Showing 1–50 of 101 results for author: Hueso, L

Symmetry Origin and Microscopic Mechanism of Electrical Magnetochiral Anisotropy in Tellurium

Authors: Manuel Suárez-Rodríguez, Beatriz Martín-García, Francesco Calavalle, Stepan S. Tsirkin, Ivo Souza, Fernando De Juan, Albert Fert, Marco Gobbi, Luis E. Hueso, Fèlix Casanova

Abstract: Non-linear transport effects in response to external magnetic fields, i.e. electrical magnetochiral anisotropy (eMChA), have attracted much attention for their importance to study quantum and spin-related phenomena. Indeed, they have permitted the exploration of topological surface states and charge-to-spin conversion processes in low-symmetry systems. Nevertheless, despite the inherent correlatio… ▽ More Non-linear transport effects in response to external magnetic fields, i.e. electrical magnetochiral anisotropy (eMChA), have attracted much attention for their importance to study quantum and spin-related phenomena. Indeed, they have permitted the exploration of topological surface states and charge-to-spin conversion processes in low-symmetry systems. Nevertheless, despite the inherent correlation between the symmetry of the material under examination and its non-linear transport characteristics, there is a lack of experimental demonstration to delve into this relationship and to unveil their microscopic mechanisms. Here, we study eMChA in chiral elemental Tellurium (Te) along different crystallographic directions, establishing the connection between the different eMChA components and the crystal symmetry of Te. We observed different longitudinal eMChA components with collinear current and magnetic field, demonstrating experimentally the radial angular momentum texture of Te. We also measured a transverse non-linear resistance which, as the longitudinal counterpart, scales bilinearly with current and magnetic fields, illustrating that they are different manifestations of the same effect. Finally, we study the scaling law of the eMChA, evidencing that extrinsic scattering from dynamic sources is the dominant microscopic mechanism. These findings underscore the efficacy of symmetry-based investigations in understanding and predicting non-linear transport phenomena, with potential applications in spintronics and energy harvesting. △ Less

Submitted 25 June, 2024; originally announced June 2024.

Comments: 8 pages, 4 figures, and Supplemental Material

Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Authors: C. K. Safeer, Paul S. Keatley, Witold Skowroński, Jakub Mojsiejuk, Kay Yakushiji, Akio Fukushima, Shinji Yuasa, Daniel Bedau, Fèlix Casanova, Luis E. Hueso, Robert J. Hicken, Daniele Pinna, Gerrit van der Laan, Thorsten Hesjedal

Abstract: Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using time-resolved magneto-optical Kerr effect technique. In… ▽ More Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using time-resolved magneto-optical Kerr effect technique. In our device operating at gigahertz frequencies, we find a large displacement current of the order of mA's, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high frequency magnetotransport techniques. △ Less

Submitted 9 May, 2024; originally announced May 2024.

Tailoring Photoluminescence by Strain-Engineering in Layered Perovskite Flakes

Authors: Davide Spirito, María Barra-Burillo, Francesco Calavalle, Costanza Lucia Manganelli, Marco Gobbi, Rainer Hillenbrand, Fèlix Casanova, Luis E. Hueso, Beatriz Martín-García

Abstract: Strain is an effective strategy to modulate the optoelectronic properties of 2D materials, but it has been almost unexplored in layered hybrid organic-inorganic metal halide perovskites (HOIPs) due to their complex band structure and mechanical properties. Here, we investigate the temperature-dependent microphotoluminescence (PL) of 2D $(C_6H_5CH_2CH_2NH_3)_2Cs_3Pb_4Br_{13}$ HOIP subject to biaxia… ▽ More Strain is an effective strategy to modulate the optoelectronic properties of 2D materials, but it has been almost unexplored in layered hybrid organic-inorganic metal halide perovskites (HOIPs) due to their complex band structure and mechanical properties. Here, we investigate the temperature-dependent microphotoluminescence (PL) of 2D $(C_6H_5CH_2CH_2NH_3)_2Cs_3Pb_4Br_{13}$ HOIP subject to biaxial strain induced by a $SiO_2$ ring platform on which flakes are placed by viscoelastic stam**. At 80 K, we found that a strain of <1% can change the PL emission from a single peak (unstrained) to three well-resolved peaks. Supported by micro-Raman spectroscopy, we show that the thermomechanically generated strain modulates the bandgap due to changes in the octahedral tilting and lattice expansion. Mechanical simulations demonstrate the coexistence of tensile and compressive strain along the flake. The observed PL peaks add an interesting feature to the rich phenomenology of photoluminescence in 2D HOIPs, which can be exploited in tailored sensing and optoelectronic devices. △ Less

Submitted 21 April, 2024; originally announced April 2024.

Comments: 4 figures

Journal ref: Nano Lett. 2022, 22 (10), 4153-4160

Magnetic properties of layered hybrid organic-inorganic metal-halide perovskites: transition metal, organic cation and perovskite phase effects

Authors: Yaiza Asensio, Sergio Marras, Davide Spirito, Marco Gobbi, Mihail Ipatov, Fèlix Casanova, Aurelio Mateo-Alonso, Luis E. Hueso, Beatriz Martín-García

Abstract: Understanding the structural and magnetic properties in layered hybrid organic-inorganic metal halide perovskites (HOIPs) is key for their design and integration in spin-electronic devices. Here, we have conducted a systematic study on ten compounds to understand the effect of the transition metal (Cu$^{2+}$, Mn$^{2+}$, Co$^{2+}$), organic spacer (alkyl- and aryl-ammonium) and perovskite phase (Ru… ▽ More Understanding the structural and magnetic properties in layered hybrid organic-inorganic metal halide perovskites (HOIPs) is key for their design and integration in spin-electronic devices. Here, we have conducted a systematic study on ten compounds to understand the effect of the transition metal (Cu$^{2+}$, Mn$^{2+}$, Co$^{2+}$), organic spacer (alkyl- and aryl-ammonium) and perovskite phase (Ruddlesden-Popper and Dion-Jacobson) on the properties of these materials. Temperature-dependent Raman measurements show that the crystals' structural phase transitions are triggered by the motional freedom of the organic cations as well as by the flexibility of the inorganic metal-halide lattice. In the case of Cu$^{2+}$ HOIPs, an increase of the in-plane anisotropy and a reduction of the octahedra interlayer distance is found to change the behavior of the HOIP from that of a 2D ferromagnet to that of a quasi-3D antiferromagnet. Mn$^{2+}$ HOIPs show inherent antiferromagnetic octahedra intralayer interactions and a phenomenologically rich magnetism, presenting spin-canting, spin-flop transitions and metamagnetism controlled by the crystal anisotropy. Co$^{2+}$ crystals with non-linked tetrahedra show a dominant paramagnetic behavior irrespective of the organic spacer and the perovskite phase. This work demonstrates that the chemical flexibility of HOIPs can be exploited to develop novel layered magnetic materials with tailored magnetic properties. △ Less

Submitted 20 April, 2024; originally announced April 2024.

Comments: 5 figures

Journal ref: Adv. Funct. Mater. 2022, 32, 2207988

Percolating Superconductivity in Air-Stable Organic-Ion Intercalated MoS2

Authors: Jose M. Pereira, Daniel Tezze, Iris Niehues, Yaiza Asensio, Haozhe Yang, Lars Mester, Shu Chen, Felix Casanova, Alexander M. Bittner, Maider Ormaza, Frederik Schiller, Beatriz Martin-Garcia, Rainer Hillenbrand, Luis E. Hueso, Marco Gobbi

Abstract: When doped into a certain range of charge carrier concentrations, MoS2 departs from its pristine semiconducting character to become a strongly correlated material characterized by exotic phenomena such as charge density waves or superconductivity. However, the required do** levels are typically achieved using ionic-liquid gating or air-sensitive alkali-ion intercalation, which are not compatible… ▽ More When doped into a certain range of charge carrier concentrations, MoS2 departs from its pristine semiconducting character to become a strongly correlated material characterized by exotic phenomena such as charge density waves or superconductivity. However, the required do** levels are typically achieved using ionic-liquid gating or air-sensitive alkali-ion intercalation, which are not compatible with standard device fabrication processes. Here, we report on the emergence of superconductivity and a charge density wave phase in air-stable organic cation intercalated MoS2 crystals. By selecting two different molecular guests, we show that these correlated electronic phases depend dramatically on the intercalated cation, demonstrating the potential of organic ion intercalation to finely tune the properties of 2D materials. Moreover, we find that a fully developed zero-resistance state is not reached in few-nm-thick flakes, indicating the presence of three-dimensional superconductive paths which are severed by the mechanical exfoliation. We ascribe this behavior to an inhomogeneous charge carrier distribution, which we probe at the nanoscale using scanning near-field optical microscopy. Our results establish organic-ion intercalated MoS2 as a platform to study the emergence and modulation of correlated electronic phases. △ Less

Submitted 27 February, 2024; originally announced February 2024.

