Showing 1–4 of 4 results for author: Hulbert, S L

Ultrathin Magnesium-based Coating as an Efficient Oxygen Barrier for Superconducting Circuit Materials

Authors: Chenyu Zhou, Junsik Mun, Juntao Yao, Aswin kumar Anbalagan, Mohammad D. Hossain, Russell A. McLellan, Ruoshui Li, Kim Kisslinger, Gengnan Li, Xiao Tong, Ashley R. Head, Conan Weiland, Steven L. Hulbert, Andrew L. Walter, Qiang Li, Yimei Zhu, Peter V. Sushko, Mingzhao Liu

Abstract: Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately… ▽ More Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) cap** layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg cap**, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the cap** layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems. △ Less

Submitted 25 September, 2023; v1 submitted 21 September, 2023; originally announced September 2023.

Chemical profiles of the oxides on tantalum in state of the art superconducting circuits

Authors: Russell A. McLellan, Aveek Dutta, Chenyu Zhou, Yichen Jia, Conan Weiland, Xin Gui, Alexander P. M. Place, Kevin D. Crowley, Xuan Hoang Le, Trisha Madhavan, Youqi Gang, Lukas Baker, Ashley R. Head, Iradwikanari Waluyo, Ruoshui Li, Kim Kisslinger, Adrian Hunt, Ignace Jarrige, Stephen A. Lyon, Andi M. Barbour, Robert J. Cava, Andrew A. Houck, Steven L. Hulbert, Mingzhao Liu, Andrew L. Walter , et al. (1 additional authors not shown)

Abstract: Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently… ▽ More Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently showed that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, we study the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS). We identify the different oxidation states of tantalum that are present in the native oxide resulting from exposure to air, and we measure their distribution through the depth of the film. Furthermore, we show how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. By correlating these measurements with detailed measurements of quantum devices, we can improve our understanding of the microscopic device losses. △ Less

Submitted 20 January, 2023; v1 submitted 11 January, 2023; originally announced January 2023.

Measurement of the background in Auger-photoemission coincidence spectra (APECS) associated with inelastic or multi-electron valence band photoemission processes

Authors: S. Satyal, P. V. Joglekar, K. Shastry, S. Kalaskar, Q. Dong, S. L. Hulbert, R. A. Bartynksi, A. H. Weiss

Abstract: Auger Photoelectron Coincidence Spectroscopy (APECS), in which the Auger spectra is measured in coincidence with the core level photoelectron, is capable of pulling difficult to observe low energy Auger peaks out of a large background due mostly to inelastically scattered valence band (VB) photoelectrons. However the APECS method alone cannot eliminate the background due to valence band photoemiss… ▽ More Auger Photoelectron Coincidence Spectroscopy (APECS), in which the Auger spectra is measured in coincidence with the core level photoelectron, is capable of pulling difficult to observe low energy Auger peaks out of a large background due mostly to inelastically scattered valence band (VB) photoelectrons. However the APECS method alone cannot eliminate the background due to valence band photoemission processes in which the initial photon energy is shared by two or more electrons and one of the electrons is in the energy range of the core level photoemission peak. Here we describe an experimental method to determine the contributions from these background processes and apply this method in the case of Copper M3VV Auger spectrum obtained in coincidence with the 3p3/2 photoemission peak. A beam of 200 eV photons was incident on a Cu(100) sample and a series of coincidence measurements were performed using a spectrometer equipped with two cylindrical mirror analyzers (CMAs). One CMA was set at series of fixed energies that ranged between the energy of the core and the VB peaks. The other CMA was scanned over a range corresponding to electrons leaving the surface between 0eV and 70eV. The set of measured spectra were then fit to a parameterized function which was extrapolated to determine the background in the APECS spectra due to multi-electron and inelastic VB photoemission processes. The extrapolated background was subtracted from the APECS spectrum to obtain the spectrum of electrons emitted solely as the result of the Auger process. A comparison of the coincidence spectrum with the same spectrum with background removed shows that in the case of Cu M3VV the background due to the inelastic scattering of VB electrons is negligible in the region of the Auger peak but is more than half the total signal down in the low energy tail of the Auger peak. △ Less

Submitted 28 May, 2014; v1 submitted 7 April, 2014; originally announced April 2014.

Comments: 9 Pages, 3 figures and 1 table (Accepted for publication at Journal of Electron Spectroscopy and Related Phenomena, JESRP)

Many-body Effects in Angle-resolved Photoemission: Quasiparticle Energy and Lifetime of a Mo(110) Surface State

Authors: T. Valla, A. V. Fedorov, P. D. Johnson, S. L. Hulbert

Abstract: In a high-resolution photoemission study of a Mo(110) surface state various contributions to the measured width and energy of the quasiparticle peak are investigated. Electron-phonon coupling, electron-electron interactions and scattering from defects are all identified mechanisms responsible for the finite lifetime of a valence photo-hole. The electron-phonon induced mass enhancement and rapid… ▽ More In a high-resolution photoemission study of a Mo(110) surface state various contributions to the measured width and energy of the quasiparticle peak are investigated. Electron-phonon coupling, electron-electron interactions and scattering from defects are all identified mechanisms responsible for the finite lifetime of a valence photo-hole. The electron-phonon induced mass enhancement and rapid change of the photo-hole lifetime near the Fermi level are observed for the first time. △ Less

Submitted 11 May, 1999; v1 submitted 30 April, 1999; originally announced April 1999.

Comments: RevTEX, 4 pages, 4 figures, to be published in PRL

Report number: BNL-66198

Journal ref: Phys. Rev. Lett. 83, 2085 (1999)