Showing 1–50 of 161 results for author: Hwang, E

Universal Gloss-level Representation for Gloss-free Sign Language Translation and Production

Authors: Eui Jun Hwang, Sukmin Cho, Huije Lee, Youngwoo Yoon, Jong C. Park

Abstract: Sign language, essential for the deaf and hard-of-hearing, presents unique challenges in translation and production due to its multimodal nature and the inherent ambiguity in map** sign language motion to spoken language words. Previous methods often rely on gloss annotations, requiring time-intensive labor and specialized expertise in sign language. Gloss-free methods have emerged to address th… ▽ More Sign language, essential for the deaf and hard-of-hearing, presents unique challenges in translation and production due to its multimodal nature and the inherent ambiguity in map** sign language motion to spoken language words. Previous methods often rely on gloss annotations, requiring time-intensive labor and specialized expertise in sign language. Gloss-free methods have emerged to address these limitations, but they often depend on external sign language data or dictionaries, failing to completely eliminate the need for gloss annotations. There is a clear demand for a comprehensive approach that can supplant gloss annotations and be utilized for both Sign Language Translation (SLT) and Sign Language Production (SLP). We introduce Universal Gloss-level Representation (UniGloR), a unified and self-supervised solution for both SLT and SLP, trained on multiple datasets including PHOENIX14T, How2Sign, and NIASL2021. Our results demonstrate UniGloR's effectiveness in the translation and production tasks. We further report an encouraging result for the Sign Language Recognition (SLR) on previously unseen data. Our study suggests that self-supervised learning can be made in a unified manner, paving the way for innovative and practical applications in future research. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Comments: 14 pages, 5 figures

From Local Concepts to Universals: Evaluating the Multicultural Understanding of Vision-Language Models

Authors: Mehar Bhatia, Sahithya Ravi, Aditya Chinchure, Eunjeong Hwang, Vered Shwartz

Abstract: Despite recent advancements in vision-language models, their performance remains suboptimal on images from non-western cultures due to underrepresentation in training datasets. Various benchmarks have been proposed to test models' cultural inclusivity, but they have limited coverage of cultures and do not adequately assess cultural diversity across universal as well as culture-specific local conce… ▽ More Despite recent advancements in vision-language models, their performance remains suboptimal on images from non-western cultures due to underrepresentation in training datasets. Various benchmarks have been proposed to test models' cultural inclusivity, but they have limited coverage of cultures and do not adequately assess cultural diversity across universal as well as culture-specific local concepts. To address these limitations, we introduce the GlobalRG benchmark, comprising two challenging tasks: retrieval across universals and cultural visual grounding. The former task entails retrieving culturally diverse images for universal concepts from 50 countries, while the latter aims at grounding culture-specific concepts within images from 15 countries. Our evaluation across a wide range of models reveals that the performance varies significantly across cultures -- underscoring the necessity for enhancing multicultural understanding in vision-language models. △ Less

Submitted 28 June, 2024; originally announced July 2024.

Comments: Under peer review

SUMIE: A Synthetic Benchmark for Incremental Entity Summarization

Authors: Eunjeong Hwang, Yichao Zhou, Beliz Gunel, James Bradley Wendt, Sandeep Tata

Abstract: No existing dataset adequately tests how well language models can incrementally update entity summaries - a crucial ability as these models rapidly advance. The Incremental Entity Summarization (IES) task is vital for maintaining accurate, up-to-date knowledge. To address this, we introduce SUMIE, a fully synthetic dataset designed to expose real-world IES challenges. This dataset effectively high… ▽ More No existing dataset adequately tests how well language models can incrementally update entity summaries - a crucial ability as these models rapidly advance. The Incremental Entity Summarization (IES) task is vital for maintaining accurate, up-to-date knowledge. To address this, we introduce SUMIE, a fully synthetic dataset designed to expose real-world IES challenges. This dataset effectively highlights problems like incorrect entity association and incomplete information presentation. Unlike common synthetic datasets, ours captures the complexity and nuances found in real-world data. We generate informative and diverse attributes, summaries, and unstructured paragraphs in sequence, ensuring high quality. The alignment between generated summaries and paragraphs exceeds 96%, confirming the dataset's quality. Extensive experiments demonstrate the dataset's difficulty - state-of-the-art LLMs struggle to update summaries with an F1 higher than 80.4%. We will open source the benchmark and the evaluation metrics to help the community make progress on IES tasks. △ Less

Submitted 7 June, 2024; originally announced June 2024.

Comments: 24 figures, 4 tables

Investigation of nanophotonic lithium niobate waveguides for on-chip evanescent wave sensing

Authors: Nathan A. Harper, Emily Y. Hwang, Philip A. Kocheril, Tze King Lam, Scott K. Cushing

Abstract: Thin-film lithium niobate is a promising photonic platform for on-chip optical sensing because both nonlinear and linear components can be fabricated within one integrated device. To date, waveguided sample interactions for thin-film lithium niobate are not well explored. Compared to other integrated platforms, lithium niobate's high refractive index, birefringence, and angled sidewalls present un… ▽ More Thin-film lithium niobate is a promising photonic platform for on-chip optical sensing because both nonlinear and linear components can be fabricated within one integrated device. To date, waveguided sample interactions for thin-film lithium niobate are not well explored. Compared to other integrated platforms, lithium niobate's high refractive index, birefringence, and angled sidewalls present unique design challenges for evanescent wave sensing. Here, we compare the performance of the quasi-transverse-electric (TE) and the quasi-transverse-magnetic (TM) mode for sensing on a thin-film lithium niobate rib waveguide with a 5 mM dye-doped polymer cladding pumped at 406 nm. We determine that both modes have propagation losses dominated by scatter, and that the absorption due to the sample only accounts for 3% of the measured losses for both modes. The TM mode has better overlap with the sample than the TE mode, but the TM mode also has a stronger propagation loss due to sidewall and sample induced scattering (32.5 $\pm$ 0.3 dB/cm) compared to the TE mode (23.0 $\pm$ 0.2 dB/cm). The TE mode is, therefore, more appropriate for sensing. Our findings have important implications for on-chip lithium niobate-based sensor designs. △ Less

Submitted 15 May, 2024; v1 submitted 6 March, 2024; originally announced March 2024.

Comments: 9 pages, 3 figures (main text); 6 pages, 5 figures (supplemental). Submitted to Optics Express

Recent developments of selective laser processes for wearable devices

Authors: Youngchan Kim, Eunseung Hwang, Chang Kai, Kaichen Xu, Heng Pan, Sukjoon Hong

Abstract: Recently, the growing interest in wearable technology for personal healthcare and smart VR/AR applications newly imposed a need for development of facile fabrication method. Regarding the issue, laser has long been proposing original answers to such challenging technological demands with its remote, sterile, rapid, and site-selective processing characteristics for arbitrary materials. In this revi… ▽ More Recently, the growing interest in wearable technology for personal healthcare and smart VR/AR applications newly imposed a need for development of facile fabrication method. Regarding the issue, laser has long been proposing original answers to such challenging technological demands with its remote, sterile, rapid, and site-selective processing characteristics for arbitrary materials. In this review, recent developments in relevant laser processes are summarized in two separate categories. Firstly, transformative approaches represented by laser-induced graphene (LIG) are introduced. Apart from design optimization and alteration of native substrate, latest advancements in the transformative approach now enable not only more complex material compositions but also multilayer device configurations by simultaneous transformation of heterogeneous precursor or sequential addition of functional layers coupled with other electronic elements. Besides, more conventional laser techniques such as ablation, sintering and synthesis are still accessible for enhancing the functionality of the entire system through expansion of applicable materials and adoption of new mechanisms. Various wearable device components developed through the corresponding laser processes are then organized with emphasis on chemical/physical sensors and energy devices. At the same time, special attention is given to the applications utilizing multiple laser sources or multiple laser processes, which pave the way towards all-laser fabrication of wearable devices. △ Less

Submitted 28 November, 2023; originally announced January 2024.

Lost Your Style? Navigating with Semantic-Level Approach for Text-to-Outfit Retrieval

Authors: Junkyu Jang, Eugene Hwang, Sung-Hyuk Park

Abstract: Fashion stylists have historically bridged the gap between consumers' desires and perfect outfits, which involve intricate combinations of colors, patterns, and materials. Although recent advancements in fashion recommendation systems have made strides in outfit compatibility prediction and complementary item retrieval, these systems rely heavily on pre-selected customer choices. Therefore, we int… ▽ More Fashion stylists have historically bridged the gap between consumers' desires and perfect outfits, which involve intricate combinations of colors, patterns, and materials. Although recent advancements in fashion recommendation systems have made strides in outfit compatibility prediction and complementary item retrieval, these systems rely heavily on pre-selected customer choices. Therefore, we introduce a groundbreaking approach to fashion recommendations: text-to-outfit retrieval task that generates a complete outfit set based solely on textual descriptions given by users. Our model is devised at three semantic levels-item, style, and outfit-where each level progressively aggregates data to form a coherent outfit recommendation based on textual input. Here, we leverage strategies similar to those in the contrastive language-image pretraining model to address the intricate-style matrix within the outfit sets. Using the Maryland Polyvore and Polyvore Outfit datasets, our approach significantly outperformed state-of-the-art models in text-video retrieval tasks, solidifying its effectiveness in the fashion recommendation domain. This research not only pioneers a new facet of fashion recommendation systems, but also introduces a method that captures the essence of individual style preferences through textual descriptions. △ Less

Submitted 3 November, 2023; originally announced November 2023.