Journal ref: J Adv. Funct. Mater. 2022, 32, 2208761

Control of charge-spin interconversion in van der Waals heterostructures with chiral charge density waves

Authors: Zhendong Chi, Seungjun Lee, Haozhe Yang, Eoin Dolan, C. K. Safeer, Josep Ingla-Aynés, Franz Herling, Nerea Ontoso, Beatriz Martín-García, Marco Gobbi, Tony Low, Luis E. Hueso, Fèlix Casanova

Abstract: A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low-dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its relationship with functional phenomena remains relatively limited. Here, we show an unprecedented demonstration of a tunable charge-spin inte… ▽ More A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low-dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its relationship with functional phenomena remains relatively limited. Here, we show an unprecedented demonstration of a tunable charge-spin interconversion (CSI) in graphene/1T-TaS$_2$ van der Waals heterostructures by manipulating the distinct CDW phases in 1T-TaS$_2$. Whereas CSI from spins polarized in all three directions are observed in the heterostructure when the CDW phase does not show commensurability, the output of one of the components disappears and the other two are enhanced when the CDW phase becomes commensurate. The experimental observation is supported by first-principles calculations, which evidence that chiral CDW multidomains are at the origin of the switching of CSI. Our results uncover a new approach for on-demand CSI in low-dimensional systems, paving the way for advanced spin-orbitronic devices. △ Less

Submitted 24 June, 2024; v1 submitted 16 January, 2024; originally announced January 2024.

Comments: Funding information: Marie Sklodowska-Curie Actions, H2020-MSCA-ITN-2020; Project Acronym SPEAR; Grant Agreement No. 955671

Twist-angle tunable spin texture in WSe$_2$/graphene van der Waals heterostructures

Authors: Haozhe Yang, Beatriz Martín-García, Jozef Kimák, Eva Schmoranzerová, Eoin Dolan, Zhendong Chi, Marco Gobbi, Petr Němec, Luis E. Hueso, Fèlix Casanova

Abstract: Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, although an experimental verification is missing. Here, we demonstrate the tunability of the spin texture and associated spin-charge interconversion… ▽ More Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, although an experimental verification is missing. Here, we demonstrate the tunability of the spin texture and associated spin-charge interconversion with twist angle in WSe$_2$/graphene heterostructures by using spin precession experiments. For specific twist angles, we experimentally detect a spin component radial with the electron's momentum, in addition to the standard orthogonal component. Our results show that the helicity of the spin texture can be reversed by angle twisting, highlighting its critical role on the spin-orbit properties of WSe$_2$/graphene heterostructures and paving the way for the development of novel spin-twistronic devices. △ Less

Submitted 15 December, 2023; originally announced December 2023.

Comments: 14 pages, 5 figures and Supplementary Information

Odd non-linear conductivity under spatial inversion in chiral Tellurium

Authors: Manuel Suárez-Rodríguez, Beatriz Martín-García, Witold Skowroński, F. Calavalle, Stepan S. Tsirkin, Ivo Souza, Fernando De Juan, Andrey Chuvilin, Albert Fert, Marco Gobbi, Fèlix Casanova, Luis E. Hueso

Abstract: Electrical transport in non-centrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a non-linear conductivity emerges along specific crystallographic directions. This non-linear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an in… ▽ More Electrical transport in non-centrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a non-linear conductivity emerges along specific crystallographic directions. This non-linear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an inversion symmetry operation on the non-linear conductivity remain to be explored. Here, we report on a large, non-linear conductivity in chiral Tellurium. By measuring samples with opposite handedness, we demonstrate that the non-linear transport is odd under spatial inversion. Furthermore, by applying an electrostatic gate, we modulate the non-linear output by a factor of 300, reaching the highest reported value excluding engineered heterostructures. Our results establish chiral Te as an ideal compound not just to study the fundamental interplay between crystal structure, symmetry operations and non-linear transport, but also to develop wireless rectifiers and energy-harvesting chiral devices. △ Less

Submitted 16 April, 2024; v1 submitted 14 November, 2023; originally announced November 2023.

Comments: 7 pages, 4 figures, Supplemental Material

Quantification of spin-charge interconversion in highly resistive sputtered Bi$_x$Se$_{1-x}$ with non-local spin valves

Authors: Isabel C. Arango, Won Young Choi, Van Tuong Pham, Inge Groen, Diogo C. Vaz, Punyashloka Debashis, Hai Li, Mahendra DC, Kaan Oguz, Andrey Chuvilin, Luis E. Hueso, Ian A. Young, Fèlix Casanova

Abstract: The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se… ▽ More The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se$_{1-x}$ have often been overestimated due to spurious effects related to local currents combined with a lack of understanding of the effect of the interfaces and the use of approximations for unknown parameters, such as the spin diffusion length. In the present study, non-local spin valves are used to inject pure spin currents into Bi$_x$Se$_{1-x}$, allowing us to directly obtain its spin diffusion length as well as its spin Hall angle, from 10 K up to 300 K. These values, which are more accurate than those previously reported in sputtered Bi$_x$Se$_{1-x}$, evidence that the efficiency of this material is not exceptional. Indeed, the figure of merit for spin-charge interconversion, given by the product of these two parameters, is slightly under 1 nm. Our work demonstrates the importance of considering all material parameters and interfaces when quantifying the spin transport properties of materials with strong spin-orbit coupling. △ Less

Submitted 6 November, 2023; originally announced November 2023.

Comments: 12 pages, 4 figures, 1 table, and Supplemental Material

Journal ref: Physical Review B 108, 104425 (2023)

Out-of-plane spin-to-charge conversion at low temperatures in graphene/MoTe$_2$ heterostructures

Authors: Nerea Ontoso, C. K. Safeer, Josep Ingla-Aynés, Franz Herling, Luis E. Hueso, M. Reyes Calvo, Fèlix Casanova

Abstract: Multi-directional spin-to-charge conversion - in which spin polarizations with different orientations can be converted into a charge current in the same direction - has been demonstrated in low-symmetry materials and interfaces. This is possible because, in these systems, spin to charge conversion can occur in unconventional configurations in which spin polarization and charge current where charge… ▽ More Multi-directional spin-to-charge conversion - in which spin polarizations with different orientations can be converted into a charge current in the same direction - has been demonstrated in low-symmetry materials and interfaces. This is possible because, in these systems, spin to charge conversion can occur in unconventional configurations in which spin polarization and charge current where charge current, spin current and polarization do not need to be mutually orthogonal. Here, we explore, in the low temperature regime, the spin-to-charge conversion in heterostructures of graphene with the low-symmetry 1T' phase of MoTe$_2$. First, we observe the emergence of charge conversion for out-of-plane spins at temperatures below 100 K. This unconventional component is allowed by the symmetries of both MoTe$_2$ and graphene and likely arises from spin Hall effect in the spin-orbit proximitized graphene. Moreover, we examine the low-temperature evolution of non-local voltage signals arising from the charge conversion of the two in-plane spin polarizations, which have been previously observed at higher temperature. As a result, we report omni-directional spin-to-charge conversion - for all spin polarization orientations - in graphene/MoTe${_2}$ heterostructures at low temperatures. △ Less

Submitted 2 September, 2023; originally announced September 2023.

Comments: 7 pages, 4 figures

Journal ref: Applied Physics Letters 2023, 123:032401

Temperature and thickness dependence of the thermal conductivity in 2D ferromagnet Fe$_3$GeTe$_2$

Authors: Marcel S. Claro, Javier Corral-Sertal, Adolfo O. Fumega, Santiago Blanco-Canosa, Manuel Suárez-Rodríguez, Luis E. Hueso, Victor Pardo, Francisco Rivadulla

Abstract: The emergence of symmetry-breaking orders such as ferromagnetism and the weak interlayer bonding in van der Waals materials, offers a unique platform to engineer novel heterostructures and tune transport properties like thermal conductivity. Here, we report the experimental and theoretical study of the cross-plane thermal conductivity, $κ_\perp$, of the van der Waals 2D ferromagnet Fe$_3$GeTe$_2$.… ▽ More The emergence of symmetry-breaking orders such as ferromagnetism and the weak interlayer bonding in van der Waals materials, offers a unique platform to engineer novel heterostructures and tune transport properties like thermal conductivity. Here, we report the experimental and theoretical study of the cross-plane thermal conductivity, $κ_\perp$, of the van der Waals 2D ferromagnet Fe$_3$GeTe$_2$. We observe a non-monotonic increase of $κ_\perp$ with the thickness and a large suppression in artificially-stacked layers, indicating a diffusive transport regime with ballistic contributions. These results are supported by the theoretical analyses of the accumulated thermal conductivity, which show an important contribution of phonons with mean free paths between 10 and 200 nm. Moreover, our experiments show a reduction of the $κ_\perp$ in the low-temperature ferromagnetic phase occurring at the magnetic transition. The calculations show that this reduction in $κ_\perp$ is associated with a decrease in the group velocities of the acoustic phonons and an increase in the phonon-phonon scattering of the Raman modes that couple to the magnetic phase. These results demonstrate the potential of van der Waals ferromagnets for thermal transport engineering. △ Less

Submitted 24 July, 2023; originally announced July 2023.

Gate-tunable spin Hall effect in an all-light-element heterostructure: graphene with copper oxide

Authors: Haozhe Yang, Maider Ormaza, Zhendong Chi, Eoin Dolan, Josep Ingla-Aynés, C. K. Safeer, Franz Herling, Nerea Ontoso, Marco Gobbi, Beatriz Martin-Garcia, Frederik Schiller, Luis E. Hueso, Fèlix Casanova

Abstract: Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance the spin Hall angle in graphene while retaining a long spin diffusion length. Here, we combine a light metal oxide (oxidized Cu) with graphene to induce the spin… ▽ More Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance the spin Hall angle in graphene while retaining a long spin diffusion length. Here, we combine a light metal oxide (oxidized Cu) with graphene to induce the spin Hall effect. Its efficiency, given by the product of the spin Hall angle and the spin diffusion length, can be tuned with the Fermi level position, exhibiting a maximum (1.8 $\pm$ 0.6 nm at 100 K) around the charge neutrality point. This all-light-element heterostructure shows a larger efficiency than conventional spin Hall materials. The gate-tunable spin Hall effect is observed up to room temperature. Our experimental demonstration provides an efficient spin-to-charge conversion system free from heavy metals and compatible with large-scale fabrication. △ Less

Submitted 20 February, 2024; v1 submitted 2 May, 2023; originally announced May 2023.

