Showing 1–33 of 33 results for author: Huegging, F

Characterisation and simulation of stitched CMOS strip sensors

Authors: Naomi Davis, Jan-Hendrik Arling, Marta Baselga, Leena Diehl, Jochen Dingfelder, Ingrid-Maria Gregor, Marc Hauser, Fabian Hügging, Tomasz Hemperek, Karl Jakobs, Michael Karagounis, Roland Koppenhöfer, Kevin Kröninger, Fabian Lex, Ulrich Parzefall, Arturo Rodriguez, Birkan Sari, Niels Sorgenfrei, Simon Spannagel, Dennis Sperlich, Tianyang Wang, Jens Weingarten, Iveta Zatocilova

Abstract: In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two dif… ▽ More In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed. △ Less

Submitted 14 May, 2024; originally announced May 2024.

Comments: 5 pages, 6 figures, submitted to Nuclear Instruments and Methods in Physics Research, Section A as a conference proceeding for the 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors

Journal ref: Nuclear Instruments and Methods in Physics Research A 1064 (2024) 169407

Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology

Authors: Lars Schall, Christian Bespin, Ivan Caicedo, Jochen Dingfelder, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Konstantinos Moustakas, Heinz Pernegger, Petra Riedler, Walter Snoeys, Norbert Wermes, Sinuo Zhang

Abstract: Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted… ▽ More Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. TJ-Monopix2 is the latest iteration of a DMAPS development line designed in 180 nm TowerSemicondutor technology, which features a large scale (2 x 2) cm$^2$ chip divided into (512 x 512) pixels with a pitch of (33 x 33) um$^2$. All in-pixel electronics are separated from its small collection electrode and process modifications are implemented to improve charge collection efficiency especially after irradiation. The latest laboratory measurements and investigations of a threshold variation observed for TJ-Monopix2 in typical operating conditions are presented. △ Less

Submitted 19 February, 2024; originally announced February 2024.

Comments: Conference proceedings for 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD13), submitted to NIM-A

Characterization, Simulation and Test Beam Data Analysis of Stitched Passive CMOS Strip Sensors

Authors: I. Zatocilova, J. -H. Arling, M. Baselga, N. Davis, L. Diehl, J. Dingfelder, I. -M. Gregor, M. Hauser, T. Hemperek, F. Hügging, K. Jakobs, M. Karagounis, K. Kröninger, F. Lex, U. Parzefall, A. Rodriguez, B. Sari, N. Sorgenfrei, S. Spannagel, D. Sperlich, T. Wang, J. Weingarten

Abstract: In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors w… ▽ More In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors were tested in a probe station and characterised with a Sr90-source as well as laser-based edge- and top-TCT systems. Sensors were also simulated using Sentaurus TCAD. At last, detector modules were constructed from several sensors and thoroughly studied in two beam campaigns at DESY. All of these measurements were performed before and after irradiation. This contribution provides an overview of simulation results, summarises the laboratory measurements and in particular presents first test beam results for irradiated and unirradiated passive CMOS strip sensors. We are demonstrating that large area sensors with sufficient radiation hardness can be obtained by stitching during the CMOS process, and presenting our plans for the next submission in the framework of this project. △ Less

Submitted 15 November, 2023; v1 submitted 28 September, 2023; originally announced September 2023.

Comments: The paper was withdrawn from the publication in JINST journal and will not be published

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology

Authors: Christian Bespin, Ivan Caicedo, Jochen Dingfelder, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Konstantinos Moustakas, Heinz Pernegger, Petra Riedler, Lars Schall, Walter Snoeys, Norbert Wermes

Abstract: Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, fe… ▽ More Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2$\,$cm x 2$\,$cm matrix consisting of 512 x 512 pixels with 33.04$\,$um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of $10^{15}\,1\,$MeV n$_\text{eq}\,$cm$^{-2}$ of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency. △ Less

Submitted 31 January, 2023; originally announced January 2023.

Comments: Conference proceedings for PIXEL2022 conference, submitted to PoS

Characterization of passive CMOS sensors with RD53A pixel modules

Authors: Franz Glessgen, Malte Backhaus, Florencia Canelli, Yannick Manuel Dieter, Jochen Christian Dingfelder, Tomasz Hemperek, Fabian Huegging, Arash Jofrehei, Weijie **, Ben Kilminster, Anna Macchiolo, Daniel Muenstermann, David-Leon Pohl, Branislav Ristic, Rainer Wallny, Tianyang Wang, Norbert Wermes, Pascal Wolf

Abstract: Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS fou… ▽ More Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS foundries to the HEP community, which would be most beneficial in terms of availability, throughput and cost. In addition, the availability of multi-layer routing of signals will provide the freedom to optimize the sensor geometry and the performance, with biasing structures implemented in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototy** production of strip test structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150nm CMOS process. This presentation will focus on the characterization of pixel modules, studying the performance in terms of charge collection, position resolution and hit efficiency with measurements performed in the laboratory and with beam tests. We will report on the investigation of RD53A modules with 25x100 mu^2 cell geometry. △ Less

Submitted 15 November, 2021; originally announced November 2021.

