Showing 1–8 of 8 results for author: Hunnestad, K

Coexistence of multi-scale domains in ferroelectric polycrystals with non-uniform grain-size distributions

Authors: K. Wolk, R. S. Dragland, E. Chavez Panduro, L. Richarz, Z. Yan, E. Bourret, K. A. Hunnestad, Ch. Tzschaschel, J. Schultheiß, D. Meier

Abstract: Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning the functional properties of ferroelectrics for various applications, ranging from capacitors to future nanoelectronics. Here, we investigate domain formation in poly- and single crystalline improper ferroelectric DyMnO3. We show that a non-uniform grain-size distribution in… ▽ More Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning the functional properties of ferroelectrics for various applications, ranging from capacitors to future nanoelectronics. Here, we investigate domain formation in poly- and single crystalline improper ferroelectric DyMnO3. We show that a non-uniform grain-size distribution in the polycrystals facilitates the coexistence of multi-scale domains, varying by up to one order of magnitude in size. This unusual domain structure originates from an inverted domain-size/grain-size dependence that is intrinsic to the hexagonal manganite polycrystals, expanding previous studies towards non-uniform grain-size distributions. Our results demonstrate that the micrometer-sized grains in DyMnO3 represent individual ferroelectric units with a characteristic domain structure, giving a new dimension to domain engineering in ferroelectric polycrystals with non-uniform microstructures. △ Less

Submitted 9 January, 2024; originally announced January 2024.

Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric

Authors: Michele Conroy, Didrik René Småbråten, Colin Ophus, Konstantin Shapovalov, Quentin M. Ramasse, Kasper Aas Hunnestad, Sverre M. Selbach, Ulrich Aschauer, Kalani Moore, J. Marty Gregg, Ursel Bangert, Massimiliano Stengel, Alexei Gruverman, Dennis Meier

Abstract: Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, we report the disc… ▽ More Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, we report the discovery of antiferroelectric domain walls in the uniaxial ferroelectric Pb$_{5}$Ge$_{3}$O$_{11}$. We resolve highly mobile domain walls with an alternating displacement of Pb atoms, resulting in a cyclic 180$^{\circ}$ flip of dipole direction within the wall. Density functional theory calculations reveal that Pb$_{5}$Ge$_{3}$O$_{11}$ is hyperferroelectric, allowing the system to overcome the depolarization fields that usually suppress antiparallel ordering of dipoles along the longitudinal direction. Interestingly, the antiferroelectric walls observed under the electron beam are energetically more costly than basic head-to-head or tail-to-tail walls. The results suggest a new type of excited domain-wall state, expanding previous studies on ferroelectric domain walls into the realm of antiferroic phenomena. △ Less

Submitted 5 September, 2023; originally announced September 2023.

3D oxygen vacancy order and defect-property relations in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices

Authors: K. A. Hunnestad, H. Das, C. Hatzoglou, M. Holtz, C. M. Brooks, A. T. J. van Helvoort, D. A. Muller, D. G. Schlom, J. A. Mundy, D. Meier

Abstract: Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Her… ▽ More Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Here, we measure the chemical composition in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices, revealing a one-to-one correlation between the distribution of oxygen vacancies and the electric and magnetic properties. Using atom probe tomography, we observe oxygen vacancies arranging in a layered three-dimensional structure with a local density on the order of 10$^{14}$ cm$^{-2}$, congruent with the formula-unit-thick ferrimagnetic LuFe$_2$O$_4$ layers. The vacancy order is promoted by the locally reduced formation energy and plays a key role in stabilizing the ferroelectric domains and ferrimagnetism in the LuFeO$_3$ and LuFe$_2$O$_4$ layers, respectively. The results demonstrate the importance of oxygen vacancies for the room-temperature multiferroicity in this system and establish an approach for quantifying the oxygen defects with atomic-scale precision in 3D, giving new opportunities for deterministic defect-enabled property control in oxide heterostructures. △ Less

Submitted 30 June, 2023; originally announced July 2023.

Imaging and structure analysis of ferroelectric domains, domain walls, and vortices by scanning electron diffraction

Authors: Ursula Ludacka, Jiali He, Shuyu Qin, Manuel Zahn, Emil Frang Christiansen, Kasper A. Hunnestad, Zewu Yan, Edith Bourret, István Kézsmárki, Antonius T. J. van Helvoort, Joshua Agar, Dennis Meier

Abstract: Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent chiral structures and symmetry-breaking distortions that underpin functional properties. Quantifying nanoscale structural features with statistical significanc… ▽ More Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent chiral structures and symmetry-breaking distortions that underpin functional properties. Quantifying nanoscale structural features with statistical significance, however, is complicated by the subtleties of dynamic diffraction and coexisting contrast mechanisms, which often results in low signal-to-noise and the superposition of multiple signals that are challenging to deconvolute. Here we apply scanning electron diffraction to explore local polar distortions in the uniaxial ferroelectric Er(Mn,Ti)O$_3$. Using a custom-designed convolutional autoencoder with bespoke regularization, we demonstrate that subtle variations in the scattering signatures of ferroelectric domains, domain walls, and vortex textures can readily be disentangled with statistical significance and separated from extrinsic contributions due to, e.g., variations in specimen thickness or bending. The work demonstrates a pathway to quantitatively measure symmetry-breaking distortions across large areas, map** structural changes at interfaces and topological structures with nanoscale spatial resolution. △ Less

Submitted 9 May, 2023; originally announced May 2023.

