Showing 1–15 of 15 results for author: Idzuchi, H

Enhanced ferromagnetism in artificially stretched lattice in quasi two-dimensional Cr2Ge2Te6

Authors: Hiroshi Idzuchi, Andres E Llacsahuanga Allcca, Anh Khoa Augustin Lu, Mitsuhiro Saito, Michel Houssa, Ruishen Meng, Kazutoshi Inoue, Xing-Chen Pan, Katsumi Tanigaki, Yuichi Ikuhara, Takeshi Nakanishi, Yong P Chen

Abstract: In the fundamental understanding of magnetic interactions between atoms in solids, the crystal lattice is one of the key parameters. As the effective tool for controlling the lattice using tensile stress is limited, there are only few demonstrations of the control in magnetic properties with expanding the lattice structure. Here, we observe that the Curie temperature (Tc) of quasi two-dimensional… ▽ More In the fundamental understanding of magnetic interactions between atoms in solids, the crystal lattice is one of the key parameters. As the effective tool for controlling the lattice using tensile stress is limited, there are only few demonstrations of the control in magnetic properties with expanding the lattice structure. Here, we observe that the Curie temperature (Tc) of quasi two-dimensional Cr2Ge2Te6 with NiO overlayer doubles from ~60 K to ~120 K, describe a clear correlation of magnetic properties with lattice expansion, which is characterized by several probes and computational approaches, and address on the mechanisms leading to the increase in Tc via the change in exchange interactions. △ Less

Submitted 15 June, 2023; originally announced June 2023.

Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy

Authors: H. Idzuchi, M. Kimata, S. Okamoto, P. Laurell, N. Mohanta, M. Cothrine, S. E. Nagler, D. Mandrus, A. Banerjee, Y. P. Chen

Abstract: Alpha-phase (a-) RuCl_3 has emerged as a prime candidate for a quantum spin liquid (QSL) that promises exotic quasiparticles relevant for fault-tolerant quantum computation. Here, we report spin sensitive transport measurements to probe spin correlation in a-RuCl_3 using a proximal spin Hall metal platinum (Pt). Both transverse and longitudinal resistivities exhibit oscillations as function of the… ▽ More Alpha-phase (a-) RuCl_3 has emerged as a prime candidate for a quantum spin liquid (QSL) that promises exotic quasiparticles relevant for fault-tolerant quantum computation. Here, we report spin sensitive transport measurements to probe spin correlation in a-RuCl_3 using a proximal spin Hall metal platinum (Pt). Both transverse and longitudinal resistivities exhibit oscillations as function of the angle between an in-plane magnetic field and the current, akin to previously measured spin Hall magnetoresistance (SMR) in antiferromagnet/Pt heterostructures. The oscillations are observed from 1.5 T to 18 T, both within and beyond the magnetic field range where the antiferromagnetic order and QSL state are reported in a-RuCl_3. The SMR oscillations show that spins in a-RuCl3 are largely locked to an in-plane quantization axis transverse to the magnetic field, constituting a continuous-symmetry-broken state that does not necessarily represent a long-range order. This robust anisotropy of spin axis uncovers critical energy scales connected with reported QSL signatures in a-RuCl_3. Simulations suggest a predominantly antiferromagnetic correlation to moderately high magnetic-fields, that may support the SMR oscillations. The coupling of the spin states within a-RuCl_3 and Pt demonstrated in our experiment opens a transport route to exploring exotic spin phases and device functionalities of QSL materials. △ Less

Submitted 6 April, 2022; originally announced April 2022.

Van der Waals Heterostructure Magnetic Josephson Junction

Authors: H. Idzuchi, F. Pientka, K. -F. Huang, K. Harada, Ö. Gül, Y. J. Shin, L. T. Nguyen, N. H. Jo, D. Shindo, R. J. Cava, P. C. Canfield, P. Kim

