Showing 1–8 of 8 results for author: Huang, W W

Ultra-long relaxation of a Kramers qubit formed in a bilayer graphene quantum dot

Authors: Artem O. Denisov, Veronika Reckova, Solenn Cances, Max J. Ruckriegel, Michele Masseroni, Christoph Adam, Chuyao Tong, Jonas D. Gerber, Wei Wister Huang, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin, Hadrien Duprez

Abstract: The intrinsic valley degree of freedom makes bilayer graphene a unique platform for emerging types of semiconducting qubits. The single-carrier quantum dot ground state exhibits a two-fold degeneracy where the two states have opposite spin and valley quantum numbers. By breaking the time-reversal symmetry of this ground state with an out-of-plane magnetic field, a novel type of qubit (Kramers qubi… ▽ More The intrinsic valley degree of freedom makes bilayer graphene a unique platform for emerging types of semiconducting qubits. The single-carrier quantum dot ground state exhibits a two-fold degeneracy where the two states have opposite spin and valley quantum numbers. By breaking the time-reversal symmetry of this ground state with an out-of-plane magnetic field, a novel type of qubit (Kramers qubit), encoded in the two-dimensional spin-valley subspace, becomes accessible. The Kramers qubit is robust against known spin- and valley-mixing mechanisms, as it requires a simultaneous change of both quantum numbers, potentially resulting in long relaxation and coherence times. We measure the relaxation time of a single carrier in the excited states of a bilayer graphene quantum dot at small ($\sim \mathrm{mT}$) and zero magnetic fields. We demonstrate ultra-long spin-valley relaxation times of the Kramers qubit exceeding $30~\mathrm{s}$, which is about two orders of magnitude longer than the spin relaxation time of $400~\mathrm{ms}$. The demonstrated high-fidelity single-shot readout and long relaxation times are the foundation for novel, long-lived semiconductor qubits. △ Less

Submitted 12 March, 2024; originally announced March 2024.

Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator

Authors: Max J. Ruckriegel, Lisa M. Gächter, David Kealhofer, Mohsen Bahrami Panah, Chuyao Tong, Christoph Adam, Michele Masseroni, Hadrien Duprez, Rebekka Garreis, Kenji Watanabe, Takashi Taniguchi, Andreas Wallraff, Thomas Ihn, Klaus Ensslin, Wei Wister Huang

Abstract: We implement circuit quantum electrodynamics (cQED) with quantum dots in bilayer graphene, a maturing material platform for semiconductor qubits that can host long-lived spin and valley states. The presented device combines a high-impedance ($Z_\mathrm{r} \approx 1 \mathrm{kΩ}$) superconducting microwave resonator with a double quantum dot electrostatically defined in a graphene-based van der Waal… ▽ More We implement circuit quantum electrodynamics (cQED) with quantum dots in bilayer graphene, a maturing material platform for semiconductor qubits that can host long-lived spin and valley states. The presented device combines a high-impedance ($Z_\mathrm{r} \approx 1 \mathrm{kΩ}$) superconducting microwave resonator with a double quantum dot electrostatically defined in a graphene-based van der Waals heterostructure. Electric dipole coupling between the subsystems allows the resonator to sense the electric susceptibility of the double quantum dot from which we reconstruct its charge stability diagram. We achieve sensitive and fast detection with a signal-to-noise ratio of 3.5 within 1 $μ\mathrm{s}$ integration time. The charge-photon interaction is quantified in the dispersive and resonant regimes by comparing the coupling-induced change in the resonator response to input-output theory, yielding a maximal coupling strength of $g/2π = 49.7 \mathrm{MHz}$. Our results introduce cQED as a probe for quantum dots in van der Waals materials and indicate a path toward coherent charge-photon coupling with bilayer graphene quantum dots. △ Less

Submitted 29 January, 2024; v1 submitted 22 December, 2023; originally announced December 2023.

Comments: 9 pages, 4 figures

Long-lived valley states in bilayer graphene quantum dots

Authors: Rebekka Garreis, Chuyao Tong, Jocelyn Terle, Max Josef Ruckriegel, Jonas Daniel Gerber, Lisa Maria Gächter, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin, Wei Wister Huang

Abstract: Bilayer graphene is a promising platform for electrically controllable qubits in a two-dimensional material. Of particular interest is the ability to encode quantum information in the so-called valley degree of freedom, a two-fold orbital degeneracy that arises from the symmetry of the hexagonal crystal structure. The use of valleys could be advantageous, as known spin- and orbital-mixing mechanis… ▽ More Bilayer graphene is a promising platform for electrically controllable qubits in a two-dimensional material. Of particular interest is the ability to encode quantum information in the so-called valley degree of freedom, a two-fold orbital degeneracy that arises from the symmetry of the hexagonal crystal structure. The use of valleys could be advantageous, as known spin- and orbital-mixing mechanisms are unlikely to be at work for valleys, promising more robust qubits. The Berry curvature associated with valley states allows for electrical control of their energies, suggesting routes for coherent qubit manipulation. However, the relaxation time of valley states -- which ultimately limits these qubits' coherence properties and therefore their suitability as practical qubits -- is not yet known. Here, we measure the characteristic relaxation times of these spin and valley states in gate-defined bilayer graphene quantum dot devices. Different valley states can be distinguished from each other with a fidelity of over 99%. The relaxation time between valley triplets and singlets exceeds 500ms, and is more than one order of magnitude longer than for spin states. This work facilitates future measurements on valley-qubit coherence, demonstrating bilayer graphene as a practical platform hosting electrically controlled long-lived valley qubits. △ Less

