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Engineering of Niobium Surfaces Through Accelerated Neutral Atom Beam Technology For Quantum Applications
Authors:
Soumen Kar,
Conan Weiland,
Chenyu Zhou,
Ekta Bhatia,
Brian Martinick,
Jakub Nalaskowski,
John Mucci,
Stephen Olson,
Pui Yee Hung,
Ilyssa Wells,
Hunter Frost,
Corbet S. Johnson,
Thomas Murray,
Vidya Kaushik,
Sean Kirkpatrick,
Kiet Chau,
Michael J. Walsh,
Mingzhao Liu,
Satyavolu S. Papa Rao
Abstract:
A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontr…
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A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages Accelerated Neutral Atom Beam (ANAB) technology at 300 mm wafer scale. This ANAB beam is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 nm to 6 nm depending on ANAB process parameters. Modeling of variable-energy XPS data confirm thickness and compositional control of the Nb surface oxide by the ANAB process. These results correlate well with those from transmission electron microscopy and X-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times.
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Submitted 27 February, 2023;
originally announced February 2023.
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Chemical Mechanical Planarization for Ta-based Superconducting Quantum Devices
Authors:
Ekta Bhatia,
Soumen Kar,
Jakub Nalaskowski,
Tuan Vo,
Stephen Olson,
Hunter Frost,
John Mucci,
Brian Martinick,
Pui Yee Hung,
Ilyssa Wells,
Sandra Schujman,
Satyavolu S. Papa Rao
Abstract:
We report on the development of a chemical mechanical planarization (CMP) process for thick damascene Ta structures with pattern feature sizes down to 100 nm. This CMP process is the core of the fabrication sequence for scalable superconducting integrated circuits at 300 mm wafer scale. This work has established the elements of the various CMP-related design rules that can be followed by a designe…
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We report on the development of a chemical mechanical planarization (CMP) process for thick damascene Ta structures with pattern feature sizes down to 100 nm. This CMP process is the core of the fabrication sequence for scalable superconducting integrated circuits at 300 mm wafer scale. This work has established the elements of the various CMP-related design rules that can be followed by a designer for the layout of circuits that include Ta-based coplanar waveguide resonators, capacitors, and interconnects for tantalum-based qubits and single flux quantum (SFQ) circuits. The fabrication of these structures utilizes 193 nm optical lithography, along with 300 mm process tools for dielectric deposition, reactive ion etch, wet-clean, CMP and in-line metrology, all tools typical for a 300 mm wafer CMOS foundry. Process development was guided by measurements of physical and electrical characteristics of the planarized structures. Physical characterization such as atomic force microscopy across the 300 mm wafer surface showed local topography was less than 5 nm. Electrical characterization confirmed low leakage at room temperature, and less than 12% within wafer sheet resistance variation, for damascene Ta line-widths ranging from 100 nm to 3 μm. Run-to-run reproducibility was also evaluated. Effects of process integration choices including deposited thickness of Ta are discussed.
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Submitted 15 February, 2023; v1 submitted 15 February, 2023;
originally announced February 2023.
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Atomic-Scale Defect Detection by Nonlinear Light Scattering and Localization
Authors:
Farbod Shafiei,
Tommaso Orzali,
Alexey Vert,
Mohammad-Ali Miri,
P. Y. Hung,
Man Hoi Wong,
Andrea Alù,
Gennadi Bersuker,
Michael C. Downer
Abstract:
Hetero-epitaxial crystalline films underlie many electronic and optical technologies but are prone to forming defects at their hetero-interfaces. Atomic-scale defects such as threading dislocations that propagate into a film impede the flow of charge carriers and light degrading electrical-optical performance of devices. Diagnosis of subsurface defects traditionally requires time consuming invasiv…
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Hetero-epitaxial crystalline films underlie many electronic and optical technologies but are prone to forming defects at their hetero-interfaces. Atomic-scale defects such as threading dislocations that propagate into a film impede the flow of charge carriers and light degrading electrical-optical performance of devices. Diagnosis of subsurface defects traditionally requires time consuming invasive techniques such as cross sectional transmission electron microscopy. Using III-V films grown on Si, we have demonstrated noninvasive, bench-top diagnosis of sub-surface defects by optical second-harmonic scanning probe microscope. We observed a high-contrast pattern of sub-wavelength hot spots caused by scattering and localization of fundamental light by defect scattering sites. Size of these observed hotspots are strongly correlated to the density of dislocation defects. Our results not only demonstrate a global and versatile method for diagnosing sub-surface scattering sites but uniquely elucidate optical properties of disordered media. An extension to third harmonics would enable irregularities detection in non-X(2) materials making the technique universally applicable.
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Submitted 2 August, 2020; v1 submitted 2 July, 2020;
originally announced July 2020.
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Chloride Molecular Do** Technique on 2D Materials: WS2 and MoS2
Authors:
Lingming Yang,
Kausik Majumdar,
Han Liu,
Yuchen Du,
Heng Wu,
Michael Hatzistergos,
P. Y. Hung,
Robert Tieckelmann,
Wilman Tsai,
Chris Hobbs,
Peide D. Ye
Abstract:
Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular do** technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After do**, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant r…
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Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular do** technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After do**, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron do** density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This do** technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.
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Submitted 9 October, 2014;
originally announced October 2014.