Comments: 10pages, 2024 WACV Accepted

Highly efficient visible and near-IR photon pair generation with thin-film lithium niobate

Authors: Nathan A. Harper, Emily Y. Hwang, Ryoto Sekine, Luis Ledezma, Christian Perez, Alireza Marandi, Scott K. Cushing

Abstract: Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables the use of more accessible silicon detector technology and opens up applications in imaging and spectroscopy. Here, we present high brightness (… ▽ More Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables the use of more accessible silicon detector technology and opens up applications in imaging and spectroscopy. Here, we present high brightness ($(1.6 \pm 0.3) \times 10^{9}$ pairs/mW/nm) visible-near-IR photon pair generation in a periodically poled lithium niobate nanophotonic waveguide. The degenerate spectrum of the photon pairs is centered at 811 nm with a bandwidth of 117 nm. The measured on-chip source efficiency of $(2.3\pm 0.5) \times 10^{11}$ pairs/mW is on par with source efficiencies at telecom wavelengths and is also orders of magnitude higher than the efficiencies of other visible sources implemented in bulk crystal or diffused waveguide-based technologies. These results represent the shortest wavelength of photon pairs generated in a nanophotonic waveguide reported to date by nearly an octave. △ Less

Submitted 12 October, 2023; v1 submitted 10 October, 2023; originally announced October 2023.

Comments: Main text: 10 pages, 6 figures; Supplementary material: 5 pages, 3 figures. Author initials updated

Autoregressive Sign Language Production: A Gloss-Free Approach with Discrete Representations

Authors: Eui Jun Hwang, Huije Lee, Jong C. Park

Abstract: Gloss-free Sign Language Production (SLP) offers a direct translation of spoken language sentences into sign language, bypassing the need for gloss intermediaries. This paper presents the Sign language Vector Quantization Network, a novel approach to SLP that leverages Vector Quantization to derive discrete representations from sign pose sequences. Our method, rooted in both manual and non-manual… ▽ More Gloss-free Sign Language Production (SLP) offers a direct translation of spoken language sentences into sign language, bypassing the need for gloss intermediaries. This paper presents the Sign language Vector Quantization Network, a novel approach to SLP that leverages Vector Quantization to derive discrete representations from sign pose sequences. Our method, rooted in both manual and non-manual elements of signing, supports advanced decoding methods and integrates latent-level alignment for enhanced linguistic coherence. Through comprehensive evaluations, we demonstrate superior performance of our method over prior SLP methods and highlight the reliability of Back-Translation and Fréchet Gesture Distance as evaluation metrics. △ Less

Submitted 8 June, 2024; v1 submitted 21 September, 2023; originally announced September 2023.

Comments: 5 pages, 3 figures, 6 tables

Aligning Language Models to User Opinions

Authors: EunJeong Hwang, Bodhisattwa Prasad Majumder, Niket Tandon

Abstract: An important aspect of develo** LLMs that interact with humans is to align models' behavior to their users. It is possible to prompt an LLM into behaving as a certain persona, especially a user group or ideological persona the model captured during its pertaining stage. But, how to best align an LLM with a specific user and not a demographic or ideological group remains an open question. Mining… ▽ More An important aspect of develo** LLMs that interact with humans is to align models' behavior to their users. It is possible to prompt an LLM into behaving as a certain persona, especially a user group or ideological persona the model captured during its pertaining stage. But, how to best align an LLM with a specific user and not a demographic or ideological group remains an open question. Mining public opinion surveys (by Pew Research), we find that the opinions of a user and their demographics and ideologies are not mutual predictors. We use this insight to align LLMs by modeling both user opinions as well as user demographics and ideology, achieving up to 7 points accuracy gains in predicting public opinions from survey questions across a broad set of topics. In addition to the typical approach of prompting LLMs with demographics and ideology, we discover that utilizing the most relevant past opinions from individual users enables the model to predict user opinions more accurately. △ Less

Submitted 24 May, 2023; originally announced May 2023.

MemeCap: A Dataset for Captioning and Interpreting Memes

Authors: EunJeong Hwang, Vered Shwartz

Abstract: Memes are a widely popular tool for web users to express their thoughts using visual metaphors. Understanding memes requires recognizing and interpreting visual metaphors with respect to the text inside or around the meme, often while employing background knowledge and reasoning abilities. We present the task of meme captioning and release a new dataset, MemeCap. Our dataset contains 6.3K memes al… ▽ More Memes are a widely popular tool for web users to express their thoughts using visual metaphors. Understanding memes requires recognizing and interpreting visual metaphors with respect to the text inside or around the meme, often while employing background knowledge and reasoning abilities. We present the task of meme captioning and release a new dataset, MemeCap. Our dataset contains 6.3K memes along with the title of the post containing the meme, the meme captions, the literal image caption, and the visual metaphors. Despite the recent success of vision and language (VL) models on tasks such as image captioning and visual question answering, our extensive experiments using state-of-the-art VL models show that they still struggle with visual metaphors, and perform substantially worse than humans. △ Less

Submitted 23 May, 2023; originally announced May 2023.

Tunable and efficient ultraviolet generation in nanophotonic lithium niobate

Authors: Emily Hwang, Nathan Harper, Ryoto Sekine, Luis Ledezma, Alireza Marandi, Scott K. Cushing

Abstract: On-chip ultraviolet sources are of great interest for building compact and scalable atomic clocks, quantum computers, and spectrometers; however, few material platforms are suitable for integrated ultraviolet light generation. Of these materials, thin-film lithium niobate is the most competitive due to its ability to be quasi-phase-matched, optical confinement, and nonlinear properties. Here, we p… ▽ More On-chip ultraviolet sources are of great interest for building compact and scalable atomic clocks, quantum computers, and spectrometers; however, few material platforms are suitable for integrated ultraviolet light generation. Of these materials, thin-film lithium niobate is the most competitive due to its ability to be quasi-phase-matched, optical confinement, and nonlinear properties. Here, we present efficient (197 $\pm$ 5 %/W/cm$^{2}$) second harmonic generation of UV-A light in a periodically poled lithium niobate nanophotonic waveguide. We achieve on-chip ultraviolet powers of 30 $μ$W, demonstrating the potential for compact frequency-doubling of common near-IR laser diodes. By using a large cross section waveguide (600 nm film thickness), we achieve insensitivity to fabrication errors, and can attain first-order quasi-phase-matching with relatively long poling periods (>1.5 $μ$m). The device also demonstrates linear wavelength tunability using temperature. By varying the poling period, we have achieved the shortest reported wavelength (355 nm) generated through frequency doubling in thin-film lithium niobate. Our results open up new avenues to realize ultraviolet on-chip sources and chip-scale photonics. △ Less

Submitted 17 March, 2023; originally announced March 2023.

Revisiting the Gamow Factor of Reactions on Light Nuclei

Authors: Eunseok Hwang, Heamin Ko, Kyoungsu Heo, Myung-Ki Cheoun, Dukjae Jang

Abstract: This study provides an improved understanding of the penetration probabilities (PPs) in nuclear reactions of light nuclei by correcting the assumptions used in the conventional Gamow factor. The Gamow factor effectively describes the PP in nuclear reactions based on two assumptions: low particle energy than the Coulomb barrier and neglecting the dependence of nuclear interaction potential. However… ▽ More This study provides an improved understanding of the penetration probabilities (PPs) in nuclear reactions of light nuclei by correcting the assumptions used in the conventional Gamow factor. The Gamow factor effectively describes the PP in nuclear reactions based on two assumptions: low particle energy than the Coulomb barrier and neglecting the dependence of nuclear interaction potential. However, we find that the assumptions are not valid for light nuclei. As a result of a calculation that excludes the assumptions, we obtain the PP that depends on the nuclear interaction potential depth for the light nuclei. For the potential depth fitted by the experimental fusion cross-section, we present that PPs of light nuclei (D+D, D+T, D+$^3$He, p+D, p+$^6$Li, and p+$^7$Li) become higher than the conventional one near the Coulomb barrier. We also discuss the implications of the modified PP, such as changes in the Gamow peak energy, which determine the measurement of the energy range of the nuclear cross-section in experiments, and the electron screening effect. △ Less

Submitted 22 February, 2023; v1 submitted 20 February, 2023; originally announced February 2023.

Journal ref: Astrophys. J. 955, 79 (2023)

Effects of electromagnetic fluctuations in plasmas on solar neutrino fluxes

Authors: Eunseok Hwang, Dukjae Jang, Kiwan Park, Motohiko Kusakabe, Toshitaka Ka**o, A. Baha Balantekin, Tomoyuki Maruyama, Youngshin Kwon, Kyu** Kwak, Myung-Ki Cheoun

Abstract: We explore the effects of electromagnetic (EM) fluctuations in plasmas on solar neutrino fluxes exploiting the fluctuation-dissipation theorem. We find that the EM spectrum in the solar core is enhanced by the EM fluctuations due to the high density of the Sun, which increases the radiation energy density and pressure. By the EM fluctuations involving the modified radiation formula, the central te… ▽ More We explore the effects of electromagnetic (EM) fluctuations in plasmas on solar neutrino fluxes exploiting the fluctuation-dissipation theorem. We find that the EM spectrum in the solar core is enhanced by the EM fluctuations due to the high density of the Sun, which increases the radiation energy density and pressure. By the EM fluctuations involving the modified radiation formula, the central temperature decreases when the central pressure of the Sun is fixed. With a help of the empirical relation between central temperature and neutrino fluxes deduced from the numerical solar models, we present the change in each of the solar neutrino fluxes by the EM fluctuations. We also discuss the enhanced radiation pressure and energy density by the EM fluctuations for other astronomical objects. △ Less

Submitted 2 November, 2022; originally announced November 2022.

