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FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
Authors:
J. Casamento,
K. Nomoto,
T. S. Nguyen,
H. Lee,
C. Savant,
L. Li,
A. Hickman,
T. Maeda,
J. Encomendero,
V. Gund,
A. Lal,
J. C. M. Hwang,
H. G. Xing,
D. Jena
Abstract:
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high…
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We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The FerroHEMTs exhibit hysteretic Id Vgs loops with subthreshold slopes below the Boltzmann limit. A control AlN barrier HEMT exhibits neither hysteretic, nor sub Boltzmann behavior. While these results introduce the first epitaxial high K and ferroelectric barrier technology to RF and mm wave electronics, they are also of interest as a new material platform for combining memory and logic functionalities in digital electronics.
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Submitted 27 February, 2023;
originally announced February 2023.
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A translation of Maurice Philippson's "Principles of the Electrical Resistance of Living Tissue"
Authors:
James C. M. Hwang,
Olivia Peytral-Rieu
Abstract:
The impedance of one cubic centimeter of living tissues of potato and guinea pig were measured from 500 Hz to 3 MHz. In general, the magnitude of the impedance was found to monotonically decrease with increasing frequency. This implies that the membrane of each cell in the tissue acts like a capacitor, which is in parallel with a membrane resistance. The membrane resistance and capacitance togethe…
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The impedance of one cubic centimeter of living tissues of potato and guinea pig were measured from 500 Hz to 3 MHz. In general, the magnitude of the impedance was found to monotonically decrease with increasing frequency. This implies that the membrane of each cell in the tissue acts like a capacitor, which is in parallel with a membrane resistance. The membrane resistance and capacitance together are in series with a protoplasm resistance. Experimentally, it was observed that after the guinea pig died, the membrane resistance of its muscle decreased from 1.49 to 0.79 kilo-ohm while the protoplasm resistance remained around 0.11 kilo-ohm. By contrast, when the potato started to germinate, the protoplasm resistance decreased from 0.25 to 0.10 kilo-ohm, while its membrane resistance remained around 4 kilo-ohms.
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Submitted 28 October, 2020;
originally announced May 2021.
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Inverted Scanning Microwave Microscope for In Vitro Imaging and Characterization of Biological Cells
Authors:
Marco Farina,
Xin **,
Gianluca Fabi,
Eleonora Pavoni,
Andrea di Donato,
Davide Mencarelli,
Antonio Morini,
Francesco Piacenza,
Richard Al Hadi,
Yan Zhao,
Tiziana Pietrangelo,
Xuanhong Cheng,
James C. M. Hwang
Abstract:
This paper presents for the first time an innovative instrument called an inverted scanning microwave microscope (iSMM), which is capable of noninvasive and label-free imaging and characterization of intracellular structures of a live cell on the nanometer scale. In particular, the iSMM is sensitive to not only surface structures, but also ectromagnetic properties up to one micrometer below the su…
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This paper presents for the first time an innovative instrument called an inverted scanning microwave microscope (iSMM), which is capable of noninvasive and label-free imaging and characterization of intracellular structures of a live cell on the nanometer scale. In particular, the iSMM is sensitive to not only surface structures, but also ectromagnetic properties up to one micrometer below the surface. Conveniently, the iSMM can be constructed through straightforward conversion of any scanning probe microscope, such as the atomic force microscope or the scanning tunneling microscope, with a simple metal probe to outperform traditional SMM in terms of ruggedness, and width, sensitivity and dynamic range. By contrast, the application of the traditional SMM to date has been limited to mainly surface physics and semiconductor technology, because the traditional SMM requires a fragile and expensive probe and is incompatible with saline solution or live biological cells.
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Submitted 13 March, 2019; v1 submitted 11 March, 2019;
originally announced March 2019.
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Large-Scale Fabrication of RF MOSFETs on Liquid-Exfoliated MoS2
Authors:
Kuanchen Xiong,
Lei Li,
Asher Madjar,
James C. M. Hwang,
Zhaoyang Lin,
Yu Huang,
Xiangfeng Duan,
Alexander Goritz,
Matthias Wietstruck,
Mehmet Kaynak
Abstract:
For the first time, thousands of RF MOSFETs were batch-fabricated on liquid-exfoliated MoS2 below 300 °C with nearly 100% yield. The large-scale fabrication with high yield allowed the average performance instead of the best performance to be reported. The DC performance of these devices were typical, but the RF performance, enabled by buried gates and on the order of 100 MHz, was reported for the…
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For the first time, thousands of RF MOSFETs were batch-fabricated on liquid-exfoliated MoS2 below 300 °C with nearly 100% yield. The large-scale fabrication with high yield allowed the average performance instead of the best performance to be reported. The DC performance of these devices were typical, but the RF performance, enabled by buried gates and on the order of 100 MHz, was reported for the first time for liquid-exfoliated MoS2. To resolve the dilemma of thin vs. thick films, gate recess was used on 20-nm thick films to improve the gate control while kee** the contact resistance lower than that on 10-nm films. These innovations may enable thin-film transistors to operate in the microwave range.
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Submitted 27 March, 2018;
originally announced March 2018.
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Rugged HBT Class-C Power Amplifiers with Base-Emitter Clam**
Authors:
Xi Luo,
Subrata Halder,
James C. M. Hwang
Abstract:
The ruggedness of HBT Class-C power amplifiers was improved by adding an anti-parallel diode to the amplifier input to limit the negative swing of the base-emitter voltage. The improved amplifier could withstand 3:1 instead of 2:1 mismatch in CW operation, and 2.5:1 instead of 1.5:1 mismatch in pulse operation. In contrast to other approaches with emitter ballast, active feedback, or electrostatic…
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The ruggedness of HBT Class-C power amplifiers was improved by adding an anti-parallel diode to the amplifier input to limit the negative swing of the base-emitter voltage. The improved amplifier could withstand 3:1 instead of 2:1 mismatch in CW operation, and 2.5:1 instead of 1.5:1 mismatch in pulse operation. In contrast to other approaches with emitter ballast, active feedback, or electrostatic discharge protection circuits, the present approach is simple to implement and has negligible impact on overall amplifier output power, gain or efficiency.
