Showing 1–2 of 2 results for author: Iacovella, F
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Band bending inversion in Bi$_2$Se$_3$ nanostructures
Authors:
Louis Veyrat,
Fabrice Iacovella,
Joseph Dufouleur,
Christian Nowka,
Hannes Funke,
Ming Yang,
Walter Escoffier,
Michel Goiran,
Bernd Buechner,
Silke Hampel,
Romain Giraud
Abstract:
Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to $6\times10^{17}\text{cm}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensiona…
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Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to $6\times10^{17}\text{cm}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density, as a result of a competition between bulk and interface do**. These results highlight the need to control electrical do** both in the bulk and at interfaces in order to study only topological surface states.
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Submitted 8 August, 2015;
originally announced August 2015.
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Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots
Authors:
M. F. Gonzalez-Zalba,
J. Galibert,
F. Iacovella,
D. Williams,
T. Ferrus
Abstract:
We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length becomes comparable to the effective Bohr radius of ph…
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We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length becomes comparable to the effective Bohr radius of phosphorous in silicon, a strong decrease in conductance is demonstrated. Data in the high and low electric field bias regimes are then compared to show that close to the Coulomb blockade edge magnetically-induced quenching to single donors in the quantum dot is achieved at about 40 T.
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Submitted 18 November, 2013;
originally announced November 2013.
