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P-type behavior of CrN thin films by control of point defects
Authors:
Arnaud le Febvrier,
Davide Gambino,
Fabien Giovannelli,
Babak Bakhit,
Simon Hurand,
Gregory Abadias,
Björn Alling,
Per Eklund
Abstract:
We report the results of a combined experimental and theoretical study on nonstoichiometric CrN1+d thin films grown by reactive magnetron sputtering on c-plane sapphire, MgO (100) and LaAlO3 (100) substrates in a Ar/N2 gas mixture using different percentage of N2. There is a transition from n-type to p-type behavior in the layers as a function of nitrogen concentration varying from 48 at. % to 52…
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We report the results of a combined experimental and theoretical study on nonstoichiometric CrN1+d thin films grown by reactive magnetron sputtering on c-plane sapphire, MgO (100) and LaAlO3 (100) substrates in a Ar/N2 gas mixture using different percentage of N2. There is a transition from n-type to p-type behavior in the layers as a function of nitrogen concentration varying from 48 at. % to 52 at. % in CrN films. The compositional change follows a similar trend for all substrates, with a N/Cr ratio increasing from approximately 0.7 to 1.06-1.10 by increasing percentage of N2 in the gas flow ratio. As a result of the change in stoichiometry, the lattice parameter and the Seebeck coefficient increase together with the increase of N in CrN1+d; in particular, the Seebeck value coefficient transitions from -50 uV.K-1 for CrN0.97 to +75 uV.K-1 for CrN1.1. Density functional theory calculations show that Cr vacancies can account for the change in Seebeck coefficient, since they push the Fermi level down in the valence band, whereas N interstitial defects in the form of N2 dumbbells are needed to explain the increasing lattice parameter. Calculations including both types of defects, which have a strong tendency to bind together, reveal a slight increase in the lattice parameter and a simultaneous formation of holes in the valence band. To explain the experimental trends, we argue that both Cr vacancies and N2 dumbbells, possibly in combined configurations, are present in the films. We demonstrate the possibility of controlling the semiconducting behavior of CrN with intrinsic defects from n- to p-type, opening possibilities to integrate this compound in energy-harvesting thermoelectric devices.
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Submitted 21 February, 2022; v1 submitted 15 November, 2021;
originally announced November 2021.
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Origin of the dome-shaped superconducting phase diagram in $\mathrm{SrTiO}_3$-based interfaces
Authors:
A. Jouan,
S. Hurand,
G. Singh,
E. Lesne,
A. Barthélémy,
M. Bibes,
C. Ulysse,
G. Saiz,
C. Feuillet-Palma,
J. Lesueur,
N. Bergeal
Abstract:
A dome-shaped phase diagram of superconducting critical temperature upon do** is often considered as a hallmark of unconventional superconductors. This behavior, observed in two-dimensional electron gases in $\mathrm{SrTiO}_3$-based interfaces whose electronic density is controlled by field effect, has not been explained unambiguously yet. Here, we elaborate a generic scenario for the supercondu…
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A dome-shaped phase diagram of superconducting critical temperature upon do** is often considered as a hallmark of unconventional superconductors. This behavior, observed in two-dimensional electron gases in $\mathrm{SrTiO}_3$-based interfaces whose electronic density is controlled by field effect, has not been explained unambiguously yet. Here, we elaborate a generic scenario for the superconducting phase diagram of these oxide interfaces based on Schrödinger-Poisson numerical simulations of the quantum well and transport experiments on a double-gate field-effect device. We propose that the optimal do** point of maximum $T_c$ marks the transition between a single-band and a fragile two-gap s$\pm$-wave superconducting state involving $t_{2g}$ bands of different orbital character. At the optimal do** point, we predict and observe experimentally a bifurcation in the dependence of $T_c$ on the carrier density, which is controlled by the details of the do** execution. Where applying a back-gate voltage triggers the filling of a high-energy $d_\mathrm{xy}$ subband and initiates the overdoped regime, do** with a top-gate delays the filling of the subband and maintains the 2-DEG in the single-band superconducting state of higher $T_c$.
