Showing 1–10 of 10 results for author: Huffaker, D L

Room-Temperature Quantum Emitter in Aluminum Nitride

Authors: Sam G. Bishop, John P. Hadden, Faris D. Alzahrani, Reza Hekmati, Diana L. Huffaker, Wolfgang W. Langbein, Anthony J. Bennett

Abstract: A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep with… ▽ More A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright ($>10^5$ counts per second), pure ($g^{(2)}(0) < 0.2$), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor. △ Less

Submitted 3 August, 2022; originally announced August 2022.

Journal ref: ACS Photonics 2020, 7, 7, 1636-1641

Integrated and Spectrally Selective Thermal Emitters Enabled by Layered Metamaterials

Authors: Yongkang Gong, Kang Li, Nigel Copner, Heng Liu, Meng Zhao, Bo Zhang, Andreas Pusch, Diana L. Huffaker, Sang Soon Oh

Abstract: Nanophotonic engineering of light-matter interaction at subwavelength scale allows thermal radiation that is fundamentally different from that of traditional thermal emitters and provides exciting opportunities for various thermal-photonic applications. We propose a new kind of integrated and electrically controlled thermal emitter that exploits layered metamaterials with lithography-free and diel… ▽ More Nanophotonic engineering of light-matter interaction at subwavelength scale allows thermal radiation that is fundamentally different from that of traditional thermal emitters and provides exciting opportunities for various thermal-photonic applications. We propose a new kind of integrated and electrically controlled thermal emitter that exploits layered metamaterials with lithography-free and dielectric/metallic nanolayers. We demonstrate both theoretically and experimentally that the proposed concept can create a strong photonic bandgap in the visible regime and allow small impedance mismatch at the infrared wavelengths, which gives rise to optical features of significantly enhanced emissivity at the broad infrared wavelengths of 1.4-14 um as well as effectively suppressed emissivity in the visible region. The electrically driven metamaterial devices are optically and thermally stable at temperature up to ~800 K with electro-optical conversion efficiency reaching ~30%. We believe that the proposed high efficiency thermal emitters will pave the way towards integrated infrared light source platforms for various thermal-photonic applications and particularly provide a novel alternative for cost-effective, compact, low glare, and energy-efficient infrared heating. △ Less

Submitted 28 August, 2020; originally announced August 2020.

Topological Insulator Laser Using Valley-Hall Photonic Crystals

Authors: Yongkang Gong, Stephan Wong, Anthony J. Bennett, Diana L. Huffaker, Sang Soon Oh

Abstract: Topological photonics has recently been proved a robust framework for manipulating light. Active topological photonic systems, in particular, enable richer fundamental physics by employing nonlinear light-matter interactions, thereby opening a new landscape for applications such as topological lasing. Here we report an all-dielectric topological insulator laser scheme based on semiconductor caviti… ▽ More Topological photonics has recently been proved a robust framework for manipulating light. Active topological photonic systems, in particular, enable richer fundamental physics by employing nonlinear light-matter interactions, thereby opening a new landscape for applications such as topological lasing. Here we report an all-dielectric topological insulator laser scheme based on semiconductor cavities formed by topologically distinct Kagome photonic crystals. The proposed planar semiconductor Kagome lattice allows broadband edge states below the light line due to photonic valley hall effect in telecommunication region, which provides a new route to retrieve nontrivial photonic topology and to develop integrated topological systems for robust light generation and transport. △ Less

Submitted 10 January, 2020; originally announced January 2020.

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

Authors: M. Delmas, D. C. M. Kwan, M. C. Debnath, B. L. Liang, D. L. Huffaker

Abstract: In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing SL) is explored and investigated from the growth to the device performance. First, several samples with different SL period composition and thickness are grown by molecular beam epitaxy. Nearly strain-compensated SLs on GaSb exhibiting an energy band gap between 105 to 169 meV at 77K are obtained. Secon… ▽ More In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing SL) is explored and investigated from the growth to the device performance. First, several samples with different SL period composition and thickness are grown by molecular beam epitaxy. Nearly strain-compensated SLs on GaSb exhibiting an energy band gap between 105 to 169 meV at 77K are obtained. Second, from electronic band structure calculation, material parameters are extracted and compared for the different grown SLs. Finally, two p-i-n device structures with different SL periods are grown and their electrical performance compared. Our investigation shows that an alternative SL design could potentially be used to improve the device performance of diffusion-limited devices for long-wavelength infrared detection. △ Less

Submitted 20 August, 2019; originally announced August 2019.