Radiation tolerant, thin, passive CMOS sensors read out with the RD53A chip

Authors: Yannick Dieter, Michael Daas, Jochen Dingfelder, Tomasz Hemperek, Fabian Hügging, Jens Janssen, Hans Krüger, David-Leon Pohl, Marco Vogt, Tianyang Wang, Norbert Wermes, Pascal Wolf

Abstract: The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sens… ▽ More The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sensor design. The performance of a 100 $\mathrmμ$m thin passive CMOS sensor with a pixel pitch of 50 $\mathrmμ$m at different irradiation levels, 5 $\times$ 10$^{15}$n$_{\mathrm{eq}}$cm$^{-2}$ and 1 $\times$ 10$^{16}$n$_{\mathrm{eq}}$cm$^{-2}$, is presented. The sensor was bump-bonded and read out using the RD53A readout chip. After the highest fluence a hit-detection efficiency larger than 99% is measured for minimum ionising particles. The measured equivalent noise charge is comparable to conventional planar pixel sensors. Passive CMOS sensors are thus an attractive option for silicon detectors operating in radiation harsh environments like the upgrades for the LHC experiments. △ Less

Submitted 9 May, 2021; originally announced May 2021.

Comments: 18 pages, 10 figures

DMAPS Monopix developments in large and small electrode designs

Authors: Christian Bespin, Marlon Barbero, Pierre Barrillon, Ivan Berdalovic, Siddharth Bhat, Patrick Breugnon, Ivan Caicedo, Roberto Cardella, Zongde Chen, Yavuz Degerli, Jochen Dingfelder, Leyre Flores Sanz de Acedo, Stephanie Godiot, Fabrice Guilloux, Toko Hirono, Tomasz Hemperek, Fabian Hügging, Hans Krüger, Thanushan Kugathasan, Cesar Augusto Marin Tobon, Konstantinos Moustakas, Patrick Pangaud, Heinz Pernegger, Francesco Piro, Petra Riedler , et al. (8 additional authors not shown)

Abstract: LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows… ▽ More LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams. △ Less

Submitted 9 July, 2020; v1 submitted 3 June, 2020; originally announced June 2020.

Comments: 7 pages, 8 figures. Proceedings of the 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors

BDAQ53, a versatile pixel detector readout and test system for the ATLAS and CMS HL-LHC upgrades

Authors: Michael Daas, Yannick Dieter, Jochen Dingfelder, Markus Frohne, Georgios Giakoustidis, Tomasz Hemperek, Florian Hinterkeuser, Fabian Hügging, Jens Janssen, Hans Krüger, David-Leon Pohl, Piotr Rymaszewski, Mark Standke, Tianyang Wang, Marco Vogt, Norbert Wermes

Abstract: BDAQ53 is a readout system and verification framework for hybrid pixel detector readout chips of the RD53 family. These chips are designed for the upgrade of the inner tracking detectors of the ATLAS and CMS experiments. BDAQ53 is used in applications where versatility and rapid customization are required, such as in laboratory testing environments, test beam campaigns, and permanent setups for qu… ▽ More BDAQ53 is a readout system and verification framework for hybrid pixel detector readout chips of the RD53 family. These chips are designed for the upgrade of the inner tracking detectors of the ATLAS and CMS experiments. BDAQ53 is used in applications where versatility and rapid customization are required, such as in laboratory testing environments, test beam campaigns, and permanent setups for quality control measurements. It consists of custom and commercial hardware, a Python-based software framework, and FPGA firmware. BDAQ53 is developed as open source software with both software and firmware being hosted in a public repository. △ Less

Submitted 5 October, 2020; v1 submitted 22 May, 2020; originally announced May 2020.