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Submitted 16 April, 2021;
originally announced April 2021.
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One MAX phase, different MXenes: a guideline to understand the crucial role of etching conditions on Ti$_3$C$_2$T$_x$ surface chemistry
Authors:
Mohamed Benchakar,
Lola Loupias,
Cyril Garnero,
Thomas Bilyk,
Claudia Morais,
Christine Canaff,
Nadia Guignard,
Sophie Morisset,
Hanna Pazniak,
Simon Hurand,
Patrick Chartier,
Jérôme Pacaud,
Vincent Mauchamp,
Michel Barsoum,
Aurélien Habrioux,
Stephane Celerier
Abstract:
MXenes are a new, and growing, family of 2D materials with very promising properties for a wide variety of applications. Obtained from the etching of MAX phases, numerous properties can be targeted thanks to the chemical richness of the precursors. Herein, we highlight how etching agents govern surface chemistries of Ti$_3$C$_2$T$_x$, the most widely studied MXene to date. By combining characteriz…
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MXenes are a new, and growing, family of 2D materials with very promising properties for a wide variety of applications. Obtained from the etching of MAX phases, numerous properties can be targeted thanks to the chemical richness of the precursors. Herein, we highlight how etching agents govern surface chemistries of Ti$_3$C$_2$T$_x$, the most widely studied MXene to date. By combining characterization tools such as X-ray diffraction, X-ray photoelectron, Raman and electron energy loss spectroscopies, scanning and transmission electron microscopies and a surface sensitive electrochemical reaction-the hydrogen evolution reaction, HER-we clearly demonstrate that the etching agent (HF, LiF/HCl or FeF$_3$/HCl) strongly modifies the nature of surface terminal groups (F, OH and/or O), oxidation sensitivity, delamination ability, nature of the inserted species, interstratification, concentration of defects and size of flakes. Beyond showing how using these different characterization tools to analyze MXenes, this work highlights that the MXene synthesis routes can influence targeted applications.
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Submitted 23 July, 2020;
originally announced July 2020.
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Optical and nanostructural insights of oblique angle deposited layers applied for photononic coatings
Authors:
Florian Maudet,
Bertrand Lacroix,
Antonio J. Santos,
Fabien Paumier,
Maxime Paraillous,
Simon Hurand,
Alan Corvisier,
Cecile Marsal,
Baptiste Giroire,
Cyril Dupeyrat,
Rafael García,
Francisco M. Morales,
Thierry Girardeau
Abstract:
Oblique angle deposition (OAD) is a nanostructuration method widely used to tune the optical properties of thin films. The introduction of porosity controlled by the deposition angle is used to develop the architecture of each layer and stack that enable modifying and optimizing the optical properties of the constituent layers for optimal design. However, optical properties of these nanostructured…
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Oblique angle deposition (OAD) is a nanostructuration method widely used to tune the optical properties of thin films. The introduction of porosity controlled by the deposition angle is used to develop the architecture of each layer and stack that enable modifying and optimizing the optical properties of the constituent layers for optimal design. However, optical properties of these nanostructured layers may differ greatly from those of dense layers due to the presence of anisotropy, refractive index gradient and scattering. This work focuses on OAD layers based on a reference photonic material such as SiO2 and it aims at taking into account all these effects in the description of the optical response. For that, the nanostructure has been analyzed with a complete SEM study and key parameters like the porosity gradient profile and aspect ratio of the nanocolumns were extracted. The samples were then characterized by generalized ellipsometry to evaluate the influence of morphological anisotropy and porosity gradient on the optical response of the films. Based on this microstructural study, an original optical model is presented to fit the features of new optical properties. A reliable correspondence is observed between the optical model parameters and the microstructure characteristics like the column angle and the porosity gradient. This demonstrates that such complex microstructural parameters can be easily accessed solely from optical measurements. All the work has enabled us to develop a two-layer anti-reflective coating that already demonstrate high level of transmission.
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Submitted 18 December, 2019;
originally announced December 2019.
