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Magneto-phonon resonance in photoluminescence excitation spectra of magneto-excitons in GaAs/AlGaAs Superlattices
Authors:
S. Dickmann,
A. I. Tartakovskii,
V. B. Timofeev,
V. M. Zhilin,
J. Zeman,
G. Martinez,
J. M. Hvam
Abstract:
Strong increase in the intensity of the peaks of excited magneto-exciton (ME) states in the photoluminescence excitation (PLE) spectra recorded for the ground heavy-hole magneto-excitons (of the 1sHH type) has been found in a GaAs/AlGaAs superlattice in strong magnetic field B applied normal to the sample layers. While varying B the intensities of the PLE peaks have been measured as functions of e…
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Strong increase in the intensity of the peaks of excited magneto-exciton (ME) states in the photoluminescence excitation (PLE) spectra recorded for the ground heavy-hole magneto-excitons (of the 1sHH type) has been found in a GaAs/AlGaAs superlattice in strong magnetic field B applied normal to the sample layers. While varying B the intensities of the PLE peaks have been measured as functions of energy separation $ΔE$ between excited ME peaks and the ground state of the system. The resonance profiles have been found to have maxima at $ΔE_{\rm max}$ close to the energy of the GaAs LO-phonon. However, the value of $ΔE_{\rm max}$ depends on quantum numbers of the excited ME state. The revealed very low quantum efficiency of the investigated sample allows us to ascribe the observed resonance to the enhancement of the non-radiative magneto-exciton relaxation rate arising due to LO-phonon emission. The presented theoretical model, being in a good agreement with experimental observations, provides a method to extract 1sHH magneto-exciton ``in-plane" dispersion from the dependence of $ΔE_{\rm max}$ on the excited ME state quantum numbers.
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Submitted 3 November, 2015;
originally announced November 2015.
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Self-phase modulation of a single-cycle terahertz pulse by nonlinear free-carrier response in a semiconductor
Authors:
Dmitry Turchinovich,
Jørn M. Hvam,
Matthias C. Hoffmann
Abstract:
We demonstrate the self-phase modulation (SPM) of a single-cycle THz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the THz pulse, leading to an ultrafast reduction of the plasma frequency, and hence to a strong modification of the THz-range dielectric function of the material. THz SPM is observed directly i…
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We demonstrate the self-phase modulation (SPM) of a single-cycle THz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the THz pulse, leading to an ultrafast reduction of the plasma frequency, and hence to a strong modification of the THz-range dielectric function of the material. THz SPM is observed directly in the time domain. In the frequency domain it corresponds to a strong frequency-dependent refractive index nonlinearity of n-GaAs, found to be both positive and negative within the broad THz pulse spectrum, with the zero-crossing point defined by the electron momentum relaxation rate. We also observed the nonlinear spectral broadening and compression of the THz pulse.
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Submitted 23 February, 2012;
originally announced February 2012.
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Spontaneous emission from large quantum dots in nanostructures: exciton-photon interaction beyond the dipole approximation
Authors:
Søren Stobbe,
Philip T. Kristensen,
Jakob E. Mortensen,
Jørn M. Hvam,
Jesper Mørk,
Peter Lodahl
Abstract:
We derive a rigorous theory of the interaction between photons and spatially extended excitons confined in quantum dots in inhomogeneous photonic materials. We show that, beyond the dipole approximation, the radiative decay rate is proportional to a non-local interaction function, which describes the interaction between light and spatially extended excitons. In this regime, light and matter degree…
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We derive a rigorous theory of the interaction between photons and spatially extended excitons confined in quantum dots in inhomogeneous photonic materials. We show that, beyond the dipole approximation, the radiative decay rate is proportional to a non-local interaction function, which describes the interaction between light and spatially extended excitons. In this regime, light and matter degrees of freedom cannot be separated and a complex interplay between the nanostructured optical environment and the exciton envelope function emerges. We illustrate this by specific examples and derive a series of important analytical relations, which are useful for applying the formalism to practical problems. In the dipole limit, the decay rate is proportional to the projected local density of optical states and we obtain the strong and weak confinement regimes as special cases.