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Submitted 27 July, 2017;
originally announced August 2017.
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Scaling and High-Frequency Performance of AlN/GaN HEMTs
Authors:
Xi Luo,
Subrata Halder,
Walter R. Curtice,
James C. M. Hwang,
Kelson D. Chabak,
Dennis E. Walker, Jr.,
Amir M. Dabiran
Abstract:
Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 μm width. Consistent with the literature, current-gain cut-off frequency and maximum frequency of oscillation were found to increase with inverse gate length and independent of gate width. For the first time, output power and efficiency were reported at the high end of Xband, and were c…
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Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 μm width. Consistent with the literature, current-gain cut-off frequency and maximum frequency of oscillation were found to increase with inverse gate length and independent of gate width. For the first time, output power and efficiency were reported at the high end of Xband, and were comparable to the best reported at 2 GHz and insensitive to gate length or width. These results suggest that the AlN/GaN HEMTs can be further scaled for even higher frequency and higher power performance.
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Submitted 27 July, 2017;
originally announced July 2017.
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Scanning Microwave Microscopy of Aluminum CMOS Interconnect Lines Buried in Oxide and Water
Authors:
Xin **,
Kuanchen Xiong,
Roderick Marstell,
Nicholas C. Strandwitz,
James C. M. Hwang,
Marco Farina,
Alexander Göritz,
Matthias Wietstruck,
Mehmet Kaynak
Abstract:
Using a scanning microwave microscope, we imaged in water aluminum interconnect lines buried in aluminum and silicon oxides fabricated through a state-of-the-art 0.13 um SiGe BiCMOS process. The results were compared with that obtained by using atomic force microscopy both in air and water. It was found the images in water was degraded by only approximately 60% from that in air.
Using a scanning microwave microscope, we imaged in water aluminum interconnect lines buried in aluminum and silicon oxides fabricated through a state-of-the-art 0.13 um SiGe BiCMOS process. The results were compared with that obtained by using atomic force microscopy both in air and water. It was found the images in water was degraded by only approximately 60% from that in air.
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Submitted 22 June, 2017;
originally announced June 2017.
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Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors
Authors:
Xi Luo,
Kuanchen Xiong,
James C. M. Hwang,
Yuchen Du,
PeiDe Ye
Abstract:
Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance associated mainly with the relatively large probe pads. The gate lag and drain lag of the transistor was found to be on the order of 1 us or less, which…
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Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance associated mainly with the relatively large probe pads. The gate lag and drain lag of the transistor was found to be on the order of 1 us or less, which is consistent with the lack of hysteresis, carrier freeze-out or persistent photoconductivity in DC characteristics. These results confirm that the phosphorene MOSFET can be a viable microwave transistor for both small-signal and large-signal applications.
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Submitted 16 March, 2016;
originally announced March 2016.
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Phosphorene FETs: Promising transistors based on a few layers of phosphorus atoms
Authors:
Kuanchen Xiong,
Xi Luo,
James C. M. Hwang
Abstract:
This paper reviews the emergence and progress of phosphorene FETs, all within about a year. In such a short time, back-gated FETs evolved into top-gated FETs, gate length was reduced to the sub-micron range, passivation by high-k dielectrics or hexagonal boron nitride was demonstrated with temporal, thermal and mechanical stability, ohmic contact was achieved down to cryogenic temperatures, and cu…
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This paper reviews the emergence and progress of phosphorene FETs, all within about a year. In such a short time, back-gated FETs evolved into top-gated FETs, gate length was reduced to the sub-micron range, passivation by high-k dielectrics or hexagonal boron nitride was demonstrated with temporal, thermal and mechanical stability, ohmic contact was achieved down to cryogenic temperatures, and cutoff frequencies was pushed above 10 GHz. These and other attractive characteristics of phosphorene promise the phosphorene FET to be a viable candidate for current-generation flexible electronics as well as future-generation ultra-thin-body low-power-consumption high-speed and high-frequency transistors.
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Submitted 2 May, 2015;
originally announced May 2015.
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Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs
Authors:
Xi Luo,
Yaghoob Rahbarihagh,
James C. M. Hwang,
Han Liu,
Yuchen Du,
Peide D. Ye
Abstract:
This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosphorene MOSFET was stable in atmosphere for at least 100 h. With annealing at 200°C in dry nitrogen for 1 h, its drain current increased by an order of magnitude to approximately 100 mA/mm, which could be attributed to the…
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This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosphorene MOSFET was stable in atmosphere for at least 100 h. With annealing at 200°C in dry nitrogen for 1 h, its drain current increased by an order of magnitude to approximately 100 mA/mm, which could be attributed to the reduction of trapped charge in Al2O3 and/or Schottky barrier at the source and drain contacts. Thereafter, the drain current was stable between -50°C and 150°C up to at least 1000 h. These promising results suggest that environmental protection of phosphorene should not be a major concern, and passivation of phosphorene should focus on its effect on electronic control and transport as in conventional silicon MOSFETs. With cutoff frequencies approaching the gigahertz range, the present phosphorene MOSFET, although far from being optimized, can meet the frequency and stability requirements of most flexible electronics for which phosphorene is intrinsically advantageous due to its corrugated lattice structure.
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Submitted 3 October, 2014;
originally announced October 2014.
