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Limit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
Considering scattering by unintentional background charged impurities and by charged dopants in the modulation do** layer as well as by GaAs acoustic phonons, we theoretically consider the practical intrinsic (phonons) and extrinsic (background and dopants) limits to carrier mobility in modulation doped AlGaAs-GaAs 2D semiconductor structures. We find that reducing background impurity density…
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Considering scattering by unintentional background charged impurities and by charged dopants in the modulation do** layer as well as by GaAs acoustic phonons, we theoretically consider the practical intrinsic (phonons) and extrinsic (background and dopants) limits to carrier mobility in modulation doped AlGaAs-GaAs 2D semiconductor structures. We find that reducing background impurity density to $10^{12}$ cm$^{-3}$ along with a modulation do** separation of 1000 Åor above will achieve a mobility of $100 \times 10^6$ cm$^2$/Vs at a carrier density of $3\times 10^{11}$ cm$^{-2}$ for T=1K. At T=4 (10)K, however, the hard limit to the 2D mobility would be set by acoustic phonon scattering with the maximum intrinsic mobility being no higher than 22 $(5) \times 10^6$ cm$^2$/Vs. Detailed numerical results are presented as a function of carrier density, modulation do** distance, and temperature to provide a quantitative guide to experimental efforts for achieving ultra-high 2D mobilities.
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Submitted 29 April, 2008;
originally announced April 2008.
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Transport and drag in undoped electron-hole bilayers
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobil…
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We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilyers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility.
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Submitted 21 April, 2008;
originally announced April 2008.
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Screening, Kohn anomaly, Friedel oscillation, and RKKY interaction in bilayer graphene
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
We calculate the screening function in bilayer graphene (BLG) both in the intrinsic (undoped) and the extrinsic (doped) regime within random phase approximation, comparing our results with the corresponding single layer graphene (SLG) and the regular two dimensional electron gas (2DEG). We find that the Kohn anomaly is strongly enhanced in BLG. We also discuss the Friedel oscillation and the RKK…
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We calculate the screening function in bilayer graphene (BLG) both in the intrinsic (undoped) and the extrinsic (doped) regime within random phase approximation, comparing our results with the corresponding single layer graphene (SLG) and the regular two dimensional electron gas (2DEG). We find that the Kohn anomaly is strongly enhanced in BLG. We also discuss the Friedel oscillation and the RKKY interaction, which are associated with the non-analytic behavior of the screening function at $q=2k_F$. We find that the Kohn anomaly, the Friedel oscillation, and the RKKY interaction are all qualitatively different in the BLG compared with the SLG and the 2DEG.
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Submitted 14 April, 2008;
originally announced April 2008.
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Single particle relaxation time versus transport scattering time in a 2D graphene layer
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
We theoretically calculate and compare the single-particle relaxation time ($τ_s$) defining quantum level broadening and the transport scattering time ($τ_t$) defining Drude conductivity in 2D graphene layers in the presence of screened charged impurities scattering and short-range defect scattering. We find that the ratio $τ_t/τ_s$ increases strongly with increasing $k_F z_i$ and $κ$ where…
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We theoretically calculate and compare the single-particle relaxation time ($τ_s$) defining quantum level broadening and the transport scattering time ($τ_t$) defining Drude conductivity in 2D graphene layers in the presence of screened charged impurities scattering and short-range defect scattering. We find that the ratio $τ_t/τ_s$ increases strongly with increasing $k_F z_i$ and $κ$ where $k_F$, $z_i$, and $κ$ are respectively the Fermi wave vector, the separation of the substrate charged impurities from the graphene layer, and the background lattice dielectric constant. A critical quantitative comparison of the $τ_t/τ_s$ results for graphene with the corresponding modulation-doped semiconductor structures is provided, showing significant differences between these two 2D carrier systems.
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Submitted 30 January, 2008;
originally announced January 2008.
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Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find a temperature dependent phonon-limited resistivity $ρ_{ph}(T)$ to be linear in temperature for $T\agt 50 K$ with the room temperature intrinsic mobility reac…
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We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find a temperature dependent phonon-limited resistivity $ρ_{ph}(T)$ to be linear in temperature for $T\agt 50 K$ with the room temperature intrinsic mobility reaching values above $10^5$ cm$^2/Vs$. We comment on the low-temperature Bloch-Grüneisen behavior where $ρ_{ph}(T) \sim T^4$ for unscreened electron-phonon coupling.
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Submitted 31 January, 2008; v1 submitted 6 November, 2007;
originally announced November 2007.
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Transport and percolation in a low-density high-mobility two-dimensional hole system
Authors:
M. J. Manfra,
E. H. Hwang,
S. Das Sarma,
L. N. Pfeiffer,
K. W. West,
A. M. Sergent
Abstract:
We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime ($p\agt 4 \times 10^{9}$ cm$^{-2}$), the nonmonotonic temperature dependence ($\sim 50-300$ mK) of the resistivity is consistent with temperature dependent screening of residual impur…
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We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime ($p\agt 4 \times 10^{9}$ cm$^{-2}$), the nonmonotonic temperature dependence ($\sim 50-300$ mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of $T$= 50 mK, the conductivity vs. density data indicates an inhomogeneity driven percolation-type transition to an insulating state at a critical density of $3.8\times 10^9$ cm$^{-2}$.
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Submitted 18 October, 2007;
originally announced October 2007.
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Electron-Electron Interactions in Graphene
Authors:
S. Das Sarma,
Ben Yu-Kuang Hu,
E. H. Hwang,
Wang-Kong Tse
Abstract:
We discuss the validity (or not) of the ring-diagram approximation (i.e. RPA) in the calculation of graphene self-energy in the weak-coupling ($r_s \ll 1$) limit, showing that RPA is a controlled and valid approximation for \textit{extrinsic} graphene where the Fermi level is away from the Dirac point.
We discuss the validity (or not) of the ring-diagram approximation (i.e. RPA) in the calculation of graphene self-energy in the weak-coupling ($r_s \ll 1$) limit, showing that RPA is a controlled and valid approximation for \textit{extrinsic} graphene where the Fermi level is away from the Dirac point.
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Submitted 29 August, 2007; v1 submitted 23 August, 2007;
originally announced August 2007.