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On the importance of light scattering for high performances nanostructured antireflective surfaces
Authors:
Florian Maudet,
Bertrand Lacroix,
Antonio J. Santos,
Fabien Paumier,
Maxime Paraillous,
Simon Hurand,
Alan Corvisier,
Cyril Dupeyrat,
Rafael García,
Francisco M. Morales,
Thierry Girardeau
Abstract:
An antireflective coating presenting a continuous refractive index gradient is theoretically better than its discrete counterpart because it can give rise to a perfect broadband transparency. This kind of surface treatment can be obtained with nanostructures like moth-eye. Despite the light scattering behavior must be accounted as it can lead to a significant transmittance drop, no methods are act…
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An antireflective coating presenting a continuous refractive index gradient is theoretically better than its discrete counterpart because it can give rise to a perfect broadband transparency. This kind of surface treatment can be obtained with nanostructures like moth-eye. Despite the light scattering behavior must be accounted as it can lead to a significant transmittance drop, no methods are actually available to anticipate scattering losses in such nanostructured antireflective coatings. To overcome this current limitation, we present here an original way to simulate the scattering losses in these systems and routes to optimize the transparency. This method, which was validated by a comparative study of coatings presenting refractive indices with either discrete or continuous gradient, shows that a discrete antireflective coating bilayer made by oblique angle deposition allows reaching ultra-high mean transmittance of 98.97% over the broadband [400-1800] nm. Such simple surface treatment outperforms moth-eye architectures thanks to both interference effect and small dimensions nanostructures that minimize the scattering losses as confirmed by finite-difference time domain simulations performed on reconstructed volumes obtained from electron tomography experiments.
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Submitted 14 June, 2019;
originally announced June 2019.
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Non-linear $IV$ characteristics in two-dimensional superconductors: Berezinskii-Kosterlitz-Thouless physics vs inhomogeneity
Authors:
G. Venditti,
J. Biscaras,
S. Hurand,
N. Bergeal,
J. Lesueur,
A. Dogra,
R. C. Budhani,
Mintu Mondal,
John Jesudasan,
Pratap Raychaudhuri,
S. Caprara,
L. Benfatto
Abstract:
One of the hallmarks of the Berezinskii-Kosterlitz-Thouless (BKT) transition in two-dimensional (2D) superconductors is the universal jump of the superfluid density, that can be indirectly probed via the non-linear exponent of the current-voltage $IV$ characteristics. Here, we compare the experimental measurements of $IV$ characteristics in two cases, namely NbN thin films and SrTiO$_3$-based inte…
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One of the hallmarks of the Berezinskii-Kosterlitz-Thouless (BKT) transition in two-dimensional (2D) superconductors is the universal jump of the superfluid density, that can be indirectly probed via the non-linear exponent of the current-voltage $IV$ characteristics. Here, we compare the experimental measurements of $IV$ characteristics in two cases, namely NbN thin films and SrTiO$_3$-based interfaces. While the former display a paradigmatic example of BKT-like non-linear effects, the latter do not seem to justify a BKT analysis. Rather, the observed $IV$ characteristics can be well reproduced theoretically by modelling the effect of mesoscopic inhomogeneity of the superconducting state. Our results offer an alternative perspective on the spontaneous fragmentation of the superconducting background in confined 2D systems.
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Submitted 30 August, 2019; v1 submitted 3 May, 2019;
originally announced May 2019.
