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Lifshitz Transition and Band Structure Evolution in Alkali Metal Intercalated 1Tprime-MoTe2
Authors:
Joohyung Park,
Ayan N. Batyrkhanov,
Jonas Brandhoff,
Marco Gruenewald,
Felix Otto,
Maximilian Schaal,
Saban Hus,
Torsten Fritz,
Florian Göltl,
An-** Li,
Oliver L. A. Monti
Abstract:
MoTe2 is a paradigmatic van der Waals layered semimetal with two energetically close electronic phases, the topologically trivial 1Tprime and the low-temperature Td type-II Weyl semimetal phase. The ability to manipulate this phase transition, perhaps towards occurring near room temperature, would open new avenues for harnessing the full potential of Weyl semimetals for high-efficiency electronic…
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MoTe2 is a paradigmatic van der Waals layered semimetal with two energetically close electronic phases, the topologically trivial 1Tprime and the low-temperature Td type-II Weyl semimetal phase. The ability to manipulate this phase transition, perhaps towards occurring near room temperature, would open new avenues for harnessing the full potential of Weyl semimetals for high-efficiency electronic and spintronic applications. Here, we show that potassium dosing on 1Tprime-MoTe2 induces a Lifshitz transition by a combination of angle-resolved photoemission spectroscopy, scanning tunneling microscopy, x-ray spectroscopy and density functional theory. While the electronic structure shifts rigidly for small concentrations of K, MoTe2 undergoes significant band structure renormalization for larger concentrations. Our results demonstrate that the origin of this electronic structure change stems from alkali metal intercalation. We show that these profound changes are caused by effectively decoupling the 2D sheets, bringing K-intercalated 1Tprime-MoTe2 to the quasi-2D limit, but do not cause a topological phase transition.
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Submitted 31 January, 2024; v1 submitted 23 December, 2023;
originally announced December 2023.
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Autonomous convergence of STM control parameters using Bayesian Optimization
Authors:
Ganesh Narasimha,
Saban Hus,
Arpan Biswas,
Rama Vasudevan,
Maxim Ziatdinov
Abstract:
Scanning Tunneling microscopy (STM) is a widely used tool for atomic imaging of novel materials and its surface energetics. However, the optimization of the imaging conditions is a tedious process due to the extremely sensitive tip-surface interaction, and thus limits the throughput efficiency. Here we deploy a machine learning (ML) based framework to achieve optimal-atomically resolved imaging co…
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Scanning Tunneling microscopy (STM) is a widely used tool for atomic imaging of novel materials and its surface energetics. However, the optimization of the imaging conditions is a tedious process due to the extremely sensitive tip-surface interaction, and thus limits the throughput efficiency. Here we deploy a machine learning (ML) based framework to achieve optimal-atomically resolved imaging conditions in real time. The experimental workflow leverages Bayesian optimization (BO) method to rapidly improve the image quality, defined by the peak intensity in the Fourier space. The outcome of the BO prediction is incorporated into the microscope controls, i.e., the current setpoint and the tip bias, to dynamically improve the STM scan conditions. We present strategies to either selectively explore or exploit across the parameter space. As a result, suitable policies are developed for autonomous convergence of the control-parameters. The ML-based framework serves as a general workflow methodology across a wide range of materials.
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Submitted 26 October, 2023;
originally announced October 2023.