Comments: 15 pages, 4 figures, and Supporting Information. Minor typos corrected in this version. Funding information: Marie Sklodowska-Curie Actions, H2020-MSCA-ITN-2020; Project Acronym SPEAR; Grant Agreement No. 955671

Journal ref: Nano Lett. 23, 4406-4414 (2023)

Magnon currents excited by the spin Seebeck effect in ferromagnetic EuS thin films

Authors: M. Xochitl Aguilar-Pujol, Sara Catalano, Carmen González-Orellana, Witold Skowronski, Juan M. Gómez-Pérez, Maxim Ilyn, Celia Rogero, Marco Gobbi, Luis E. Hueso, Fèlix Casanova

Abstract: A magnetic insulator is an ideal platform to propagate spin information by exploiting magnon currents. However, until now, most studies have focused on Y$_3$Fe$_5$O$_{12}$ (YIG) and a few other ferri- and antiferromagnetic insulators, but not on pure ferromagnets. In this study, we demonstrate for the first time that magnon currents can propagate in ferromagnetic insulating thin films of EuS. By p… ▽ More A magnetic insulator is an ideal platform to propagate spin information by exploiting magnon currents. However, until now, most studies have focused on Y$_3$Fe$_5$O$_{12}$ (YIG) and a few other ferri- and antiferromagnetic insulators, but not on pure ferromagnets. In this study, we demonstrate for the first time that magnon currents can propagate in ferromagnetic insulating thin films of EuS. By performing both local and non-local transport measurements in 18-nm-thick films of EuS using Pt electrodes, we detect magnon currents arising from thermal generation by the spin Seebeck effect. By comparing the dependence of the local and non-local signals with the temperature (< 30 K) and magnetic field (< 9 T), we confirm the magnon transport origin of the non-local signal. Finally, we extract the magnon diffusion length in the EuS film (~140 nm), a short value in good correspondence with the large Gilbert dam** measured in the same film. △ Less

Submitted 14 November, 2023; v1 submitted 7 March, 2023; originally announced March 2023.

Comments: 17 pages, 5 figures, and Supplemental Material

Dual-band coupling between nanoscale polaritons and vibrational and electronic excitations in molecules

Authors: A. Bylinkin, F. Calavalle, M. Barra-Burillo, R. V. Kirtaev, E. Nikulina, E. B. Modin, E. Janzen, J. H. Edgar, F. Casanova, L. E. Hueso, V. S. Volkov, P. Vavassori, I. Aharonovich, P. Alonso-Gonzalez, R. Hillenbrand, A. Y. Nikitin

Abstract: Strong coupling (SC) between light and matter excitations such as excitons and molecular vibrations bear intriguing potential for controlling chemical reactivity, conductivity or photoluminescence. So far, SC has been typically achieved either between mid-infrared (mid-IR) light and molecular vibrations or between visible light and excitons. Achieving SC simultaneously in both frequency bands may… ▽ More Strong coupling (SC) between light and matter excitations such as excitons and molecular vibrations bear intriguing potential for controlling chemical reactivity, conductivity or photoluminescence. So far, SC has been typically achieved either between mid-infrared (mid-IR) light and molecular vibrations or between visible light and excitons. Achieving SC simultaneously in both frequency bands may open unexplored pathways for manipulating material properties. Here, we introduce a polaritonic nanoresonator (formed by h-BN layers placed on Al ribbons) hosting surface plasmon polaritons (SPPs) at visible frequencies and phonon polaritons (PhPs) at mid-IR frequencies, which simultaneously couple to excitons and atomic vibration in an adjacent molecular layer (CoPc). Employing near-field optical nanoscopy, we first demonstrate the co-localization of strongly confined near-fields at both visible and mid-IR frequencies. After covering the nanoresonator structure with a layer of CoPc molecules, we observe clear mode splittings in both frequency ranges by far-field transmission spectroscopy, unambiguously revealing simultaneous SPP-exciton and PhP-vibron coupling. Dual-band SC may be exploited for manipulating the coupling between excitons and molecular vibrations in future optoelectronics, nanophotonics, and quantum information applications. △ Less

Submitted 28 February, 2023; originally announced February 2023.

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Authors: Diogo C. Vaz, Chia-Ching Lin, John J. Plombon, Won Young Choi, Inge Groen, Isabel C. Arango, Andrey Chuvilin, Luis E. Hueso, Dmitri E. Nikonov, Hai Li, Punyashloka Debashis, Scott B. Clendenning, Tanay A. Gosavi, Yen-Lin Huang, Bhagwati Prasad, Ramamoorthy Ramesh, Aymeric Vecchiola, Manuel Bibes, Karim Bouzehouane, Stephane Fusil, Vincent Garcia, Ian A. Young, Fèlix Casanova

Abstract: With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a rel… ▽ More With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a relatively unexplored pathway with sparse results at a device level. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for the writing, and spin-to-charge current conversion between CoFe and Pt, for the reading. Unlike other current-based spintronic devices, magnetization writing is driven solely by voltage pulses. We show that, upon electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. The voltage-induced switching is supported through a combination of piezoresponse, magnetic force microscopy, and scanning nitrogen-vacancy magnetometry, where magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, as well as a new avenue for low-power beyond-CMOS technologies. △ Less

Submitted 23 February, 2023; originally announced February 2023.

Comments: 17 pages, 5 figures

Exchange bias in molecule/Fe3GeTe2 van der Waals heterostructures via spinterface effects

Authors: Junhyeon Jo, Francesco Calavalle, Beatriz Martín-García, Fèlix Casanova, Andrey Chuvilin, Luis E. Hueso, Marco Gobbi

Abstract: The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity effects. Another powerful approach to tailor magnetic materials is molecular functionalization, which leads to hybrid interface states with peculiar magnetic p… ▽ More The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity effects. Another powerful approach to tailor magnetic materials is molecular functionalization, which leads to hybrid interface states with peculiar magnetic properties, called spinterfaces. However, spinterface effects have not yet been explored on layered magnetic materials. Here, we demonstrate the emergence of spinterface effects at the interface between flakes of the prototypical layered magnetic metal Fe3GeTe2 and thin films of paramagnetic Co-phthalocyanine. Magnetotransport measurements show that the molecular layer induces a magnetic exchange bias in Fe3GeTe2, indicating that the unpaired spins in Co-phthalocyanine develop antiferromagnetic ordering by proximity and pin the magnetization reversal of Fe3GeTe2. The effect is strongest for a Fe3GeTe2 thickness of 20 nm, for which the exchange bias field reaches -840 Oe and is measurable up to approximately 110 K. This value compares very favorably with previous exchange bias fields reported for Fe3GeTe2 in all-inorganic van der Waals heterostructures, demonstrating the potential of molecular functionalization to tailor the magnetism of van der Waals layered materials. △ Less

Submitted 24 February, 2023; v1 submitted 21 February, 2023; originally announced February 2023.

Journal ref: Adv. Mater. 34, 2200474 (2022)

Spin-to-charge conversion by spin pum** in sputtered polycrystalline Bi$_x$Se$_{1-x}$

Authors: Isabel C Arango, Alberto Anadón, Silvestre Novoa, Van Tuong Pham, Won Young Choi, Junior Alegre, Laurent Badie, Andrey Chuvilin, Sébastien Petit-Watelot, Luis E Hueso, Fèlix Casanova, Juan-Carlos Rojas-Sánchez

Abstract: Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin H… ▽ More Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin Hall angle. We study the spin-to-charge conversion in Bi$_x$Se$_{1-x}$ using the spin pum** technique coming from the ferromagnetic resonance in a contiguous permalloy thin film. We put a special emphasis on the interfacial properties of the system. Our results show that the spin Hall angle of Bi$_x$Se$_{1-x}$ has an opposite sign to the one of Pt. The charge current arising from the spin-to-charge conversion is, in contrast, lower than Pt by more than one order of magnitude. We ascribe this to the interdiffusion of Bi$_x$Se$_{1-x}$ and permalloy and the changes in chemical composition produced by this effect, which is an intrinsic characteristic of the system and is not considered in many other studies. △ Less

Submitted 16 June, 2023; v1 submitted 24 December, 2022; originally announced December 2022.

