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Highly efficient visible colloidal lead-halide perovskite nanocrystal light-emitting diodes
Authors:
Fei Yan,
Jun Xing,
Guichuan Xing,
Lina Quan,
Swee Tiam Tan,
Jiaxin Zhao,
Rui Su,
Lulu Zhang,
Shi Chen,
Yawen Zhao,
Alfred Huan,
Edward H. Sargent,
Qihua Xiong,
Hilmi Volkan Demir
Abstract:
Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of perovskite light-emitting diodes (PeLEDs) has been growing rapidly. Their application prospects in lighting, however, remain still uncertain due to a variety of shortcomings in device performance including their limited levels of luminous efficiency…
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Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of perovskite light-emitting diodes (PeLEDs) has been growing rapidly. Their application prospects in lighting, however, remain still uncertain due to a variety of shortcomings in device performance including their limited levels of luminous efficiency achievable thus far. Here we show high-efficiency PeLEDs based on colloidal perovskite nanocrystals (PeNCs) synthesized at room temperature possessing dominant first-order excitonic radiation (enabling a photoluminescence quantum yield of 71% in solid film), unlike in the case of bulk perovskites with slow electron-hole bimolecular radiative recombination (a second-order process). In these PeLEDs, by reaching charge balance in the recombination zone, we find that the Auger nonradiative recombination, with its significant role in emission quenching, is effectively suppressed in low driving current density range. In consequence, these devices reach a record high maximum external quantum efficiency of 12.9% reported to date and an unprecedentedly high power efficiency of 30.3 lm W-1 at luminance levels above 1000 cd m-2 as required for various applications. These findings suggest that, with feasible levels of device performance, the PeNCs hold great promise for their use in LED lighting and displays.
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Submitted 31 January, 2018;
originally announced January 2018.
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Ultrafast absorptive and refractive nonlinearities in multi-walled carbon nanotube film
Authors:
H. I. Elim,
W. Ji,
G. H. Ma,
K. Y. Lim,
C. H. Sow,
C. H. A. Huan
Abstract:
By using femtosecond laser pulses at a wavelength range from 720 to 780 nm, we have observed absorptive and refractive nonlinearities in a film of multi-walled carbon nanotubes grown mainly along the direction perpendicular to the surface of quartz substrate. The Z-scans show that both absorptive and refractive nonlinearities are of negative and cubic nature in the laser irradiance range from a…
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By using femtosecond laser pulses at a wavelength range from 720 to 780 nm, we have observed absorptive and refractive nonlinearities in a film of multi-walled carbon nanotubes grown mainly along the direction perpendicular to the surface of quartz substrate. The Z-scans show that both absorptive and refractive nonlinearities are of negative and cubic nature in the laser irradiance range from a few to 300 GW/cm^2. The magnitude of the third-order nonlinear susceptibility,chi-(3), is of an order of 10^-11 esu. The degenerate pump-probe measurement reveals a relaxation time of 2 ps.
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Submitted 11 November, 2003;
originally announced November 2003.
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Trends in bonding configuration at SiC/III-V semiconductor interfaces
Authors:
**-Cheng Zheng,
Hui-Qiong Wang,
A. T. S. Wee,
C. H. A. Huan
Abstract:
The structural and electronic properties of interfaces between beta-SiC and III-V semiconductors are studied by first-principles calculations. Favorable bonding configurations are found to form between Si-V and C-III (model A) for BN, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs and InSb, and Si-III and C-V (model B) for BP, BAs, BSb, AlSb and GaSb. The relationship between formation energy di…
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The structural and electronic properties of interfaces between beta-SiC and III-V semiconductors are studied by first-principles calculations. Favorable bonding configurations are found to form between Si-V and C-III (model A) for BN, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs and InSb, and Si-III and C-V (model B) for BP, BAs, BSb, AlSb and GaSb. The relationship between formation energy difference and lattice constant difference as well as charge distribution for these two models is found. The origin of bonding configurations can be explained in terms of the ionicity of III-V semiconductors, electrostatic effect, charge distribution and band-structure component.
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Submitted 26 March, 2002; v1 submitted 24 March, 2002;
originally announced March 2002.
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Structural and electronic properties of Al nanowires: an ab initio pseudopotential study
Authors:
**-Cheng Zheng,
Hui-Qiong Wang,
A. T. S. Wee,
C. H. A. Huan
Abstract:
The stability and electronic structure of a single monatomic Al wire has been studied using the ab initio pseudopotential method. The Al wire undergoes two structural rearrangements under compression, i.e., zigzag configurations at angles of $140^o$ and $60^o$. The evolution of electronic structures of the Al chain as a function of structural phase transition has been investigated. The relations…
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The stability and electronic structure of a single monatomic Al wire has been studied using the ab initio pseudopotential method. The Al wire undergoes two structural rearrangements under compression, i.e., zigzag configurations at angles of $140^o$ and $60^o$. The evolution of electronic structures of the Al chain as a function of structural phase transition has been investigated. The relationship between electronic structure and geometric stability is also discussed. The 2p bands in the Al nanowire are shown to play a critical role in its stability. The effects of density functionals (GGA and LDA) on cohesive energy and bond length of Al nanostructures (dimmer, chains, and monolayers) are also examined. The link between low dimensional 0D structure (dimmer) to high dimensional 3D bulk Al is estimated. An example of optimized tip-suspended finite atomic chain is presented to bridge the gap between hypothetical infinite chains and experimental finite chains.
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Submitted 5 November, 2002; v1 submitted 20 March, 2002;
originally announced March 2002.
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Possible complete miscibility of $(BN)_x(C_2)_{1-x}$ alloys
Authors:
**-Cheng Zheng,
Hui-Qiong Wang,
A. T. S. Wee,
C. H. A. Huan
Abstract:
The stabilities of $(BN)_x(C_2)_{1-x}$ alloys and related superlattices are investigated by ab initio pseudopotential calculations. We find that the $(BN)_1/(C_2)_1$ superlattices in (111) orientations have the lowest formation energy among many short-range ordered $BNC_2$ structures due to the smallest number of B-C and C-N bonds. Based on the calculated formation energies at several compositio…
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The stabilities of $(BN)_x(C_2)_{1-x}$ alloys and related superlattices are investigated by ab initio pseudopotential calculations. We find that the $(BN)_1/(C_2)_1$ superlattices in (111) orientations have the lowest formation energy among many short-range ordered $BNC_2$ structures due to the smallest number of B-C and C-N bonds. Based on the calculated formation energies at several compositions and for various ordered structures and assuming thermodynamic equilibrium, the solid solution phase diagram of $(BN)_x(C_2)_{1-x}$ alloys is constructed. We find that the complete miscibility of $(BN)_x(C_2)_{1-x}$ alloys is possible, which is in contrast with previous theoretical predictions but in agreement with experimental reports.
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Submitted 5 November, 2002; v1 submitted 20 March, 2002;
originally announced March 2002.