N-pad : Neighboring Pixel-based Industrial Anomaly Detection

Authors: JunKyu Jang, Eugene Hwang, Sung-Hyuk Park

Abstract: Identifying defects in the images of industrial products has been an important task to enhance quality control and reduce maintenance costs. In recent studies, industrial anomaly detection models were developed using pre-trained networks to learn nominal representations. To employ the relative positional information of each pixel, we present \textit{\textbf{N-pad}}, a novel method for anomaly dete… ▽ More Identifying defects in the images of industrial products has been an important task to enhance quality control and reduce maintenance costs. In recent studies, industrial anomaly detection models were developed using pre-trained networks to learn nominal representations. To employ the relative positional information of each pixel, we present \textit{\textbf{N-pad}}, a novel method for anomaly detection and segmentation in a one-class learning setting that includes the neighborhood of the target pixel for model training and evaluation. Within the model architecture, pixel-wise nominal distributions are estimated by using the features of neighboring pixels with the target pixel to allow possible marginal misalignment. Moreover, the centroids from clusters of nominal features are identified as a representative nominal set. Accordingly, anomaly scores are inferred based on the Mahalanobis distances and Euclidean distances between the target pixel and the estimated distributions or the centroid set, respectively. Thus, we have achieved state-of-the-art performance in MVTec-AD with AUROC of 99.37 for anomaly detection and 98.75 for anomaly segmentation, reducing the error by 34\% compared to the next best performing model. Experiments in various settings further validate our model. △ Less

Submitted 17 October, 2022; originally announced October 2022.

Non-Autoregressive Sign Language Production via Knowledge Distillation

Authors: Eui Jun Hwang, Jung Ho Kim, Suk Min Cho, Jong C. Park

Abstract: Sign Language Production (SLP) aims to translate expressions in spoken language into corresponding ones in sign language, such as skeleton-based sign poses or videos. Existing SLP models are either AutoRegressive (AR) or Non-Autoregressive (NAR). However, AR-SLP models suffer from regression to the mean and error propagation during decoding. NSLP-G, a NAR-based model, resolves these issues to some… ▽ More Sign Language Production (SLP) aims to translate expressions in spoken language into corresponding ones in sign language, such as skeleton-based sign poses or videos. Existing SLP models are either AutoRegressive (AR) or Non-Autoregressive (NAR). However, AR-SLP models suffer from regression to the mean and error propagation during decoding. NSLP-G, a NAR-based model, resolves these issues to some extent but engenders other problems. For example, it does not consider target sign lengths and suffers from false decoding initiation. We propose a novel NAR-SLP model via Knowledge Distillation (KD) to address these problems. First, we devise a length regulator to predict the end of the generated sign pose sequence. We then adopt KD, which distills spatial-linguistic features from a pre-trained pose encoder to alleviate false decoding initiation. Extensive experiments show that the proposed approach significantly outperforms existing SLP models in both Frechet Gesture Distance and Back-Translation evaluation. △ Less

Submitted 12 August, 2022; originally announced August 2022.

Comments: 10 pages, 4 figures, 3 tables, submitted to ECCV2023

A Multi-View Learning Approach to Enhance Automatic 12-Lead ECG Diagnosis Performance

Authors: Jae-Won Choi, Dae-Yong Hong, Chan Jung, Eugene Hwang, Sung-Hyuk Park, Seung-Young Roh

Abstract: The performances of commonly used electrocardiogram (ECG) diagnosis models have recently improved with the introduction of deep learning (DL). However, the impact of various combinations of multiple DL components and/or the role of data augmentation techniques on the diagnosis have not been sufficiently investigated. This study proposes an ensemble-based multi-view learning approach with an ECG au… ▽ More The performances of commonly used electrocardiogram (ECG) diagnosis models have recently improved with the introduction of deep learning (DL). However, the impact of various combinations of multiple DL components and/or the role of data augmentation techniques on the diagnosis have not been sufficiently investigated. This study proposes an ensemble-based multi-view learning approach with an ECG augmentation technique to achieve a higher performance than traditional automatic 12-lead ECG diagnosis methods. The data analysis results show that the proposed model reports an F1 score of 0.840, which outperforms existing state-ofthe-art methods in the literature. △ Less

Submitted 30 July, 2022; originally announced August 2022.

Comments: 9 pages, 3 figures, and 5 tables

Diffusive density response of electrons in anisotropic multiband systems

Authors: Jeonghyeon Suh, Sunghoon Kim, E. H. Hwang, Hongki Min

Abstract: We explicitly calculate the density-density response function with conserving vertex corrections for anisotropic multiband systems in the presence of impurities including long-range disorder. The direction-dependence of the vertex corrections is correctly considered to obtain the diffusion constant which is given by the combination of the componentwise transport relaxation times and velocities on… ▽ More We explicitly calculate the density-density response function with conserving vertex corrections for anisotropic multiband systems in the presence of impurities including long-range disorder. The direction-dependence of the vertex corrections is correctly considered to obtain the diffusion constant which is given by the combination of the componentwise transport relaxation times and velocities on the Fermi surface. We also investigate the diffusive density response of various anisotropic systems, propose some empirical rules for the corresponding diffusion constant, and demonstrate that it is crucial to consider the component-dependence of the transport relaxation times to correctly interpret the transport properties of anisotropic systems, especially various topological materials with a different power-law dispersion in each direction. △ Less

Submitted 25 September, 2022; v1 submitted 28 January, 2022; originally announced January 2022.

Comments: 20 pages, 5 figures

Journal ref: Phys. Rev. B 106, L121113 (2022)

Charge-Density-Wave Proximity Effects in Graphene

Authors: Boram Kim, Jeehoon Park, **shu Li, Hongsik Lim, Gyuho Myeong, Wongil Shin, Seungho Kim, Taehyeok **, Qi Zhang, Kyunghwan Sung, Kenji Watanabe, Takashi Taniguchi, Euyheon Hwang, Sungjae Cho

Abstract: Certain layered transition metal dichalcogenides (TMDCs), such as 1T-TaS2, show a rich collection of charge density wave (CDW) phases at different temperatures, and their atomic structures and electron conductions have been widely studied. However, the properties of CDW systems that are integrated with other electronic materials have not yet been investigated. Here, we incorporate the CDW properti… ▽ More Certain layered transition metal dichalcogenides (TMDCs), such as 1T-TaS2, show a rich collection of charge density wave (CDW) phases at different temperatures, and their atomic structures and electron conductions have been widely studied. However, the properties of CDW systems that are integrated with other electronic materials have not yet been investigated. Here, we incorporate the CDW properties of TMDCs into the electronic transport of graphene for the first time. During CDW phase transitions, anomalous transport behaviors that are closely related to the formation of correlated disorder in TMDCs were observed in the graphene sample used in this study. In particular, the commensurate CDW phase forms a periodic charge distribution with potential fluctuations, and thus constitutes correlated charged impurities, which decreases resistivity and enhances carrier mobility in graphene. The CDW-graphene heterostructure system demonstrated here paves the way to controlling the temperature-dependent carrier mobility and resistivity of graphene and to develo** novel functional electronic devices such as graphene-based sensors and memory devices. △ Less

Submitted 9 October, 2022; v1 submitted 13 January, 2022; originally announced January 2022.

Comments: 17 pages, 4 figures

Quantum readout error mitigation via deep learning

Authors: Jihye Kim, Byungdu Oh, Yonuk Chong, Euyheon Hwang, Daniel K. Park

Abstract: Quantum computing devices are inevitably subject to errors. To leverage quantum technologies for computational benefits in practical applications, quantum algorithms and protocols must be implemented reliably under noise and imperfections. Since noise and imperfections limit the size of quantum circuits that can be realized on a quantum device, develo** quantum error mitigation techniques that d… ▽ More Quantum computing devices are inevitably subject to errors. To leverage quantum technologies for computational benefits in practical applications, quantum algorithms and protocols must be implemented reliably under noise and imperfections. Since noise and imperfections limit the size of quantum circuits that can be realized on a quantum device, develo** quantum error mitigation techniques that do not require extra qubits and gates is of critical importance. In this work, we present a deep learning-based protocol for reducing readout errors on quantum hardware. Our technique is based on training an artificial neural network with the measurement results obtained from experiments with simple quantum circuits consisting of singe-qubit gates only. With the neural network and deep learning, non-linear noise can be corrected, which is not possible with the existing linear inversion methods. The advantage of our method against the existing methods is demonstrated through quantum readout error mitigation experiments performed on IBM five-qubit quantum devices. △ Less

Submitted 7 December, 2021; originally announced December 2021.

Comments: 10 pages, 10 figures

Journal ref: New Journal of Physics 24 073009 (2022)

Dynamical Screening Effects on Big Bang Nucleosynthesis

Authors: Eunseok Hwang, Dukjae Jang, Kiwan Park, Motohiko Kusakabe, Toshitaka Ka**o, A. Baha Balantekin, Tomoyuki Maruyama, Chang-Mo Ryu, Myung-Ki Cheoun

Abstract: A moving ion in plasma creates a deformed electric potential depending on the ion velocity, which leads to the distinct screening effect compared to the standard static Salpeter formula. In this paper, adopting the test charge method, we explore the dynamical screening effects on big bang nucleosynthesis (BBN). We find that the high temperature in the early universe causes the ion velocity to be f… ▽ More A moving ion in plasma creates a deformed electric potential depending on the ion velocity, which leads to the distinct screening effect compared to the standard static Salpeter formula. In this paper, adopting the test charge method, we explore the dynamical screening effects on big bang nucleosynthesis (BBN). We find that the high temperature in the early universe causes the ion velocity to be faster than the solar condition so that the electric potential is effectively polarized. However, the low density of background plasma components significantly suppresses the dynamical screening effects on thermonuclear reaction rates during the BBN epoch. We compare our results with several thermonuclear reaction rates for solar fusion considering the dynamical screening effects. Also, we discuss the additional plasma properties in other astrophysical sites for the possible expansion from the present calculation in the future. △ Less

Submitted 8 November, 2021; v1 submitted 19 February, 2021; originally announced February 2021.