Emergence of large spin-charge interconversion at an oxidized Cu/W interface

Authors: Inge Groen, Van Tuong Pham, Stefan Ilić, Won Young Choi, Andrey Chuvilin, Edurne Sagasta, Diogo C. Vaz, Isabel C. Arango, Nerea Ontoso, F. Sebastian Bergeret, Luis E. Hueso, Ilya V. Tokatly, Fèlix Casanova

Abstract: Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study t… ▽ More Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study the origin of SCI in a Py/Cu/W lateral spin valve and quantify its efficiency. An exhaustive characterization of the interface between Cu and W electrodes uncovers the presence of an oxidized layer (WO$_x$). We determine that the SCI occurs at the Cu/WO$_x$ interface with a temperature-independent interfacial spin-loss conductance of $G_{||} \approx$ 20 $\times$ 10$^{13} Ω^{-1}m^{-2}$ and an interfacial spin-charge conductivity $σ_{SC}=-$1610 $Ω^{-1}cm^{-1}$ at 10 K ($-$830 $Ω^{-1}cm^{-1}$ at 300 K). This corresponds to an efficiency given by the inverse Edelstein length $λ_{IEE}=-$0.76 nm at 10 K ($-$0.4 nm at 300 K), which is remarkably larger than in metal/metal and metal/oxide interfaces and bulk heavy metals. The large SCI efficiency at such an oxidized interface is a promising candidate for the magnetic readout in MESO logic devices. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Comments: 11 pages, 3 figures, and Supplemental Material

Journal ref: Phys. Rev. B 107, 184438 (2023)

Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures

Authors: Nerea Ontoso, C. K. Safeer, Franz Herling, Josep Ingla-Aynés, Haozhe Yang, Zhendong Chi, Iñigo Robredo, Maia G. Vergniory, Fernando de Juan, M. Reyes Calvo, Luis E. Hueso, Fèlix Casanova

Abstract: Spin-charge interconversion (SCI) is a central phenomenon to the development of spintronic devices from materials with strong spin-orbit coupling (SOC). In the case of materials with high crystal symmetry, the only allowed SCI processes are those where the spin current, charge current and spin polarization directions are orthogonal to each other. Consequently, standard SCI experiments are designed… ▽ More Spin-charge interconversion (SCI) is a central phenomenon to the development of spintronic devices from materials with strong spin-orbit coupling (SOC). In the case of materials with high crystal symmetry, the only allowed SCI processes are those where the spin current, charge current and spin polarization directions are orthogonal to each other. Consequently, standard SCI experiments are designed to maximize the signals arising from the SCI processes with conventional mutually orthogonal geometry. However, in low-symmetry materials, certain non-orthogonal SCI processes are also allowed. Since the standard SCI experiment is limited to charge current flowing only in one direction in the SOC material, certain allowed SCI configurations remain unexplored. In this work, we performed a thorough SCI study in a graphene-based lateral spin valve combined with low-symmetry MoTe$_2$. Due to a very low contact resistance between the two materials, we could detect SCI signals using both a standard configuration, where the charge current is applied along the MoTe$_2$, and a recently introduced (3D-current) configuration, where the charge current flow can be controlled in three directions within the heterostructure. As a result, we observed three different SCI components, one orthogonal and two non-orthogonal, giving new insight into the SCI processes in low-symmetry materials. The large SCI signals obtained at room temperature, along with the versatility of the 3D-current configuration, provide feasibility and flexibility to the design of the next generation of spin-based devices. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Comments: 11 pages, 4 figures

All-electrical spin-to-charge conversion in sputtered Bi$_x$Se$_{1-x}$

Authors: Won Young Choi, Isabel C. Arango, Van Tuong Pham, Diogo C. Vaz, Haozhe Yang, Inge Groen, Chia-Ching Lin, Emily S. Kabir, Kaan Oguz, Punyashloka Debashis, John J. Plombon, Hai Li, Dmitri E. Nikonov, Andrey Chuvilin, Luis E. Hueso, Ian A. Young, Fèlix Casanova

Abstract: One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charg… ▽ More One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charge conversion efficiencies is easily neglected or underestimated. Here, we demonstrate all electrical spin-to-charge conversion in Bi$_x$Se$_{1-x}$ nanodevices and show how the conversion efficiency can be overestimated by tens of times depending on the adjacent metal used as a contact. We attribute this to the intermixing-induced compositional change and the properties of a polycrystal that lead to drastic changes in resistivity and spin Hall angle. Strategies to improve the spin-to-charge conversion signal in similar structures for functional devices are discussed. △ Less

Submitted 18 October, 2022; originally announced October 2022.

Comments: Main text (18 pages, 3 figures, 2 tables) and supporting information (18 pages)

Journal ref: Nano Lett. 22, 7992-7999 (2022)

Omnidirectional spin-to-charge conversion in graphene/NbSe$_2$ van der Waals heterostructures

Authors: Josep Ingla-Aynés, Inge Groen, Franz Herling, Nerea Ontoso, C. K. Safeer, Fernando de Juan, Luis E. Hueso, Marco Gobbi, Fèlix Casanova

Abstract: The conversion of spin currents polarized in different directions into charge currents is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symmetry are a very appealing platform for such a goal. Here, by performing nonlocal spin precession experiments, we demonstrate the spin-to-charge conversion (SCC) of spins oriented in all three directions (x, y, and z). By… ▽ More The conversion of spin currents polarized in different directions into charge currents is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symmetry are a very appealing platform for such a goal. Here, by performing nonlocal spin precession experiments, we demonstrate the spin-to-charge conversion (SCC) of spins oriented in all three directions (x, y, and z). By analyzing the magnitude and temperature dependence of the signal in different configurations, we argue that the different SCC components measured are likely due to spin-orbit proximity and broken symmetry at the twisted graphene/NbSe$_2$ interface. Such efficient omnidirectional SCC opens the door to the use of new architectures in spintronic devices, from spin-orbit torques that can switch any magnetization to the magnetic state readout of magnetic elements pointing in any direction. △ Less

Submitted 16 May, 2022; originally announced May 2022.

Spin Hall magnetoresistance effect from a disordered interface

Authors: Sara Catalano, Juan M. Gomez-Perez, M. Xochitl Aguilar-Pujol, Andrey Chuvilin, Marco Gobbi, Luis E. Hueso, Fèlix Casanova

Abstract: The Spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical set-up. Its sensitivity to the magnetization of thin films and surfaces may turn it into a valuable technique to characterize Van der Waals magnetic materials, which support long range magnetic order in atomically thin layers. However, realistic surfaces can… ▽ More The Spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical set-up. Its sensitivity to the magnetization of thin films and surfaces may turn it into a valuable technique to characterize Van der Waals magnetic materials, which support long range magnetic order in atomically thin layers. However, realistic surfaces can be affected by defects and disorder, which may result in unexpected artifacts in the SMR, rather than the sole appearance of electrical noise. Here, we study the SMR response of heterostructures combining a platinum (Pt) thin film with the Van der Waals antiferromagnet MnPSe3 and observe a robust SMR-like signal, which turns out to originate from the presence of strong interfacial disorder in the system. We use transmission electron microscopy (TEM) to characterize the interface between MnPSe3 and Pt, revealing the formation of a few-nanometer-thick platinum-chalcogen amorphous layer. The analysis of the transport and TEM measurements suggests that the signal arises from a disordered magnetic system formed at the Pt/MnPSe3 interface, washing out the interaction between the spins of the Pt electrons and the MnPSe3 magnetic lattice. Our results show that damaged interfaces can yield an important contribution to SMR, questioning a widespread assumption on the role of disorder in such measurements. △ Less

Submitted 11 February, 2022; originally announced February 2022.

Journal ref: ACS Appl. Mater. Interfaces 2022

Gate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires

Authors: Francesco Calavalle, Manuel Suárez-Rodríguez, Beatriz Martín-García, Annika Johansson, Diogo C. Vaz, Haozhe Yang, Igor V. Maznichenko, Sergey Ostanin Aurelio Mateo-Alonso, Andrey Chuvilin, Ingrid Mertig, Marco Gobbi, Fèlix Casanova, Luis E. Hueso

Abstract: Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as… ▽ More Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as Tellurium are excellent electrical transport materials, but have not been explored to enable the electrical control of spin polarization in devices. Here, we demonstrate the all-electrical generation, manipulation, and detection of spin polarization in chiral single-crystalline Tellurium nanowires. By recording a large (up to 7%) and chirality-dependent unidirectional magnetoresistance, we show that the orientation of the electrically generated spin polarization is determined by the nanowire handedness and uniquely follows the current direction, while its magnitude can be manipulated by an electrostatic gate. Our results pave the way for the development of magnet-free chirality-based spintronic devices. △ Less

Submitted 2 January, 2022; originally announced January 2022.

Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves

Authors: C. K. Safeer, Franz Herling, Won Young Choi, Nerea Ontoso, Josep Ingla-Aynés, Luis E. Hueso, Fèlix Casanova

Abstract: Understanding spin physics in graphene is crucial for develo** future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and… ▽ More Understanding spin physics in graphene is crucial for develo** future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the inverse Rashba-Edelstein effect can be measured in pristine graphene possessing negligible spin-orbit coupling, confirming that these signals are unrelated to spin-to-charge conversion. We identify either the anomalous Hall effect in the ferromagnet or the ordinary Hall effect in graphene induced by stray fields as the possible sources of this artefact. By quantitatively comparing these options with finite-element-method simulations, we conclude the latter better explains our results. Our study deepens the understanding of spin-to-charge conversion measurement schemes in graphene, which should be taken into account when designing future experiments. △ Less

Submitted 3 November, 2021; v1 submitted 9 September, 2021; originally announced September 2021.