Comments: 8 Figures

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

Authors: M. Delmas, M. C. Debnath, B. L. Liang, D. L. Huffaker

Abstract: This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been explored during the growth. The first one consists of growing an intentional InSb layer at both interfaces (namely GaSb-on-InAs and InAs-on-GaSb interfaces) by m… ▽ More This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been explored during the growth. The first one consists of growing an intentional InSb layer at both interfaces (namely GaSb-on-InAs and InAs-on-GaSb interfaces) by migration enhanced epitaxy while the second uses the antimony-for-arsenic exchange to promote an InSb-like interface at the GaSb-on-InAs interface. SLs obtained via both methods are compared in terms of structural, morphological and optical properties by means of high-resolution x-ray diffraction, atomic force microscopy and photoluminescence spectroscopy. By using the second method, we obtained a nearly strain-compensated SL on GaSb with a full width at half maximum of 56 arcsec for the first-order SL satellite peak. Relatively smooth surface has been achieved with a root mean square value of about 0.19 nm on a 2 $μm$ x 2 $μm$ scan area. Finally, a p-i-n device structure having a cut-off wavelength of 5.15 $μm$ at 77K has been demonstrated with a dark-current level of $8.3 * 10^{-8} A/cm^2$ at -50 mV and a residual carrier concentration of $9.7 * 10^{14} cm^{-3}$, comparable to the state-of-the-art. △ Less

Submitted 2 August, 2019; originally announced August 2019.

Comments: 8 figures

Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature

Authors: Hyunseok Kim, Wook-Jae Lee, Alan C. Farrell, Pradeep Senanayake, Diana L. Huffaker

Abstract: Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and the capability to grow directly on lattice-mismatched silicon substrates. Although there have been remarkable advances in nanowire-based em… ▽ More Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and the capability to grow directly on lattice-mismatched silicon substrates. Although there have been remarkable advances in nanowire-based emitters, their practical applications are still in the early stages due to the difficulties in integrating nanowire emitters with photonic integrated circuits (PICs). Here, we demonstrate for the first time optically pumped III-V nanowire array lasers monolithically integrated on silicon-on-insulator (SOI) platform. Selective-area growth of purely single-crystalline InGaAs/InGaP core/shell nanowires on an SOI substrate enables the nanowire array to form a photonic crystal nanobeam cavity with superior optical and structural properties, resulting in the laser to operate at room temperature. We also show that the nanowire array lasers are effectively coupled with SOI waveguides by employing nanoepitaxy on a pre-patterned SOI platform. These results represent a new platform for ultra-compact and energy-efficient optical links, and unambiguously point the way toward practical and functional nanowire lasers. △ Less

Submitted 10 January, 2017; originally announced January 2017.

Strongly coupled slow-light polaritons in one-dimensional disordered localized states

Authors: Jie Gao, Sylvain Combrie, Baolai Liang, Peter Schmitteckert, Gaelle Lehoucq, Stephane Xavier, Xinan Xu, Kurt Busch, Diana L. Huffaker, Alfredo De Rossi, Chee Wei Wong

Abstract: Cavity quantum electrodynamics advances the coherent control of a single quantum emitter with a quantized radiation field mode, typically piecewise engineered for the highest finesse and confinement in the cavity field. This enables the possibility of strong coupling for chip-scale quantum processing, but till now is limited to few research groups that can achieve the precision and deterministic r… ▽ More Cavity quantum electrodynamics advances the coherent control of a single quantum emitter with a quantized radiation field mode, typically piecewise engineered for the highest finesse and confinement in the cavity field. This enables the possibility of strong coupling for chip-scale quantum processing, but till now is limited to few research groups that can achieve the precision and deterministic requirements for these polariton states. Here we observe for the first time coherent polariton states of strong coupled single quantum dot excitons in inherently disordered one-dimensional localized modes in slow-light photonic crystals. Large vacuum Rabi splittings up to 311 μeV are observed, one of the largest avoided crossings in the solid-state. Our tight-binding models with quantum impurities detail these strong localized polaritons, spanning different disorder strengths, complementary to model-extracted pure dephasing and incoherent pum** rates. Such disorder-induced slow-light polaritons provide a platform towards coherent control, collective interactions, and quantum information processing. △ Less

Submitted 9 June, 2013; originally announced June 2013.