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The quasiparticle spectral function in doped graphene
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
We calculate the real and imaginary electron self-energy as well as the quasiparticle spectral function in doped graphene taking into account electron-electron interaction in the leading order dynamically screened Coulomb coupling. Our theory provides the basis for calculating {\it all} one-electron properties of extrinsic graphene. Comparison with existing ARPES measurements shows broad qualita…
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We calculate the real and imaginary electron self-energy as well as the quasiparticle spectral function in doped graphene taking into account electron-electron interaction in the leading order dynamically screened Coulomb coupling. Our theory provides the basis for calculating {\it all} one-electron properties of extrinsic graphene. Comparison with existing ARPES measurements shows broad qualitative agreement between theory and experiment. We also calculate the renormalized graphene momentum distribution function, finding a typical Fermi liquid discontinuity at k_F. We also provide a critical discussion of the relevant many body approximations (e.g. RPA) for graphene.
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Submitted 9 August, 2007; v1 submitted 8 August, 2007;
originally announced August 2007.
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Scattering mechanisms and Boltzmann transport in graphene
Authors:
Shaffique Adam,
E. H. Hwang,
S. Das Sarma
Abstract:
Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as well as analytical expressions for the dependence of conductivity on the dielectric constant of the substrate. We further examine the effect of ripples on the tr…
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Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as well as analytical expressions for the dependence of conductivity on the dielectric constant of the substrate. We further examine the effect of ripples on the transport using a surface roughness model developed for semiconductor heterostructures. We find that close to the Dirac point, σ\sim n^β, where β=1,0,-2 for Coulomb, short-range and surface roughness respectively; implying that Coulomb scattering dominates over both short-range and surface roughness scattering at low density.
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Submitted 9 October, 2007; v1 submitted 2 August, 2007;
originally announced August 2007.
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Many-body exchange-correlation effects in graphene
Authors:
E. H. Hwang,
Ben Yu-Kuang Hu,
S. Das Sarma
Abstract:
We calculate, within the leading-order dynamical-screening approximation, the electron self-energy and spectral function at zero temperature for extrinsic (or gated/doped) graphene. We also calculate hot carrier inelastic scattering due to electron-electron interactions in graphene. We obtain the inelastic quasiparticle lifetimes and associated mean free paths from the calculated self-energy. Th…
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We calculate, within the leading-order dynamical-screening approximation, the electron self-energy and spectral function at zero temperature for extrinsic (or gated/doped) graphene. We also calculate hot carrier inelastic scattering due to electron-electron interactions in graphene. We obtain the inelastic quasiparticle lifetimes and associated mean free paths from the calculated self-energy. The linear dispersion and chiral property of graphene gives energy dependent lifetimes that are qualitatively different from those of parabolic-band semiconductors.
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Submitted 31 July, 2007;
originally announced July 2007.
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Measurement of Scattering Rate and Minimum Conductivity in Graphene
Authors:
Y. -W. Tan,
Y. Zhang,
K. Bolotin,
Y. Zhao,
S. Adam,
E. H. Hwang,
S. Das Sarma,
H. L. Stormer,
P. Kim
Abstract:
The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from $2-15\times 10^{11}$ cm$^{-2}$. In the low c…
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The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from $2-15\times 10^{11}$ cm$^{-2}$. In the low carrier density limit, the conductivity exhibits values in the range of $2-12e^2/h$, which can be related to the residual density induced by the inhomogeneous charge distribution in the samples. The shape of the conductivity curves indicates that high mobility samples contain some short range disorder whereas low mobility samples are dominated by long range scatterers.
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Submitted 12 July, 2007;
originally announced July 2007.
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A self-consistent theory for graphene transport
Authors:
Shaffique Adam,
E. H. Hwang,
Victor Galitski,
S. Das Sarma
Abstract:
We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are not universal but depend on the concentration of charged impurities $n_{\rm imp}$. For dirty samples (…
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We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are not universal but depend on the concentration of charged impurities $n_{\rm imp}$. For dirty samples ($250 \times 10^{10} {\rm cm}^{-2} < n_{\rm imp} < 400 \times 10^{10} {\rm cm}^{-2}$), the value of the minimum conductivity at low carrier density is indeed $4 e^2/h$ in agreement with early experiments, with weak dependence on impurity concentration. For cleaner samples, we predict that the minimum conductivity depends strongly on $n_{\rm imp}$, increasing to $8 e^2/h$ for $n_{\rm imp} \sim 20 \times 10^{10}{\rm cm}^{-2}$. A clear strategy to improve graphene mobility is to eliminate charged impurities or use a substrate with a larger dielectric constant.
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Submitted 9 October, 2007; v1 submitted 10 May, 2007;
originally announced May 2007.
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Density dependent exchange contribution to $\partialμ/\partial n$ in extrinsic graphene
Authors:
E. H. Hwang,
Ben Yu-Kuang Hu,
S. Das Sarma
Abstract:
We calculate $\partialμ/\partial n$ in extrinsic graphene as a function of carrier density $n$ at zero temperature by obtaining the electronic self-energy within the Hartree-Fock approximation. The exchange-driven Dirac-point logarithmic singularity in the quasiparticle velocity of intrinsic graphene disappears in the extrinsic case. The calculated renormalized $\partialμ/\partial n$ in extrinsi…
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We calculate $\partialμ/\partial n$ in extrinsic graphene as a function of carrier density $n$ at zero temperature by obtaining the electronic self-energy within the Hartree-Fock approximation. The exchange-driven Dirac-point logarithmic singularity in the quasiparticle velocity of intrinsic graphene disappears in the extrinsic case. The calculated renormalized $\partialμ/\partial n$ in extrinsic graphene has the same qualitative $n^{-\frac12}$ density dependence as the inverse bare density of states with a 20% enhancement from the corresponding bare value, a relatively weak effect compared to the corresponding parabolic-band case.
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Submitted 3 December, 2007; v1 submitted 19 March, 2007;
originally announced March 2007.