Comments: 14 pages, 5 figures, Supplementary Information

Journal ref: 2D Mater. 9, 015024 (2022)

Large spin-charge interconversion induced by interfacial spin-orbit coupling in a highly conducting all-metallic system

Authors: Van Tuong Pham, Haozhe Yang, Won Young Choi, Alain Marty, Inge Groen, Andrey Chuvilin, F. Sebastian Bergeret, Luis E. Hueso, Ilya V. Tokatly, Fèlix Casanova

Abstract: Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has bee… ▽ More Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has been a common issue to properly quantify the spin-charge interconversion in these systems, being the case of Au paradigmatic. Here, we obtain a large spin-charge interconversion at a highly conducting Au/Cu interface which is experimentally shown to arise from the inverse spin galvanic effect of the interface and not from the spin Hall effect of bulk Au. We use two parameters independent of the microscopic details to properly quantify the spin-charge interconversion and the spin losses due to the interfacial spin-orbit coupling, providing an adequate benchmarking to compare with any spin-charge interconversion system. The good performance of this metallic interface, not based in Bi, opens the path to the use of much simpler light/heavy metal systems. △ Less

Submitted 27 June, 2024; v1 submitted 23 August, 2021; originally announced August 2021.

Journal ref: Phys. Rev. B 104, 184410 (2021)

Electrical control of valley-Zeeman spin-orbit coupling-induced spin precession at room temperature

Authors: Josep Ingla-Aynés, Franz Herling, Jaroslav Fabian, Luis E. Hueso, Fèlix Casanova

Abstract: The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin precession has been observed in the ballistic regime and at low temperatures only. However, the strong spin anisotropy and the valley character of the electronic state… ▽ More The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin precession has been observed in the ballistic regime and at low temperatures only. However, the strong spin anisotropy and the valley character of the electronic states in 2D materials provide unique control knobs to manipulate spin precession. Here, by manipulating the anisotropic spin-orbit coupling in bilayer graphene by the proximity effect to WSe$_2$, we achieve coherent spin precession in the absence of an external magnetic field, even in the diffusive regime. Remarkably, the sign of the precessing spin polarization can be tuned by a back gate voltage and by a drift current. Our realization of a spin field-effect transistor at room temperature is a cornerstone for the implementation of energy-efficient spin-based logic. △ Less

Submitted 27 June, 2021; originally announced June 2021.

Comments: 7 pages, 4 figures

Enhanced Light-Matter Interaction in B-10 Monoisotopic Boron Nitride Infrared Nanoresonators

Authors: M. Autore, I. Dolado, P. Li, R. Esteban, F. Alfaro, A. Atxabal, S. Liu, J. Edgar, S. Velez, F. Casanova, L. Hueso, J. Aizpurua, R. Hillenbrand

Abstract: Phonon-polaritons, mixed excitations of light coupled to lattice vibrations (phonons), are emerging as a powerful platform for nanophotonic applications. This is because of their ability to concentrate light into extreme sub-wavelength scales and because of their longer phonon lifetimes than their plasmonic counterparts. In this work, the infrared properties of phonon-polaritonic nanoresonators ma… ▽ More Phonon-polaritons, mixed excitations of light coupled to lattice vibrations (phonons), are emerging as a powerful platform for nanophotonic applications. This is because of their ability to concentrate light into extreme sub-wavelength scales and because of their longer phonon lifetimes than their plasmonic counterparts. In this work, the infrared properties of phonon-polaritonic nanoresonators made of monoisotopic B-10 hexagonal-boron nitride (h-BN) are explored, a material with increased phonon-polariton lifetimes compared to naturally abundant h-BN due to reduced photon scattering from randomly distributed isotopes. An average relative improvement of 50% in the nanoresonators Q factor is obtained with respect of nanoresonators made of naturally abundant h-BN. Moreover, the monoisotopic h-BN nano-ribbon arrays are used to sense nanometric-thick films of molecules, both through surface-enhanced absorption spectroscopy and refractive index sensing. In addition, strong coupling is achieved between a molecular vibration and the phonon-polariton resonance in monoisotopic h-BN ribbons. △ Less

Submitted 17 May, 2021; originally announced May 2021.

Journal ref: Advanced Optical Materials 9, 2001958 (2020)

Common high-performance semiconducting polymers are not amorphous but semi-para-crystalline

Authors: Sara Marina, Edgar Gutierrez-Fernandez, Junkal Gutierrez, Marco Gobbi, Eduardo Solano, Jeromy Rech, Wei You, Luis Hueso, Agnieszka Tercjak, Harald Ade, Jaime Martin

Abstract: Precise determination of the solid-state microstructure of semiconducting polymers is of paramount importance for the further development of these materials in various organic electronic technologies. Yet, prior characterization of the ordering of semiconducting polymers often resulted in conundrums in which X-ray scattering and microscopy yielded seemingly contradicting results. Here, based on fa… ▽ More Precise determination of the solid-state microstructure of semiconducting polymers is of paramount importance for the further development of these materials in various organic electronic technologies. Yet, prior characterization of the ordering of semiconducting polymers often resulted in conundrums in which X-ray scattering and microscopy yielded seemingly contradicting results. Here, based on fast scanning calorimetry, we introduce for the first time the concept of the semi-para-crystallinity and measurement of the degree of para-crystallinity (ordered volume/mass fraction) in a set of materials that previously eluded understanding. In combination with lattice distortion determination within para-crystals (g-parameter from X-ray scattering) and nanomorphology, the complete solid-state microstructure is correlated with device properties. Our data show that the long-range charge carrier transport in these materials is more sensitive to the interconnection of para-crystal units than to the amount of structural order itself. △ Less

Submitted 29 March, 2021; originally announced March 2021.

Disentangling spin, anomalous and planar Hall effects in ferromagnetic/heavy metal nanostructures

Authors: Inge Groen, Van Tuong Pham, Naëmi Leo, Alain Marty, Luis E. Hueso, Fèlix Casanova

Abstract: Ferromagnetic (FM)/heavy metal (HM) nanostructures can be used for the magnetic state readout in the proposed magneto-electric spin-orbit logic by locally injecting a spin-polarized current and measure the spin-to-charge conversion via the spin Hall effect. However, this local configuration is prone to spurious signals. In this work, we address spurious Hall effects that can contaminate the spin H… ▽ More Ferromagnetic (FM)/heavy metal (HM) nanostructures can be used for the magnetic state readout in the proposed magneto-electric spin-orbit logic by locally injecting a spin-polarized current and measure the spin-to-charge conversion via the spin Hall effect. However, this local configuration is prone to spurious signals. In this work, we address spurious Hall effects that can contaminate the spin Hall signal in these FM/HM T-shaped nanostructures. The most pronounced Hall effects in our Co50Fe50/Pt nanostructures are the planar Hall effect and the anomalous Hall effect generated in the FM nanowire. We find that the planar Hall effect, induced by misalignment between magnetization and current direction in the FM wire, is manifested as a shift in the measured baseline resistance, but does not alter the spin Hall signal. In contrast, the anomalous Hall effect, arising from the charge current distribution within the FM, adds to the spin Hall signal. However, the effect can be made insignificant by minimizing the shunting effect via proper design of the device. We conclude that local spin injection in FM/HM nanostructures is a suitable tool for measuring spin Hall signals and, therefore, a valid method for magnetic state readout in prospective spin-based logic. △ Less

Submitted 6 March, 2021; originally announced March 2021.

Comments: 18 pages, 7 figures

Journal ref: Phys. Rev. Applied 15, 044010 (2021)

Microcavity phonon polaritons from weak to ultrastrong phonon-photon coupling

Authors: Maria Barra-Burillo, Unai Muniain, Sara Catalano, Marta Autore, Felix Casanova, Luis E. Hueso, Javier Aizpurua, Ruben Esteban, Rainer Hillenbrand

Abstract: Strong coupling between molecular vibrations and microcavity modes has been demonstrated to modify physical and chemical properties of the molecular material. Here, we study the much less explored coupling between lattice vibrations (phonons) and microcavity modes. Embedding thin layers of hexagonal boron nitride (hBN) into classical microcavities, we demonstrate the evolution from weak to ultrast… ▽ More Strong coupling between molecular vibrations and microcavity modes has been demonstrated to modify physical and chemical properties of the molecular material. Here, we study the much less explored coupling between lattice vibrations (phonons) and microcavity modes. Embedding thin layers of hexagonal boron nitride (hBN) into classical microcavities, we demonstrate the evolution from weak to ultrastrong phonon-photon coupling when the hBN thickness is increased from a few nanometers to a fully filled cavity. Remarkably, strong coupling is achieved for hBN layers as thin as 10 nm. Further, the ultrastrong coupling in fully filled cavities yields a cavity polariton dispersion matching that of phonon polaritons in bulk hBN, highlighting that the maximum light-matter coupling in microcavities is limited to the coupling strength between photons and the bulk material. The tunable cavity phonon polaritons could become a versatile platform for studying how the coupling strength between photons and phonons may modify the properties of polar crystals. △ Less

Submitted 27 January, 2021; originally announced January 2021.

