vertical transistor based on WSe2 monolayer is thus demonstrated and can pave the way to further optimize new WSe2 based devices for use in vacuum electronics.
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Submitted 18 August, 2018; v1 submitted 6 August, 2018;
originally announced August 2018.
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Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
Authors:
Antonio Di Bartolomeo,
Alessandro Grillo,
Francesca Urban,
Laura Iemmo,
Filippo Giubileo,
Giuseppe Luongo,
Giampiero Amato,
Luca Croin,
Linfeng Sun,
Shi-Jun Liang,
Lay Kee Ang
Abstract:
We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to…
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We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to-back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottky-barrier limited injection at the grounded junction. The device achieves a photo responsivity greater than 2.5 AW-1 under 5 mWcm-2 white-LED light. By comparing two- and four-probe measurements, we demonstrate that the hysteresis and persistent photoconductivity exhibited by the transistor are peculiarities of the MoS2 channel rather than effects of the Ti/MoS2 interface.
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Submitted 6 August, 2018;
originally announced August 2018.
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Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
Authors:
Filippo Giubileo,
Laura Iemmo,
Maurizio Passacantando,
Francesca Urban,
Giuseppe Luongo,
Lingfeng Sun,
Giampiero Amato,
Emanuele Enrico,
Antonio Di Bartolomeo
Abstract:
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapp…
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Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapped in the SiO2 gate oxide, during the irradiation. The transistor channel current is increased up to three order of magnitudes after the exposure to an irradiation dose of 100e-/nm2. Finally, a complete field emission characterization of the MoS2 flake, achieving emission stability for several hours and a minimum turn-on field of about 20 V/um with a field enhancement factor of about 500 at anode-cathode distance of 1.5um, demonstrates the suitability of few-layer MoS2 as two-dimensional emitting surface for cold-cathode applications.
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Submitted 3 August, 2018;
originally announced August 2018.
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Graphene-Silicon Schottky diodes for photodetection
Authors:
Antonio Di Bartolomeo,
Giuseppe Luongo,
Laura Iemmo,
Filippo Giubileo
Abstract:
We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the interna…
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We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the internal gain by impact ionization caused by the enhanced field on the nanotips.
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Submitted 27 October, 2017;
originally announced October 2017.
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Field emission from self-catalyzed GaAs nanowires
Authors:
Filippo Giubileo,
Antonio Di Bartolomeo,
Laura Iemmo,
Giuseppe Luongo,
Maurizio Passacantando,
Eero Koivusalo,
Teemu V. Hakkarainen,
Mircea Guina
Abstract:
We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental data are analyzed in the framework of Fowler-Nordheim theory. We demonstrate stable current up to 10$^{-7}$ A emitted from the tip of single nanowire, with field…
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We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental data are analyzed in the framework of Fowler-Nordheim theory. We demonstrate stable current up to 10$^{-7}$ A emitted from the tip of single nanowire, with field enhancement factor $β$ up to 112 at anode-cathode distance d=350 nm. A linear dependence of $β$ on the anode-cathode distance is experimentally found. We also show that the presence of a Ga catalyst droplet suppresses the emission of current from the nanowire tip. This allows detection of field emission from the nanowire sidewalls, which occurs with reduced field enhancement factor and stability. This study further extends the GaAs technology to vacuum electronics applications.
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Submitted 14 September, 2017;
originally announced September 2017.
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Graphene enhanced field emission from InP nanocrystals
Authors:
L. Iemmo,
A. Di Bartolomeo,
F. Giubileo,
G. Luongo,
M. Passacantando,
G. Niu,
F. Hatami,
O. Skibitzki,
T. Schroeder
Abstract:
We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find t…
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We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.
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Submitted 6 August, 2017;
originally announced August 2017.
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Hysteresis in the transfer characteristics of MoS2 transistors
Authors:
Antonio Di Bartolomeo,
Luca Genovese,
Filippo Giubileo,
Laura Iemmo,
Giuseppe Luongo,
Tobias Foller,
Marika Schleberger
Abstract:
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-fac…
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We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trap** at the MoS2/SiO2 interface. We conclude that intrinsic defects in MoS2, such as S vacancies, which result in effective positive charge trap**, play an important role, besides H2O and O2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices.
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Submitted 3 August, 2017;
originally announced August 2017.
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Transport and field emission properties of buckypapers obtained from aligned carbon nanotubes
Authors:
F. Giubileo,
L. Iemmo,
G. Luongo,
N. Martucciello,
M. Raimondo,
L. Guadagno,
M. Passacantando,
K. Lafdi,
A. Di Bartolomeo
Abstract:
We produce 120 um thick buckypapers from aligned carbon nanotubes. Transport characteristics evidence ohmic behavior in a wide temperature range, non linearity appearing in the current-voltage curves only close to 4.2 K. The temperature dependence of the conductance shows that transport is mostly due to thermal fluctuation induced tunneling, although to explain the whole temperature range from 4.2…
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We produce 120 um thick buckypapers from aligned carbon nanotubes. Transport characteristics evidence ohmic behavior in a wide temperature range, non linearity appearing in the current-voltage curves only close to 4.2 K. The temperature dependence of the conductance shows that transport is mostly due to thermal fluctuation induced tunneling, although to explain the whole temperature range from 4.2 K to 430 K a further linear contribution is necessary. The field emission properties are measured by means of a nanocontrolled metallic tip acting as collector electrode to access local information about buckypaper properties from areas as small as 1 um2. Emitted current up to 10-5A and turn-on field of about 140V/um are recorded. Long operation, stability and robustness of emitters have been probed by field emission intensity monitoring for more than 12 hours at pressure of 10-6 mbar. Finally, no tuning of the emitted current was observed for in plane applied currents in the buckypaper.