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Inelastic carrier lifetime in graphene
Authors:
E. H. Hwang,
Ben Yu-Kuang Hu,
S. Das Sarma
Abstract:
We consider hot carrier inelastic scattering due to electron--electron interactions in graphene, as functions of carrier energy and density. We calculate the imaginary part of the zero-temperature quasiparticle self-energy for doped graphene, utlizing the $G_0W$ and random phases approximations. Using the full dynamically screened Coulomb interaction, we obtain the inelastic quasiparticle lifeti…
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We consider hot carrier inelastic scattering due to electron--electron interactions in graphene, as functions of carrier energy and density. We calculate the imaginary part of the zero-temperature quasiparticle self-energy for doped graphene, utlizing the $G_0W$ and random phases approximations. Using the full dynamically screened Coulomb interaction, we obtain the inelastic quasiparticle lifetimes and associated mean free paths. The linear dispersion of graphene gives lifetime energy dependences that are qualitatively different from those of parabolic-band semiconductors. We also get good agreement with data from angle-resolved photoemission spectroscopy experiments.
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Submitted 3 December, 2007; v1 submitted 13 December, 2006;
originally announced December 2006.
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Transport in chemically doped graphene in the presence of adsorbed molecules
Authors:
E. H. Hwang,
S. Adam,
S. Das Sarma
Abstract:
Motivated by a recent experiment reporting on the possible application of graphene as sensors, we calculate transport properties of 2D graphene monolayers in the presence of adsorbed molecules. We find that the adsorbed molecules, acting as compensators that partially neutralize the random charged impurity centers in the substrate, enhance the graphene mobility without much change in the carrier…
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Motivated by a recent experiment reporting on the possible application of graphene as sensors, we calculate transport properties of 2D graphene monolayers in the presence of adsorbed molecules. We find that the adsorbed molecules, acting as compensators that partially neutralize the random charged impurity centers in the substrate, enhance the graphene mobility without much change in the carrier density. We predict that subsequent field-effect measurements should preserve this higher mobility for both electrons and holes, but with a voltage induced electron-hole asymmetry that depends on whether the adsorbed molecule was an electron or hole donor in the compensation process. We also calculate the low density magnetoresistance and find good quantitative agreement with experimental results.
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Submitted 29 October, 2007; v1 submitted 30 October, 2006;
originally announced October 2006.
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Is Graphene a Fermi Liquid?
Authors:
S. Das Sarma,
E. H. Hwang,
Wang-Kong Tse
Abstract:
We answer the question posed in the title above by considering theoretically the electron-electron interaction induced many-body effects in undoped (`intrinsic') and doped (`extrinsic') 2D graphene layers. We find that (1) intrinsic graphene is a marginal Fermi liquid with the imaginary part of the self-energy, ${Im}Σ(ω)$, going as linear in energy $ω$ for small $ω$, implying that the quasiparti…
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We answer the question posed in the title above by considering theoretically the electron-electron interaction induced many-body effects in undoped (`intrinsic') and doped (`extrinsic') 2D graphene layers. We find that (1) intrinsic graphene is a marginal Fermi liquid with the imaginary part of the self-energy, ${Im}Σ(ω)$, going as linear in energy $ω$ for small $ω$, implying that the quasiparticle spectral weight vanishes at the Dirac point as $({ln}ω)^{-1}$; and, (2) extrinsic graphene is a well-defined Fermi liquid with ${Im}Σ(ω)\sim ω^2\mathrm{ln}ω$ near the Fermi surface similar to 2D carrier systems with parabolic energy dispersion. We provide analytical and numerical results for quasiparticle renormalization in graphene, concluding that all experimental graphene systems are ordinary 2D Fermi liquids since any do** automatically induces generic Fermi liquid behavior.
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Submitted 19 March, 2007; v1 submitted 20 October, 2006;
originally announced October 2006.
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Dielectric function, screening, and plasmons in 2D graphene
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
The dynamical dielectric function of two dimensional graphene at arbitrary wave vector $q$ and frequency $ω$, $ε(q,ω)$, is calculated in the self-consistent field approximation. The results are used to find the dispersion of the plasmon mode and the electrostatic screening of the Coulomb interaction in 2D graphene layer within the random phase approximation. At long wavelengths ($q\to 0$) the pl…
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The dynamical dielectric function of two dimensional graphene at arbitrary wave vector $q$ and frequency $ω$, $ε(q,ω)$, is calculated in the self-consistent field approximation. The results are used to find the dispersion of the plasmon mode and the electrostatic screening of the Coulomb interaction in 2D graphene layer within the random phase approximation. At long wavelengths ($q\to 0$) the plasmon dispersion shows the local classical behavior $ω_{cl} = ω_0 \sqrt{q}$, but the density dependence of the plasma frequency ($ω_0 \propto n^{1/4}$) is different from the usual 2D electron system ($ω_0 \propto n^{1/2}$). The wave vector dependent plasmon dispersion and the static screening function show very different behavior than the usual 2D case.
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Submitted 15 May, 2007; v1 submitted 19 October, 2006;
originally announced October 2006.
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Carrier transport in 2D graphene layers
Authors:
E. H. Hwang,
S. Adam,
S. Das Sarma
Abstract:
Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n > 10^{12} \rm{cm}^{-2}$) with existing experimental data (Ref. \onlinecite{kn:novoselov2004, kn:novoselov2005, kn:zhang2005, kn:kim2006, kn:fuhrer2006}). The conducti…
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Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n > 10^{12} \rm{cm}^{-2}$) with existing experimental data (Ref. \onlinecite{kn:novoselov2004, kn:novoselov2005, kn:zhang2005, kn:kim2006, kn:fuhrer2006}). The conductivity scales linearly with $n/n_i$ in the theory, and shows extremely weak temperature dependence. The experimentally observed asymmetry between electron and hole conductivities is explained by the asymmetry in the charged impurity configuration in the presence of the gate voltage, while the high-density saturation of conductivity for the highest mobility samples is explained as a crossover between the long-range and the point scattering dominated regimes. We argue that the experimentally observed saturation of conductivity at low density arises from the charged impurity induced inhomogeneity in the graphene carrier density which becomes severe for $n \lesssim n_i \sim 10^{12} \rm{cm}^{-2}$.
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Submitted 4 May, 2007; v1 submitted 5 October, 2006;
originally announced October 2006.