Comments: 6 pages, 6 figures

Radiation hard DMAPS pixel sensors in 150nm CMOS technology for operation at LHC

Authors: M. Barbero, P. Barrillon, C. Bespin, S. Bhat, P. Breugnon, I. Caicedo, Z. Chen, Y. Degerli, J. Dingfelder, S. Godiot, F. Guilloux, T. Hemperek, T. Hirono, F. Hügging, H. Krüger, K. Moustakas, A. Ouraou, P. Pangaud, I. Peric, D-L. Pohl, P. Rymaszewski, P. Schwemling, M. Vandenbroucke, T. Wang, N. Wermes

Abstract: Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We develop… ▽ More Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subsequent iterations, from prototypes to a large pixel matrix comprising a complete readout architecture suitable for LHC operation. Full CMOS electronics is embedded in large deep n-wells which at the same time serve as collection nodes (large electrode design). The devices have been intensively characterized before and after irradiation employing lab tests as well as particle beams. The devices can cope with particle rates seen by the innermost pixel detectors of the LHC pp-experiments or as seen by the outer pixel layers of the planned HL-LHC upgrade. They are radiation hard to particle fluences of at least $10^{15}~\mathrm{n_{eq}/cm^2}$ and total ionization doses of at least 50 Mrad. △ Less

Submitted 25 May, 2020; v1 submitted 4 November, 2019; originally announced November 2019.

Journal ref: Journal of Instrumentation, 15 05 (2020) P05013-P05013

Recent Results from Polycrystalline CVD Diamond Detectors

Authors: RD42 Collaboration, L. Bäni, A. Alexopoulos, M. Artuso, F. Bachmair, M. Bartosik, H. Beck, V. Bellini, V. Belyaev, B. Bentele, A. Bes, J. -M. Brom, M. Bruzzi, G. Chiodini, D. Chren, V. Cindro, G. Claus, J. Collot, J. Cumalat, A. Dabrowski, R. D'Alessandro, D. Dauvergne, W. de Boer, C. Dorfer, M. Dünser , et al. (87 additional authors not shown)

Abstract: Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse hei… ▽ More Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse height versus particle rate of unirradiated and irradiated polycrystalline CVD (pCVD) diamond pad detectors up to a particle flux of $20\,\mathrm{MHz/cm^2}$ and a fluence up to $4 \times 10^{15}\,n/\mathrm{cm^2}$. △ Less

Submitted 16 October, 2019; originally announced October 2019.

Comments: Talk presented at the 2019 Meeting of the Division of Particles and Fields of the American Physical Society (DPF2019), July 29 - August 2, 2019, Northeastern University, Boston, C1907293

The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Authors: Ivan Caicedo, Marlon Barbero, Pierre Barrillon, Ivan Berdalovic, Siddharth Bhat, Christian Bespin, Patrick Breugnon, Roberto Cardella, Zongde Chen, Yavuz Degerli, Jochen Dingfelder, Stephanie Godiot, Fabrice Guilloux, Toko Hirono, Tomasz Hemperek, Fabian Hügging, Hans Krüger, Thanushan Kugathasan, Konstantinos Moustakas, Patrick Pangaud, Heinz Pernegger, David-Leon Pohl, Petra Riedler, Alexandre Rozanov, Piotr Rymaszewski , et al. (5 additional authors not shown)

Abstract: Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>… ▽ More Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 $\mathrmμ$m and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of $1\times10^{15}\,\mathrm{n_{eq} / cm}^{2}$ and its implications for future designs are discussed. △ Less

Submitted 25 April, 2019; v1 submitted 10 February, 2019; originally announced February 2019.

Comments: Proceedings of the PIXEL 2018 Workshop

Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC

Authors: Toko Hirono, Marlon Barbero, Pierre Barrillon, Siddharth Bhat, Patrick Breugnon, Ivan Caicedo, Zongde Chen, Michael Daas, Yavuz Degerli, Fabrice Guilloux, Tomasz Hemperek, Fabian Hugging, Hans Kruger, Patrick Pangaud, Piotr Rymaszewski, Philippe Schwemling, Maxence Vandenbroucke, Tianyang Wang, Norbert Wermes

Abstract: Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip s… ▽ More Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is a fully monolithic DMAPS including fast readout digital logic that handles the required hit rate. In order to yield a strong homogeneous electric field within the sensor volume, thinning of the wafer was tested. The prototypes were irradiated with X-ray up to a total ionization dose (TID) of 50 Mrad and with neutrons up to non-ionizing energy loss (NIEL) of $10^{15}$ $n_{eq}/cm^2$. The analog readout circuitry maintained its performance after TID irradiation, and the hit-efficiency at > $10^7$ noise occupancy was as high as 98.9 % after NIEL irradiation. △ Less

Submitted 25 March, 2018; originally announced March 2018.