Submitted 23 January, 2024; v1 submitted 3 April, 2023; originally announced April 2023.

Comments: Rebekka Garreis and Chuyao Tong contributed equally to this paper. Nat. Phys. (2024)

Journal ref: Nature Phys. 20, 428-434 (2024)

Three-carrier spin blockade and coupling in bilayer graphene double quantum dots

Authors: Chuyao Tong, Florian Ginzel, Wei Wister Huang, Annika Kurzmann, Rebekka Garreis, Kenji Watanabe, Takashi Taniguchi, Guido Burkard, Jeroen Danon, Thomas Ihn, Klaus Ensslin

Abstract: The spin degree of freedom is crucial for the understanding of any condensed matter system. Knowledge of spin-mixing mechanisms is not only essential for successful control and manipulation of spin-qubits, but also uncovers fundamental properties of investigated devices and material. For electrostatically-defined bilayer graphene quantum dots, in which recent studies report spin-relaxation times T… ▽ More The spin degree of freedom is crucial for the understanding of any condensed matter system. Knowledge of spin-mixing mechanisms is not only essential for successful control and manipulation of spin-qubits, but also uncovers fundamental properties of investigated devices and material. For electrostatically-defined bilayer graphene quantum dots, in which recent studies report spin-relaxation times T1 up to 50ms with strong magnetic field dependence, we study spin-blockade phenomena at charge configuration $(1,2)\leftrightarrow(0,3)$. We examine the dependence of the spin-blockade leakage current on interdot tunnel coupling and on the magnitude and orientation of externally applied magnetic field. In out-of-plane magnetic field, the observed zero-field current peak could arise from finite-temperature co-tunneling with the leads; though involvement of additional spin- and valley-mixing mechanisms are necessary for explaining the persistent sharp side peaks observed. In in-plane magnetic field, we observe a zero-field current dip, attributed to the competition between the spin Zeeman effect and the Kane-Mele spin-orbit interaction. Details of the line shape of this current dip however, suggest additional underlying mechanisms are at play. △ Less

Submitted 9 November, 2022; originally announced November 2022.

Single-shot readout in graphene quantum dots

Authors: Lisa Maria Gächter, Rebekka Garreis, Chuyao Tong, Max Josef Ruckriegel, Benedikt Kratochwil, Folkert Kornelis de Vries, Annika Kurzmann, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin, Wister Wei Huang

Abstract: Electrostatically defined quantum dots in bilayer graphene offer a promising platform for spin qubits with presumably long coherence times due to low spin-orbit coupling and low nuclear spin density. We demonstrate two different experimental approaches to measure the decay times of excited states. The first is based on direct current measurements through the quantum device. Pulse sequences are app… ▽ More Electrostatically defined quantum dots in bilayer graphene offer a promising platform for spin qubits with presumably long coherence times due to low spin-orbit coupling and low nuclear spin density. We demonstrate two different experimental approaches to measure the decay times of excited states. The first is based on direct current measurements through the quantum device. Pulse sequences are applied to control the occupation of ground and excited states. We observe a lower bound for the excited state decay on the order of hundred microseconds. The second approach employs a capacitively coupled charge sensor to study the time dynamics of the excited state using the Elzerman technique. We find that the relaxation time of the excited state is of the order of milliseconds. We perform single-shot readout of our two-level system with a visibility of $87.1\%$, which is an important step for develo** a quantum information processor in graphene. △ Less

Submitted 22 December, 2021; originally announced December 2021.

Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots

Authors: Chuyao Tong, Annika Kurzmann, Rebekka Garreis, Wei Wister Huang, Samuel Jele, Marius Eich, Lev Ginzburg, Christopher Mittag, Kenji Watanabe, Takashi Taniguchi, Klaus Ensslin, Thomas Ihn