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Transport properties of two-dimensional electron systems on silicon (111) surfaces
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and resistivity for the recently fabricated Si(111)-vacuum FET by using a semiclassical Boltzmann theory including screened charged impurity scattering. We find rea…
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We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and resistivity for the recently fabricated Si(111)-vacuum FET by using a semiclassical Boltzmann theory including screened charged impurity scattering. We find reasonable agreement with the corresponding experimental transport properties, indicating that the screened disorder potential from random charged impurities is the main scattering mechanism. We also find that the theoretical results with the valley degeneracy $g_v=2$ give much better agreement with experiment than the $g_v=6$ situation indicating that the usual bulk six-valley degeneracy of Si is lifted in this system.
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Submitted 29 August, 2006;
originally announced August 2006.
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Hall coefficient and magnetoresistance of 2D spin-polarized electron systems
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
Recent measurements of the 2D Hall resistance show that the Hall coefficient is independent of the applied in-plane magnetic field, i.e., the spin-polarization of the system. We calculate the weak-field Hall coefficient and the magnetoresistance of a spin polarized 2D system using the semi-classical transport approach based on the screening theory. We solve the coupled kinetic equations of the t…
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Recent measurements of the 2D Hall resistance show that the Hall coefficient is independent of the applied in-plane magnetic field, i.e., the spin-polarization of the system. We calculate the weak-field Hall coefficient and the magnetoresistance of a spin polarized 2D system using the semi-classical transport approach based on the screening theory. We solve the coupled kinetic equations of the two carrier system including electron-electron interaction. We find that the in-plane magnetic field dependence of the Hall coefficient is suppressed by the weakening of screening and the electron-electron interaction. However, the in-plane magnetoresistance is mostly determined by the change of the screening of the system, and can therefore be strongly field dependent.
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Submitted 11 January, 2006;
originally announced January 2006.
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Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field
Authors:
S. Das Sarma,
E. H. Hwang
Abstract:
The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier transport. In agreement with recent experimental observations we find an essentially temperature independent magnetoresistivity for carrier densities well into the 2D…
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The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier transport. In agreement with recent experimental observations we find an essentially temperature independent magnetoresistivity for carrier densities well into the 2D metallic regime due to the field-induced lifting of spin and, perhaps, valley degeneracies. In particular the metallic temperature dependence of the ballistic magnetoresistance is strongly suppressed around the zero-temperature critical magnetic field ($B_s$) for full spin-polarization, with the metallic temperature dependence strongest at B=0, weakest around $B \sim B_s$, and intermediate at $B \gg B_s$.
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Submitted 24 July, 2005;
originally announced July 2005.
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Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
The transport properties of diluted magnetic semiconductors (DMS) are calculated using dynamical mean field theory (DMFT) and Boltzmann transport theory. Within DMFT we study the density of states and the dc-resistivity, which are strongly parameter dependent such as temperature, do**, density of the carriers, and the strength of the carrier-local impurity spin exchange coupling. Characteristi…
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The transport properties of diluted magnetic semiconductors (DMS) are calculated using dynamical mean field theory (DMFT) and Boltzmann transport theory. Within DMFT we study the density of states and the dc-resistivity, which are strongly parameter dependent such as temperature, do**, density of the carriers, and the strength of the carrier-local impurity spin exchange coupling. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic mechanism. We find that spin-disorder scattering, formation of bound state, and the population of the minority spin band are all operational in DMFT in different parameter range. We also develop a complementary Boltzmann transport theory for scattering by screened ionized impurities. The difference in the screening properties between paramagnetic ($T>T_c$) and ferromagnetic ($T<T_c$) states gives rise to the temperature dependence (increase or decrease) of resistivity, depending on the carrier density, as the system goes from the paramagnetic phase to the ferromagnetic phase. The metallic behavior below $T_c$ for optimally doped DMS samples can be explained in the Boltzmann theory by temperature dependent screening and thermal change of carrier spin polarization.
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Submitted 3 March, 2005;
originally announced March 2005.
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Metallic behavior in Si/SiGe 2D electron systems
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by screened random charged Coulombic impurity centers. We obtain comprehensive agreement with existing experimental transport data, compellingly establishing th…
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We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by screened random charged Coulombic impurity centers. We obtain comprehensive agreement with existing experimental transport data, compellingly establishing that the observed 2D metallic behavior in low-density Si/SiGe systems arises from the peculiar nature of 2D screening of long-range impurity disorder. In particular, our theory correctly predicts the experimentally observed metallic temperature dependence of 2D resistivity in the fully spin-polarized system.
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Submitted 21 January, 2005;
originally announced January 2005.
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Similarities and Differences in 2D `metallicity' induced by temperature and parallel magnetic field: To screen or not to screen
Authors:
S. Das Sarma,
E. H. Hwang
Abstract:
We compare the effects of temperature and parallel magnetic field on the two-dimensional metallic behavior within the unified model of temperature and field dependent effective disorder arising from the screened charged impurity scattering. We find, consistent with experimental observations, that the temperature and field dependence of resistivity should be qualitatively similar in n-Si MOSFET a…
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We compare the effects of temperature and parallel magnetic field on the two-dimensional metallic behavior within the unified model of temperature and field dependent effective disorder arising from the screened charged impurity scattering. We find, consistent with experimental observations, that the temperature and field dependence of resistivity should be qualitatively similar in n-Si MOSFET and very different in n-GaAs 2D metallic systems.
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Submitted 31 March, 2005; v1 submitted 17 January, 2005;
originally announced January 2005.
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Two Dimensional Diluted Magnetic Semiconductor Systems
Authors:
D. J. Priour Jr,
E. H. Hwang,
S. Das Sarma
Abstract:
We develop a theory for two-dimensional diluted magnetic semiconductor systems (e.g. $\textrm{Ga}_{1-x}\textrm{Mn}_{x}\textrm{As}$ layers) where the itinerant carriers mediating the ferromagnetic interaction between the impurity local moments, as well as the local moments themselves, are confined in a two-dimensional layer. The theory includes exact spatial disorder effects associated with the r…
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We develop a theory for two-dimensional diluted magnetic semiconductor systems (e.g. $\textrm{Ga}_{1-x}\textrm{Mn}_{x}\textrm{As}$ layers) where the itinerant carriers mediating the ferromagnetic interaction between the impurity local moments, as well as the local moments themselves, are confined in a two-dimensional layer. The theory includes exact spatial disorder effects associated with the random local moment positions within a disordered RKKY lattice field theory description. We predict the ferromagnetic transition temperature ($T_{c}$) as well as the nature of the spontaneous magnetization. The theory includes disorder and finite carrier mean free path effects as well as the important correction arising from the {\it finite temperature} RKKY interaction, finding a strong density dependence of $T_{c}$ in contrast to the simple virtual crystal approximation.