Production and Integration of the ATLAS Insertable B-Layer

Authors: B. Abbott, J. Albert, F. Alberti, M. Alex, G. Alimonti, S. Alkire, P. Allport, S. Altenheiner, L. Ancu, E. Anderssen, A. Andreani, A. Andreazza, B. Axen, J. Arguin, M. Backhaus, G. Balbi, J. Ballansat, M. Barbero, G. Barbier, A. Bassalat, R. Bates, P. Baudin, M. Battaglia, T. Beau, R. Beccherle , et al. (352 additional authors not shown)

Abstract: During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i… ▽ More During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector. △ Less

Submitted 6 June, 2018; v1 submitted 2 March, 2018; originally announced March 2018.

Comments: 90 pages in total. Author list: ATLAS IBL Collaboration, starting page 2. 69 figures, 20 tables. Published in Journal of Instrumentation. All figures available at: https://atlas.web.cern.ch/Atlas/GROUPS/PHYSICS/PLOTS/PIX-2018-001

Journal ref: Journal of Instrumentation JINST 13 T05008 (2018)

Development of depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

Authors: Piotr Rymaszewski, Marlon Barbero, Siddharth Bhat, Patrick Breugnon, Ivan Caicedo, Zongde Chen, Yavuz Degerli, Stephanie Godiot, Fabrice Guilloux, Claude Guyot, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Mohamed Lachkar, Patrick Pangaud, Alexandre Rozanov, Philippe Schwemling, Maxence Vandenbroucke, Tianyang Wang, Norbert Wermes

Abstract: This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a… ▽ More This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a device in the detector module will result in a lower production cost and lower material budget compared to the presently used hybrid designs. In this paper the chip architecture will be described followed by the simulation and measurement results. △ Less

Submitted 15 November, 2017; v1 submitted 3 November, 2017; originally announced November 2017.

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Authors: T. Wang, M. Barbero, I. Berdalovic, C. Bespin, S. Bhat, P. Breugnon, I. Caicedo, R. Cardella, Z. Chen, Y. Degerli, N. Egidos, S. Godiot, F. Guilloux, T. Hemperek, T. Hirono, H. Krüger, T. Kugathasan, F. Hügging, C. A. Marin Tobon, K. Moustakas, P. Pangaud, P. Schwemling, H. Pernegger, D-L. Pohl, A. Rozanov , et al. (3 additional authors not shown)

Abstract: Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being develo… ▽ More Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150~nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180~nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown. △ Less

Submitted 29 September, 2017; originally announced October 2017.

Comments: International Workshop on Radiation Imaging Detectors 2017

Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

Authors: D. -L. Pohl, T. Hemperek, I. Caicedo, L. Gonella, F. Hügging, J. Janssen, H. Krüger, A. Macchiolo, N. Owtscharenko, L. Vigani, N. Wermes

Abstract: Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-… ▽ More Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 $\times$ 10$^{15}$ n$_{\rm eq}$ cm$^{-2}$. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation. △ Less

Submitted 2 March, 2017; v1 submitted 16 February, 2017; originally announced February 2017.

Comments: 10 pages, 6 figures

Neutron irradiation test of depleted CMOS pixel detector prototypes

Authors: Igor Mandić, Vladimir Cindro, Andrej Gorišek, Bojan Hiti, Gregor Kramberger, Marko Mikuž, Marko Zavrtanik, Tomasz Hemperek, Michael Daas, Fabian Hügging, Hans Krügerc, David-Leon Pohl, Norbert Wermes, Laura Gonella

Abstract: Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$Ω$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive d… ▽ More Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$Ω$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1$\cdot$10$^{13}$ n/cm$^{2}$ and 5$\cdot$10$^{13}$ n/cm$^{2}$ and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1$\cdot$10$^{15}$ n/cm$^{2}$ is more than 50 $μ$m at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments. △ Less

Submitted 18 January, 2017; originally announced January 2017.

Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment

Authors: Toko Hirono, Marlon Barbero, Patrick Breugnon, Stéphanie Godiot, Tomasz Hemperek, Fabian Hügging, Jens Janssen, Hans Krüger, Jian Liu, Patrick Pangaud, Ivan Perić, David-Leon Pohl, Alexandre Rozanov, Piotr Rymaszewski, Norbert Wermes

Abstract: Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS… ▽ More Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS was fabricated in a 150nm CMOS process on a substrate with a resistivity of >2 kΩcm that was thinned to 100 μm. Full depletion occurs around 20V, which is far below the breakdown voltage of 110 V. A readout chip has been attached for fast triggered readout. Presented prototype also uses a concept of sub-pixel en/decoding three pixels of the prototype chip are readout by one pixel of the readout chip. Since radiation tolerance is one of the largest concerns in DMAPS, the CCPD_LF chip has been irradiated with X-rays and neutrons up to a total ionization dose of 50 Mrad and a fluence of 10E15neq/cm2, respectively. △ Less

Submitted 9 December, 2016; originally announced December 2016.

Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade

Authors: Piotr Rymaszewski, Marlon Barbero, Patrick Breugnon, Stépahnie Godiot, Laura Gonella, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Jian Liu, Patrick Pangaud, Ivan Peric, Alexandre Rozanov, Anqing Wang, Norbert Wermes

Abstract: The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prot… ▽ More The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results. △ Less

Submitted 4 January, 2016; originally announced January 2016.

Comments: 9 pages, 9 figures, TWEPP 2015 Conference, submitted to JINST

A method for precise charge reconstruction with pixel detectors using binary hit information

Authors: David-Leon Pohl, Jens Janssen, Tomasz Hemperek, Fabian Hügging, Norbert Wermes

Abstract: A method is presented to precisely reconstruct charge spectra with pixel detectors using binary hit information of individual pixels. The method is independent of the charge information provided by the readout circuitry and has a resolution mainly limited by the electronic noise. It relies on the ability to change the detection threshold in small steps while counting hits from a particle source. T… ▽ More A method is presented to precisely reconstruct charge spectra with pixel detectors using binary hit information of individual pixels. The method is independent of the charge information provided by the readout circuitry and has a resolution mainly limited by the electronic noise. It relies on the ability to change the detection threshold in small steps while counting hits from a particle source. The errors are addressed and the performance of the method is shown based on measurements with the ATLAS pixel chip FE-I4 bump bonded to a 230 μm 3D-silicon sensor. Charge spectra from radioactive sources and from electron beams are presented serving as examples. It is demonstrated that a charge resolution (σ<200 e) close to the electronic noise of the ATLAS FE-I4 pixel chip can be achieved. △ Less

Submitted 15 August, 2014; v1 submitted 13 August, 2014; originally announced August 2014.

Signal and noise of Diamond Pixel Detectors at High Radiation Fluences

Authors: Jieh-Wen Tsung, Miroslav Havranek, Fabian Hügging, Harris Kagan, Hans Krüger, Norbert Wermes

Abstract: CVD diamond is an attractive material option for LHC vertex detectors because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal… ▽ More CVD diamond is an attractive material option for LHC vertex detectors because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal from traversing high energy particles is smaller in diamond than in silicon by a factor of about 2.2. Therefore, a quantitative determination of the signal-to-noise ratio (S/N) of diamond in comparison with silicon at fluences in excess of 10$^{15}$ n$_{eq}$ cm$^{-2}$, which are expected for the LHC upgrade, is important. Based on measurements of irradiated diamond sensors and the FE-I4 pixel readout chip design, we determine the signal and the noise of diamond pixel detectors irradiated with high particle fluences. To characterize the effect of the radiation damage on the materials and the signal decrease, the change of the mean free path $λ_{e/h}$ of the charge carriers is determined as a function of irradiation fluence. We make use of the FE-I4 pixel chip developed for ATLAS upgrades to realistically estimate the expected noise figures: the expected leakage current at a given fluence is taken from calibrated calculations and the pixel capacitance is measured using a purposely developed chip (PixCap). We compare the resulting S/N figures with those for planar silicon pixel detectors using published charge loss measurements and the same extrapolation methods as for diamond. It is shown that the expected S/N of a diamond pixel detector with pixel pitches typical for LHC, exceeds that of planar silicon pixels at fluences beyond 10$^{15}$ particles cm$^{-2}$, the exact value only depending on the maximum operation voltage assumed for irradiated silicon pixel detectors. △ Less

Submitted 13 August, 2012; v1 submitted 28 June, 2012; originally announced June 2012.

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

Authors: A. La Rosa, M. Boscardin, M. Cobal, G. -F. Dalla Betta, C. Da Via, G. Darbo, C. Gallrapp, C. Gemme, F. Huegging, J. Janssen, A. Micelli, H. Pernegger, M. Povoli, N. Wermes, N. Zorzi

Abstract: In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laborato… ▽ More In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation. △ Less

Submitted 19 March, 2012; v1 submitted 13 December, 2011; originally announced December 2011.

Comments: Preprint submitted to Nuclear Instruments and Methods A, 11 pages, 13 figs

Journal ref: Nucl. Instrum. Meth. A681 (2012) 25

Functional characterization of irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

Authors: A. La Rosa, M. Boscardin, M. Cobal, C. Da Viá, G. F. Dalla Betta, G. Darbo, C. Gallrapp, C. Gemme, F. Huegging, J. Janssen, A. Micelli, H. Pernegger, M. Povoli, N. Wermes, N. Zorzi

Abstract: In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. △ Less

Submitted 9 December, 2011; v1 submitted 25 August, 2011; originally announced August 2011.