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Submitted 8 December, 2011;
originally announced December 2011.
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Build up of off-diagonal long-range order in microcavity exciton-polaritons across the parametric threshold
Authors:
R. Spano,
J. Cuadra,
C. Lingg,
D. Sanvitto,
M. D. Martin,
P. R. Eastham,
M. van der Poel,
J. M. Hvam,
L. Vina
Abstract:
We report an experimental study of the spontaneous spatial and temporal coherence of polariton condensates generated in the optical parametric oscillator configuration, below and at the parametric threshold, and as a function of condensate area. Above the threshold we obtain very long coherence times (up to 3 ns) and a spatial coherence extending over the entire condensate (40 μm). The very long c…
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We report an experimental study of the spontaneous spatial and temporal coherence of polariton condensates generated in the optical parametric oscillator configuration, below and at the parametric threshold, and as a function of condensate area. Above the threshold we obtain very long coherence times (up to 3 ns) and a spatial coherence extending over the entire condensate (40 μm). The very long coherence time and its dependence on condensate area and pump power reflect the suppression of polariton-polariton interactions by an effect equivalent to motional narrowing.
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Submitted 21 November, 2011;
originally announced November 2011.
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On the interpretation of wave function overlaps in quantum dots
Authors:
S. Stobbe,
J. M. Hvam,
P. Lodahl
Abstract:
The spontaneous emission rate of excitons strongly confined in quantum dots is proportional to the overlap integral of electron and hole envelope wave functions. A common and intuitive interpretation of this result is that the spontaneous emission rate is proportional to the probability that the electron and the hole are located at the same point or region in space, i.e. they must coincide spatial…
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The spontaneous emission rate of excitons strongly confined in quantum dots is proportional to the overlap integral of electron and hole envelope wave functions. A common and intuitive interpretation of this result is that the spontaneous emission rate is proportional to the probability that the electron and the hole are located at the same point or region in space, i.e. they must coincide spatially to recombine. Here we show that this interpretation is not correct even loosely speaking. By general mathematical considerations we compare the envelope wave function overlap, the exchange overlap integral, and the probability of electrons and holes coinciding and find that the frequency dependence of the envelope wave function overlap integral is very different from that expected from the common interpretation. We show that these theoretical considerations lead to predictions for measurements. We compare our qualitative predictions with recent measurements of the wave function overlap and find good agreement.
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Submitted 21 December, 2010;
originally announced December 2010.
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Large quantum dots with small oscillator strength
Authors:
S. Stobbe,
T. W. Schlereth,
S. Höfling,
A. Forchel,
J. M. Hvam,
P. Lodahl
Abstract:
We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm.…
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We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size and predict a very large oscillator strength due to Coulomb effects. This is in stark contrast to the measured oscillator strength, which turns out to be much below the upper limit imposed by the strong confinement model. We attribute these findings to exciton localization in local potential minima arising from alloy intermixing inside the quantum dots.
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Submitted 30 June, 2010;
originally announced June 2010.
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Exciton spin-flip rate in quantum dots determined by a modified local density of optical states
Authors:
Jeppe Johansen,
Brian Julsgaard,
Søren Stobbe,
Jørn M. Hvam,
Peter Lodahl
Abstract:
The spin-flip rate that couples dark and bright excitons in self-assembled quantum dots is obtained from time-resolved spontaneous emission measurements in a modified local density of optical states. Employing this technique, we can separate effects due to non-radiative recombination and unambiguously record the spin-flip rate. The dependence of the spin-flip rate on emission energy is compared…
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The spin-flip rate that couples dark and bright excitons in self-assembled quantum dots is obtained from time-resolved spontaneous emission measurements in a modified local density of optical states. Employing this technique, we can separate effects due to non-radiative recombination and unambiguously record the spin-flip rate. The dependence of the spin-flip rate on emission energy is compared in detail to a recent model from the literature, where the spin flip is due to the combined action of short-range exchange interaction and acoustic phonons. We furthermore observe a surprising enhancement of the spin-flip rate close to a semiconductor-air interface, which illustrates the important role of interfaces for quantum dot based nanophotonic structures. Our work is an important step towards a full understanding of the complex dynamics of quantum dots in nanophotonic structures, such as photonic crystals, and dark excitons are potentially useful for long-lived coherent storage applications.
