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Vibrational and mechanical properties of the highly mismatched (Cd,Be)Te semiconductor alloy : Experiment and ab initio calculations
Authors:
A. Elmahjoubi,
M. B. Shoker,
O. Pages,
V. J. B. Torres,
A. Polian,
A. V. Postnikov,
C. Bellin,
K. Beneut,
C. Gardiennet,
G. Kervern,
A. EnNaciri,
L. Broch,
R. Hajj Hussein,
J. -P. Itie,
L. Nataf,
S. Ravy,
P. Franchetti,
S. Diliberto,
S. Michel,
A. Abouais,
K. Strzalkowski
Abstract:
The (Cd, Be)Te semiconductor alloy that exhibits a dramatic mismatch in bond covalency and stiffness clarifying its vibrational and mechanical properties is used as a benchmark to test the limits of the percolation model (PM) worked out to explain the complex Raman spectra of the related but less contrasted (Zn, Be) chalcogenides. The test is done by way of experiment (x smaller than 0.11) combini…
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The (Cd, Be)Te semiconductor alloy that exhibits a dramatic mismatch in bond covalency and stiffness clarifying its vibrational and mechanical properties is used as a benchmark to test the limits of the percolation model (PM) worked out to explain the complex Raman spectra of the related but less contrasted (Zn, Be) chalcogenides. The test is done by way of experiment (x smaller than 0.11) combining Raman scattering with X ray diffraction at high pressure and ab initio calculations (x around 0, 0.5 and 1). The (macroscopic) bulk modulus B drops below the CdTe value on minor Be incorporation, at variance with a linear B versus x increase predicted ab initio, thus hinting at large anharmonic effects in the real crystal. Yet, no anomaly occurs at the microscopic (bond) scale as the regular bimodal PM Raman signal predicted ab initio for the BeTe bond in minority (x around 0 and 0.5) is (barely) detected experimentally. Although at large Be content (x around 1) the same bimodal signal relaxes down to inversion, an unprecedented case, specific pressure dependencies of the regular (x around 0 and 0.5) and inverted (x around 1) BeTe Raman doublets are in line with PM predictions. Hence, the PM applies as such to (Cd, Be)Te albeit in a relaxed form, without further refinement. This enhances the scheme validity as a generic descriptor of phonons in alloys.
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Submitted 3 March, 2023;
originally announced March 2023.
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Pressure-induced phonon freezing in the ZnSeS II-VI mixed crystal: phonon-polaritons and ab initio calculations
Authors:
R. Hajj Hussein,
O. Pages,
A. Polian,
A. V. Postnikov,
H. Dicko,
F. Firszt,
K. Strzalkowski,
W. Paszkowicz,
L. Broch,
S. Ravy,
P. Fertey
Abstract:
Near-forward Raman scattering combined with ab initio phonon and bond length calculations is used to study the phonon-polariton transverse optical modes (with mixed electrical and mechanical character) of the II-VI ZnSeS mixed crystal under pressure. The goal of the study is to determine the pressure dependence of the poorly resolved percolation-type Zn-S Raman doublet of the three oscillator [1(Z…
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Near-forward Raman scattering combined with ab initio phonon and bond length calculations is used to study the phonon-polariton transverse optical modes (with mixed electrical and mechanical character) of the II-VI ZnSeS mixed crystal under pressure. The goal of the study is to determine the pressure dependence of the poorly resolved percolation-type Zn-S Raman doublet of the three oscillator [1(Zn-Se),2(Zn-S)] ZnSe68S32 mixed crystal, which exhibits a phase transition at approximately the same pressure as its two end compounds (~14 GPa, zincblende-to-rocksalt), as determined by high-pressure x-ray diffraction. We find that the intensity of the lower Zn-S sub-mode of ZnSe68S32, due to Zn-S bonds vibrating in their own (S-like) environment, decreases under pressure (Raman scattering), whereas its frequency progressively converges onto that of the upper Zn- S sub-mode, due to Zn-S vibrations in the foreign (Se-like) environment (ab initio calculations). Ultimately, only the latter sub-mode survives. A similar phonon freezing was earlier evidenced with the well-resolved percolation-type Be-Se doublet of ZnBeSe [Pradhan et al. Phys. Rev. B 81, 115207 (2010)], that exhibits a large contrast in the pressure-induced structural transitions of its end compounds. We deduce that the above collapse and convergence process is intrinsic to the percolation doublet of a short bond under pressure, at least in a ZnSe-based mixed crystal, and not due to any pressure-induced structural transition.
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Submitted 3 March, 2016; v1 submitted 2 March, 2016;
originally announced March 2016.