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Submitted 4 May, 2005; v1 submitted 7 January, 2005;
originally announced January 2005.
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Temperature dependent weak field Hall resistance in 2D carrier systems
Authors:
S. Das Sarma,
E. H. Hwang
Abstract:
Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers. The temperature dependent 2D Hall coefficient shows striking non-monotonicity in strongly screened systems, and in particular, we qualitatively explain the rece…
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Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers. The temperature dependent 2D Hall coefficient shows striking non-monotonicity in strongly screened systems, and in particular, we qualitatively explain the recent puzzling experimental observation of a decreasing Hall resistance with increasing temperature in a dilute 2D hole system. We predict that the impurity scattering limited Hall coefficient will eventually increase with temperature at higher temperatures.
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Submitted 23 December, 2004; v1 submitted 23 December, 2004;
originally announced December 2004.
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The so-called two dimensional metal-insulator transition
Authors:
S. Das Sarma,
E. H. Hwang
Abstract:
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms underlying the anomalous behavior of the two-dimensional effective metallic phase and the metal-insulator transition itself. We argue that a key feature of the 2D…
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We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms underlying the anomalous behavior of the two-dimensional effective metallic phase and the metal-insulator transition itself. We argue that a key feature of the 2D MIT physics is the long-range bare Coulombic disorder arising from the random distribution of charged impurities in the low-density 2D semiconductor structures.
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Submitted 18 February, 2005; v1 submitted 19 November, 2004;
originally announced November 2004.
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In-plane magnetodrag in dilute bilayer two-dimensional systems: a Fermi liquid theory
Authors:
S. Das Sarma,
E. H. Hwang
Abstract:
Motivated by recent experimental results reporting anomalous drag resistance behavior in dilute bilayer two-dimensional (2D) hole systems in the presence of a magnetic field parallel to the 2D plane, we have carried out a many-body Fermi liquid theory calculation of bilayer magnetodrag comparing it to the corresponding single layer magnetoresistance. In qualitative agreement with experiment we f…
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Motivated by recent experimental results reporting anomalous drag resistance behavior in dilute bilayer two-dimensional (2D) hole systems in the presence of a magnetic field parallel to the 2D plane, we have carried out a many-body Fermi liquid theory calculation of bilayer magnetodrag comparing it to the corresponding single layer magnetoresistance. In qualitative agreement with experiment we find relatively similar behavior in our calculated magnetodrag and magnetoresistance arising from the physical effects of screening being similarly modified ("suppressed") by carrier spin polarization (at "low" field) and the conductivity effective mass being similarly modified ("enhanced") by strong magneto-orbital correction (at "high" fields) in both cases. We critically discuss agreement and disagreement between our theory and the experimental results, concluding that the magnetodrag data are qualitatively consistent with the Fermi liquid theory.
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Submitted 16 August, 2004;
originally announced August 2004.
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2D Metal-Insulator transition as a percolation transition
Authors:
S. Das Sarma,
M. P. Lilly,
E. H. Hwang,
L. N. Pfeiffer,
K. W. West,
J. L. Reno
Abstract:
By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of…
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By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of $\sim 1.4$ approaches the 2D percolation exponent value of 4/3 at low temperatures and our experimental data are inconsistent with there being a zero-temperature quantum critical point in our system.
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Submitted 25 June, 2004;
originally announced June 2004.
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Enhancing $T_c$ in ferromagnetic semiconductors
Authors:
S. Das Sarma,
E. H. Hwang,
D. J. Priour Jr
Abstract:
We theoretically investigate disorder effects on the ferromagnetic transition ('Curie') temperature $T_c$ in dilute III$_{1-x}$Mn$_x$V magnetic semiconductors (e.g. Ga$_{1-x}$Mn$_x$As) where a small fraction ($x \approx 0.01-0.1$) of the cation atoms (e.g. Ga) are randomly replaced by the magnetic dopants (e.g. Mn), leading to long-range ferromagnetic ordering for $T<T_c$. We find that $T_c$ is…
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We theoretically investigate disorder effects on the ferromagnetic transition ('Curie') temperature $T_c$ in dilute III$_{1-x}$Mn$_x$V magnetic semiconductors (e.g. Ga$_{1-x}$Mn$_x$As) where a small fraction ($x \approx 0.01-0.1$) of the cation atoms (e.g. Ga) are randomly replaced by the magnetic dopants (e.g. Mn), leading to long-range ferromagnetic ordering for $T<T_c$. We find that $T_c$ is a complicated function of at least eight different parameters including carrier density, magnetic dopant density, and carrier mean free path; nominally macroscopically similar samples could have substantially different Curie temperatures. We provide simple physically appealing prescriptions for enhancing $T_c$ in diluted magnetic semiconductors, and discuss the magnetic phase diagram in the system parameter space.
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Submitted 1 March, 2004;
originally announced March 2004.
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Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach
Authors:
Belita Koiller,
R. B. Capaz,
Xuedong Hu,
S. Das Sarma
Abstract:
Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study shallow donor electron properties in Si within the Kohn-Luttinger envelope function approach, incorporating the full Bloch states of the six band edges of Si co…
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Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study shallow donor electron properties in Si within the Kohn-Luttinger envelope function approach, incorporating the full Bloch states of the six band edges of Si conduction band, obtained from {\it ab initio} calculations within the density-functional and pseudopotential frameworks. Inter-valley interference between the conduction-band-edge states of Si leads to oscillatory behavior in the charge distribution of one-electron bound states and in the exchange coupling in two-electron states. The behavior in the donor electron charge distribution is strongly influenced by interference from the plane-wave and periodic parts of the Bloch functions. For two donors, oscillations in the exchange coupling calculated within the Heitler-London (HL) approach are due to the plane-wave parts of the Bloch functions alone, which are pinned to the impurity sites. The robustness of this result is assessed by relaxing the phase pinning to the donor sites. We introduce a more general theoretical scheme, the floating-phase HL, from which the previously reported donor exchange oscillatory behavior is qualitatively and quantitatively confirmed. The floating-phase formalism provides a ``handle'' on how to theoretically anticipate the occurrence of oscillatory behavior in electronic properties associated with electron bound states in more general confining potentials, such as in quantum dots.