Journal ref: Eunseok Hwang et al JCAP11(2021)017

Infrared spectroscopic study of carrier scattering in gated CVD graphene

Authors: Kwangnam Yu, Jiho Kim, Joo Youn Kim, Wonki Lee, Jun Yeon Hwang, E. H. Hwang, E. J. Choi

Abstract: We measured Drude absorption of gated CVD graphene using far-infrared transmission spectroscopy, and determined carrier scattering rate (g) as function of the varied carrier density (n). The n-dependent g(n) was obtained for a series of conditions systematically changed as (10 K, vacuum) -> (300 K, vacuum) -> (300 K, ambient pressure), which reveals that (1) at low-T, charged impurity (=A/sqrt(n))… ▽ More We measured Drude absorption of gated CVD graphene using far-infrared transmission spectroscopy, and determined carrier scattering rate (g) as function of the varied carrier density (n). The n-dependent g(n) was obtained for a series of conditions systematically changed as (10 K, vacuum) -> (300 K, vacuum) -> (300 K, ambient pressure), which reveals that (1) at low-T, charged impurity (=A/sqrt(n)) and short-range defect (=B*sqrt(n)) are the major scattering sources which constitute the total scattering g=A/sqrt(n)+B*sqrt(n), (2) among various kinds of phonons populated at room-T, surface polar phonon of the SiO2 substrate is the dominantly scattering source, (3) in air, the gas molecules adsorbed on graphene play a dual role in carrier scattering as charged impurity center and resonant scattering center. We present the absolute scattering strengths of those individual scattering sources, which provides the complete map of scattering mechanism of CVD graphene for the first time. This scattering map allows us find out practical measures to suppress the individual scatterings, the mobility gains accompanied by them, and finally the ultimate attainable carrier mobility for CVD graphene. △ Less

Submitted 6 November, 2019; originally announced November 2019.

Comments: 14 pages, 6 figures

Journal ref: Phys. Rev. B, 94, 235404 (2016)

Interdependency between the Stock Market and Financial News

Authors: EunJeong Hwang, Yong-Hyuk Kim

Abstract: Stock prices are driven by various factors. In particular, many individual investors who have relatively little financial knowledge rely heavily on the information from news stories when making investment decisions in the stock market. However, these stories may not reflect future stock prices because of the subjectivity in the news; stock prices may instead affect the news contents. This study ai… ▽ More Stock prices are driven by various factors. In particular, many individual investors who have relatively little financial knowledge rely heavily on the information from news stories when making investment decisions in the stock market. However, these stories may not reflect future stock prices because of the subjectivity in the news; stock prices may instead affect the news contents. This study aims to discover whether it is news or stock prices that have a greater impact on the other. To achieve this, we analyze the relationship between news sentiment and stock prices based on time series analysis using five different classification models. Our experimental results show that stock prices have a bigger impact on the news contents than news does on stock prices. △ Less

Submitted 1 September, 2019; originally announced September 2019.

Comments: 4 pages

MSC Class: 68P20

Impurity scattering induced carrier transport in twisted bilayer graphene

Authors: E. H. Hwang, S. Das Sarma

Abstract: We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperature, both long-ranged Coulomb scattering and short-ranged defect scattering within a Boltzmann theory relaxation time approach. For experimentally rele… ▽ More We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperature, both long-ranged Coulomb scattering and short-ranged defect scattering within a Boltzmann theory relaxation time approach. For experimentally relevant disorder, impurity scattering contributes a resistivity comparable to (much larger than) the phonon scattering contribution at high (low) temperatures. Decreasing twist angle leads to larger resistivity, and in general, the resistivity increases (decreases) with increasing temperature (carrier density). Inclusion of the van Hove singularity in the theory leads to a strong increase in the resistivity at higher densities, where the chemical potential is close to a van Hove singularity, leading to an apparent density-dependent plateau type structure in the resistivity, which has been observed in recent transport experiments. We also show that the Matthissen's rule is strongly violated in twisted bilayer graphene at low twist angles. △ Less

Submitted 20 March, 2020; v1 submitted 5 July, 2019; originally announced July 2019.

Comments: 7 pages, 6 figures (Expanded version for publication)

Journal ref: Phys. Rev. Research 2, 013342 (2020)

Deep Neural Networks Improve Radiologists' Performance in Breast Cancer Screening

Authors: Nan Wu, Jason Phang, Jungkyu Park, Yiqiu Shen, Zhe Huang, Masha Zorin, Stanisław Jastrzębski, Thibault Févry, Joe Katsnelson, Eric Kim, Stacey Wolfson, Ujas Parikh, Sushma Gaddam, Leng Leng Young Lin, Kara Ho, Joshua D. Weinstein, Beatriu Reig, Yiming Gao, Hildegard Toth, Kristine Pysarenko, Alana Lewin, Jiyon Lee, Krystal Airola, Eralda Mema, Stephanie Chung , et al. (7 additional authors not shown)

Abstract: We present a deep convolutional neural network for breast cancer screening exam classification, trained and evaluated on over 200,000 exams (over 1,000,000 images). Our network achieves an AUC of 0.895 in predicting whether there is a cancer in the breast, when tested on the screening population. We attribute the high accuracy of our model to a two-stage training procedure, which allows us to use… ▽ More We present a deep convolutional neural network for breast cancer screening exam classification, trained and evaluated on over 200,000 exams (over 1,000,000 images). Our network achieves an AUC of 0.895 in predicting whether there is a cancer in the breast, when tested on the screening population. We attribute the high accuracy of our model to a two-stage training procedure, which allows us to use a very high-capacity patch-level network to learn from pixel-level labels alongside a network learning from macroscopic breast-level labels. To validate our model, we conducted a reader study with 14 readers, each reading 720 screening mammogram exams, and find our model to be as accurate as experienced radiologists when presented with the same data. Finally, we show that a hybrid model, averaging probability of malignancy predicted by a radiologist with a prediction of our neural network, is more accurate than either of the two separately. To better understand our results, we conduct a thorough analysis of our network's performance on different subpopulations of the screening population, model design, training procedure, errors, and properties of its internal representations. △ Less

Submitted 19 March, 2019; originally announced March 2019.

Comments: MIDL 2019 [arXiv:1907.08612]

Report number: MIDL/2019/ExtendedAbstract/SkxYez76FE

Linear-in-T resistivity in dilute metals: A Fermi liquid perspective

Authors: E. H. Hwang, S. Das Sarma

Abstract: We consider a short-range deformation potential scattering model of electron-acoustic phonon interaction to calculate the resistivity of an ideal metal as a function of temperature (T) and electron density (n). We consider both 3D metals and 2D metals, and focus on the dilute limit, i.e., low effective metallic carrier density of the system. The main findings are: (1) a phonon scattering induced l… ▽ More We consider a short-range deformation potential scattering model of electron-acoustic phonon interaction to calculate the resistivity of an ideal metal as a function of temperature (T) and electron density (n). We consider both 3D metals and 2D metals, and focus on the dilute limit, i.e., low effective metallic carrier density of the system. The main findings are: (1) a phonon scattering induced linear-in-T resistivity could persist to arbitrarily low T in the dilute limit independent of the Debye temperature ($T_D$) although eventually the low-T resistivity turns over to the expected Bloch-Gruneisen (BG) behavior with $T^5$ ($T^4$) dependence, in 3D (2D) respectively; (2) because of low values of n, the phonon-induced resistivity could be very high in the system; (3) the resistivity shows an intrinsic saturation effect at very high temperatures (for $T>T_D$), and in fact, decreases with increasing T above a high crossover temperature with this crossover being dependent on both $T_D$ and n in a non-universal manner. We also provide high-T linear-in-T resistivity results for 2D and 3D Dirac materials. Our work brings out the universal features of phonon-induced transport in dilute metals, and we comment on possible implications of our results for strange metals, emphasizing that the mere observation of a linear-in-T metallic resistivity at low temperatures or a very high metallic resistivity at high temperatures is not necessarily a reason to invoke an underlying quantum critical strange metal behavior. We discuss the temperature variation of the effective transport scattering rate showing that the scattering rate could be below or above $k_BT$, and in particular, purely coincidentally, the calculated scattering rate happens to be $k_BT$ in normal metals with no implications for the so-called Planckian behavior. △ Less

Submitted 6 February, 2019; v1 submitted 14 November, 2018; originally announced November 2018.

Comments: 20 pages, 11 figures

Journal ref: Phys. Rev. B 99, 085105 (2019)

Phonon-induced giant linear-in-$T$ resistivity in magic angle twisted bilayer graphene: Ordinary strangeness and exotic superconductivity

Authors: Fengcheng Wu, Euyheon Hwang, Sankar Das Sarma

Abstract: We study the effect of electron-acoustic phonon interactions in twisted bilayer graphene on resistivity in the high-temperature transport and superconductivity in the low-temperature phase diagram. We theoretically show that twisted bilayer graphene should have an enhanced and strongly twist-angle dependent linear-in-temperature resistivity in the metallic regime with the resistivity magnitude inc… ▽ More We study the effect of electron-acoustic phonon interactions in twisted bilayer graphene on resistivity in the high-temperature transport and superconductivity in the low-temperature phase diagram. We theoretically show that twisted bilayer graphene should have an enhanced and strongly twist-angle dependent linear-in-temperature resistivity in the metallic regime with the resistivity magnitude increasing as the twist angle approaches the magic angle. The slope of the resistivity versus temperature could approach one hundred ohms per kelvin with a strong angle dependence, but with a rather weak dependence on the carrier density. This higher-temperature density-independent linear-in-$T$ resistivity crosses over to a $T^4$ dependence at a low density-dependent characteristic temperature, becoming unimportant at low temperatures. This angle-tuned resistivity enhancement arises from the huge increase in the effective electron-acoustic phonon coupling in the system due to the suppression of graphene Fermi velocity induced by the flatband condition in the moiré superlattice system. Our calculated temperature dependence is reminiscent of the so-called `strange metal' transport behavior except that it is arising from the ordinary electron-phonon coupling in a rather unusual parameter space due to the generic moiré flatband structure of twisted bilayer graphene. We also show that the same enhanced electron-acoustic phonon coupling also mediates effective attractive interactions in $s$, $p$, $d$ and $f$ pairing channels with a theoretical superconducting transition temperature on the order of $\sim$5 K near magic angle. The fact that ordinary acoustic phonons can produce exotic non-$s$-wave superconducting pairing arises from the unusual symmetries of the system. △ Less

Submitted 30 March, 2019; v1 submitted 12 November, 2018; originally announced November 2018.