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Quantized conductance in a one-dimensional ballistic oxide nanodevice
Authors:
A. Jouan,
G. Singh,
E. Lesne,
D. C. Vaz,
M. Bibes,
A. Barthélémy,
C. Ulysse,
D. Stornaiuolo,
M. Salluzzo,
S. Hurand,
J. Lesueur,
C. Feuillet-Palma,
N. Bergeal
Abstract:
Electric-field effect control of two-dimensional electron gases (2-DEG) has enabled the exploration of nanoscale electron quantum transport in semiconductors. Beyond these classical materials, transition metal-oxide-based structures have d-electronic states favoring the emergence of novel quantum orders absent in conventional semiconductors. In this context, the LaAlO3/SrTiO3 interface that combin…
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Electric-field effect control of two-dimensional electron gases (2-DEG) has enabled the exploration of nanoscale electron quantum transport in semiconductors. Beyond these classical materials, transition metal-oxide-based structures have d-electronic states favoring the emergence of novel quantum orders absent in conventional semiconductors. In this context, the LaAlO3/SrTiO3 interface that combines gate-tunable superconductivity and sizeable spin-orbit coupling is emerging as a promising platform to realize topological superconductivity. However, the fabrication of nanodevices in which the electronic properties of this oxide interface can be controlled at the nanoscale by field-effect remains a scientific and technological challenge. Here, we demonstrate the quantization of conductance in a ballistic quantum point contact (QPC), formed by electrostatic confinement of the LaAlO3/SrTiO3 2-DEG with a split-gate. Through finite source-drain voltage, we perform a comprehensive spectroscopic investigation of the 3d energy levels inside the QPC, which can be regarded as a spectrometer able to probe Majorana states in an oxide 2-DEG.
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Submitted 28 March, 2019;
originally announced March 2019.
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Effect of disorder on superconductivity and Rashba spin-orbit coupling in LaAlO3/SrTiO3 interfaces
Authors:
G. Singh,
A. Jouan,
S. Hurand,
C. Palma,
P. Kumar,
A. Dogra,
R. Budhani,
J. Lesueur,
N. Bergeal
Abstract:
A rather unique feature of the two-dimensional electron gas (2-DEG) formed at the interface between the two insulators LaAlO3 and SrTiO3 is to host both gate-tunable superconductivity and strong spin-orbit coupling. In the present work, we use the disorder generated by Cr substitution of Al atoms in LaAlO3 as a tool to explore the nature of superconductivity and spin-orbit coupling in these interf…
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A rather unique feature of the two-dimensional electron gas (2-DEG) formed at the interface between the two insulators LaAlO3 and SrTiO3 is to host both gate-tunable superconductivity and strong spin-orbit coupling. In the present work, we use the disorder generated by Cr substitution of Al atoms in LaAlO3 as a tool to explore the nature of superconductivity and spin-orbit coupling in these interfaces. A reduction of the superconducting Tc is observed with Cr do** consistent with an increase of electron-electron interaction in presence of disorder. In addition, the evolution of spin-orbit coupling with gate voltage and Cr do** suggests a D'Yakonov-Perel mechanism of spin relaxation in the presence of a Rashba-type spin-orbit interaction.
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Submitted 5 October, 2016;
originally announced October 2016.
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Density driven fluctuations in a two-dimensional superconductor
Authors:
S. Hurand,
J. Biscaras,
N. Bergeal,
C. Feuillet-Palma,
G. Singh,
A. Jouan,
A. Rastogi,
A. Dogra,
P. Kumar,
R. C. Budhani,
N. Scopigno,
S. Caprara,
M. Grilli,
J. Lesueur
Abstract:
In the vicinity of a phase transition, the order parameter starts fluctuating before vanishing at the critical point. The fluctuation regime, i.e. the way the ordered phase disappears, is a characteristics of a transition, and determines the universality class it belongs to. This is valid for thermal transitions, but also for zero temperature Quantum Phase Transitions (QPT).
In the case of super…
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In the vicinity of a phase transition, the order parameter starts fluctuating before vanishing at the critical point. The fluctuation regime, i.e. the way the ordered phase disappears, is a characteristics of a transition, and determines the universality class it belongs to. This is valid for thermal transitions, but also for zero temperature Quantum Phase Transitions (QPT).
In the case of superconductivity, the order parameter has an amplitude and a phase, which can both fluctuate according to well identified scenarios. The Ginzburg-Landau theory and its extensions describe the fluctuating regime of regular metallic superconductors, and the associated dynamics of the pair amplitude and the phase. When the system is two-dimensional and/or very disordered, phase fluctuations dominate.
Here, we address the possibility that a new type of fluctuations occurs in superconductors with an anomalous dynamics. In particular we show that the superconducting to metal QPT that occurs upon changing the gate voltage in two-dimensional electron gases at LAO/STO and LTO/STO interfaces displays anomalous scaling properties, which can be explained by density driven superconducting critical fluctuations.