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Submitted 27 May, 2009;
originally announced May 2009.
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Frequency dependence of the radiative decay rate of excitons in self-assembled quantum dots: experiment and theory
Authors:
Søren Stobbe,
Jeppe Johansen,
Philip Trøst Kristensen,
Jørn M. Hvam,
Peter Lodahl
Abstract:
We analyze time-resolved spontaneous emission from excitons confined in self-assembled $\mathrm{InAs}$ quantum dots placed at various distances to a semiconductor-air interface. The modification of the local density of optical states due to the proximity of the interface enables unambiguous determination of the radiative and non-radiative decay rates of the excitons. From measurements at various…
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We analyze time-resolved spontaneous emission from excitons confined in self-assembled $\mathrm{InAs}$ quantum dots placed at various distances to a semiconductor-air interface. The modification of the local density of optical states due to the proximity of the interface enables unambiguous determination of the radiative and non-radiative decay rates of the excitons. From measurements at various emission energies we obtain the frequency dependence of the radiative decay rate, which is only revealed due to the separation of the radiative and non-radiative parts. It contains detailed information about the dependence of the exciton wavefunction on quantum dot size. The experimental results are compared to the quantum optics theory of a solid state emitter in an inhomogeneous environment. Using this model, we extract the frequency dependence of the overlap between the electron and hole wavefunctions. We furthermore discuss three models of quantum dot strain and compare the measured wavefunction overlap to these models. The observed frequency dependence of the wavefunction overlap can be understood qualitatively in terms of the different compressibility of electrons and holes originating from their different effective masses.
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Submitted 2 February, 2009;
originally announced February 2009.
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Size-Dependence of the Wavefunction of Self-Assembled Quantum Dots
Authors:
J. Johansen,
S. Stobbe,
I. S. Nikolaev,
T. Lund-Hansen,
P. T. Kristensen,
J. M. Hvam,
W. L. Vos,
P. Lodahl
Abstract:
The radiative and non-radiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements we extract the oscillator strength and the quantum efficiency and their dependence on emission energy. From our results and a theoretical model we determine the striking dependence of the overlap of the electron and ho…
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The radiative and non-radiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements we extract the oscillator strength and the quantum efficiency and their dependence on emission energy. From our results and a theoretical model we determine the striking dependence of the overlap of the electron and hole wavefunctions on the quantum dot size. We conclude that the optical quality is best for large quantum dots, which is important in order to optimally tailor quantum dot emitters for, e.g., quantum electrodynamics experiments.
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Submitted 10 December, 2007; v1 submitted 13 July, 2007;
originally announced July 2007.
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Carrier Dynamics in Submonolayer InGaAs/GaAs Quantum Dots
Authors:
Zhangcheng Xu,
Yating Zhang,
J{$1}rn M. Hvam,
**gjun Xu,
Xiaoshuang Chen,
Wei Lu
Abstract:
Carrier dynamics of submonolayer (SML) InGaAs/GaAs quantum dots (QDs) were studied by micro-photoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon modes. TRPL reveal shorter recombination lifetimes and longer capture times for the QDs with h…
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Carrier dynamics of submonolayer (SML) InGaAs/GaAs quantum dots (QDs) were studied by micro-photoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon modes. TRPL reveal shorter recombination lifetimes and longer capture times for the QDs with higher emission energy. This suggests that the smallest SML QDs are formed by perfectly vertically correlated 2D InAs islands, having the highest In content and the lowest emission energy, while a slight deviation from the perfectly vertical correlation produces larger QDs with lower In content and higher emission energy.
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Submitted 7 February, 2006;
originally announced February 2006.
