Showing 1–5 of 5 results for author: Hudak, B M

Room-temperature oxygen transport in nano-thin BixOySez enables precision modulation of 2D materials

Authors: Zachariah Hennighausen, Bethany M. Hudak, Madeleine Phillips, Jisoo Moon, Kathleen M. McCreary, Hsun-Jen Chuang, Matthew R. Rosenberger, Berend T. Jonker, Connie H. Li, Rhonda M. Stroud, Olaf M. van't Erve

Abstract: Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-gen optoelectronics. Here, we synthesize a few nano… ▽ More Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-gen optoelectronics. Here, we synthesize a few nanometer-thick BixOySez compound that strongly resembles a rare R3m bismuth oxide (Bi2O3) phase, and combine it with monolayer TMDs, which are highly sensitive to their environment. We use the resulting 2D heterostructure to study oxygen transport through BixOySez into the interlayer region, whereby the 2D material properties are modulated, finding extraordinarily fast diffusion at room temperature under laser exposure. The oxygen diffusion enables reversible and precise modification of the 2D material properties by controllably intercalating and deintercalating oxygen. Changes are spatially confined, enabling submicron features (e.g. pixels), and are long-term stable for more than 221 days. Our work suggests few nanometer-thick BixOySez is a promising unexplored room-temperature oxygen transporter. Additionally, our findings suggest the mechanism can be applied to other 2D materials as a generalized method to manipulate their properties with high precision and submicron spatial resolution. △ Less

Submitted 13 March, 2022; originally announced March 2022.

Laser-patterned submicron Bi2Se3-WS2 pixels with tunable circular polarization at room temperature

Authors: Zachariah Hennighausen, Darshana Wickramaratne, Kathleen M. McCreary, Bethany M. Hudak, Todd Brintlinger, Hsun-Jen Chuang, Mehmet A. Noyan, Berend T. Jonker, Rhonda M. Stroud, Olaf M. vant Erve

Abstract: Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer tungsten disulfide (WS2) is a versatile material that has demonstrated promise in a variety of applications, including single photon emitters and valleytronics. Here, we demonstrate a method to tune the photoluminescence… ▽ More Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer tungsten disulfide (WS2) is a versatile material that has demonstrated promise in a variety of applications, including single photon emitters and valleytronics. Here, we demonstrate a method to tune the photoluminescence (PL) intensity (factor of x161), peak position (38.4meV range), circular polarization (39.4% range), and valley polarization of a Bi2Se3-WS2 2D heterostructure using a low-power laser (0.762uW) in ambient. Changes are spatially confined to the laser spot, enabling submicron (814nm) features, and are long-term stable (>334 days). PL and valley polarization changes can be controllably reversed through laser exposure in vacuum, allowing the material to be erased and reused. Atmospheric experiments and first-principles calculations indicate oxygen diffusion modulates the exciton radiative vs. non-radiative recombination pathways, where oxygen absorption leads to brightening, and desorption to darkening. △ Less

Submitted 15 February, 2022; originally announced February 2022.

Comments: Published: ACS Appl. Mater. Interfaces 2022

Mechanism of electron-beam manipulation of single dopant atoms in silicon

Authors: Alexander Markevich, Bethany M Hudak, Jacob Madsen, Jiaming Song, Paul C Snijders, Andrew R Lupini, Toma Susi

Abstract: The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the manipulation of surface atoms, but at a disadvantage due to their need to bring a physical tip into contact with the sample. This has prompted interest in electron-beam te… ▽ More The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the manipulation of surface atoms, but at a disadvantage due to their need to bring a physical tip into contact with the sample. This has prompted interest in electron-beam techniques, followed by the first proof-of-principle experiment of bismuth dopant manipulation in crystalline silicon. Here, we use first principles modeling to discover a novel indirect exchange mechanism that allows electron impacts to non-destructively move dopants with atomic precision within the silicon lattice. However, this mechanism only works for the two heaviest group V donors with split-vacancy configurations, Bi and Sb. We verify our model by directly imaging these configurations for Bi, and by demonstrating that the promising nuclear spin qubit Sb can be manipulated using a focused electron beam. △ Less

Submitted 25 June, 2021; originally announced June 2021.

Comments: 23 pages, 4 figures, 1 table

Deep analytics of atomically-resolved images: manifest and latent features

Authors: Maxim Ziatdinov, Ondrej Dyck, Artem Maksov, Bethany M. Hudak, Andrew R. Lupini, Jiaming Song, Paul C. Snijders, Rama K. Vasudevan, Stephen Jesse, Sergei V. Kalinin

Abstract: Recent advances in scanning transmission electron and scanning tunneling microscopies allow researchers to measure materials structural and electronic properties, such as atomic displacements and charge density modulations, at an Angstrom scale in real space. At the same time, the ability to quickly acquire large, high-resolution datasets has created a challenge for rapid physics-based analysis of… ▽ More Recent advances in scanning transmission electron and scanning tunneling microscopies allow researchers to measure materials structural and electronic properties, such as atomic displacements and charge density modulations, at an Angstrom scale in real space. At the same time, the ability to quickly acquire large, high-resolution datasets has created a challenge for rapid physics-based analysis of images that typically contain several hundreds to several thousand atomic units. Here we demonstrate a universal deep-learning based framework for locating and characterizing atomic species in the lattice, which can be applied to different types of atomically resolved measurements on different materials. Specifically, by inspecting and categorizing features in the output layer of a convolutional neural network, we are able to detect structural and electronic 'anomalies' associated with the presence of point defects in a tungsten disulfide monolayer, non-uniformity of the charge density distribution around specific lattice sites on the surface of strongly correlated oxides, and transition between different structural states of buckybowl molecules. We further extended our method towards tracking, from one image frame to another, minute distortions in the geometric shape of individual Si dumbbells in a 3-dimensional Si sample, which are associated with a motion of lattice defects and impurities. Due the applicability of our framework to both scanning tunneling microscopy and scanning transmission electron microscopy measurements, it can provide a fast and straightforward way towards creating a unified database of defect-property relationships from experimental data for each material. △ Less

Submitted 16 January, 2018; originally announced January 2018.

Direct atomic fabrication and dopant positioning in Si using electron beams with active real time image-based feedback

Authors: Stephen Jesse, Bethany M. Hudak, Eva Zarkadoula, Jiaming Song, Artem Maksov, Miguel Fuentes-Cabrera, Panchapakesan Ganesh, Ivan Kravchenko, Paul C. Snijders, Andrew R. Lupini, Albina Borisevich, Sergei V. Kalinin

Abstract: Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's Law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as t… ▽ More Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's Law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant-front motion. These phenomena are visualized in real time with atomic resolution. We further implement active feedback control based on real-time image analytics to control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology. △ Less

Submitted 15 November, 2017; originally announced November 2017.