Abstract: Pauli blockade mechanisms -- whereby carrier transport through quantum dots is blocked due to selection rules even when energetically allowed -- are a direct manifestation of the Pauli exclusion principle, as well as a key mechanism for manipulating and reading out spin qubits. Pauli spin blockade is well established for systems such as GaAs QDs, but is to be further explored for systems with addi… ▽ More Pauli blockade mechanisms -- whereby carrier transport through quantum dots is blocked due to selection rules even when energetically allowed -- are a direct manifestation of the Pauli exclusion principle, as well as a key mechanism for manipulating and reading out spin qubits. Pauli spin blockade is well established for systems such as GaAs QDs, but is to be further explored for systems with additional degrees of freedom, such as the valley quantum numbers in carbon-based materials or silicon. Here we report experiments on coupled bilayer graphene double quantum dots, in which the spin and valley states are precisely controlled, enabling the observation of the two-electron combined blockade physics. We demonstrate that the doubly occupied single dot switches between two different ground states with gate and magnetic-field tuning, allowing for the switching of selection rules: with a spin-triplet--valley-singlet ground state, valley-blockade is observed; and with the spin-singlet--valley-triplet ground state, robust spin blockade is shown. △ Less

Submitted 10 February, 2022; v1 submitted 8 June, 2021; originally announced June 2021.

Journal ref: Phys. Rev. Lett. 128, 067702 (2022)

A silicon quantum-dot-coupled nuclear spin qubit

Authors: Bas Hensen, Wister Wei Huang, Chih-Hwan Yang, Kok Wai Chan, Jun Yoneda, Tuomo Tanttu, Fay E. Hudson, Arne Laucht, Kohei M. Itoh, Thaddeus D. Ladd, Andrea Morello, Andrew S. Dzurak

Abstract: Single nuclear spins in the solid state have long been envisaged as a platform for quantum computing, due to their long coherence times and excellent controllability. Measurements can be performed via localised electrons, for example those in single atom dopants or crystal defects. However, establishing long-range interactions between multiple dopants or defects is challenging. Conversely, in lith… ▽ More Single nuclear spins in the solid state have long been envisaged as a platform for quantum computing, due to their long coherence times and excellent controllability. Measurements can be performed via localised electrons, for example those in single atom dopants or crystal defects. However, establishing long-range interactions between multiple dopants or defects is challenging. Conversely, in lithographically-defined quantum dots, tuneable interdot electron tunnelling allows direct coupling of electron spin-based qubits in neighbouring dots. Moreover, compatibility with semiconductor fabrication techniques provides a compelling route to scaling to large numbers of qubits. Unfortunately, hyperfine interactions are typically too weak to address single nuclei. Here we show that for electrons in silicon metal-oxide-semiconductor quantum dots the hyperfine interaction is sufficient to initialise, read-out and control single silicon-29 nuclear spins, yielding a combination of the long coherence times of nuclear spins with the flexibility and scalability of quantum dot systems. We demonstrate high-fidelity projective readout and control of the nuclear spin qubit, as well as entanglement between the nuclear and electron spins. Crucially, we find that both the nuclear spin and electron spin retain their coherence while moving the electron between quantum dots, paving the way to long range nuclear-nuclear entanglement via electron shuttling. Our results establish nuclear spins in quantum dots as a powerful new resource for quantum processing. △ Less

Submitted 28 June, 2019; v1 submitted 17 April, 2019; originally announced April 2019.

Journal ref: Nature Nanotechnology 15, 13-17 (2020)

Effects of Mn and Ti do** on superconductivity and charge ordering in NaxCoO2 system

Authors: Y. G. Shi, H. X. Yang, X. Liu, W. J. Ma, C. J. Nie, W. W. Huang, J. Q. Li

Abstract: The superconductivity in Na0.3Co1-xMxO2.1.3H2O and the charge ordering in Na0.5Co1-xMxO2 have been investigated for M = Mn and Ti substituting for Co. We have first successfully synthesized the single-phase Na0.7Co1-xMxO2(M= Mn and Ti) materials with 0 < = x < = 0.1, then we obtained Na0.5Co1-xMxO2 (0 < = x < = 0.1, M = Mn and Ti) by Na deintercalation and Na0.3Co1-xMxO2.1.3H2O (0 < = x < = 0.1,… ▽ More The superconductivity in Na0.3Co1-xMxO2.1.3H2O and the charge ordering in Na0.5Co1-xMxO2 have been investigated for M = Mn and Ti substituting for Co. We have first successfully synthesized the single-phase Na0.7Co1-xMxO2(M= Mn and Ti) materials with 0 < = x < = 0.1, then we obtained Na0.5Co1-xMxO2 (0 < = x < = 0.1, M = Mn and Ti) by Na deintercalation and Na0.3Co1-xMxO2.1.3H2O (0 < = x < = 0.1, M = Mn and Ti) by an additional water intercalations. X-ray diffraction measurements revealed that all samples are single-phase materials, their lattice parameters depend systematically on the Ti and Mn contents. Measurements of physical properties indicate that the superconductivity in Na0.3Co1-xMxO2.1.3H2O is suppressed evidently by Co-site do** and killed at x = 0.02 for Mn do** and x = 0.01 for Ti do**. Charge ordering and magnetic properties in Na0.5Co1-xMxO2 were also influenced by M-atom do**. △ Less

Submitted 3 January, 2005; originally announced January 2005.

Comments: 22 pages, 3 tables, and 6 figures