Comments: 15 pages, 8 figures. Expanded final version with a modified title as accepted for publication in PRB

Journal ref: Phys. Rev. B 99, 165112 (2019)

Plasmon-pole approximation for many-body-effects in extrinsic graphene

Authors: E. H. Hwang, Robert E. Throckmorton, S. Das Sarma

Abstract: We develop the plasmon-pole approximation (PPA) theory for calculating the carrier self-energy of extrinsic graphene as a function of do** density within analytical approximations to the $GW$ random phase approximation ($GW$-RPA). Our calculated self-energy shows excellent quantitative agreement with the corresponding full $GW$-RPA calculation results in spite of the simplicity of the PPA, estab… ▽ More We develop the plasmon-pole approximation (PPA) theory for calculating the carrier self-energy of extrinsic graphene as a function of do** density within analytical approximations to the $GW$ random phase approximation ($GW$-RPA). Our calculated self-energy shows excellent quantitative agreement with the corresponding full $GW$-RPA calculation results in spite of the simplicity of the PPA, establishing the general validity of the plasmon-pole approximation scheme. We also provide a comparison between the PPA and the hydrodynamic approximation in graphene, and comment on the experimental implications of our findings. △ Less

Submitted 30 November, 2018; v1 submitted 7 August, 2018; originally announced August 2018.

Comments: 13 pages, 9 figures. Expanded discussions of the use of PPA as a numerical approximation compared with other approximations and clarified that we are develo** an analytical approximation for graphene. Combined Figs. 2-5 into a single figure. Published in Phys. Rev. B; this is the published version

Journal ref: Phys. Rev. B 98, 195140 (2018)

Real-Time Shape Tracking of Facial Landmarks

Authors: Hyungjoon Kim, Hyeonwoo Kim, Eenjun Hwang

Abstract: Detection of facial landmarks and accurate tracking of their shape are essential in real-time virtual makeup applications, where users can see the makeups effect by moving their face in different directions. Typical face tracking techniques detect diverse facial landmarks and track them using a point tracker such as the Kanade-Lucas-Tomasi (KLT) point tracker. Typically, 5 or 64 points are used fo… ▽ More Detection of facial landmarks and accurate tracking of their shape are essential in real-time virtual makeup applications, where users can see the makeups effect by moving their face in different directions. Typical face tracking techniques detect diverse facial landmarks and track them using a point tracker such as the Kanade-Lucas-Tomasi (KLT) point tracker. Typically, 5 or 64 points are used for tracking a face. Even though these points are sufficient to track the approximate locations of facial landmarks, they are not sufficient to track the exact shape of facial landmarks. In this paper, we propose a method that can track the exact shape of facial landmarks in real-time by combining a deep learning technique and a point tracker. We detect facial landmarks accurately using SegNet, which performs semantic segmentation based on deep learning. Edge points of detected landmarks are tracked using the KLT point tracker. In spite of its popularity, the KLT point tracker suffers from the point loss problem. We solve this problem by executing SegNet periodically to calculate the shape of facial landmarks. That is, by combining the two techniques, we can avoid the computational overhead of SegNet for real-time shape tracking and the point loss problem of the KLT point tracker. We performed several experiments to evaluate the performance of our method and report some of the results herein. △ Less

Submitted 14 July, 2018; originally announced July 2018.

Comments: 8 pages

MSC Class: eess.IV - Image and Video Processing

Diluted magnetic Dirac-Weyl materials: Susceptibility and ferromagnetism in three-dimensional chiral gapless semimetals

Authors: Sanghyun Park, Hongki Min, E. H. Hwang, S. Das Sarma

Abstract: We theoretically investigate the temperature-dependent static susceptibility and long-range magnetic coupling of three-dimensional (3D) chiral gapless electron-hole systems (semimetals) with arbitrary band dispersion [i.e., $\varepsilon(k) \sim k^N$, where $k$ is the wave vector and $N$ is a positive integer]. We study the magnetic properties of these systems in the presence of dilute random magne… ▽ More We theoretically investigate the temperature-dependent static susceptibility and long-range magnetic coupling of three-dimensional (3D) chiral gapless electron-hole systems (semimetals) with arbitrary band dispersion [i.e., $\varepsilon(k) \sim k^N$, where $k$ is the wave vector and $N$ is a positive integer]. We study the magnetic properties of these systems in the presence of dilute random magnetic impurities. Assuming carrier-mediated Ruderman-Kittel-Kasuya-Yosida indirect exchange interaction, we find that the magnetic ordering of intrinsic 3D chiral semimetals in the presence of dilute magnetic impurities is ferromagnetic for all values of $N$. Using finite-temperature self-consistent field approximation, we calculate the ferromagnetic transition temperature ($T_{\rm c}$). We find that $T_{\rm c}$ increases with increasing $N$ due to the enhanced density of states, and the calculated $T_{\rm c}$ is experimentally accessible assuming reasonable coupling between the magnetic impurities and itinerant carriers. △ Less

Submitted 29 August, 2018; v1 submitted 28 April, 2018; originally announced April 2018.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 98, 064425 (2018)

Dimensionally mixed coupled collective modes

Authors: E. H. Hwang, Ben Yu-Kuang Hu, S. Das Sarma

Abstract: We develop the diagrammatic formulation of the many-body theory for the coupled collective modes in interacting electron systems of different dimensions. The formalism is then applied in detail to a two-dimensional system coupled to a three-dimensional electron gas. We find two dimensionally-mixed plasmon modes which in the long wavelength limit are respectively 3D-like and acoustic in nature, but… ▽ More We develop the diagrammatic formulation of the many-body theory for the coupled collective modes in interacting electron systems of different dimensions. The formalism is then applied in detail to a two-dimensional system coupled to a three-dimensional electron gas. We find two dimensionally-mixed plasmon modes which in the long wavelength limit are respectively 3D-like and acoustic in nature, but are strongly coupled at larger wave vectors. The same formalism can be applied to any dimensional combinations, and we also present the results for 1D-2D and 1D-3D coupled systems. △ Less

Submitted 11 April, 2018; originally announced April 2018.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 98, 161304 (2018)

Deep learning analysis of breast MRIs for prediction of occult invasive disease in ductal carcinoma in situ

Authors: Zhe Zhu, Michael Harowicz, Jun Zhang, Ashirbani Saha, Lars J. Grimm, E. Shelley Hwang, Maciej A. Mazurowski

Abstract: Purpose: To determine whether deep learning-based algorithms applied to breast MR images can aid in the prediction of occult invasive disease following the di- agnosis of ductal carcinoma in situ (DCIS) by core needle biopsy. Material and Methods: In this institutional review board-approved study, we analyzed dynamic contrast-enhanced fat-saturated T1-weighted MRI sequences of 131 patients at our… ▽ More Purpose: To determine whether deep learning-based algorithms applied to breast MR images can aid in the prediction of occult invasive disease following the di- agnosis of ductal carcinoma in situ (DCIS) by core needle biopsy. Material and Methods: In this institutional review board-approved study, we analyzed dynamic contrast-enhanced fat-saturated T1-weighted MRI sequences of 131 patients at our institution with a core needle biopsy-confirmed diagnosis of DCIS. The patients had no preoperative therapy before breast MRI and no prior history of breast cancer. We explored two different deep learning approaches to predict whether there was a hidden (occult) invasive component in the analyzed tumors that was ultimately detected at surgical excision. In the first approach, we adopted the transfer learning strategy, in which a network pre-trained on a large dataset of natural images is fine-tuned with our DCIS images. Specifically, we used the GoogleNet model pre-trained on the ImageNet dataset. In the second approach, we used a pre-trained network to extract deep features, and a support vector machine (SVM) that utilizes these features to predict the upstaging of the DCIS. We used 10-fold cross validation and the area under the ROC curve (AUC) to estimate the performance of the predictive models. Results: The best classification performance was obtained using the deep features approach with GoogleNet model pre-trained on ImageNet as the feature extractor and a polynomial kernel SVM used as the classifier (AUC = 0.70, 95% CI: 0.58- 0.79). For the transfer learning based approach, the highest AUC obtained was 0.53 (95% CI: 0.41-0.62). Conclusion: Convolutional neural networks could potentially be used to identify occult invasive disease in patients diagnosed with DCIS at the initial core needle biopsy. △ Less

Submitted 28 November, 2017; originally announced November 2017.