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Submitted 26 November, 2004; v1 submitted 10 February, 2004;
originally announced February 2004.
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On the temperature dependence of 2D "metallic" conductivity in Si inversion layers at intermediate temperatures
Authors:
S. Das Sarma,
E. H. Hwang
Abstract:
We show that the recent experimental claim [Pudalov {\it et al}. \prl {\bf 91}, 126403 (2003) ] of observing ``interaction effects in the conductivity of Si inversion layers at intermediate temperatures'' is incorrect and misleading. In particular, the temperature dependent conductivity $σ$, in contrast to the resistivity (which is what is shown in the paper), does not have a linear temperature…
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We show that the recent experimental claim [Pudalov {\it et al}. \prl {\bf 91}, 126403 (2003) ] of observing ``interaction effects in the conductivity of Si inversion layers at intermediate temperatures'' is incorrect and misleading. In particular, the temperature dependent conductivity $σ$, in contrast to the resistivity (which is what is shown in the paper), does not have a linear temperature regime, rendering the extraction of the slope $dσ/dT$ completely arbitrary. We also show that, at least for higher densities, the standard semiclassical transport theory, which includes realistic disorder effects such as scattering by {\it screened} charged impurity and surface roughness, gives essentially quantitative agreement with the experimental data.
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Submitted 13 October, 2003;
originally announced October 2003.
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A disordered RKKY lattice mean field theory for ferromagnetism in diluted magnetic semiconductors
Authors:
D. J. Priour Jr,
E. H. Hwang,
S. Das Sarma
Abstract:
We develop a lattice mean field theory for ferromagnetic ordering in diluted magnetic semiconductors by taking into account the spatial fluctuations associated with random disorder in the magnetic impurity locations and the finite mean free path associated with low carrier mobilities. Assuming a carrier-mediated indirect RKKY exchange interaction among the magnetic impurities, we find substantia…
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We develop a lattice mean field theory for ferromagnetic ordering in diluted magnetic semiconductors by taking into account the spatial fluctuations associated with random disorder in the magnetic impurity locations and the finite mean free path associated with low carrier mobilities. Assuming a carrier-mediated indirect RKKY exchange interaction among the magnetic impurities, we find substantial deviation from the extensively used continuum Zener model Weiss mean-field predictions. Our theory allows accurate analytic predictions for Tc, and provides simple explanations for a number of observed anomalies including the non-Brillouin function magnetization curves, the suppressed low-temperature magnetization saturation, and the dependence of Tc on conductivity.
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Submitted 18 May, 2003;
originally announced May 2003.
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How to make semiconductors ferromagnetic: A first course on spintronics
Authors:
S. Das Sarma,
E. H. Hwang,
A. Kaminski
Abstract:
The rapidly develo** field of ferromagnetism in diluted magnetic semiconductors, where a semiconductor host is magnetically doped by transition metal impurities to produce a ferromagnetic semiconductor (e.g. Ga_{1-x}Mn_xAs with x ~ 1-10 %), is discussed with the emphasis on elucidating the physical mechanisms underlying the magnetic properties. Recent key developments are summarized with criti…
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The rapidly develo** field of ferromagnetism in diluted magnetic semiconductors, where a semiconductor host is magnetically doped by transition metal impurities to produce a ferromagnetic semiconductor (e.g. Ga_{1-x}Mn_xAs with x ~ 1-10 %), is discussed with the emphasis on elucidating the physical mechanisms underlying the magnetic properties. Recent key developments are summarized with critical discussions of the roles of disorder, localization, band structure, defects, and the choice of materials in producing good magnetic quality and high Curie temperature. The correlation between magnetic and transport properties is argued to be a crucial ingredient in develo** a full understanding of the properties of ferromagnetic semiconductors.
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Submitted 9 April, 2003;
originally announced April 2003.
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A low density finite temperature apparent "insulating" phase in 2D systems
Authors:
S. Das Sarma,
E. H. Hwang
Abstract:
We propose that the observed low density ``insulating'' phase of a 2D semiconductor system, with the carrier density being just below ($n < n_c$) the so-called critical density where the derivative of resistivity changes sign at low temperatures (i.e. resistivity $ρ(T)$ increases with increasing $T$ for $n > n_c$ whereas it decreases with increasing $T$ for $n < n_c$), is in fact a ``high-temper…
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We propose that the observed low density ``insulating'' phase of a 2D semiconductor system, with the carrier density being just below ($n < n_c$) the so-called critical density where the derivative of resistivity changes sign at low temperatures (i.e. resistivity $ρ(T)$ increases with increasing $T$ for $n > n_c$ whereas it decreases with increasing $T$ for $n < n_c$), is in fact a ``high-temperature'' crossover version of the same effective metallic phase seen at higher densities ($n>n_c$). This low density ($n<n_c$) finite temperature crossover 2D effective insulating phase is characterized by $ρ(T)$ with power law temperature dependence in contrast to the truly insulating state (occurring at still lower densities) whose resistivity increases exponentially with decreasing temperature.
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Submitted 5 February, 2003;
originally announced February 2003.
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Metallicity and its low temperature behavior in dilute 2D carrier systems
Authors:
S. Das Sarma,
E. H. Hwang
Abstract:
We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor. We derive a leading behavior in the transport property, which is exact in the strict 2D approximation and provides a zeroth order explanati…
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We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor. We derive a leading behavior in the transport property, which is exact in the strict 2D approximation and provides a zeroth order explanation for the strength of metallicity in various 2D carrier systems. By carefully comparing the calculated full nonlinear temperature dependence of electronic resistivity at low temperatures with the corresponding asymptotic analytic form obtained in the $T/T_F \to 0$ limit, both within the RPA screened charged impurity scattering theory, we critically discuss the applicability of the linear temperature dependent correction to the low temperature resistivity in 2D semiconductor structures. We find quite generally that for charged ionized impurity scattering screened by the electronic dielectric function (within RPA or its suitable generalizations including local field corrections), the resistivity obeys the asymptotic linear form only in the extreme low temperature limit of $T/T_F \le 0.05$. We point out the experimental implications of our findings and discuss in the context of the screening theory the relative strengths of metallicity in different 2D systems.