A Finite Size Scaling (FSS) analysis reveals that the product z.nu (nu is the correlation length exponent and z the dynamical critical one) is z.nu = 3/2. We argue that critical superconducting fluctuations acquire an anomalous dynamics with z=3, since they couple to density ones in the vicinity of a spontaneous electronic phase separation, and that nu=1/2 corresponds to the mean-field value. This approach strongly departs from the conventional z=1 scenario in disordered 2D systems based on long-range Coulomb interactions with dominant phase fluctuations. This scenario can explain recent data in LSCO ultra-thin films, and apply to a whole class of two-dimensional superconductors.
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Submitted 23 June, 2015;
originally announced June 2015.
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Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices
Authors:
S. Hurand,
A. Jouan,
C. Feuillet-Palma,
G. Singh,
J. Biscaras,
E. Lesne,
N. Reyen,
A. Barthelemy,
M. Bibes,
C. Ulysse,
X. Lafosse,
M. Pannetier-Lecoeur,
S. Caprara,
M. Grilli,
J. Lesueur,
N. Bergeal
Abstract:
The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), repr…
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The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements indicate that the Rashba coupling constant increases linearly with electrostatic do**. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.
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Submitted 3 March, 2015;
originally announced March 2015.
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Inhomogeneous multi-carrier superconductivity at LaXO3/SrTiO3 (X=Al or Ti) oxide interfaces
Authors:
S. Caprara,
D. Bucheli,
N. Scopigno,
N. Bergeal,
J. Biscaras,
S. Hurand,
J. Lesueur,
M. Grilli
Abstract:
Several experiments reveal the inhomogeneous character of the superconducting state that occurs when the carrier density of the two-dimensional electron gas formed at the LaXO3/SrTiO3 (X=Al or Ti) interface is tuned above a threshold value by means of gating. Re-analyzing previous measurements, that highlight the presence of two kinds of carriers, with low and high mobility, we shall provide a des…
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Several experiments reveal the inhomogeneous character of the superconducting state that occurs when the carrier density of the two-dimensional electron gas formed at the LaXO3/SrTiO3 (X=Al or Ti) interface is tuned above a threshold value by means of gating. Re-analyzing previous measurements, that highlight the presence of two kinds of carriers, with low and high mobility, we shall provide a description of multi-carrier magneto-transport in an inhomogeneous two-dimensional electron gas, gaining insight into the properties of the physics of the systems under investigation. We shall then show that the measured resistance, superfluid density, and tunneling spectra result from the percolative connection of superconducting "puddles" with randomly distributed critical temperatures, embedded in a weakly localizing metallic matrix. We shall also show that this scenario is consistent with the characteristics of the superconductor-to-metal transition driven by a magnetic field. A multi-carrier description of the superconducting state, within a weak-coupling BCS-like model, will be finally discussed.
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Submitted 26 February, 2015;
originally announced February 2015.
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Multi-band superconductivity and nanoscale inhomogeneity at oxide interfaces
Authors:
S. Caprara,
J. Biscaras,
N. Bergeal,
D. Bucheli,
S. Hurand,
C. Feuillet-Palma,
A. Rastogi,
R. C. Budhani,
J. Lesueur,
M. Grilli
Abstract:
The two-dimensional electron gas at the LaTiO3/SrTiO3 or LaAlO3/SrTiO3 oxide interfaces becomes superconducting when the carrier density is tuned by gating. The measured resistance and superfluid density reveal an inhomogeneous superconductivity resulting from percolation of filamentary structures of superconducting "puddles" with randomly distributed critical temperatures, embedded in a non-super…
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The two-dimensional electron gas at the LaTiO3/SrTiO3 or LaAlO3/SrTiO3 oxide interfaces becomes superconducting when the carrier density is tuned by gating. The measured resistance and superfluid density reveal an inhomogeneous superconductivity resulting from percolation of filamentary structures of superconducting "puddles" with randomly distributed critical temperatures, embedded in a non-superconducting matrix. Following the evidence that superconductivity is related to the appearance of high-mobility carriers, we model intra-puddle superconductivity by a multi-band system within a weak coupling BCS scheme. The microscopic parameters, extracted by fitting the transport data with a percolative model, yield a consistent description of the dependence of the average intra-puddle critical temperature and superfluid density on the carrier density.