Carrier and strain tunable intrinsic magnetism in two-dimensional MAX$_3$ transition metal chalcogenides

Authors: Bheema Lingam Chittari, Dongkyu Lee, Allan H. MacDonald, Euyheon Hwang, Jeil Jung

Abstract: We present a density functional theory study of the carrier-density and strain dependence of magnetic order in two-dimensional (2D) MAX$_3$ (M= V, Cr, Mn, Fe, Co, Ni; A= Si, Ge, Sn, and X= S, Se, Te) transition metal trichalcogenides. Our {\em ab initio} calculations show that this class of compounds includes wide and narrow gap semiconductors and metals and half-metals, and that most of these com… ▽ More We present a density functional theory study of the carrier-density and strain dependence of magnetic order in two-dimensional (2D) MAX$_3$ (M= V, Cr, Mn, Fe, Co, Ni; A= Si, Ge, Sn, and X= S, Se, Te) transition metal trichalcogenides. Our {\em ab initio} calculations show that this class of compounds includes wide and narrow gap semiconductors and metals and half-metals, and that most of these compounds are magnetic. Although antiferromagnetic order is most common, ferromagnetism is predicted in MSiSe$_3$ for M= Mn, Ni, in MSiTe$_3$ for M= V, Ni, in MnGeSe$_3$, in MGeTe$_3$ for M=Cr, Mn, Ni, in FeSnS$_3$, and in MSnTe$_3$ for M= V, Mn, Fe. Among these compounds CrGeTe$_3$ and VSnTe$_3$ are ferromagnetic semiconductors. Our calculations suggest that the competition between antiferromagnetic and ferromagnetic order can be substantially altered by strain engineering, and in the semiconductor case also by gating. The associated critical temperatures can be substantially enhanced by means of carrier do** and strains. △ Less

Submitted 27 September, 2017; originally announced September 2017.

Comments: 15 pages, 9 figures, 2 tables + supplemental material. In total 36 pages, 25 figures and 7 tables. arXiv admin note: text overlap with arXiv:1604.06445

Journal ref: Phys. Rev. B 101, 085415 (2020)

Ferromagnetism in chiral multilayer 2D semimetals

Authors: Hongki Min, E. H. Hwang, S. Das Sarma

Abstract: We calculate the temperature dependent long-range magnetic coupling in the presence of dilute concentrations of random magnetic impurities in chiral multilayer two-dimensional semimetals, i.e., undoped intrinsic multilayer graphene. Assuming a carrier-mediated indirect RKKY exchange interaction among the well-separated magnetic impurities with the itinerant carriers mediating the magnetic interact… ▽ More We calculate the temperature dependent long-range magnetic coupling in the presence of dilute concentrations of random magnetic impurities in chiral multilayer two-dimensional semimetals, i.e., undoped intrinsic multilayer graphene. Assuming a carrier-mediated indirect RKKY exchange interaction among the well-separated magnetic impurities with the itinerant carriers mediating the magnetic interaction between the impurities, we investigate the magnetic properties of intrinsic multilayer graphene using an effective chiral Hamiltonian model. We find that due to the enhanced density of states in the rhombohedral stacking sequence of graphene layers, the magnetic ordering of multilayer graphene is ferromagnetic in the continuum limit. The ferromagnetic transition temperature is calculated using a finite-temperature self-consistent field approximation and found to be within the experimentally accessible range for reasonable values of the impurity-carrier coupling. △ Less

Submitted 6 February, 2017; originally announced February 2017.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 95, 155414 (2017)

Large negative transconductance in multilayer graphene: The role of intersubband scattering

Authors: Seungchan Woo, E. H. Hwang, Hongki Min

Abstract: We calculate the transport properties of multilayer graphene, considering the effect of multisubband scattering in a high density regime, where higher subbands are occupied by charge carriers. To calculate the conductivity of multilayer graphene, we use the coupled multiband Boltzmann transport theory while fully incorporating the multiband scattering effects. We show that the allowed scattering c… ▽ More We calculate the transport properties of multilayer graphene, considering the effect of multisubband scattering in a high density regime, where higher subbands are occupied by charge carriers. To calculate the conductivity of multilayer graphene, we use the coupled multiband Boltzmann transport theory while fully incorporating the multiband scattering effects. We show that the allowed scattering channels, screening effects, chiral nature of the electronic structure, and type of impurity scatterings determine the transport behavior of multilayer graphene. We find that the conductivity of multilayer graphene shows a sudden change when the carriers begin to occupy the higher subbands, and therefore a large negative transconductance (NTC) appears as the carrier density varies. These phenomena arise mostly from the intersubband scattering and the change in the density of states at the band touching density. Based on our results, it is possible to build novel devices utilizing the large NTC in multilayer graphene. △ Less

Submitted 11 May, 2017; v1 submitted 22 October, 2016; originally announced October 2016.

Comments: 8 pages, 5 figures

Journal ref: 2D Materials 4, 025090 (2017)

Electronic and magnetic properties of single-layer MPX$_3$ metal phosphorous trichalcogenides

Authors: Bheema Lingam Chittari, Youngju Park, Dongkyu Lee, Moonsup Han, Allan H. MacDonald, Euyheon Hwang, Jeil Jung

Abstract: We systematically investigate the electronic structure and magnetic properties of two dimensional (2D) MPX$_3$ (M= V, Cr, Mn, Fe, Co, Ni, Cu, Zn, and X = S, Se, Te) transition metal chacogenophosphates to examine their potential role as single-layer van der Waals materials that exhibit magnetic order. Our {\em ab initio} calculations predict that most of these single-layer materials are antiferrom… ▽ More We systematically investigate the electronic structure and magnetic properties of two dimensional (2D) MPX$_3$ (M= V, Cr, Mn, Fe, Co, Ni, Cu, Zn, and X = S, Se, Te) transition metal chacogenophosphates to examine their potential role as single-layer van der Waals materials that exhibit magnetic order. Our {\em ab initio} calculations predict that most of these single-layer materials are antiferromagnetic semiconductors. The band gaps of the antiferromagnetic states decrease as the atomic number of the chalcogen atom increases (from S to Se, Te), leading in some cases to half-metallic ferromagnetic states or to non-magnetic metallic states. We find that the phase transition from antiferromagnetic semiconductor to ferromagnetic half-metal can be controlled by gating or by strain engineering. The sensitive interdependence we find between magnetic, structural, and electronic properties establishes the potential of this 2D materials class for applications in spintronics. △ Less

Submitted 28 September, 2017; v1 submitted 21 April, 2016; originally announced April 2016.

Comments: Published manuscript with supplementary information. 16 pages 8 figures and 4 tables for the main text. 33 pages 20 figures 8 tables in total

Journal ref: Phys. Rev. B 94, 184428 (2016)

Collective modes in multi-Weyl semimetals

Authors: Seong** Ahn, E. H. Hwang, Hongki Min

Abstract: We investigate collective modes in three dimensional (3D) gapless multi-Weyl semimetals with anisotropic energy band dispersions (i.e., $E\sim \sqrt{ k_{\parallel}^{2J} + k_z^2}$, where $k_{\parallel}$ and $k_z$ are wave vectors and $J$ is a positive integer). For comparison, we also consider the gapless semimetals with the isotropic band dispersions (i.e., $E\sim k^J$). We calculate analytically… ▽ More We investigate collective modes in three dimensional (3D) gapless multi-Weyl semimetals with anisotropic energy band dispersions (i.e., $E\sim \sqrt{ k_{\parallel}^{2J} + k_z^2}$, where $k_{\parallel}$ and $k_z$ are wave vectors and $J$ is a positive integer). For comparison, we also consider the gapless semimetals with the isotropic band dispersions (i.e., $E\sim k^J$). We calculate analytically long-wavelength plasma frequencies incorporating interband transitions and chiral properties of carriers. For both the isotropic and anisotropic cases, we find that interband transitions and chirality lead to the depolarization shift of plasma frequencies. For the isotropic parabolic band dispersion (i.e., $N=2$, $E\sim k^2$), the long-wavelength plasma frequencies lie outside the single particle excitation regions for all carrier densities, and thus the plasmons do not decay via Landau dam**. For the higher-order band dispersions ($N \ge 3$) the long-wavelength plasmons experience dam** below a critical density. For systems with the anisotropic dispersion the density dependence of the long-wavelength plasma frequency along the direction of non-linear dispersion behaves like that of the isotropic linear band model ($N=1$), while along the direction of linear dispersion it behaves like that of the isotropic non-linear model ($N \ge 2$). Plasmons along both directions remain undamped over a broad range of densities due to the chirality induced depolarization shift. Our results provide a comprehensive picture of how band dispersion and chirality affect plasmon behaviors in 3D gapless chiral systems with the arbitrary band dispersion. △ Less

Submitted 30 September, 2016; v1 submitted 11 April, 2016; originally announced April 2016.

Comments: 10 pages, 4 figures

Journal ref: Scientific Reports 6, 34023 (2016)

Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors

Authors: Junmo Kang, Deep Jariwala, Christopher R. Ryder, Spencer A. Wells, Yongsuk Choi, Euyheon Hwang, Jeong Ho Cho, Tobin J. Marks, Mark C. Hersam

Abstract: Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as MoS2. To date, BP field-effect transistors have utilized a lateral geometry with in-plane transport dominating device characteristics. In contrast, we present here… ▽ More Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as MoS2. To date, BP field-effect transistors have utilized a lateral geometry with in-plane transport dominating device characteristics. In contrast, we present here a vertical field-effect transistor geometry based on a graphene/BP van der Waals heterostructure. The resulting device characteristics include high on-state current densities (> 1600 A/cm2) and current on/off ratios exceeding 800 at low temperature. Two distinct charge transport mechanisms are identified, which are dominant for different regimes of temperature and gate voltage. In particular, the Schottky barrier between graphene and BP determines charge transport at high temperatures and positive gate voltages, whereas tunneling dominates at low temperatures and negative gate voltages. These results elucidate out-of-plane electronic transport in BP, and thus have implications for the design and operation of BP-based van der Waals heterostructures. △ Less

Submitted 13 March, 2016; originally announced March 2016.