Tailoring Superconductivity in Large-Area Single-Layer NbSe2 via Self-Assembled Molecular Adlayers

Authors: Francesco Calavalle, Paul Dreher, Ananthu P. Surdendran, Wen Wan, Melanie Timpel, Roberto Verucchi, Celia Rogero, Thilo Bauch, Floriana Lombardi, Fèlix Casanova, Marco Vittorio Nardi, Miguel M. Ugeda, Luis E. Hueso, Marco Gobbi

Abstract: Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search of materials by design, because their optoelectronic properties can be manipulated through surface engineering and molecular functionalization. However, the impact of molecules on intrinsic physical properties of TMDs, such as superconductivity, remains largely unexplored. In this work, the critical… ▽ More Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search of materials by design, because their optoelectronic properties can be manipulated through surface engineering and molecular functionalization. However, the impact of molecules on intrinsic physical properties of TMDs, such as superconductivity, remains largely unexplored. In this work, the critical temperature (TC) of large-area NbSe2 monolayers is manipulated, employing ultrathin molecular adlayers. Spectroscopic evidence indicates that aligned molecular dipoles within the self-assembled layers act as a fixed gate terminal, collectively generating a macroscopic electrostatic field on NbSe2. This results in an \sim 55\% increase and a 70\% decrease in TC depending on the electric field polarity, which is controlled via molecular selection. The reported functionalization, which improves the air stability of NbSe2, is efficient, practical, up-scalable, and suited to functionalize large-area TMDs. Our results indicate the potential of hybrid 2D materials as a novel platform for tunable superconductivity. △ Less

Submitted 7 December, 2020; originally announced December 2020.

Real-space observation of vibrational strong coupling between propagating phonon polaritons and organic molecules

Authors: Andrei Bylinkin, Martin Schnell, Marta Autore, Francesco Calavalle, Peining Li, Javier Taboada-Gutitierrez, Song Liu, James H. Edgar, Felix Casanova, Luis E. Hueso, Pablo Alonso-Gonzalez, Alexey Y. Nikitin, Rainer Hillenbrand

Abstract: Phonon polaritons (PPs) in van der Waals (vdW) materials can strongly enhance light-matter interactions at mid-infrared frequencies, owing to their extreme infrared field confinement and long lifetimes. PPs thus bear potential for achieving vibrational strong coupling (VSC) with molecules. Although the onset of VSC has recently been observed spectroscopically with PP nanoresonators, no experiments… ▽ More Phonon polaritons (PPs) in van der Waals (vdW) materials can strongly enhance light-matter interactions at mid-infrared frequencies, owing to their extreme infrared field confinement and long lifetimes. PPs thus bear potential for achieving vibrational strong coupling (VSC) with molecules. Although the onset of VSC has recently been observed spectroscopically with PP nanoresonators, no experiments so far have resolved VSC in real space and with propagating modes in unstructured layers. Here, we demonstrate by real-space nanoimaging that VSC can be achieved between propagating PPs in thin vdW crystals (specifically h-BN) and molecular vibrations in adjacent thin molecular layers. To that end, we performed near-field polariton interferometry, showing that VSC leads to the formation of a propagating hybrid mode with a pronounced anti-crossing region in its dispersion, in which propagation with negative group velocity is found. Numerical calculations predict VSC for nanometer-thin molecular layers and PPs in few-layer vdW materials, which could make propagating PPs a promising platform for ultra-sensitive on-chip spectroscopy and strong coupling experiments. △ Less

Submitted 3 June, 2021; v1 submitted 27 October, 2020; originally announced October 2020.

Paramagnetic spin Hall magnetoresistance

Authors: Koichi Oyanagi, Juan M. Gomez-Perez, Xian-Peng Zhang, Takashi Kikkawa, Yao Chen, Edurne Sagasta, Andrey Chuvilin, Luis E. Hueso, Vitaly N. Golovach, F. Sebastian Bergeret, Fèlix Casanova, Eiji Saitoh

Abstract: Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins and magnetization at the interface. SMR has been used to read out information written in a small magnet and to detect magnetization dynamics, but it has been li… ▽ More Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins and magnetization at the interface. SMR has been used to read out information written in a small magnet and to detect magnetization dynamics, but it has been limited to magnets; magnetic ordered phases or instability of magnetic phase transition has been believed to be indispensable. Here, we report the observation of SMR in a paramagnetic insulator Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) without spontaneous magnetization combined with a Pt film. The paramagnetic SMR can be attributed to spin-transfer torque acting on localized spins in GGG. We determine the efficiencies of spin torque and spin-flip scattering at the Pt/GGG interface, and demonstrate these quantities can be tuned with external magnetic fields. The results clarify the mechanism of spin-transport at a metal/paramagnetic insulator interface, which gives new insight into the spintronic manipulation of spin states in paramagnetic systems. △ Less

Submitted 8 October, 2021; v1 submitted 6 August, 2020; originally announced August 2020.

Comments: 40 pages, 15 figures

Journal ref: Physical Review B 104, 134428 (2021)

Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions

Authors: Cristina Sanz-Fernández, Van Tuong Pham, Edurne Sagasta, Luis E. Hueso, Ilya V. Tokatly, Fèlix Casanova, F. Sebastián Bergeret

Abstract: We present and verify experimentally a universal theoretical framework for the description of spin-charge interconversion in non-magnetic metal/insulator structures with interfacial spin-orbit coupling (ISOC). Our formulation is based on drift-diffusion equations supplemented with generalized boundary conditions. The latter encode the effects of ISOC and relate the electronic transport in such sys… ▽ More We present and verify experimentally a universal theoretical framework for the description of spin-charge interconversion in non-magnetic metal/insulator structures with interfacial spin-orbit coupling (ISOC). Our formulation is based on drift-diffusion equations supplemented with generalized boundary conditions. The latter encode the effects of ISOC and relate the electronic transport in such systems to spin loss and spin-charge interconversion at the interface, which are parameterized, respectively, by $G_{\parallel/\perp}$ and $σ_{\rm{sc/cs}}$. We demonstrate that the conversion efficiency depends solely on these interfacial parameters. We apply our formalism to two typical spintronic devices that exploit ISOC: a lateral spin valve and a multilayer Hall bar, for which we calculate the non-local resistance and the spin Hall magnetoresistance, respectively. Finally, we perform measurements on these two devices with a BiO$_x$/Cu interface and verify that transport properties related to the ISOC are quantified by the same set of interfacial parameters. △ Less

Submitted 3 July, 2020; originally announced July 2020.

Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$

Authors: Franz Herling, C. K. Safeer, Josep Ingla-Aynés, Nerea Ontoso, Luis E. Hueso, Fèlix Casanova

Abstract: The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quan… ▽ More The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the SHE in graphene proximitized with WSe$_2$ up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the spin Hall effect and no Rashba-Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of two-dimensional materials to advance towards the implementation of novel spin-based devices and future applications. △ Less

Submitted 16 June, 2020; originally announced June 2020.

Comments: 12 pages, 4 figures, 1 table, Supplementary Material

Journal ref: APL Materials 8, 071103 (2020)

Collective near-field coupling in infrared-phononic metasurfaces for nano-light canalization

Authors: Peining Li, Guangwei Hu, Irene Dolado, Mykhailo Tymchenko, Cheng-Wei Qiu, Francisco Javier Alfaro-Mozaz, Felix Casanova, Luis E. Hueso, Song Liu, James H. Edgar, Saül Vélez, Andrea Alu, Rainer Hillenbrand

Abstract: Polaritons, coupled excitations of photons and dipolar matter excitations, can propagate along anisotropic metasurfaces with either hyperbolic or elliptical dispersion. At the transition from hyperbolic to elliptical dispersion (corresponding to a topological transition), various intriguing phenomena are found, such as an enhancement of the photonic density of states, polariton canalization and hy… ▽ More Polaritons, coupled excitations of photons and dipolar matter excitations, can propagate along anisotropic metasurfaces with either hyperbolic or elliptical dispersion. At the transition from hyperbolic to elliptical dispersion (corresponding to a topological transition), various intriguing phenomena are found, such as an enhancement of the photonic density of states, polariton canalization and hyperlensing. Here we investigate theoretically and experimentally the topological transition and the polaritonic coupling of deeply subwavelength elements in a uniaxial infrared-phononic metasurface, a grating of hexagonal boron nitride (hBN) nanoribbons. By hyperspectral infrared nanoimaging, we observe, for the first time, a synthetic transverse optical phonon resonance (that is, the strong collective near-field coupling of the nanoribbons) in the middle of the hBN Reststrahlen band, yielding a topological transition from hyperbolic to elliptical dispersion. We further visualize and characterize the spatial evolution of a deeply subwavelength canalization mode near the transition frequency, which is a collimated polariton that is the basis for hyperlensing and diffraction-less propagation. Our results provide fundamental insights into the role of polaritonic near-field coupling in metasurfaces for creating topological transitions and polariton canalization. △ Less

Submitted 2 June, 2020; originally announced June 2020.

Journal ref: Nature Communications, 11, 3663, 2020

Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature

Authors: C. K. Safeer, Josep Ingla-Aynés, Nerea Ontoso, Franz Herling, Wen**g Yan, Luis E. Hueso, Fèlix Casanova

Abstract: Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition meta… ▽ More Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition metal dichalcogenide van der Waals heterostructures with limited scalability. Here, we experimentally demonstrate spin Hall effect up to room temperature in bilayer graphene combined with a nonmagnetic insulator, an evaporated bismuth oxide layer. The measured spin Hall effect raises most likely from an extrinsic mechanism. With a large spin-to-charge conversion efficiency, scalability, and ease of integration to electronic devices, we show a promising material heterostructure suitable for spin-based device applications. △ Less

Submitted 14 May, 2020; originally announced May 2020.