Comments: This paper has been withdrawn by the author due to an update of some results

Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

Authors: ATLAS 3D Collaboration, P. Grenier, G. Alimonti, M. Barbero, R. Bates, E. Bolle, M. Borri, M. Boscardin, C. Buttar, M. Capua, M. Cavalli-Sforza, M. Cobal, A. Cristofoli, G-F. Dalla Betta, G. Darbo, C. Da Vià, E. Devetak, B. DeWilde, B. Di Girolamo, D. Dobos, K. Einsweiler, D. Esseni, S. Fazio, C. Fleta, J. Freestone , et al. (68 additional authors not shown)

Abstract: Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sen… ▽ More Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlap** bias and read-out electrodes were tested and showed comparable performance. △ Less

Submitted 21 January, 2011; originally announced January 2011.

Journal ref: Nucl.Instrum.Meth.A638:33-40,2011

A Layer Correlation technique for pion energy calibration at the 2004 ATLAS Combined Beam Test

Authors: E. Abat, J. M. Abdallah, T. N. Addy, P. Adragna, M. Aharrouche, A. Ahmad, T. P. A. Akesson, M. Aleksa, C. Alexa, K. Anderson, A. Andreazza, F. Anghinolfi, A. Antonaki, G. Arabidze, E. Arik, T. Atkinson, J. Baines, O. K. Baker, D. Banfi, S. Baron, A. J. Barr, R. Beccherle, H. P. Beck, B. Belhorma, P. J. Bell , et al. (460 additional authors not shown)

Abstract: A new method for calibrating the hadron response of a segmented calorimeter is developed and successfully applied to beam test data. It is based on a principal component analysis of energy deposits in the calorimeter layers, exploiting longitudinal shower development information to improve the measured energy resolution. Corrections for invisible hadronic energy and energy lost in dead material in… ▽ More A new method for calibrating the hadron response of a segmented calorimeter is developed and successfully applied to beam test data. It is based on a principal component analysis of energy deposits in the calorimeter layers, exploiting longitudinal shower development information to improve the measured energy resolution. Corrections for invisible hadronic energy and energy lost in dead material in front of and between the calorimeters of the ATLAS experiment were calculated with simulated Geant4 Monte Carlo events and used to reconstruct the energy of pions im**ing on the calorimeters during the 2004 Barrel Combined Beam Test at the CERN H8 area. For pion beams with energies between 20 GeV and 180 GeV, the particle energy is reconstructed within 3% and the energy resolution is improved by between 11% and 25% compared to the resolution at the electromagnetic scale. △ Less

Submitted 12 May, 2011; v1 submitted 20 December, 2010; originally announced December 2010.

Comments: 36 pages, 12 figures, accepted by JINST

Report number: ATL-COM-CAL-2010-006

Journal ref: JINST 6 (2011) P06001

The ATLAS Pixel Insertable B-Layer (IBL)

Authors: Fabian Hügging

Abstract: The ATLAS Detector will be upgraded for higher intensity running of the LHC. A long shutdown is envisioned in 2016 prior to the so-called Phase I running. A new pixel layer, called the Insertable B-Layer (IBL), will be inserted at a radius of about 3.2~cm between the existing Pixel Detector and a new (smaller radius) beam-pipe. The IBL requires the development of several new technologies to cope w… ▽ More The ATLAS Detector will be upgraded for higher intensity running of the LHC. A long shutdown is envisioned in 2016 prior to the so-called Phase I running. A new pixel layer, called the Insertable B-Layer (IBL), will be inserted at a radius of about 3.2~cm between the existing Pixel Detector and a new (smaller radius) beam-pipe. The IBL requires the development of several new technologies to cope with the increased radiation level and pixel occupancy, as well as to improve the physics performance of the existing Pixel Detector. The IBL project provides a test of technologies for the Phase II upgrade of the entire ATLAS tracker for luminosities around 10^35 cm^-2s^-1. An overview of the project with particular emphasis on the IBL layout and expected performance as well as the module development including hybridization technologies is presented. △ Less

Submitted 13 December, 2010; originally announced December 2010.