Abstract: When two superconductors are connected across a ferromagnet, the spin configuration of the transferred Cooper pairs can be modulated due to magnetic exchange interaction. The resulting supercurrent can reverse its sign across the Josephson junction (JJ) [1-4]. Here we demonstrate Josephson phase modulation in van der Waals heterostructures when Cooper pairs from superconducting NbSe$_2$ tunnel thr… ▽ More When two superconductors are connected across a ferromagnet, the spin configuration of the transferred Cooper pairs can be modulated due to magnetic exchange interaction. The resulting supercurrent can reverse its sign across the Josephson junction (JJ) [1-4]. Here we demonstrate Josephson phase modulation in van der Waals heterostructures when Cooper pairs from superconducting NbSe$_2$ tunnel through atomically thin magnetic insulator (MI) Cr$_2$Ge$_2$Te$_6$. Employing a superconducting quantum interference device based on MI JJs, we probe a doubly degenerate non-trivial JJ phase ($φ$) originating from the magnetic barrier. This $φ$-phase JJ is formed by momentum conserving tunneling of Ising Cooper pairs [5] across magnetic domains in the Cr$_2$Ge$_2$Te$_6$ barrier. The doubly degenerate ground states in MI JJs provide a two-level quantum system that can be utilized as a new disipationless component for superconducting quantum devices, including phase batteries [6], memories [7,8], and quantum Ratchets [9,10]. △ Less

Submitted 29 December, 2020; originally announced December 2020.

Spin injection characteristics of Py/graphene/Pt by gigahertz and terahertz magnetization dynamics driven by femtosecond laser pulse

Authors: H. Idzuchi, S. Iihama, M. Shimura, A. Kumatani, S. Mizukami, Y. P. Chen

Abstract: Spin transport characteristics of graphene has been extensively studied so far. The spin transport along c-axis is however reported by rather limited number of papers. We have studied spin transport characteristics through graphene along c-axis with permalloy(Py)/graphene(Gr)/Pt by gigahertz (GHz) and terahertz (THz) magnetization dynamics driven by femtosecond laser pulses. The relatively simple… ▽ More Spin transport characteristics of graphene has been extensively studied so far. The spin transport along c-axis is however reported by rather limited number of papers. We have studied spin transport characteristics through graphene along c-axis with permalloy(Py)/graphene(Gr)/Pt by gigahertz (GHz) and terahertz (THz) magnetization dynamics driven by femtosecond laser pulses. The relatively simple sample structure does not require electrodes on the sample. The graphene layer was prepared by chemical vapor deposition and transferred on Pt film. The quality of graphene layer was characterized by Raman microscopy. Time resolved magneto-optical Kerr effect is used to characterize gigahertz magnetization dynamics. Magnetization precession is clearly observed both for Pt/Py and Pt/Gr/Py. The Gilbert dam** constant of Pt/Py was 0.015, indicates spin pum** effect from Py to Pt. The Gilbert dam** constant of Pt/Gr/Py is found to be 0.011, indicates spin injection is blocked by graphene layer. We have also performed the measurement of THz emission for Pt/Py and Pt/Gr/Py. While the THz emission is clearly observed for Pt/Py, a strong reduction of THz emission is observed for Pt/Gr/Py. With these two different experiments, and highly anisotropic resistivity of graphite, we conclude that the vertical spin transport is strongly suppressed by the graphene layer. △ Less

Submitted 15 October, 2020; originally announced October 2020.

Comments: Submitted to AIP adv (MMM)

Journal ref: AIP Advances 11, 015321 (2021)

Strongly adhesive dry transfer technique for van der Waals heterostructure

Authors: Suhan Son, Young Jae Shin, Kaixuan Zhang, Jeacheol Shin, Sungmin Lee, Hiroshi Idzuchi, Matthew J. Coak, Hwangsun Kim, Jangwon Kim, Jae Hoon Kim, Miyoung Kim, Dohun Kim, Philip Kim, Je-Geun Park

Abstract: That one can stack van der Waals materials with atomically sharp interfaces has provided a new material platform of constructing heterostructures. The technical challenge of mechanical stacking is picking up the exfoliated atomically thin materials after mechanical exfoliation without chemical and mechanical degradation. Chemically inert hexagonal boron nitride (hBN) has been widely used for encap… ▽ More That one can stack van der Waals materials with atomically sharp interfaces has provided a new material platform of constructing heterostructures. The technical challenge of mechanical stacking is picking up the exfoliated atomically thin materials after mechanical exfoliation without chemical and mechanical degradation. Chemically inert hexagonal boron nitride (hBN) has been widely used for encapsulating and picking up vdW materials. However, due to the relatively weak adhesion of hBN, assembling vdW heterostructures based on hBN has been limited. We report a new dry transfer technique. We used two vdW semiconductors (ZnPS3 and CrPS4) to pick up and encapsulate layers for vdW heterostructures, which otherwise are known to be hard to fabricate. By combining with optimized polycaprolactone (PCL) providing strong adhesion, we demonstrated various vertical heterostructure devices, including quasi-2D superconducting NbSe2 Josephson junctions with atomically clean interface. The versatility of the PCL-based vdW stacking method provides a new route for assembling complex 2D vdW materials without interfacial degradation. △ Less

Submitted 15 October, 2020; v1 submitted 29 June, 2020; originally announced June 2020.