Comments: 17 pages, 5 figures and supplementary information

The Dependence of Alloy Composition of InGaAs Inserts in GaAs Nanopillars on Selective-Area Pattern Geometry

Authors: Joshua Shapiro, Adam C. Scofield, Andrew Lin, Nicholas Benzoni, Giacomo Mariani, Diana L. Huffaker

Abstract: GaAs nanopillars with 150 nm - 200 nm long axial InGaAs inserts are grown by MOCVD via catalyst-free selective-area-epitaxy (SAE). The alloy composition of the InGaAs region, as determined by room-temperature photoluminescence (PL), depends critically on the pitch and diameter of the selective-area pattern geometry. The PL emission varies based on pattern geometry from 1.0 \{mu}m to 1.25 \{mu}m co… ▽ More GaAs nanopillars with 150 nm - 200 nm long axial InGaAs inserts are grown by MOCVD via catalyst-free selective-area-epitaxy (SAE). The alloy composition of the InGaAs region, as determined by room-temperature photoluminescence (PL), depends critically on the pitch and diameter of the selective-area pattern geometry. The PL emission varies based on pattern geometry from 1.0 \{mu}m to 1.25 \{mu}m corresponding to a In to Ga ratio from 0.15 to > 0.3. This In enrichment is explained by a pattern dependent change in the incorporation rate for In and Ga. Capture coefficients for Ga and In adatoms are calculated for each pattern pitch. As the pitch decreases, these data reveal a contest between a synergetic effect (related to nanopillar density) that increases the growth rate and a competition for available material that limits the growth rate. Gallium is more susceptible to both of these effects, causing the observed changes in alloy composition. △ Less

Submitted 15 May, 2013; originally announced May 2013.

Ab-Initio calculations of binding energy of In and Ga adatoms on three GaAs(111)A surface reconstructions

Authors: J. N. Shapiro, D. L. Huffaker, C. Ratsch

Abstract: Calculations of the potential energy surface for tracer Ga and In adatoms above three GaAs (111)A surface reconstructions are presented in order to understand the growth conditions required to form axial heterostructures in GaAs/InGaAs nano-pillars. In all calculations the Ga adatom has a stronger bond energy to the surface than the In adatom. The diffusion barriers for Ga adatoms are 140meV large… ▽ More Calculations of the potential energy surface for tracer Ga and In adatoms above three GaAs (111)A surface reconstructions are presented in order to understand the growth conditions required to form axial heterostructures in GaAs/InGaAs nano-pillars. In all calculations the Ga adatom has a stronger bond energy to the surface than the In adatom. The diffusion barriers for Ga adatoms are 140meV larger than for In adatoms on the Ga vacancy surface, but they are comparable on the As trimer surface. Also the binding energy for an In adatom is closer to that of a Ga adatom on the As trimer surface. We conclude that the As trimer surface is preferable for adsorption of In and thus for selective formation of hetero-interfaces on (111) facets. This work helps explain the recent successful formation of axial GaAs/InGaAs hetero-interfaces in catalyst free nano-pillars. △ Less

Submitted 9 February, 2011; originally announced February 2011.

Comments: 4 pages, 5 figures, 1 table

Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires

Authors: Aaron M. Katzenmeyer, François Léonard, A. Alec Talin, **-Show Wong, Diana L. Huffaker

Abstract: We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them inordinately resistive. By measuring sufficiently high aspect-ratio nanowires individually in situ, we decouple the role of the contacts and show that this sem… ▽ More We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them inordinately resistive. By measuring sufficiently high aspect-ratio nanowires individually in situ, we decouple the role of the contacts and show that this semi-insulating electrical behavior is the result of trap-mediated carrier transport. We observe Poole-Frenkel transport that crosses over to phonon-assisted tunneling at higher fields, with a tunneling time found to depend predominantly on fundamental physical constants as predicted by theory. By using in situ electron beam irradiation of individual nanowires we probe the nanowire electronic transport when free carriers are made available, thus revealing the nature of the contacts. △ Less

Submitted 28 October, 2010; originally announced October 2010.