Comments: 7 pages, 5 figures, 4 tables, accepted by Nuclear Instruments and Methods A for publication

Preliminary results of 3D-DDTC pixel detectors for the ATLAS upgrade

Authors: A. La Rosa, M. Boscardin, G. -F. Dalla Betta, G. Darbo, C. Gemme, H. Pernegger, C. Piemonte, M. Povoli, S. Ronchin, A. Zoboli, N. Zorzi, E. Bolle, M. Borri, C. Da Via, S. Dong, S. Fazio, P. Grenier, S. Grinstein, H. Gjersdal, P. Hansson, F. Huegging, P. Jackson, M. Kocian, F. Rivero, O. Rohne , et al. (7 additional authors not shown)

Abstract: 3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200um, and different column depths are available, with overlaps between junction c… ▽ More 3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200um, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110um to 150um. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3) at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am241 gamma-ray sources, charge collection tests with Sr90 beta-source and an overview of preliminary results from the CERN beam test. △ Less

Submitted 20 October, 2009; originally announced October 2009.

Comments: 8 pages, 8 figures, presented at RD09 - 9th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, 30 September - 2 October 2009, Florence, Italy

Journal ref: Proceeding of Science PoS(RD09)032 (2009)

Expected Performance of the ATLAS Experiment - Detector, Trigger and Physics

Authors: The ATLAS Collaboration, G. Aad, E. Abat, B. Abbott, J. Abdallah, A. A. Abdelalim, A. Abdesselam, O. Abdinov, B. Abi, M. Abolins, H. Abramowicz, B. S. Acharya, D. L. Adams, T. N. Addy, C. Adorisio, P. Adragna, T. Adye, J. A. Aguilar-Saavedra, M. Aharrouche, S. P. Ahlen, F. Ahles, A. Ahmad, H. Ahmed, G. Aielli, T. Akdogan , et al. (2587 additional authors not shown)

Abstract: A detailed study is presented of the expected performance of the ATLAS detector. The reconstruction of tracks, leptons, photons, missing energy and jets is investigated, together with the performance of b-tagging and the trigger. The physics potential for a variety of interesting physics processes, within the Standard Model and beyond, is examined. The study comprises a series of notes based on… ▽ More A detailed study is presented of the expected performance of the ATLAS detector. The reconstruction of tracks, leptons, photons, missing energy and jets is investigated, together with the performance of b-tagging and the trigger. The physics potential for a variety of interesting physics processes, within the Standard Model and beyond, is examined. The study comprises a series of notes based on simulations of the detector and physics processes, with particular emphasis given to the data expected from the first years of operation of the LHC at CERN. △ Less

Submitted 14 August, 2009; v1 submitted 28 December, 2008; originally announced January 2009.

Alignment of the Pixel and SCT Modules for the 2004 ATLAS Combined Test Beam

Authors: A. Ahmad, A. Andreazza, T. Atkinson, J. Baines, A. J. Barr, R. Beccherle, P. J. Bell, J. Bernabeu, Z. Broklova, P. A. Bruckman de Renstrom, D. Cauz, L. Chevalier, S. Chouridou, M. Citterio, A. Clark, M. Cobal, T. Cornelissen, S. Correard, M. J. Costa, D. Costanzo, S. Cuneo, M. Dameri, G. Darbo, J. B. de Vivie, B. Di Girolamo , et al. (104 additional authors not shown)

Abstract: A small set of final prototypes of the ATLAS Inner Detector silicon tracker (Pixel and SCT) were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated u… ▽ More A small set of final prototypes of the ATLAS Inner Detector silicon tracker (Pixel and SCT) were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated using the known momenta of the beam particles and were shown to yield consistent results among the different alignment approaches. From the residual distributions, it is concluded that the precision attained in the alignment of the silicon modules is of the order of 5 micrometers in their most precise coordinate. △ Less

Submitted 26 May, 2008; originally announced May 2008.

Comments: 22 pages, submitted to JINST, 129 authors

Journal ref: JINST 3:P09004,2008

Concept, realization and characterization of serially powered pixel modules (Serial Powering)

Authors: D. B. Ta, T. Stockmanns, F. Huegging, P. Fischer, J. Grosse-Knetter Oe. Runolfsson, N. Wermes

Abstract: We prove and demonstrate here for the example of the large scale pixel detector of ATLAS that Serial Powering of pixel modules is a viable alternative and that has been devised and implemented for ATLAS pixel modules using dedicated on-chip voltage regulators and modified flex hybrids circuits. The equivalent of a pixel ladder consisting of six serially powered pixel modules with about 0.3Mpixel… ▽ More We prove and demonstrate here for the example of the large scale pixel detector of ATLAS that Serial Powering of pixel modules is a viable alternative and that has been devised and implemented for ATLAS pixel modules using dedicated on-chip voltage regulators and modified flex hybrids circuits. The equivalent of a pixel ladder consisting of six serially powered pixel modules with about 0.3Mpixels has been built and the performance with respect to noise and threshold stability and operation failures has been studied. We believe that Serial Powering in general will be necessary for future large scale tracking detectors. △ Less

Submitted 24 April, 2006; originally announced April 2006.