Journal ref: 2D Mater. 7, 041005 (2020)

Increased Curie temperature and enhanced perpendicular magneto anisotropy of Cr2Ge2Te6/NiO heterostructure

Authors: H. Idzuchi, A. E. Llacsahuanga Allcca, X. C. Pan, K. Tanigaki, Y. P. Chen

Abstract: Magnetism in two-dimensional van der Waals materials has received significant attention recently. The Curie temperature reported for those materials, however, has been so far remained relatively low. Here, we measure magneto-optical Kerr effects (MOKE) under perpendicular magnetic field for van der Waals ferromagnet Cr2Ge2Te6 as well as its heterostructure with antiferromagnetic insulator NiO. We… ▽ More Magnetism in two-dimensional van der Waals materials has received significant attention recently. The Curie temperature reported for those materials, however, has been so far remained relatively low. Here, we measure magneto-optical Kerr effects (MOKE) under perpendicular magnetic field for van der Waals ferromagnet Cr2Ge2Te6 as well as its heterostructure with antiferromagnetic insulator NiO. We observe a notable increase in both Curie temperature and magnetic perpendicular anisotropy in Cr2Ge2Te6/NiO heterostructures compared to those in Cr2Ge2Te6. Measurements on the same exfoliated Cr2Ge2Te6 flake (on a SiO2/Si substrate) before and after depositing NiO show that the hysteresis loop can change into a square shape with larger coercive field for Cr2Ge2Te6/NiO. The maximum Curie temperature (TC) observed for Cr2Ge2Te6/NiO reaches ~120 K, is nearly twice the maximum TC ~ 60 K reported for Cr2Ge2Te6 alone. Both enhanced perpendicular anisotropy and increased Curie temperature are observed for Cr2Ge2Te6 flakes with a variety of thicknesses ranging from ~5 nm to ~200 nm. The results indicate that magnetic properties of two-dimensional van der Waals magnets can be engineered and controlled by using the heterostructure interface with other materials. △ Less

Submitted 6 December, 2019; originally announced December 2019.

Journal ref: Appl. Phys. Lett. 115, 232403 (2019)

Tunneling Devices with Perpendicular Magnetic Anisotropy Electrodes on Atomically Thin van der Waals Heterostructures

Authors: H. Idzuchi, T. Taniguchi, K. Watanabe, P. Kim

Abstract: We report the fabrication of perpendicular ferromagnetic electrodes for tunneling devices consist of van der Waals heterostructure. We found MgO/Co/Pt films on Hexagonal BN shows perpendicular magnetic anisotropy (PMA) with the easy axis perpendicular to the substrate. Vacuum annealing enhances the perpendicular anisotropy. The easy axis along the perpendicular direction persists up to room temper… ▽ More We report the fabrication of perpendicular ferromagnetic electrodes for tunneling devices consist of van der Waals heterostructure. We found MgO/Co/Pt films on Hexagonal BN shows perpendicular magnetic anisotropy (PMA) with the easy axis perpendicular to the substrate. Vacuum annealing enhances the perpendicular anisotropy. The easy axis along the perpendicular direction persists up to room temperature with the Pt layer thickness ranges from 1.5 to 5 nm. We employed the PMA electrodes to construct tunneling devices on graphene and monolayer WSe2, where spin injection characteristics and field effect transistor behavior were demonstrated without strong Schottky barrier formation. △ Less

Submitted 29 October, 2017; originally announced October 2017.

Spin relaxation characteristics in Ag nanowire covered with various oxides

Authors: Shutaro Karube, Hiroshi Idzuchi, Kouta Kondou, Yasuhiro Fukuma, YoshiChika Otani

Abstract: We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10 K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag and Hf. Surprisingly the Bi2O3 c… ▽ More We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10 K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag and Hf. Surprisingly the Bi2O3 cap** was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi2O3 interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity and surface scatterings. The Ag/Bi2O3 interface may provide functionality as a spin to charge interconversion layer. △ Less

Submitted 6 September, 2015; v1 submitted 24 July, 2015; originally announced July 2015.