Comments: 12 pages, 4 figures, supporting information

Journal ref: Nano Lett. 20, 4573-4579 (2020)

Tuning Ambipolarity in a Polymer Field Effect Transistor using Graphene electrodes

Authors: Kaushik Bairagi, Sara Catalano, Francesco Calavalle, Elisabetta Zuccatti, Roger Llopis, Fèlix Casanova, Luis E. Hueso

Abstract: Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme thinness and flexibility of graphene. Here, we demonstrate the tuning of the ambipolar nature of the semiconductor polymer N2200 from Polyera ActiveInk by incorporat… ▽ More Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme thinness and flexibility of graphene. Here, we demonstrate the tuning of the ambipolar nature of the semiconductor polymer N2200 from Polyera ActiveInk by incorporating graphene electrodes in a transistor geometry. Our devices show a balanced ambipolar behavior with high current ON-OFF ratio and charge carrier mobilities. These effects are caused by both the effective energy barrier modulation and by the weak electric field screening effect at the graphene-polymer interface. Our results provide a strategy to integrate 2D graphene electrodes in ambipolar transistors in order to improve and modulate their characteristics, paving the way for the design of novel organic electronic devices. △ Less

Submitted 12 May, 2020; originally announced May 2020.

Comments: 16 pages, 4 figures, Accepted Manuscript

Journal ref: J. Mater. Chem. C, 2020

Room-temperature operation of a molecular spin photovoltaic device on a transparent substrate

Authors: Kaushik Bairagi, David Garcia Romero, Francesco Calavalle, Sara Catalano, Elisabetta Zuccatti, Roger Llopis, Fèlix Casanova, Luis E. Hueso

Abstract: Incorporating multifunctionality along with the spin-related phenomenon in a single device is of great interest for the development of next generation spintronic devices. One of these challenges is to couple the photo-response of the device together with its magneto-response to exploit the multifunctional operation at room temperature. Here, the multifunctional operation of a single layer p-type m… ▽ More Incorporating multifunctionality along with the spin-related phenomenon in a single device is of great interest for the development of next generation spintronic devices. One of these challenges is to couple the photo-response of the device together with its magneto-response to exploit the multifunctional operation at room temperature. Here, the multifunctional operation of a single layer p-type molecular spin valve is presented, where the device shows a photovoltaic effect at the room temperature on a transparent glass substrate. The generated photovoltage is almost three times larger than the applied bias to the device which facilitates the modulation of the magnetic response of the device both with bias and light. It is observed that the photovoltage modulation with light and magnetic field is linear with the light intensity. The device shows an increase in power conversion efficiency under magnetic field, an ability to invert the current with magnetic field and under certain conditions it can act as a spin-photodetector with zero power consumption in the standby mode. The room temperature exploitation of the interplay among light, bias and magnetic field in the single device with a p-type molecule opens a way towards more complex and efficient operation of a complete spin-photovoltaic cell. △ Less

Submitted 15 November, 2021; v1 submitted 12 May, 2020; originally announced May 2020.

Comments: 17 pages, 7 Figures, included supplementary

Journal ref: Adv. Mater. 2020, 32, 1906908

Top Dielectric Induced Ambipolarity in an n-channel dual-gated Organic Field Effect Transistor

Authors: Kaushik Bairagi, Elisabetta Zuccatti, Francesco Calavalle, Sara Catalano, Subir Parui, Roger Llopis, Frank Ortmann, Fèlix Casanova, Luis E. Hueso

Abstract: The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typically, only p-type or n-type operation is realized in an OFET, while the respective counterpart is either suppressed by charge trap** or limited by the injection barrier with the electrodes. Here we show that only the pres… ▽ More The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typically, only p-type or n-type operation is realized in an OFET, while the respective counterpart is either suppressed by charge trap** or limited by the injection barrier with the electrodes. Here we show that only the presence of a top dielectric turns an n-type polymer semiconductor (N2200, Polyera ActiveInk) into an ambipolar one, as detected from both bottom and top gated OFET operation. The effect is independent of the channel thickness and the top dielectric combinations. Variable temperature transfer characteristics show that both the electrons and holes can be equally transported through the bulk of the polymer semiconductor. △ Less

Submitted 6 May, 2020; originally announced May 2020.

Comments: 16 pages, 3 figures

Journal ref: J. Mater. Chem. C, 2019,7, 10389-10393 J. Mater. Chem. C, 2019,7, 10389-10393 J. Mater. Chem. C, 2019,7, 10389-10393

Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance

Authors: Juan M. Gomez-Perez, Xian-Peng Zhang, Francesco Calavalle, Maxim Ilyn, Carmen González-Orellana, Marco Gobbi, Celia Rogero, Andrey Chuvilin, Vitaly N. Golovach, Luis E. Hueso, F. Sebastian Bergeret, Fèlix Casanova

Abstract: Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many applications. Here, we report the first measurement of the spin Hall magnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS). We perform SMR measu… ▽ More Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many applications. Here, we report the first measurement of the spin Hall magnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS). We perform SMR measurements in a wide range of temperatures and fit the results by using a microscopic model. From this fitting procedure we obtain the temperature dependence of the spin conductances ($G_s$, $G_r$ and $G_i$), disentangling the contribution of field-like torque ($G_i$), dam**-like torque ($G_r$), and spin-flip scattering ($G_s$). An interfacial exchange field of the order of 1 meV acting upon the conduction electrons of Pt can be estimated from $G_i$, which is at least three times larger than $G_r$ below the Curie temperature. Our work provides an easy method to quantify this interfacial spin-splitting field, which play a key role in emerging fields such as superconducting spintronics and caloritronics, and topological quantum computation. △ Less

Submitted 3 September, 2020; v1 submitted 24 April, 2020; originally announced April 2020.

Comments: 15 pages, 3 figures, Supporting information included at the end

Spin-orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

Authors: Van Tuong Pham, Inge Groen, Sasikanth Manipatruni, Won Young Choi, Dmitri E. Nikonov, Edurne Sagasta, Chia-Ching Lin, Tanay Gosavi, Alain Marty, Luis E. Hueso, Ian Young, Fèlix Casanova

Abstract: Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experim… ▽ More Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experimentally show that a favorable miniaturization law is possible via the use of spin-Hall detection of the in-plane magnetic state of a magnet. This scaling law allows us to obtain a giant signal by spin Hall effect in CoFe/Pt nanostructures and quantify an effective spin-to-charge conversion rate for the CoFe/Pt system. The spin-to-charge conversion can be described as a current source with an internal resistance, i.e., it generates an electromotive force that can be used to drive computing circuits. We predict that the spin-orbit detection of magnetic states can reach high efficiency at reduced dimensions, paving the way for scalable spin-orbit logic devices and memories. △ Less

Submitted 24 February, 2020; originally announced February 2020.

Comments: 13 pages, 3 figures, Extended Data, Supplementary Information

Journal ref: Nature Electronics 3, 309-315 (2020)

Differences in the magnon diffusion length for electrically and thermally driven magnon currents in Y$_3$Fe$_5$O$_{12}$

Authors: Juan M. Gomez-Perez, Saül Vélez, Luis E. Hueso, Fèlix Casanova

Abstract: Recent demonstration of efficient transport and manipulation of spin information by magnon currents have opened exciting prospects for processing information in devices. Magnon currents can be driven both electrically and thermally, even in magnetic insulators, by applying charge currents in an adjacent metal layer. Earlier reports in thin yttrium iron garnet (YIG) films suggested that the diffusi… ▽ More Recent demonstration of efficient transport and manipulation of spin information by magnon currents have opened exciting prospects for processing information in devices. Magnon currents can be driven both electrically and thermally, even in magnetic insulators, by applying charge currents in an adjacent metal layer. Earlier reports in thin yttrium iron garnet (YIG) films suggested that the diffusion length of magnons is independent on the biasing method, but different values were obtained in thicker films. Here, we study the magnon diffusion length for electrically and thermally driven magnon currents in the linear regime in a 2-$μ$m-thick YIG film as a function of temperature and magnetic field. Our results show a decrease of the magnon diffusion length with magnetic field for both biasing methods and at all temperatures from 5 to 300 K, indicating that sub-thermal magnons dominate the long-range transport. Moreover, we demonstrate that the value of the magnon diffusion length depends on the driving mechanism, suggesting that different non-equilibrium magnon distributions are biased for each method. Finally, we demonstrate that the magnon diffusion length for thermally driven magnon currents is independent of the YIG thickness and material growth conditions, confirming that this quantity is an intrinsic parameter of YIG. △ Less

Submitted 15 May, 2020; v1 submitted 1 December, 2019; originally announced December 2019.

Comments: 20 pages, 9 figures

Journal ref: Phys. Rev. B 101, 184420 (2020)

Absence of evidence of spin transport through amorphous Y$_3$Fe$_5$O$_{12}$

Authors: Juan M. Gomez-Perez, Koichi Oyanagi, Reimei Yahiro, Rafael Ramos, Luis E. Hueso, Eiji Saitoh, Fèlix Casanova

Abstract: Long-distance transport of spin information in insulators without long-range magnetic order has been recently reported. Here, we perform a complete characterization of amorphous Y$_3$Fe$_5$O$_{12}$ (a-YIG) films grown on top of SiO$_2$. We confirm a clear amorphous structure and paramagnetic behavior of our a-YIG films, with semiconducting behavior resistivity that strongly decays with increasing… ▽ More Long-distance transport of spin information in insulators without long-range magnetic order has been recently reported. Here, we perform a complete characterization of amorphous Y$_3$Fe$_5$O$_{12}$ (a-YIG) films grown on top of SiO$_2$. We confirm a clear amorphous structure and paramagnetic behavior of our a-YIG films, with semiconducting behavior resistivity that strongly decays with increasing temperature. The non-local transport measurements show a signal which is not compatible with spin transport and can be attributed to the drop of the a-YIG resistivity caused by Joule heating. Our results emphasize that exploring spin transport in amorphous materials requires careful procedures in order to exclude the charge contribution from the spin transport signals. △ Less

Submitted 5 February, 2020; v1 submitted 14 November, 2019; originally announced November 2019.