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Submitted 1 March, 2004; v1 submitted 3 February, 2003;
originally announced February 2003.
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Temperature-dependent magnetization in diluted magnetic semiconductors
Authors:
S. Das Sarma,
E. H. Hwang,
A. Kaminski
Abstract:
We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of our mean-field calculations, particularly the dynamical mean field theory results, give excellent qualitative agreement with the experimentally observed magne…
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We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of our mean-field calculations, particularly the dynamical mean field theory results, give excellent qualitative agreement with the experimentally observed magnetization in systems with itinerant charge carriers, such as Ga_{1-x}Mn_xAs with 0.03 < x < 0.07, whereas our percolation-theory-based calculations agree well with the existing data in strongly insulating materials, such as Ge_{1-x}Mn_x. We comment on the issue of non-mean-field like magnetization curves and on the observed incomplete saturation magnetization values in diluted magnetic semiconductors from our theoretical perspective. In agreement with experimental observations, we find the carrier density to be the crucial parameter determining the magnetization behavior. Our calculated dependence of magnetization on external magnetic field is also in excellent agreement with the existing experimental data.
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Submitted 21 November, 2002;
originally announced November 2002.
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Resistivity of dilute 2D electrons in an undoped GaAs heterostructure
Authors:
M. P. Lilly,
J. L. Reno,
J. A. Simmons,
I. B. Spielman,
J. P. Eisenstein,
L. N. Pfeiffer,
K. W. West,
E. H. Hwang,
S. Das Sarma
Abstract:
We report resistivity measurements from 0.03 K to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, $0.16 \times 10^{10} {cm}^{-2}$ to $7.5 \times 10^{10} {cm}^{-2}$, are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons…
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We report resistivity measurements from 0.03 K to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, $0.16 \times 10^{10} {cm}^{-2}$ to $7.5 \times 10^{10} {cm}^{-2}$, are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This non-monotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.
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Submitted 8 October, 2002;
originally announced October 2002.
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Interaction Corrections to Two-Dimensional Hole Transport in Large $r_{s}$ Limit
Authors:
Hwayong Noh,
M. P. Lilly,
D. C. Tsui,
J. A. Simmons,
E. H. Hwang,
S. Das Sarma,
L. N. Pfeiffer,
K. W. West
Abstract:
The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest,…
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The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter $F_{0}^σ$ determined from the experiment, however, decreases with increasing $r_{s}$ for $r_{s}\agt22$, a behavior unexpected from existing theoretical calculations valid for small $r_{s}$.
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Submitted 16 December, 2002; v1 submitted 26 June, 2002;
originally announced June 2002.
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Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
We calculate the temperature dependent resistivity in spin-split subbands induced by the inversion asymmetry of the confining potential in GaAs 2D hole systems. By considering both temperature dependent multisubband screening of impurity disorder and hole-hole scattering we find that the strength of the metallic behavior depends on the symmetry of the confining potential (i.e., spin-splitting) o…
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We calculate the temperature dependent resistivity in spin-split subbands induced by the inversion asymmetry of the confining potential in GaAs 2D hole systems. By considering both temperature dependent multisubband screening of impurity disorder and hole-hole scattering we find that the strength of the metallic behavior depends on the symmetry of the confining potential (i.e., spin-splitting) over a large range of hole density. At low density above the metal-insulator transition we find that effective disorder reduces the enhancement of the metallic behavior induced by spin-splitting. Our theory is in good qualitative agreement with existing experiments.
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Submitted 13 March, 2002;
originally announced March 2002.
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Frictional drag in dilute bilayer 2D hole systems
Authors:
E. H. Hwang,
S. Das Sarma,
V. Braude,
Ady Stern
Abstract:
We develop a theory for frictional drag between two 2D hole layers in a dilute bilayer GaAs hole system, including effects of hole-hole and hole-phonon interactions. Our calculations suggest significant enhancement of hole drag transresistivity over the corresponding electron drag results. This enhancement originates from the exchange induced renormalization of the single layer compressibility a…
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We develop a theory for frictional drag between two 2D hole layers in a dilute bilayer GaAs hole system, including effects of hole-hole and hole-phonon interactions. Our calculations suggest significant enhancement of hole drag transresistivity over the corresponding electron drag results. This enhancement originates from the exchange induced renormalization of the single layer compressibility and the strong dependence of single layer conductivity on density. We also address the effect of hole-phonon interaction on the drag temperature dependence. Our calculated results are in reasonable quantitative agreement with recent experimental observations.
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Submitted 31 July, 2002; v1 submitted 14 February, 2002;
originally announced February 2002.
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Optical Conductivity of Ferromagnetic Semiconductors
Authors:
E. H. Hwang,
A. J. Millis,
S. Das Sarma
Abstract:
The dynamical mean field method is used to calculate the frequency and temperature dependent conductivity of dilute magnetic semiconductors. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic mechanism.
The dynamical mean field method is used to calculate the frequency and temperature dependent conductivity of dilute magnetic semiconductors. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic mechanism.
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Submitted 5 February, 2002;
originally announced February 2002.
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The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state
Authors:
A. Lewalle,
M. Pepper,
C. J. B. Ford,
E. H. Hwang,
S. Das Sarma,
D. J. Paul,
G. Redmond
Abstract:
The effect of substrate bias and surface gate voltage on the low temperature resistivity of a Si-MOSFET is studied for electron concentrations where the resistivity increases with increasing temperature. This technique offers two degrees of freedom for controlling the electron concentration and the device mobility, thereby providing a means to evaluate the relative importance of electron-electro…
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The effect of substrate bias and surface gate voltage on the low temperature resistivity of a Si-MOSFET is studied for electron concentrations where the resistivity increases with increasing temperature. This technique offers two degrees of freedom for controlling the electron concentration and the device mobility, thereby providing a means to evaluate the relative importance of electron-electron interactions and disorder in this so-called ``metallic'' regime. For temperatures well below the Fermi temperature, the data obey a scaling law where the disorder parameter ($k_{\rm{F}}l$), and not the concentration, appears explicitly. This suggests that interactions, although present, do not alter the Fermi-liquid properties of the system fundamentally. Furthermore, this experimental observation is reproduced in results of calculations based on temperature-dependent screening, in the context of Drude-Boltzmann theory.