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Submitted 26 January, 2017;
originally announced January 2017.
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Low-energy electron-irradiation effect on transport properties of graphene field effect transistor
Authors:
F. Giubileo,
A. Di Bartolomeo,
N. Martucciello,
F. Romeo,
L. Iemmo,
P. Romano,
M. Passacantando
Abstract:
We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific contact resistivity $ρ_c \simeq 19 kΩμm^2$ and carrier mobility as high as 4000 cm$^2$V$^{-1}$s$^{-1}$. By using a highly doped p-Si/SiO$_2$ substrate as back gate,…
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We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific contact resistivity $ρ_c \simeq 19 kΩμm^2$ and carrier mobility as high as 4000 cm$^2$V$^{-1}$s$^{-1}$. By using a highly doped p-Si/SiO$_2$ substrate as back gate, we analyze the transport properties of the device and the dependence on the pressure and on the electron bombardment. We demonstrate that low energy irradiation is detrimental on the transistor current capability, resulting in an increase of the contact resistance and a reduction of the carrier mobility even at electron doses as low as 30 $e^-/nm^2$. We also show that the irradiated devices recover by returning to their pristine state after few repeated electrical measurements.
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Submitted 2 August, 2016;
originally announced August 2016.
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Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
Authors:
Antonio Di Bartolomeo,
Filippo Giubileo,
Giuseppe Luongo,
Laura Iemmo,
Nadia Martucciello,
Gang Niu,
Mirko Fraschke,
Oliver Skibitzki,
Thomas Schroeder,
Grzegorz Lupina
Abstract:
We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor ga…
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We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.
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Submitted 22 July, 2016;
originally announced July 2016.
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Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
Authors:
Antonio Di Bartolomeo,
Filippo Giubileo,
Laura Iemmo,
Francesco Romeo,
Saverio Russo,
Selim Unal,
Maurizio Passacantando,
Valentina Grossi,
Anna Maria Cucolo
Abstract:
We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, re…
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We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at high voltages. We report a field-emission current density as high as 1uA/um between graphene flakes. These findings are essential for the miniaturization of atomically thin devices.
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Submitted 30 January, 2016; v1 submitted 18 January, 2016;
originally announced January 2016.
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Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics
Authors:
Antonio Di Bartolomeo,
Filippo Giubileo,
Francesco Romeo,
Paolo Sabatino,
Giovanni Carapella,
Laura Iemmo,
Thomas Schroeder,
Grzegorz Lupina
Abstract:
We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb…
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We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.
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Submitted 4 August, 2015;
originally announced August 2015.
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Field emission from single multi-wall carbon nanotubes
Authors:
M. Passacantando,
F. Bussolotti,
S. Santucci,
A. Di Bartolomeo,
F. Giubileo,
L. Iemmo,
A. M. Cucolo
Abstract:
Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled car…
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Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled carbon nanotubes, reproducible and quite stable emission current behaviour has been obtained with a dependence on the applied voltage well described by a series resistance modified Fowler-Nordheim model. A turn-on field of about 30 V/um and a field enhancement factor of around 100 at a cathode-anode distance of the order of 1 um have been evaluated. Finally, the effect of selective electron beam irradiation on the nanotube field emission capabilities has been extensively investigated.
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Submitted 6 March, 2008;
originally announced March 2008.
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Local probing of the field emission stability of vertically aligned multiwalled carbon nanotubes
Authors:
F. Giubileo,
A. Di Bartolomeo,
A. Scarfato,
L. Iemmo,
F. Bobba,
M. Passacantando,
S. Santucci,
A. M. Cucolo
Abstract:
Metallic cantilever in high vacuum atomic force microscope has been used as anode for field emission experiments from densely packed vertically aligned multi-walled carbon nanotubes. The high spatial resolution provided by the scanning probe technique allowed precise setting of the tip-sample distance in the submicron region. The dimension of the probe (curvature radius below 50nm) allowed to me…
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Metallic cantilever in high vacuum atomic force microscope has been used as anode for field emission experiments from densely packed vertically aligned multi-walled carbon nanotubes. The high spatial resolution provided by the scanning probe technique allowed precise setting of the tip-sample distance in the submicron region. The dimension of the probe (curvature radius below 50nm) allowed to measure current contribution from sample areas smaller than 1um^2. The study of long-term stability evidenced that on these small areas the field emission current remains stable (within 10% fluctuations) several hours (at least up to 72 hours) at current intensities between 10-5A and 10-8A. Improvement of the current stability has been observed after performing long-time Joule heating conditioning to completely remove possible adsorbates on the nanotubes.
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Submitted 29 February, 2008;
originally announced February 2008.