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Submitted 10 April, 2013;
originally announced April 2013.
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Multiple Quantum Phase Transitions at the superconducting LaTiO3/SrTiO3 interface
Authors:
J. Biscaras,
N. Bergeal,
S. Hurand,
C. Feuillet-Palma,
A. Rastogi,
R. C. Budhani,
M. Grilli,
S. Caprara,
J. Lesueur
Abstract:
We study the magnetic field driven Quantum Phase Transition (QPT) in electrostatically gated superconducting LaTiO3/SrTiO3 interfaces. Through finite size scaling analysis, we show that it belongs to the (2+1)D XY model universality class. The system can be described as a disordered array of superconducting islands coupled by a two dimensional electron gas (2DEG). Depending on the 2DEG conductance…
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We study the magnetic field driven Quantum Phase Transition (QPT) in electrostatically gated superconducting LaTiO3/SrTiO3 interfaces. Through finite size scaling analysis, we show that it belongs to the (2+1)D XY model universality class. The system can be described as a disordered array of superconducting islands coupled by a two dimensional electron gas (2DEG). Depending on the 2DEG conductance tuned by the gate voltage, the QPT is single (corresponding to the long range phase coherence in the whole array) or double (one related to local phase coherence, the other one to the array). By retrieving the coherence length critical exponent ν, we show that the QPT can be "clean" or "dirty" according to the Harris criteria, depending on whether the phase coherence length is smaller or larger than the island size. The overall behaviour is well described by a theoretical approach of Spivak et al., in the framework of the fermionic scenario of 2D superconducting QPT.
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Submitted 28 September, 2012;
originally announced September 2012.
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Irreversibility and time relaxation in electrostatic do** of oxide interfaces
Authors:
J. Biscaras,
S. Hurand,
C. Feuillet-Palma,
A. Rastogi,
R. C. Budhani,
N. Reyren,
E. Lesne,
D. LeBoeuf,
C. Proust,
J. Lesueur,
N. Bergeal
Abstract:
Two-dimensional electron gas (2DEG) confined in quantum wells at insulating oxide interfaces have attracted much attention as their electronic properties display a rich physics with various electronics orders such as superconductivity and magnetism. A particularly exciting features of these hetero-structures lies in the possibility to control their electronic properties by electrostatic gating, op…
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Two-dimensional electron gas (2DEG) confined in quantum wells at insulating oxide interfaces have attracted much attention as their electronic properties display a rich physics with various electronics orders such as superconductivity and magnetism. A particularly exciting features of these hetero-structures lies in the possibility to control their electronic properties by electrostatic gating, opening up new opportunities for the development of oxide based electronics. However, unexplained gating hysteresis and time relaxation of the 2DEG resistivity have been reported in some bias range, raising the question of the precise role of the gate voltage. Here we show that in LaTiO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures, above a filling threshold, electrons irreversibly escape out of the well. This mechanism, which is directly responsible for the hysteresis and time relaxation, can be entirely described by a simple analytical model derived in this letter. Our results highlight the crucial role of the gate voltage both on the shape and the filling of the quantum well. They also demonstrate that it is possible to achieve a low-carrier density regime in a semiconductor limit, whereas the high-carrier density regime is intrinsically limited.
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Submitted 6 June, 2012;
originally announced June 2012.
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Two-dimensional superconductivity induced by high-mobility carrier do** in LaTiO3/SrTiO3 hetero-structures
Authors:
J. Biscaras,
N. Bergeal,
S. Hurand,
C. Grossetete,
A. Rastogi,
R. C. Budhani,
D. LeBoeuf,
C. Proust,
J. Lesueur
Abstract:
In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic do**. The calculation of the electrons spatial d…
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In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic do**. The calculation of the electrons spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by field effect.
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Submitted 4 June, 2012; v1 submitted 12 December, 2011;
originally announced December 2011.