Comments: 7 Pages Poster presentation at Pixel 2005, Bonn, Germany Oral presentation 11th Workshop on electronics for LHC and future experiments, Heidelberg, Germany Oral presentation ATLAS Tracker Upgrade Workshop, Genova, Italy This paper is a short version of the following paper: D.B. Ta et al. Serial Powering: Proof of principle demonstration of a scheme for the operation of a large pixel detector at the LHC, Nucl. Instr. & Meth. A557 (2006) 445--459

Journal ref: Nucl.Instrum.Meth. A565 (2006) 113-118

System Tests of the ATLAS Pixel Detector

Authors: K. Reeves, K. -H. Becks, T. Flick, P. Gerlach, J. Grosse-Knetter, F. Huegging, M. Imhaeuser, S. Kersten, P. Kind, K. Lantzsch, P. Mattig, I. Rottlaender, J. Richter, J. Schultes, J. Schumacher, J. Weingarten, N. Wermes

Abstract: The innermost part of the ATLAS (A Toroidal LHC ApparatuS) experiment at the LHC (Large Hadron Collider) will be a pixel detector, which is presently under construction. Once installed into the experimental area, access will be extremely limited. To ensure that the integrated detector assembly operates as expected, a fraction of the detector which includes the power supplies and monitoring syste… ▽ More The innermost part of the ATLAS (A Toroidal LHC ApparatuS) experiment at the LHC (Large Hadron Collider) will be a pixel detector, which is presently under construction. Once installed into the experimental area, access will be extremely limited. To ensure that the integrated detector assembly operates as expected, a fraction of the detector which includes the power supplies and monitoring system, the optical readout, and the pixel modules themselves, has been assembled and operated in a laboratory setting for what we refer to as system tests. Results from these tests are presented. △ Less

Submitted 5 January, 2006; originally announced January 2006.

Comments: 5 Pages, 9 Figures, to appear in Proceedings of the Eleventh Workshop on Electronics for LHC and Future Experiments

Report number: CERN-2005-011

The ATLAS Pixel Detector

Authors: Fabian Huegging

Abstract: The contruction of the ATLAS Pixel Detector which is the innermost layer of the ATLAS tracking system is prgressing well. Because the pixel detector will contribute significantly to the ATLAS track and vertex reconstruction. The detector consists of identical sensor-chip-hybrid modules, arranged in three barrels in the centre and three disks on either side for the forward region. The position of… ▽ More The contruction of the ATLAS Pixel Detector which is the innermost layer of the ATLAS tracking system is prgressing well. Because the pixel detector will contribute significantly to the ATLAS track and vertex reconstruction. The detector consists of identical sensor-chip-hybrid modules, arranged in three barrels in the centre and three disks on either side for the forward region. The position of the detector near the interaction point requires excellent radiation hardness, mechanical and thermal robustness, good long-term stability for all parts, combined with a low material budget. The final detector layout, new results from production modules and the status of assembly are presented. △ Less

Submitted 5 August, 2005; v1 submitted 21 December, 2004; originally announced December 2004.

Comments: Talk at the IEEE NSS 2004 conference, Rome, Italy, October 2004, 5 pages, LaTeX, 11 eps figures. Minor revision of the paper, i.e. typos added, figures redrawn according to the reviewer's comments

Report number: BONN-IP-2004-12

Journal ref: IEEE Trans.Nucl.Sci. 53 (2006) 1732-1736

Front-End electronics and integration of ATLAS pixel modules

Authors: Fabian Huegging

Abstract: For the ATLAS Pixel Detector fast readout electronics has been successfully developed and tested. Main attention was given to the ability to detect small charges in the order of 5,000 electrons within 25 ns in the harsh radiation environment of LHC together with the challenge to cope with the huge amount of data generated by the 80 millions channels of the Pixel detector. For the integration of… ▽ More For the ATLAS Pixel Detector fast readout electronics has been successfully developed and tested. Main attention was given to the ability to detect small charges in the order of 5,000 electrons within 25 ns in the harsh radiation environment of LHC together with the challenge to cope with the huge amount of data generated by the 80 millions channels of the Pixel detector. For the integration of the 50 micron pitch hybrid pixel detector reliable bump bonding techniques using either lead-tin or indium bumps has been developed and has been successfully tested for large scale production. △ Less

Submitted 21 January, 2004; originally announced January 2004.

Comments: Talk at the VERTEX2003 conference, Lake Windermere, UK, September 2003, 8 pages, LaTeX, 6 eps figures

Journal ref: Nucl.Instrum.Meth.A549:157-164,2005