Comments: 4 figures and supporting information, Published in Nano Letters (2016)

Superconductivity at 7.4 K in Few Layer Graphene by Li-intercalation

Authors: Anand P. Tiwari, Soohyeon Shin, Eunhee Hwang, Soon-Gil Jung, Tuson Park, Hyoyoung Lee

Abstract: Superconductivity in graphene has been highly sought after for its promise in various device applications and for general scientific interest. Ironically, the simple electronic structure of graphene, which is responsible for novel quantum phenomena, hinders the emergence of superconductivity. Theory predicts that do** the surface of the graphene effectively alters the electronic structure, thus… ▽ More Superconductivity in graphene has been highly sought after for its promise in various device applications and for general scientific interest. Ironically, the simple electronic structure of graphene, which is responsible for novel quantum phenomena, hinders the emergence of superconductivity. Theory predicts that do** the surface of the graphene effectively alters the electronic structure, thus promoting propensity towards Cooper pair instability. Here we report the emergence of superconductivity at 7.4 K in Li-intercalated few-layer-graphene (FLG). The absence of superconductivity in three-dimensional Li-doped graphite underlines that superconductivity in Li-FLG arises from the novel electronic properties of the two-dimensional graphene layer. These results are expected to guide future research on graphene-based superconductivity, both in theory and experiments. In addition, easy control of the Li-do** process holds promise for various device applications. △ Less

Submitted 26 August, 2015; v1 submitted 26 August, 2015; originally announced August 2015.

Comments: 24 pages

Electrical Control of Broadband Terahertz Wave Transmission with Two-Terminal Graphene Oxide Devices

Authors: Seungwoo Lee, Kyung Eun Lee, Won Jun Lee, Byung Cheol Park, Byungsoo Kang, Euyheon Hwang, Sang Ouk Kim

Abstract: Carbon nanomaterials such as carbon nanotubes and graphene have proved to be efficient building blocks for active optoelectronic devices. Especially, the exotic properties of crystalline graphene, such as a linear/gapless energy dispersion, offer a generic route to the development of active photonic modulator at the infrared (IR) and terahertz (THz) regime with large modulation depth. Here, we sho… ▽ More Carbon nanomaterials such as carbon nanotubes and graphene have proved to be efficient building blocks for active optoelectronic devices. Especially, the exotic properties of crystalline graphene, such as a linear/gapless energy dispersion, offer a generic route to the development of active photonic modulator at the infrared (IR) and terahertz (THz) regime with large modulation depth. Here, we show that graphene oxide (GO), an oxygenated derivative of graphene with randomly distributed molecular defects (e.g., adsorbed water molecules and punched holes), can provide a different way to effectively control broadband THz transmission amplitude, when incorporated into two-terminal electrode devices. Electrically trapped charge carriers within localized impurity states (LIS) of GO, which originate from fully randomized defective structure of GO, results in a large modulation of transmission amplitude (~30%) for broadband THz waves (0.3 ~ 2.0 THz) even at room temperature. Interesting hysteretic behavior observed in the control of broadband THz transmission further confirms the key role of trapped charge carriers in switching of broadband THz waves. The device architecture constructed by simple solution printing of GO onto the two-terminal electrode enables easy-to-implement active photonic devices. △ Less

Submitted 12 August, 2015; originally announced August 2015.

Screening and transport in 2D semiconductor systems at low temperatures

Authors: S. Das Sarma, E. H. Hwang

Abstract: Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder arising from random quenched charged impurities in the environment. In the current work, we derive a number of simple analytical formula, supported by realistic num… ▽ More Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder arising from random quenched charged impurities in the environment. In the current work, we derive a number of simple analytical formula, supported by realistic numerical calculations, for the relevant density, mobility, and temperature range where 2D transport should manifest strong intrinsic (i.e., arising purely from electronic effects and not from phonon scattering) metallic temperature dependence in different semiconductor materials arising entirely from the 2D screening properties, thus providing an explanation for why the strong temperature dependence of the 2D resistivity can only be observed in high-quality and low-disorder (i.e., high-mobility) 2D samples and also why some high-quality 2D materials (i.e., n-GaAs) manifest much weaker metallicity than other materials. We also discuss effects of interaction and disorder on the 2D screening properties in this context as well as compare 2D and 3D screening functions to comment why such a strong intrinsic temperature dependence arising from screening cannot occur in 3D metallic carrier transport. Experimentally verifiable predictions are made about the quantitative magnitude of the maximum possible low-temperature metallicity in 2D systems and the scaling behavior of the temperature scale controlling the quantum to classical crossover where the system reverses the sign of the temperature derivative of the 2D resistivity at high temperatures. △ Less

Submitted 5 August, 2015; originally announced August 2015.

Comments: 17 pages and 8 figures. arXiv admin note: substantial text overlap with arXiv:1401.4762

Journal ref: Scientific Reports 5, 16655 (2015)

Stacking dependence of carrier-interactions in multilayer graphene systems

Authors: Yunsu Jang, E. H. Hwang, A. H. MacDonald, Hongki Min

Abstract: We identify qualitative trends in the stacking sequence dependence of carrier-carrier interaction phenomena in multilayer graphene. Our theory is based on a new approach which explicitly exhibits the important role in interaction phenomena of the momentum-direction dependent intersite phases determined by the stacking sequence. Using this method, we calculate and compare the self-energies, density… ▽ More We identify qualitative trends in the stacking sequence dependence of carrier-carrier interaction phenomena in multilayer graphene. Our theory is based on a new approach which explicitly exhibits the important role in interaction phenomena of the momentum-direction dependent intersite phases determined by the stacking sequence. Using this method, we calculate and compare the self-energies, density--density response functions, collective modes, and ground-state energies of several different few layer graphene systems. The influence of electron--electron interactions on important electronic properties can be understood in terms of competition between intraband exchange, interband exchange and correlation contributions that vary systematically with stacking arrangement. △ Less

Submitted 28 September, 2016; v1 submitted 28 February, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 92, 041411 (2015)

Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor

Authors: Binhui Hu, M. M. Yazdanpanah, B. E. Kane, E. H. Hwang, S. Das Sarma

Abstract: We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune the system from being a 2D electron system at positive gate voltage to a 2D hole system at negative gate voltage. The electron (hole) conductivity manifests str… ▽ More We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune the system from being a 2D electron system at positive gate voltage to a 2D hole system at negative gate voltage. The electron (hole) conductivity manifests strong (moderate) metallic temperature dependence with the conductivity decreasing by a factor of 8 (2) between 0.3 K and 4.2 K with the peak electron mobility ($\sim 18$ m$^2$/Vs) being roughly 20 times larger than the peak hole mobility (in the same sample). Our theory explains the data well using RPA screening of background Coulomb disorder, establishing that the observed metallicity is a direct consequence of the strong temperature dependence of the effective screened disorder. △ Less

Submitted 2 August, 2015; v1 submitted 10 February, 2015; originally announced February 2015.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 115, 036801 (2015)

Charge transport in gapless chiral electron systems with arbitrary band dispersion

Authors: S. Das Sarma, E. H. Hwang

Abstract: Using the semiclassical Boltzmann transport theory, we analytically consider dc charge transport in gapless electron-hole (both chiral and non-chiral) systems in the presence of resistive scattering due to static disorder arising from random quenched impurities in the background. We obtain the dependence of the Boltzmann conductivity on carrier density and temperature for arbitrary band dispersion… ▽ More Using the semiclassical Boltzmann transport theory, we analytically consider dc charge transport in gapless electron-hole (both chiral and non-chiral) systems in the presence of resistive scattering due to static disorder arising from random quenched impurities in the background. We obtain the dependence of the Boltzmann conductivity on carrier density and temperature for arbitrary band dispersion in arbitrary dimensionality assuming long-range ($\sim 1/r$) Coulomb disorder and zero-range white noise disorder [$\sim δ(r)$]. We establish that the temperature and the density dependence of the Boltzmann conductivity manifests scaling behaviors determining respectively the intrinsic semimetallic or the extrinsic metallic property of the gapless system. Our results apply equally well to both chiral and non-chiral gapless systems, and provide a qualitative understanding of the dependence of the Boltzmann conductivity on the band dispersion in arbitrary dimensionality. △ Less

Submitted 7 May, 2015; v1 submitted 22 January, 2015; originally announced January 2015.

Comments: 10 pages, 1 figure

Journal ref: Phys. Rev. B 91, 195104 (2015)

Transport in two-dimensional modulation doped semiconductor structures

Authors: S. Das Sarma, E. H. Hwang, S. Kodiyalam, L. N. Pfeiffer, K. W. West

Abstract: We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first order Born scattering by random quenched remote dopant ions… ▽ More We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first order Born scattering by random quenched remote dopant ions as the only scattering mechanism, gives a mobility much lower (by a factor of 3 or more) than that observed experimentally in many ultra high-mobility modulation-doped 2D systems, establishing convincingly that the model of uncorrelated scattering by independent random remote quenched dopant ions is often unable to describe the physical system quantitively. We theoretically establish that the consideration of spatial correlations in the remote dopant distribution can enhance the mobility by (up to) several orders of magnitudes in experimental samples. The precise calculation of the carrier mobility in ultra-pure modulation-doped 2D semiconductor structures thus depends crucially on the unknown spatial correlations among the dopant ions in the do** layer which may manifest sample to sample variations even for nominally identical sample parameters (i.e., density, well width, etc.), depending on the details of the modulation-do** growth conditions. △ Less

Submitted 7 May, 2015; v1 submitted 29 December, 2014; originally announced December 2014.