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Emergence of a new band and the Lifshitz transition in kagome metal ScV$_6$Sn$_6$ with charge density wave
Authors:
Seoung-Hun Kang,
Haoxiang Li,
William R. Meier,
John W. Villanova,
Saban Hus,
Hoyeon Jeon,
Hasitha W. Suriya Arachchige,
Qiangsheng Lu,
Zheng Gai,
Jonathan Denlinger,
Rob Moore,
Mina Yoon,
David Mandrus
Abstract:
Topological kagome systems have been a topic of great interest in condensed matter physics due totheir unique electronic properties. The vanadium-based kagome materials are particularly intrigu-ing since they exhibit exotic phenomena such as charge density wave (CDW) and unconventionalsuperconductivity. The origin of these electronic instabilities is not fully understood, and the re-cent discovery…
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Topological kagome systems have been a topic of great interest in condensed matter physics due totheir unique electronic properties. The vanadium-based kagome materials are particularly intrigu-ing since they exhibit exotic phenomena such as charge density wave (CDW) and unconventionalsuperconductivity. The origin of these electronic instabilities is not fully understood, and the re-cent discovery of a charge density wave in ScV6Sn6provides a new avenue for investigation. In thiswork, we investigate the electronic structure of the novel kagome metal ScV6Sn6using angle resolvedphotoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and first-principlesdensity functional theory calculations. Our analysis reveals for the first time the temperature-dependent band changes of ScV6Sn6and identifies a new band that exhibits a strong signatureof a structure with CDW below the critical temperature. Further analysis revealed that this newband is due to the surface kagome layer of the CDW structure. In addition, a Lifshitz transition isidentified in the ARPES spectra that is related to the saddle point moving across the Fermi levelat the critical temperature for the CDW formation. This result shows the CDW behavior may alsobe related to nesting of the saddle point, similar to related materials. However, no energy gap is observed at the Fermi level and thus the CDW is not a typical Fermi surface nesting scenario. These results provide new insights into the underlying physics of the CDW in the kagome materials and could have implications for the development of materials with new functionality.
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Submitted 27 February, 2023;
originally announced February 2023.
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Taming Atomic Defects for Quantum Functions
Authors:
Saban M. Hus,
An-** Li
Abstract:
Single atoms provide an ideal system for utilizing fundamental quantum functions. Their electrons have well-defined energy levels and spin properties. Even more importantly, for a given isotope -- say, $^{12}$C -- all the atoms are identical. This creates a perfect uniformity that is impossible to achieve in macroscopic-size quantum systems. However, herding individual atoms is a very difficult ta…
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Single atoms provide an ideal system for utilizing fundamental quantum functions. Their electrons have well-defined energy levels and spin properties. Even more importantly, for a given isotope -- say, $^{12}$C -- all the atoms are identical. This creates a perfect uniformity that is impossible to achieve in macroscopic-size quantum systems. However, herding individual atoms is a very difficult task that requires trap** them with magnetic or optical means and cooling them down to temperatures in the nanokelvin range. On the other hand, the counterpart of single atoms -- the single defects -- may be as good as atom-based quantum systems if not better. These defects, also referred as quantum defects, possess the favorable energy, spin, and uniformity properties of single atoms and remain in their place without the help of precisely tuned lasers. While the number of usable isotopes is set, the combinations of defects and their host material are practically limitless, giving us the flexibility to create precisely designed and controlled quantum systems. Furthermore, as we tame these defects for the quantum world, we bring about transformative opportunities to the classical world in forms such as ultradense electronic devices and precise manufacturing. In this research insight, we introduce some of our recent work on precisely controlled creation and manipulation of individual defects with a scanning tunneling microscope (STM). We also discuss possible pathways for utilizing these capabilities for the development of novel systems for Quantum Information Science (QIS) applications such as quantum information processing and ultrasensitive sensors.
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Submitted 22 September, 2022;
originally announced September 2022.
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Single-defect Memristor in MoS$_2$ Atomic-layer
Authors:
Saban M. Hus,
Rui**g Ge,
Po-An Chen,
Meng-Hsueh Chiang,
Gavin E. Donnelly,
Wonhee Ko,
Fumin Huang,
Liangbo Liang,
An-** Li,
Deji Akinwande
Abstract:
Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, the unexpected discovery of memristor effect in atomic monolayers of transitional metal dichalcogenide sandwich structures has add…
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Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, the unexpected discovery of memristor effect in atomic monolayers of transitional metal dichalcogenide sandwich structures has added a new dimension of interest owing to the prospects of size scaling and the associated benefits. However, the origin of the switching mechanism in atomic sheets remains uncertain. Here, using monolayer MoS$_2$ as a model system, atomistic imaging and spectroscopy reveal that metal substitution into sulfur vacancy results in a non-volatile change in resistance. The experimental observations are corroborated by computational studies of defect structures and electronic states. These remarkable findings provide an atomistic understanding on the non-volatile switching mechanism and open a new direction in precision defect engineering, down to a single defect, for achieving optimum performance metrics including memory density, switching energy, speed, and reliability using atomic nanomaterials.
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Submitted 4 February, 2020;
originally announced February 2020.