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Near-forward Raman study of a phonon-polariton reinforcement regime in the Zn(Se,S) alloy
Authors:
Rami Hajj Hussein,
Olivier Pagès,
Franciszek Firszt,
Agnieszka Marasek,
Wojtek Paszkowicz,
Alain Maillard,
Laurent Broch
Abstract:
We investigate by near-forward Raman scattering a presumed reinforcement of the (A-C,B-C)-mixed phonon-polariton of a A1-xBxC zincblende alloy when entering its longitudinal optical (LO-)regime near the Brillouin zone centre Γ, as predicted within the formalism of the linear dielectric response. A choice system to address such issue is ZnSe0.68S0.32 due to the moderate dispersion of its refractive…
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We investigate by near-forward Raman scattering a presumed reinforcement of the (A-C,B-C)-mixed phonon-polariton of a A1-xBxC zincblende alloy when entering its longitudinal optical (LO-)regime near the Brillouin zone centre Γ, as predicted within the formalism of the linear dielectric response. A choice system to address such issue is ZnSe0.68S0.32 due to the moderate dispersion of its refractive index in the visible range, a sine qua non condition to bring the phonon-polariton insight near Γ. The LO-regime is actually accessed by using the 633.0 nm laser excitation, testified by the strong emergence of the (Zn-Se,Zn-S)-mixed phonon-polariton at ultimately small scattering angles.
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Submitted 9 June, 2014; v1 submitted 6 June, 2014;
originally announced June 2014.
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Near-forward Raman scattering by bulk and surface phonon-polaritons in the model percolation-type ZnBeSe alloy
Authors:
Rami Hajj Hussein,
Olivier Pagès,
Franciszek Firszt,
Wojtek Paszkowicz,
Alain Maillard
Abstract:
We study the bulk and surface phonon-polaritons of the Zn0.67Be0.33Se zincblende alloy by near-forward Raman scattering. The short (Be-Se) bond exhibits a distinct percolation doublet in the conventional backscattering Raman spectra, corresponding to a three-mode behavior in total [1(Zn-Se),2(Be-Se)] for Zn0.67Be0.33Se. This offers an opportunity to achieve a refined understanding of the phonon-po…
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We study the bulk and surface phonon-polaritons of the Zn0.67Be0.33Se zincblende alloy by near-forward Raman scattering. The short (Be-Se) bond exhibits a distinct percolation doublet in the conventional backscattering Raman spectra, corresponding to a three-mode behavior in total [1(Zn-Se),2(Be-Se)] for Zn0.67Be0.33Se. This offers an opportunity to achieve a refined understanding of the phonon-polariton modes of a zincblende alloy beyond the current two-mode approximation, corresponding to a [1(Zn-Se),1(Be-Se)] description in the present case. The discussion is supported by contour modeling of the Raman signals of the multi-mode bulk and surface phonon-polaritons within the formalism of the linear dielectric response.
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Submitted 25 July, 2013;
originally announced July 2013.
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SiGe Raman spectra vs. local clustering/anticlustering : Percolation scheme and ab initio calculations
Authors:
Olivier Pages,
Rami Hajj Hussein,
Vitor J. B. Torres
Abstract:
We formalize within the percolation scheme, that operates along the linear chain approximation, namely at one dimension (1D), an intrinsic ability behind Raman scattering to achieve a quantitative insight into local clustering or anticlustering in an alloy, using SiGe as a case study. For doing so, we derive general expressions of the individual fractions of the six SiGe percolation-type oscillato…
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We formalize within the percolation scheme, that operates along the linear chain approximation, namely at one dimension (1D), an intrinsic ability behind Raman scattering to achieve a quantitative insight into local clustering or anticlustering in an alloy, using SiGe as a case study. For doing so, we derive general expressions of the individual fractions of the six SiGe percolation-type oscillators [1(Ge-Ge), 3(Si-Ge), 2(Si-Si)], which monitor directly the Raman intensities, via a relevant order parameter k. This is introduced by adapting to the 1D oscillators of the SiGe diamond version of the 1D percolation scheme, namely along a fully consistent 1D treatment, the approach originally used by Verleur and Barker for the three-dimensional (3D) oscillators of their 1D cluster scheme applying to zincblende alloys [H.W. Verleur and A.S. Barker, Phys. Rev. 149, 715 (1966)], a somehow problematic one in fact, due to its 3D vs. 1D ambivalence. Predictive k-dependent intensity interplays between the SiGe (50 at.%Si) Raman lines are confronted with existing experimental data and with ab initio Raman spectra obtained by using large (32 atom) disordered supercells matching the required k values, with special attention to the Si-Ge triplet and to the Si-Si doublet, respectively.
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Submitted 30 April, 2013;
originally announced April 2013.