Comments: 17 pages, 18 figures

Journal ref: Phys. Rev. B 91, 205304 (2015)

Inelastic carrier lifetime in a coupled graphene electron-phonon system: Role of plasmon-phonon coupling

Authors: Seong** Ahn, E. H. Hwang, Hongki Min

Abstract: We calculate the inelastic scattering rates and the hot electron inelastic mean free paths for both monolayer and bilayer graphene on a polar substrate. We study the quasiparticle self-energy by taking into account both electron-electron and electron-surface optical (SO) phonon interactions. In this calculation the leading order dynamic screening approximation (G$_0$W approximation) is used to obt… ▽ More We calculate the inelastic scattering rates and the hot electron inelastic mean free paths for both monolayer and bilayer graphene on a polar substrate. We study the quasiparticle self-energy by taking into account both electron-electron and electron-surface optical (SO) phonon interactions. In this calculation the leading order dynamic screening approximation (G$_0$W approximation) is used to obtain the quasiparticle self-energy by treating electrons and phonons on an equal footing. We find that the strong coupling between the SO phonon and plasmon leads to a new decay channel for the quasiparticle through the emission of the coupled mode, and gives rise to an abrupt increase in the scattering rate, which is absent in the uncoupled system. In monolayer graphene a single jump in the scattering rate occurs, arising from the emission of the low energy branch of the coupled plasmon-phonon modes. In bilayer graphene the emission of both low and high energy branches of the coupled modes contributes to the scattering rate and gives rise to two abrupt changes in the scattering rate. The jumps in the scattering rate can be potentially used in the hot electron device such as switching devices and oscillators. △ Less

Submitted 30 December, 2014; v1 submitted 30 September, 2014; originally announced September 2014.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 90, 245436 (2014)

Carrier screening, transport, and relaxation in 3D Dirac semimetals

Authors: S. Das Sarma, E. H. Hwang, Hongki Min

Abstract: A theory is developed for the density and temperature dependent carrier conductivity in doped three-dimensional (3D) Dirac materials focusing on resistive scattering from screened Coulomb disorder due to random charged impurities (e.g., dopant ions and unintentional background impurities). The theory applies both in the undoped intrinsic ("high-temperature", $T \gg T_F$) and the doped extrinsic ("… ▽ More A theory is developed for the density and temperature dependent carrier conductivity in doped three-dimensional (3D) Dirac materials focusing on resistive scattering from screened Coulomb disorder due to random charged impurities (e.g., dopant ions and unintentional background impurities). The theory applies both in the undoped intrinsic ("high-temperature", $T \gg T_F$) and the doped extrinsic ("low-temperature", $T \ll T_F$) limit with analytical scaling properties for the carrier conductivity obtained in both regimes, where $T_F$ is the Fermi temperature corresponding to the doped free carrier density (electrons or holes). The scaling properties describing how the conductivity depends on the density and temperature can be used to establish the Dirac nature of 3D systems through transport measurements. We also consider the temperature dependent conductivity limited by the acoustic phonon scattering in 3D Dirac materials. In addition, we theoretically calculate and compare the single particle relaxation time $\tas$, defining the quantum level broadening, and the transport scattering time $\tat$, defining the conductivity, in the presence of screened charged impurity scattering. A critical quantitative analysis of the $\tat/\tas$ results for 3D Dirac materials in the presence of long-range screened Coulomb disorder is provided. △ Less

Submitted 2 December, 2014; v1 submitted 3 August, 2014; originally announced August 2014.

Comments: 12 pages, 5 figures, Substantially expanded version with additional results and new contents and with a revised title

Journal ref: Phys. Rev. B 91, 035201 (2015)

Signatures of localization in the effective metallic regime of high mobility Si MOSFETs

Authors: S. Das Sarma, E. H. Hwang, K. Kechedzhi, L. A. Tracy

Abstract: Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections in the effective metallic regime above the critical density of the so-called two-dimensional metal-insulator transition (2D MIT). The goal is to look for the e… ▽ More Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections in the effective metallic regime above the critical density of the so-called two-dimensional metal-insulator transition (2D MIT). The goal is to look for the effect of logarithmic insulating localization correction to the metallic temperature dependence in the 2D conductivity so as to distinguish between the 2D MIT being a true quantum phase transition versus being a finite-temperature crossover. We use the Boltzmann theory of resistivity including the temperature dependent screening effect on charged impurities in the system to fit the data. We analyze weak perpendicluar field magnetoresistance data taken in the vicinity of the transition and show that they are consistent with weak localization behavior in the strongly disordered regime $k_F\ell\gtrsim1$. Therefore we supplement the Botzmann transport theory with a logarithmic in temperature quantum weak localization correction and analyze the competition of the insulating temperature dependence of this correction with the metallic temperature dependence of the Boltzmann conductivity. Using this minimal theoretical model we find that the logarithmic insulating correction is masked by the metallic temperature dependence of the Botzmann resistivity and therefore the insulating $\log T$ behavior may be apparent only at very low temperatures which are often beyond the range of temperatures accessible experimentally. Analyzing the low-$T$ experimental Si MOSFET transport data we identify signatures of the putative insulating behavior at low temperature and density in the effective metallic phase. △ Less

Submitted 15 September, 2014; v1 submitted 11 June, 2014; originally announced June 2014.

Comments: 10 pages,5 figures, published version

Journal ref: Phys. Rev. B 90, 125410 (2014)

Mobility versus quality in 2D semiconductor structures

Authors: S. Das Sarma, E. H. Hwang

Abstract: We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating that the sample mobility is not necessarily a reliable or universal indicator of the sample quality in high-mobility modulation-doped 2D GaAs structures because, depending on the specific system property of interest, mob… ▽ More We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating that the sample mobility is not necessarily a reliable or universal indicator of the sample quality in high-mobility modulation-doped 2D GaAs structures because, depending on the specific system property of interest, mobility and quality may be controlled by different aspects of the underlying disorder distribution, particularly since these systems are dominated by long-range Coulomb disorder from both near and far random quenched charged impurities. We show that in the presence of both channel and remote charged impurity scattering, which is a generic situation in modulation-doped high-mobility 2D carrier systems, it is quite possible for higher (lower) mobility structures to have lower (higher) quality as measured by the disorder-induced single-particle level broadening. In particular, we establish that there is no reason to expect a unique relationship between mobility and quality in 2D semiconductor structures as both are independent functionals of the disorder distribution, and are therefore, in principle, independent of each other. Using a simple, but reasonably realistic, ``2-impurity'' minimal model of the disorder distribution, we provide concrete examples of situations where higher (lower) mobilities correspond to lower (higher) sample qualities. We discuss experimental implications of our theoretical results and comment on possible strategies for future improvement of 2D sample quality. △ Less

Submitted 17 March, 2014; originally announced March 2014.

Comments: 20 pages, 17 figures

Journal ref: Phys. Rev. B 90, 035425 (2014)

Effective field theory, three-loop perturbative expansion, and their experimental implications in graphene many-body effects

Authors: Edwin Barnes, E. H. Hwang, R. E. Throckmorton, S. Das Sarma

Abstract: Many-body electron-electron interaction effects are theoretically considered in monolayer graphene from a continuum effective field-theoretic perspective by going beyond the standard leading-order perturbative renormalization group (RG) analysis. Given that the bare fine structure constant in graphene is of order unity, which is neither small to justify a perturbative expansion nor large enough fo… ▽ More Many-body electron-electron interaction effects are theoretically considered in monolayer graphene from a continuum effective field-theoretic perspective by going beyond the standard leading-order perturbative renormalization group (RG) analysis. Given that the bare fine structure constant in graphene is of order unity, which is neither small to justify a perturbative expansion nor large enough for strong-coupling theories to be applicable, the problem is a difficult one, with some similarity to 2+1-dimensional strong-coupling quantum electrodynamics (QED). In this work, we take a systematic and comprehensive analytical approach, working primarily at the Dirac point (intrinsic graphene), by going up to three loops in the diagrammatic expansion to both ascertain the validity of perturbation theory and to estimate quantitatively higher-order renormalization effects. While no direct signatures for non-Fermi liquid behavior at the Dirac point have yet been observed experimentally, there is ample evidence for the interaction-induced renormalization of the graphene velocity as the carrier density approaches zero. We provide a critical comparison between theory and experiment, using both bare- and screened-interaction (RPA) calculations. We find that while the one-loop RG analysis gives reasonable agreement with the experimental data, especially when screening and finite-density effects are included through the RPA, the two-loop analysis reveals a strong-coupling critical point in suspended graphene, signifying either a quantum phase transition or a breakdown of the weak-coupling RG approach. We show that the latter is more likely by adapting Dyson's argument for the breakdown of perturbative QED to the case of graphene. We propose future experiments and theoretical directions to make further progress on this important and difficult problem. △ Less

Submitted 30 June, 2014; v1 submitted 27 January, 2014; originally announced January 2014.

Comments: 60 pages, 28 figures, PRB version

Journal ref: Phys. Rev. B 89, 235431 (2014)

The 2D metal-insulator transition as a strong localization induced crossover phenomenon

Authors: S. Das Sarma, E. H. Hwang

Abstract: Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. dρ/dT changes its sign at some nonuniversal sample-dependent critica… ▽ More Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. dρ/dT changes its sign at some nonuniversal sample-dependent critical carrier density n_c separating an effective 2D metal (dρ/dT >0) for n>n_c from an effective 2D insulator (dρ/dT<0) for n<n_c. We study the 2D MIT phenomenon as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, k_F l=1. Calculating the quantum mean free path (l) in the effective metallic phase from a realistic transport theory including disorder scattering effects, we solve the integral equation defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density n_c as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the n_c is the temperature and density dependence of the Coulomb disorder. Our calculated results for the crossover n_c appear to be in qualitative and semi-quantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We provide some results for graphene where a low-temperature 2D MIT becomes possible in the presence of intervalley scattering. We also provide an extensive comparison with the theoretical results obtained on the basis of 2D MIT being considered as a percolation transition. △ Less

Submitted 5 August, 2015; v1 submitted 19 January, 2014; originally announced January 2014.

Comments: 22 pages, 15 figures. Published version in PRB, in which Secs. II and IV of the 1st version are eliminated

Journal ref: Phys. Rev. B 89, 235423 (2014)