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Submitted 15 August, 2001;
originally announced August 2001.
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Analysis of the resistance in p-SiGe over a wide temperature range
Authors:
V. Senz,
T. Ihn,
T. Heinzel,
K. Ensslin,
G. Dehlinger,
D. Grützmacher,
U. Gennser,
E. H. Hwang,
S. Das Sarma
Abstract:
The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insu…
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The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate $1/\td(E,T)$, each dominating in a limited temperature range.
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Submitted 17 July, 2001;
originally announced July 2001.
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Plasmon dispersion in dilute 2D electron systems: Quantum-Classical and Wigner Crystal-Electron Liquid Crossover
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
We theoretically calculate the finite wave vector plasmon dispersion in a low density 2D electron layer taking into account finite temperature, finite layer width, and local field corrections. We compare our theoretical results with recent Raman scattering spectroscopic experimental 2D plasmon dispersion data in GaAs quantum wells at very low carrier densities ($r_s > 10$) and large wave vectors…
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We theoretically calculate the finite wave vector plasmon dispersion in a low density 2D electron layer taking into account finite temperature, finite layer width, and local field corrections. We compare our theoretical results with recent Raman scattering spectroscopic experimental 2D plasmon dispersion data in GaAs quantum wells at very low carrier densities ($r_s > 10$) and large wave vectors ($q \ge k_F$). We find good agreement with the experimental data, providing an explanation for why the experimentally measured dispersion seems to obey the simple classical long wavelength 2D plasmon dispersion formula. We also provide a critical discussion on the observable manifestations of the quantum-classical and the Wigner crystal - electron liquid crossover behavior in the 2D plasmon properties as a function of electron density and temperature in GaAs quantum well systems.
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Submitted 4 February, 2001;
originally announced February 2001.
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Correlation induced phonon softening in low density coupled bilayer systems
Authors:
E. H. Hwang,
S. Das Sarma
Abstract:
We predict a possible phonon softening instability in strongly correlated coupled semiconductor bilayer systems. By studying the plasmon-phonon coupling in coupled bilayer structures, we find that the renormalized acoustic phonon frequency may be softened at a finite wave vector due to many-body local field corrections, particularly in low density systems where correlation effects are strong. We…
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We predict a possible phonon softening instability in strongly correlated coupled semiconductor bilayer systems. By studying the plasmon-phonon coupling in coupled bilayer structures, we find that the renormalized acoustic phonon frequency may be softened at a finite wave vector due to many-body local field corrections, particularly in low density systems where correlation effects are strong. We discuss experimental possibilities to search for this predicted phonon softening phenomenon.
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Submitted 27 December, 2000;
originally announced December 2000.
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Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior
Authors:
S. Das Sarma,
E. H. Hwang,
Igor Zutic
Abstract:
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and non-monotonic temperature dependent resistivity.
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and non-monotonic temperature dependent resistivity.
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Submitted 27 March, 2000;
originally announced March 2000.
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Calculated temperature-dependent resistance in low density 2D hole gases in GaAs heterostructure
Authors:
S. Das Sarma,
E. H. Hwang
Abstract:
We calculate the low temperature resistivity in low density 2D hole gases in GaAs heterostructures by including screened charged impurity and phonon scattering in the theory. Our calculated resistance, which shows striking temperature dependent non-monotonicity arising from the competition among screening, nondegeneracy, and phonon effects, is in excellent agreement with recent experimental data…
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We calculate the low temperature resistivity in low density 2D hole gases in GaAs heterostructures by including screened charged impurity and phonon scattering in the theory. Our calculated resistance, which shows striking temperature dependent non-monotonicity arising from the competition among screening, nondegeneracy, and phonon effects, is in excellent agreement with recent experimental data.
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Submitted 5 January, 2000;
originally announced January 2000.
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Parallel magnetic field induced giant magnetoresistance in low density {\it quasi}-two dimensional layers
Authors:
S. Das Sarma,
E. H. Hwang
Abstract:
We provide a possible theoretical explanation for the recently observed giant positive magnetoresistance in high mobility low density {\it quasi}-two dimensional electron and hole systems. Our explanation is based on the strong coupling of the parallel field to the {\it orbital} motion arising from the {\it finite} layer thickness and the large Fermi wavelength of the {\it quasi}-two dimensional…
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We provide a possible theoretical explanation for the recently observed giant positive magnetoresistance in high mobility low density {\it quasi}-two dimensional electron and hole systems. Our explanation is based on the strong coupling of the parallel field to the {\it orbital} motion arising from the {\it finite} layer thickness and the large Fermi wavelength of the {\it quasi}-two dimensional system at low carrier densities.
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Submitted 24 April, 2000; v1 submitted 30 September, 1999;
originally announced September 1999.
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Role of confined phonons in thin film superconductivity
Authors:
E. H. Hwang,
S. Das Sarma,
M. A. Stroscio
Abstract:
We calculate the critical temperature $T_c$ and the superconducting energy gaps $Δ_n$ of a thin film superconductor system, where $Δ_n$ is the superconducting energy gap of the $n$-th subband. Since the quantization of both the electron energy and phonon spectrum arises due to dimensional confinement in one direction, the effective electron-electron interaction mediated by the quantized confined…
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We calculate the critical temperature $T_c$ and the superconducting energy gaps $Δ_n$ of a thin film superconductor system, where $Δ_n$ is the superconducting energy gap of the $n$-th subband. Since the quantization of both the electron energy and phonon spectrum arises due to dimensional confinement in one direction, the effective electron-electron interaction mediated by the quantized confined phonons is different from that mediated by the bulk phonon, leading to the modification of $T_c$ in the thin film system. We investigate the dependence of $T_c$ and $Δ_n$ on the film thickness $d$ with this modified interaction.
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Submitted 26 August, 1999;
originally announced August 1999.