Comments: 11pages, 1table, and 3figures

Journal ref: Appl. Phys. Lett. 107, 122406 (2015)

Revisiting the measurement of the spin relaxation time in graphene-based devices

Authors: H. Idzuchi, A. Fert, Y. Otani

Abstract: A long spin relaxation time (tausf) is the key for the applications of graphene to spintronics but the experimental values of tausf have been generally much shorter than expected. We show that the usual determination by the Hanle method underestimates tausf if proper account of the spin absorption by contacts is lacking. By revisiting series of experimental results, we find that the corrected taus… ▽ More A long spin relaxation time (tausf) is the key for the applications of graphene to spintronics but the experimental values of tausf have been generally much shorter than expected. We show that the usual determination by the Hanle method underestimates tausf if proper account of the spin absorption by contacts is lacking. By revisiting series of experimental results, we find that the corrected tausf are longer and less dispersed, which leads to a more unified picture of tausf derived from experiments. We also discuss how the correction depends on the parameters of the graphene and contacts. △ Less

Submitted 11 November, 2014; originally announced November 2014.

Journal ref: Phys. Rev. B 91, 241407(R), 2015

Effect of anisotropic spin absorption on the Hanle effect in lateral spin valves

Authors: H. Idzuchi, Y. Fukuma, S. Takahashi, S. Maekawa, Y. Otani

Abstract: We have succeeded in fully describing dynamic properties of spin current including the different spin absorption mechanism for longitudinal and transverse spins in lateral spin valves, which enables to elucidate intrinsic spin transport and relaxation mechanism in the nonmagnet. The deduced spin lifetimes are found independent of the contact type. From the transit-time distribution of spin current… ▽ More We have succeeded in fully describing dynamic properties of spin current including the different spin absorption mechanism for longitudinal and transverse spins in lateral spin valves, which enables to elucidate intrinsic spin transport and relaxation mechanism in the nonmagnet. The deduced spin lifetimes are found independent of the contact type. From the transit-time distribution of spin current extracted from the Fourier transform in Hanle measurement data, the velocity of the spin current in Ag with Py/Ag Ohmic contact turns out much faster than that expected from the widely used model. △ Less

Submitted 28 December, 2013; originally announced December 2013.

Comments: 21 pages, 3 figures, 9 pages (supplementary information)

Journal ref: Phys. Rev. B 89, 081308(R) (2014)

5d transition metal oxide IrO2 as a material for spin current detection

Authors: Kohei Fujiwara, Yasuhiro Fukuma, Jobu Matsuno, Hiroshi Idzuchi, Yasuhiro Niimi, YoshiChika Otani, Hidenori Takagi

Abstract: Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an electric detection of spin current is essential. Inverse spin Hall effect converts a spin current into an electric voltage through spin-orbit coupling. Noble meta… ▽ More Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an electric detection of spin current is essential. Inverse spin Hall effect converts a spin current into an electric voltage through spin-orbit coupling. Noble metals such as Pt and Pd, and also Cu-based alloys, owing to the large direct spin Hall effect, have been regarded as potential materials for a spin-current injector. Those materials, however, are not promising as a spin-current detector based on inverse spin Hall effect. Their spin Hall resistivity rho_SH, representing the performance as a detector, is not large enough mainly due to their low charge resistivity. Here we demonstrate that heavy transition metal oxides can overcome such limitations inherent to metal-based spintronics materials. A binary 5d transition metal oxide IrO2, owing to its large resistivity as well as a large spin-orbit coupling associated with 5d character of conduction electrons, was found to show a gigantic rho_SH ~ 38 microohm cm at room temperature, one order of magnitude larger than those of noble metals and Cu-based alloys and even comparable to those of atomic layer thin film of W and Ta. △ Less

Submitted 8 July, 2013; originally announced July 2013.