Optimizing compositional and atomic-level information of oxides in atom probe tomography

Authors: Kasper Hunnestad, Constantinos Hatzoglou, Francois Vurpillot, Inger-Emma Nylund, Zewu Yan, Edith Bourret, Antonius. T. J. van Helvoort, Dennis Meier

Abstract: Atom probe tomography (APT) is a 3D analysis technique that offers unique chemical accuracy and sensitivity with sub-nanometer spatial resolution. Recently, there is an increasing interest in the application of APT to complex oxides materials, giving new insight into the relation between local variations in chemical composition and emergent physical properties. However, in contrast to the field of… ▽ More Atom probe tomography (APT) is a 3D analysis technique that offers unique chemical accuracy and sensitivity with sub-nanometer spatial resolution. Recently, there is an increasing interest in the application of APT to complex oxides materials, giving new insight into the relation between local variations in chemical composition and emergent physical properties. However, in contrast to the field of metallurgy, where APT is routinely applied to study materials at the atomic level, complex oxides and their specific field evaporation mechanisms are much less explored. Here, we perform APT measurements on the hexagonal manganite ErMnO3 and systematically study the effect of different experimental parameters on the measured composition and atomic structure. We demonstrate that both the mass resolving power (MRP) and compositional accuracy can be improved by increasing the charge-state ratio (CSR) working at low laser energy (< 5 pJ). Furthermore, we observe a substantial preferential retention of Er atoms, which is suppressed at higher CSRs. We explain our findings based on fundamental field evaporation concepts, expanding the knowledge about the impact of key experimental parameters and the field evaporation process in complex oxides in general. △ Less

Submitted 28 March, 2023; originally announced March 2023.

Quantitative 3D map** of chemical defects at charged grain boundaries in a ferroelectric oxide

Authors: K. A. Hunnestad, J. Schultheiß, A. C. Mathisen, I. Ushakov, C. Hatzoglou, A. T. J. van Helvoort, D. Meier

Abstract: Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls and interfaces in superlattices. Here, we investigate the relation between polar discontinuities and the local chemistry at grain boundaries in polycrystalline fe… ▽ More Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls and interfaces in superlattices. Here, we investigate the relation between polar discontinuities and the local chemistry at grain boundaries in polycrystalline ferroelectric ErMnO3. Using orientation map** and different scanning probe microscopy techniques, we demonstrate that the polycrystalline material develops charged grain boundaries with enhanced electronic conductance. By performing atom probe tomography measurements, we find an enrichment of erbium and a depletion of oxygen at all grain boundaries. The observed compositional changes translate into a charge that exceeds possible polarization-driven effects, demonstrating that structural phenomena rather than electrostatics determine the local chemical composition and related changes in the electronic transport behavior. The study shows that the charged grain boundaries behave distinctly different from charged domain walls, giving additional opportunities for property engineering at polar oxide interfaces. △ Less

Submitted 23 March, 2023; v1 submitted 15 December, 2022; originally announced December 2022.

Correcting for probe wandering by precession path segmentation

Authors: Gregory Nordahl, Lewys Jones, Emil Frang Christiansen, Kasper Aas Hunnestad, Magnus Nord

Abstract: Precession electron diffraction has in the past few decades become a powerful technique for structure solving, strain analysis, and orientation map**, to name a few. One of the benefits of precessing the electron beam, is increased reciprocal space resolution, albeit at a loss of spatial resolution due to an effect referred to as 'probe wandering'. Here, a new methodology of precession path segm… ▽ More Precession electron diffraction has in the past few decades become a powerful technique for structure solving, strain analysis, and orientation map**, to name a few. One of the benefits of precessing the electron beam, is increased reciprocal space resolution, albeit at a loss of spatial resolution due to an effect referred to as 'probe wandering'. Here, a new methodology of precession path segmentation is presented to counteract this effect and increase the resolution in reconstructed virtual images from scanning precession electron diffraction data. By utilizing fast pixelated electron detector technology, multiple frames are recorded for each azimuthal rotation of the beam, allowing for the probe wandering to be corrected in post-acquisition processing. Not only is there an apparent increase in the resolution of the reconstructed images, but probe wandering due to instrument misalignment is reduced, potentially easing an already difficult alignment procedure. △ Less

Submitted 21 November, 2022; originally announced November 2022.

Atomic-scale 3D imaging of individual dopant atoms in a complex oxide

Authors: K. A. Hunnestad, C. Hatzoglou, Z. M. Khalid, P. E. Vullum, Z. Yan, E. Bourret, A. T. J. van Helvoort, S. M. Selbach, D. Meier

Abstract: A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical do** controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent electric and magnetic phenomena in oxides. Imaging of individual dopant atoms in lightly doped systems, however, remains a major challenge, hindering characterizati… ▽ More A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical do** controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent electric and magnetic phenomena in oxides. Imaging of individual dopant atoms in lightly doped systems, however, remains a major challenge, hindering characterization of the site-specific effects and local dopant concentrations that determine the atomic-scale physics. Here, we apply atom-probe tomography (APT) to resolve individual Ti atoms in the narrow band gap semiconductor ErMnO3 with a nominal proportion of 0.04 atomic percent. Our 3D imaging measures the Ti concentration at the unit cell level, providing quantitative information about the dopant distribution within the ErMnO3 crystal lattice. High-resolution APT maps reveal the 3D lattice position of individual Ti atoms, showing that they are located within the Mn layers with no signs of clustering or other chemical inhomogeneities. The 3D atomic-scale visualization of individual dopant atoms provides new opportunities for the study of local structure-property relations in complex oxides, representing an important step toward controlling dopant-driven quantum phenomena in next-generation oxide electronics. △ Less

Submitted 30 October, 2021; originally announced November 2021.