Comments: 10 pages, 4 figures

Journal ref: Appl. Phys. Lett. 116, 032401 (2020)

Large multi-directional spin-to-charge conversion in low symmetry semimetal MoTe$_2$ at room temperature

Authors: C. K. Safeer, Nerea Ontoso, Josep Ingla-Aynés, Franz Herling, Van Tuong Pham, Annika Kurzmann, Klaus Ensslin, Andrey Chuvilin, Iñigo Robredo, Maia G. Vergniory, Fernando de Juan, Luis E. Hueso, M. Reyes Calvo, Fèlix Casanova

Abstract: Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and detect spin currents. In this context, the spin Hall effect has been widely studied in heavy metals with strong spin-orbit coupling. While the high crystal symmetry in these materials limits the conversion to the orthog… ▽ More Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and detect spin currents. In this context, the spin Hall effect has been widely studied in heavy metals with strong spin-orbit coupling. While the high crystal symmetry in these materials limits the conversion to the orthogonal configuration, unusual configurations are expected in low symmetry transition metal dichalcogenide semimetals, which could add flexibility to the electrical injection and detection of pure spin currents. Here, we report the observation of spin-to-charge conversion in MoTe$_2$ flakes, which are stacked in graphene lateral spin valves. We detect two distinct contributions arising from the conversion of two different spin orientations. In addition to the conventional conversion where the spin polarization is orthogonal to the charge current, we also detect a conversion where the spin polarization and the charge current are parallel. Both contributions, which could arise either from bulk spin Hall effect or surface Edelstein effect, show large efficiencies comparable to the best spin Hall metals and topological insulators. Our finding enables the simultaneous conversion of spin currents with any in-plane spin polarization in one single experimental configuration. △ Less

Submitted 10 October, 2019; originally announced October 2019.

Comments: 14 pages, 4 figures, and Supporting Information

Journal ref: Nano Lett. 19, 8758-8766 (2019)

Infrared hyperbolic metasurface based on nanostructured van der Waals materials

Authors: Peining Li, Irene Dolado, Francisco Javier Alfaro-Mozaz, Felix Casanova, Luis E. Hueso, Song Liu, James H. Edgar, Alexey Y. Nikitin, Saül Vélez, Rainer Hillenbrand

Abstract: Metasurfaces with strongly anisotropic optical properties can support deep subwavelength-scale confined electromagnetic waves (polaritons) that promise opportunities for controlling light in photonic and optoelectronic applications. We develop a mid-infrared hyperbolic metasurface by nanostructuring a thin layer of hexagonal boron nitride supporting deep subwavelength-scale phonon polaritons that… ▽ More Metasurfaces with strongly anisotropic optical properties can support deep subwavelength-scale confined electromagnetic waves (polaritons) that promise opportunities for controlling light in photonic and optoelectronic applications. We develop a mid-infrared hyperbolic metasurface by nanostructuring a thin layer of hexagonal boron nitride supporting deep subwavelength-scale phonon polaritons that propagate with in-plane hyperbolic dispersion. By applying an infrared nanoimaging technique, we visualize the concave (anomalous) wavefronts of a diverging polariton beam, which represent a landmark feature of hyperbolic polaritons. The results illustrate how near-field microscopy can be applied to reveal the exotic wavefronts of polaritons in anisotropic materials, and demonstrate that nanostructured van der Waals materials can form a highly variable and compact platform for hyperbolic infrared metasurface devices and circuits. △ Less

Submitted 8 April, 2019; originally announced April 2019.

Journal ref: Science, Vol. 359, Issue 6378, pp. 892-896, 2018

Spin diffusion length of Permalloy using spin absorption in lateral spin valves

Authors: Edurne Sagasta, Yasutomo Omori, Miren Isasa, YoshiChika Otani, Luis E. Hueso, Fèlix Casanova

Abstract: We employ the spin absorption technique in lateral spin valves to extract the spin diffusion length of Permalloy (Py) as a function of temperature and resistivity. A linear dependence of the spin diffusion length with conductivity of Py is observed, evidencing that Elliott-Yafet is the dominant spin relaxation mechanism in Permalloy. Completing the data set with additional data found in literature… ▽ More We employ the spin absorption technique in lateral spin valves to extract the spin diffusion length of Permalloy (Py) as a function of temperature and resistivity. A linear dependence of the spin diffusion length with conductivity of Py is observed, evidencing that Elliott-Yafet is the dominant spin relaxation mechanism in Permalloy. Completing the data set with additional data found in literature, we obtain $λ_{Py}= (0.91\pm 0.04) (fΩm^2)/ρ_{Py}$. △ Less

Submitted 3 April, 2019; originally announced April 2019.

Comments: 8 pages, 4 figures, 2 tables

Journal ref: Appl. Phys. Lett. 111, 082407 (2017)

Interfacial mechanism in the anomalous Hall effect of Co/Bi$_2$O$_3$ bilayers

Authors: Edurne Sagasta, Juan Borge, Luis Esteban, Yasutomo Omori, Martin Gradhand, YoshiChika Otani, Luis E. Hueso, Fèlix Casanova

Abstract: Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi$_2$O$_3$ interface to the anomalous Hall effect of Co is experimentally studied in Co/Bi$_2$O$_3$ bilayers. We evidence a variation of 40% in the AHE of Co when a Bi$_2$O$_3$ cap** layer is added to the ferromagnet. This strong variation is attri… ▽ More Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi$_2$O$_3$ interface to the anomalous Hall effect of Co is experimentally studied in Co/Bi$_2$O$_3$ bilayers. We evidence a variation of 40% in the AHE of Co when a Bi$_2$O$_3$ cap** layer is added to the ferromagnet. This strong variation is attributed to an additional source of asymmetric transport in Co/Bi$_2$O$_3$ bilayers that originates from the Co/Bi$_2$O$_3$ interface and contributes to the skew scattering. △ Less

Submitted 3 April, 2019; originally announced April 2019.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 100, 100407 (2019)

Anomalous Hall-like transverse magnetoresistance in Au thin films on Y$_3$Fe$_5$O$_{12}$

Authors: Tobias Kosub, Saül Vélez, Juan M. Gomez-Perez, Luis E. Hueso, Jürgen Faßbender, Fèlix Casanova, Denys Makarov

Abstract: Anomalous Hall-like signals in platinum in contact with magnetic insulators are common observations that could be explained by either proximity magnetization or spin Hall magnetoresistance. In this work, longitudinal and transverse magnetoresistances are measured in a pure gold thin film on the ferrimagnetic insulator Y$_3$Fe$_5$O$_{12}$ (Yttrium Iron Garnet, YIG). We show that both the longitudin… ▽ More Anomalous Hall-like signals in platinum in contact with magnetic insulators are common observations that could be explained by either proximity magnetization or spin Hall magnetoresistance. In this work, longitudinal and transverse magnetoresistances are measured in a pure gold thin film on the ferrimagnetic insulator Y$_3$Fe$_5$O$_{12}$ (Yttrium Iron Garnet, YIG). We show that both the longitudinal and transverse magnetoresistances have quantitatively consistent scaling in YIG/Au and in a YIG/Pt reference system when applying the Spin Hall magnetoresistance framework. No contribution of an anomalous Hall effect due to the magnetic proximity effect is evident. △ Less

Submitted 14 November, 2018; originally announced November 2018.

Comments: 7 pages, 2 figures and Supplementary Information

Journal ref: Appl. Phys. Lett. 113, 222409 (2018)

Relation between spin Hall effect and anomalous Hall effect in 3$d$ ferromagnetic metals

Authors: Yasutomo Omori, Edurne Sagasta, Yasuhiro Niimi, Martin Gradhand, Luis E. Hueso, Felix Casanova, YoshiChika Otani

Abstract: We study the mechanisms of the spin Hall effect (SHE) and anomalous Hall effect (AHE) in 3$d$ ferromagnetic metals (Fe, Co, permalloy (Ni$_{81}$Fe$_{19}$; Py), and Ni) by varying their resistivities and temperature. At low temperatures where the phonon scattering is negligible, the skew scattering coefficients of the SHE and AHE in Py are related to its spin polarization. However, this simple rela… ▽ More We study the mechanisms of the spin Hall effect (SHE) and anomalous Hall effect (AHE) in 3$d$ ferromagnetic metals (Fe, Co, permalloy (Ni$_{81}$Fe$_{19}$; Py), and Ni) by varying their resistivities and temperature. At low temperatures where the phonon scattering is negligible, the skew scattering coefficients of the SHE and AHE in Py are related to its spin polarization. However, this simple relation breaks down for Py at higher temperatures as well as for the other ferromagnetic metals at any temperature. We find that, in general, the relation between the SHE and AHE is more complex, with the temperature dependence of the SHE being much stronger than that of AHE. △ Less

Submitted 4 January, 2019; v1 submitted 13 November, 2018; originally announced November 2018.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 99, 014403 (2019)