Si-doped Defect in Monolayer Graphene: Magnetic Quantization
Authors:
P. H. Shih,
T. N. Do,
B. L. Huang,
G. Gumbs,
D. Huang,
M. F. Lin
Abstract:
We explore the rich and unique magnetic quantization of Si-doped graphene defect systems with various concentrations and configurations using the generalized tight-binding model. This model takes into account simultaneously the non-uniform bond lengths, site energies and hop** integrals, and a uniform perpendicular magnetic field (${B_z\hat z}$). The magnetic quantized Landau levels (LLs) are cl…
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We explore the rich and unique magnetic quantization of Si-doped graphene defect systems with various concentrations and configurations using the generalized tight-binding model. This model takes into account simultaneously the non-uniform bond lengths, site energies and hop** integrals, and a uniform perpendicular magnetic field (${B_z\hat z}$). The magnetic quantized Landau levels (LLs) are classified into four different kinds based on the probability distributions and oscillation modes. The main characteristics of LLs are clearly reflected in the magneto-optical selection rules which cover the dominating ${Δ\,n=|n^v-n^c|=0}$, the coexistent ${Δ\,n=0}$ $\&$ ${Δ\,n=1}$, and the specific ${Δ\,n=1}$. These rules for inter-LLs excitations come from the non-equivalence or equivalence of the A$_i$ and B$_i$ sublattices in a supercell.
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Submitted 30 August, 2018;
originally announced August 2018.