Journal ref: Nature Communications 4, 2893 (2013)

Experimental Verification of Comparability between Spin-Orbit and Spin-Diffusion Lengths

Authors: Yasuhiro Niimi, Dahai Wei, Hiroshi Idzuchi, Taro Wakamura, Takeo Kato, YoshiChika Otani

Abstract: We experimentally confirmed that the spin-orbit lengths of noble metals obtained from weak anti-localization measurements are comparable to the spin diffusion lengths determined from lateral spin valve ones. Even for metals with strong spin-orbit interactions such as Pt, we verified that the two methods gave comparable values which were much larger than those obtained from recent spin torque ferro… ▽ More We experimentally confirmed that the spin-orbit lengths of noble metals obtained from weak anti-localization measurements are comparable to the spin diffusion lengths determined from lateral spin valve ones. Even for metals with strong spin-orbit interactions such as Pt, we verified that the two methods gave comparable values which were much larger than those obtained from recent spin torque ferromagnetic resonance measurements. To give a further evidence for the comparability between the two length scales, we measured the disorder dependence of the spin-orbit length of copper by changing the thickness of the wire. The obtained spin-orbit length nicely follows a linear law as a function of the diffusion coefficient, clearly indicating that the Elliott-Yafet mechanism is dominant as in the case of the spin diffusion length. △ Less

Submitted 6 January, 2013; v1 submitted 6 November, 2012; originally announced November 2012.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 110, 016805 (2013)

Towards coherent spin precession in pure-spin current

Authors: Hiroshi Idzuchi, Yasuhiro Fukuma, YoshiChika Otani

Abstract: Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing frequent collisions and these events lead to a broad distribution of the dwell time in a transport channel between the injector and the detector. Here we show t… ▽ More Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing frequent collisions and these events lead to a broad distribution of the dwell time in a transport channel between the injector and the detector. Here we show the lateral spin-valves with dual injectors enable us to detect a genuine in-plane precession signal from the Hanle effect, demonstrating the phase coherency in the in-plane precession is improved with an increase of the channel length. The coherency in the spin precession shows a universal behavior as a function of the normalized separation between the injector and the detector in material-independent fashion for metals and semiconductors including graphene. △ Less

Submitted 29 June, 2012; originally announced June 2012.

Spin relaxation mechanism in Silver nanowires covered with MgO protection layer

Authors: H. Idzuchi, Y. Fukuma, L. Wang, Y. Otani

Abstract: Spin-flip mechanism in Ag nanowires with MgO surface protection layers has been investigated by means of nonlocal spin valve measurements using Permalloy/Ag lateral spin valves. The spin flip events mediated by surface scattering are effectively suppressed by the MgO cap** layer. The spin relaxation process was found to be well described in the framework of Elliott-Yafet mechanism and then the p… ▽ More Spin-flip mechanism in Ag nanowires with MgO surface protection layers has been investigated by means of nonlocal spin valve measurements using Permalloy/Ag lateral spin valves. The spin flip events mediated by surface scattering are effectively suppressed by the MgO cap** layer. The spin relaxation process was found to be well described in the framework of Elliott-Yafet mechanism and then the probabilities of spin-filp scattering for phonon or impurity mediated momentum scattering is precisely determined in the nanowires. The temperature dependent spin-lattice relaxation follows the Bloch-Grüneisen theory and falls on to a universal curve for the monovalent metals as in the Monod and Beuneu scaling determined from the conduction electron spin resonance data for bulk. △ Less

Submitted 29 January, 2012; v1 submitted 19 April, 2011; originally announced April 2011.

Comments: 18 pages, 3figures

Journal ref: Appl. Phys. Lett. 101, 022415 (2012)

Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves

Authors: Y. Fukuma, L. Wang, H. Idzuchi, S. Takahashi, S. Maekawa, Y. Otani

Abstract: The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin current flowing into an additional ferromagnetic wire, is typically of the order of 1 μV. Here we show that lateral spin valves with low resistive NiFe/MgO/Ag ju… ▽ More The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin current flowing into an additional ferromagnetic wire, is typically of the order of 1 μV. Here we show that lateral spin valves with low resistive NiFe/MgO/Ag junctions enable the efficient spin injection with high applied current density, which leads to the spin valve voltage increased hundredfold. Hanle effect measurements demonstrate a long-distance collective 2-pi spin precession along a 6 μm long Ag wire. These results suggest a route to faster and manipulable spin transport for the development of pure spin current based memory, logic and sensing devices. △ Less

Submitted 9 May, 2011; v1 submitted 4 March, 2011; originally announced March 2011.

Comments: 23 pages, 4 figures

Journal ref: Nature Materials, vol. 10, 527 (2011)